CN100444350C - Method for preventing tungsten plug corrosion - Google Patents
Method for preventing tungsten plug corrosion Download PDFInfo
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- CN100444350C CN100444350C CNB031002390A CN03100239A CN100444350C CN 100444350 C CN100444350 C CN 100444350C CN B031002390 A CNB031002390 A CN B031002390A CN 03100239 A CN03100239 A CN 03100239A CN 100444350 C CN100444350 C CN 100444350C
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- neutralizer
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- tungsten plug
- lead
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Abstract
The present invention provides a method to prevent wolfram (W) plug from corroding in the manufacturing process of a semiconductor component, wherein firstly, the W plug is formed on a substrate and is coupled with a lead wire formed on the substrate; secondly, a discharger is used to process the substrate so as to remove charges accumulated on the surface of the lead wire in a lead wire etching manufacturing process; finally, a wet-cleaning step is carried out.
Description
Technical field
The invention relates to a kind of semiconductor fabrication process, and particularly relevant for a kind of tungsten plug corroding method that prevents.
Background technology
Along with the lasting microminiaturization of semiconductor element live width, make to reach high speed, multi-functional, high element integrated level, low power consumption cheaply the great scale integrated circuit chip is able to a large amount of manufacturings.Because the microminiaturization of semiconductor element and the increase of integrated level, number of interconnections constantly increases, and makes chip surface can't provide enough surface areas to hold increasing interconnection.In order to solve this problem, the multi-metal interconnection structure just is suggested, and become ic manufacturing technology the mode that must take.
In multi-metal interconnection manufacture craft, after the tungsten connector is finished, then be the making of one deck plain conductor down.When size of component (because interconnection causes) was big, lead can cover the lower floor's tungsten plug that contacts with it fully usually.Therefore, the problem that tungsten plug corrosion is produced only at little shadow stepper aligning that makes a mistake, can be appeared in one's mind during the top that causes the conductor layer of patterning and misalignment tungsten plug just now.Yet when size of component was dwindled, conductor layer can't be aimed at the tungsten plug of its below fully usually.Therefore, the etching problem of tungsten plug and topping wire be still manufacture craft problem deeply concerned.
Figure 1A to Figure 1B illustrates known a kind of metal interconnected manufacture craft profile.Comprise substrate 100, core dielectric material 102, adhesion layer 104, tungsten plug 106, plain conductor 108 and patterning photoresist layer 110 in graphic, wherein the material of adhesion layer 104 comprises titanium nitride, titanizing tungsten or other resistance barrier material.In Figure 1A, the lead 108 of interconnection does not cover the tungsten plug 106 of lower floor fully.The lead 108 of patterning may because wrong the aligning and and misalignment tungsten plug 106 or deliberately only cover a part of tungsten plug 106 in order to save chip area.
Please refer to Figure 1B, utilize oxygen plasma etch step ashing patterning photoresist layer 110, then again to remove solution (Stripping the Solution) (EKC-265 of EKC Technology Inc for example
TM), be to carry out the washing drying manufacture craft under the 10-12 at pH-value pH, to remove residual photoresist and high molecular residue.Because the lead 108 and the misalignment tungsten plug 106 of interconnection, or the lead of interconnection 108 deliberately not exclusively covers tungsten plug 106, and make the some 16 of tungsten plug 106 expose out.Therefore.Carry out the washing drying program to remove solution, during with photoresist on the removal substrate 100 and macromolecule residue, remove solution and can corrode the part that tungsten plug 106 exposes out, and among tungsten plug 106, form a hole 112.Tungsten corrosion, be because patterning with the etching process that forms lead 108 in or in the process with oxygen plasma ashing photoresist layer 110, electric charge ("+") is accumulated in lead 108 surface institutes and causes.Has very big electrochemistry potential energy (ElectrochemicalPotential) (two metal levels with different electrochemistry potential energy can produce electric coupling (GalvanicCouple)) with between the lead 108 of electric charge and the tungsten plug 106, therefore, be that it (for example is WO that the tungsten metal that is exposed will be oxidized to ionic state after the removing solution-treated of 10-12 with the pH value
4 -2), and the tungsten metal of this ionic state washs in follow-up wet type and will be removed in the step, and cause forming in the tungsten plug 106 hole 112.Because tungsten plug 106 corroded, tungsten plug 106 reduces with the contact area of the plain conductor 108 of patterning, and the resistance of lead will increase, and causes ic failure and can't use.
Known solution to the problems described above is soaked in a few hours in neutral solution (for example electrolyte) or the deionized water with substrate, carries out the washing drying program to remove solution again.Substrate is dipped in the neutral solion can effectively removes conductive line surfaces institute charges accumulated; but; though the method can protect tungsten plug to prevent that it from electrochemical corrosion taking place, can make that the lead of the lip-deep interconnection of tungsten plug corrodes (that is the lead metal can react with salt or the electrolyte in the neutral ion solution).And, in the known method, the time of handling substrate with neutral solution (for example electrolyte) or deionized water is not only tediously long, substrate is carried out also must additionally clean after the soaking step-and drying steps remains in solution (being salt/electrolyte) on the substrate with removal.Therefore, propose a kind of can be fast and prevent that effectively the tungsten plug corroding method from being very important.
Summary of the invention
In view of this, the invention provides a kind of tungsten plug corroding method that in semiconductor fabrication process, prevents.The step of the method comprises: the substrate that is formed with a tungsten plug is provided, and tungsten plug couples with the lead that is formed on the substrate.At first, utilize neutralizer to handle substrate,, then carry out known wet type again and remove step to remove electric charge attached to conductive line surfaces.And the time of neutralizer processing substrate is 3 minutes to 6 minutes.
The present invention uses neutralizer (electro-dissociator) to remove the electric charge that is accumulated on the lead, to prevent tungsten plug generation electrochemical corrosion.In case be accumulated in after the electric charge removal on the lead, the electrochemistry potential energy in follow-up wet type removing step between tungsten plug and the lead will significantly reduce, and the tungsten metal oxidation can not take place, and therefore can protect tungsten plug, prevents the phenomenon of corroding.And use neutralizer processing substrate can not corrode the interconnecting lead pattern on the tungsten plug yet, therefore, can prevent that lead from the phenomenon of corrosion taking place yet.
The present invention provides a kind of manufacture method of semiconductor element in addition, and the method provides the substrate that forms tungsten plug, and forms layer of metal layer and one deck patterning photoresist layer in regular turn on substrate.Then, be mask with patterning photoresist layer, etch metal layers is to form lead, and this lead does not cover tungsten plug fully.Then, utilize neutralizer to handle substrate, and remove patterning photoresist layer.And the time of neutralizer processing substrate is 3 minutes to 6 minutes.
The present invention is after etch metal layers, utilize neutralizer to handle substrate, and can remove the electric charge that in the lead etching process, is accumulated on lead and the patterning photoresist laminar surface, therefore in the step of follow-up removal patterning photoresist layer, can avoid the part that tungsten plug exposes out can oxidation and be removed.And use neutralizer processing substrate can not corrode the interconnecting lead pattern on the tungsten plug yet, therefore, can also prevent that lead from the phenomenon of corrosion taking place.
The present invention provides a kind of metal interconnected manufacture method again, and the method provides to be formed with the substrate of tungsten plug.Then, form layer of metal layer and one deck patterning photoresist layer in regular turn on substrate, and be mask with patterning photoresist layer, etch metal layers is with the formation lead, and lead does not cover tungsten plug fully.Then, behind oxygen plasma ashing patterning photoresist layer, utilize neutralizer to handle substrate, to remove attached to the electric charge on the lead.Afterwards, carry out a wet-cleaning step, remove the photoresist and the high molecular residue that residue in this substrate surface.And the time of neutralizer processing substrate is 3 minutes to 6 minutes.
The present invention is after forming lead and utilizing oxygen plasma ashing patterning photoresist layer, utilize neutralizer to handle substrate, and can remove the electric charge that in lead etching process and photoresist layer ashing manufacture craft, is accumulated on the conductive line surfaces, therefore remove in the step in follow-up wet type, can avoid the part that tungsten plug exposes out can oxidation and be removed.And use neutralizer processing substrate can not corrode the interconnecting lead pattern on the tungsten plug yet, therefore, can also prevent that lead from the phenomenon of corrosion taking place.
And the present invention is directly installed neutralizer (electro-dissociator) additional in the wafer load/unload zone of Etaching device or independent nitrogen storage cabinet.After the metal level etching, directly wafer is sent in the wafer load/unload zone or independent nitrogen storage cabinet that is provided with neutralizer, and with neutralizer processing several minutes, just can reach and remove the electric charge that in the lead etching process, accumulates on lead and the patterning photoresist laminar surface, and prevent that tungsten plug from being corroded in follow-up manufacture craft.Therefore, manufacture craft of the present invention can be simplified the fabrication schedule of semiconductor alloy layer and can save the cost of manufacturing.And, because need not change manufacture craft equipment or install expensive manufacture craft equipment additional, thus the time of manufacture craft and the cost of manufacture craft equipment can be reduced, and also can reduce the contaminated possibility of production line.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A to Figure 1B is known a kind of metal interconnected manufacture craft profile; And
Fig. 2 A to Fig. 2 D is a kind of metal interconnected manufacture craft profile of preferred embodiment of the present invention.
Indicate explanation:
100,200: substrate 102,202: inner layer dielectric layer
104,204: adhesion layer 106,206: tungsten plug
108,212: lead 110,210: photoresist layer
112: hole 208: metal level
Embodiment
Fig. 2 A to Fig. 2 D illustrates the manufacturing process profile of a kind of semiconductor element of the embodiment of the invention.
Please refer to Fig. 2 A, a substrate 200 is provided, on this substrate 200, be formed with one deck inner layer dielectric layer 202, in this inner layer dielectric layer 202, be formed with one deck adhesion layer 204 and tungsten plug 206.Certainly, in this substrate 200, also be formed with other element or plain conductor, but for simplicity, be not illustrated in graphic in.Then, on substrate 200, form layer of metal layer 208 and one deck patterning photoresist layer 210 in regular turn.The material of metal level 208 for example is aluminium alloy, copper metal or copper alloy.
Then, please refer to Fig. 2 B, substrate 200 is placed Etaching device, and be mask, remove part metals layer 208 up to exposing inner layer dielectric layer 202 surfaces, to form lead 212 with patterning photoresist layer 210.Etaching device for example is a device for dry etching.Formed lead 212 does not cover the tungsten plug 206 of its lower floor fully in this step, and it for example is the former of manufacture craft technology institute according to present 0.18 micron design criterion (or littler design criterion).And after etch metal layers 208, patterning photoresist layer 210 surface can have negative electrical charge, and lead 212 then has positive charge, and this kind lead 212 charged situations are and cause in follow-up manufacture craft the tungsten plug reason for corrosion.
Then, please refer to Fig. 2 C, substrate 200 is sent to the nitrogen storage cabinet that neutralizer is set from Etaching device.This nitrogen storage cabinet for example is the wafer load/unload zone of Etaching device.Certainly, the nitrogen storage cabinet also can be separated and be provided with separately from Etaching device.Then, in the nitrogen storage cabinet, utilize neutralizer to handle substrate 200, in etching process, be accumulated in lead 212 and patterning photoresist layer 210 lip-deep electric charge to remove with tungsten plug 206, lead 212, patterning photoresist layer 210.Neutralizer for example is an electro-dissociator (Ionizer) etc., and the time that neutralizer is handled substrate 200 for example is about 3～6 minutes.Use the method for neutralizer to compare,, can also avoid the tungsten plug 206 and the surface of lead 212 that the problem of corrosion takes place except can effectively reducing the electric charge that is accumulated on tungsten plug 206 or the lead 212 with known method.
Then, please refer to Fig. 2 D, substrate 200 is sent to the reative cell from nitrogen chamber, utilize oxygen plasma ashing patterning photoresist layer 210 then.Then, again substrate 200 is sent to the decontaminating apparatus from reative cell, substrate 200 with tungsten plug 206 and lead 212 is carried out wet type remove manufacture craft, removing photoresist or the high molecular residue that residues in substrate 200 surfaces, and can obtain metal interconnected.Follow-up to finish semi-conductive manufacture craft known by knowing this skill person, do not repeat them here.
Content according to the foregoing description, the present invention is after etch metal layers, utilize neutralizer to handle substrate, and can remove the electric charge that in etching process, is accumulated on lead and the patterning photoresist laminar surface, therefore in follow-up photoresist wet-cleaned manufacture craft, can avoid the part that tungsten plug exposes out can oxidation and be removed, and can avoid plain conductor to be corroded.
And the present invention is directly installed neutralizer (electro-dissociator) additional in the wafer load/unload zone of Etaching device or independent nitrogen storage cabinet.After the metal level etching, directly wafer is sent in the wafer load/unload zone or independent nitrogen storage cabinet that is provided with neutralizer, and with neutralizer processing several minutes, therefore do not need to install additional in addition other expensive equipment, just can reach and remove the electric charge that in the lead etching process, is accumulated on lead and the patterning photoresist laminar surface, and can save cost.
In addition, in the above-described embodiments, it is that example is done explanation to remove electric treatment after etch metal layers, certainly the present invention also can be after the step of carrying out oxygen plasma ashing photoresist layer, carry out before the step of photoresist wet-cleaned manufacture craft, substrate is removed electric treatment, can prevent the tungsten plug corrosion equally.
Because the present invention only needs to install neutralizer (electro-dissociator) additional in the wafer load/unload zone of Etaching device or independent nitrogen storage cabinet, therefore the present invention does not need expensive equipment need not spend long time yet, only need to use neutralizer to handle substrate number minute, promptly removable plain conductor is in etching time institute charges accumulated.Therefore metal plug when handling with cleaning solution, does not have the situation generation that is corroded follow-up, causes the problem of circuit breaker.
Though the present invention with a preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (25)
1, a kind of tungsten plug corroding method that prevents, it is characterized in that: this method comprises:
A tungsten plug that is formed in the substrate is provided, and the lead on this tungsten plug and this substrate couples;
Utilize a neutralizer to handle this substrate; And
Carry out a wet-cleaning step.
2, the tungsten plug corroding method that prevents as claimed in claim 1, it is characterized in that: this neutralizer is removed the electric charge that accumulates on this conductive line surfaces in fact.
3, the tungsten plug corroding method that prevents as claimed in claim 1, it is characterized in that: this neutralizer comprises electro-dissociator.
4, the tungsten plug corroding method that prevents as claimed in claim 1, it is characterized in that: the time of utilizing this neutralizer to handle this substrate comprises 3～6 minutes.
5, the tungsten plug corroding method that prevents as claimed in claim 1, it is characterized in that: this lead is an aluminium alloy conductor.
6, the tungsten plug corroding method that prevents as claimed in claim 1, it is characterized in that: this lead is copper conductor or copper alloy wire.
7, the tungsten plug corroding method that prevents as claimed in claim 1, it is characterized in that: this neutralizer is arranged at the wafer load/unload zone of Etaching device.
8, the tungsten plug corroding method that prevents as claimed in claim 1, it is characterized in that: this neutralizer is arranged in the nitrogen chamber.
9, a kind of manufacture method of semiconductor element is characterized in that: this method comprises:
One substrate is provided, has been formed with a tungsten plug in this substrate;
On this substrate, form a metal level;
On this metal level, form a patterning photoresist layer;
With this patterning photoresist layer is mask, and this metal level of etching is to form a lead, and this lead does not cover this tungsten plug fully;
Utilize a neutralizer to handle this substrate; And
Remove this patterning photoresist agent layer.
10, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: this neutralizer is removed the electric charge that accumulates on this lead and this patterning photoresist laminar surface in fact.
11, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: this neutralizer comprises electro-dissociator.
12, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: the time of utilizing this neutralizer to handle this substrate comprises 3～6 minutes.
13, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: this lead is an aluminium alloy conductor.
14, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: this lead is copper conductor or copper alloy wire.
15, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: this neutralizer is arranged at the wafer load/unload zone of Etaching device.
16, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: this neutralizer is arranged in the nitrogen storage cabinet.
17, the manufacture method of semiconductor element as claimed in claim 9 is characterized in that: the step that removes this patterning photoresist layer comprises:
With this patterning photoresist layer of oxygen plasma ashing; And
Carry out a wet-cleaning step and remove photoresist and the high molecular residue that residues in this substrate surface.
18, a kind of metal interconnected manufacture method, it is characterized in that: this method comprises:
One substrate is provided, in this substrate to be formed with a tungsten plug;
On this substrate, form a metal level;
On this metal level, form a patterning photoresist layer;
With this patterning photoresist layer is mask, and this metal level of etching is to form a lead, and this lead does not cover this tungsten plug fully;
With this patterning photoresist layer of oxygen plasma ashing;
Utilize a neutralizer to handle this substrate; And
Carry out a wet-cleaning step.
19, metal interconnected manufacture method as claimed in claim 18 is characterized in that: this neutralizer is removed the electric charge that accumulates on this lead and this patterning photoresist laminar surface in fact.
20, metal interconnected manufacture method as claimed in claim 18, it is characterized in that: this neutralizer comprises electro-dissociator.
21, metal interconnected manufacture method as claimed in claim 18, it is characterized in that: the time of utilizing this neutralizer to handle this substrate comprises 3～6 minutes.
22, metal interconnected manufacture method as claimed in claim 18 is characterized in that: this lead is an aluminium alloy conductor.
23, metal interconnected manufacture method as claimed in claim 18 is characterized in that: this lead is copper conductor or copper alloy wire.
24, metal interconnected manufacture method as claimed in claim 18, it is characterized in that: this neutralizer is arranged at the wafer load/unload zone of Etaching device.
25, metal interconnected manufacture method as claimed in claim 18, it is characterized in that: this neutralizer is arranged in the nitrogen storage cabinet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031002390A CN100444350C (en) | 2003-01-06 | 2003-01-06 | Method for preventing tungsten plug corrosion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031002390A CN100444350C (en) | 2003-01-06 | 2003-01-06 | Method for preventing tungsten plug corrosion |
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| Publication Number | Publication Date |
|---|---|
| CN1516262A CN1516262A (en) | 2004-07-28 |
| CN100444350C true CN100444350C (en) | 2008-12-17 |
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ID=34238945
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031002390A Expired - Fee Related CN100444350C (en) | 2003-01-06 | 2003-01-06 | Method for preventing tungsten plug corrosion |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044481A (en) * | 2009-10-19 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing corrosion of tungsten plug |
| CN104253084B (en) * | 2013-06-26 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | Prevent the semiconductor devices of tungsten loss and corresponding manufacture method |
| CN104733376A (en) * | 2013-12-20 | 2015-06-24 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing metal interconnecting structure |
| CN108091630B (en) * | 2016-11-23 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6077788A (en) * | 1989-02-27 | 2000-06-20 | Hitachi, Ltd. | Method and apparatus for processing samples |
| US20010041455A1 (en) * | 1998-03-13 | 2001-11-15 | Yun Cheol-Ju | Method of manufacturing semiconductor device |
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2003
- 2003-01-06 CN CNB031002390A patent/CN100444350C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6077788A (en) * | 1989-02-27 | 2000-06-20 | Hitachi, Ltd. | Method and apparatus for processing samples |
| US20010041455A1 (en) * | 1998-03-13 | 2001-11-15 | Yun Cheol-Ju | Method of manufacturing semiconductor device |
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|---|---|
| CN1516262A (en) | 2004-07-28 |
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Granted publication date: 20081217 Termination date: 20210106 |