SG11202111994PA - Etching compositions - Google Patents

Etching compositions

Info

Publication number
SG11202111994PA
SG11202111994PA SG11202111994PA SG11202111994PA SG11202111994PA SG 11202111994P A SG11202111994P A SG 11202111994PA SG 11202111994P A SG11202111994P A SG 11202111994PA SG 11202111994P A SG11202111994P A SG 11202111994PA SG 11202111994P A SG11202111994P A SG 11202111994PA
Authority
SG
Singapore
Prior art keywords
etching compositions
etching
compositions
Prior art date
Application number
SG11202111994PA
Inventor
Emil A Kneer
Original Assignee
Fujifilm Electronic Materials U S A Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials U S A Inc filed Critical Fujifilm Electronic Materials U S A Inc
Publication of SG11202111994PA publication Critical patent/SG11202111994PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
SG11202111994PA 2019-05-01 2020-04-23 Etching compositions SG11202111994PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962841305P 2019-05-01 2019-05-01
PCT/US2020/029536 WO2020223106A1 (en) 2019-05-01 2020-04-23 Etching compositions

Publications (1)

Publication Number Publication Date
SG11202111994PA true SG11202111994PA (en) 2021-11-29

Family

ID=73017362

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202111994PA SG11202111994PA (en) 2019-05-01 2020-04-23 Etching compositions

Country Status (9)

Country Link
US (1) US11268024B2 (en)
EP (1) EP3963036A4 (en)
JP (1) JP2022530669A (en)
KR (1) KR20220002555A (en)
CN (1) CN114072488A (en)
IL (1) IL287656A (en)
SG (1) SG11202111994PA (en)
TW (1) TW202043438A (en)
WO (1) WO2020223106A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112795923B (en) * 2020-12-24 2023-01-24 江苏和达电子科技有限公司 Copper etching liquid composition and preparation method and application thereof
US11476124B2 (en) * 2021-01-05 2022-10-18 Taiwan Semiconductor Manufacturing Company Ltd. Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
GB9210514D0 (en) * 1992-05-16 1992-07-01 Micro Image Technology Ltd Etching compositions
US7144848B2 (en) 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
US6825156B2 (en) 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
ES2257987T3 (en) 1993-03-18 2006-08-16 Atotech Deutschland Gmbh COMPOSITION AND PROCEDURE TO TREAT A COVERED SURFACE WITH A SELF-LOADING AND SELF-COOLING IMMERSION COATING, WITHOUT FORMALDEHYDE.
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US6717019B2 (en) 2002-01-30 2004-04-06 Air Products And Chemicals, Inc. Glycidyl ether-capped acetylenic diol ethoxylate surfactants
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7419911B2 (en) 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
EP1894230A2 (en) * 2005-06-13 2008-03-05 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
JP5801594B2 (en) 2011-04-18 2015-10-28 富士フイルム株式会社 Cleaning composition, cleaning method using the same, and semiconductor device manufacturing method
JP5692472B1 (en) * 2013-04-12 2015-04-01 三菱瓦斯化学株式会社 Liquid composition used for etching of multilayer film containing copper and titanium, etching method using the composition, manufacturing method of multilayer film wiring, substrate
US20160118264A1 (en) * 2013-05-02 2016-04-28 Fujifilm Corporation Etching method, etching solution used in same, etching solution kit, and method for manufacturing semiconductor substrate product
CN105431506A (en) * 2013-07-31 2016-03-23 高级技术材料公司 Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
US20150104952A1 (en) 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
CN115044375A (en) * 2014-03-18 2022-09-13 富士胶片电子材料美国有限公司 Etching composition
TWI818893B (en) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 Cleaning compositions and methods of use therefor
US10988718B2 (en) * 2016-03-09 2021-04-27 Entegris, Inc. Tungsten post-CMP cleaning composition
KR102363336B1 (en) 2016-05-23 2022-02-15 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. Stripping Composition for Removing Photoresist from a Semiconductor Substrate
KR102160019B1 (en) * 2016-09-29 2020-09-28 후지필름 가부시키가이샤 Treatment liquid and treatment method of laminated body
JP7114842B2 (en) 2016-10-06 2022-08-09 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド Cleaning formulation for removing residue on semiconductor substrates
JP6849564B2 (en) * 2017-09-19 2021-03-24 株式会社フジミインコーポレーテッド Surface treatment composition and surface treatment method using the same
US11499236B2 (en) * 2018-03-16 2022-11-15 Versum Materials Us, Llc Etching solution for tungsten word line recess
US11845917B2 (en) * 2018-12-21 2023-12-19 Entegris, Inc. Compositions and methods for post-CMP cleaning of cobalt substrates

Also Published As

Publication number Publication date
JP2022530669A (en) 2022-06-30
EP3963036A4 (en) 2023-01-11
KR20220002555A (en) 2022-01-06
WO2020223106A1 (en) 2020-11-05
CN114072488A (en) 2022-02-18
TW202043438A (en) 2020-12-01
IL287656A (en) 2021-12-01
US11268024B2 (en) 2022-03-08
EP3963036A1 (en) 2022-03-09
US20200347297A1 (en) 2020-11-05

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