SG11202003348YA - Etching compositions - Google Patents

Etching compositions

Info

Publication number
SG11202003348YA
SG11202003348YA SG11202003348YA SG11202003348YA SG11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA SG 11202003348Y A SG11202003348Y A SG 11202003348YA
Authority
SG
Singapore
Prior art keywords
etching compositions
etching
compositions
Prior art date
Application number
SG11202003348YA
Inventor
Atsushi Mizutani
Original Assignee
Fujifilm Electronic Materials Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials Usa Inc filed Critical Fujifilm Electronic Materials Usa Inc
Publication of SG11202003348YA publication Critical patent/SG11202003348YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
SG11202003348YA 2017-10-19 2018-10-18 Etching compositions SG11202003348YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762574279P 2017-10-19 2017-10-19
PCT/US2018/056439 WO2019079547A1 (en) 2017-10-19 2018-10-18 Etching compositions

Publications (1)

Publication Number Publication Date
SG11202003348YA true SG11202003348YA (en) 2020-05-28

Family

ID=66169758

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202003348YA SG11202003348YA (en) 2017-10-19 2018-10-18 Etching compositions

Country Status (8)

Country Link
US (2) US10889757B2 (en)
EP (1) EP3697866B1 (en)
JP (2) JP2021500748A (en)
KR (1) KR20200073237A (en)
CN (1) CN111225965B (en)
SG (1) SG11202003348YA (en)
TW (1) TWI804519B (en)
WO (1) WO2019079547A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
CN114761878A (en) * 2019-10-17 2022-07-15 弗萨姆材料美国有限责任公司 Etching composition and method for EUV mask protection structure
CN111809182A (en) * 2020-07-08 2020-10-23 江苏和达电子科技有限公司 Etching liquid for copper/molybdenum (niobium)/IGZO film layer and preparation method and application thereof
CN112795923B (en) * 2020-12-24 2023-01-24 江苏和达电子科技有限公司 Copper etching liquid composition and preparation method and application thereof
US20230112795A1 (en) * 2021-10-12 2023-04-13 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2141235C3 (en) 1971-08-17 1980-08-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Etchant for metal-coated silicon semiconductor wafers
JPH07286172A (en) 1994-04-20 1995-10-31 Asahi Glass Co Ltd Etching liquid and etching method
US6630433B2 (en) 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6717019B2 (en) 2002-01-30 2004-04-06 Air Products And Chemicals, Inc. Glycidyl ether-capped acetylenic diol ethoxylate surfactants
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
CN100442449C (en) * 2003-05-02 2008-12-10 Ekc技术公司 Removal of post-etch residues in semiconductor processing
JPWO2005019499A1 (en) * 2003-08-20 2006-10-19 ダイキン工業株式会社 Removal liquid for metal-modified layer and method for removing metal-modified layer
US7960328B2 (en) * 2005-11-09 2011-06-14 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
KR100860367B1 (en) * 2006-08-21 2008-09-25 제일모직주식회사 Wet etching solution having high selectivity for silicon oxide
US20100015807A1 (en) * 2006-12-22 2010-01-21 Techno Semichem Co., Ltd. Chemical Mechanical Polishing Composition for Copper Comprising Zeolite
WO2008157345A2 (en) 2007-06-13 2008-12-24 Advanced Technology Materials, Inc. Wafer reclamation compositions and methods
JP4941335B2 (en) * 2008-01-31 2012-05-30 三菱化学株式会社 Etching solution and etching method
US7790624B2 (en) * 2008-07-16 2010-09-07 Global Foundries Inc. Methods for removing a metal-comprising material from a semiconductor substrate
JP2013533631A (en) * 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Aqueous cleaning agent to remove residues after etching
KR101827031B1 (en) 2010-10-06 2018-02-07 엔테그리스, 아이엔씨. Composition and process for selectively etching metal nitrides
WO2012154498A2 (en) 2011-05-06 2012-11-15 Advanced Technology Materials, Inc. Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
JP5913869B2 (en) * 2011-08-31 2016-04-27 林純薬工業株式会社 Etching solution composition and etching method
JP2014103179A (en) * 2012-11-16 2014-06-05 Fujifilm Corp Etchant for semiconductor substrate, etching method using the same, and method for manufacturing semiconductor element
KR101790090B1 (en) * 2013-05-02 2017-10-25 후지필름 가부시키가이샤 Etching method, etching liquid and etching liquid kit to be used in said method, and semiconductor substrate product manufacturing method
KR102338526B1 (en) * 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
ITMI20131322A1 (en) * 2013-08-02 2015-02-03 Milano Politecnico CO2 REDUCTION PROCESS FOR SYNTHESIS GAS PRODUCTION.
KR102330127B1 (en) 2014-03-18 2021-11-23 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. Etching composition
JP6121959B2 (en) 2014-09-11 2017-04-26 株式会社東芝 Etching method, article and semiconductor device manufacturing method, and etching solution
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
CN105633170A (en) * 2016-02-23 2016-06-01 广州新视界光电科技有限公司 Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Also Published As

Publication number Publication date
US20210087467A1 (en) 2021-03-25
JP2021500748A (en) 2021-01-07
KR20200073237A (en) 2020-06-23
CN111225965B (en) 2021-12-03
EP3697866A1 (en) 2020-08-26
TWI804519B (en) 2023-06-11
EP3697866A4 (en) 2020-11-18
TW201923040A (en) 2019-06-16
US11198816B2 (en) 2021-12-14
WO2019079547A1 (en) 2019-04-25
EP3697866B1 (en) 2023-09-27
US20190119571A1 (en) 2019-04-25
JP2023182750A (en) 2023-12-26
CN111225965A (en) 2020-06-02
US10889757B2 (en) 2021-01-12

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