CN113589662B - Composition, stripping liquid, application of stripping liquid in stripping of photoresist or photoresist residues and stripping method - Google Patents
Composition, stripping liquid, application of stripping liquid in stripping of photoresist or photoresist residues and stripping method Download PDFInfo
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- CN113589662B CN113589662B CN202110873777.9A CN202110873777A CN113589662B CN 113589662 B CN113589662 B CN 113589662B CN 202110873777 A CN202110873777 A CN 202110873777A CN 113589662 B CN113589662 B CN 113589662B
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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Abstract
The invention discloses a composition, a stripping liquid and a stripping agentUse in stripping a photoresist or a photoresist residue and a stripping process, the composition comprising a water-soluble aprotic polar organic solvent, an organic amine compound, a corrosion inhibitor, a glycol ether compound and a wetting agent; the corrosion inhibitor contains at least one of the compounds shown in the formula I and at least one of the compounds shown in the formula II;
R1、R2independently selected from any one of organic electron donating group and H; r1And R2Not H at the same time; r3、R4Independently selected from any one of organic electron withdrawing group and H; r is3And R4Not H at the same time; the organic electron-donating group is selected from phenyl, hydroxyl, amino, methoxy or C1‑5An alkyl group; the organic electron-withdrawing group is selected from acetyl, acetamido, cyano, C1‑3Carboxy, C1‑3Carboxylate groups or nitro groups. The stripping liquid has good protection effect on metal electrodes, particularly Cu, on the basis of effectively removing the photoresist, and can inhibit oxidation and corrosion of the metal electrodes.
Description
Technical Field
The invention relates to a composition used in a semiconductor manufacturing process, stripping liquid with a metal protection function, application of the stripping liquid in stripping of a photoresist or a photoresist residue and a stripping method, and belongs to the technical field of fine chemical engineering.
Background
In the manufacture of semiconductor devices, the content of organic base in the stripping solution is gradually increased in order to increase stripping ability, which causes severe corrosion of the substrate and metal wiring, affecting the yield of products, and copper has poor chemical resistance, so that when the photoresist film is stripped in a cleaning process, it is easily oxidized or corroded by exposure to the photoresist stripping solution. Such oxidation or corrosion of the copper electrode causes an increase in the resistance of the entire wiring, and reduces the advantage as a low-resistance wiring. In order to prevent the above corrosion, methods such as diluting the resist stripping liquid or shortening the exposure time can be sought. However, this method may reduce the photoresist stripping ability of the photoresist stripper to leave a photoresist film, which reduces the reliability of the wiring. Therefore, there is a need for a photoresist stripper composition having excellent stripping ability while inhibiting oxidation and corrosion of copper electrodes.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a photoresist stripping composition having excellent stripping ability, which can effectively remove photoresist, has a good protection effect on metal electrodes, particularly Cu, and can inhibit oxidation and corrosion thereof.
In one aspect, the invention provides a composition comprising: a water-soluble aprotic polar organic solvent, an organic amine compound, a corrosion inhibitor, a glycol ether compound, a wetting agent;
the corrosion inhibitor contains at least one of the compounds shown in the formula I and at least one of the compounds shown in the formula II;
R1、R2independently selected from any one of organic electron donating group and H; r1And R2Not H at the same time;
R3、R4independently selected from any one of organic electron withdrawing group and H; r3And R4Not H at the same time;
the organic electron-donating group is selected from phenyl, hydroxyl, amino, methoxy or C1-5An alkyl group; the organic electron-withdrawing group is selected from acetyl, acetamido, cyano, C1-3Carboxy, C1-3Carboxylate groups or nitro groups.
Preferably, the weight ratio of the compound shown in the formula I to the compound shown in the formula II is 1: 1-10: 1.
Preferably, the compound shown in the formula I is at least one selected from 4-hydroxy-1H-benzotriazole, 5-methylbenzotriazole, 5-ethylbenzotriazole, 5-propylbenzotriazole, 5-butylbenzotriazole, 5, 6-dimethylbenzotriazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 1-aminobenzotriazole, 1-phenylbenzotriazole, 1-hydroxymethyl benzotriazole and 1-methoxy-benzotriazole;
the compound shown in the formula II is at least one selected from 5-carboxyl benzotriazole, 1H-1,2, 3-benzotriazole-5-carbonitrile, 2- (benzotriazole-1-yl) acetamide, 1-methyl-1H-1, 2, 3-benzotriazole-5-ethyl carboxylate, 1-cyano benzotriazole, 1H-benzotriazole-1-acetonitrile, 1H-benzotriazole-7-carboxylic acid, 2- (1-benzotriazole) acetic acid or 5-nitrobenzotriazole.
Preferably, the organic amine compound is preferably a quaternary ammonium hydroxide selected from the group consisting of those having the general formula [ NR5R6R7R8]+At least one of OH, R5、R6、R7、R8Independently selected from C1-4Alkyl radical, C1-4Hydroxyalkyl or benzyl; the quaternary ammonium hydroxide is preferably tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, dimethyldiethylammonium hydroxide, (2-hydroxyethyl) trimethylammonium hydroxide (choline), (2-hydroxyethyl) triethylammonium hydroxide, benzyltrimethylammonium hydroxide, benzyltriethylammonium hydroxide or benzyltributylammonium hydroxide;
the water-soluble aprotic polar organic solvent is selected from dimethyl sulfoxide, dimethyl sulfone, diethyl sulfone, sulfolane, N-dimethylformamide, N-methylformamide, N-dimethylacetamide, N-methylacetamide, N-methylpyrrolidone, N-ethylpyrrolidone, at least one of 1-phenyl-2-pyrrolidone, 1-octyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N-lactam hydroxyethyl-2-pyrrolidone, 1, 3-dimethyl-2-imidazolidinone, β -propiolactone, γ -butyrolactone, γ -valerolactone, δ -caprolactone, γ -octanolide, ethylene carbonate, propylene carbonate, and butylene carbonate;
the glycol ether compound is at least one selected from ethylene glycol methyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-isopropyl ether, ethylene glycol mono-n-butyl ether, diethylene glycol methyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol methyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 1-methoxy-2-propanol, 2-methoxy-1-propanol, 1-ethoxy-2-propanol, 2-ethoxy-1-propanol, propylene glycol mono-n-propyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monobenzyl ether and diethylene glycol monobenzyl ether;
the wetting agent is selected from at least one of alkynol compounds; the alkynol compound is preferably at least one of 2,4,7, 9-tetramethyl-5-decyne-4, 7-diol, 4, 7-dihydroxy-2, 4,7, 9-tetramethyl-5-decyne, 2,4,7, 9-tetramethyl-5-decyne-4, 7-diol polyoxyethylene ether or 2,5,8, 11-tetramethyl-6-dodecyne-5, 8-diol polyoxyethylene ether.
Preferably, the composition comprises the following components in parts by weight:
preferably, the composition further comprises a reducing agent, an alkanolamine;
the alkanolamine is at least one selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, 2- (2-aminoethoxy) ethanol, N-methyl monoethanolamine, N-ethyl monoethanolamine, N-dimethylethanolamine, N-diethylethanolamine, N-dibutylethanolamine, N-dipentylethanolamine, isopropanolamine, 2-amino-1-propanol, 3-amino-1-propanol, 2-amino-1-butanol, isobutanolamine, 2-amino-2-ethoxypropanol, and 2-amino-2-ethoxyethanol;
the reducing agent is selected from at least one of sodium sulfite, ammonium sulfite, sodium thiosulfate, ammonium thiosulfate, carbohydrazide, salicyloyl hydrazine, benzoyl hydrazine, formaldehyde, acetaldehyde, formic acid, oxalic acid, succinic acid, lactic acid, malic acid, citric acid, pyruvic acid, ascorbic acid ester, isoascorbic acid ester, pentose, arabinose, glucose, mannose, fructose and galactose;
the composition comprises the following components in parts by weight:
5-30 parts of alkanolamine;
0.1-5 parts of a reducing agent.
In another aspect, the present invention provides a stripping solution, comprising any one of the above compositions; the stripping liquid comprises the following components in percentage by weight:
the balance of water;
preferably, the stripping solution further comprises, in weight percent:
5-30% of alkanolamine;
0.1 to 5 percent of reducing agent.
In a further aspect, the present invention provides the use of any one of the above compositions or stripping solutions for stripping photoresist or photoresist residue, preferably for semiconductor substrates. The semiconductor substrate of the invention comprises a semiconductor substrate or a semiconductor element.
In another aspect, the present invention provides a method for stripping a photoresist or a photoresist residue, comprising the step of contacting a semiconductor substrate containing the photoresist or the photoresist residue with the stripping solution as described above, wherein the operating temperature of the step is 30 to 85 ℃.
Preferably, the photoresist or photoresist residue has a thickness of 100 to 200 microns.
When a semiconductor substrate or a semiconductor element is cleaned with the stripping liquid of the present invention, a cleaning method is not particularly limited, and for example, dip stripping cleaning, swing stripping cleaning, single wafer stripping cleaning, spin stripping cleaning of a spinner (e.g., a spinner), paddle cleaning, stripping by air or liquid spray, stripping cleaning using ultrasonic waves, and the like are exemplified, but among them, dip stripping cleaning and swing stripping cleaning are suitable. The cleaning temperature is preferably 30 to 85 ℃ from the viewpoints of residue solubility, residue peelability, corrosion resistance of the metal wiring material, safety, and workability. Other cleaning conditions in the cleaning device are not particularly limited. In the rinsing step after cleaning with the resist stripping liquid of the present invention, water rinsing may be performed. Conventional amine-based photoresist stripping liquids, such as ammonium fluoride-based photoresist stripping liquids and hydroxylamines, are solvent-based stripping agents, are difficult to rinse with water, and mixing with water can lead to corrosion of wiring and the like. Generally, a method of washing with a solvent such as isopropyl alcohol has been used. However, since the resist stripping liquid of the present invention is water-based and has high wiring corrosion resistance even when water becomes excessive, rinsing with water is possible, and an economical cleaning method with little environmental load can be obtained. The photoresist is not particularly limited, and a photosensitive resin used in this technical field can be used.
The invention has the advantages that:
(1) the invention adopts a compound corrosion inhibitor, two corrosion inhibitors can not only independently protect metal and a substrate from corrosion, but also generate synergistic action and greatly improve the protection capability, wherein, benzotriazole corrosion inhibitors with electron-donating groups are mainly adsorbed on the surface by providing electrons for the metal, benzotriazole corrosion inhibitors with electron-withdrawing groups are mainly adsorbed on the metal surface by obtaining the electrons provided by the metal surface, and the electron transfer action after the corrosion inhibitors with electron-donating groups and the corrosion inhibitors with electron-withdrawing groups are added together improves the bonding action strength between the corrosion inhibitors with electron-donating groups and the corrosion inhibitors with electron-withdrawing groups and the adsorption of the corrosion inhibitors with electron-donating groups and the corrosion inhibitors with electron-withdrawing groups on the metal surface is more stable.
(2) The addition of the water-soluble aprotic polar organic solvent can effectively swell and soften the photoresist, so that a molecular chain unwrapping resin layer swells, the dissolution of the photoresist is further accelerated, and the organic base can contact the photoresist in a larger range and react with the photoresist to dissolve the photoresist.
(3) The branched groups in the hydrocarbon group of the wetting agent are basically small groups (methyl groups), and two polar groups are arranged in the structure, so that the structural characteristics endow the alkynol with good wettability, the wetting agent is added to improve the permeability of fine gaps, the solvent and organic base molecules are promoted to permeate into a membrane, the swelled photoresist can be dispersed in the photoresist stripping agent, and the photoresist can not be reattached during the cleaning of purified water. The photoresist and the residues thereof on the metal or nonmetal substrate can be cleaned more rapidly in the semiconductor manufacturing process.
(4) In the invention, a certain amount of reducing agent is added to be compounded with other corrosion inhibitors to further improve the corrosion resistance of the base material, particularly copper, and effectively remove copper oxide.
Drawings
FIG. 1 is a microscope photograph of a chip with a photoresist copper electrode, which was not cleaned with the stripping solution prepared in the present invention, after being magnified 200 times.
Fig. 2 is a microscope photograph at 200 times magnification of a chip after washing a copper electrode chip using the stripping solution prepared in example 11.
FIG. 3 is a microscope photograph of a copper electrode chip which has not been soaked with the stripping solution prepared according to the present invention, at a magnification of 500.
Fig. 4 is a microscope photograph of a copper electrode chip subjected to a soaking experiment for 6 hours using the stripping solution prepared in example 11, and then magnified 500 times.
Fig. 5 is a microscope picture after performing a soaking experiment for 6 hours on a copper electrode chip using the stripping solution prepared in comparative example 1 and then magnifying it by 500 times.
Fig. 6 is a microscope picture after performing a soaking experiment for 6 hours on a copper electrode chip using the stripping solution prepared in comparative example 2 and then magnifying it by 500 times.
Fig. 7 is a microscope picture of a copper electrode chip subjected to a soaking experiment for 6 hours using the stripping solution prepared in comparative example 3, and then magnified 500 times.
Fig. 8 is a microscope picture of a copper electrode chip subjected to a soaking experiment for 6 hours using the stripping solution prepared in comparative example 4, and then magnified 500 times.
Fig. 9 is a microscope picture of a copper electrode chip subjected to a soaking experiment for 6 hours using the stripping solution prepared in comparative example 5, and then magnified 500 times.
Detailed Description
The invention is further illustrated by the following examples. In the following examples, the percentages are by mass. The starting materials and reagents used in the present invention are commercially available.
A composition for stripping photoresist from a semiconductor substrate comprises the following components in percentage by weight:
wherein the lower limit of the weight percentage content of the quaternary ammonium hydroxide is selected from 4%, 5%, 6%, 7% and 10%; the upper limit is selected from 12%, 14%, 15%, 20%, 25%; more preferably 10-20%;
the lower limit of the weight percentage of the water-soluble aprotic polar organic solvent is selected from 1%, 5% and 10%; the upper limit is selected from 12.5%, 13%, 15%, 18%, 25%; more preferably 10-15%;
the lower limit of the weight percentage content of the glycol ether compound is selected from 7%, 8% and 10%; the upper limit is selected from 25%, 30%, 35%, 40%, 55%; more preferably 25-50%;
the lower limit of the weight percentage of the corrosion inhibitor is selected from 0.05%, 0.1% and 0.2%; the upper limit is selected from 1%, 1.5%, 2%, 2.5%, 3.5%, 4%; more preferably 0.3 to 3%;
the lower limit of the weight percentage content of the wetting agent is selected from 1%, 1.5%, 2% and 2.5%; the upper limit is selected from 4%, 5%, 10%; more preferably 0.001-5%;
preferably also contains 5-30% of an alkanolamine having a lower weight percent limit selected from the group consisting of 3%, 5%, 8%, 9%, 10%; the upper limit is selected from 12%, 14%, 16%, 20%; more preferably 10-20%;
preferably, the agent also contains 0.1-5% of reducing agent; the lower limit of the weight percentage content of the reducing agent is selected from 0.1%, 0.3%, 0.5% and 0.9%; the upper limit is selected from 2%, 2.5%, 3%, 5%; more preferably 0.3 to 3%;
a preparation method of photoresist stripping liquid comprises the following preparation processes: sequentially adding deionized water, a reducing agent, a water-soluble aprotic polar organic solvent, a glycol ether compound, a wetting agent, a quaternary ammonium hydroxide, an alkanolamine and a corrosion inhibitor into the mixture, stirring and dissolving the mixture, controlling the temperature of a stirring kettle to be below 40 ℃ in the dissolving process, and filtering the stripping solution by using a filter element of 0.1um after preparation.
Example 1
Respectively weighing the following components in percentage by mass based on 100 percent of the total mass percent: 5% of tetramethylammonium hydroxide, 30% of monoethanolamine, 20% of ethylene glycol monomethyl ether, 5% of sodium sulfite, 20% of dimethyl sulfoxide, 3% of 4-hydroxy-1H-benzotriazole, 2% of 5-carboxyl benzotriazole, 0.001% of 2,4,7, 9-tetramethyl-5-decyne-4, 7-diol and 14.999% of deionized water. Deionized water, sodium sulfite, dimethyl sulfoxide, ethylene glycol methyl ether, 2,4,7, 9-tetramethyl-5-decyne-4, 7-diol, tetramethylammonium hydroxide, monoethanolamine, 4-hydroxy-1H-benzotriazole and 5-carboxyl benzotriazole are sequentially added into a stirring kettle, stirred and dissolved to prepare stripping liquid, the temperature of the stirring kettle is controlled below 40 ℃ in the dissolving process, and the stripping liquid is filtered by a filter element of 0.1um after being prepared.
Examples 2 to 22
Table 1 shows the formulations of the stripping solutions of examples 2 to 22, which were prepared by sequentially adding deionized water, a reducing agent, a water-soluble aprotic polar organic solvent, a glycol ether compound, a wetting agent, an organic amine compound, an alkanolamine, and a corrosion inhibitor to a stirred tank, stirring and dissolving the components and the contents thereof listed in table 1, controlling the temperature of the stirred tank below 40 ℃ during the dissolving process, and filtering the stripping solution with a 0.1um filter element after the preparation.
TABLE 1 Photoresist stripper formulations for examples 2-22
Table 2 shows the formula of the photoresist stripping solution of comparative examples 1-5, according to the components and the contents of the components listed in Table 2, deionized water, a reducing agent, a water-soluble aprotic polar organic solvent, a glycol ether compound, a wetting agent, an organic amine compound, alkanolamine and a corrosion inhibitor are sequentially added into a stirring kettle to be stirred and dissolved, the temperature of the stirring kettle is controlled below 40 ℃ in the dissolving process, and the stripping solution is filtered by a filter element of 0.1um after being prepared.
TABLE 2 photoresist stripper formulations for comparative examples 1-5
Performance test of stripping solution for corrosion test of metallic Cu
The stripping solutions of examples 1-22 and comparative examples 1-5 were used to clean blank Cu wafers and the corrosion of metallic Cu was determined. Test methods and conditions: and (2) immersing the Cu wafer into stripping liquid, oscillating for 60 minutes at 30-85 ℃ by using a constant temperature oscillator, washing by using deionized water, drying by using high-purity nitrogen, and measuring the change of surface resistance of the blank Cu wafer before and after etching by using a quadrupole probe instrument to calculate the corrosion rate. The results are shown in Table 3.
TABLE 3 Corrosion of examples 1-22 and comparative examples 1-5 on metallic Cu
FIG. 1 is a microscope photograph of a chip with a photoresist copper electrode, which was not cleaned with the stripping solution prepared in the present invention, after being magnified 200 times. After the present invention is oscillated for 10 to 30 minutes at 30 to 85 ℃ by using the constant temperature oscillator, fig. 2 is a microscope picture of the chip cleaned by using the example 11, which is magnified by 200 times, and it is clear from comparing fig. 1 and fig. 2 that the surface of the chip cleaned by using the example 11 is very clean, there is no any pollutant, and the cleaning effect is very excellent.
Performance test II Corrosion test of stripping solution on metallic Cu
And (3) immersing the copper electrode chip in stripping liquid for 6 hours, and comparing the corrosion condition of the copper electrode after immersing for 6 hours by using a microscope picture.
FIG. 3 is a microscope photograph at 500 times magnification of a copper electrode chip which has not been immersed in the stripping solution prepared in the present invention. Fig. 4 is a microscope photograph of a copper electrode chip subjected to a soaking experiment for 6 hours using example 11 and then magnified 500 times, and it is clear from fig. 4 that the surface of the copper electrode chip is flat and smooth without any corrosion. Fig. 5 is a microscope photograph of a copper electrode chip subjected to a soaking experiment for 6 hours using comparative example 1 and then magnified 500 times, and the copper electrode chip was slightly corroded on the surface. Fig. 6 is a microscope picture after a soaking experiment for 6 hours using comparative example 2 for a copper electrode chip and then a magnification of 500 times, which clearly shows that severe surface corrosion is generated. Fig. 7 is a microscope picture of a copper electrode chip subjected to a soaking experiment for 6 hours using comparative example 3 and then magnified 500 times, which clearly shows that slight surface corrosion is generated. Fig. 8 is a microscope picture after a soaking experiment for 6 hours using comparative example 4 for a copper electrode chip and then a magnification of 500 times, which clearly shows that surface corrosion is generated. Fig. 9 is a microscope picture after performing a soaking experiment for 6 hours using comparative example 5 on a copper electrode chip and then magnifying it by 500 times, which clearly shows that surface corrosion is generated. Comparative examples 2 to 4 are corrosion inhibitors containing no corrosion inhibitor, only corrosion inhibitor with electron donating group and only corrosion inhibitor with electron withdrawing group, examples 1 to 22 are corrosion inhibitors containing corrosion inhibitor with electron donating group and corrosion inhibitor with electron withdrawing group, comparative examples 1 to 22 and comparative examples 2 to 4 show that the corrosion inhibitors with electron donating group and corrosion inhibitors with electron withdrawing group of the invention can protect metal and substrate from corrosion independently and produce synergistic effect, and the protective ability can be greatly improved, wherein benzotriazole corrosion inhibitors with electron donating group are adsorbed on the surface mainly by providing electrons to metal, benzotriazole corrosion inhibitors with electron withdrawing group are adsorbed on the metal surface mainly by obtaining electrons provided by metal surface, and the corrosion inhibitors with electron donating group and corrosion inhibitors with electron withdrawing group are added together for electron transfer action The bonding action strength between the corrosion inhibitor and the metal surface is improved, so that the two corrosion inhibitor molecules are more stably adsorbed on the metal surface. Comparing example 11 with comparative example 5, it can be seen that the protective property of the stripping solution for the Cu electrode can be effectively increased after the reducing agent is added to the stripping solution, since the addition of the reducing agent can prevent the oxidation of Cu and thus the corrosion.
Although the present application has been described with reference to a few embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application as defined by the appended claims.
Claims (13)
1. A composition, comprising: a water-soluble aprotic polar organic solvent, an organic amine compound, a corrosion inhibitor, a glycol ether compound, a wetting agent;
the corrosion inhibitor contains at least one of compounds shown in a formula I and at least one of compounds shown in a formula II;
R1、R2independently selected from any one of organic electron donating group and H; r1And R2Not H at the same time;
R3、R4independently selected from any one of organic electron withdrawing group and H; r3And R4Not H at the same time;
the organic electron-donating group is selected from phenyl, hydroxyl, amino, methoxy or C1-5An alkyl group; the organic electron-withdrawing group is selected from acetyl, acetamido, cyano, C1-3Carboxy, C1-3A carboxylate group or a nitro group;
the composition further comprises a reducing agent;
the reducing agent is at least one selected from sodium sulfite, ammonium sulfite, sodium thiosulfate, ammonium thiosulfate, carbotrap, salicylhydrazide, benzoyl hydrazine, formaldehyde, acetaldehyde, formic acid, oxalic acid, succinic acid, lactic acid, malic acid, citric acid, pyruvic acid, ascorbic acid ester, erythorbic acid ester, pentose, arabinose, glucose, mannose, fructose and galactose.
2. The composition according to claim 1, wherein the weight ratio of the compound represented by the formula I to the compound represented by the formula II is 1: 1-10: 1.
3. The composition of claim 1,
the compound shown in the formula I is selected from at least one of 4-hydroxy-1H-benzotriazole, 5-methylbenzotriazole, 5-ethylbenzotriazole, 5-propylbenzotriazole, 5-butylbenzotriazole, 5, 6-dimethylbenzotriazole, 1-hydroxybenzotriazole, 1-methylbenzotriazole, 1-aminobenzotriazole, 1-phenylbenzotriazole, 1-hydroxymethyl benzotriazole and 1-methoxy-benzotriazole;
the compound shown in the formula II is at least one selected from 5-carboxyl benzotriazole, 1H-1,2, 3-benzotriazole-5-carbonitrile, 2- (benzotriazole-1-yl) acetamide, 1-methyl-1H-1, 2, 3-benzotriazole-5-carboxylic acid ethyl ester, 1-cyano benzotriazole, 1H-benzotriazole-1-acetonitrile, 1H-benzotriazole-7-carboxylic acid, 2- (1-benzotriazole) acetic acid or 5-nitrobenzotriazole.
4. The composition of claim 1, wherein the organic amine compound is a quaternary ammonium hydroxide selected from the group consisting of those having the general formula [ NR [ ]5R6R7R8]+At least one of OH, R5、R6、R7、R8Independently selected from C1-4Alkyl radical, C1-4Hydroxyalkyl or benzyl;
the water-soluble aprotic polar organic solvent is selected from dimethyl sulfoxide, dimethyl sulfone, diethyl sulfone, sulfolane, N-dimethylformamide, N-methylformamide, N-dimethylacetamide, N-methylacetamide, N-methylpyrrolidone, N-ethylpyrrolidone, at least one of 1-phenyl-2-pyrrolidone, 1-octyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N-lactam hydroxyethyl-2-pyrrolidone, 1, 3-dimethyl-2-imidazolidinone, β -propiolactone, γ -butyrolactone, γ -valerolactone, δ -caprolactone, γ -octanolide, ethylene carbonate, propylene carbonate, and butylene carbonate;
the glycol ether compound is at least one selected from ethylene glycol methyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-isopropyl ether, ethylene glycol mono-n-butyl ether, diethylene glycol methyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol methyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 1-methoxy-2-propanol, 2-methoxy-1-propanol, 1-ethoxy-2-propanol, 2-ethoxy-1-propanol, propylene glycol mono-n-propyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monobenzyl ether and diethylene glycol monobenzyl ether;
the wetting agent is selected from at least one of alkynol compounds.
5. The composition of claim 4, wherein the quaternary ammonium hydroxide is tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, dimethyldiethylammonium hydroxide, (2-hydroxyethyl) trimethylammonium hydroxide (choline), (2-hydroxyethyl) triethylammonium hydroxide, benzyltrimethylammonium hydroxide, benzyltriethylammonium hydroxide, or benzyltributylammonium hydroxide.
6. The composition of claim 4, wherein the alkynol compound is at least one of 2,4,7, 9-tetramethyl-5-decyne-4, 7-diol, 4, 7-dihydroxy-2, 4,7, 9-tetramethyl-5-decyne, 2,4,7, 9-tetramethyl-5-decyne-4, 7-diol polyoxyethylene ether, or 2,5,8, 11-tetramethyl-6-dodecene-5, 8-diol polyoxyethylene ether.
7. The composition according to claim 1, wherein the composition comprises, in parts by weight:
8. the composition according to any one of claims 4 to 6, characterized in that it further comprises an alkanolamine;
the alkanolamine is at least one selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, 2- (2-aminoethoxy) ethanol, N-methyl monoethanolamine, N-ethyl monoethanolamine, N-dimethylethanolamine, N-diethylethanolamine, N-dibutylethanolamine, N-dipentylethanolamine, isopropanolamine, 2-amino-1-propanol, 3-amino-1-propanol, 2-amino-1-butanol, isobutanolamine, 2-amino-2-ethoxypropanol, and 2-amino-2-ethoxyethanol;
the composition comprises the following components in parts by weight:
5-30 parts of alkanolamine;
0.1-5 parts of a reducing agent.
9. A stripping solution comprising the composition according to any one of claims 1 to 7; the stripping liquid comprises the following components in percentage by weight:
10. the stripping solution according to claim 9, further comprising, in weight percent:
5-30% of alkanolamine;
0.1 to 5 percent of reducing agent.
11. Use of a composition according to any one of claims 1 to 8 or a stripping solution according to claim 9 or 10 for stripping a photoresist or a photoresist residue for a semiconductor substrate.
12. A method for stripping a photoresist or a photoresist residue, comprising the step of contacting a semiconductor substrate containing the photoresist or the photoresist residue with the stripping solution according to claim 9 or 10, wherein the process is carried out at an operating temperature of 30 to 85 ℃.
13. The method of claim 12, wherein the photoresist or photoresist residue has a thickness of 100 microns to 200 microns.
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| CN115469516B (en) * | 2022-11-03 | 2023-03-24 | 江苏奥首材料科技有限公司 | Stripping agent for III-V semiconductor compound photoresist, preparation method and application thereof |
| CN115421361B (en) * | 2022-11-03 | 2023-03-24 | 江苏奥首材料科技有限公司 | Stripping agent for semiconductor compound photoresist, preparation method and application thereof |
| CN117872693B (en) * | 2024-03-13 | 2024-07-12 | 深圳市松柏科工股份有限公司 | Positive photoresist stripping solution, preparation method and application thereof |
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| CN1650235A (en) * | 2002-04-26 | 2005-08-03 | 东京应化工业株式会社 | Method for removing photoresist |
| CN1916772A (en) * | 2005-07-28 | 2007-02-21 | 罗门哈斯电子材料有限公司 | Stripper |
| CN102346383A (en) * | 2010-08-06 | 2012-02-08 | 安集微电子（上海）有限公司 | Photoresist cleaning solution |
| CN103293882A (en) * | 2012-02-23 | 2013-09-11 | 安集微电子（上海）有限公司 | Photoresist cleanout fluid |
| CN107085358A (en) * | 2017-06-23 | 2017-08-22 | 昆山欣谷微电子材料有限公司 | For removing the photoresist lift off liquid containing back chip metalization layer |
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| SG10201907142VA (en) * | 2014-03-18 | 2019-09-27 | Fujifilm Electronic Materials Usa Inc | Etching composition |
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| CN1650235A (en) * | 2002-04-26 | 2005-08-03 | 东京应化工业株式会社 | Method for removing photoresist |
| CN1916772A (en) * | 2005-07-28 | 2007-02-21 | 罗门哈斯电子材料有限公司 | Stripper |
| CN102346383A (en) * | 2010-08-06 | 2012-02-08 | 安集微电子（上海）有限公司 | Photoresist cleaning solution |
| CN103293882A (en) * | 2012-02-23 | 2013-09-11 | 安集微电子（上海）有限公司 | Photoresist cleanout fluid |
| CN107085358A (en) * | 2017-06-23 | 2017-08-22 | 昆山欣谷微电子材料有限公司 | For removing the photoresist lift off liquid containing back chip metalization layer |
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