WO2014089908A1 - Cleaning solution for removing photoresist - Google Patents

Cleaning solution for removing photoresist Download PDF

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Publication number
WO2014089908A1
WO2014089908A1 PCT/CN2013/001500 CN2013001500W WO2014089908A1 WO 2014089908 A1 WO2014089908 A1 WO 2014089908A1 CN 2013001500 W CN2013001500 W CN 2013001500W WO 2014089908 A1 WO2014089908 A1 WO 2014089908A1
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WO
WIPO (PCT)
Prior art keywords
cleaning solution
cleaning
ether
hydroxide
photoresist
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PCT/CN2013/001500
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French (fr)
Chinese (zh)
Inventor
孙广胜
刘兵
彭洪修
颜金荔
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安集微电子科技(上海)有限公司
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Publication of WO2014089908A1 publication Critical patent/WO2014089908A1/en

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a cleaning fluid for removing photoresist. Background technique
  • a photoresist is required to form a mask, which needs to be removed after the microsphere is successfully implanted, but since the photoresist is thick, it is completely removed. More difficult.
  • a more common method for improving the removal is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.
  • the photoresist cleaning liquid is mainly composed of a polar organic solvent, a strong alkali, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning liquid or rinsing the semiconductor wafer with the cleaning liquid.
  • WO2006/056298A1 utilizes an alkaline cleaning solution consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), ethylene glycol (EG) and water for cleaning the copper substrate photoresist, Basically non-corrosive to metallic copper, but it is corrosive to metallic aluminum; for example, US5529887 consists of potassium hydroxide (K0H), alkyl glycol monoalkyl ether, water-soluble fluoride and water, etc. Immersion in the cleaning solution removes the thick film photoresist on the metal and dielectric substrates at 40-90 °C. It has a high corrosion to the semiconductor wafer substrate.
  • TMAH tetramethylammonium hydroxide
  • DMSO dimethyl sulfoxide
  • EG ethylene glycol
  • water water for cleaning the copper substrate photoresist
  • the present invention provides a photoresist cleaning apparatus which is capable of cleaning a thick film photoresist and having low corrosion resistance to a semiconductor wafer pattern and a substrate.
  • the technical problem that can be solved by the cleaning solution is that the existing thick film photopolymer iJ cleaning solution has insufficient cleaning ability or is highly corrosive to the semiconductor wafer pattern and substrate.
  • the technical solution adopted by the present invention to solve the above technical problems is to provide a cleaning liquid for photoresist cleaning, which comprises a quaternary ammonium hydroxide, an alcohol amine, a C 4 -C 6 polyol, a solvent.
  • the quaternary ammonium hydroxide includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltriethylammonium hydroxide and hydroxyethyltrimethylhydrogen.
  • ammonium oxide and the like One or more of ammonium oxide and the like.
  • the alkanolamine is one or more of monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine.
  • the presence of an alcoholamine contributes to the improvement of the solubility of the quarter hinge hydroxide.
  • the 0 4 -0 6 polyol is selected from the group consisting of threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactose, tagatose, allose, azhuo Sugar, idose, tarotose, sorbose, psicose, fructose, threitol, erythritol, ribitol, arabitol, xylitol, talitol, sorbitol, mannitol, One or more of iditol and galactitol.
  • the solvent may be selected from one or more of sulfoxide, sulfone, imidazolium, imidazolidinone, pyrrolidone, alcohol ether, amide.
  • the sulfoxide is preferably dimethyl sulfoxide; the sulfone is preferably sulfolane; and the imidazolidinone is preferably 1,3-dimethyl-2-imidazolium
  • the imidazolinone is preferably 1, 3-dimethyl-2-imidazolidinone;
  • the pyrrolidone is preferably N-methylpyrrolidone, N-ethylpyrrolidone, N-hydroxyl Ethylpyrrolidone and N-cyclohexylpyrrolidone;
  • the amide is preferably dimethylformamide or dimethylacetamide; and the alcohol ether is preferably a glycol ether and a propylene glycol ether;
  • the glycol ether is preferably diethylene glycol mono
  • the content of the quaternary ammonium compound is 0.1 - 10% by weight (mass ['1 ratio", the content of the alcohol amine is 0.1-30% by weight, and the content of the 0 4 - ⁇ 6 polyol is 0.1 - 10% by weight, the solvent content It is 45-95 wt%.
  • the above cleaning liquid may further contain water.
  • the presence of water facilitates the removal of the acrylic resin.
  • the content is 0.1 - 10 wt%.
  • the low etch photoresist cleaning liquid of the present invention can clean the photoresist at 25 ° C to 9 CTC.
  • the specific method is as follows: The photoresist containing wafer is immersed in the low-etching photoresist cleaning agent of the present invention, and after immersing at 25 ° C to 90 for a suitable period of time, it is taken out and washed, and then dried by high-purity nitrogen gas.
  • the technical effect of the invention is that the cleaning liquid of the invention has strong photoresist removal ability; strong corrosion inhibition ability to metal and non-metal; and large operation window.
  • the polishing liquid was prepared in accordance with the compositions of the respective examples in Tables 1 and 2 and the comparative examples, and the ratio thereof was uniformly mixed.
  • Table 1 Formulations of Examples 1-27 of the present invention are examples of the present invention.
  • Name Contains Name
  • Name Contains M
  • Name Contains t Hydroxyethyl Di 2- (2B
  • N-methylpyridylmethylhydrogen oxide 2 3.5 diethanolamine 8 Tagatose 5 81.5 Rotoridone
  • the present invention adopts the following technical means: immersing the wafer containing the photoresist in the cleaning agent, and using a constant temperature oscillator at a vibration frequency of about 60 rpm at 25 90 ° C It was shaken for 5 minutes for 60 minutes, then washed with deionized water and then dried with high purity nitrogen.
  • the cleaning effect of the photoresist and the corrosion of the cleaning solution on the wafer are shown in Table 3.
  • Example 1 25 55 ⁇ ⁇ ⁇ Example 3 85 15 ⁇ ⁇ ⁇ Example 4 75 20 ⁇ ⁇ ⁇ Comparative Example 4 75 20 ⁇ O ⁇ Example 6 50 45 ⁇ ⁇ ⁇ Example 7 30 50 ⁇ ⁇ ⁇ Implementation Example 9 60 35 ⁇ ⁇ ⁇ 3 ⁇ 4Example 10 65 2 ⁇ ⁇ ⁇ Comparative Example 10 65 25 OXO
  • Example 12 90 10 ⁇ ⁇ ⁇ Example 14 35 60 ⁇ ⁇ ⁇ Example 16 70 30 ⁇ ⁇
  • the cleaning liquid of the present invention has a good cleaning effect on the photoresist and has a wide temperature range. Further, in comparison with the comparative examples, it can be seen that the specific quaternary ammonium hydroxide, the alcohol amine, the solvent and the water of the present invention have a synergistic effect, and the cleaning liquid disclosed in the present invention has a comparison with the metal and the non-metal substrate. Good corrosion inhibition, strong photoresist removal ability.
  • the cleaning liquid of the present invention has strong photoresist removal ability; strong corrosion inhibition ability to metal and non-metal; and large operation window.
  • wt% of the present invention refers to the mass percentage.

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  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

Disclosed are a cleaning solution with low etching ability suitable for cleaning a relatively thick photoresist and a cleaning method using same. This photoresist cleaning solution with low etching ability contains a quaternary ammonium hydroxide, an alcohol amine, a C4-C6 polyol and a solvent. This photoresist cleaning agent with low etching ability can effectively remove the photoresist on a semiconductor wafer, at the same time fundamentally will not attack a substrate, of metals such as aluminum, copper, etc., and has good application prospects in the field of semiconductor wafer cleaning etc.

Description

一种去除光刻胶的清洗液  A cleaning solution for removing photoresist
技术领域  Technical field
本发明涉及一种去除光刻胶的清洗液。 背景技术  The present invention relates to a cleaning fluid for removing photoresist. Background technique
在通常的半导体制造工艺中， 通过在一些材料的表面上形成光刻胶的掩 膜， 曝光后进行图形转移， 在得到需要的图形之后， 进行下一道工序之前， 需要剥去残留的光刻胶。 在这个过程中要求完全除去不需要的光刻胶， 同时 不能腐蚀任何基材。例如， 在晶圆微球植入工艺（bumping technology)中， 需要光刻胶形成掩膜， 该掩膜在微球成功植入后同样需要去除， 但由于该光 刻胶较厚， 完全去除常较为困难。 改善去除效果较为常用的方法是采用延长 浸泡时间、 提高浸泡温度和采用更富有攻击性的溶液， 但这常会造成晶片基 材的腐蚀和微球的腐蚀， 从而导致晶片良率的显著降低。  In a typical semiconductor manufacturing process, by forming a mask of photoresist on the surface of some materials, pattern transfer after exposure, after obtaining the desired pattern, it is necessary to remove the residual photoresist before proceeding to the next process. . In this process it is required to completely remove the unnecessary photoresist while not corroding any substrate. For example, in the wafer microsphere implantation technology, a photoresist is required to form a mask, which needs to be removed after the microsphere is successfully implanted, but since the photoresist is thick, it is completely removed. More difficult. A more common method for improving the removal is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.
目前， 光刻胶清洗液主要由极性有机溶剂、 强碱和 /或水等组成， 通过将 半导体晶片浸入清洗液中或者利用清洗液冲洗半导体晶片， 去除半导体晶片 上的光刻胶。 如 WO2006/056298A1利用由四甲基氢氧化铵（TMAH ) 、 二 甲基亚砜 （DMSO ) ， 乙二醇 （EG ) 和水组成碱性清洗液， 用于清洗铜基 板的光刻胶， 同时对金属铜基本无腐蚀， 但其对金属铝有腐蚀； 又例如 US5529887由氢氧化钾 （K0H ) 、 烷基二醇单烷基醚、 水溶性氟化物和水 等组成碱性清洗液， 将晶片浸入该清洗液中， 在 40~90°C下除去金属和电介 质基材上的厚膜光刻胶。 其对半导体晶片基材的腐蚀较高。  At present, the photoresist cleaning liquid is mainly composed of a polar organic solvent, a strong alkali, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning liquid or rinsing the semiconductor wafer with the cleaning liquid. For example, WO2006/056298A1 utilizes an alkaline cleaning solution consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), ethylene glycol (EG) and water for cleaning the copper substrate photoresist, Basically non-corrosive to metallic copper, but it is corrosive to metallic aluminum; for example, US5529887 consists of potassium hydroxide (K0H), alkyl glycol monoalkyl ether, water-soluble fluoride and water, etc. Immersion in the cleaning solution removes the thick film photoresist on the metal and dielectric substrates at 40-90 °C. It has a high corrosion to the semiconductor wafer substrate.
由此可见， 寻找更为有效抑制金属腐蚀抑制方法和高效的光刻胶去除能 力是该类光刻胶清洗液努力改进的优先方向。 发明内容 It can be seen that finding a more effective method for suppressing metal corrosion suppression and high efficiency of photoresist removal is a priority for the improvement of such photoresist cleaning solutions. Summary of the invention
为了解决上述技术 题， 本发明提供了一种可以对厚膜光刻胶淸洗能力 强且对半导体晶片图案和基材腐蚀性较低的光刻胶清冼齐 IJ。 该清洗液可以解 决的技术问题就是现有的厚膜光亥 iJ胶清洗液存在的清洗能力不足或者对半 导体晶片图案和基材腐蚀性较强的缺陷。  In order to solve the above problems, the present invention provides a photoresist cleaning apparatus which is capable of cleaning a thick film photoresist and having low corrosion resistance to a semiconductor wafer pattern and a substrate. The technical problem that can be solved by the cleaning solution is that the existing thick film photopolymer iJ cleaning solution has insufficient cleaning ability or is highly corrosive to the semiconductor wafer pattern and substrate.
本发明解决上述技术问题所采用的技术方案是提供一种用于光刻胶清 洗的清洗液， 该清洗液包含季铵氢氧化物， 醇胺， C4-C6多元醇， 溶剂。 The technical solution adopted by the present invention to solve the above technical problems is to provide a cleaning liquid for photoresist cleaning, which comprises a quaternary ammonium hydroxide, an alcohol amine, a C 4 -C 6 polyol, a solvent.
其中， 季铵氢氧化物包括四甲基氢氧化铵、 四乙基氢氧化铵、 四丙基氢 氧化铵、 四丁基氢氧化铵、 甲基三乙基氢氧化铵和羟乙基三甲基氢氧化铵等 中的一种或者几种。  Among them, the quaternary ammonium hydroxide includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltriethylammonium hydroxide and hydroxyethyltrimethylhydrogen. One or more of ammonium oxide and the like.
其中， 醇胺为单乙醇胺、 二乙醇胺、 三乙醇胺、 正丙醇胺、 异丙醇胺、 2- (二乙氨基） 乙醇、 乙基二乙醇胺和二甘醇胺中的一种或几种。 醇胺的存 在有利于提高季铰氢氧化物的溶解度。  Among them, the alkanolamine is one or more of monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine. The presence of an alcoholamine contributes to the improvement of the solubility of the quarter hinge hydroxide.
其中， 04-06多元醇为选自苏阿糖、 阿拉伯糖、 木糖、 核糖、 核酮糖、 木酮糖、 葡萄糖、 甘露糖、 半乳糖、 塔格糖、 阿洛糖、 阿卓糖、 艾杜糖、 塔 罗糖、 山梨糖、 阿洛酮糖、 果糖、 苏糖醇、 赤藓醇、 核糖醇、 阿拉伯糖醇、 木糖醇、 塔罗糖醇、 山梨醇、 甘露醇、 艾杜糖醇和半乳糖醇中的一种或者几 种。 Wherein, the 0 4 -0 6 polyol is selected from the group consisting of threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactose, tagatose, allose, azhuo Sugar, idose, tarotose, sorbose, psicose, fructose, threitol, erythritol, ribitol, arabitol, xylitol, talitol, sorbitol, mannitol, One or more of iditol and galactitol.
其中， 溶剂可选自亚砜、 砜、 咪唑垸酮、 咪唑啉酮、 吡咯烷酮、 醇醚、 酰胺中的一种或多种。 其中， 所述的亚砜较佳的为二甲基亚砜； 所述的砜较 佳的为环丁砜； 所述的咪唑烷酮较佳的为 1 ,3-二甲基 -2-咪唑垸酮； 所述的咪 唑啉酮较佳的为 1 ,3-二甲基 -2-咪唑啉酮； 所述的吡咯烷酮较佳的为 N-甲基 吡咯垸酮、 N-乙基吡咯烷酮、 N-羟乙基吡咯垸酮和 N-环己基吡咯烷酮； 所 述的酰胺较佳的为二甲基甲酰胺、 二甲基乙酰胺； 所述的醇醚较佳的为乙二 醇醚和丙二醇醚； 所述的乙二醇醚较佳的为二乙二醇单甲醚、 二乙二醇单乙 醚、 二乙二醇单丁醚； 所述的丙二醇醚较佳的为二丙二醇单甲醚、 二丙二醇 单乙醚。 Wherein, the solvent may be selected from one or more of sulfoxide, sulfone, imidazolium, imidazolidinone, pyrrolidone, alcohol ether, amide. Wherein, the sulfoxide is preferably dimethyl sulfoxide; the sulfone is preferably sulfolane; and the imidazolidinone is preferably 1,3-dimethyl-2-imidazolium The imidazolinone is preferably 1, 3-dimethyl-2-imidazolidinone; the pyrrolidone is preferably N-methylpyrrolidone, N-ethylpyrrolidone, N-hydroxyl Ethylpyrrolidone and N-cyclohexylpyrrolidone; the amide is preferably dimethylformamide or dimethylacetamide; and the alcohol ether is preferably a glycol ether and a propylene glycol ether; The glycol ether is preferably diethylene glycol monomethyl ether, diethylene glycol monoethyl ether or diethylene glycol monobutyl ether; the propylene glycol ether is preferably dipropylene glycol monomethyl ether or dipropylene glycol. Monoethyl ether.
其中， 季铵 ¾化物的含量为 0.1 -10wt% (质量 ['1分比)， 醇胺的含量为 0.1 -30wt%, 04-〇6多元醇的含量为 0.1 -10wt%， 溶剂的含量为 45-95 wt%。 Wherein, the content of the quaternary ammonium compound is 0.1 - 10% by weight (mass ['1 ratio", the content of the alcohol amine is 0.1-30% by weight, and the content of the 0 4 -〇 6 polyol is 0.1 - 10% by weight, the solvent content It is 45-95 wt%.
上述清洗液还可进一步含有水。水的存在有利于丙烯酸树脂类光刻胶去 除。 含量为 0.1 -10 wt%。  The above cleaning liquid may further contain water. The presence of water facilitates the removal of the acrylic resin. The content is 0.1 - 10 wt%.
本发明中的低蚀刻性光刻胶清洗液，可以在 25°C至 9CTC下清洗光刻胶。 具体方法如下： 将含有光刻胶的晶片浸入本发明屮的低蚀刻性的光刻胶清洗 剂， 在 25°C至 90 下浸泡合适的时间后， 取出洗涤后用高纯氮气吹干。  The low etch photoresist cleaning liquid of the present invention can clean the photoresist at 25 ° C to 9 CTC. The specific method is as follows: The photoresist containing wafer is immersed in the low-etching photoresist cleaning agent of the present invention, and after immersing at 25 ° C to 90 for a suitable period of time, it is taken out and washed, and then dried by high-purity nitrogen gas.
本发明所具有的技术效果在于：本发明的清洗液具有光刻胶去除能力强； 对 金属和非金属的腐蚀抑制能力强； 具有较大的操作窗口。 具体实施方式 The technical effect of the invention is that the cleaning liquid of the invention has strong photoresist removal ability; strong corrosion inhibition ability to metal and non-metal; and large operation window. detailed description
下面通过具体实施例进一步阐述本发明的优点， 但本发明的保护范围不 仅仅局限于下述实施例。  The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following embodiments.
按照表 1 和表 2 中各实施例以及对比实施例的成分及其比例配制抛光 液， 混合均匀。 表 1 本发明实施例 1-27的配方  The polishing liquid was prepared in accordance with the compositions of the respective examples in Tables 1 and 2 and the comparative examples, and the ratio thereof was uniformly mixed. Table 1 Formulations of Examples 1-27 of the present invention
季铵氢氧化物 ±离于水 醇胺 C4-C6多元醇 溶剂 实施例 Quaternary ammonium hydroxide ± from hydroalcoholamine C 4 -C 6 polyol solvent example
名称 含 名称 名称 含 M 名称 含 t 羟乙基二 2- (二乙  Name Contains Name Name Contains M Name Contains t Hydroxyethyl Di 2- (2B
二甲基乙 Dimethyl b
1 甲基氢氧 1 0.5 氨基） 乙 0.1 苏阿糖 0.2 98.2 酰胺 化铵 醇 1 methyl hydrogen oxide 1 0.5 amino group B 0.1 threose 0.2 98.2 ammonium amidate alcohol
甲基二乙 1 ,3-二甲 Methyldiethyl 1, 3-dimethyl
2 基氢氧化 2.5 1 异丙醇胺 3 阿拉伯糖 1 基 -2-咪 92.5 铵 唑啉酮 四丁基氢 2 base hydrogen hydroxide 2.5 1 isopropanolamine 3 arabinose 1 base -2-mi 92.5 ammonium oxazolinone tetrabutyl hydrogen
3 3 2 二乙醇胺 2.5 木糖 0.5 环丁砜 92 氧化铰  3 3 2 Diethanolamine 2.5 Xylose 0.5 Sulfolane 92 Oxidized hinge
1 '3-二甲 四甲基氢  1 '3-dimethyltetramethyl hydrogen
4 2 1.5 二甘醇胺 1.5 核糖 2 基 -2-咪 93 氧化铵  4 2 1.5 Diethylene glycolamine 1.5 Ribose 2 base -2-Mim 93 Ammonium oxide
唑垸酮 乙— ：乙 f Azolidinone B - : B
4 4 4 画； 4 84 ¼化铵 中 -乙醚 四 w ½¾ ： U  4 4 4 painting; 4 84 1⁄4 ammonium chloride - diethyl ether four w 1⁄23⁄4 : U
4.5 6.5 ιΈ囊胺 5.5 水«糖 j 80.5 氧化铵 单鴨 四甲基氢 一 i '  4.5 6.5 Έ Έ 5.5 5.5 5.5 water « sugar j 80.5 ammonium oxide single duck tetramethyl hydrogen one i '
6 8 二乙醇胺 10 ¾¾糖 5 71 氧化 ί¾ ^乙醚 四乙基 ¾ ―二甲 S甲  6 8 Diethanolamine 10 3⁄43⁄4 sugar 5 71 Oxidation ί3⁄4 ^Ethyl ether Tetraethyl 3⁄4 ―Dimethyl S
2.5 4 二卄醇胺 2.5 汁^糖 8 83 氧化铵 酉 t胺 四丙基氢 乙¾二乙 二甲基亚  2.5 4 dimethyl alcohol amine 2.5 juice sugar 8 83 ammonium oxide 酉 t amine tetrapropyl hydrogen ethyl 3⁄4 diethylene dimethyl
0.1 0.1 0.8 十 -乳糖 10 89 氧化铵 醇胺 S<1  0.1 0.1 0.8 ten-lactose 10 89 ammonium oxide alcohol amine S<1
¾乙基二  3⁄4 ethyl two
N-甲基吡 甲基氢氧 2 3.5 二乙醇胺 8 塔格糖 5 81.5 咯烷酮 化铰  N-methylpyridylmethylhydrogen oxide 2 3.5 diethanolamine 8 Tagatose 5 81.5 Rotoridone
甲基二乙 Methyl diacetate
N-羟乙基 基氢氧化 6.5 8 单乙醇胺 10 Ρ。ί洛糖 2.5 73 吡咯烷酮 铵  N-Hydroxyethyl Hydroxide 6.5 8 Monoethanolamine 10 Ρ. ί洛糖 2.5 73 pyrrolidone ammonium
四厂基氢 二甲基亚 Fourth plant hydrogen dimethyl
3.5 4.5 单乙醇胺 7 卓糖 3 82 氧化铰 讽 四丁基氢 一丙二醇  3.5 4.5 Monoethanolamine 7 Zhuo sugar 3 82 Oxidized hinge Iron tetrabutyl hydrogen 1-propylene glycol
1 2.5 异丙醇胺 0.5 艾杜糖 1.5 94.5 氧化铰 单甲醚 羟乙基二 2- (二乙  1 2.5 Isopropanolamine 0.5 Idose 1.5 94.5 Oxidized hinge Monomethyl ether Hydroxyethyl di 2- (2-B
甲基氢氧 10 10 氨基） 乙 25 塔罗糖 7 环丁砜 48 化铰 1? Methyl hydroxy 10 10 amino group B 25 talose 7 sulfolane 48 hinge 1?
四乙基氢 —甲基亚 Tetraethyl hydrogen-methyl
4.5 7 正丙醇胺 14 山¾糖 4.5 70 氧化铰 砜 四丙基氢 N-甲基吡  4.5 7 n-propanolamine 14 mountain 3⁄4 sugar 4.5 70 oxidized hinge sulfone tetrapropyl hydrogen N-methylpyridinium
2.5 3 二乙醇胺 6.5 阿洛酮糖 3 85 氧化铵 咯烷酮 四丁基氢 N-乙基吡  2.5 3 Diethanolamine 6.5 Lolotone 3 85 Ammonium Oxide Pyrrolidone Tetrabutyl Hydrogen N-Ethylpyr
5 3.5 单乙醇胺 20 果糖 0.1 71.4 氧化铰 咯烷酮 四甲基氢 N-环己基  5 3.5 Monoethanolamine 20 Fructose 0.1 71.4 Oxidized hinged alkaloid Tetramethylhydrogen N-cyclohexyl
4 4 异丙醇胺 5 苏糖醇 0.8 86.2 氧化铰 吡咯垸酮 四丙基氢 2 —二乙二醇  4 4 isopropanolamine 5 threitol 0.8 86.2 oxidation hinge pyrrolidone tetrapropyl hydrogen 2 - diethylene glycol
2 二乙醇胺 2.5 赤藓醇 3 90.5 氧化铵 单甲醚 四丁基氢 乙基二乙 二乙二醇  2 Diethanolamine 2.5 Erythritol 3 90.5 Ammonium Oxide Monomethyl Ether Tetrabutyl Hydrogen Ethyl Diethylene Diethylene Glycol
1.5 1 3 核糖醇 1 93.5 氧化铰 醇胺 单丁醚  1.5 1 3 ribitol 1 93.5 oxidative hinge alcohol amine monobutyl ether
2- (—乙  2- (- B
四甲基氢 阿拉伯糖 二甲基乙 Tetramethylhydrogen arabinose dimethyl
5 5 氨基） 乙 5 2 83 氧化铰 醇 酰胺  5 5 amino) ethyl 5 2 83 oxidized hinge alcohol amide
醇  Alcohol
羟乙基二 1 ,3-二甲 甲基氢氧 4 5.5 异丙醇胺 15 木糖醇 2.5 基 -2-咪 73 化铰 唑啉酮 四乙基氢 N-甲基吡 Hydroxyethyldi 1 ,3-dimethylmethylhydrogen hydride 4 5.5 isopropanolamine 15 xylitol 2.5 benzyl-2-methane 73 hydrazinone tetraethyl hydride N-methyl pyridine
5 3.5 二乙醇胺 12 塔罗糖醇 1.5 78 氧化钹 咯烷酮 四丙基氢 N-羟乙基  5 3.5 Diethanolamine 12 Talcitol 1.5 78 Cerium Oxide Pyrrolidone Tetrapropyl Hydrogen N-Hydroxyethyl
6 4 二甘醇胺 7 山¾醇 3.5 79.5 氧化铉 吡咯烷酮 羟乙基二  6 4 diglycolamine 7 sulphate 3.5 79.5 yttrium oxide pyrrolidone hydroxyethyl
二甲基亚 甲基氢氧 3.5 3 单乙醇胺 4.5 甘露醇 4 85 砜 化铵 剛 Dimethylmethylene hydroxide 3.5 3 monoethanolamine 4.5 mannitol 4 85 ammonium sulfonate just
26 7.5 8 ιΐ ; ι '^· (]¾ 30 4.5 0 ¾化铵 i'i:L i圆 Γ  26 7.5 8 ιΐ ; ι '^· (]3⁄4 30 4.5 0 3⁄4 ammonium i'i:L i circle Γ
27 4.5 乙醇胺 10 乳糖醇 2 环 J .砜 80.5 ¾化铵  27 4.5 Ethanolamine 10 Lactitol 2 Ring J. Sulfone 80.5 3⁄4 Ammonium
表 2本发明对比例 4,10,16的配方 Table 2 Formulation of Comparative Example 4, 10, 16 of the Invention
Figure imgf000006_0001
Figure imgf000006_0001
效果实施例 Effect embodiment
为了进一步考察该类清洗液的清洗情况， 本发明采用了如下技术手段： 即将含有光刻胶的晶片浸入清洗剂中，在 25 90°C下利用恒温振荡器以约 60 转 /分的振动频率振荡 5 60分钟， 然后经去离子水洗涤后用高纯氮气吹干。 光刻胶的清洗效果和清洗液对晶片的腐蚀情况如表 3所示。  In order to further investigate the cleaning condition of the cleaning liquid, the present invention adopts the following technical means: immersing the wafer containing the photoresist in the cleaning agent, and using a constant temperature oscillator at a vibration frequency of about 60 rpm at 25 90 ° C It was shaken for 5 minutes for 60 minutes, then washed with deionized water and then dried with high purity nitrogen. The cleaning effect of the photoresist and the corrosion of the cleaning solution on the wafer are shown in Table 3.
表 3对比实施例和部分实施例的晶片清洗情况 晶片清洗结果  Table 3 Comparison of Wafer Cleaning Results of Comparative Examples and Some Embodiments Wafer Cleaning Results
实施例 清洗温度 (°c) 光刻胶清洗时  Example Cleaning temperature (°c) When cleaning photoresist
非金属基 间 (min) A1基材腐蚀情 光亥 ij胶清洗结  Non-metal base (min) A1 substrate corrosion situation
材腐蚀情 况 果  Corrosion of materials
况 实施例 1 25 55 ◎ ◎ ◎ 实施例 3 85 15 ◎ ◎ ◎ 实施例 4 75 20 ◎ ◎ ◎ 对比例 4 75 20 Δ O 〇 实施例 6 50 45 ◎ ◎ ◎ 实施例 7 30 50 ◎ ◎ ◎ 实施例 9 60 35 © ◎ ◎ ¾施例 10 65 2 ◎ ◎ ◎ 对比例 10 65 25 O X OExample 1 25 55 ◎ ◎ ◎ Example 3 85 15 ◎ ◎ ◎ Example 4 75 20 ◎ ◎ ◎ Comparative Example 4 75 20 Δ O 〇 Example 6 50 45 ◎ ◎ ◎ Example 7 30 50 ◎ ◎ ◎ Implementation Example 9 60 35 © ◎ ◎ 3⁄4Example 10 65 2 ◎ ◎ ◎ Comparative Example 10 65 25 OXO
¾施例 12 90 10 ◎ © ◎ 实施例 14 35 60 ◎ ◎ © 实施例 16 70 30 ◎ ◎ 3⁄4 Example 12 90 10 ◎ © ◎ Example 14 35 60 ◎ ◎ © Example 16 70 30 ◎ ◎
对比例 16 70 30 Δ X ◎ 实施例 18 45 30 ◎ ◎ ◎ 实施例 19 80 5 ◎ 实施例 21 40 45 ◎ ◎ ◎ 实施例 23 55 40 ◎ ◎ ◎ 实施例 24 70 20 ◎ ◎ ◎ 实施例 27 75 30 ◎ ◎ ◎
Figure imgf000007_0001
Comparative Example 16 70 30 ΔX ◎ Example 18 45 30 ◎ ◎ ◎ Example 19 80 5 ◎ Example 21 40 45 ◎ ◎ ◎ Example 23 55 40 ◎ ◎ ◎ Example 24 70 20 ◎ ◎ ◎ Example 27 75 30 ◎ ◎ ◎
Figure imgf000007_0001
从表 3可以看出， 本发明的清洗液对光刻胶具有良好的清洗效果， 使用 温度范围广。 另外实施例与对比例的比较可以看出， 本发明特定的季铵氢氧 化合物， 醇胺， 溶剂以及水之间具有协同作用， 本发明所公开的清洗液对金 属和非金属基板等有较好的腐蚀抑制作用， 光刻胶去除能力强。 As can be seen from Table 3, the cleaning liquid of the present invention has a good cleaning effect on the photoresist and has a wide temperature range. Further, in comparison with the comparative examples, it can be seen that the specific quaternary ammonium hydroxide, the alcohol amine, the solvent and the water of the present invention have a synergistic effect, and the cleaning liquid disclosed in the present invention has a comparison with the metal and the non-metal substrate. Good corrosion inhibition, strong photoresist removal ability.
综上， 本发明的积极进步效果在于： 本发明的清洗液具有光刻胶去除能 力强； 对金属和非金属的腐蚀抑制能力强； 具有较大的操作窗口。  In summary, the positive progress of the present invention is as follows: The cleaning liquid of the present invention has strong photoresist removal ability; strong corrosion inhibition ability to metal and non-metal; and large operation window.
应当理解的是， 本发明所述 wt%均指的是质量百分含量。  It should be understood that the wt% of the present invention refers to the mass percentage.
以上对本发明的具体实施例进行了详细描述， 但其只是作为范例， 本发 明并不限制于以上描述的具体实施例。 对于本领域技术人员而言， 任何对本 发明进行的等同修改和替代也都在本发明的范畴之中。 因此， 在不脱离本发 明的精神和范围下所作的均等变换和修改， 都应涵盖在本发明的范围内。  The specific embodiments of the present invention have been described in detail above, but by way of example only, the invention is not limited to the specific embodiments described above. Any equivalent modifications and substitutions of the present invention are also within the scope of the invention. Accordingly, equivalent changes and modifications may be made without departing from the spirit and scope of the invention.

Claims

权利要求 Rights request
1. 一种去除光刻胶的清洗液， 其特征在于， 包括季铵氢氧化物， 醇胺， c4-c6多元醇及溶剂。 A photoresist-removing cleaning liquid characterized by comprising a quaternary ammonium hydroxide, an alkanolamine, a c 4 -c 6 polyhydric alcohol, and a solvent.
2. 如权利要求 1所述的清洗液， 其特征在于， 所述的季铵氢氧化物选自 四甲基氢氧化铵、 四乙基氢氧化铵、 四丙基氢氧化铵、 四丁基氢氧化铵、 甲基三乙基氢氧化铵和羟乙基三甲基氢氧化铵等中的一种或多种。  2. The cleaning solution according to claim 1, wherein the quaternary ammonium hydroxide is selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide. One or more of ammonium, methyltriethylammonium hydroxide, and hydroxyethyltrimethylammonium hydroxide.
3. 如权利要求 1所述的清洗液，其特征在于，所述的醇胺选自单乙醇胺、 二乙醇胺、 三乙醇胺、 正丙醇胺、 异丙醇胺、 2- (二乙氨基） 乙醇、 乙基 二乙醇胺和二甘醇胺中的一种或多种。  3. The cleaning solution according to claim 1, wherein the alcohol amine is selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol. One or more of ethyl diethanolamine and diglycolamine.
4. 如权利要求 1所述的清洗液， 其特征在于， 所述的 C4-C6多元醇选自 苏阿糖、 阿拉伯糖、 木糖、 核糖、 核酮糖、 木酮糖、 葡萄糖、 甘露糖、 半 乳糖、 塔格糖、 阿洛糖、 阿卓糖、 艾杜糖、 塔罗糖、 山梨糖、 阿洛酮糖、 果糖、 苏糖醇、 赤藓醇、 核糖醇、 阿拉伯糖醇、 木糖醇、 塔罗糖醇、 山梨 醇、 甘露醇、 艾杜糖醇和半乳糖醇中的一种或多种。 The cleaning solution according to claim 1, wherein the C 4 -C 6 polyol is selected from the group consisting of threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, Mannose, galactose, tagatose, allose, altrose, idose, talose, sorbose, psicose, fructose, threitol, erythritol, ribitol, arabitol One or more of xylitol, talitol, sorbitol, mannitol, iditol, and galactitol.
5. 如权利要求 1所述的清洗液，其特征在于，所述的溶剂选自亚砜、砜、 咪唑垸酮、 咪唑啉酮、 吡咯烷酮、 醇醚、 酰胺中的一种或多种。  The cleaning solution according to claim 1, wherein the solvent is one or more selected from the group consisting of sulfoxide, sulfone, imidazolium, imidazolidinone, pyrrolidone, alcohol ether, and amide.
6. 如权利要求 5所述的清洗液， 其特征在于， 所述的亚砜较佳的为二甲 基亚砜； 所述的砜较佳的为环丁砜； 所述的咪唑垸酮较佳的为 1,3-二甲基 -2-咪唑烷酮； 所述的咪唑啉酮较佳的为 1,3-二甲基 -2-咪唑啉酮； 所述的吡 咯烷酮较佳的为 N-甲基吡咯垸酮、 N-乙基吡咯烷酮、 N-羟乙基吡咯烷酮 和 N-环己基吡咯垸酮； 所述的酰胺较佳的为二甲基甲酰胺、 二甲基乙酰 胺； 所述的醇醚较佳的为乙二醇醚和丙二醇醚； 所述的乙二醇醚较佳的为 二乙二醇单甲醚、 二乙二醇单乙醚、 二乙二醇单丁醚； 所述的丙二醇醚较 佳的为二丙二醇单甲醚、 二丙二醇单乙醚中的一种或多种。 The cleaning solution according to claim 5, wherein the sulfoxide is preferably dimethyl sulfoxide; the sulfone is preferably sulfolane; and the imidazolium is preferred. Is 1,3-dimethyl-2-imidazolidinone; the imidazolinone is preferably 1,3-dimethyl-2-imidazolidinone; and the pyrrolidone is preferably N-A Pyridone, N-ethylpyrrolidone, N-hydroxyethylpyrrolidone and N-cyclohexylpyrrolidone; the amide is preferably dimethylformamide, dimethylacetamide; The ether is preferably a glycol ether and a propylene glycol ether; the glycol ether is preferably diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether; The propylene glycol ether is preferably one or more of dipropylene glycol monomethyl ether and dipropylene glycol monoethyl ether.
7. 如权利要求 1所述的沾 ·ϋ液， 特征在于， 所述的季铵 化物的 η 量为 0.1 -10wt 7. The mashing liquid according to claim 1, wherein said quaternary ammonium compound has an amount of η of 0.1 - 10 wt.
8. 如权利要求 1 所述的淸洗液， 其特征在于， 所述的醇胺的含量为 0.1 -30wt%。  The rinsing liquid according to claim 1, wherein the alcoholamine is contained in an amount of from 0.1 to 30% by weight.
9. 如权利要求 1所述的清洗液， 其特征在于， 所述的 C4-C6多元醇的含 量为 0.1 -10wt%。 The cleaning solution according to claim 1, wherein the C 4 -C 6 polyol is contained in an amount of from 0.1 to 10% by weight.
10.如权利要求 1所述的清洗液，其特征在于，所述的溶剂的含量为 45-95 wt%。  The cleaning solution according to claim 1, wherein the solvent is contained in an amount of from 45 to 95% by weight.
1 1.如权利要求 1所述的清洗液， 其特征在于， 所述的清洗液包括去离子 水。  A cleaning liquid according to claim 1, wherein said cleaning liquid comprises deionized water.
12.如权利要求 1 1 所述的清洗液， 其特征在于， 所述的去离子水的含量 为 0.1-10 wt% o  The cleaning solution according to claim 1, wherein the deionized water is contained in an amount of 0.1 to 10% by weight.
13.一种使用如权利要求 1所述的清洗液清洗光刻胶的方法。  13. A method of cleaning a photoresist using the cleaning solution of claim 1.
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