WO2009021400A1 - Cleaning composition for removing resist - Google Patents
Cleaning composition for removing resist Download PDFInfo
- Publication number
- WO2009021400A1 WO2009021400A1 PCT/CN2008/001437 CN2008001437W WO2009021400A1 WO 2009021400 A1 WO2009021400 A1 WO 2009021400A1 CN 2008001437 W CN2008001437 W CN 2008001437W WO 2009021400 A1 WO2009021400 A1 WO 2009021400A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cleaning agent
- photoresist cleaning
- agent according
- mass
- photoresist
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract description 35
- 239000000203 mixture Substances 0.000 title abstract description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 27
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims abstract description 13
- -1 alcohol amine Chemical class 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 58
- 239000012459 cleaning agent Substances 0.000 claims description 31
- 238000005260 corrosion Methods 0.000 claims description 18
- 230000007797 corrosion Effects 0.000 claims description 18
- 239000003112 inhibitor Substances 0.000 claims description 9
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 6
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 claims description 4
- 150000008065 acid anhydrides Chemical class 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- GNKAIWRWHBPVDK-UHFFFAOYSA-N 2h-benzotriazole;potassium Chemical compound [K].C1=CC=CC2=NNN=C21 GNKAIWRWHBPVDK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- 239000012964 benzotriazole Substances 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 3
- 229940102253 isopropanolamine Drugs 0.000 claims description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 claims description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- PUTCXBJUWNRWJH-UHFFFAOYSA-N cyclohexa-3,5-diene-1,1,2-triol Chemical compound OC1C=CC=CC1(O)O PUTCXBJUWNRWJH-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- PKHMTIRCAFTBDS-UHFFFAOYSA-N hexanoyl hexanoate Chemical compound CCCCCC(=O)OC(=O)CCCCC PKHMTIRCAFTBDS-UHFFFAOYSA-N 0.000 claims description 2
- 229920000141 poly(maleic anhydride) Polymers 0.000 claims description 2
- 239000000473 propyl gallate Substances 0.000 claims description 2
- 229940075579 propyl gallate Drugs 0.000 claims description 2
- 235000010388 propyl gallate Nutrition 0.000 claims description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 229960004050 aminobenzoic acid Drugs 0.000 claims 1
- BBEJNBLSSWFDSN-UHFFFAOYSA-N methylamino benzoate Chemical compound CNOC(=O)C1=CC=CC=C1 BBEJNBLSSWFDSN-UHFFFAOYSA-N 0.000 claims 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 14
- 239000010949 copper Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000004005 microsphere Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 150000001565 benzotriazoles Chemical class 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- UVNSFSOKRSZVEZ-UHFFFAOYSA-N 2-(2-decoxyethoxy)ethanol Chemical compound CCCCCCCCCCOCCOCCO UVNSFSOKRSZVEZ-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- LZXXNPOYQCLXRS-UHFFFAOYSA-N methyl 4-aminobenzoate Chemical compound COC(=O)C1=CC=C(N)C=C1 LZXXNPOYQCLXRS-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 150000002989 phenols Chemical group 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C11D2111/22—
Definitions
- the present invention relates to a cleaning agent in a semiconductor manufacturing process, and in particular to a photoresist cleaning agent.
- a mask of a photoresist is formed on a surface of a metal such as silicon dioxide, Cu (copper) or the like, and a low-k material, and the pattern is transferred by wet or dry etching after exposure.
- a photoresist material photoresist
- a more common method for improving the removal is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.
- Patent document WO2006/056298A1 utilizes an alkaline cleaning agent consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), ethylene glycol (EG) and water for cleaning light of 50 to 100 microns thick. Engraved. The cleaning agent is substantially non-corrosive to metallic copper.
- TMAH tetramethylammonium hydroxide
- DMSO dimethyl sulfoxide
- EG ethylene glycol
- Patent document US 2204/0074519 A1 utilizes an alkaline cleaning agent consisting of benzyltrimethylammonium hydroxide (BTMAH), N-methylpyrrolidone (NMP), ethylene glycol (EG), corrosion inhibitors, surfactants and stabilizers. , used to clean thicker negative photoresist.
- BTMAH benzyltrimethylammonium hydroxide
- NMP N-methylpyrrolidone
- EG ethylene glycol
- corrosion inhibitors e.g., sodium sulfate
- surfactants and stabilizers ethylene glycol
- Patent document US6040117 utilizes an alkaline cleaning agent consisting of TMAH, dimethyl sulfoxide (DMSO), 1,3,-dimethyl-2-imidazolidinone (DM) and water to immerse the wafer in the cleaning agent. A 20 ⁇ thick film photoresist on metal and dielectric substrates was removed at 50 to 100 °C.
- Confirmation Patent document US5962197 utilizes propylene glycol ether, pyrrolidone, KOH, a surfactant and traces of water to form an alkaline cleaner for cleaning the photoresist.
- Patent Document US 5529887 utilizes diethylene glycol monodecyl ether, ethylene glycol monoalkyl ether, alkali metal hydroxide, water soluble fluoride and water to form an alkaline cleaning agent for cleaning photoresist.
- the above cleaning liquids have a low cleaning ability, and some have a high corrosion rate to the substrate copper; therefore, it is particularly important to develop a cleaning liquid having a higher cleaning ability and a lower corrosion rate of copper.
- the technical problem to be solved by the present invention is to overcome the problems of the prior art photoresist cleaning agent or the cleaning ability, or the problem of strong corrosiveness to the wafer substrate, and to provide a strong cleaning ability, especially to effectively remove the thick film.
- Photoresist a photoresist cleaner that is less corrosive to wafer substrates.
- the photoresist cleaning agent of the present invention contains: potassium hydroxide, dimethyl sulfoxide, pentaerythritol, and an alcohol amine.
- the content of the potassium hydroxide is preferably 0.1 to 10% by mass, more preferably 0.1 to 3% by mass; and the content of the dimethyl sulfoxide is preferably 20% by mass. 98.8%, the mass percentage is 50-98.4%; the content of the pentaerythritol is preferably 1% to 40% by mass, more preferably 1% to 30% by mass; the content of the alcoholamine is preferably the mass.
- the percentage is 0.1 to 50%, and more preferably 0.5 to 30% by mass.
- the alcoholamine is preferably monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine One or more.
- the photoresist cleaning agent of the present invention may further contain a corrosion inhibitor.
- the content of the corrosion inhibitor is preferably less than or equal to 10% by mass, more preferably less than or equal to the mass percentage. 3%.
- the corrosion inhibitor is selected from the group consisting of phenols, carboxylic acids, carboxylic acid esters, 2-mercaptobenzothiazoles, benzotriazoles, acid anhydrides, phosphonic acids and phosphonates.
- One or more of the etchants is preferably one or more of phenol, 1,2-dihydroxyphenol, p-hydroxyphenol and pyrogallol; the carboxylic acid is preferably benzoic acid and/or p-aminobenzene.
- the carboxylic acid esters are preferably one or more of methyl p-aminobenzoate, phthalic acid, methyl phthalate, gallic acid and propyl gallate; benzotriazoles Preferred are potassium benzotriazole salts; the acid anhydrides are preferably one or more of acetic anhydride, hexanoic anhydride, maleic anhydride and maleic anhydride; the preferred phosphoric acid is 1,3- (Hydroxyethyl)-2,4,6-triphosphonic acid. Among them, the most preferred is benzotriazole potassium salt.
- the photoresist cleaning liquid of the present invention can be obtained by simply mixing and mixing the above components.
- the photoresist cleaning solution of the present invention can be used by immersing a semiconductor wafer containing a photoresist in the photoresist cleaning agent of the present invention, immersing it at room temperature to 95 ° C for a suitable period of time, and then taking it out. After washing with deionized water, it can be dried by high-purity nitrogen.
- the reagents and starting materials used in the present invention are commercially available.
- the positive progress of the present invention is that the pentaerythritol and the alkanolamine contained in the photoresist cleaning agent of the present invention can dissolve potassium hydroxide as a solvent, and can also form on the surface of the metal (UBM) under the metal microspheres and the metal microspheres. A protective film to reduce corrosion on the substrate. Moreover, pentaerythritol also has a certain protective effect on metallic copper.
- the photoresist cleaning agent of the invention can effectively remove photoresist (resistance) and other residues on metal, metal alloy or dielectric substrate, and can also be used for cleaning of thick (thickness greater than 100 micron) photoresist. At the same time, it has a lower etching rate for metals such as Cu (copper), and has a good application prospect in the field of microelectronics such as semiconductor wafer cleaning. Summary of the invention
- Table 1 shows the formulations of Examples 1 to 22, and the components were simply mixed uniformly according to the formulation of Table 1, and the photoresist cleaning solutions of the respective examples were obtained.
- Table 2 shows the formulations of the comparative photoresist cleaning solutions 1 to 3 and the photoresist cleaning solutions 1 to 4 of the present invention, and the components were simply mixed uniformly according to the formulation of Table 2 to prepare each photoresist cleaning solution.
- the comparative photoresist cleaning solution 1 did not form a homogeneous solution, indicating that the solubility of KOH in dimethyl sulfoxide was small. Comparing the photoresist cleaning solutions 2 and 3 to form a uniform solution, indicating the addition of pentaerythritol
- the semiconductor wafer containing 120 micron photoresist is immersed in the comparative photoresist cleaning liquid 2 to 3 and the photoresist cleaning liquid 1 to 4 of the present invention, soaked under the conditions in Table 3, and taken out after washing with deionized water. Then dry it with high purity nitrogen.
- Table 3 Comparison of the photoresist cleaning solution 1 ⁇ 3 and the photoresist cleaning solution of the present invention 1 ⁇ 4 wafer cleaning
- the comparative photoresist cleaning solution 2 containing a base and pentaerythritol but no alcohol amine is highly corrosive to the metal microspheres
- the comparative photoresist cleaning liquid containing the alkali and the alcohol amine but no pentaerythritol 3 The corrosion of copper is heavier, and the photoresist cleaning solution of the present invention contains a base, an alcoholamine and pentaerythritol, and has a significant corrosion inhibiting effect on copper and metal microspheres.
- the alcohol amine has a corrosion inhibiting effect on the metal microspheres; however, the addition of the alcohol amine causes the corrosion of Cu to be aggravated; The amount of the alcoholamine and pentaerythritol is appropriately balanced.
Abstract
A cleaning composition for removing resist includes potassium hydroxide, dimethylsulfoxide, pentaerythritol, and alcohol amine. The cleaning composition may clean resist and other residue from a metal, metal alloy and dielectric substrate, and has low etch rate for a metal, such as Cu and the like.
Description
一种光刻胶清洗剂 技术领域 Photoresist cleaning agent
本发明涉及半导体制造工艺中的一种清洗剂， 具体的涉及一种光刻胶清 洗剂。 技术背景 The present invention relates to a cleaning agent in a semiconductor manufacturing process, and in particular to a photoresist cleaning agent. technical background
在通常的半导体制造工艺中， 通过在二氧化硅、 Cu (铜）等金属以及低 k材料等表面上形成光刻胶的掩膜， 曝光后利用湿法或干法刻蚀进行图形转 移。 在晶圆微球植入工艺（bumping technology) 中， 也需要光阻材料（光刻 胶） 形成掩膜， 该掩膜在微球成功植入后同样需要去除， 但由于该光刻胶较 厚， 完全去除常较为困难。 改善去除效果较为常用的方法是采用延长浸泡时 间、 提高浸泡温度和采用更富有攻击性的溶液， 但这常会造成晶片基材的腐 蚀和微球的腐蚀， 从而导致晶片良率的显著降低。 In a conventional semiconductor manufacturing process, a mask of a photoresist is formed on a surface of a metal such as silicon dioxide, Cu (copper) or the like, and a low-k material, and the pattern is transferred by wet or dry etching after exposure. In the wafer microsphere implantation technology, a photoresist material (photoresist) is also required to form a mask, which needs to be removed after the microsphere is successfully implanted, but the photoresist is thicker. It is often difficult to remove completely. A more common method for improving the removal is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.
专利文献 WO2006/056298A1利用由四甲基氢氧化铵（TMAH)、二甲基 亚砜（DMSO), 乙二醇（EG)和水组成碱性清洗剂， 用于清洗 50〜100微米 厚的光刻胶。 该清洗剂对金属铜基本无腐蚀。 Patent document WO2006/056298A1 utilizes an alkaline cleaning agent consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), ethylene glycol (EG) and water for cleaning light of 50 to 100 microns thick. Engraved. The cleaning agent is substantially non-corrosive to metallic copper.
专利文献 US2204/0074519A1利用由苄基三甲基氢氧化铵 （BTMAH)、 N-甲基吡咯烷酮 （NMP)、 乙二醇 （EG)、 腐蚀抑制剂、 表面活性剂和稳定 剂组成碱性清洗剂， 用于清洗较厚的负性光刻胶。 Patent document US 2204/0074519 A1 utilizes an alkaline cleaning agent consisting of benzyltrimethylammonium hydroxide (BTMAH), N-methylpyrrolidone (NMP), ethylene glycol (EG), corrosion inhibitors, surfactants and stabilizers. , used to clean thicker negative photoresist.
专利文献 US6040117利用由 TMAH、 二甲基亚砜 （DMSO)、 1，3，-二甲 基 -2-咪唑烷酮（DM)和水等组成碱性清洗剂， 将晶片浸入该清洗剂中， 于 50〜100°C下除去金属和电介质基材上的 20μίη以上的厚膜光刻胶。 确认本
专利文献 US5962197利用丙二醇醚、 吡咯垸酮、 KOH、 表面活性剂和 微量的水组成碱性清洗剂用于清洗光刻胶。 Patent document US6040117 utilizes an alkaline cleaning agent consisting of TMAH, dimethyl sulfoxide (DMSO), 1,3,-dimethyl-2-imidazolidinone (DM) and water to immerse the wafer in the cleaning agent. A 20 μίη thick film photoresist on metal and dielectric substrates was removed at 50 to 100 °C. Confirmation Patent document US5962197 utilizes propylene glycol ether, pyrrolidone, KOH, a surfactant and traces of water to form an alkaline cleaner for cleaning the photoresist.
专利文献 US5529887利用二乙二醇单垸基醚、乙二醇单烷基醚、碱金属 氢氧化物、 水溶性氟化物和水组成碱性清洗剂， 用于清洗光刻胶。 Patent Document US 5529887 utilizes diethylene glycol monodecyl ether, ethylene glycol monoalkyl ether, alkali metal hydroxide, water soluble fluoride and water to form an alkaline cleaning agent for cleaning photoresist.
然而， 上述清洗液有的清洗能力不强， 有的对基材铜的腐蚀速率较高； 因此开发清洗能力更强、 铜的腐蚀速率更低的清洗液显得尤为重要。 发明概要 However, the above cleaning liquids have a low cleaning ability, and some have a high corrosion rate to the substrate copper; therefore, it is particularly important to develop a cleaning liquid having a higher cleaning ability and a lower corrosion rate of copper. Summary of invention
本发明所要解决的技术问题是为了克服现有技术的光刻胶清洗剂或者 清洗能力不足，或者对晶片基材腐蚀性较强的问题，而提供一种清洗能力强， 尤其能有效去除厚膜光刻胶， 对晶片基材具有较低的腐蚀性的光刻胶清洗 剂。 The technical problem to be solved by the present invention is to overcome the problems of the prior art photoresist cleaning agent or the cleaning ability, or the problem of strong corrosiveness to the wafer substrate, and to provide a strong cleaning ability, especially to effectively remove the thick film. Photoresist, a photoresist cleaner that is less corrosive to wafer substrates.
本发明的光刻胶清洗剂含有：氢氧化钾、二甲基亚砜、季戊四醇和醇胺。 其中， 所述的氢氧化钾的含量较佳的为质量百分比 0.1~10%， 更佳的为 质量百分比 0.1~3%； 所述的二甲基亚砜的含量较佳的为质量百分比 20-98.8%, 质量百分比 50~98.4%； 所述的季戊四醇的含量较佳的为质量百 分比 1〜40%，更佳的为质量百分比 1〜30%；所述的醇胺的含量较佳的为质量 百分比 0.1~50%， 更佳的为质量百分比 0.5〜30%。 The photoresist cleaning agent of the present invention contains: potassium hydroxide, dimethyl sulfoxide, pentaerythritol, and an alcohol amine. Wherein, the content of the potassium hydroxide is preferably 0.1 to 10% by mass, more preferably 0.1 to 3% by mass; and the content of the dimethyl sulfoxide is preferably 20% by mass. 98.8%, the mass percentage is 50-98.4%; the content of the pentaerythritol is preferably 1% to 40% by mass, more preferably 1% to 30% by mass; the content of the alcoholamine is preferably the mass. The percentage is 0.1 to 50%, and more preferably 0.5 to 30% by mass.
其中，所述的醇胺较佳的为单乙醇胺、二乙醇胺、三乙醇胺、正丙醇胺、 异丙醇胺、 2- (二乙氨基）乙醇、 乙基二乙醇胺和二甘醇胺中的一种或多种。 Wherein the alcoholamine is preferably monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine One or more.
本发明的所述的光刻胶清洗剂还可进一步含有缓蚀剂。所述的缓蚀剂的 含量较佳的为小于或等于质量百分比 10%，更佳的为小于或等于质量百分比
3%。所述的缓蚀剂较佳的选自酚类、羧酸类、羧酸酯类、 2-锍基苯并噻唑类、 苯并三氮唑类、 酸酐类、 膦酸和膦酸酯类缓蚀剂中的一种或多种。 所述的酚 类较佳的为苯酚、 1,2-二羟基苯酚、对羟基苯酚和连苯三酚中的一种或多种; 羧酸类较佳的为苯甲酸和 /或对氨基苯甲酸;羧酸酯类较佳的为对氨基苯甲酸 甲酯、 邻苯二甲酸、 邻苯二甲酸甲酯、 没食子酸和没食子酸丙酯中的一种或 多种； 苯并三氮唑类较佳的为苯并三氮唑钾盐； 酸酐类较佳的为乙酸酐、 己 酸酐、 马来酸酐和率马来酸酐中的一种或多种； 磷酸类较佳的为 1,3- (羟乙 基） -2，4，6-三膦酸。 其中， 最佳的为苯并三氮唑钾盐。 The photoresist cleaning agent of the present invention may further contain a corrosion inhibitor. The content of the corrosion inhibitor is preferably less than or equal to 10% by mass, more preferably less than or equal to the mass percentage. 3%. Preferably, the corrosion inhibitor is selected from the group consisting of phenols, carboxylic acids, carboxylic acid esters, 2-mercaptobenzothiazoles, benzotriazoles, acid anhydrides, phosphonic acids and phosphonates. One or more of the etchants. The phenol is preferably one or more of phenol, 1,2-dihydroxyphenol, p-hydroxyphenol and pyrogallol; the carboxylic acid is preferably benzoic acid and/or p-aminobenzene. Formic acid; the carboxylic acid esters are preferably one or more of methyl p-aminobenzoate, phthalic acid, methyl phthalate, gallic acid and propyl gallate; benzotriazoles Preferred are potassium benzotriazole salts; the acid anhydrides are preferably one or more of acetic anhydride, hexanoic anhydride, maleic anhydride and maleic anhydride; the preferred phosphoric acid is 1,3- (Hydroxyethyl)-2,4,6-triphosphonic acid. Among them, the most preferred is benzotriazole potassium salt.
将上述各成分简单混合均匀， 即可制得本发明的光刻胶清洗液。本发明 的光刻胶清洗液可按下述方法使用：将含有光刻胶的半导体晶片浸入本发明 的光刻胶清洗剂中， 在室温至 95°C下浸泡合适的时间后，， 取出用去离子水 洗涤后， 再用高纯氮气吹干即可。 The photoresist cleaning liquid of the present invention can be obtained by simply mixing and mixing the above components. The photoresist cleaning solution of the present invention can be used by immersing a semiconductor wafer containing a photoresist in the photoresist cleaning agent of the present invention, immersing it at room temperature to 95 ° C for a suitable period of time, and then taking it out. After washing with deionized water, it can be dried by high-purity nitrogen.
本发明所用试剂及原料均市售可得。 The reagents and starting materials used in the present invention are commercially available.
本发明的积极进步效果在于：本发明的光刻胶清洗剂中所含的季戊四醇 和醇胺可作为溶剂溶解氢氧化钾， 还可在金属微球和金属微球下面的金属 (UBM)表面形成一层保护膜， 从而降低对基材的腐蚀。 并且， 季戊四醇对 金属铜也有一定的保护作用。本发明的光刻胶清洗剂可有效除去金属、 金属 合金或电介质基材上的光刻胶（光阻）和其它残留物， 也可适用于较厚 （厚 度大于 100微米） 光刻胶的清洗， 同时对于 Cu (铜） 等金属具有较低的蚀 刻速率， 在半导体晶片清洗等微电子领域具有良好的应用前景。
发明内容 The positive progress of the present invention is that the pentaerythritol and the alkanolamine contained in the photoresist cleaning agent of the present invention can dissolve potassium hydroxide as a solvent, and can also form on the surface of the metal (UBM) under the metal microspheres and the metal microspheres. A protective film to reduce corrosion on the substrate. Moreover, pentaerythritol also has a certain protective effect on metallic copper. The photoresist cleaning agent of the invention can effectively remove photoresist (resistance) and other residues on metal, metal alloy or dielectric substrate, and can also be used for cleaning of thick (thickness greater than 100 micron) photoresist. At the same time, it has a lower etching rate for metals such as Cu (copper), and has a good application prospect in the field of microelectronics such as semiconductor wafer cleaning. Summary of the invention
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在 所述的实施例范围之中。 实施例 1~22 The invention is further illustrated by the following examples, which are not intended to limit the invention. Example 1~22
表 1给出了实施例 1~22的配方，按照表 1配方将各成分简单混合均匀， 即可制得各实施例的光刻胶清洗液。 Table 1 shows the formulations of Examples 1 to 22, and the components were simply mixed uniformly according to the formulation of Table 1, and the photoresist cleaning solutions of the respective examples were obtained.
表 1 实施例 1~22的光刻胶清洗液配方 Table 1 Example 1~22 photoresist cleaning solution formula
1,3- (羟乙基） -2，4，6- 1,3-(hydroxyethyl)-2,4,6-
19 3 56.9 15 单乙醇胺 25 0.1 19 3 56.9 15 Monoethanolamine 25 0.1
三膦酸 Triphosphonic acid
20 1 45 22 单乙醇胺 30 2-锍基苯并噻唑 2 20 1 45 22 monoethanolamine 30 2-mercaptobenzothiazole 2
21 5 75 5 单乙醇胺 12 苯并三氮唑 3 21 5 75 5 monoethanolamine 12 benzotriazole 3
1 ,3- (羟乙基） -2，4，6- 1, 3-(hydroxyethyl)-2,4,6-
22 1 84 2 单乙醇胺 12.9 0.1 22 1 84 2 Monoethanolamine 12.9 0.1
三膦酸甲酯 Methyl triphosphonate
效果实施例 Effect embodiment
表 2给出了对比光刻胶清洗液 1〜3和本发明光刻胶清洗液 1~4的配方， 按照表 2配方将各成分简单混合均匀， 制备各光刻胶清洗液。 Table 2 shows the formulations of the comparative photoresist cleaning solutions 1 to 3 and the photoresist cleaning solutions 1 to 4 of the present invention, and the components were simply mixed uniformly according to the formulation of Table 2 to prepare each photoresist cleaning solution.
表 2 对比光刻胶清洗液 1~3和本发明光刻胶清洗液 1~4的配方 Table 2 Comparison of photoresist cleaning solution 1~3 and the photoresist cleaning solution of the present invention 1~4
对比光刻胶清洗液 1不能形成均匀的溶液， 说明 KOH在二甲亚砜中的 溶解度较小。对比光刻胶清洗液 2和 3能形成均匀的溶液， 表明加入季戊四 The comparative photoresist cleaning solution 1 did not form a homogeneous solution, indicating that the solubility of KOH in dimethyl sulfoxide was small. Comparing the photoresist cleaning solutions 2 and 3 to form a uniform solution, indicating the addition of pentaerythritol
将含有 120微米的光刻胶的半导体晶片分别浸入对比光刻胶清洗液 2〜3 和本发明光刻胶清洗液 1~4中，按表 3中条件浸泡，取出用去离子水洗涤后， 再用高纯氮气吹干即可。
表 3 对比光刻胶清洗液 1~3和本发明光刻胶清洗液 1~4对晶圆清洗情 The semiconductor wafer containing 120 micron photoresist is immersed in the comparative photoresist cleaning liquid 2 to 3 and the photoresist cleaning liquid 1 to 4 of the present invention, soaked under the conditions in Table 3, and taken out after washing with deionized water. Then dry it with high purity nitrogen. Table 3 Comparison of the photoresist cleaning solution 1~3 and the photoresist cleaning solution of the present invention 1~4 wafer cleaning
从表 3可以看出， 含有碱和季戊四醇但不含醇胺的对比光刻胶清洗液 2 对金属微球的腐蚀较重，含有碱和醇胺但不含季戊四醇的对比光刻胶清洗液 3对铜的腐蚀较重， 而本发明的光刻胶清洗液含有碱、 醇胺和季戊四醇， 对 铜和金属微球具有明显的腐蚀抑制作用。 此外， 由本发明光刻胶清洗液和对 比光刻胶清洗液 2可看出， 醇胺对金属微球具有的腐蚀抑制作用； 但醇胺的 加入会引起 Cu的腐蚀的加重； 故需在 KOH、醇胺与季戊四醇的用量上作适 当平衡。
As can be seen from Table 3, the comparative photoresist cleaning solution 2 containing a base and pentaerythritol but no alcohol amine is highly corrosive to the metal microspheres, and the comparative photoresist cleaning liquid containing the alkali and the alcohol amine but no pentaerythritol 3 The corrosion of copper is heavier, and the photoresist cleaning solution of the present invention contains a base, an alcoholamine and pentaerythritol, and has a significant corrosion inhibiting effect on copper and metal microspheres. In addition, it can be seen from the photoresist cleaning solution of the present invention and the comparative photoresist cleaning solution 2 that the alcohol amine has a corrosion inhibiting effect on the metal microspheres; however, the addition of the alcohol amine causes the corrosion of Cu to be aggravated; The amount of the alcoholamine and pentaerythritol is appropriately balanced.
Claims
1. 一种光刻胶清洗剂， 其特征在于含有： 氢氧化钾、 二甲基亚砜、 季戊四 醇和醇胺。 A photoresist cleaning agent comprising: potassium hydroxide, dimethyl sulfoxide, pentaerythritol, and an alcohol amine.
2. 如权利要求 1所述的光刻胶清洗剂， 其特征在于： 所述的氢氧化钾的含 量为质量百分比 0.1~10%。 The photoresist cleaning agent according to claim 1, wherein the potassium hydroxide is contained in an amount of 0.1 to 10% by mass.
3. 如权利要求 2所述的光刻胶清洗剂， 其特征在于： 所述的氢氧化钾的含 量为质量百分比 0.1~3%。 The photoresist cleaning agent according to claim 2, wherein the potassium hydroxide is contained in an amount of 0.1 to 3% by mass.
4. 如权利要求 1所述的光刻胶清洗剂， 其特征在于： 所述的二甲基亚砜的 含量为质量百分比 20〜98.8%。 The photoresist cleaning agent according to claim 1, wherein the dimethyl sulfoxide is contained in an amount of 20 to 98.8% by mass.
5. 如权利要求 4所述的光刻胶清洗剂， 其特征在于： 所述的二甲基亚砜的 含量为质量百分比 50~98.4%。 The photoresist cleaning agent according to claim 4, wherein the content of the dimethyl sulfoxide is 50 to 98.4% by mass.
6. 如权利要求 1所述的光刻胶清洗剂， 其特征在于： 所述的季戊四醇的含 量为质量百分比 1〜40%。 The photoresist cleaning agent according to claim 1, wherein the pentaerythritol is contained in an amount of from 1 to 40% by mass.
7. 如权利要求 6所述的光刻胶清洗剂， 其特征在于： 所述的季戊四醇的含 量为质量百分比 1~30%。 The photoresist cleaning agent according to claim 6, wherein the pentaerythritol is contained in an amount of from 1 to 30% by mass.
8. 如权利要求 1所述的光刻胶清洗剂， 其特征在于： 所述的醇胺为单乙醇 胺、 二乙醇胺、 三乙醇胺、 正丙醇胺、 异丙醇胺、 2- (二乙氨基） 乙醇、 乙基二乙醇胺和二甘醇胺中的一种或多种。 The photoresist cleaning agent according to claim 1, wherein the alcohol amine is monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino group). One or more of ethanol, ethyldiethanolamine, and diglycolamine.
9. 如权利要求 1所述的光刻胶清洗剂， 其特征在于： 所述的醇胺的含量为 质量百分比 0.1〜50%。 The photoresist cleaning agent according to claim 1, wherein the content of the alcoholamine is 0.1 to 50% by mass.
10.如权利要求 9所述的光刻胶清洗剂， 其特征在于： 所述的醇胺的含量为 质量百分比 0.5~30%。
The photoresist cleaning agent according to claim 9, wherein the content of the alcoholamine is 0.5 to 30% by mass.
11.如权利要求 1所述的光刻胶清洗剂， 其特征在于： 所述的光刻胶清洗剂 还含有缓蚀剂。 The photoresist cleaning agent according to claim 1, wherein the photoresist cleaning agent further contains a corrosion inhibitor.
12.如权利要求 11所述的光刻胶清洗剂，其特征在于：所述的缓蚀剂为酚类、 羧酸类、 羧酸酯类、 2-巯基苯并噻唑类、 苯并三氮唑类、 酸酐类、 膦酸 和膦酸酯类缓蚀剂中的一种或多种。 The photoresist cleaning agent according to claim 11, wherein the corrosion inhibitor is a phenol, a carboxylic acid, a carboxylic acid ester, a 2-mercaptobenzothiazole, or a benzotriazole. One or more of an azole, an acid anhydride, a phosphonic acid, and a phosphonate corrosion inhibitor.
13.如权利要求 12所述的光刻胶清洗剂， 其特征在于： 所述的酚类为苯酚、 The photoresist cleaning agent according to claim 12, wherein: the phenol is phenol,
1,2-二羟基苯酚、对羟基苯酚和连苯三酚中的一种或多种； 所述的羧酸类 为苯甲酸和 /或对氨基苯甲酸； 所述的羧酸酯类为对氨基苯甲酸甲酯、 邻 苯二甲酸、邻苯二甲酸甲酯、 没食子酸和没食子酸丙酯中的一种或多种； 所述的苯并三氮唑类为苯并三氮唑钾盐； 所述的酸酐类为乙酸酐、 己酸 酐、 马来酸酐和聚马来酸酐中的一种或多种； 所述的磷酸类为 1,3- (羟 乙基） -2，4，6-三膦酸。 One or more of 1,2-dihydroxyphenol, p-hydroxyphenol and pyrogallol; the carboxylic acid is benzoic acid and/or p-aminobenzoic acid; One or more of methyl aminobenzoate, phthalic acid, methyl phthalate, gallic acid, and propyl gallate; the benzotriazole is a potassium benzotriazole salt The acid anhydride is one or more of acetic anhydride, hexanoic anhydride, maleic anhydride, and polymaleic anhydride; the phosphoric acid is 1,3-(hydroxyethyl)-2,4,6 - Triphosphonic acid.
14.如权利要求 11所述的光刻胶清洗剂， 其特征在于： 所述的缓蚀剂的含量 为小于或等于质量百分比 10%。 The photoresist cleaning agent according to claim 11, wherein the corrosion inhibitor is contained in an amount of less than or equal to 10% by mass.
15.如权利要求 14所述的光刻胶清洗剂， 其特征在于： 所述的缓蚀剂的含量 为小于或等于质量百分比 3%。
The photoresist cleaning agent according to claim 14, wherein the corrosion inhibitor is contained in an amount of less than or equal to 3% by mass.
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| CN102096345A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Thick-film photoresist cleaning solution and cleaning method thereof |
| CN102566330B (en) * | 2010-12-10 | 2016-04-20 | 安集微电子（上海）有限公司 | A kind of thick film photolithography glue cleaning fluid |
| TW201224138A (en) * | 2010-12-10 | 2012-06-16 | Anji Microelectronics Co Ltd | Thick-film photoresist stripper solution |
| CN102566332B (en) * | 2010-12-30 | 2016-04-20 | 安集微电子（上海）有限公司 | A kind of thick film photolithography glue cleaning fluid |
| WO2012083587A1 (en) * | 2010-12-21 | 2012-06-28 | 安集微电子（上海）有限公司 | Cleaning liquid for thick film photoresists |
| CN102566331B (en) * | 2010-12-21 | 2016-08-03 | 安集微电子（上海）有限公司 | A kind of thick film photolithography glue cleanout fluid |
| CN102540774A (en) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | Cleaning agent for thick-film photoresist |
| CN102981376A (en) * | 2011-09-05 | 2013-03-20 | 安集微电子（上海）有限公司 | Photoresist cleaning solution |
| CN103389627A (en) * | 2012-05-11 | 2013-11-13 | 安集微电子科技(上海)有限公司 | Photoresist cleaning liquid |
| CN103809393A (en) * | 2012-11-12 | 2014-05-21 | 安集微电子科技(上海)有限公司 | Cleaning liquid for removing photoresist residues |
| CN103513520A (en) * | 2013-09-24 | 2014-01-15 | 刘超 | Antiseptic mixture and photoresist stripper composition |
| CN103529656A (en) * | 2013-10-23 | 2014-01-22 | 杨桂望 | Imidazoline inhibitor containing photosensitive film cleaning solution |
| CN103616805A (en) * | 2013-10-25 | 2014-03-05 | 青岛华仁技术孵化器有限公司 | Cleaning fluid used in semiconductor manufacture process |
| CN103605269B (en) * | 2013-10-25 | 2016-11-23 | 马佳 | Light-sensitive surface cleanout fluid for semiconductor manufacturing |
| CN103616806B (en) * | 2013-10-25 | 2017-02-08 | 马佳 | Cleaning fluid for photosensitive membrane |
| CN104678719A (en) * | 2013-11-28 | 2015-06-03 | 安集微电子科技(上海)有限公司 | Photoresist cleaning liquid with extremely-low corrosion to metals |
| CN104531397A (en) * | 2014-11-18 | 2015-04-22 | 惠晶显示科技（苏州）有限公司 | Cleaning solution for sheet glass substrate thinning pre-cleaning, and application thereof |
| CN106919011B (en) * | 2015-12-25 | 2021-12-17 | 安集微电子科技（上海）股份有限公司 | Hydroxylamine stripping cleaning solution rich in water |
| CN106367215A (en) * | 2016-08-19 | 2017-02-01 | 广东泰强化工实业有限公司 | Aerosol multifunctional cleaning agent and preparation method thereof |
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| US7282324B2 (en) * | 2004-01-05 | 2007-10-16 | Microchem Corp. | Photoresist compositions, hardened forms thereof, hardened patterns thereof and metal patterns formed using them |
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- 2008-08-08 CN CN200880103488.3A patent/CN101971103B/en not_active Expired - Fee Related
- 2008-08-08 WO PCT/CN2008/001437 patent/WO2009021400A1/en active Application Filing
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| US20050119143A1 (en) * | 1999-01-27 | 2005-06-02 | Egbe Matthew I. | Compositions for the removal of organic and inorganic residues |
| US20030181344A1 (en) * | 2002-03-12 | 2003-09-25 | Kazuto Ikemoto | Photoresist stripping composition and cleaning composition |
| CN1715389A (en) * | 2004-07-01 | 2006-01-04 | 气体产品与化学公司 | Composition for stripping and cleaning and use thereof |
| CN1743965A (en) * | 2005-09-30 | 2006-03-08 | 石深泉 | Environmental-protection type regenerative PS plate ink and photoresists stripping agent and its preparing method |
| CN101187788A (en) * | 2006-11-17 | 2008-05-28 | 安集微电子（上海）有限公司 | Low etching relative thick photoresist cleaning liquor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101971103B (en) | 2013-02-13 |
| CN101971103A (en) | 2011-02-09 |
| CN101364056A (en) | 2009-02-11 |
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