WO2009021400A1 - Composition de nettoyage pour retirer une réserve - Google Patents
Composition de nettoyage pour retirer une réserve Download PDFInfo
- Publication number
- WO2009021400A1 WO2009021400A1 PCT/CN2008/001437 CN2008001437W WO2009021400A1 WO 2009021400 A1 WO2009021400 A1 WO 2009021400A1 CN 2008001437 W CN2008001437 W CN 2008001437W WO 2009021400 A1 WO2009021400 A1 WO 2009021400A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cleaning agent
- photoresist cleaning
- agent according
- mass
- photoresist
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract description 35
- 239000000203 mixture Substances 0.000 title abstract description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 27
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims abstract description 13
- -1 alcohol amine Chemical class 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 58
- 239000012459 cleaning agent Substances 0.000 claims description 31
- 238000005260 corrosion Methods 0.000 claims description 18
- 230000007797 corrosion Effects 0.000 claims description 18
- 239000003112 inhibitor Substances 0.000 claims description 9
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 6
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 claims description 4
- 150000008065 acid anhydrides Chemical class 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- GNKAIWRWHBPVDK-UHFFFAOYSA-N 2h-benzotriazole;potassium Chemical compound [K].C1=CC=CC2=NNN=C21 GNKAIWRWHBPVDK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- 239000012964 benzotriazole Substances 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 3
- 229940102253 isopropanolamine Drugs 0.000 claims description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 claims description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- PUTCXBJUWNRWJH-UHFFFAOYSA-N cyclohexa-3,5-diene-1,1,2-triol Chemical compound OC1C=CC=CC1(O)O PUTCXBJUWNRWJH-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- PKHMTIRCAFTBDS-UHFFFAOYSA-N hexanoyl hexanoate Chemical compound CCCCCC(=O)OC(=O)CCCCC PKHMTIRCAFTBDS-UHFFFAOYSA-N 0.000 claims description 2
- 229920000141 poly(maleic anhydride) Polymers 0.000 claims description 2
- 239000000473 propyl gallate Substances 0.000 claims description 2
- 229940075579 propyl gallate Drugs 0.000 claims description 2
- 235000010388 propyl gallate Nutrition 0.000 claims description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 2
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 229960004050 aminobenzoic acid Drugs 0.000 claims 1
- BBEJNBLSSWFDSN-UHFFFAOYSA-N methylamino benzoate Chemical compound CNOC(=O)C1=CC=CC=C1 BBEJNBLSSWFDSN-UHFFFAOYSA-N 0.000 claims 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 14
- 239000010949 copper Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000004005 microsphere Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 150000001565 benzotriazoles Chemical class 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- UVNSFSOKRSZVEZ-UHFFFAOYSA-N 2-(2-decoxyethoxy)ethanol Chemical compound CCCCCCCCCCOCCOCCO UVNSFSOKRSZVEZ-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- LZXXNPOYQCLXRS-UHFFFAOYSA-N methyl 4-aminobenzoate Chemical compound COC(=O)C1=CC=C(N)C=C1 LZXXNPOYQCLXRS-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 150000002989 phenols Chemical group 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Definitions
- the present invention relates to a cleaning agent in a semiconductor manufacturing process, and in particular to a photoresist cleaning agent.
- a mask of a photoresist is formed on a surface of a metal such as silicon dioxide, Cu (copper) or the like, and a low-k material, and the pattern is transferred by wet or dry etching after exposure.
- a photoresist material photoresist
- a more common method for improving the removal is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.
- Patent document WO2006/056298A1 utilizes an alkaline cleaning agent consisting of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), ethylene glycol (EG) and water for cleaning light of 50 to 100 microns thick. Engraved. The cleaning agent is substantially non-corrosive to metallic copper.
- TMAH tetramethylammonium hydroxide
- DMSO dimethyl sulfoxide
- EG ethylene glycol
- Patent document US 2204/0074519 A1 utilizes an alkaline cleaning agent consisting of benzyltrimethylammonium hydroxide (BTMAH), N-methylpyrrolidone (NMP), ethylene glycol (EG), corrosion inhibitors, surfactants and stabilizers. , used to clean thicker negative photoresist.
- BTMAH benzyltrimethylammonium hydroxide
- NMP N-methylpyrrolidone
- EG ethylene glycol
- corrosion inhibitors e.g., sodium sulfate
- surfactants and stabilizers ethylene glycol
- Patent document US6040117 utilizes an alkaline cleaning agent consisting of TMAH, dimethyl sulfoxide (DMSO), 1,3,-dimethyl-2-imidazolidinone (DM) and water to immerse the wafer in the cleaning agent. A 20 ⁇ thick film photoresist on metal and dielectric substrates was removed at 50 to 100 °C.
- Confirmation Patent document US5962197 utilizes propylene glycol ether, pyrrolidone, KOH, a surfactant and traces of water to form an alkaline cleaner for cleaning the photoresist.
- Patent Document US 5529887 utilizes diethylene glycol monodecyl ether, ethylene glycol monoalkyl ether, alkali metal hydroxide, water soluble fluoride and water to form an alkaline cleaning agent for cleaning photoresist.
- the above cleaning liquids have a low cleaning ability, and some have a high corrosion rate to the substrate copper; therefore, it is particularly important to develop a cleaning liquid having a higher cleaning ability and a lower corrosion rate of copper.
- the technical problem to be solved by the present invention is to overcome the problems of the prior art photoresist cleaning agent or the cleaning ability, or the problem of strong corrosiveness to the wafer substrate, and to provide a strong cleaning ability, especially to effectively remove the thick film.
- Photoresist a photoresist cleaner that is less corrosive to wafer substrates.
- the photoresist cleaning agent of the present invention contains: potassium hydroxide, dimethyl sulfoxide, pentaerythritol, and an alcohol amine.
- the content of the potassium hydroxide is preferably 0.1 to 10% by mass, more preferably 0.1 to 3% by mass; and the content of the dimethyl sulfoxide is preferably 20% by mass. 98.8%, the mass percentage is 50-98.4%; the content of the pentaerythritol is preferably 1% to 40% by mass, more preferably 1% to 30% by mass; the content of the alcoholamine is preferably the mass.
- the percentage is 0.1 to 50%, and more preferably 0.5 to 30% by mass.
- the alcoholamine is preferably monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine One or more.
- the photoresist cleaning agent of the present invention may further contain a corrosion inhibitor.
- the content of the corrosion inhibitor is preferably less than or equal to 10% by mass, more preferably less than or equal to the mass percentage. 3%.
- the corrosion inhibitor is selected from the group consisting of phenols, carboxylic acids, carboxylic acid esters, 2-mercaptobenzothiazoles, benzotriazoles, acid anhydrides, phosphonic acids and phosphonates.
- One or more of the etchants is preferably one or more of phenol, 1,2-dihydroxyphenol, p-hydroxyphenol and pyrogallol; the carboxylic acid is preferably benzoic acid and/or p-aminobenzene.
- the carboxylic acid esters are preferably one or more of methyl p-aminobenzoate, phthalic acid, methyl phthalate, gallic acid and propyl gallate; benzotriazoles Preferred are potassium benzotriazole salts; the acid anhydrides are preferably one or more of acetic anhydride, hexanoic anhydride, maleic anhydride and maleic anhydride; the preferred phosphoric acid is 1,3- (Hydroxyethyl)-2,4,6-triphosphonic acid. Among them, the most preferred is benzotriazole potassium salt.
- the photoresist cleaning liquid of the present invention can be obtained by simply mixing and mixing the above components.
- the photoresist cleaning solution of the present invention can be used by immersing a semiconductor wafer containing a photoresist in the photoresist cleaning agent of the present invention, immersing it at room temperature to 95 ° C for a suitable period of time, and then taking it out. After washing with deionized water, it can be dried by high-purity nitrogen.
- the reagents and starting materials used in the present invention are commercially available.
- the positive progress of the present invention is that the pentaerythritol and the alkanolamine contained in the photoresist cleaning agent of the present invention can dissolve potassium hydroxide as a solvent, and can also form on the surface of the metal (UBM) under the metal microspheres and the metal microspheres. A protective film to reduce corrosion on the substrate. Moreover, pentaerythritol also has a certain protective effect on metallic copper.
- the photoresist cleaning agent of the invention can effectively remove photoresist (resistance) and other residues on metal, metal alloy or dielectric substrate, and can also be used for cleaning of thick (thickness greater than 100 micron) photoresist. At the same time, it has a lower etching rate for metals such as Cu (copper), and has a good application prospect in the field of microelectronics such as semiconductor wafer cleaning. Summary of the invention
- Table 1 shows the formulations of Examples 1 to 22, and the components were simply mixed uniformly according to the formulation of Table 1, and the photoresist cleaning solutions of the respective examples were obtained.
- Table 2 shows the formulations of the comparative photoresist cleaning solutions 1 to 3 and the photoresist cleaning solutions 1 to 4 of the present invention, and the components were simply mixed uniformly according to the formulation of Table 2 to prepare each photoresist cleaning solution.
- the comparative photoresist cleaning solution 1 did not form a homogeneous solution, indicating that the solubility of KOH in dimethyl sulfoxide was small. Comparing the photoresist cleaning solutions 2 and 3 to form a uniform solution, indicating the addition of pentaerythritol
- the semiconductor wafer containing 120 micron photoresist is immersed in the comparative photoresist cleaning liquid 2 to 3 and the photoresist cleaning liquid 1 to 4 of the present invention, soaked under the conditions in Table 3, and taken out after washing with deionized water. Then dry it with high purity nitrogen.
- Table 3 Comparison of the photoresist cleaning solution 1 ⁇ 3 and the photoresist cleaning solution of the present invention 1 ⁇ 4 wafer cleaning
- the comparative photoresist cleaning solution 2 containing a base and pentaerythritol but no alcohol amine is highly corrosive to the metal microspheres
- the comparative photoresist cleaning liquid containing the alkali and the alcohol amine but no pentaerythritol 3 The corrosion of copper is heavier, and the photoresist cleaning solution of the present invention contains a base, an alcoholamine and pentaerythritol, and has a significant corrosion inhibiting effect on copper and metal microspheres.
- the alcohol amine has a corrosion inhibiting effect on the metal microspheres; however, the addition of the alcohol amine causes the corrosion of Cu to be aggravated; The amount of the alcoholamine and pentaerythritol is appropriately balanced.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
L'invention porte sur une composition de nettoyage pour retirer une réserve, qui comprend de l'hydroxyde de potassium, du diméthylsulfoxyde, du pentaérythritol et de l'amine-alcool. La composition de nettoyage peut nettoyer une réserve et autres résidus d'un substrat métallique, d'alliage métallique et diélectrique, et a une vitesse de gravure faible pour un métal, tel que Cu et similaires.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200880103488.3A CN101971103B (zh) | 2007-08-10 | 2008-08-08 | 一种光刻胶清洗剂 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2007100447903A CN101364056A (zh) | 2007-08-10 | 2007-08-10 | 一种光刻胶清洗剂 |
CN200710044790.3 | 2007-08-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009021400A1 true WO2009021400A1 (fr) | 2009-02-19 |
Family
ID=40350360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2008/001437 WO2009021400A1 (fr) | 2007-08-10 | 2008-08-08 | Composition de nettoyage pour retirer une réserve |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN101364056A (fr) |
WO (1) | WO2009021400A1 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102096345A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗液及其清洗方法 |
CN102566332B (zh) * | 2010-12-30 | 2016-04-20 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗液 |
CN102566330B (zh) * | 2010-12-10 | 2016-04-20 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗液 |
WO2012075686A1 (fr) * | 2010-12-10 | 2012-06-14 | 安集微电子(上海)有限公司 | Solution de décapant de résine photosensible en film épais |
CN102566331B (zh) * | 2010-12-21 | 2016-08-03 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗液 |
WO2012083587A1 (fr) * | 2010-12-21 | 2012-06-28 | 安集微电子(上海)有限公司 | Liquide de nettoyage pour photoréserves en couche épaisse |
CN102540774A (zh) * | 2010-12-21 | 2012-07-04 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗剂 |
CN102981376A (zh) * | 2011-09-05 | 2013-03-20 | 安集微电子(上海)有限公司 | 一种光刻胶清洗液 |
CN103389627A (zh) * | 2012-05-11 | 2013-11-13 | 安集微电子科技(上海)有限公司 | 一种光刻胶清洗液 |
CN103809393A (zh) * | 2012-11-12 | 2014-05-21 | 安集微电子科技(上海)有限公司 | 一种去除光阻残留物的清洗液 |
CN103513520A (zh) * | 2013-09-24 | 2014-01-15 | 刘超 | 防腐剂混合物和光刻胶剥离剂组合物 |
CN103529656A (zh) * | 2013-10-23 | 2014-01-22 | 杨桂望 | 包含咪唑啉缓蚀剂的感光膜清洗液 |
CN103616806B (zh) * | 2013-10-25 | 2017-02-08 | 马佳 | 感光膜清洗液 |
CN103605269B (zh) * | 2013-10-25 | 2016-11-23 | 马佳 | 用于半导体制造的感光膜清洗液 |
CN103616805A (zh) * | 2013-10-25 | 2014-03-05 | 青岛华仁技术孵化器有限公司 | 半导体制造过程中使用的清洗液 |
CN104678719A (zh) * | 2013-11-28 | 2015-06-03 | 安集微电子科技(上海)有限公司 | 一种对金属极低腐蚀的光刻胶清洗液 |
CN104531397A (zh) * | 2014-11-18 | 2015-04-22 | 惠晶显示科技(苏州)有限公司 | 一种平板玻璃基板减薄预清洗用清洗液及其应用 |
CN106919011B (zh) * | 2015-12-25 | 2021-12-17 | 安集微电子科技(上海)股份有限公司 | 一种富含水的羟胺剥离清洗液 |
CN106367215A (zh) * | 2016-08-19 | 2017-02-01 | 广东泰强化工实业有限公司 | 一种气雾多功能清洗剂及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030181344A1 (en) * | 2002-03-12 | 2003-09-25 | Kazuto Ikemoto | Photoresist stripping composition and cleaning composition |
US20050119143A1 (en) * | 1999-01-27 | 2005-06-02 | Egbe Matthew I. | Compositions for the removal of organic and inorganic residues |
CN1715389A (zh) * | 2004-07-01 | 2006-01-04 | 气体产品与化学公司 | 用于清除和清洗的组合物及其用途 |
CN1743965A (zh) * | 2005-09-30 | 2006-03-08 | 石深泉 | 环保型再生ps版油墨及感光胶剥离剂及其配制方法 |
CN101187788A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性较厚光刻胶清洗液 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4169068A (en) * | 1976-08-20 | 1979-09-25 | Japan Synthetic Rubber Company Limited | Stripping liquor composition for removing photoresists comprising hydrogen peroxide |
JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
US7282324B2 (en) * | 2004-01-05 | 2007-10-16 | Microchem Corp. | Photoresist compositions, hardened forms thereof, hardened patterns thereof and metal patterns formed using them |
-
2007
- 2007-08-10 CN CNA2007100447903A patent/CN101364056A/zh active Pending
-
2008
- 2008-08-08 WO PCT/CN2008/001437 patent/WO2009021400A1/fr active Application Filing
- 2008-08-08 CN CN200880103488.3A patent/CN101971103B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050119143A1 (en) * | 1999-01-27 | 2005-06-02 | Egbe Matthew I. | Compositions for the removal of organic and inorganic residues |
US20030181344A1 (en) * | 2002-03-12 | 2003-09-25 | Kazuto Ikemoto | Photoresist stripping composition and cleaning composition |
CN1715389A (zh) * | 2004-07-01 | 2006-01-04 | 气体产品与化学公司 | 用于清除和清洗的组合物及其用途 |
CN1743965A (zh) * | 2005-09-30 | 2006-03-08 | 石深泉 | 环保型再生ps版油墨及感光胶剥离剂及其配制方法 |
CN101187788A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性较厚光刻胶清洗液 |
Also Published As
Publication number | Publication date |
---|---|
CN101364056A (zh) | 2009-02-11 |
CN101971103A (zh) | 2011-02-09 |
CN101971103B (zh) | 2013-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009021400A1 (fr) | Composition de nettoyage pour retirer une réserve | |
TWI461525B (zh) | 用於CoWP及多孔介電材料的濕清洗組合物 | |
JP3796622B2 (ja) | 非腐食性のストリッピングおよびクリーニング組成物 | |
JP5426738B2 (ja) | レゾルシノールを含有する剥離溶液を用いた金属保護の改善 | |
CN101663620B (zh) | 低蚀刻性光刻胶清洗剂 | |
KR101493294B1 (ko) | 두꺼운 필름 레지스트를 제거하기 위한 스트리핑 및 세정 조성물 | |
JP2018164091A (ja) | クリーニング用組成物 | |
TWI647337B (zh) | 清潔配方 | |
WO2009006783A1 (fr) | Composition de nettoyage permettant d'enlever le résist | |
JP2001523356A (ja) | レジスト剥離および洗浄用の非腐食性組成物 | |
JP2010535422A (ja) | マイクロ電子デバイスから残渣を除去するための非フッ化物含有組成物 | |
JP2007243162A (ja) | 洗浄組成物 | |
WO2010060274A1 (fr) | Détergent pour éliminer la résine photosensible | |
WO2012009968A1 (fr) | Solution de nettoyage de résine photosensible | |
WO2008058460A1 (fr) | Solution de nettoyage à faible capacité de morsure pour photorésine plus épaisse | |
WO2008071077A1 (fr) | Composé nettoyant pour éliminer un photorésist | |
WO2008052424A1 (fr) | Composé de nettoyage pour éliminer le photorésist | |
WO2009155782A1 (fr) | Détergent d’élimination d’une photorésine | |
WO2012016425A1 (fr) | Fluide de lavage de photorésine | |
WO2008046305A1 (fr) | Agent de nettoyage pour photoresist faiblement gravée et procédé de nettoyage correspondant | |
WO2010037263A1 (fr) | Solution de nettoyage éliminant la photorésine | |
WO2008049332A1 (fr) | Composé de nettoyage pour éliminer un photorésist | |
WO2014079145A1 (fr) | Solution nettoyante permettant d'éliminer une photorésine | |
KR101341701B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법 | |
CN102298277B (zh) | 一种用于厚膜光刻胶的清洗液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880103488.3 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08800490 Country of ref document: EP Kind code of ref document: A1 |
|
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
NENP | Non-entry into the national phase |
Ref country code: DE |
|
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
122 | Ep: pct application non-entry in european phase |
Ref document number: 08800490 Country of ref document: EP Kind code of ref document: A1 |