WO2008049332A1 - Composé de nettoyage pour éliminer un photorésist - Google Patents

Composé de nettoyage pour éliminer un photorésist Download PDF

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Publication number
WO2008049332A1
WO2008049332A1 PCT/CN2007/003021 CN2007003021W WO2008049332A1 WO 2008049332 A1 WO2008049332 A1 WO 2008049332A1 CN 2007003021 W CN2007003021 W CN 2007003021W WO 2008049332 A1 WO2008049332 A1 WO 2008049332A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning agent
ether
agent according
photoresist cleaning
photoresist
Prior art date
Application number
PCT/CN2007/003021
Other languages
English (en)
Chinese (zh)
Inventor
Libbert Hongxiu Peng
Robert Yongtao Shi
Bing Liu
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd. filed Critical Anji Microelectronics (Shanghai) Co., Ltd.
Priority to CNA2007800374807A priority Critical patent/CN101523299A/zh
Publication of WO2008049332A1 publication Critical patent/WO2008049332A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Definitions

  • the present invention relates to the field of cleaning processes in semiconductor fabrication, and more particularly to a photoresist cleaning agent.
  • a photoresist mask is formed on a surface of a metal such as silicon dioxide, ⁇ ! (copper), or a low-k material, and the pattern is transferred by wet or dry etching after exposure.
  • a metal such as silicon dioxide, ⁇ ! (copper), or a low-k material
  • the pattern is transferred by wet or dry etching after exposure.
  • Fast cleaning process of a low temperature process is an important development direction for producing a semiconductor wafer 9
  • the chemical cleaning process of the semiconductor wafer into line photoresist, the cleaning agents often cause corrosion of the substrate wafer.
  • metal corrosion is a relatively common and very serious problem, often resulting in a significant reduction in wafer yield.
  • the photoresist cleaning agent is mainly composed of a polar organic solvent, a surfactant, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in a cleaning agent or rinsing the semiconductor wafer with a cleaning agent.
  • Patent document US5863346 and patent document WO9739092 use dodecylbenzenesulfonic acid as a surfactant and a photoresist cleaning agent with m-diisopropylbenzene to immerse the wafer in the cleaning agent at 65-80 ° C.
  • the photoresist on the metal substrate is removed.
  • the corrosion of the semiconductor wafer substrate is high, and the photoresist on the semiconductor wafer cannot be completely removed, and the cleaning ability is insufficient.
  • Patent document US6368421 and patent document WO0003306 use BASF Plurafac® B-26 linear alkoxy alcohol as a surfactant, and a photoresist cleaning agent composed of sulfolane (SFL), dipropylene glycol monomethyl ether (DPGME) and deionized water.
  • SFL sulfolane
  • DPGME dipropylene glycol monomethyl ether
  • the wafer is immersed in the cleaning agent to remove the photoresist on the metal and dielectric substrates at 25 to 85 Torr. This photoresist cleaning agent cannot completely remove the photoresist on the semiconductor wafer, cleaning energy Not enough.
  • the photoresist cleaning agent of the present invention comprises dimethyl sulfoxide and quaternary ammonium hydroxide, and is characterized by further comprising a surfactant: a hydroxyl group-containing polyether (HPE).
  • HPE hydroxyl group-containing polyether
  • the hydroxyl-containing polyether can improve the amount of quaternary ammonium hydroxide dissolved in the cleaning agent and the ability of the cleaning agent to wet the semiconductor wafer substrate.
  • the content of the hydroxyl group-containing polyether is preferably 0.001 to 15% by weight, more preferably 0.05 to 5.0% by weight ; and the content of the dimethyl sulfoxide is preferably 70 to 99% by weight, more Preferably, the content of the quaternary ammonium hydroxide is from 0.01 to 15% by weight, more preferably from 5.0 to 10% by weight.
  • the quaternary ammonium hydroxide is preferably tetramethylammonium hydroxide (TMAH:), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide or benzyltrimethyl. Based on ammonium hydroxide. Of these, tetramethylammonium hydroxide, tetraethylammonium hydroxide or tetrabutylammonium hydroxide is more preferred, and tetramethylammonium hydroxide is most preferred.
  • TMAH tetramethylammonium hydroxide
  • tetraethylammonium hydroxide or tetrabutylammonium hydroxide is more preferred, and tetramethylammonium hydroxide is most preferred.
  • the photoresist cleaning agent may further comprise a polar organic co-solvent.
  • the content of the polar organic co-solvent is preferably from 0 to 29.5 wt%, more preferably from 5.0 to 25 wt%.
  • the polar organic co-solvent is preferably selected from the group consisting of sulfoxides, sulfones, imidazolidinones, alkyl glycol monoalkyl ethers and/or alkyl glycol aryl ethers.
  • the sulfoxide is preferably diethyl sulfoxide or methyl sulfoxide; and the sulfone is preferably methyl sulfone, ethyl sulfone and sulfolane, more preferably sulfolane;
  • Imidazoxone is preferably 2-imidazolidinone (MI), 1,3-dimethyl-2-imidazolium (DMI) or 1,3-diethyl- 2- imidazolidinone, more preferably Is 1,3-dimethyl-2-imidazolium;
  • the mercaptodiol monoalkyl ether is preferably ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, Diethylene glycol monomethyl ether, Diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, prop
  • POMPE isopropyl glycol monophenyl ether, diethylene glycol monophenyl ether, dipropylene glycol monophenyl ether, diisopropyl glycol monophenyl ether, ethylene glycol monobenzyl ether, propylene glycol monobenzyl ether or different Propylene glycol monobenzyl ether, more preferably ethylene glycol monophenyl ether or propylene glycol monophenyl ether.
  • the photoresist cleaning agent may further comprise water.
  • the water content is preferably 0 29.5 wt%, more preferably 0.5 to 25 wt%.
  • the photoresist cleaning agent may further comprise a corrosion inhibitor.
  • the content of the corrosion inhibitor is preferably from 0 to 10% by weight, more preferably from 0.05 to 5.0% by weight.
  • the corrosion inhibitor is selected from the group consisting of phenols, carboxylic acid (esters), acid anhydrides or phosphonates.
  • the phenol is preferably 1,2-dihydroxyphenol, p-hydroxyphenol or pyrogallol, more preferably pyrogallol; and the carboxylic acid is preferably Benzoic acid, p-aminobenzoic acid (PABA), phthalic acid (PA), gallic acid (GA) or propyl gallate, more preferably p-aminobenzoic acid, phthalic acid or gallic acid;
  • the acid anhydrides are preferably acetic anhydride, cesium propionate, hexanoic anhydride or (poly)maleic anhydride, more preferably polymaleic anhydride;
  • the phosphonic acid type is preferably 1,3- ( Hydroxyethyl)-2,4,6-triphosphonic acid (HEDPA), aminotrimethylenephosphonic acid (ATMP) or 2-phosphonic acid butane-1,2,4-tricarboxylic acid (PBTCA), more preferably The 1,3-(hydroxyethyl)-2,4,6-triphosphin
  • the photoresist cleaning agent of the present invention can be used as follows: a photoresist-coated semiconductor crystal The sheet is immersed in the photoresist cleaning agent of the invention, and is slowly shaken for 10 to 30 minutes at room temperature to 85 ° C using a constant temperature oscillator, washed with deionized water and then dried with high purity nitrogen gas (if the cleaning temperature is higher than 45 ° C) The wafer should be washed first with isopropyl alcohol and then with deionized water).
  • the positive progress of the present invention is that the photoresist cleaning agent of the present invention contains a hydroxyl group-containing polyether surfactant.
  • the hydroxyl-containing polyether can increase the amount of quaternary ammonium hydroxide dissolved in the cleaning agent and the ability of the cleaning agent to wet the semiconductor wafer substrate.
  • the photoresist cleaning agent of the invention has good cleaning ability for photoresist (photoresist) and other residues on metal, metal alloy or dielectric substrate, and can remove ⁇ ⁇ on the semiconductor wafer from room temperature to 85 ° C.
  • the photoresist of thickness ⁇ has a good application prospect in the field of microelectronics such as semiconductor wafer cleaning. The effect will be further explained by comparative experiments in the examples.
  • Table 1 shows Examples 1 to 32 of the photoresist cleaning agent.
  • the raw materials and reagents used in the present invention are all commercially available products.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

L'invention concerne une composition de nettoyage pour éliminer un photorésist comprend une diméthylsulfone, un hydroxyde d'ammonium quaternaire. Elle est caractérisée par le fait qu'elle comprend en outre un agent tensio-actif, l'agent tensio-actif étant un polyéther à teneur en hydroxyle. La composition de nettoyage comprenant l'agent tensio-actif du polyéther à teneur en hydroxyle est utilisée pour nettoyer un photorésist sur un substrat métallique, d'alliage métallique ou diélectrique.
PCT/CN2007/003021 2006-10-27 2007-10-22 Composé de nettoyage pour éliminer un photorésist WO2008049332A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2007800374807A CN101523299A (zh) 2006-10-27 2007-10-22 一种光刻胶清洗剂

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2006101176675A CN101169597A (zh) 2006-10-27 2006-10-27 一种光刻胶清洗剂
CN200610117667.5 2006-10-27

Publications (1)

Publication Number Publication Date
WO2008049332A1 true WO2008049332A1 (fr) 2008-05-02

Family

ID=39324132

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/003021 WO2008049332A1 (fr) 2006-10-27 2007-10-22 Composé de nettoyage pour éliminer un photorésist

Country Status (2)

Country Link
CN (2) CN101169597A (fr)
WO (1) WO2008049332A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9033928B2 (en) 2008-03-03 2015-05-19 Covidien Lp Single port device with multi-lumen cap

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010135525A (ja) 2008-12-04 2010-06-17 Siltronic Ag 半導体ウエハの洗浄方法
CN101566804B (zh) * 2009-05-11 2011-06-15 绵阳艾萨斯电子材料有限公司 平板显示用显影液
CN102618900B (zh) * 2012-04-14 2016-12-14 烟台恒迪克能源科技有限公司 一种三极管表面处理液及其制备方法
CN103616805A (zh) * 2013-10-25 2014-03-05 青岛华仁技术孵化器有限公司 半导体制造过程中使用的清洗液
CN108803262A (zh) * 2018-07-03 2018-11-13 昆山欣谷微电子材料有限公司 一种酸性光刻胶剥离液

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680995A (ja) * 1992-08-31 1994-03-22 Asahi Chem Ind Co Ltd 低残渣洗浄剤
US5399285A (en) * 1992-10-30 1995-03-21 Diversey Corporation Non-chlorinated low alkalinity high retention cleaners
WO2004059700A2 (fr) * 2002-12-20 2004-07-15 Advanced Technology Materials, Inc. Élimination de photorésine
EP1544324A1 (fr) * 2002-08-19 2005-06-22 Merk-Kanto Advanced Chemical Ltd. Solution decapante

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0680995A (ja) * 1992-08-31 1994-03-22 Asahi Chem Ind Co Ltd 低残渣洗浄剤
US5399285A (en) * 1992-10-30 1995-03-21 Diversey Corporation Non-chlorinated low alkalinity high retention cleaners
EP1544324A1 (fr) * 2002-08-19 2005-06-22 Merk-Kanto Advanced Chemical Ltd. Solution decapante
WO2004059700A2 (fr) * 2002-12-20 2004-07-15 Advanced Technology Materials, Inc. Élimination de photorésine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9033928B2 (en) 2008-03-03 2015-05-19 Covidien Lp Single port device with multi-lumen cap
US9549759B2 (en) 2008-03-03 2017-01-24 Covidien Lp Single port device with multi-lumen cap

Also Published As

Publication number Publication date
CN101169597A (zh) 2008-04-30
CN101523299A (zh) 2009-09-02

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