CN101364056A - 一种光刻胶清洗剂 - Google Patents
一种光刻胶清洗剂 Download PDFInfo
- Publication number
- CN101364056A CN101364056A CNA2007100447903A CN200710044790A CN101364056A CN 101364056 A CN101364056 A CN 101364056A CN A2007100447903 A CNA2007100447903 A CN A2007100447903A CN 200710044790 A CN200710044790 A CN 200710044790A CN 101364056 A CN101364056 A CN 101364056A
- Authority
- CN
- China
- Prior art keywords
- out system
- photoresist
- content
- photoresist clean
- mass percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 59
- 239000003599 detergent Substances 0.000 title 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 36
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims description 26
- 238000005260 corrosion Methods 0.000 claims description 26
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims description 16
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- 239000012964 benzotriazole Substances 0.000 claims description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 5
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 claims description 4
- 150000008064 anhydrides Chemical class 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- 229960003742 phenol Drugs 0.000 claims description 4
- 150000002989 phenols Chemical group 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- FNJSWIPFHMKRAT-UHFFFAOYSA-N Monomethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(O)=O FNJSWIPFHMKRAT-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- 229960004050 aminobenzoic acid Drugs 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- PKHMTIRCAFTBDS-UHFFFAOYSA-N hexanoyl hexanoate Chemical compound CCCCCC(=O)OC(=O)CCCCC PKHMTIRCAFTBDS-UHFFFAOYSA-N 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 229960004194 lidocaine Drugs 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- LZXXNPOYQCLXRS-UHFFFAOYSA-N methyl 4-aminobenzoate Chemical compound COC(=O)C1=CC=C(N)C=C1 LZXXNPOYQCLXRS-UHFFFAOYSA-N 0.000 claims description 2
- FTDXCHCAMNRNNY-UHFFFAOYSA-N phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1 FTDXCHCAMNRNNY-UHFFFAOYSA-N 0.000 claims description 2
- 150000003008 phosphonic acid esters Chemical class 0.000 claims description 2
- 150000003009 phosphonic acids Chemical class 0.000 claims description 2
- 150000003016 phosphoric acids Chemical class 0.000 claims description 2
- 235000010388 propyl gallate Nutrition 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 28
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- -1 alcohol amine Chemical class 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000012459 cleaning agent Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 23
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 14
- 239000010949 copper Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000004005 microsphere Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100447903A CN101364056A (zh) | 2007-08-10 | 2007-08-10 | 一种光刻胶清洗剂 |
| PCT/CN2008/001437 WO2009021400A1 (fr) | 2007-08-10 | 2008-08-08 | Composition de nettoyage pour retirer une réserve |
| CN200880103488.3A CN101971103B (zh) | 2007-08-10 | 2008-08-08 | 一种光刻胶清洗剂 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100447903A CN101364056A (zh) | 2007-08-10 | 2007-08-10 | 一种光刻胶清洗剂 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101364056A true CN101364056A (zh) | 2009-02-11 |
Family
ID=40350360
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100447903A Pending CN101364056A (zh) | 2007-08-10 | 2007-08-10 | 一种光刻胶清洗剂 |
| CN200880103488.3A Expired - Fee Related CN101971103B (zh) | 2007-08-10 | 2008-08-08 | 一种光刻胶清洗剂 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880103488.3A Expired - Fee Related CN101971103B (zh) | 2007-08-10 | 2008-08-08 | 一种光刻胶清洗剂 |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101364056A (fr) |
| WO (1) | WO2009021400A1 (fr) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096345A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液及其清洗方法 |
| WO2012075686A1 (fr) * | 2010-12-10 | 2012-06-14 | 安集微电子（上海）有限公司 | Solution de décapant de résine photosensible en film épais |
| WO2012083587A1 (fr) * | 2010-12-21 | 2012-06-28 | 安集微电子（上海）有限公司 | Liquide de nettoyage pour photoréserves en couche épaisse |
| CN102540774A (zh) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗剂 |
| CN102566331A (zh) * | 2010-12-21 | 2012-07-11 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液 |
| CN102566332A (zh) * | 2010-12-30 | 2012-07-11 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液 |
| CN102566330A (zh) * | 2010-12-10 | 2012-07-11 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液 |
| CN102981376A (zh) * | 2011-09-05 | 2013-03-20 | 安集微电子（上海）有限公司 | 一种光刻胶清洗液 |
| CN103389627A (zh) * | 2012-05-11 | 2013-11-13 | 安集微电子科技(上海)有限公司 | 一种光刻胶清洗液 |
| CN103513520A (zh) * | 2013-09-24 | 2014-01-15 | 刘超 | 防腐剂混合物和光刻胶剥离剂组合物 |
| CN103529656A (zh) * | 2013-10-23 | 2014-01-22 | 杨桂望 | 包含咪唑啉缓蚀剂的感光膜清洗液 |
| CN103605269A (zh) * | 2013-10-25 | 2014-02-26 | 青岛华仁技术孵化器有限公司 | 用于半导体制造的新型光刻胶去除液 |
| CN103616805A (zh) * | 2013-10-25 | 2014-03-05 | 青岛华仁技术孵化器有限公司 | 半导体制造过程中使用的清洗液 |
| CN103616806A (zh) * | 2013-10-25 | 2014-03-05 | 青岛华仁技术孵化器有限公司 | 感光膜清洗液 |
| CN103809393A (zh) * | 2012-11-12 | 2014-05-21 | 安集微电子科技(上海)有限公司 | 一种去除光阻残留物的清洗液 |
| CN104531397A (zh) * | 2014-11-18 | 2015-04-22 | 惠晶显示科技（苏州）有限公司 | 一种平板玻璃基板减薄预清洗用清洗液及其应用 |
| CN104678719A (zh) * | 2013-11-28 | 2015-06-03 | 安集微电子科技(上海)有限公司 | 一种对金属极低腐蚀的光刻胶清洗液 |
| CN106367215A (zh) * | 2016-08-19 | 2017-02-01 | 广东泰强化工实业有限公司 | 一种气雾多功能清洗剂及其制备方法 |
| CN106919011A (zh) * | 2015-12-25 | 2017-07-04 | 安集微电子科技(上海)有限公司 | 一种富含水的羟胺剥离清洗液 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4169068A (en) * | 1976-08-20 | 1979-09-25 | Japan Synthetic Rubber Company Limited | Stripping liquor composition for removing photoresists comprising hydrogen peroxide |
| JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
| KR101017738B1 (ko) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | 포토레지스트 박리제 조성물 및 세정 조성물 |
| US7282324B2 (en) * | 2004-01-05 | 2007-10-16 | Microchem Corp. | Photoresist compositions, hardened forms thereof, hardened patterns thereof and metal patterns formed using them |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| CN1743965B (zh) * | 2005-09-30 | 2010-05-05 | 廊坊开发区普瑞特科工贸有限公司 | 剥离ps版油墨及感光胶的环保型剥离剂及其配制方法 |
| CN101187788A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子（上海）有限公司 | 低蚀刻性较厚光刻胶清洗液 |
-
2007
- 2007-08-10 CN CNA2007100447903A patent/CN101364056A/zh active Pending
-
2008
- 2008-08-08 WO PCT/CN2008/001437 patent/WO2009021400A1/fr active Application Filing
- 2008-08-08 CN CN200880103488.3A patent/CN101971103B/zh not_active Expired - Fee Related
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| CN102096345A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液及其清洗方法 |
| CN102566330B (zh) * | 2010-12-10 | 2016-04-20 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液 |
| WO2012075686A1 (fr) * | 2010-12-10 | 2012-06-14 | 安集微电子（上海）有限公司 | Solution de décapant de résine photosensible en film épais |
| CN102566330A (zh) * | 2010-12-10 | 2012-07-11 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗液 |
| WO2012083587A1 (fr) * | 2010-12-21 | 2012-06-28 | 安集微电子（上海）有限公司 | Liquide de nettoyage pour photoréserves en couche épaisse |
| CN102540774A (zh) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | 一种厚膜光刻胶清洗剂 |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2009021400A1 (fr) | 2009-02-19 |
| CN101971103A (zh) | 2011-02-09 |
| CN101971103B (zh) | 2013-02-13 |
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