KR20060117667A - 포토레지스트용 스트리퍼 조성물 - Google Patents
포토레지스트용 스트리퍼 조성물 Download PDFInfo
- Publication number
- KR20060117667A KR20060117667A KR1020050040115A KR20050040115A KR20060117667A KR 20060117667 A KR20060117667 A KR 20060117667A KR 1020050040115 A KR1020050040115 A KR 1020050040115A KR 20050040115 A KR20050040115 A KR 20050040115A KR 20060117667 A KR20060117667 A KR 20060117667A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- stripper composition
- compound
- formula
- stripper
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 109
- 239000000203 mixture Substances 0.000 title claims abstract description 104
- 238000005260 corrosion Methods 0.000 claims abstract description 70
- 230000007797 corrosion Effects 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 58
- -1 amine compound Chemical class 0.000 claims abstract description 49
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- 238000009835 boiling Methods 0.000 claims abstract description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 4
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims abstract description 3
- 239000003518 caustics Substances 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 26
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 25
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 20
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 16
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 13
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 13
- 239000003112 inhibitor Substances 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 13
- 239000003880 polar aprotic solvent Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000002736 nonionic surfactant Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 7
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 6
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 5
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 5
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- QZXIXSZVEYUCGM-UHFFFAOYSA-N 2-aminopropan-2-ol Chemical compound CC(C)(N)O QZXIXSZVEYUCGM-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- 229940043237 diethanolamine Drugs 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229960004418 trolamine Drugs 0.000 claims description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 claims description 2
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- 230000009977 dual effect Effects 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 2
- 125000001302 tertiary amino group Chemical group 0.000 claims description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 27
- 238000000206 photolithography Methods 0.000 abstract description 8
- 238000001039 wet etching Methods 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 239000000010 aprotic solvent Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 32
- 239000010949 copper Substances 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 21
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 150000001412 amines Chemical class 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 11
- 229910001092 metal group alloy Inorganic materials 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 229910021642 ultra pure water Inorganic materials 0.000 description 8
- 239000012498 ultrapure water Substances 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002443 hydroxylamines Chemical class 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- ATTRMYMZQWIZOR-RRKCRQDMSA-N 4-amino-1-[(2r,4s,5r)-4-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-6-methyl-1,3,5-triazin-2-one Chemical compound CC1=NC(N)=NC(=O)N1[C@@H]1O[C@H](CO)[C@@H](O)C1 ATTRMYMZQWIZOR-RRKCRQDMSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OZCRKDNRAAKDAN-HNQUOIGGSA-N (e)-but-1-ene-1,4-diol Chemical compound OCC\C=C\O OZCRKDNRAAKDAN-HNQUOIGGSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- LWUQALZULRYDPC-UHFFFAOYSA-N 2H-benzotriazole-4,5-diol Chemical compound OC1=CC=C2NN=NC2=C1O LWUQALZULRYDPC-UHFFFAOYSA-N 0.000 description 1
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- CETRZFQIITUQQL-UHFFFAOYSA-N dmso dimethylsulfoxide Chemical compound CS(C)=O.CS(C)=O CETRZFQIITUQQL-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- DQYBDCGIPTYXML-UHFFFAOYSA-N ethoxyethane;hydrate Chemical compound O.CCOCC DQYBDCGIPTYXML-UHFFFAOYSA-N 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- MBHINSULENHCMF-UHFFFAOYSA-N n,n-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 description 1
- GHVUKOCVBVUUGS-UHFFFAOYSA-N n-ethyl-n-methylpropanamide Chemical compound CCN(C)C(=O)CC GHVUKOCVBVUUGS-UHFFFAOYSA-N 0.000 description 1
- IHPHPGLJYCDONF-UHFFFAOYSA-N n-propylacetamide Chemical compound CCCNC(C)=O IHPHPGLJYCDONF-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- VWBWQOUWDOULQN-UHFFFAOYSA-N nmp n-methylpyrrolidone Chemical compound CN1CCCC1=O.CN1CCCC1=O VWBWQOUWDOULQN-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
- C09D9/005—Chemical paint or ink removers containing organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
- G03F7/343—Lamination or delamination methods or apparatus for photolitographic photosensitive material
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
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Abstract
Description
구분 | 수용성 유기아민 화합물 | 양자성 알킬렌글리콜 모노알킬에테르 화합물 | 극성 비양자성 용매 | 부식방지제 | 물 | 수용성 비이온성 계면활성제 | |||||
종류 | 양 | 종류 | 양 | 종류 | 양 | 종류 | 양 | ||||
실시예 | 1 | AEE | 10 | BDG | 59.3 | NMP | 30 | D1 | 0.2 | - | - |
2 | NMAE | 10 | BDG | 59.3 | NMP | 30 | D1 | 0.2 | - | - | |
3 | MEA | 10 | EDG | 38.8 | DMSO | 50 | D1 | 0.2 | - | - | |
4 | AIP | 10 | DPM | 58.9 | DMAc | 30 | D1 | 0.1 | - | - | |
5 | AEE | 5 | DPM | 54.5 | TMS | 40 | D1 | 0.4 | - | - | |
6 | AEE | 20 | EDG | 29.1 | DMSO | 50 | D1 | 0.2 | - | - | |
7 | NMAE | 20 | BDG | 49.1 | TMS | 30 | D1 | 0.2 | - | - | |
8 | MEA | 15 | BDG | 42.9 | NMP | 40 | D1 | 0.1 | - | - | |
9 | MEA | 20 | BDG | 36.9 | NMP | 40 | D1 | 0.1 | - | - | |
10 | MEA | 30 | BDG | 25.9 | DMAc | 40 | D1 | 0.1 | - | - | |
11 | AEE | 10 | BDG | 57.5 | DMAc | 30 | D1 | 2 | - | - | |
12 | NMAE | 10 | BDG | 57.4 | DMAc | 30 | D1 | 2 | - | 0.1 | |
13 | NMAE | 10 | DPM | 49.2 | DMAc | 30 | D1 | 0.2 | 10 | 0.1 | |
14 | AEE | 20 | DPM | 29.2 | DMAc | 30 | D1 | 0.2 | 20 | 0.1 | |
15 | AIP | 10 | DPM | 39.2 | NMP | 30 | D1 | 0.2 | 20 | 0.1 | |
16 | MEA | 15 | BDG | 53.3 | NMP | 30 | D1 | 0.2 | - | - | |
17 | AEE | 10 | BDG | 58.3 | NMP | 30 | D1 | 0.2 | - | - | |
비교예 | 1 | AEE | 10 | EDG | 59 | NMP | 30 | D2 | 1 | - | - |
2 | NMAE | 10 | BDG | 60 | NMP | 30 | D3 | 1 | - | - | |
3 | AEE | 20 | BDG | 47 | NMP | 30 | D2 | 3 | - | - | |
4 | MEA | 10 | BDG | 57 | NMP | 30 | D3 | 3 | - | - | |
5 | AEE | 10 | BDG | 60 | NMP | 30 | - | - | - | - | |
6 | NMAE | 10 | DPM | 49.4 | DMAc | 30 | D4 | 0.5 | 10 | 0.1 | |
7 | AEE | 20 | DPM | 29.4 | DMAc | 30 | D4 | 0.5 | 20 | 0.1 | |
[주] ·AEE : 2-(2-아미노에톡시)-1-에탄올 ·NMAE : N-메틸아미노에탄올 ·MEA : 모노에탄올아민 ·AIP : 1-아미노이소프로판올 ·BDG : 디에틸렌글리콜 모노부틸에테르 ·EDG : 디에틸렌글리콜 모노에틸에테르 ·DPM : 디프로필렌글리콜 모노메틸에테르 ·NMP : N-메틸피롤리돈 ·DMSO : 디메틸설폭사이드 ·DMAc : 디메틸아세트아마이드 ·TMS : 테트라메틸렌설폰 ·D1 : n-디에탄올아미노메틸디하이드록시벤조트라이졸 (화학식 1a의 화합물) ·D2 : 벤조트리아졸 ·D3 : 톨릴트리아졸(4-메틸벤조트리아졸과 5-메틸벤조트리아졸의 혼합물) ·D4 : 카테콜 ·수용성 비이온성 계면활성제 : |
평가기준 | |
◎ | 박리성능 우수 |
○ | 박리성능 양호 |
△ | 박리성능이 양호하지 못함 |
× | 박리성능 불량 |
평가기준 | |
◎ | Al/ND층, Mo층 표면과 측면에 부식이 전혀 없음 |
○ | Al/ND층, Mo층 표면과 측면에 약간의 부식 |
△ | Al/ND층, Mo층 표면과 측면에 부분적인 부식 |
× | Al/ND층, Mo층 표면과 측면에 전체적으로 심한 부식 |
평가기준 | |
◎ | Al/ND층, Mo층 표면과 측면에 부식이 전혀 없음 |
○ | Al/ND층, Mo층 표면과 측면에 약간의 부식 |
△ | Al/ND층, Mo층 표면과 측면에 부분적인 부식 |
× | Al/ND층, Mo층 표면과 측면에 전체적으로 심한 부식 |
평가기준 | |
◎ | Cu층, 이종금속합금층 표면과 측면에 부식이 전혀 없음 |
○ | Cu층, 이종금속합금층 표면과 측면에 약간의 부식 |
△ | Cu층, 이종금속합금층 표면과 측면에 부분적인 부식 |
× | Cu층, 이종금속합금층 표면과 측면에 전체적으로 심한 부식 |
평가기준 | |
◎ | Cu층, 이종금속합금층 표면과 측면에 부식이 전혀 없음 |
○ | Cu층, 이종금속합금층 표면과 측면에 약간의 부식 |
△ | Cu층, 이종금속합금층 표면과 측면에 부분적인 부식 |
× | Cu층, 이종금속합금층 표면과 측면에 전체적으로 심한 부식 |
구분 | 알루미늄 배선 | 구리 배선 | ||||
박리력 (70 ℃) | 부식평가 | 박리력 (70 ℃) | 부식평가 | |||
1 | 2 | 1 | 2 | |||
실시예 1 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 2 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 3 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 4 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 5 | ○ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 6 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 7 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 8 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 9 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 10 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 11 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 12 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 13 | ○ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 14 | ◎ | ◎ | ◎ | ○ | ◎ | ◎ |
실시예 15 | ◎ | ◎ | ◎ | ○ | ◎ | ◎ |
실시예 16 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
실시예 17 | ◎ | ◎ | ◎ | ◎ | ◎ | ◎ |
비교예 1 | ○ | × | × | ○ | × | × |
비교예 2 | ○ | × | × | ○ | △ | ○ |
비교예 3 | ◎ | × | × | △ | △ | ○ |
비교예 4 | ◎ | × | × | △ | ○ | ○ |
비교예 5 | ◎ | ○ | × | ○ | × | × |
비교예 6 | △ | ◎ | ◎ | ◎ | × | × |
비교예 7 | ◎ | ◎ | ○ | ○ | × | × |
Claims (17)
- 포토레지스트용 스트리퍼 조성물에 있어서,a) 수용성 유기 아민 화합물 5 내지 50 중량%;b) 비점이 적어도 150 ℃인 양자성 알킬렌글리콜 모노알킬에테르 화합물 20 내지 70 중량%;c) 극성 비양자성 용매 0.01 내지 70 중량%; 및d) 하기 화학식 1로 표시되는 화합물군으로부터 1 종 이상 선택되는 부식방지제 0.01 내지 5 중량%를 포함하는 것을 특징으로 하는 포토레지스트 스트리퍼 조성물:[화학식 1]상기 화학식 1의 식에서,R1, R2, R3, 및 R4는 각각 독립적으로 수소, 하이드록시기, 또는 탄소수 1 내지 4의 알킬기이고,R5 및 R6는 각각 독립적으로 탄소수 1 내지 4의 하이드록시알킬기이다.
- 제1항에 있어서,상기 a)의 수용성 유기 아민 화합물이 1차 아미노 알코올류 화합물, 2차 아미노 알코올류 화합물, 및 3차 아미노 알코올류 화합물로 이루어지는 아미노 알코올류 화합물군으로부터 1 종 이상 선택되는 것을 특징으로 하는 포토레지스트용 스트리퍼 조성물.
- 제2항에 있어서,상기 아미노 알코올류 화합물이 모노에탄올 아민(MEA), 1-아미노이소프로판올(AIP), 2-아미노-1-프로판올, N-메틸아미노에탄올(N-MAE), 3-아미노-1-프로판올, 4-아미노-1-부탄올, 2-(2-아미노에톡시)-1-에탄올(AEE), 2-(2-아미노에틸아미노)-1-에탄올, 디에탄올 아민(DEA), 및 트리에탄올 아민(TEA)으로 이루어지는 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 포토레지스트용 스트리퍼 조성물.
- 제1항에 있어서,상기 b)의 비점이 적어도 150 ℃인 양자성 알킬렌글리콜 모노알킬에테르 화합물이 디에틸렌글리콜 모노메틸에테르(메틸 카비톨, MDG), 디에틸렌글리콜 모노에틸에테르(에틸 카비톨, EDG), 디에틸렌글리콜 모노부틸에테르(부틸 카비톨, BDG), 디프로필렌글리콜 모노메틸에테르(DPM), 및 디프로필렌글리콜 모노에틸에테르(DPE)로 이루어지는 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 포토레지스트용 스트리퍼 조성물.
- 제1항에 있어서,상기 c)의 극성 비양자성 용매가 N-메틸피롤리돈(NMP), 1,3-디메틸-2-이미다졸리디논(DMI), 디메틸설폭사이드(DMSO), 디메틸아세트아마이드(DMAc), 디메틸포름아마이드(DMF), 및 테트라메틸설폰으로 이루어지는 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 포토레지스트용 스트리퍼 조성물.
- 제1항에 있어서,상기 스트리퍼 조성물이 e) 물 최대 30 중량%를 추가로 포함하는 것을 특징으로 하는 포토레지스트용 스트리퍼 조성물.
- 제1항에 있어서,상기 스트리퍼 조성물이 f) 수용성 비이온성 계면활성제 최대 1 중량%를 추가로 포함하는 것을 특징으로 하는 포토레지스트용 스트리퍼 조성물.
- 금속배선을 포함하는 기판상에 형성된 포토레지스트 패턴을 마스크로 에칭처리한 후, 제1항 기재의 포토레지스트용 스트리퍼 조성물로 박리하는 단계를 포함하는 것을 특징으로 하는 포토레지스트의 박리방법.
- 제10항에 있어서,상기 박리방법이 딥방식 또는 매엽방식인 것을 특징으로 하는 포토레지스트의 박리방법.
- 제10항에 있어서,상기 금속배선이 하부막으로 Al-Nd/Mo 이중막 또는 Cu/이종금속합금막을 포함하는 것을 특징으로 하는 포토레지스트의 박리방법.
- 제10항에 있어서,상기 포토레지스트가 포지형 포토레지스트, 네가형 포토레지스트, 또는 포지형/네가형 겸용 포토레지스트(dual tone photoresist)인 것을 특징으로 하는 포토레지스트의 박리방법.
- 제1항 기재의 포토레지스트용 스트리퍼 조성물을 이용하여 포토레지스트를 박리하는 단계를 포함하는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제14항 기재의 방법으로 제조되는 액정표시소자.
- 제1항 기재의 포토레지스트용 스트리퍼 조성물을 이용하여 포토레지스트를 박리하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제16항 기재의 방법으로 제조되는 반도체 소자.
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KR20140110767A (ko) * | 2013-03-07 | 2014-09-17 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
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KR20170040477A (ko) | 2015-10-05 | 2017-04-13 | 주식회사 이엔에프테크놀로지 | 포토레지스트 박리액 조성물 |
KR20170107351A (ko) | 2016-03-15 | 2017-09-25 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
KR20180024368A (ko) * | 2016-08-30 | 2018-03-08 | 주식회사 이엔에프테크놀로지 | 칼라필터용 박리액 조성물 |
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KR100544889B1 (ko) * | 2003-05-15 | 2006-01-24 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
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WO2014137173A1 (ko) * | 2013-03-07 | 2014-09-12 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
CN105487354A (zh) * | 2014-09-11 | 2016-04-13 | 东友精细化工有限公司 | 抗蚀剂剥离剂组合物 |
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WO2016043451A1 (ko) * | 2014-09-17 | 2016-03-24 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 |
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