CN101364056A - Detergent for photo resist - Google Patents
Detergent for photo resist Download PDFInfo
- Publication number
- CN101364056A CN101364056A CNA2007100447903A CN200710044790A CN101364056A CN 101364056 A CN101364056 A CN 101364056A CN A2007100447903 A CNA2007100447903 A CN A2007100447903A CN 200710044790 A CN200710044790 A CN 200710044790A CN 101364056 A CN101364056 A CN 101364056A
- Authority
- CN
- China
- Prior art keywords
- out system
- photoresist
- content
- photoresist clean
- mass percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 59
- 239000003599 detergent Substances 0.000 title 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 36
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims description 26
- 238000005260 corrosion Methods 0.000 claims description 26
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims description 16
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- 239000012964 benzotriazole Substances 0.000 claims description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 5
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 claims description 4
- 150000008064 anhydrides Chemical class 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- 229960003742 phenol Drugs 0.000 claims description 4
- 150000002989 phenols Chemical group 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- FNJSWIPFHMKRAT-UHFFFAOYSA-N Monomethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(O)=O FNJSWIPFHMKRAT-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- 229960004050 aminobenzoic acid Drugs 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- PKHMTIRCAFTBDS-UHFFFAOYSA-N hexanoyl hexanoate Chemical compound CCCCCC(=O)OC(=O)CCCCC PKHMTIRCAFTBDS-UHFFFAOYSA-N 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 229960004194 lidocaine Drugs 0.000 claims description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- LZXXNPOYQCLXRS-UHFFFAOYSA-N methyl 4-aminobenzoate Chemical compound COC(=O)C1=CC=C(N)C=C1 LZXXNPOYQCLXRS-UHFFFAOYSA-N 0.000 claims description 2
- FTDXCHCAMNRNNY-UHFFFAOYSA-N phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1 FTDXCHCAMNRNNY-UHFFFAOYSA-N 0.000 claims description 2
- 150000003008 phosphonic acid esters Chemical class 0.000 claims description 2
- 150000003009 phosphonic acids Chemical class 0.000 claims description 2
- 150000003016 phosphoric acids Chemical class 0.000 claims description 2
- 235000010388 propyl gallate Nutrition 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 28
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- -1 alcohol amine Chemical class 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000012459 cleaning agent Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 23
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 14
- 239000010949 copper Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000004005 microsphere Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a photoresist cleaning agent which comprises the following components: potassium hydroxide, dimethyl sulfoxide, pentaerythritol and alcohol amine. The photoresist cleaning agent can effectively remove the photoresist and other residues from a metal, metal alloy or dielectric substrate, has a low etching rate with regard to Cu and other metals and has good application prospect in the microelectronic fields such as semiconductor wafer cleaning.
Description
Technical field
The present invention relates to a kind of clean-out system in the semiconductor fabrication process, be specifically related to a kind of photoresist clean-out system.
Background technology
In common semiconductor fabrication process,, utilize wet method or dry etching to carry out figure transfer after the exposure by going up the mask that forms photoresist on surfaces such as silicon dioxide, Cu metals such as (copper) and low-k materials.Implant in the technology (bumping technology) at the wafer microballoon, also need photoresist (photoresist) to form mask, this mask needs to remove after microballoon is successfully implanted equally, but because this photoresist is thicker, often removes comparatively difficulty fully.Improving removal effect method comparatively commonly used is to adopt to prolong soak time, raising soaking temperature and adopt more to be rich in aggressive solution, but this regular meeting causes the corrosion of wafer substrate and the corrosion of microballoon, thereby causes the remarkable reduction of wafer yield.
Patent documentation WO2006/056298A1 utilizes by Tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO) (DMSO), and ethylene glycol (EG) and water are formed alkaline cleaner, are used to clean the photoresist of 50～100 micron thickness.This clean-out system does not have corrosion substantially to metallic copper.
Patent documentation US2204/0074519A1 utilizes and forms alkaline cleaner by benzyltrimethylammonium hydroxide (BTMAH), N-Methyl pyrrolidone (NMP), ethylene glycol (EG), corrosion inhibitor, surfactant and stabilizing agent, is used to clean thicker negative photoresist.
Patent documentation US6040117 utilizes by TMAH, dimethyl sulfoxide (DMSO) (DMSO), 1,3 '-dimethyl-2-imidazolidinone (DMI) and water etc. are formed alkaline cleaner, wafer is immersed in this clean-out system the thick film photolithography glue more than the 20 μ m that remove under 50～100 ℃ on metal and the dielectric substrate.
Patent documentation US5962197 utilizes the water composition alkaline cleaner of propylene glycol, pyrrolidone, KOH, surfactant and trace to be used for cleaning photoetching glue.
Patent documentation US5529887 utilizes diethylene glycol monoalky lether, ethylene glycol monoalkyl ether, alkali metal hydroxide, soluble fluoride and water to form alkaline cleaner, is used for cleaning photoetching glue.
Yet the cleansing power that above-mentioned cleaning fluid has is not strong, and the corrosion rate to base material copper that has is higher; Therefore developing the cleaning fluid that cleansing power is stronger, the corrosion rate of copper is lower seems particularly important.
Summary of the invention
Technical matters to be solved by this invention is for photoresist clean-out system that overcomes prior art or cleansing power deficiency, perhaps stronger problem to wafer substrate corrosivity, and provide a kind of cleansing power strong, especially can effectively remove thick film photolithography glue, wafer substrate is had lower corrosive photoresist clean-out system.
Photoresist clean-out system of the present invention contains: potassium hydroxide, dimethyl sulfoxide (DMSO), pentaerythrite and hydramine.
Wherein, what the content of described potassium hydroxide was preferable is mass percent 0.1～10%, and better is mass percent 0.1～3%; What the content of described dimethyl sulfoxide (DMSO) was preferable is mass percent 20～98.8%, mass percent 50～98.4%; What the content of described pentaerythrite was preferable is mass percent 1～40%, and better is mass percent 1～30%; What the content of described hydramine was preferable is mass percent 0.1～50%, and better is mass percent 0.5～30%.
Wherein, described hydramine is preferable be monoethanolamine, diethanolamine, triethanolamine, n-propanol amine,
In isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine one or more.
Described photoresist clean-out system of the present invention also can further contain corrosion inhibiter.The content of described corrosion inhibiter preferable for being less than or equal to mass percent 10%, better for being less than or equal to mass percent 3%.Described corrosion inhibiter is preferable is selected from phenols, carboxylic acids, carboxylic acid esters, 2-Mercapto base benzothiazoles, benzotriazole, anhydrides, phosphonic acids and the phosphonic acid ester corrosion inhibiter one or more.What described phenols was preferable is phenol, 1, one or more in 2-dihydroxy phenol, para hydroxybenzene phenol and the 1,2,3,-thrihydroxy-benzene; What carboxylic acids was preferable is benzoic acid and/or p-aminobenzoic acid; Carboxylic acid esters is preferable is in methyl p-aminobenzoate, phthalic acid, Methyl Benzene-o-dicarboxylate, gallic acid and the n-propyl gallate one or more; What benzotriazole was preferable is benzotriazole sylvite; Anhydrides is preferable is in acetic anhydride, caproic anhydride, maleic anhydride and the HPMA one or more; What the phosphoric acid class was preferable is 1,3-(hydroxyethyl)-2,4,6-tri methylene phosphonic acid.Wherein, best is benzotriazole sylvite.
Above-mentioned each composition is simply mixed, can make photoresist cleaning fluid of the present invention.Photoresist cleaning fluid of the present invention can use as follows: the semiconductor wafer that will contain photoresist immerses in the photoresist clean-out system of the present invention, after room temperature to 95 ℃ is soaked the suitable time down,, take out with behind the deionized water wash, dry up with high pure nitrogen again and get final product.
Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: pentaerythrite and hydramine contained in the photoresist clean-out system of the present invention can be used as dissolution with solvents potassium hydroxide; also can form layer protecting film, thereby reduce corrosion base material on the metal below metallic microspheres and the metallic microspheres (UBM) surface.And pentaerythrite also has the certain protection effect to metallic copper.Photoresist clean-out system of the present invention can effectively be removed photoresist (photoresistance) and other residue on metal, metal alloy or the dielectric substrate, also applicable to the cleaning of thicker (thickness is greater than 100 microns) photoresist, simultaneously have lower etch-rate, have a good application prospect at microelectronics such as semiconductor wafer cleanings for Cu metals such as (copper).
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～22
Table 1 has provided the prescription of embodiment 1～22, according to table 1 prescription each composition is simply mixed, and can make the photoresist cleaning fluid of each embodiment.
The photoresist cleaning fluid prescription of table 1 embodiment 1～22
Effect embodiment
Table 2 has provided the prescription of contrast photoresist cleaning fluid 1～3 and photoresist cleaning fluid 1～4 of the present invention, according to table 2 prescription each composition is simply mixed, and prepares each photoresist cleaning fluid.
The prescription of table 2 contrast photoresist cleaning fluid 1～3 and photoresist cleaning fluid 1～4 of the present invention
| Cleaning fluid | KOH content wt% | Dimethyl sulfoxide content wt% | Pentaerythrite content wt% | Hydramine and content wt% thereof | Corrosion inhibiter and content wt% thereof |
| Contrast 1 | 1.00 | 99.00 | \ | \ | \ |
| Contrast 2 | 1.00 | 91.00 | 8.00 | \ | \ |
| Contrast 3 | 1.00 | 91.00 | \ | Monoethanolamine, 8 | \ |
| 1 | 1.00 | 85.00 | 8.00 | Monoethanolamine, 6 | \ |
| 2 | 1.00 | 80.00 | 13.00 | Monoethanolamine, 6 | \ |
| 3 | 1.00 | 84.00 | 7.00 | Monoethanolamine, 7 | Methyl benzotriazazole, 1.00 |
| 4 | 3.00 | 56 | 20 | Monoethanolamine, 19 triethanolamines, 1 | Methyl benzotriazazole potassium, 1.00 |
Contrast photoresist cleaning fluid 1 can not form uniform solution, illustrates that the solubleness of KOH in dimethyl sulfoxide is less.Contrast photoresist cleaning fluid 2 and 3 can form uniform solution, shows that adding pentaerythrite or hydramine can improve the solubleness of KOH in system.
The semiconductor wafer that will contain 120 microns photoresist immerses respectively in contrast photoresist cleaning fluid 2～3 and the photoresist cleaning fluid 1～4 of the present invention, presses condition immersion in the table 3, takes out with behind the deionized water wash, dries up with high pure nitrogen to get final product again.
Table 3 contrast photoresist cleaning fluid 1～3 and 1～4 pair of wafer of photoresist cleaning fluid of the present invention clean situation
| Embodiment | Operating conditions | Photoresistance is removed | The corrosion situation of copper | Metallic microspheres corrosion situation |
| Contrast 2 | 85℃，120min | Fully | Be suppressed | Corrosion is arranged |
| Contrast 3 | 85℃，120min | Fully | Corrosion is arranged | Be suppressed |
| 1 | 65℃，120min | Fully | Be suppressed, but comparison is slightly poorer than 2 | Be suppressed |
| 2 | 65℃，120min | Fully | Be suppressed | Be suppressed |
| 3 | 65℃，120min | Fully | Further be suppressed | Be suppressed |
| 4 | 45℃，120min | Fully | Further be suppressed | Be suppressed |
As can be seen from Table 3, contain alkali and pentaerythrite but not contain the corrosion of 2 pairs of metallic microspheres of contrast photoresist cleaning fluid of hydramine heavier, contain alkali and hydramine but not contain the corrosion of 3 pairs of copper of contrast photoresist cleaning fluid of pentaerythrite heavier, and photoresist cleaning fluid of the present invention contains alkali, hydramine and pentaerythrite, and copper and metallic microspheres are had the obvious corrosion inhibiting effect.In addition, can find out the effect of corrosion inhibition that hydramine has metallic microspheres by photoresist cleaning fluid of the present invention and contrast photoresist cleaning fluid 2; But hydramine add the increasing the weight of of corrosion that affiliation causes Cu; So need on the consumption of KOH, hydramine and pentaerythrite, to make appropriate balance.
Claims (15)
1. a photoresist clean-out system is characterized in that containing: potassium hydroxide, dimethyl sulfoxide (DMSO), pentaerythrite and hydramine.
2. photoresist clean-out system as claimed in claim 1 is characterized in that: the content of described potassium hydroxide is mass percent 0.1～10%.
3. photoresist clean-out system as claimed in claim 2 is characterized in that: the content of described potassium hydroxide is mass percent 0.1～3%.
4. photoresist clean-out system as claimed in claim 1 is characterized in that: the content of described dimethyl sulfoxide (DMSO) is mass percent 20～98.8%.
5. photoresist clean-out system as claimed in claim 4 is characterized in that: the content of described dimethyl sulfoxide (DMSO) is mass percent 50～98.4%.
6. photoresist clean-out system as claimed in claim 1 is characterized in that: the content of described pentaerythrite is mass percent 1～40%.
7. photoresist clean-out system as claimed in claim 6 is characterized in that: the content of described pentaerythrite is mass percent 1～30%.
8. photoresist clean-out system as claimed in claim 1 is characterized in that: described hydramine is one or more in monoethanolamine, diethanolamine, triethanolamine, n-propanol amine, isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine.
9. photoresist clean-out system as claimed in claim 1 is characterized in that: the content of described hydramine is mass percent 0.1～50%.
10. photoresist clean-out system as claimed in claim 9 is characterized in that: the content of described hydramine is mass percent 0.5～30%.
11. photoresist clean-out system as claimed in claim 1 is characterized in that: described photoresist clean-out system also contains corrosion inhibiter.
12. photoresist clean-out system as claimed in claim 11 is characterized in that: described corrosion inhibiter is phenols, carboxylic acids, carboxylic acid esters, 2-
In base benzothiazoles, benzotriazole, anhydrides, phosphonic acids and the phosphonic acid ester corrosion inhibiter one or more.
13. photoresist clean-out system as claimed in claim 12 is characterized in that: described phenols is a phenol, 1, one or more in 2-dihydroxy phenol, para hydroxybenzene phenol and the 1,2,3,-thrihydroxy-benzene; Described carboxylic acids is benzoic acid and/or p-aminobenzoic acid; Described carboxylic acid esters is one or more in methyl p-aminobenzoate, phthalic acid, Methyl Benzene-o-dicarboxylate, gallic acid and the n-propyl gallate; Described benzotriazole is a benzotriazole sylvite; Described anhydrides is one or more in acetic anhydride, caproic anhydride, maleic anhydride and the HPMA; Described phosphoric acid class is 1,3-(hydroxyethyl)-2,4,6-tri methylene phosphonic acid.
14. photoresist clean-out system as claimed in claim 11 is characterized in that: the content of described corrosion inhibiter is for being less than or equal to mass percent 10%.
15. photoresist clean-out system as claimed in claim 14 is characterized in that: the content of described corrosion inhibiter is for being less than or equal to mass percent 3%.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100447903A CN101364056A (en) | 2007-08-10 | 2007-08-10 | Detergent for photo resist |
| CN200880103488.3A CN101971103B (en) | 2007-08-10 | 2008-08-08 | Cleaning composition for removing resist |
| PCT/CN2008/001437 WO2009021400A1 (en) | 2007-08-10 | 2008-08-08 | Cleaning composition for removing resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100447903A CN101364056A (en) | 2007-08-10 | 2007-08-10 | Detergent for photo resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101364056A true CN101364056A (en) | 2009-02-11 |
Family
ID=40350360
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100447903A Pending CN101364056A (en) | 2007-08-10 | 2007-08-10 | Detergent for photo resist |
| CN200880103488.3A Expired - Fee Related CN101971103B (en) | 2007-08-10 | 2008-08-08 | Cleaning composition for removing resist |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880103488.3A Expired - Fee Related CN101971103B (en) | 2007-08-10 | 2008-08-08 | Cleaning composition for removing resist |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101364056A (en) |
| WO (1) | WO2009021400A1 (en) |
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| JP2911792B2 (en) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | Stripper composition for resist |
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2008
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- 2008-08-08 CN CN200880103488.3A patent/CN101971103B/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101971103A (en) | 2011-02-09 |
| WO2009021400A1 (en) | 2009-02-19 |
| CN101971103B (en) | 2013-02-13 |
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