CN102981376A - Photoresist cleaning solution - Google Patents
Photoresist cleaning solution Download PDFInfo
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- CN102981376A CN102981376A CN2011102596097A CN201110259609A CN102981376A CN 102981376 A CN102981376 A CN 102981376A CN 2011102596097 A CN2011102596097 A CN 2011102596097A CN 201110259609 A CN201110259609 A CN 201110259609A CN 102981376 A CN102981376 A CN 102981376A
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Abstract
The invention discloses a low etching photoresist cleaning solution and composition thereof. The low etching photoresist cleaning solution comprises (a) potassium hydroxide, (b) amino alcohol, (c) tetramethylolmethane, (d) xylitol and (e) other auxiliary solvents. The low etching photoresist cleaning solution can remove the photoresist on semiconductor wafers effectively, without influencing substrates such as metallic aluminium, metallic copper and the like. The low etching photoresist cleaning solution has good application prospects in the field of the cleaning of the semiconductor wafers and the like.
Description
Technical field
The present invention relates to a kind of photoresist cleaning fluid.
Background technology
In common semiconductor fabrication process, by form the mask of photoresist on the surface of some materials, carry out figure after the exposure and shift, after obtaining the figure that needs, carry out need to peelling off residual photoresist before the next process.In this process, require to remove fully unwanted photoresist, can not corrode any base material simultaneously.
At present, the photoresist cleaning fluid mainly is comprised of polar organic solvent, highly basic and/or water etc., by immersing semiconductor wafer in the cleaning fluid or utilizing cleaning fluid flushing semiconductor wafer, removes the photoresist on the semiconductor wafer.Disclose a kind of cleaning fluid such as JP1998239865, its composition is Tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO) (DMSO), 1,3 '-dimethyl-2-imidazolidinone (DMI) and water.Wafer is immersed in this cleaning fluid the photoresist more than the 20 μ m that remove under 50～100 ℃ on metal and the dielectric substrate; Its corrosion to the semiconductor wafer base material is slightly high, and can not remove the photoresist on the semiconductor wafer fully, and cleansing power is not enough; US5529887 forms alkaline cleaning fluid by potassium hydroxide (KOH), alkylene glycol monoalkyl ether, soluble fluoride and water etc., wafer is immersed in this cleaning fluid, at the thick film photolithography glue of removing under 40～90 ℃ on metal and the dielectric substrate.Its corrosion to the semiconductor wafer base material is higher; US5091103 discloses 1-METHYLPYRROLIDONE, 1, the cleaning fluid of 2-propylene glycol and Tetramethylammonium hydroxide, in 105～125 ℃ of lower photoresists that cured (hard bake) through high temperature of removing, it is characterized in that not containing water, operating temperature height, in case cleaning fluid is sneaked into water, it all rises to metallic aluminium and copper corrosion speed.
This shows that seeking more, establishment metal erosion inhibition method is that such photoresist cleaning fluid is made great efforts improved privileged direction with efficient photoresist removal ability.
Summary of the invention
The technical problem to be solved in the present invention is exactly that the cleansing power that exists for existing photoresist cleaning fluid is not enough or to wafer pattern and the stronger defective of base material corrosivity, and provides a kind of photoresist cleansing power strong and to semiconductor wafer pattern and the lower photoresist clean-out system of base material corrosivity.
The present invention solves the problems of the technologies described above the technical scheme that adopts: a kind of cleaning fluid for the photoresist cleaning, this cleaning fluid comprises (a) potassium hydroxide, (b) amine alcohol, (c) pentaerythrite, (d) xylitol, (e) other cosolvent.
Wherein, the mass percentage content of described potassium hydroxide is 0.1～10%; The mass percentage content of described hydramine is 5～40%; The mass percentage content of described pentaerythrite is 0.1-15%; The mass percentage content of described xylitol is 0.1～10%, and described other cosolvent is surplus.
Preferably, the mass percentage content of described potassium hydroxide is 0.1～5%; The mass percentage content of described hydramine is 10-35%; The mass percentage content of described pentaerythrite is 0.1-15%; The mass percentage content of described xylitol is 0.1～5%, and described other cosolvent is surplus.
Hydramine described in the present invention is one or more in monoethanolamine, diethanolamine, triethanolamine, n-propanol amine, isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine.Having of hydramine is beneficial to raising potassium hydroxide and the solubleness of pentaerythrite in system.
The present invention can also further contain cosolvent, and described cosolvent can be selected from one or more in sulfoxide, sulfone, imidazolidinone, imidazolone, pyrrolidone, alcohol ether, the acid amides.What wherein, described sulfoxide was better is dimethyl sulfoxide (DMSO); What described sulfone was better is sulfolane; What described imidazolidinone was better is 1,3-dimethyl-2-imidazolidinone; What described imidazolone was better is DMI; What described pyrrolidone was better is 1-METHYLPYRROLIDONE, N-ethyl pyrrolidone, NHP and N-cyclohexyl pyrrolidone; What described acid amides was better is dimethyl formamide, dimethyl acetamide; What described alcohol ether was better is glycol ether and propylene glycol; What described glycol ether was better is diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether; What described propylene glycol was better is dipropylene glycol monomethyl ether, DPE.
Low etching property photoresist cleaning fluid among the present invention can be at room temperature to 90 ℃ lower cleaning photoetching glue.Concrete grammar is as follows: the wafer that will contain photoresist immerses the photoresist clean-out system of the low etching property among the present invention,, dries up with high pure nitrogen after the taking-up washing after ℃ time that lower immersion is suitable in room temperature to 90.
The invention has the beneficial effects as follows:
1) adopted hydramine as dissolution with solvents potassium hydroxide and pentaerythrite, it is strong that photoresist is removed ability;
2) metallic aluminium and copper are had stronger corrosion inhibition ability simultaneously, strong to metal and nonmetallic corrosion inhibition ability;
3) operating temperature is gentle, 25 ℃～90 ℃, has larger action pane.
Embodiment
Further set forth the present invention below by embodiment.
The component of the clean-out system of table 1 embodiment 1～20 and content
In order further to investigate the cleaning situation of this based cleaning liquid, the present invention has adopted following technological means: (thickness is about 20 microns to be about to contain positive photoresist, and through overexposure and etching) wafer immerse in the clean-out system, under 25～90 ℃, utilize constant temperature oscillator with about 60 rev/mins vibration frequency vibration 5～60 minutes, then after the deionized water washing, dry up with high pure nitrogen.The cleaning performance of photoresist and cleaning fluid are as shown in table 2 to the corrosion condition of wafer.
The wafer cleaning situation of table 2. comparative example and part embodiment
Corrosion condition: ◎ no corrosion; The cleaning situation: ◎ removes fully;
Zero slightly corrosion; Zero is a small amount of remaining;
The △ moderate corrosion; The more remnants of △;
* heavy corrosion.* abundant residues.
As can be seen from Table 2, cleaning fluid of the present invention has good cleaning performance to photoresist, and the serviceability temperature scope is wide, simultaneously metal and non-metal base plate etc. is had the preferably effect of corrosion inhibition.
To sum up, cleaning fluid of the present invention has photoresist to remove ability strong; Strong to metal and nonmetallic corrosion inhibition ability; Has larger action pane.
Claims (7)
1. photoresist cleaning fluid, this cleaning fluid comprises: potassium hydroxide, amine alcohol, pentaerythrite, xylitol and other cosolvent.
2. cleaning fluid as claimed in claim 1 is characterized in that the mass percentage content of described potassium hydroxide is 0.1～10%; The mass percentage content of described hydramine is 5～40%; The mass percentage content of described pentaerythrite is 0.1-15%; The mass percentage content of described xylitol is 0.1～10%, and described other cosolvent is surplus.
3. cleaning fluid as claimed in claim 2 is characterized in that the mass percentage content of described potassium hydroxide is 0.1～5%; The mass percentage content of described hydramine is 10-35%; The mass percentage content of described pentaerythrite is 0.1-15%; The mass percentage content of described xylitol is 0.1～5%, and described other cosolvent is surplus.
4. cleaning fluid as claimed in claim 1 is characterized in that described hydramine is one or more in monoethanolamine, diethanolamine, triethanolamine, n-propanol amine, isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine.
5. cleaning fluid as claimed in claim 1 is characterized in that described cosolvent is selected from one or more in sulfoxide, sulfone, imidazolidinone, imidazolone, pyrrolidone, alcohol ether, the acid amides.
6. cleaning fluid as claimed in claim 5 is characterized in that described sulfoxide is dimethyl sulfoxide (DMSO); Described sulfone is sulfolane; Described imidazolidinone is 1,3-dimethyl-2-imidazolidinone; Described imidazolone is DMI; Described pyrrolidone is one or more in 1-METHYLPYRROLIDONE, N-ethyl pyrrolidone, NHP and the N-cyclohexyl pyrrolidone; Described acid amides is dimethyl formamide and/or dimethyl acetamide; Described alcohol ether is glycol ether and/or propylene glycol.
7. cleaning fluid as claimed in claim 6 is characterized in that described glycol ether is one or more in diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, the diethylene glycol monobutyl ether; Described propylene glycol is dipropylene glycol monomethyl ether and/or DPE.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102596097A CN102981376A (en) | 2011-09-05 | 2011-09-05 | Photoresist cleaning solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102596097A CN102981376A (en) | 2011-09-05 | 2011-09-05 | Photoresist cleaning solution |
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| Publication Number | Publication Date |
|---|---|
| CN102981376A true CN102981376A (en) | 2013-03-20 |
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| CN2011102596097A Pending CN102981376A (en) | 2011-09-05 | 2011-09-05 | Photoresist cleaning solution |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103242985A (en) * | 2013-04-03 | 2013-08-14 | 云南北方奥雷德光电科技股份有限公司 | Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process |
| CN103529656A (en) * | 2013-10-23 | 2014-01-22 | 杨桂望 | Imidazoline inhibitor containing photosensitive film cleaning solution |
| CN103543619A (en) * | 2013-09-29 | 2014-01-29 | 杨桂望 | Anticorrosive agent composition comprising imidazoline |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050197265A1 (en) * | 2004-03-03 | 2005-09-08 | Rath Melissa K. | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| CN101364056A (en) * | 2007-08-10 | 2009-02-11 | 安集微电子（上海）有限公司 | Detergent for photo resist |
| WO2009062397A1 (en) * | 2007-11-02 | 2009-05-22 | Anji Microelectronics (Shanghai) Co., Ltd | Corrosion inhibitor for semiconductor chip metal substrate and use method thereof |
| CN101848987A (en) * | 2007-09-14 | 2010-09-29 | 三洋化成工业株式会社 | Cleaning agent for electronic material |
| CN102141743A (en) * | 2010-08-25 | 2011-08-03 | 上海飞凯光电材料股份有限公司 | Photoresist peeling solution composition with metal protection |
-
2011
- 2011-09-05 CN CN2011102596097A patent/CN102981376A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050197265A1 (en) * | 2004-03-03 | 2005-09-08 | Rath Melissa K. | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| CN101364056A (en) * | 2007-08-10 | 2009-02-11 | 安集微电子（上海）有限公司 | Detergent for photo resist |
| CN101848987A (en) * | 2007-09-14 | 2010-09-29 | 三洋化成工业株式会社 | Cleaning agent for electronic material |
| WO2009062397A1 (en) * | 2007-11-02 | 2009-05-22 | Anji Microelectronics (Shanghai) Co., Ltd | Corrosion inhibitor for semiconductor chip metal substrate and use method thereof |
| CN102141743A (en) * | 2010-08-25 | 2011-08-03 | 上海飞凯光电材料股份有限公司 | Photoresist peeling solution composition with metal protection |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103242985A (en) * | 2013-04-03 | 2013-08-14 | 云南北方奥雷德光电科技股份有限公司 | Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process |
| CN103242985B (en) * | 2013-04-03 | 2014-07-30 | 云南北方奥雷德光电科技股份有限公司 | Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process |
| CN103543619A (en) * | 2013-09-29 | 2014-01-29 | 杨桂望 | Anticorrosive agent composition comprising imidazoline |
| CN103529656A (en) * | 2013-10-23 | 2014-01-22 | 杨桂望 | Imidazoline inhibitor containing photosensitive film cleaning solution |
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Application publication date: 20130320 |