CN112470079A - Cleaning method - Google Patents
Cleaning method Download PDFInfo
- Publication number
- CN112470079A CN112470079A CN201980049478.4A CN201980049478A CN112470079A CN 112470079 A CN112470079 A CN 112470079A CN 201980049478 A CN201980049478 A CN 201980049478A CN 112470079 A CN112470079 A CN 112470079A
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- mass
- cleaning agent
- agent composition
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- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 87
- 239000000203 mixture Substances 0.000 claims abstract description 158
- 239000011347 resin Substances 0.000 claims abstract description 141
- 229920005989 resin Polymers 0.000 claims abstract description 141
- 239000012459 cleaning agent Substances 0.000 claims abstract description 124
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000003960 organic solvent Substances 0.000 claims abstract description 36
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims description 70
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 38
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 30
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 24
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 claims description 24
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 24
- ZRSNZINYAWTAHE-UHFFFAOYSA-N p-methoxybenzaldehyde Chemical compound COC1=CC=C(C=O)C=C1 ZRSNZINYAWTAHE-UHFFFAOYSA-N 0.000 claims description 24
- 235000002639 sodium chloride Nutrition 0.000 claims description 24
- GNKZMNRKLCTJAY-UHFFFAOYSA-N 4'-Methylacetophenone Chemical compound CC(=O)C1=CC=C(C)C=C1 GNKZMNRKLCTJAY-UHFFFAOYSA-N 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 20
- -1 nitrogen-containing compound Chemical class 0.000 claims description 19
- 238000011161 development Methods 0.000 claims description 16
- 150000003839 salts Chemical class 0.000 claims description 16
- GFISDBXSWQMOND-UHFFFAOYSA-N 2,5-dimethoxyoxolane Chemical compound COC1CCC(OC)O1 GFISDBXSWQMOND-UHFFFAOYSA-N 0.000 claims description 15
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 15
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 claims description 12
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 12
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 12
- SKTCDJAMAYNROS-UHFFFAOYSA-N methoxycyclopentane Chemical compound COC1CCCC1 SKTCDJAMAYNROS-UHFFFAOYSA-N 0.000 claims description 12
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 claims description 12
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 claims description 12
- KRIOVPPHQSLHCZ-UHFFFAOYSA-N propiophenone Chemical compound CCC(=O)C1=CC=CC=C1 KRIOVPPHQSLHCZ-UHFFFAOYSA-N 0.000 claims description 12
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 11
- 150000007522 mineralic acids Chemical class 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- PKZJLOCLABXVMC-UHFFFAOYSA-N 2-Methoxybenzaldehyde Chemical compound COC1=CC=CC=C1C=O PKZJLOCLABXVMC-UHFFFAOYSA-N 0.000 claims description 8
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 8
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 8
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- FLJPGEWQYJVDPF-UHFFFAOYSA-L caesium sulfate Chemical compound [Cs+].[Cs+].[O-]S([O-])(=O)=O FLJPGEWQYJVDPF-UHFFFAOYSA-L 0.000 claims description 8
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 8
- 235000011152 sodium sulphate Nutrition 0.000 claims description 8
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 claims description 6
- 235000019270 ammonium chloride Nutrition 0.000 claims description 4
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 4
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 4
- 239000001103 potassium chloride Substances 0.000 claims description 4
- 235000011164 potassium chloride Nutrition 0.000 claims description 4
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 4
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 4
- 235000011151 potassium sulphates Nutrition 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 239000006210 lotion Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 36
- 239000000243 solution Substances 0.000 description 26
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 18
- 239000003599 detergent Substances 0.000 description 18
- 238000007747 plating Methods 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 238000012360 testing method Methods 0.000 description 10
- 238000004065 wastewater treatment Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 235000010724 Wisteria floribunda Nutrition 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 125000001453 quaternary ammonium group Chemical group 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 5
- 239000000908 ammonium hydroxide Substances 0.000 description 5
- 150000003863 ammonium salts Chemical class 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 235000011007 phosphoric acid Nutrition 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229940043276 diisopropanolamine Drugs 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 238000012851 eutrophication Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 150000007529 inorganic bases Chemical class 0.000 description 4
- 239000013067 intermediate product Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 150000003016 phosphoric acids Chemical class 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 description 4
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 3
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 3
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 150000007530 organic bases Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229940102253 isopropanolamine Drugs 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002964 rayon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- ARHYWWAJZDAYDJ-UHFFFAOYSA-N 1,2-dimethylpiperazine Chemical compound CC1CNCCN1C ARHYWWAJZDAYDJ-UHFFFAOYSA-N 0.000 description 1
- CWKVFRNCODQPDB-UHFFFAOYSA-N 1-(2-aminoethylamino)propan-2-ol Chemical compound CC(O)CNCCN CWKVFRNCODQPDB-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- XKQMKMVTDKYWOX-UHFFFAOYSA-N 1-[2-hydroxypropyl(methyl)amino]propan-2-ol Chemical compound CC(O)CN(C)CC(C)O XKQMKMVTDKYWOX-UHFFFAOYSA-N 0.000 description 1
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- SHAMRMCOVNDTCS-UHFFFAOYSA-M 2-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)C[N+](C)(C)C SHAMRMCOVNDTCS-UHFFFAOYSA-M 0.000 description 1
- YSDSJBOULHYPCB-UHFFFAOYSA-M 2-hydroxypropyl(tripropyl)azanium hydroxide Chemical compound [OH-].OC(C[N+](CCC)(CCC)CCC)C YSDSJBOULHYPCB-UHFFFAOYSA-M 0.000 description 1
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
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- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 1
- IUEJJWYUYRJJBJ-UHFFFAOYSA-M bis(2-hydroxyethyl)-dipropylazanium hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCO)CCO IUEJJWYUYRJJBJ-UHFFFAOYSA-M 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
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- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
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- MYRLVAHFNOAIAI-UHFFFAOYSA-M diethyl-bis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CC)CCO MYRLVAHFNOAIAI-UHFFFAOYSA-M 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
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- XBRDBODLCHKXHI-UHFFFAOYSA-N epolamine Chemical compound OCCN1CCCC1 XBRDBODLCHKXHI-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- KGVNNTSVYGJCRV-UHFFFAOYSA-M ethyl-tris(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CCO)CCO KGVNNTSVYGJCRV-UHFFFAOYSA-M 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
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- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005185 salting out Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- RSIJVJUOQBWMIM-UHFFFAOYSA-L sodium sulfate decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].[O-]S([O-])(=O)=O RSIJVJUOQBWMIM-UHFFFAOYSA-L 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 1
- MSSZNJYLEVGNAK-UHFFFAOYSA-M tetrakis(2-hydroxypropyl)azanium;hydroxide Chemical compound [OH-].CC(O)C[N+](CC(C)O)(CC(C)O)CC(C)O MSSZNJYLEVGNAK-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- RBUVMOSJYGXQEK-UHFFFAOYSA-M triethyl(2-hydroxypropyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC(C)O RBUVMOSJYGXQEK-UHFFFAOYSA-M 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- FQSMVJXSANYLPV-UHFFFAOYSA-M tris(2-hydroxyethyl)-propylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCO)(CCO)CCO FQSMVJXSANYLPV-UHFFFAOYSA-M 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The present invention provides, in one embodiment, a cleaning method having excellent resin mask removal performance. The present invention relates to a cleaning method including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using a cleaning agent composition, and the cleaning methodThe lotion composition contains an alkaline agent (component A), an organic solvent (component B) and water (component C), wherein the hansen solubility parameter of component B has coordinates of 5.45MPa radius centered on δ d-18.3, δ p-6.8 and δ h-3.70.5The conductive property of the cleaning agent composition is 11S/m or more.
Description
Technical Field
The present invention relates to a cleaning agent composition for resin mask peeling, a cleaning method using the same, and a method for manufacturing an electronic component.
Background
In recent years, in personal computers and various electronic devices, power consumption is reduced, processing speed is increased, and miniaturization of wiring of package substrates and the like mounted thereon has been advanced year by year. While metal mask methods have been mainly used for forming such fine wiring and connection terminals such as pillars and bumps, they have low versatility and have been difficult to cope with miniaturization of wiring and the like, and therefore, the development of other new methods has been advanced.
As a new method, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. The resin mask is finally peeled off and removed, and at this time, an alkaline cleaning agent for peeling is used.
As such a cleaning agent for stripping, for example, international publication No. 2008/071078 (patent document 1) describes a low-etching photoresist cleaning agent characterized by containing a quaternary ammonium hydroxide, a specific alkylene glycol aryl ether or a derivative thereof, and (C) acetophenone or a derivative thereof.
U.S. Pat. No. 5185235 (patent document 2) describes a photoresist stripping solution essentially comprising (a) 35 to 80 mass% of an aliphatic alcohol solvent, (B) 10 to 40 mass% of an organic solvent selected from halogen hydrocarbon solvents and non-hydroxylated ether solvents, and (C) 0.1 to 25 mass% of a quaternary ammonium salt.
U.S. patent application publication No. 2014/0155310 (patent document 3) describes a solution containing dimethyl sulfoxide, quaternary ammonium hydroxide, a specific alkanolamine, and a2 nd solvent containing an alcohol, a polyol or a combination thereof, and having a water content of 3 mass% or less.
International publication No. 2008/039730 (patent document 4) describes a quasi-aqueous composition for use in the reprocessing of microelectronic devices, which contains at least 1 alkali and/or alkaline earth metal base, at least 1 organic solvent, and water.
Disclosure of Invention
The present invention relates, in one aspect, to a cleaning methodThe method comprises a step of peeling off a resin mask from an object to be cleaned to which the resin mask is attached by using a cleaning agent composition containing an alkaline agent (component A), an organic solvent (component B) and water (component C), wherein the coordinates of Hansen solubility parameters of the component B are radii of 5.45MPa with δ d being 18.3, δ p being 6.8 and δ h being 3.7 as the center0.5The conductive property of the cleaning agent composition is 11S/m or more.
Detailed Description
After forming fine wiring on a printed board or the like, a high cleaning property is required for the cleaning agent composition in order to reduce the residue of a resin mask and also reduce the residue of an auxiliary agent or the like contained in solder, a plating solution or the like used for forming fine wiring or bumps. The resin mask is formed using a resist whose physical properties such as solubility in a developer change due to light, electron beams, or the like.
Resists are broadly classified into negative type and positive type according to a reaction method with light or electron beams. Negative resists have the property of decreasing solubility in a developer during exposure, and a layer containing a negative resist (hereinafter also referred to as a "negative resist layer") is used as a resin mask in an exposed portion after exposure and development treatment. A positive resist has a characteristic that solubility in a developer increases during exposure, and a layer containing a positive resist (hereinafter also referred to as a "positive resist layer") is exposed and developed, and then the exposed portion is removed, and the unexposed portion is used as a resin mask. By using a resin mask having such characteristics, a fine connection portion of a circuit board such as a metal wiring, a metal pillar, or a solder bump can be formed.
However, the characteristics of the resin mask change due to plating treatment, heating treatment, or the like used in forming these connecting portions, and the resin mask tends to be difficult to remove in a cleaning step in the next step. In particular, since the negative resist has a characteristic of being cured by a reaction with light or an electron beam, a resin mask formed using the negative resist is excessively cured by plating treatment, heat treatment, or the like used in forming a connection portion, and thus cannot be completely removed in a cleaning process, or a substrate or a metal surface is damaged due to a very long time required for removal. Such a resin mask subjected to plating treatment and/or heat treatment is not easily removed, and therefore, high resin mask removability is required for the cleaning agent composition.
On the other hand, miniaturization of wiring is advancing in order to achieve miniaturization of electronic devices, high processing speed, and reduction in power consumption. If the wiring width is narrowed, the resistance increases, heat is generated, and the function of the electronic device may be degraded. In order to reduce the resistance without increasing the area of the wiring board, a measure for increasing the height of the wiring is taken. Therefore, the resin mask used for forming the wiring becomes thick, the contact area with the wiring increases, and further the wiring interval becomes narrow with miniaturization, and thus the resin mask becomes difficult to remove. In particular, although low-wavelength light having high energy is used for drawing fine wiring, the distance from the surface of the resin mask to the substrate becomes long due to the thickness of the resin mask, the reaction rate of photopolymerization by exposure varies between the surface and the substrate contact surface, the reaction on the surface proceeds excessively, and if the permeation is not enhanced, the cleaning agent composition does not permeate from the surface of the resin mask, and the resin mask is not easily removed.
Accordingly, the present invention provides a cleaning method having excellent resin mask removability and a cleaning agent composition for resin mask peeling.
In one embodiment, the present invention relates to a cleaning method (hereinafter, also referred to as "the cleaning method of the present invention") including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached, using a cleaning agent composition (hereinafter, also referred to as "the cleaning agent composition of the present invention") containing an alkaline agent (component a), an organic solvent (component B), and water (component C), wherein the hansen solubility parameter of component B has coordinates of a radius of 5.45MPa centered around δ d-18.3, δ p-6.8, and δ h-3.70.5The conductive property of the cleaning agent composition is 11S/m or more.
The present invention relates to a method for manufacturing an electronic component, including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached, by using the cleaning method of the present invention.
In one embodiment, the present invention relates to a cleaning agent composition for resin mask peeling, which contains an alkaline agent (component a), an organic solvent (component B), water (component C), and a salt of an inorganic acid (component D) other than component a, wherein the hansen solubility parameter of component B has coordinates of a radius of 5.45MPa centered on δ D-18.3, δ p-6.8, and δ h-3.70.5Within the sphere of (1).
The present invention relates to a kit for producing the cleanser composition of the present invention, the kit comprising, in an immiscible state: the solution containing the component a (the 1 st liquid), the solution containing the component B (the 2 nd liquid), and the solution containing the component D (the 3 rd liquid), at least one selected from the 1 st liquid, the 2 nd liquid, and the 3 rd liquid further contains a part or all of the component C, and the 1 st liquid, the 2 nd liquid, and the 3 rd liquid are mixed at the time of use.
According to one embodiment of the present invention, a cleaning method having excellent resin mask removal performance can be provided. Therefore, the cleaning method of the present invention can efficiently remove the resin mask, particularly the resin mask subjected to the plating treatment and/or the heating treatment. Further, by using the cleaning method of the present invention, high-quality electronic components can be obtained with high yield. Further, by using the cleaning method of the present invention, an electronic component having a fine wiring pattern can be efficiently manufactured.
The details of the mechanism of action of the effect in the cleaning method of the present invention are not known, but are presumed as follows.
It is generally considered that the peeling of the resin mask is caused by the interfacial stress caused by the permeation of the components of the cleaning agent composition into the resin mask and the swelling of the resin mask. In the cleaning method of the present invention, it is considered that the resin mask is impregnated with the alkali agent (component a), the specific organic solvent (component B) and the water (component C) in the cleaning agent composition of the present invention, whereby dissociation of the alkali-soluble resin incorporated in the resin mask is promoted, and further, charge repulsion is caused, whereby the peeling of the resin mask is promoted. In this case, it is presumed that when a specific organic solvent (component B) acts on the interface between the substrate surface and the resin mask and the interface between the wiring and the resin mask, the adhesion between the substrate and the resin is reduced, the peeling of the resin mask is further promoted, and the resin mask removability is remarkably improved. It is also presumed that a specific organic solvent (component B) acts on the unreacted monomer in the resin mask, and from this, the alkali agent (component a) and water (component C) are impregnated into the resin mask, whereby the peeling of the resin mask is promoted, and the resin mask removability is significantly improved. Further, it is considered that when the conductivity of the cleaning agent composition of the present invention, which is an index of the salt concentration, is set to 11S/m or more, the solubility of the component B in water is lowered by the salting-out action, and therefore the component B acts on the resin mask with high efficiency, and the penetration of the alkaline agent (component a) and water (component C) into the resin mask is promoted, whereby the resin mask can be removed with higher efficiency. It is considered that this enables a fine circuit (wiring pattern) to be formed on a substrate efficiently with high cleanliness.
However, the present invention can be explained without being limited to this mechanism.
In recent years, a cleaning agent composition is required to have high resin mask removability, and on the other hand, a substrate containing an organic resin such as an epoxy resin or a phenol resin (hereinafter also referred to as "organic resin-containing substrate") is desired to have little influence. The reason for this is that: if the substrate surface is dissolved or otherwise altered by the cleaning agent composition, the performance of the substrate required as an electronic component is lowered, and a high-quality substrate cannot be obtained.
On the other hand, when the electrical conductivity of the cleaning agent composition of the present invention is 11S/m or more as described above, the solubility of the component B in water is lowered, and the component B acts on the resin mask with high efficiency even at a low concentration. Therefore, the organic matter content in the cleaning agent composition of the present invention can be reduced, and the influence on the substrate containing an organic resin can be reduced.
Further, the progress of electronization has been progressing in various fields, and the production amount of printed boards and the like has been increasing, and the amount of the cleaning agent composition used also tends to be increasing. Further, as the amount of the detergent composition used increases, the load of wastewater treatment by waste liquid such as a detergent composition and rinse water, and eutrophication of lakes and marshes due to inflow of waste liquid also increase. Therefore, a cleaning agent composition which has a small wastewater treatment load, does not contain nitrogen and phosphorus which cause eutrophication of lakes and marshes, and can efficiently remove a resin mask has been desired.
Furthermore, a stripping-based aqueous cleaning composition in which the removed resin mask is easily removed from the cleaning solution through a net or the like is advantageous in order to efficiently reuse the cleaning solution, and a cleaning composition having a small organic content is desired. However, in the method described in the above patent document, it is difficult to achieve both high resin mask removability and low drainage processing load.
On the other hand, when the electrical conductivity of the cleaning agent composition of the present invention is 11S/m or more as described above, the solubility of the component B in water is lowered, and the component B acts on the resin mask with high efficiency even at a low concentration. Therefore, the organic matter content in the cleaning agent composition of the present invention can be reduced, and an increase in the load of wastewater treatment can be suppressed.
In the present invention, the resin mask is a mask for protecting the surface of a substance from etching, plating, heating, or other treatment, that is, a mask functioning as a protective film. As the resin mask, in one or more embodiments, there may be mentioned: a resist layer after the exposure and development step, a resist layer after at least one of exposure and development (hereinafter, also referred to as "subjected to exposure and/or development treatment"), or a cured resist layer. In one or more embodiments, the resin material for forming the resin mask may be a photosensitive resin film or a resist film. As the resist film, a general-purpose resist film can be used.
(cleaning agent composition)
[ conductivity ]
In one or more embodiments, the cleaning agent composition of the present invention has a conductivity of preferably 11S/m or more, more preferably 20S/m or less, and still more preferably 15S/m or less, from the viewpoint of improving the releasability of the resin mask. In the present invention, the electrical conductivity is at 25 ℃ and can be measured by the measurement method shown in the examples. The conductivity can be adjusted so that the conductivity becomes 11S/m or more by the contents of the component A, the component B and the component C, or can be adjusted by further adding a compound which is dissolved in water and is ionically dissociated. Examples of the compound that is dissolved in water and ionically dissociated include: various acids, bases, salts of inorganic acids, salts of organic acids, ionic liquids, and the like are preferable, and from the viewpoint of reducing the load of wastewater treatment, salts of inorganic acids (hereinafter also referred to as "component D") are preferable.
Therefore, one embodiment of the detergent composition of the present invention is a detergent composition containing a component a, a component B, and a component C, wherein the hansen solubility parameter of the component B has coordinates of a radius of 5.45MPa centered around δ d-18.3, δ p-6.8, and δ h-3.70.5The conductive property of the cleaning agent composition is 11S/m or more. Another embodiment of the detergent composition of the present invention is a detergent composition containing a component a, a component B, a component C, and a component D, wherein the hansen solubility parameter of the component B has coordinates of a radius of 5.45MPa centered around δ D18.3, δ p 6.8, and δ h 3.70.5Within the sphere of (1).
[ component A: alkaline agent
The cleaning agent composition of the present invention contains an alkaline agent (component a) in one or more embodiments. The component A may be used in 1 type or in combination of 2 or more types.
The component A may be at least 1 selected from inorganic bases and organic bases, for example. From the viewpoint of reducing the load of wastewater treatment, an inorganic base is preferred.
Examples of the inorganic base include: sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate, potassium silicate, and the like. Among these, from the viewpoint of improving the resin mask removability, a combination of 1 or 2 or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate and potassium carbonate is preferable, at least one of sodium hydroxide and potassium hydroxide is more preferable, and potassium hydroxide is even more preferable.
Examples of the organic base include a quaternary ammonium hydroxide represented by the following formula (I) and an amine represented by the following formula (II).
[ solution 1]
In the above formula (I), R1、R2、R3And R4Each independently is at least 1 selected from the group consisting of methyl, ethyl, propyl, hydroxymethyl, hydroxyethyl, and hydroxypropyl.
[ solution 2]
In the above formula (II), R5Represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, R6Is at least 1 selected from hydrogen atom, hydroxyethyl group, hydroxypropyl group, methyl group or ethyl group, R7Is at least 1 selected from aminoethyl, hydroxyethyl or hydroxypropyl, or in formula (II), R5Is at least 1 selected from methyl, ethyl, aminoethyl, hydroxyethyl or hydroxypropyl, R6And R7Bonded to each other to form a pyrrolidine ring or a piperazine ring together with the N atom in formula (II).
Examples of the quaternary ammonium hydroxide represented by the formula (I) include salts containing a quaternary ammonium cation and a hydroxide group. Specific examples of the quaternary ammonium hydroxide include those selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis (2-hydroxyethyl) ammonium hydroxide, diethylbis (2-hydroxyethyl) ammonium hydroxide, dipropylbis (2-hydroxyethyl) ammonium hydroxide, tris (2-hydroxyethyl) methylammonium hydroxide, tris (2-hydroxyethyl) ethylammonium hydroxide, tris (2-hydroxyethyl) propylammonium hydroxide, tetrakis (2-hydroxyethyl) ammonium hydroxide and tetrakis (2-hydroxypropyl) ammonium hydroxide At least 1.
Examples of the amine represented by the formula (II) include alkanolamines, primary to tertiary amines, and heterocyclic compounds. Specific examples of amines include those selected from the group consisting of monoethanolamine, monoisopropanolamine, N-methyl monoethanolamine, N-methyl isopropanolamine, N-ethyl monoethanolamine, N-ethyl isopropanolamine, diethanolamine, diisopropanolamine, N-dimethyl monoethanolamine, N-dimethyl monoisopropanolamine, N-methyl diethanolamine, N-methyl diisopropanolamine, N-diethyl monoethanolamine, N-diethyl monoisopropanolamine, N-ethyl diethanolamine, N-ethyl diisopropanolamine, N- (. beta. -aminoethyl) ethanolamine, N- (. beta. -aminoethyl) isopropanolamine, N- (. beta. -aminoethyl) diethanolamine, N- (. beta. -aminoethyl) diisopropanolamine, 1-methylpiperazine, N- (beta. -aminoethyl) diisopropanolamine, N- (beta-aminoethyl) isopropanolamine, N- (methyl-1-methylpiperazine, N-methyl isopropanolamine, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl) piperazine, ethylenediamine and diethylenetriamine.
The content of the component a in the cleaning agent composition of the present invention in use is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, further preferably 1% by mass or more, and further preferably 2% by mass or more from the viewpoint of improving the resin mask removability, and is preferably 5% by mass or less, more preferably 4% by mass or less, further preferably 3.5% by mass or less, and further preferably 3% by mass or less from the viewpoint of improving the resin mask removability. More specifically, the content of the component a in the detergent composition of the present invention during use is preferably 0.1% by mass or more and 5% by mass or less, more preferably 0.5% by mass or more and 4% by mass or less, still more preferably 1% by mass or more and 3.5% by mass or less, and still more preferably 2% by mass or more and 3% by mass or less. When the component a contains 2 or more alkaline agents, the content of the component a means the total content thereof.
In the present invention, "the content of each component of the detergent composition at the time of use" means the content of each component at the time of cleaning, that is, at the time when the detergent composition is started to be used for cleaning.
[ component B: organic solvent ]
The cleaning agent composition of the present invention contains an organic solvent (component B) in one or more embodiments. The component B may be used in 1 kind or in combination of 2 or more kinds.
In the present invention, the componentsThe coordinates of the hansen solubility parameter of B are a radius of 5.45MPa centered at δ d-18.3, δ p-6.8, δ h-3.70.5Within the sphere of (1). From the viewpoint of improving the resin mask removability, the coordinates of the hansen solubility parameter of the component B are preferably 5.42MPa in radius centered around δ d-18.3, δ p-6.8, δ h-3.70.5More preferably a radius of 5.38MPa, in the range of0.5In the range of (1), a radius of 4.00MPa is more preferable0.5Within the sphere of (1). The cleaning agent composition of the present invention may contain an organic solvent other than the organic solvent (component B) having the coordinates of hansen solubility parameter within the above range. For example, when the cleaning agent composition of the present invention contains 2 or more organic solvents (hereinafter, also referred to as "mixed organic solvents"), the hansen solubility parameter of the whole mixed organic solvent may not fall within the above range, and the effect of the present invention can be exhibited if the mixed organic solvent contains at least 1 organic solvent (component B) having the hansen solubility parameter within the above range.
Here, Hansen solubility parameter (hereinafter also referred to as "HSP") is a value published by Charles m.hansen in 1967 for predicting the solubility of a substance, and is a parameter based on the theory that 2 substances having similar intermolecular interactions are easily dissolved into each other. HSP consists of 3 parameters (units: MPa) of0.5) And (4) forming.
δ d: energy based on intermolecular dispersion force
δ p: energy based on intermolecular dipolar interaction
δ h: energy based on intermolecular hydrogen bonding
These 3 parameters can be considered as coordinates in a three-dimensional space (hansen space), and when 2 HSP substances are placed in hansen space, the closer the distance between the 2 points is, the easier the two are to dissolve each other. Detailed descriptions are given in chemical industry No. 3/2010 (chemical industry corporation), etc., and the "HSPiP: hansen Solubility Parameters of various substances were obtained by Hansen Solubility Parameters in Practice, etc. The invention uses the software for the computer, namely HSPiP: hansen Solubility Parameters obtained from Hansen Solubility Parameters in Practice ". In the case where the component B is a mixed organic solvent of 2 or more species, the distance of HSP as the mixed organic solvent may be "HSPiP: HSP calculation function of mixed organic solvents of Hansen Solubility Parameters in Practice' was calculated.
The coordinates of HSP of component B in the present invention can be expressed as follows. That is, the coordinates of HSP of component B are expressed as (δ d)B、δpB、δhB) The coordinates (. delta.d) of HSP of component BB、δpB、δhB) Distances from the component coordinate X (δ d ═ 18.3, δ p ═ 6.8, δ h ═ 3.7) (unit: MPa of0.5) The following formula can be satisfied.
Distance [ (δ d)B－18.3)2+(δpB－6.8)2+(δhB－3.7)2]0.5
≤5.45MPa0.5
The component B is not particularly limited as long as the distance between the HSP coordinate of the component B and the component coordinate X satisfies the above formula, and examples thereof include acetophenone (distance: 2.44 MPa)0.5) Propiophenone (distance: 0.65MPa0.5) P-anisaldehyde (distance: 5.15MPa0.5) O-anisaldehyde (distance: 2.43MPa0.5) P-methylacetophenone (distance: 1.23MPa0.5) Tetrahydrofuran (distance: 5.36MPa0.5) Dimethoxytetrahydrofuran (distance: 5.42MPa0.5) Methoxycyclopentane (distance: 4.10MPa0.5) Diphenyl ether (distance: 3.83MPa0.5) Anisole (distance: 4.12MPa0.5) Phenetole (distance: 2.33MPa0.5) Diethylene glycol diethyl ether (distance: 5.42MPa0.5) Dipropylene glycol dimethyl ether (distance: 5.44MPa0.5) Cyclohexanone (distance: 2.35MPa0.5) 2-octanone (distance: 4.73MPa0.5) And benzaldehyde (distance: 2.79MPa0.5) 1 or a combination of 2 or more thereof. Among these, the component B is preferably selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylphenylethylaldehyde in one or more embodiments from the viewpoint of improving the resin mask removabilityA combination of 1 or 2 or more selected from ketone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde, more preferably a combination of 1 or 2 or more selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, diethylene glycol diethyl ether, cyclohexanone and benzaldehyde, still more preferably a combination of 1 or 2 or more selected from acetophenone, tetrahydrofuran, dimethoxytetrahydrofuran and diethylene glycol diethyl ether, and still more preferably acetophenone. From the same viewpoint, in one or more other embodiments, the component B is preferably at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, cyclohexanone, and benzaldehyde. The numerical value in parentheses represents the distance (unit: MPa) between the HSP coordinate of component B and the component coordinate X0.5)。
From the viewpoint of reducing the risk of fire due to ignition and durability, component B in the present invention preferably has a high boiling point. For example, the boiling point of the component B is preferably 160 ℃ or higher, more preferably 200 ℃ or higher.
In the present invention, the solubility of the component B in water is preferably high from the viewpoint of concentration, and for example, the solubility of the component B in 100mL of water is preferably 0.3g or more.
The content of the component B in the cleaning agent composition of the present invention in use is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, further preferably 0.5% by mass or more, and further preferably 1% by mass or more from the viewpoint of improving the resin mask removability, and is preferably 10% by mass or less, more preferably 7% by mass or less, further preferably 5% by mass or less, and further preferably 4% by mass or less from the viewpoint of reducing the load of drainage treatment and the influence on the substrate containing an organic resin. More specifically, the content of the component B in use is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.3% by mass or more and 7% by mass or less, further preferably 0.5% by mass or more and 5% by mass or less, and further preferably 1% by mass or more and 4% by mass or less in one or more embodiments. When the component B contains 2 or more organic solvents, the content of the component B means the total content thereof. The content of the component B in use is preferably 0.1 mass% or more and 5 mass% or less in the other embodiment or embodiments.
When the cleaning agent composition of the present invention contains a mixed organic solvent, the content of the mixed organic solvent in the use of the cleaning agent composition of the present invention is preferably 1 mass% or more, more preferably 2 mass% or more, and further preferably 4 mass% or more from the viewpoint of improving the resin mask removability, and is preferably 20 mass% or less, more preferably 15 mass% or less, and further preferably 10 mass% or less from the viewpoint of reducing the load of the drainage treatment and the influence on the substrate containing the organic resin. More specifically, the content of the mixed organic solvent is preferably 1% by mass or more and 20% by mass or less, more preferably 2% by mass or more and 15% by mass or less, and further preferably 4% by mass or more and 10% by mass or less.
When the cleaning agent composition of the present invention contains the mixed organic solvent, the content of the component B in the mixed organic solvent is preferably 10% by mass or more, more preferably 20% by mass or more, and further preferably 30% by mass or more, and from the same viewpoint, preferably 90% by mass or less, more preferably 85% by mass or less, and further preferably 80% by mass or less, from the viewpoint of improving the resin mask removability. More specifically, the content of the component B in the mixed organic solvent is preferably 10% by mass or more and 90% by mass or less, more preferably 20% by mass or more and 85% by mass or less, and further preferably 30% by mass or more and 80% by mass or less.
The mass ratio (a/B) of the component a to the component B in the cleaning agent composition of the present invention is preferably 0.05 or more, more preferably 0.1 or more, further preferably 0.5 or more, and further preferably 0.8 or more, from the viewpoint of reducing the load of wastewater treatment and reducing the influence on the substrate containing an organic resin, and is preferably 20 or less, more preferably 10 or less, further preferably 5 or less, and further preferably 3 or less from the viewpoint of improving the resin mask removability. More specifically, the mass ratio (a/B) is preferably 0.05 or more and 20 or less, more preferably 0.1 or more and 10 or less, still more preferably 0.5 or more and 5 or less, and still more preferably 0.8 or more and 3 or less.
[ component C: water ]
The cleaning agent composition of the present invention contains water (component C) in one or more embodiments. Examples of water as component C include: ion exchange water, RO water, distilled water, pure water, ultrapure water, and the like.
The content of the component C in the cleaning agent composition of the present invention may be the remaining amount excluding the component a, the component B and any of the following components. Specifically, the content of the component C in the cleaning agent composition of the present invention is preferably 60 mass% or more, more preferably 70 mass% or more, and even more preferably 75 mass% or more, in use, from the viewpoint of improving the resin mask removability, reducing the load of drainage treatment, and reducing the influence on the substrate containing an organic resin, and is preferably 95 mass% or less from the viewpoint of improving the resin mask removability. More specifically, the content of the component C in the detergent composition of the present invention during use is preferably 60% by mass or more and 95% by mass or less, more preferably 70% by mass or more and 95% by mass or less, and still more preferably 75% by mass or more and 95% by mass or less.
The mass ratio B/C of the component B to the component C in the cleaning agent composition of the present invention is preferably 0.01 or more, more preferably 0.02 or more, from the viewpoint of improving the resin mask removability, and is preferably 0.06 or less, more preferably 0.04 or less from the same viewpoint. More specifically, the mass ratio B/C is preferably 0.01 or more and 0.06 or less, and more preferably 0.02 or more and 0.04 or less.
[ component D: salts of inorganic acids ]
The cleaning agent composition of the present invention may further contain a salt of an inorganic acid (component D) other than component a in one or more embodiments.
Examples of the component D include alkali metal salts, alkaline earth metal salts, ammonium salts, quaternary ammonium salts, and the like of at least 1 acid selected from sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, carbonic acid, silicic acid, and boric acid. Among these, from the viewpoint of improving the resin mask removability, an alkali metal salt or an ammonium salt is preferable, at least 1 kind selected from sodium sulfate, cesium sulfate, potassium sulfate, ammonium sulfate, sodium chloride, potassium chloride, and ammonium chloride is more preferable, and sodium sulfate is further preferable.
The content of the component D in the cleaning composition of the present invention in use is preferably 0.1% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, further preferably 5% by mass or more, further preferably 10% by mass or more, from the viewpoint of improving the resin mask removability, and is preferably 30% by mass or less, more preferably 25% by mass or less, further preferably 20% by mass or less, further preferably 15% by mass or less from the viewpoint of suppressing precipitation of an excessive amount of a salt of an inorganic acid and keeping the cleaning composition uniform. More specifically, the content of the component D in use is preferably 1% by mass or more and 30% by mass or less, more preferably 3% by mass or more and 25% by mass or less, further preferably 5% by mass or more and 20% by mass or less, and further preferably 10% by mass or more and 15% by mass or less in one or more embodiments. The content of the component D in use is preferably 0.1 mass% or more and 30 mass% or less, and more preferably 0.1 mass% or more and 20 mass% or less in the other embodiment or embodiments. When the component D contains 2 or more kinds of salts of inorganic acids, the content of the component D means the total content thereof.
The mass ratio D/C of the component D to the component C in the cleaning agent composition of the present invention is preferably 0.02 or more, more preferably 0.1 or more, and even more preferably 0.15 or more, from the viewpoint of improving the resin mask removability, and is preferably 0.6 or less, more preferably 0.3 or less, and even more preferably 0.2 or less from the same viewpoint. More specifically, the mass ratio D/C is preferably 0.02 or more and 0.6 or less, more preferably 0.1 or more and 0.3 or less, and further preferably 0.15 or more and 0.2 or less.
[ other ingredients ]
The cleaning agent composition of the present invention may further contain other components as necessary in addition to the components A to D. Examples of the other components include those that can be used in a general cleaning agent, and examples thereof include: organic solvents other than component B, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, high molecular compounds, cosolvents, antioxidants, preservatives, antifoaming agents, antibacterial agents, and the like. The content of the other component in the cleaning agent composition of the present invention in use is preferably 0 mass% or more and 2.0 mass% or less, more preferably 0 mass% or more and 1.5 mass% or less, still more preferably 0 mass% or more and 1.3 mass% or less, and still more preferably 0 mass% or more and 1.0 mass% or less.
The total content of organic substances derived from the component a, the component B, and any component in the cleaning agent composition of the present invention at the time of use is preferably 15% by mass or less, more preferably 10% by mass or less, further preferably 5% by mass or less, further preferably 4% by mass or less, further preferably 3% by mass or less, and is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, further preferably 0.5% by mass or more, and further preferably 1% by mass or more from the viewpoint of improving the resin mask removability, from the viewpoint of reducing the load of wastewater treatment and reducing the influence on the substrate containing an organic resin. More specifically, the total content of organic substances derived from the component a, the component B, and any component in the cleaning agent composition of the present invention at the time of use is preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.3% by mass or more and 10% by mass or less, further preferably 0.5% by mass or more and 5% by mass or less, further preferably 1% by mass or more and 4% by mass or less, and further preferably 1% by mass or more and 3% by mass or less in one or more embodiments. The total content of organic substances derived from the component a, the component B, and any component in the cleaning agent composition of the present invention at the time of use is preferably 0.5 mass% or more and 15 mass% or less in another embodiment or embodiments.
From the viewpoint of reducing the load of wastewater treatment and suppressing eutrophication of the wastewater region, the cleaning agent composition of the present invention preferably contains substantially no nitrogen-containing compound or phosphorus-containing compound. In the present invention, "substantially no nitrogen-containing compound and phosphorus-containing compound" means that the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning agent composition of the present invention is less than 0.1% by mass. From the viewpoint of reducing the load of wastewater treatment and suppressing eutrophication of the wastewater region, the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning agent composition of the present invention is preferably 0.05% by mass or less, more preferably 0.01% by mass or less, and still more preferably 0% by mass.
Examples of the nitrogen-containing compound include nitrogen-containing compounds which have been conventionally widely used as cleaning agent compositions, and examples thereof include combinations of at least 1 or 2 or more selected from amines and salts thereof, ammonia, and ammonium salts. Examples of the amine include aminoalcohols such as monoethanolamine and diethanolamine. Examples of the ammonium salt include quaternary ammonium salts such as tetramethylammonium hydroxide (TMAH).
Examples of the phosphorus-containing compound include phosphorus-containing compounds which have been conventionally widely used as a cleaning agent composition, and examples thereof include inorganic phosphoric acids selected from phosphoric acids and salts thereof, condensed phosphoric acids such as pyrophosphoric acid, polyphosphoric acid, metaphosphoric acid, and salts thereof, and combinations of at least 1 or 2 or more of organic phosphoric acids and phosphoric acid esters.
[ method for producing detergent composition ]
The cleaning agent composition of the present invention can be produced by mixing the above-mentioned components A to C and, if necessary, the above-mentioned optional components (component D and other components) by a known method in one or more embodiments. For example, the cleaning agent composition of the present invention may be prepared by blending at least the components A to C. Accordingly, the present invention relates to a method for producing a cleaning agent composition, which comprises a step of blending at least the components a to C. In the present invention, "blending" includes mixing the components a to C and, if necessary, the above-mentioned arbitrary components at the same time or in an arbitrary order. In the method for producing the detergent composition of the present invention, the preferred amounts of the respective components may be the same as the preferred amounts of the respective components of the detergent composition of the present invention.
The cleaning agent composition of the present invention may be prepared as a concentrate in which the amount of water of component C is reduced within a range where the storage stability is not impaired by separation, precipitation, or the like. The concentrate of the cleaning agent composition is preferably a concentrate having a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and is preferably a concentrate having a dilution ratio of 30 times or less from the viewpoint of storage stability. The concentrate of the cleaning agent composition can be diluted with water at the time of use so that the contents of the components a to C and any component(s) are as described above (i.e., the content at the time of cleaning). Further, the concentrate of the cleaning agent composition may be used by adding each component separately at the time of use. In the present invention, "at the time of use" or "at the time of cleaning" of the detergent composition of the concentrated liquid refers to a state in which a concentrate of the detergent composition is diluted.
[ subject to be cleaned ]
The cleaning agent composition of the present invention can be used for cleaning an object to be cleaned to which a resin mask is attached in one or more embodiments.
Examples of the object to be cleaned include an electronic component and an intermediate product for manufacturing the same. Examples of the electronic component include at least one member selected from metal plates such as a printed circuit board, a wafer, a copper plate, and an aluminum plate. The intermediate product is an intermediate product in the production process of the electronic component, and includes an intermediate product after a resin mask process. Specific examples of the object to be cleaned to which the resin mask is attached include an electronic component in which a wiring, a connection terminal, and the like are formed on a surface of a substrate through a step of performing a process such as soldering, plating (copper plating, aluminum plating, nickel plating, and the like) using the resin mask.
Accordingly, the present invention relates, in one aspect, to the use of the cleaning agent composition of the present invention as a cleaning agent in the production of electronic parts.
In one or more embodiments, the cleaning agent composition of the present invention can be suitably used for cleaning an object to be cleaned to which a resin mask is attached or to which a resin mask subjected to a plating treatment and/or a heating treatment is attached, from the viewpoint of cleaning effect. The resin mask may be, for example, a negative resin mask or a positive resin mask, and is preferably a negative resin mask in view of the ease of exhibiting the effects of the present invention. Examples of the negative resin mask include negative dry film resists subjected to exposure and/or development treatment. In the present invention, the negative resin mask is a mask formed using a negative resist, and examples thereof include a negative resist layer subjected to exposure and/or development treatment. In the present invention, the positive resin mask refers to a mask formed using a positive resist, and includes, for example, a positive resist layer subjected to exposure and/or development treatment.
In one or more embodiments, the cleaning method of the present invention includes a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached, using the cleaning agent composition of the present invention. In the cleaning method of the present invention, the step of peeling the resin mask from the object to be cleaned includes, in one or more embodiments, an operation of bringing the object to be cleaned to which the resin mask is attached into contact with the cleaning agent composition of the present invention.
Examples of the method for peeling a resin mask from an object to be cleaned using the cleaning agent composition of the present invention or the method for bringing the cleaning agent composition of the present invention into contact with an object to be cleaned include: a method of bringing the cleaning composition into contact with the substrate by immersing the substrate in a cleaning bath containing the cleaning composition, a method of bringing the cleaning composition into contact by spraying the cleaning composition in a spray form (shower method), an ultrasonic cleaning method of irradiating ultrasonic waves during immersion, and the like. The cleaning agent composition of the invention can be directly used for cleaning without dilution. Examples of the object to be cleaned include the above-mentioned object to be cleaned. Examples of the immersion time include 1 minute to 10 minutes, and further 3 minutes to 6 minutes. Examples of the spraying time include 1 minute to 10 minutes, and further 3 minutes to 6 minutes.
In one or more embodiments, the cleaning method of the present invention may include a step of bringing the object to be cleaned into contact with the cleaning agent composition, and then rinsing the object with water and drying the object. Examples of the rinsing method include running water rinsing. Examples of the drying method include air drying.
In one or more embodiments, the cleaning method of the present invention may include a step of contacting the object to be cleaned with the cleaning agent composition and then washing the object with water.
In the cleaning method of the present invention, it is preferable that ultrasonic waves are irradiated when the cleaning agent composition of the present invention is brought into contact with an object to be cleaned, and the ultrasonic waves are more preferably at a high frequency, from the viewpoint of facilitating the exertion of the cleaning power of the cleaning agent composition of the present invention. From the same viewpoint, the irradiation conditions of the ultrasonic waves are, for example, preferably 26 to 72kHz and 80 to 1500W, and more preferably 36 to 72kHz and 80 to 1500W.
In the cleaning method of the present invention, the temperature of the cleaning agent composition is preferably 40 ℃ or higher, more preferably 50 ℃ or higher, and is preferably 70 ℃ or lower, more preferably 60 ℃ or lower, from the viewpoint of reducing the influence on the substrate containing the organic resin, from the viewpoint of easily exhibiting the cleaning power of the cleaning agent composition of the present invention.
[ method for producing electronic component ]
The present invention relates, in one aspect, to a method for manufacturing an electronic component (hereinafter also referred to as "method for manufacturing an electronic component of the present invention") including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using the cleaning method of the present invention. Examples of the object to be cleaned include the above-mentioned object to be cleaned. In the method for manufacturing an electronic component according to the present invention, the resin mask attached to the electronic component can be effectively removed by cleaning using the cleaning method according to the present invention, and thus an electronic component with high reliability can be manufactured. Further, by carrying out the cleaning method of the present invention, the resin mask adhering to the electronic component can be easily removed, and therefore, the cleaning time can be shortened, and the manufacturing efficiency of the electronic component can be improved.
[ set ]
The present invention relates to a kit (hereinafter also referred to as "kit of the present invention") used in any one of the cleaning method of the present invention and the method for manufacturing an electronic component of the present invention. The kit of the invention is in one or more embodiments a kit for making the cleanser composition of the invention.
One embodiment of the kit of the present invention includes a kit (3-liquid type cleansing composition) containing, in an immiscible state: the solution containing the component a (the 1 st liquid), the solution containing the component B (the 2 nd liquid), and the solution containing the component D (the 3 rd liquid), at least one selected from the 1 st liquid, the 2 nd liquid, and the 3 rd liquid further contains a part or all of the component C, and the 1 st liquid, the 2 nd liquid, and the 3 rd liquid are mixed at the time of use. After the 1 st, 2 nd and 3 rd liquids are mixed, they may be diluted with the component C (water) as required. The liquid 1, the liquid 2 and the liquid 3 may contain the above-mentioned optional components, respectively, as required.
Another embodiment of the kit of the present invention includes a kit (2-pack type cleansing composition) containing, in an immiscible state: a solution containing the component A and the component D (solution 1) and a solution containing the component B (solution 2), at least one of the solution 1 and the solution 2 further containing a part or all of the component C (water), and the solution 1 and the solution 2 are mixed at the time of use. After the first and second liquids 1 and 2 are mixed, they may be diluted with the component C (water) as required. The liquid 1 and the liquid 2 may each contain any of the above components as required.
According to the kit of the present invention, a cleaning agent composition having excellent resin mask removability can be obtained.
In one or more other embodiments of the kit of the present invention, from the viewpoint of availability and workability, preferred examples include: a kit comprising a1 st liquid, a2 nd liquid and a3 rd liquid, wherein the 1 st liquid contains 30 to 50 mass% of component A and contains component C as a remainder, the 2 nd liquid consists of only component B, and the 3 rd liquid contains component D and component C as a remainder;
a kit comprising a first liquid (1), a second liquid (2) and a third liquid (3), wherein the first liquid (1) contains 30-50% by mass of a component (A) and contains a component (C) as the remainder, the second liquid (2) contains 1-99% by mass of a component (B) and contains a component (C) as the remainder, and the third liquid (3) contains a component (D) and a component (C) as the remainder. These kits may further contain a 4 th liquid containing component C, and it is more preferable to dilute a mixture of the 1 st liquid, the 2 nd liquid, and the 3 rd liquid to an arbitrary concentration using the 4 th liquid.
From the same viewpoint, in another one or more embodiments of the kit of the present invention, it is preferable that the kit comprises a1 st liquid and a2 nd liquid, the 1 st liquid contains 1 to 40 mass% of the component a, contains 5 to 90 mass% of the component B, contains the component C as a remaining part, and the 2 nd liquid contains the component D, an optional component, and the component C as a remaining part. The kit may further comprise a3 rd liquid containing the component C, and it is more preferable to dilute the mixture of the 1 st liquid and the 2 nd liquid to an arbitrary concentration using the 3 rd liquid.
The invention also relates to one or more of the following embodiments.
[ 1] A cleaning method comprising a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using a cleaning agent composition containing an alkaline agent (component A), an organic solvent (component B) and water (component C), wherein the coordinates of the Hansen solubility parameter of the component B are radii of 5.45MPa centering on δ d ═ 18.3, δ p ═ 6.8 and δ h ═ 3.70.5The conductive property of the cleaning agent composition is 11S/m or more.
< 2 > the cleaning method according to the above < 1 >, wherein the conductivity is preferably 20S/m or less, more preferably 15S/m or less.
< 3 > the cleaning method as described above < 1 > or < 2 >, wherein the component A is at least 1 selected from inorganic bases and organic bases.
< 4 > the cleaning method as defined in any one of the above < 1 > to < 3 >, wherein the content of the component A in the cleaning agent composition at the time of use is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, further preferably 1% by mass or more, further preferably 2% by mass or more, and further preferably 5% by mass or less, more preferably 4% by mass or less, further preferably 3.5% by mass or less, further preferably 3% by mass or less, specifically, the content of the component A is preferably 0.1% by mass or more and 5% by mass or less, more preferably 0.5% by mass or more and 4% by mass or less, further preferably 1% by mass or more and 3.5% by mass or less, further preferably 2% by mass or more and 3% by mass or less.
< 5 > the cleaning method as described in any one of above < 1 > to < 4 > wherein the hansen solubility parameter of component B has coordinates centered at δ d-18.3, δ p-6.8, δ h-3.7, preferably a radius of 5.42MPa0.5More preferably a radius of 5.38MPa, in the range of0.5In the range of (1), a radius of 4.00MPa is more preferable0.5Within the sphere of (1).
< 6 > the cleaning method according to any one of the above < 1 > to < 5 >, wherein the component B is preferably a combination of 1 or 2 or more selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde, more preferably a combination of 1 or 2 or more selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, diethylene glycol diethyl ether, cyclohexanone and benzaldehyde, further preferably a combination of 1 or 2 or more selected from acetophenone, tetrahydrofuran, dimethoxytetrahydrofuran and diethylene glycol diethyl ether, more preferably acetophenone, and still more preferably at least 1 or 2 or more selected from acetophenone, propiophenone, p-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, cyclohexanone, and benzaldehyde.
< 7 > the cleaning method according to any one of the above < 1 > to < 6 >, wherein the boiling point of the component B is preferably 160 ℃ or higher, more preferably 200 ℃ or higher.
< 8 > the cleaning method according to any one of the above < 1 > to < 7 >, wherein the solubility of the component B in 100mL of water is preferably 0.3g or more.
< 9 > the cleaning method according to any one of the above < 1 > to < 8 >, wherein the content of the component B at the time of use is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, further preferably 0.5% by mass or more, further preferably 1% by mass or more, and further preferably 10% by mass or less, more preferably 7% by mass or less, further preferably 5% by mass or less, further preferably 4% by mass or less, specifically, the content of the component B is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.3% by mass or more and 7% by mass or less, further preferably 0.5% by mass or more and 5% by mass or less, further preferably 1% by mass or more and 4% by mass or less, and further preferably 0.1% by mass or more and 5% by mass or less.
< 10 > the cleaning method according to any one of the above < 1 > to < 9 >, wherein the mass ratio (a/B) of the component a to the component B is preferably 0.05 or more, more preferably 0.1 or more, further preferably 0.5 or more, further preferably 0.8 or more, and preferably 20 or less, more preferably 10 or less, further preferably 5 or less, further preferably 3 or less, and specifically, the mass ratio (a/B) is preferably 0.05 or more and 20 or less, more preferably 0.1 or more and 10 or less, further preferably 0.5 or more and 5 or less, further preferably 0.8 or more and 3 or less.
< 11 > the cleaning method as defined in any of the above < 1 > to < 10 >, wherein the content of the component C in the cleaning agent composition is preferably 60% by mass or more, more preferably 70% by mass or more, further preferably 75% by mass or more, and preferably 95% by mass or less, specifically, the content of the component C is preferably 60% by mass or more and 95% by mass or less, more preferably 70% by mass or more and 95% by mass or less, further preferably 75% by mass or more and 95% by mass or less.
< 12 > the cleaning method according to any one of the above < 1 > to < 11 >, wherein the mass ratio B/C of the component B to the component C is preferably 0.01 or more, more preferably 0.02 or more, and preferably 0.06 or less, more preferably 0.04 or less, specifically, the mass ratio B/C is preferably 0.01 or more and 0.06 or less, more preferably 0.02 or more and 0.04 or less.
< 13 > the cleaning method as described in any one of above < 1 > to < 12 > further comprising a salt of an inorganic acid other than component A (component D).
< 14 > the cleaning method according to the above < 13 >, wherein the component D is preferably an alkali metal salt or an ammonium salt, more preferably at least 1 selected from the group consisting of sodium sulfate, cesium sulfate, potassium sulfate, ammonium sulfate, sodium chloride, potassium chloride and ammonium chloride, and still more preferably sodium sulfate.
< 15 > the cleaning method as described in the above < 13 > or < 14 >, wherein the content of the component D in use is preferably 0.1% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, further preferably 5% by mass or more, further preferably 10% by mass or more, further, it is preferably 30% by mass or less, more preferably 25% by mass or less, further preferably 20% by mass or less, further preferably 15% by mass or less, specifically, the content of the component D is preferably 1% by mass or more and 30% by mass or less, more preferably 3% by mass or more and 25% by mass or less, further preferably 5% by mass or more and 20% by mass or less, further preferably 10% by mass or more and 15% by mass or less, further, it is preferably 0.1% by mass or more and 30% by mass or less, and more preferably 0.1% by mass or more and 20% by mass or less.
< 16 > the cleaning method as defined in any one of the above < 13 > to < 15 >, wherein the mass ratio D/C of the component D to the component C is preferably 0.02 or more, more preferably 0.1 or more, further preferably 0.15 or more, and preferably 0.6 or less, more preferably 0.3 or less, further preferably 0.2 or less, specifically, the mass ratio D/C is preferably 0.02 or more and 0.6 or less, more preferably 0.1 or more and 0.3 or less, further preferably 0.15 or more and 0.2 or less.
< 17 > the cleaning method according to any one of the above < 1 > to < 16 >, wherein the content of the component A in the cleaning agent composition is 0.1% by mass or more and 5% by mass or less, and the content of the component B in the cleaning agent composition is 0.1% by mass or more and 10% by mass or less.
< 18 > the cleaning method as defined in any one of above < 1 > to < 17 >, wherein the cleaning agent composition is substantially free of nitrogen-containing compounds and phosphorus-containing compounds.
< 19 > the cleaning method as defined in any one of above < 1 > to < 18 >, wherein the temperature of the cleaning agent composition is preferably 40 ℃ or more, more preferably 50 ℃ or more, and preferably 70 ℃ or less, more preferably 60 ℃ or less.
< 20 > the cleaning method as described in any of above < 1 > to < 19 >, wherein the resin mask is a negative type dry film resist subjected to at least one of exposure and development.
< 21 > the cleaning method according to any one of the above < 1 > to < 20 >, wherein the object to be cleaned is an intermediate for manufacturing electronic parts.
< 22 > A method for manufacturing an electronic component, comprising a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached, by using the cleaning method as described in any one of the above < 1 > to < 21 >.
< 23 > a cleaning agent composition for resin mask peeling, comprising an alkaline agent (component A), an organic solvent (component B), water (component C) and a salt of an inorganic acid (component D) other than component A, wherein the coordinates of the Hansen solubility parameter of component B are radii of 5.45MPa centering on δ D-18.3, δ p-6.8 and δ h-3.70.5Within the sphere of (1).
< 24 > the cleaning agent composition as defined in above < 23 >, wherein the component D is at least 1 selected from the group consisting of sodium sulfate, cesium sulfate, potassium sulfate, ammonium sulfate, sodium chloride, potassium chloride and ammonium chloride.
< 25 > the cleaning agent composition as described in < 23 > or < 24 > above, wherein the content of the component A is 0.1 mass% or more and 5 mass% or less, the content of the component B is 0.1 mass% or more and 5 mass% or less, and the content of the component D is 0.1 mass% or more and 30 mass% or less.
< 26 > the cleaning agent composition according to any one of the above < 23 > to < 25 >, wherein the component B is at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde.
< 27 > the cleaning agent composition as defined in any one of above < 23 > to < 26 >, wherein the component B is at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, cyclohexanone and benzaldehyde.
< 28 > the cleaning agent composition according to any one of the above < 23 > to < 27 >, wherein the total content of organic substances derived from the component A, the component B and any component in the cleaning agent composition at the time of use is 0.5 mass% or more and 15 mass% or less.
< 29 > a kit for producing the cleaning agent composition as defined in any of the above < 23 > to < 28 > comprising, in an immiscible state: the solution containing the component A (the 1 st liquid), the solution containing the component B (the 2 nd liquid), and the solution containing the component D (the 3 rd liquid), at least one selected from the 1 st liquid, the 2 nd liquid, and the 3 rd liquid further contains a part or all of the component C, and the 1 st liquid, the 2 nd liquid, and the 3 rd liquid are mixed at the time of use.
Use of the detergent composition described in any one of the above-mentioned items < 23 > to < 28 > as a detergent composition for resin mask peeling.
Use of a cleaning agent composition as described in any of the above-mentioned items < 23 > to < 28 > for cleaning an intermediate for manufacturing electronic parts.
Examples
The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples at all.
1. Physical properties (coordinates and distance of HSP) of organic solvent (component B, non-component B)
Coordinates of HSP of organic solvent (. delta.d)1、δp1、δh1) Using the computer software "HSPiP: hansen Solubility Parameters in Practice' calculation. Then, the organic solvent was calculated by the following formulaCoordinate of HSP (δ d)1、δp1、δh1) Distance from the component coordinate (δ d 18.3, δ p 6.8, δ h 3.7). The results are shown in Table 1.
Distance [ (δ d)1－18.3)2+(δp1－6.8)2+(δh1－3.7)2]0.5
[ Table 1]
2. Preparation of cleaning agent compositions of examples 1 to 9, comparative examples 1 to 11 and reference example 1
In a 200mL tall glass beaker, 2.5g of potassium hydroxide (component a), 3.0g of acetophenone (component B), 92.0g of water (component C) and 2.5g of sodium sulfate (component D) were mixed in terms of the effective components, and the mixture was stirred and mixed to prepare the cleansing composition of example 1. Then, by the same method as in example 1, in the case of containing components other than the components A to D, they were also blended together to prepare the cleaning agent compositions of examples 2 to 9, comparative examples 1 to 11 and reference example 1 at the composition ratios of the effective components shown in Table 2. The content (mass%, effective component) of each component of each cleaning agent composition is shown in table 2.
The following components were used as the components of the cleaning agent compositions of examples 1 to 9, comparative examples 1 to 11 and reference example 1.
(component A)
A1: potassium hydroxide [ Special grade 48% by mass of solid matter component manufactured by Kanto chemical Co., Ltd ]
A2: sodium hydroxide [ Special grade 48% by mass of solid matter component manufactured by Kanto chemical Co., Ltd ]
A3: tetramethylammonium hydroxide [ TMAH (25%) manufactured by Showa Denko K.K. ]
(component B)
B1: acetophenone [ Fuji FILM and Special grade manufactured by Wako pure chemical industries, Ltd ]
B2: tetrahydrofuran [ Fuji FILM and Wako pure chemical industries, Special grade ]
B3: dimethoxytetrahydrofuran [ manufactured by Tokyo chemical industry Co., Ltd ]
B4: diethylene glycol diethyl ether [ Fuji FILM and Wako pure chemical industries, first order ]
(not component B)
B5: diethylene glycol monobutyl ether [ Fuji FILM and Special grade manufactured by Wako pure chemical industries, Ltd ]
B6: diethylene glycol dimethyl ether [ Fuji FILM and Special grade manufactured by Wako pure chemical industries, Ltd ]
B7: butyl acetate [ Fuji FILM and Wako pure chemical industries, first order ]
B8: diethylene glycol phenyl ether [ manufactured by Tokyo chemical industry Co., Ltd ]
B9: ethylene glycol monobenzyl ether [ manufactured by Nippon emulsifier Co., Ltd ]
(component C)
Water: purified water of 1. mu.S/cm or less produced by G-10DSTSET, a water purifier manufactured by Organo corporation
(component D)
D1: sodium sulfate [ Special grade sodium sulfate decahydrate manufactured by Nacalai Tesque K.K. ]
[ conductivity ]
The electrical conductivity of the cleaning agent compositions of examples 1 to 9, comparative examples 1 to 11, and reference example 1 was measured at 25 ℃ using an electrical conductivity meter (DKK-TOA, CM-30V, electrode CT-54101A), and the electrode was immersed in the cleaning agent composition for 1 minute while being stirred. The results are shown in Table 2.
3. Evaluation of cleaning agent composition
The resin mask removability of the cleaning agent compositions of examples 1 to 9, comparative examples 1 to 11, and reference example 1 was evaluated.
[ production of test piece of resin mask 1]
A photosensitive film for Direct Imaging (Direct Imaging) (photosec RD-1225 manufactured by hitachi chemical co., ltd., thickness 25 μm, negative dry film resist) was laminated on the surface of a glass epoxy resin multilayer substrate (MCL-E-679 FG manufactured by hitachi chemical co., ltd.) under the following conditions, selectively subjected to an exposure treatment to cure the exposed portion (exposure step), and the unexposed portion was removed by a development treatment (development step), thereby obtaining a substrate having a resist pattern (negative resin mask in a pattern shape). Then, the area from which the unexposed portion was removed by the above-described development treatment was subjected to a copper plating treatment, thereby obtaining a test piece (4cm × 4.5 cm).
(1) Laminating: the treatment was carried out using a cleaning roller (RY-505Z manufactured by RAYON INDUSTRIAL Co., Ltd.) and a vacuum applicator (VA 7024/HP5 manufactured by Rohm and Haas Co., Ltd.) under conditions of a roller temperature of 50 ℃, a rolling pressure of 1.4Bar, and a treatment time of 30 seconds.
(2) Exposure: using a direct imaging device for printed boards (Mercurex LI-9500 manufactured by SCREEN Graphics and Precision Solutions, Ltd.), exposure amount was 15mJ/cm2And (6) carrying out exposure.
(3) Pattern shape: stripe pattern of L/S20 μm/20 μm
(4) And (3) developing: the resin mask in the unexposed area was removed by using a developing apparatus for a substrate (LT-980366 manufactured by Yankee corporation) and a 1% sodium carbonate aqueous solution at 30 ℃ under a spray pressure of 0.2MPa for 47 seconds.
[ production of test piece of resin mask 2]
A photosensitive film (HP-1060 manufactured by hitachi chemical co., ltd., thickness 60 μm, negative dry film resist) was laminated on the surface of the glass epoxy resin multilayer substrate under the following conditions, selectively subjected to exposure treatment to cure the exposed portions (exposure step), and then the unexposed portions were removed by development treatment (development step), thereby obtaining a substrate having a resist pattern (negative resin mask in a pattern shape). Then, the area from which the unexposed portion was removed by the above-described development treatment was subjected to a copper plating treatment, thereby obtaining a test piece (4cm × 4 cm).
(1) Laminating: this was carried out using a cleaning roller (RY-505Z manufactured by RAYON INDUSTRIAL Co., Ltd.) and a vacuum applicator (VA 7024/HP5 manufactured by Rohm and Haas Co., Ltd.).
(2) Exposure: the exposure was performed using a direct imaging apparatus (Mercurex LI-9500 manufactured by SCREEN Graphics and Precision Solutions, Inc.) for a printed substrate.
(3) Pattern shape: stripe pattern of L/S20 μm/20 μm
(4) And (3) developing: the resin mask in the unexposed area was removed by using a developing apparatus for a substrate (LT-980366 manufactured by Yankee corporation) and a 1% sodium carbonate aqueous solution.
[ cleaning test ]
100g of each detergent composition was added to a tall 200mL glass beaker, the temperature was raised to 60 ℃ and the test piece was immersed for 4 minutes while being stirred at 600rpm using a rotor (fluororesin (PTFE), 8 mm. times.25 mm). Then, the mixture was immersed in a washing tank containing 100g of water in a 100mL glass beaker, washed, and then dried naturally.
[ evaluation of resin mask removability (peeling ratio (%) ]
The removal rate (the ratio (%) of the area of the portion where the resin mask was removed when the total area of the resin mask present before the cleaning test was assumed to be 100) was calculated by visually confirming the presence or absence of the resin mask remaining in each part of the test piece after the cleaning test at 300-fold magnification using an optical microscope "digital microscope VHX-2000" (manufactured by KEYENCE corporation). The results are shown in Table 2.
[ Effect on the substrate ]
100g of each cleaning agent composition was put into a 250mL wide-necked polypropylene bottle, a glass epoxy resin multilayer substrate (2 cm. times.5 cm) was impregnated with the cleaning agent composition, the glass epoxy resin multilayer substrate was stored at 60 ℃ for 7 days, and then the substrate was washed with water, and the state of the substrate surface after drying was visually observed, and evaluation was performed according to the following evaluation criteria, and the results of the evaluation are shown in Table 2.
A: no change from before the test
B: deterioration of substrate surface
[ Table 2]
As shown in Table 2, the cleaning agent compositions of examples 1 to 9 were found to have excellent resin mask removability as compared with comparative examples 1 to 2, 7 to 9 and 11 containing no component B, comparative example 3 containing no component A, comparative examples 4 to 6 containing no component B and having an electric conductivity out of a predetermined range, and reference examples 1 and 10 containing component A, B and having an electric conductivity out of a predetermined range. In addition, the cleaning agent compositions of examples 1 to 9 had a lower effect on the substrate containing the organic resin than comparative example 10 in which the organic matter content exceeded 15 mass%. Further, the organic matter content of the cleaning agent compositions of examples 1 to 9 was 15 mass% or less, and the load of wastewater treatment was considered to be small.
Industrial applicability
According to the present invention, a cleaning method excellent in resin mask removal performance can be provided. Therefore, the cleaning method of the present invention is useful as a cleaning method usable in a manufacturing process of an electronic component, and can shorten a cleaning process of an electronic component to which a resin mask is attached, improve the performance and reliability of the manufactured electronic component, and improve the productivity of a semiconductor device.
Claims (15)
1. A cleaning method comprising a step of peeling a resin mask from an object to be cleaned to which the resin mask is adhered by using a cleaning agent composition,
the cleaning agent composition contains: an alkaline agent, namely component A, an organic solvent, namely component B, and water, namely component C,
the hansen solubility parameter of component B is represented by a radius of 5.45MPa centered at δ d of 18.3, δ p of 6.8, δ h of 3.70.5In the range of the ball of (a),
the conductivity of the cleaning agent composition is more than 11S/m.
2. The cleaning method according to claim 1, wherein the component B is at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone, and benzaldehyde.
3. The cleaning method according to claim 1 or 2, wherein the cleaning agent composition is substantially free of a nitrogen-containing compound and a phosphorus-containing compound.
4. The cleaning method according to any one of claims 1 to 3, wherein the resin mask is a negative type dry film resist subjected to at least one of exposure and development.
5. The cleaning method according to any one of claims 1 to 4, wherein the object to be cleaned is a manufacturing intermediate of an electronic component.
6. The cleaning method according to any one of claims 1 to 5, wherein the content of the component A in the cleaning agent composition is 0.1% by mass or more and 5% by mass or less,
the content of component B in the cleaning agent composition is 0.1 to 10 mass%.
7. The cleaning method according to any one of claims 1 to 6, wherein a content of the component C in the cleaning agent composition is 70% by mass or more and 95% by mass or less.
8. A method for manufacturing an electronic component, comprising a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached by using the cleaning method according to any one of claims 1 to 7.
9. A cleaning agent composition for stripping a resin mask, comprising: an alkaline agent, namely component A, an organic solvent, namely component B, water, namely component C, and a salt of an inorganic acid other than component A, namely component D,
the hansen solubility parameter of component B is represented by a radius of 5.45MPa centered at δ d of 18.3, δ p of 6.8, δ h of 3.70.5Within the sphere of (1).
10. The cleaning agent composition according to claim 9, wherein the component D is at least 1 selected from the group consisting of sodium sulfate, cesium sulfate, potassium sulfate, ammonium sulfate, sodium chloride, potassium chloride and ammonium chloride.
11. The cleaning agent composition according to claim 9 or 10, wherein the content of the component A is 0.1% by mass or more and 5% by mass or less,
the content of component B is 0.1-5% by mass,
the content of component D is 0.1 to 30% by mass.
12. The cleaning agent composition according to any one of claims 9 to 11, wherein the component B is at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetole, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone, and benzaldehyde.
13. The cleaning agent composition according to any one of claims 9 to 11, wherein the component B is at least 1 selected from acetophenone, propiophenone, p-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, cyclohexanone and benzaldehyde.
14. The cleaning agent composition according to any one of claims 9 to 13, wherein the total content of organic substances derived from the component a, the component B and any component in the cleaning agent composition at the time of use is 0.5 mass% or more and 15 mass% or less.
15. A kit for the manufacture of a cleaner composition according to any one of claims 9 to 14,
the method comprises the following steps of: a solution containing a component A, i.e., a1 st liquid, a solution containing a component B, i.e., a2 nd liquid, and a solution containing a component D, i.e., a3 rd liquid,
at least one selected from the group consisting of the 1 st liquid, the 2 nd liquid and the 3 rd liquid further contains a part or all of the component C,
the No. 1, No. 2 and No. 3 liquids are mixed at the time of use.
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| JP2018141673 | 2018-07-27 | ||
| PCT/JP2019/029464 WO2020022491A1 (en) | 2018-07-27 | 2019-07-26 | Cleaning method |
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| CN113502480A (en) * | 2021-09-13 | 2021-10-15 | 深圳市板明科技股份有限公司 | Inorganic system membrane stripping liquid containing accelerator and use method thereof |
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| CN113985712A (en) * | 2020-07-27 | 2022-01-28 | 山东浪潮华光光电子股份有限公司 | Normal-temperature photoresist removing method for LED chip |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000468A (en) * | 2006-01-11 | 2007-07-18 | 东进世美肯株式会社 | Colorful resist remover composition for thin film transistor LCD |
| JP2007254555A (en) * | 2006-03-22 | 2007-10-04 | Sanyo Chem Ind Ltd | Cleanser composition |
| CN101373343A (en) * | 2007-08-20 | 2009-02-25 | 株式会社东进世美肯 | Color photoresist stripping solution composition for thin film transistor liquid crystal display |
| JP2015018957A (en) * | 2013-07-11 | 2015-01-29 | 株式会社日立ハイテクノロジーズ | Semiconductor process liquid and processing method using the same |
| KR20160016179A (en) * | 2014-08-04 | 2016-02-15 | 동우 화인켐 주식회사 | Stripper composition for photoresist and organic layer |
| KR20160118548A (en) * | 2015-04-02 | 2016-10-12 | 동우 화인켐 주식회사 | Resist stripper composition |
| WO2018047631A1 (en) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | Cleaning agent composition for resin mask detachment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339127A (en) * | 1976-09-21 | 1978-04-10 | Fuji Yakuhin Kogyo Kk | Photo resist frilling agent |
| JPH0862610A (en) * | 1994-08-16 | 1996-03-08 | Toshiba Corp | Peeling liquid for resist for liquid crystal display device |
| JP2001215735A (en) * | 2000-02-04 | 2001-08-10 | Jsr Corp | Resist removing solution composition, removing method and circuit board |
| JP4626978B2 (en) * | 2004-03-03 | 2011-02-09 | ダイセル化学工業株式会社 | Lithographic cleaning agent and rinsing liquid |
| US8883699B2 (en) * | 2011-10-25 | 2014-11-11 | Dongwoo Fine-Chem Co., Ltd. | Resist stripping composition and method of stripping resist using the same |
-
2019
- 2019-07-26 TW TW108126671A patent/TW202012062A/en unknown
- 2019-07-26 CN CN201980049478.4A patent/CN112470079A/en active Pending
- 2019-07-26 JP JP2020532506A patent/JP7291704B2/en active Active
- 2019-07-26 WO PCT/JP2019/029464 patent/WO2020022491A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000468A (en) * | 2006-01-11 | 2007-07-18 | 东进世美肯株式会社 | Colorful resist remover composition for thin film transistor LCD |
| JP2007254555A (en) * | 2006-03-22 | 2007-10-04 | Sanyo Chem Ind Ltd | Cleanser composition |
| CN101373343A (en) * | 2007-08-20 | 2009-02-25 | 株式会社东进世美肯 | Color photoresist stripping solution composition for thin film transistor liquid crystal display |
| JP2015018957A (en) * | 2013-07-11 | 2015-01-29 | 株式会社日立ハイテクノロジーズ | Semiconductor process liquid and processing method using the same |
| KR20160016179A (en) * | 2014-08-04 | 2016-02-15 | 동우 화인켐 주식회사 | Stripper composition for photoresist and organic layer |
| KR20160118548A (en) * | 2015-04-02 | 2016-10-12 | 동우 화인켐 주식회사 | Resist stripper composition |
| WO2018047631A1 (en) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | Cleaning agent composition for resin mask detachment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113502480A (en) * | 2021-09-13 | 2021-10-15 | 深圳市板明科技股份有限公司 | Inorganic system membrane stripping liquid containing accelerator and use method thereof |
| CN113502480B (en) * | 2021-09-13 | 2021-11-23 | 深圳市板明科技股份有限公司 | Inorganic system membrane stripping liquid containing accelerator and use method thereof |
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| JPWO2020022491A1 (en) | 2021-08-19 |
| WO2020022491A1 (en) | 2020-01-30 |
| TW202012062A (en) | 2020-04-01 |
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