KR20160118548A - Resist stripper composition - Google Patents

Abstract

The present invention relates to a resist stripping liquid composition and, more specifically, to resist stripping liquid composition which has excellent stripping strength of the resist by comprising: polyether amine of a specific structure; and an amine compound including an alkoxy group having 1 to 6 carbon atoms or an alkyl group having 1 to 6 carbon atoms substituted with a cyclic ether group having 2 to 6 carbon atoms.

Description

Resist stripper composition [

The present invention relates to a resist stripper composition, and more particularly, to a resist stripper composition having excellent stripping power.

A color filter can be embedded in a color imaging device of an image sensor, such as a complementary metal oxide semiconductor (CMOS) or a charge coupled device (CCD), and can be used to actually obtain a color image (PDP), a liquid crystal display (LCD), a field emission display (FEL), and a light emitting display (LED), and the application range thereof is rapidly expanding. Particularly, in recent years, the use of LCDs has been further expanded, and accordingly, color filters have been recognized as one of the most important components in reproducing color tones of LCDs.

The color filter substrate includes a red matrix (R), a green (G), and a blue (B) pattern, a black matrix for blocking leakage light between each pixel and improving contrast, .

The color filter is manufactured by applying a black matrix material selected according to the application to a glass substrate, forming a black mask pattern, and then forming a color resist pattern by a photolithography process.

In the color filter manufacturing process, defective color resist patterns may inevitably occur. When the color resist is once cured, it is almost impossible to repair only a wrong part and repair. Since there is almost no solvent capable of removing the color resist, There is a problem that the color filter is mostly disposed of immediately without being subjected to rework such as repair, and productivity is lowered.

To solve this problem, a composition for removing a cured color resist has been developed.

Resists can be roughly divided into positive resists and negative resists. Unlike positive resists, which are easier to remove and removed by organic solvent-based exfoliants at temperatures of 40 to 50 ° C within 1 minute, And has a characteristic of a negative type resist which has a high degree of curing and is hardened by heat treatment and is difficult to remove. Accordingly, in order to remove the color resist, a time of not less than 5 minutes is required under a temperature condition of 70 占 폚 or more, so that stronger peeling performance is required.

In addition, in order to realize high resolution of display, the number of pixels of the panel is increased. In case of RGBW transparent resist which has a 4-pixel structure for increasing the light efficiency of such a panel, not only high hardness but also thermal stability and chemical stability There is a problem that removal is more difficult by using a high resin.

Korean Patent Laid-Open No. 2009-75516 discloses a color resist stripper composition for a TEFLIT® LC, but does not satisfy both of excellent peel strength and ability to maintain it for a long time.

Korean Patent Publication No. 2009-75516

An object of the present invention is to provide a resist stripping solution excellent in the peeling force for a cured color filter resist.

It is another object of the present invention to provide a resist stripping solution which can peel off not only color filter resist but also negative and positive organic insulation film resist without damaging the underlying film and various metal wiring.

1. A polyetheramine represented by at least one of the following general formulas (1) and (2); And

An amine compound containing an alkyl group having 1 to 6 carbon atoms substituted with an alkoxy group having 1 to 6 carbon atoms or a cyclic ether group having 2 to 6 carbon atoms.

[Chemical Formula 1]

(Wherein R ₁ is an alkylene group having 1 to 6 carbon atoms or -R ₂ -OR ₃ -

R ₂ and R ₃ are each independently an alkylene group having 1 to 6 carbon atoms,

n1 and n2 are independently an integer of 1 to 6)

(2)

이며,(Wherein X is

Lt;

R ₄ is an alkyl group having 1 to 6 carbon atoms,

R ₅ independently represents a hydrogen atom or an amino group,

m is an integer of 1 to 3,

n3 is an integer of 1 to 70,

* Indicates a combined hand).

2. The resist stripping composition according to 1 above, wherein the amine compound is a compound represented by the following formula (3):

(3)

이며,(Wherein Y is

Lt;

R ₈ is an alkoxy group having 1 to 6 carbon atoms,

The alkoxy group may be substituted with a cyclic ether group having 2 to 6 carbon atoms or an alkoxy group having 1 to 3 carbon atoms,

R ₆ , R ₇ and R ₉ independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,

n is an integer of 1 to 4,

* Indicates a combined hand).

3. The composition of claim 1, wherein the compound represented by Formula 1 is 3,6-dioxa-1,8-octanediamine, 4,7-dioxadecane-1,10-diamine, 1.12-diamine, and 4,7,10-trioxa-1,13-tridecane diamine.

4. The compound according to item 1, wherein the compound represented by the formula (2)

m is 1, R ₄ is a methyl group,

Two R < ₅ > are each a hydrogen atom and an amino group,

and n3 is from 2 to 3, from 5 to 6, from 33 to 34, or from 67 to 68.

5. The compound according to item 1, wherein the compound represented by the formula (2)

m is 3, R ₄ is an ethyl group, and n3 is 1-2.

6. The above amine compound is at least one selected from the group consisting of methoxyethylamine, methoxypropylamine, ethoxypropylamine, propoxyethylamine, isopropoxypropylamine, methoxyethoxypropylamine, tetrahydrofuran-2-ylmethanamine , (Tetrahydrofuran-2-yl-methyl) butan-1-amine and methyltetrahydrofuran-2-yl-methanamine.

7. A composition according to claim 1, wherein the quaternary organoammonium hydroxide; Polar solvent; And an inorganic base or a salt thereof.

8. The quaternary organic ammonium hydroxide of claim 7, wherein the quaternary ammonium is selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH). ≪ / RTI >

9. The process of claim 7 wherein said polar solvent is selected from the group consisting of dimethyl sulfoxide, diethyl sulfoxide, dipropyl sulfoxide, sulfolane, n-methyl pyrrolidone, pyrrolidone, and n-ethyl pyrrolidone. Wherein the resist stripper composition is at least one resist composition.

10. The method of claim 7 wherein the inorganic base or salt thereof is selected from the group consisting of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, sodium nitrate, potassium nitrate, sodium sulfate, potassium sulfate, sodium silicate, potassium silicate, And potassium acetate.

11. The resist stripping composition according to 7 above, further comprising at least one of hydroxylamine and alkylene (C1 to C5) glycol alkyl (C1 to C6) ether.

12. The resist stripping composition according to 11 above, wherein the hydroxylamine is at least one selected from the group consisting of n-hydroxylamine, dimethylhydroxylamine and diethylhydroxylamine.

13. The process of claim 11, wherein the alkylene (C 1 -C 5) glycol alkyl (C 1-6) ether is selected from the group consisting of ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, triethylene glycol dimethyl ether, ethylene glycol At least one member selected from the group consisting of diethyl ether, diethylene glycol diethyl ether, and diethylene glycol methyl ethyl ether.

14. The method of claim 11,

0.5 to 10% by weight of polyetheramine,

1 to 30% by weight of an amine compound,

1 to 20% by weight of quaternary organic ammonium hydroxide,

20 to 70% by weight of a polar solvent,

0.05 to 5% by weight of hydroxylamine,

1 to 30% by weight of alkylene (having 1 to 5 carbon atoms) glycol alkyl (having 1 to 6 carbon atoms) ether,

0.001 to 5% by weight of an inorganic base or salt thereof and

And the remaining amount of water.

15. The resist stripper composition according to 1 above, wherein the resist is at least one of a color filter resist and an organic insulating film resist.

The present invention is excellent in peel strength by dissolving and removing the color filter resist from the substrate without lifting off.

Further, the present invention can minimize clogging of the filter in the equipment, maintain excellent peeling force for a long time, and improve the productivity of color filter reuse.

In addition, the present invention can peel off not only the color filter resist but also the negative and positive organic insulating film resist without damaging the underlying film and various metal wirings.

The present invention relates to a resist stripping liquid composition comprising a polyetheramine and an amine compound having a specific structure. The present invention relates to a resist stripping liquid composition containing a polyetheramine and an amine compound having a specific structure, And a positive organic insulating film resist, which can be peeled off without damaging the underlying film and various metal wirings.

Hereinafter, the present invention will be described in detail.

< Resist Peeling liquid  Composition>

The resist stripping liquid composition of the present invention comprises a polyetheramine having a specific structure; And an amine compound containing an alkyl group having 1 to 6 carbon atoms substituted with an alkoxy group having 1 to 6 carbon atoms or a cyclic ether group having 2 to 6 carbon atoms.

Polyetheramine

The resist stripper composition of the present invention includes a polyetheramine represented by at least one of the following general formulas (1) and (2). The polyetheramine according to the present invention is excellent in solubility in a resist forming resin, The peeling force can be improved and the clogging of the filter in the equipment can be improved. In addition, even in the case of RGBW transparent resist using a resin having high thermal and chemical stability, the resist peeling force may be excellent.

[Chemical Formula 1]

(Wherein R ₁ is an alkylene group having 1 to 6 carbon atoms or -R ₂ -OR ₃ -

R ₂ and R ₃ are each independently an alkylene group having 1 to 6 carbon atoms,

n1 and n2 are independently an integer of 1 to 6)

(2)

이며,(Wherein X is

Lt;

R ₄ is an alkyl group having 1 to 6 carbon atoms,

R ₅ independently represents a hydrogen atom or an amino group,

m is an integer of 1 to 3,

n3 is an integer of 1 to 70,

* Indicates a combined hand).

In the present invention, the alkyl group includes a linear or branched alkyl group.

More specific examples of the compound represented by the general formula (1) include 3,6-dioxa-1,8-octane diamine, 4,7-dioxadecane-1,10-diamine, Diamine, 4,7,10-trioxa-1,13-tridecanediamine, and the like. These may be used alone or in combination of two or more.

Examples of the compound represented by the formula (2) include a bifunctional primary polyether amine, propylene oxide, prepared by aminating ethylene oxide grafted with propylene oxide and having a weight average molecular weight of 176, with trimethylolpropane Trifunctional primary polyether amines prepared by aminating terminal hydroxyl groups and having a weight average molecular weight of 403, and the like. More specifically, m is preferably 1, R ₂ is a methyl group, 2 R ₃ are each a hydrogen atom and an amino group, and n 3 is 2 to 3, 5 to 6, 33 to 34, or 67 to 68 And in this case, the weight average molecular weight may be 200 to 4000, m is 3, R ₂ is ethyl group and n 3 is 1 to 2, and the weight average molecular weight is 300 to 500 days have. These may be used alone or in combination of two or more.

The polyetheramine is contained in an amount of 0.5 to 10% by weight, preferably 1 to 9% by weight, based on the total weight of the resist stripping composition. If the content of the polyetheramine is less than 0.5% by weight, the force to break the bond due to penetration into the cured resist is lowered. If the content is more than 10% by weight, the content of the quaternary organic ammonium hydroxide and the polar solvent decreases The solubility of the resist can be reduced.

Amine compound

The resist stripping composition of the present invention further comprises an amine compound containing an alkyl group having 1 to 6 carbon atoms substituted with an alkoxy group having 1 to 6 carbon atoms or a cyclic ether group having 2 to 6 carbon atoms. The amine compound according to the present invention plays the role of enhancing the alkalinity of the resist stripper composition and has a similar molecular structure to the resist and can easily penetrate into the resist to improve the peeling force of the resist, .

The amine compound according to the present invention can be used without particular limitation, as long as it contains an alkyl group having 1 to 6 carbon atoms and substituted with an alkoxy group having 1 to 6 carbon atoms or a cyclic ether group having 2 to 6 carbon atoms. 3. &Lt; / RTI &gt;

(3)

이며,(Wherein Y is

Lt;

R ₈ is an alkoxy group having 1 to 6 carbon atoms,

The alkoxy group may be substituted with a cyclic ether group having 2 to 6 carbon atoms or an alkoxy group having 1 to 3 carbon atoms,

R ₆ , R ₇ and R ₉ independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,

n is an integer of 1 to 4,

* Indicates a combined hand).

More specific examples of the amine compound include methoxyethylamine, methoxypropylamine, ethoxypropylamine, propoxyethylamine, isopropoxypropylamine, methoxyethoxypropylamine, tetrahydrofuran-2-yl- Methane amine, (tetrahydrofuran-2-yl-methyl) butan-1 -amine, methyltetrahydrofuran-2-yl-methanamine and the like. These may be used alone or in combination of two or more.

The amine compound is contained in an amount of 1 to 30 wt%, preferably 5 to 25 wt%, based on the total weight of the resist stripper composition. If the content of the amine compound is less than 1% by weight, the force to break the bond due to penetration into the cured resist is lowered. If the content is more than 30% by weight, the content of the quaternary organic ammonium hydroxide and the polar solvent decreases, Can be reduced.

As described above, the resist stripping composition of the present invention comprises a polyetheramine represented by at least one of the following general formulas (1) and (2); And an amine compound containing an alkyl group having 1 to 6 carbon atoms substituted with an alkoxy group having 1 to 6 carbon atoms or a cyclic ether group having 2 to 6 carbon atoms can improve the peeling force of the resist and improve the filter clogging can do. In addition, even in the case of RGBW transparent resist using a resin having high thermal and chemical stability, the resist peeling force may be excellent.

The resist stripper composition according to the present invention may further comprise a quaternary organic ammonium hydroxide, a polar solvent, an inorganic base or a salt thereof.

The quaternary organic ammonium hydroxide according to the present invention discharges hydroxide ions and permeates into the resist to promote the dissolution of the resist.

The quaternary organic ammonium hydroxide according to the present invention is not particularly limited and includes, for example, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) Butyl ammonium hydroxide (TBAH), and the like. These may be used alone or in combination of two or more.

The quaternary organic ammonium hydroxide may be contained in an amount of 1 to 20 wt%, preferably 3 to 15 wt%, based on the total weight of the resist stripper composition. If the content of the quaternary organic ammonium hydroxide is less than 1% by weight, the penetration of the hydroxide ion into the resist polymer can be reduced, and if it exceeds 20% by weight, excess water is required for dissolution. Accordingly, the content of the other components may be lowered and the solubility in the resist may be reduced.

The polar solvent according to the present invention penetrates the resist and increases the swelling property to increase the peeling force from the substrate surface. Further, the dissolution ability of the resist stripper composition of the present invention in water is improved, and the residue can be easily removed in the subsequent water washing step.

The polar solvent according to the present invention is not particularly limited and includes, for example, dimethylsulfoxide, diethylsulfoxide, dipropylsulfoxide, sulfolane, n-methylpyrrolidone, pyrrolidone, n-ethylpyrrolidone . These may be used alone or in combination of two or more.

The polar solvent may be included in an amount of 20 to 70% by weight, preferably 25 to 65% by weight based on the total weight of the resist stripper composition. When the content of the polar solvent is less than 20% by weight, the solubility of the resist may be decreased. When the content of the polar solvent is more than 70% by weight, the content of quaternary ammonium hydroxide and other components may be decreased, Can be degraded.

The inorganic base or salt thereof according to the present invention improves the peeling force against the organic insulating film.

The inorganic base or its salt according to the present invention is not particularly limited and includes, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, sodium nitrate, potassium nitrate, sodium sulfate, potassium sulfate, Potassium, sodium acetate, potassium acetate, and the like. These may be used alone or in combination of two or more.

The inorganic base or salt thereof is contained in an amount of 0.001 to 5% by weight, preferably 0.02 to 2% by weight based on the total weight of the resist stripper composition. When the content of the inorganic base or the salt thereof is less than 0.001% by weight, the effect of increasing the peeling force to the organic insulating film is insignificant. When the content is more than 5% by weight, the effect of increasing the amount is insignificant.

The resist stripping composition of the present invention may further comprise at least one of hydroxylamine and alkylene (C1 to C5) glycol alkyl (C1 to C6) ether, if necessary.

The hydroxylamine according to the present invention has a low molecular structure and generates hydroxide ions in a short time to penetrate into the cured resin to break the bond and dissolve the dye component of the resist, so that the peeling force can be further improved.

The hydroxylamine according to the present invention is not particularly limited and includes, for example, n-hydroxylamine, dimethylhydroxylamine, diethylhydroxylamine and the like. These may be used alone or in combination of two or more.

The hydroxylamine may be included in an amount of 0.05 to 5 wt%, preferably 0.02 to 2 wt%, based on the total weight of the resist stripping composition. When the content of the hydroxylamine is less than 0.05% by weight, it is difficult to sufficiently dissolve the dye component of the resist. When the content of the hydroxylamine is more than 5% by weight, the effect due to the increase is not increased, which is not economical. The content of the seed and the polar solvent is lowered, so that the solubility of the resist can be reduced.

The alkylene (C1 to C5) glycol alkyl (having 1 to 5 carbon atoms) ether according to the present invention penetrates into the polymer chain of the cured resin and breaks the chain, thereby further improving the peeling force of the resist.

The alkylene (C 1 -C 5) alkyl (C 1 -C 5) alkyl (C 1 -C 5) ether according to the present invention is not particularly limited and includes, for example, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, Dimethyl ether, ethylene glycol diethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether and the like. These may be used alone or in combination of two or more.

The alkyl (C 1 -C 5) glycol alkyl (C 1 -C 6) ether is contained in an amount of 1 to 30% by weight, preferably 5 to 25% by weight, based on the total weight of the resist stripper composition. If the content of the alkylene glycol alkyl ether is less than 1% by weight, the penetration into the resist polymer may be reduced. If the content is more than 30% by weight, the effect due to the increase is not increased, which is not economical. The solubility of the seed is lowered and the phase stability of the degreasing solution may deteriorate.

The resist stripper composition of the present invention may be appropriately selected according to the specific needs of the above components, and then water may be added to adjust the total composition so that the remaining amount of the entire composition is occupied by water. Preferably, the components are adjusted to have the aforementioned content ranges.

The kind of water is not particularly limited, but it is preferably deionized distilled water, more preferably deionized distilled water for semiconductor processing, and has a specific resistance value of 18 M OMEGA. Or more.

The resist stripper composition according to the present invention may further contain additives such as a corrosion inhibitor, a chelating agent, a leveling agent and a dispersing agent, if necessary.

Examples of the corrosion inhibitor include, but are not limited to, benzotriazole, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] bisethanol, - [[ethyl-1-hydrogen benzotriazol-1-yl] methyl] imino] Dihydrobenzotriazol-1-yl] methyl] imino] bisethanol, 2,2 '- [[[methyl- - [[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bismethylamine, 2,2 '- [[[ -1 hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol; Quinone compounds including 1,2-benzoquinone, 1,4-benzoquinone, 1,4-naphthoquinone, and anthraquinone; Catechol; Alkyl gallate compounds including pyrogallol, methyl gallate, propyl gallate, dodecyl galatate, octyl galatate and gallic acid. These may be used alone or in combination of two or more.

The corrosion inhibitor may be included in an amount of 0.1 to 5% by weight based on the total weight of the resist stripper composition. If the content of the corrosion inhibitor is less than 0.1% by weight, corrosion may occur in a metal wiring made of aluminum or an aluminum alloy and a copper or copper alloy in a peeling or deionized water rinsing process. If the content is more than 5% by weight, Contamination and degradation of the peeling force may occur.

The leveling agent is not particularly limited and a commercially available surfactant may be used.

The resist stripper composition of the present invention may be prepared by appropriately adopting the above components according to specific needs, adding a diluting solvent, and preparing a stripper composition having an appropriate concentration as required.

The resist stripping liquid composition of the present invention not only provides excellent peeling force for the color filter resist but also can be peeled off without damaging the underlying film and various metal wiring by the negative and positive organic insulating film resist .

Any of the color filter resist and / or organic insulating film resist used in this field can be an object to be stripped of the resist stripping liquid composition of the present invention without limitation.

The color filter may be a structure in which only a color resist pattern is formed on the color filter substrate, and may be a laminated structure in which an overcoat layer is applied over the color filter substrate on which the color resist pattern is formed to remove the step between the materials. This organic film layer can be formed through photo-curing, but is not limited thereto.

The method of using the resist stripper composition of the present invention is not particularly limited. For example, when a defective resist pattern occurs during the production process of an organic insulating film or a color filter, the cured resist substrate is dipped in the stripper solution composition, And then applying the liquid composition to the substrate. Accordingly, since the defective color filter and the like can be repaired and reused, the productivity can be remarkably improved.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to be illustrative of the invention and are not intended to limit the scope of the claims. It will be apparent to those skilled in the art that such variations and modifications are within the scope of the appended claims.

Example  And Comparative Example

A residual amount of water was added to the composition and the content (% by weight) shown in Table 1 below to prepare a resist stripping solution composition.

division Quaternary ammonium &lt; RTI ID = 0.0 &gt; polarity
menstruum Polyether
Amine Amine
compound Alkylene
Glycol alkyl
ether Hydroxylamine An inorganic base or
His salt ingredient weight ingredient weight ingredient weight ingredient weight ingredient weight ingredient weight ingredient weight Example 1 TMAH 6 DMSO 50 A1 5 B1 20 - - D1 One Potassium hydroxide 0.4 Example 2 TMAH 7 DMSO 43 A2 7 B1 20 - - D1 2 Potassium hydroxide 0.6 Example 3 TMAH 8 DMSO 31 A1 5 B3 15 C1 15 D1 0.5 Potassium hydroxide 0.3 Example 4 TMAH 6 DMSO 34 A1 2 B3 15 C2 15 D1 0.5 Sodium hydroxide 0.4 Example 5 TMAH 4 DMSO 42.5 A1 5 B2 18 C1 10 D1 2 Potassium acetate 0.5 Example 6 TMAH 6 DMSO 39 A2 3 B2 12 C2 10 D1 3 Potassium acetate 0.5 Example 7 TMAH 7 DMSO 44.2 A3 3 B2 15 C2 8 D1 0.4 nitric acid
potassium 1.0 Example 8 TMAH 5 DMSO 46.4 A2 5 B1 12 C2 10 D1 0.3 Potassium hydroxide 0.5 Example 9 TMAH 8 DMSO 34.8 A2 2 B2 15 C2 15 D1 0.4 Potassium hydroxide 0.2 Example 10 TMAH 9 DMSO 32.4 A2 5 B3 15 C3 10 D1 0.5 Potassium hydroxide 0.3 Example 11 TMAH 6 DMSO 52.2 A2 5 B4 10 C3 10 D1 One Potassium hydroxide 0.4 Example 12 TMAH 5 DMSO 49.5 A2 2 B3 12 C1 15 D1 0.5 Potassium iodide 0.5 Example 13 TMAH 7 DMSO 50.4 A2 2 B3 10 C2 8 D1 0.5 Phosphoric acid
potassium 0.6 Example 14 TMAH 3 DMSO 52.2 A2 7 B3 15 C3 5 D1 4 nitric acid
salt 0.4 Example 15 TMAH 8 DMSO 42.6 A2 One B3 5 C4 18 D1 0.5 Potassium hydroxide 0.2 Example 16 TMAH 8 DMSO 34 A2 3 B1 12 C2 10 D2 0.4 Potassium hydroxide 0.2 Example 17 TMAH 8 DMSO 41.6 A2 3 B1 12 C2 10 D3 0.5 Potassium hydroxide 0.2 Example 18 TMAH 9 Sulfolane 32.6 A1 5 B1 15 C2 10 D1 0.5 Potassium hydroxide 0.2 Example 19 TMAH 9 NMP 32.6 A1 5 B1 15 C2 10 D1 0.5 Potassium hydroxide 0.2 Example 20 TMAH 3 DMSO 50.6 A2 13 B3 15 C3 5 D1 0.5 nitric acid
salt 0.4 Example 21 TMAH 4 DMSO 40.5 A1 5 B3 23 C1 10 D2 0.5 Potassium hydroxide 0.5 Example 22 TEAH 8 DMSO 40.5 A1 /
A2 3/3 B1 10 C2 10 D2 0.5 Potassium hydroxide 0.5 Example 23 TMAH 8 NMP 40.5 A1 /
A3 4/4 B1 10 C2 10 D2 0.5 Potassium hydroxide 0.5 Example 24 TMAH 8 NMP 38.5 A2 3 B1 /
B2 7/7 C2 10 D2 0.5 Potassium hydroxide 0.5 Example 25 TMAH 8 NMP 35.5 A3 8 B1 /
B3 8/8 C2 7 D2 0.5 Potassium hydroxide 0.5 Example 26 TMAH 8 NMP 37.5 A3 5 B1 /
B4 7/7 C2 10 D2 0.5 Potassium hydroxide 0.5 Example 27 TMAH 8 NMP 38.5 A3 5 B2 /
B3 7/7 C2 10 D2 0.5 Potassium hydroxide 0.5 Example 28 TMAH 8 NMP 40.5 A3 5 B3 /
B4 7/7 C2 7 D2 0.5 Potassium hydroxide 0.5 Example 29 TMAH 8 DMSO 39.5 A1 /
A2 3/3 B1 /
B2 7/7 C2 7 D2 0.5 Potassium hydroxide 0.5 Comparative Example 1 TMAH 7 DMSO 33.2 - - B1 15 C2 15 D1 0.4 nitric acid
potassium 1.0 Comparative Example 2 TMAH 7 DMSO 45 - - B2 10 C2 8 D1 0.5 Potassium hydroxide 1.0 Comparative Example 3 TMAH 6 DMSO 58 A1 2 - - C2 8 D1 0.5 Potassium hydroxide 1.0 Comparative Example 4 TMAH 6 DMSO 45 A4 5 B1 10 C1 8 D2 0.5 Potassium hydroxide 1.0 Comparative Example 5 TMAH 6 DMSO 45 A1 8 B5 7 C2 8 D2 0.5 Potassium hydroxide 1.0 Comparative Example 6 TMAH 6 DMSO 51 A1 8 B6 7 C2 8 D2 0.5 Potassium hydroxide 1.0 1. Quaternary organic ammonium hydroxide
TMAH: tetramethylammonium hydroxide, TEAH: tetraethylammonium hydroxide
2. Polar solvent
DMSO: dimethylsulfoxide, Sulfolane: sulfolane,
NMP: n-methylpyrrolidone
3. Polyetheramine
A1: 4,7,10-trioxa-1,13-tridecanediamine
A2: polyoxypropylenediamine (weight average molecular weight: 230)
A3: trimethylolpropane poly (oxypropylene) triamine (weight average molecular weight 440)
A4: 2,2'-oxydiethanamine
4. Amine compound
B1: 3-methoxypropylamine
B2: 3-ethoxypropylamine
B3: Oxolan-2-yl-methanamine
B4: 2-Propoxyethylamine
B5: Diethylamine
B6: Phenylamine
5. Alkylene glycol alkyl ether
C1: diethylene glycol dimethyl ether
C2: triethylene glycol dimethyl ether
C3: diethylene glycol methyl ethyl ether
C4: diethylene glycol diethyl ether
6. Hydroxylamine
D1: n-Hydroxylamine
D2: Dimethylhydroxylamine
D3: Diethylhydroxylamine

Experimental Example  - On resist  About Peel force  evaluation

The following evaluations were performed using the compositions of the Examples and Comparative Examples in Table 1 above.

(1) Color filters Resist

The removal of the resist was performed using a color filter substrate having a transparent material for forming 4 pixels, Red, Green, Blue (hereinafter referred to as WRGB) applied to each pixel. The color resist was prepared by prebaking at 90 DEG C for 120 seconds after coating, patterning after exposure and development, and then hard baking the substrate having the pattern formed in the oven at 220 DEG C in an oven.

Then, a photocurable acrylic overcoat layer was formed on the color substrate on which the color resist pattern was formed.

The prepared color filter resist was immersed in the resist stripper composition of Example and Comparative Example at 70 占 폚 for 5 minutes, 10 minutes and 15 minutes, respectively, and then observed with an optical microscope to evaluate the peeling force of the resist. The results were evaluated according to the following evaluation criteria, and the results are shown in Table 2 below.

(2) Organic insulating film Resist

The photocurable acrylic insulating film composition was applied to a glass substrate and pre-baked at 90 캜 for 120 seconds. After patterning through exposure and development processes, the substrate was hard baked in an oven at 220 ° C to prepare an organic insulating film resist.

The prepared resist was immersed in the resist stripper composition of Example and Comparative Example at 70 占 폚 for 3 minutes and 5 minutes, respectively, and then observed with an optical microscope to evaluate the resist peeling force. The results were evaluated according to the following evaluation criteria, and the results are shown in Table 2 below.

<Evaluation Criteria>

◎: 100% resist is removed

○: 80% or more of resist was removed

?: Less than 80% of the resist was removed

X: little removal of resist

division WRGB substrate Upper organic film 5 minutes 10 minutes 15 minutes 3 minutes 5 minutes Example 1 △ ○ ◎ ○ ◎ Example 2 △ ○ ◎ ○ ◎ Example 3 ○ ◎ ◎ ◎ ◎ Example 4 ○ ◎ ◎ ◎ ◎ Example 5 ○ ◎ ◎ ◎ ◎ Example 6 ○ ◎ ◎ ◎ ◎ Example 7 ○ ◎ ◎ ◎ ◎ Example 8 ○ ◎ ◎ ◎ ◎ Example 9 ○ ◎ ◎ ◎ ◎ Example 10 ○ ◎ ◎ ◎ ◎ Example 11 ○ ◎ ◎ ◎ ◎ Example 12 ○ ◎ ◎ ◎ ◎ Example 13 ○ ◎ ◎ ◎ ◎ Example 14 ○ ◎ ◎ ◎ ◎ Example 15 ○ ◎ ◎ ◎ ◎ Example 16 ○ ◎ ◎ ◎ ◎ Example 17 ○ ◎ ◎ ◎ ◎ Example 18 ○ ◎ ◎ ◎ ◎ Example 19 ○ ◎ ◎ ◎ ◎ Example 20 ○ ◎ ◎ ○ ◎ Example 21 ○ ◎ ◎ ○ ◎ Example 22 ○ ◎ ◎ ◎ ◎ Example 23 ○ ◎ ◎ ◎ ◎ Example 24 ○ ◎ ◎ ◎ ◎ Example 25 ○ ◎ ◎ ◎ ◎ Example 26 ○ ◎ ◎ ◎ ◎ Example 27 ○ ◎ ◎ ◎ ◎ Example 28 ○ ◎ ◎ ◎ ◎ Example 29 ○ ◎ ◎ ◎ ◎ Comparative Example 1 X X ○ △ △ Comparative Example 2 X X ○ △ △ Comparative Example 3 X X X X X Comparative Example 4 X X △ X △ Comparative Example 5 X X △ X △ Comparative Example 6 X X △ △ △

As can be seen from Table 2, the resist stripper composition of the present invention is superior in peel strength to the comparative examples. In addition, it was confirmed that the organic-based insulating film resist exhibits excellent peeling force.

However, in the resist stripper compositions of Comparative Examples 1 to 6, it was confirmed that the resist was hardly removed, or that the resist was slightly detached after a long time of immersion.

Claims (15)

A polyetheramine represented by at least one of the following general formulas (1) and (2); And
An amine compound containing an alkyl group having 1 to 6 carbon atoms substituted with an alkoxy group having 1 to 6 carbon atoms or a cyclic ether group having 2 to 6 carbon atoms.
[Chemical Formula 1]

(Wherein R ₁ is an alkylene group having 1 to 6 carbon atoms or -R ₂ -OR ₃ -
R ₂ and R ₃ are each independently an alkylene group having 1 to 6 carbon atoms,
n1 and n2 are independently an integer of 1 to 6)
(2)

(Wherein X is

Lt;
R ₄ is an alkyl group having 1 to 6 carbon atoms,
R ₅ independently represents a hydrogen atom or an amino group,
m is an integer of 1 to 3,
n3 is an integer of 1 to 70,
* Indicates a combined hand).
The resist stripping composition according to claim 1, wherein the amine compound is a compound represented by the following formula (3):
(3)

(Wherein Y is

Lt;
R ₈ is an alkoxy group having 1 to 6 carbon atoms,
The alkoxy group may be substituted with a cyclic ether group having 2 to 6 carbon atoms or an alkoxy group having 1 to 3 carbon atoms,
R ₆ , R ₇ and R ₉ independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,
n is an integer of 1 to 4,
* Indicates a combined hand).
[Claim 4] The method according to claim 1, wherein the compound represented by Formula 1 is 3,6-dioxa-1,8-octanediamine, 4,7-dioxadecane-1,10-diamine, 4,9-dioxadodecane- Diamine, and at least one selected from the group consisting of 4,7,10-trioxa-1,13-tridecanediamine.
[2] The compound according to claim 1, wherein the compound represented by the formula (2)
m is 1, R ₄ is a methyl group,
Two R &lt; ₅ &gt; are each a hydrogen atom and an amino group,
and n3 is from 2 to 3, from 5 to 6, from 33 to 34, or from 67 to 68.
[2] The compound according to claim 1, wherein the compound represented by the formula (2)
m is 3, R ₄ is an ethyl group, and n3 is 1-2.
2. The process of claim 1 wherein the amine compound is selected from the group consisting of methoxyethylamine, methoxypropylamine, ethoxypropylamine, propoxyethylamine, isopropoxypropylamine, methoxyethoxypropylamine, tetrahydrofuran- Methane amine, (tetrahydrofuran-2-yl-methyl) butan-1 -amine and methyltetrahydrofuran-2-yl-methanamine.
The method of claim 1, wherein the quaternary organic ammonium hydroxide; Polar solvent; And an inorganic base or a salt thereof.
The process of claim 7, wherein the quaternary organic ammonium hydroxide is selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide TBAH). &Lt; / RTI &gt;
8. The method of claim 7, wherein the polar solvent is at least one selected from the group consisting of dimethylsulfoxide, diethylsulfoxide, dipropylsulfoxide, sulfolane, n-methylpyrrolidone, pyrrolidone, By weight.
The method of claim 7, wherein the inorganic base or salt thereof is selected from the group consisting of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, sodium nitrate, potassium nitrate, sodium sulfate, potassium sulfate, sodium silicate, Potassium and the like.
The resist stripper composition according to claim 7, further comprising at least one of hydroxylamine and alkylene (C 1-5) glycol alkyl (C 1-6) ether.
12. The resist stripper composition according to claim 11, wherein the hydroxylamine is at least one selected from the group consisting of n-hydroxylamine, dimethylhydroxylamine, and diethylhydroxylamine.
[Claim 14] The method according to claim 11, wherein the alkylene (C1 to C5) glycol alkyl (C1 to C6) ether is selected from the group consisting of ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, triethylene glycol dimethyl ether, And at least one member selected from the group consisting of ethyl ether, diethylene glycol diethyl ether and diethylene glycol methyl ethyl ether.
The method of claim 11,
0.5 to 10% by weight of polyetheramine,
1 to 30% by weight of an amine compound,
1 to 20% by weight of quaternary organic ammonium hydroxide,
20 to 70% by weight of a polar solvent,
0.05 to 5% by weight of hydroxylamine,
1 to 30% by weight of alkylene (having 1 to 5 carbon atoms) glycol alkyl (having 1 to 6 carbon atoms) ether,
0.001 to 5% by weight of an inorganic base or salt thereof and
And the remaining amount of water.
The resist stripper composition according to claim 1, wherein the resist is at least one of a color filter resist and an organic insulating film resist.