WO2022114110A1 - Cleaning agent composition for detaching resin mask - Google Patents
Cleaning agent composition for detaching resin mask Download PDFInfo
- Publication number
- WO2022114110A1 WO2022114110A1 PCT/JP2021/043347 JP2021043347W WO2022114110A1 WO 2022114110 A1 WO2022114110 A1 WO 2022114110A1 JP 2021043347 W JP2021043347 W JP 2021043347W WO 2022114110 A1 WO2022114110 A1 WO 2022114110A1
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- WO
- WIPO (PCT)
- Prior art keywords
- component
- resin mask
- mass
- present disclosure
- less
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- 239000011347 resin Substances 0.000 title claims abstract description 150
- 229920005989 resin Polymers 0.000 title claims abstract description 150
- 239000000203 mixture Substances 0.000 title claims abstract description 121
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 14
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 13
- 150000001414 amino alcohols Chemical class 0.000 claims abstract description 9
- 239000003599 detergent Substances 0.000 claims description 63
- 238000004140 cleaning Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 18
- -1 hydroxyethyl group Chemical group 0.000 claims description 16
- 238000011161 development Methods 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 6
- 150000001875 compounds Chemical group 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 150000008365 aromatic ketones Chemical class 0.000 claims description 3
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 238000007747 plating Methods 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000007788 liquid Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 239000012141 concentrate Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012466 permeate Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 235000019445 benzyl alcohol Nutrition 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- YSLBFFIVJGJBSA-UHFFFAOYSA-N (4-ethylphenyl)methanol Chemical compound CCC1=CC=C(CO)C=C1 YSLBFFIVJGJBSA-UHFFFAOYSA-N 0.000 description 1
- XKQMKMVTDKYWOX-UHFFFAOYSA-N 1-[2-hydroxypropyl(methyl)amino]propan-2-ol Chemical compound CC(O)CN(C)CC(C)O XKQMKMVTDKYWOX-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- RNDNSYIPLPAXAZ-UHFFFAOYSA-N 2-Phenyl-1-propanol Chemical compound OCC(C)C1=CC=CC=C1 RNDNSYIPLPAXAZ-UHFFFAOYSA-N 0.000 description 1
- CYOIAXUAIXVWMU-UHFFFAOYSA-N 2-[2-aminoethyl(2-hydroxyethyl)amino]ethanol Chemical class NCCN(CCO)CCO CYOIAXUAIXVWMU-UHFFFAOYSA-N 0.000 description 1
- JZQLRTAGAUZWRH-UHFFFAOYSA-N 2-aminoethanol;hydrate Chemical compound [OH-].[NH3+]CCO JZQLRTAGAUZWRH-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- SHAMRMCOVNDTCS-UHFFFAOYSA-M 2-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)C[N+](C)(C)C SHAMRMCOVNDTCS-UHFFFAOYSA-M 0.000 description 1
- YSDSJBOULHYPCB-UHFFFAOYSA-M 2-hydroxypropyl(tripropyl)azanium hydroxide Chemical compound [OH-].OC(C[N+](CCC)(CCC)CCC)C YSDSJBOULHYPCB-UHFFFAOYSA-M 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 description 1
- BDCFWIDZNLCTMF-UHFFFAOYSA-N 2-phenylpropan-2-ol Chemical compound CC(C)(O)C1=CC=CC=C1 BDCFWIDZNLCTMF-UHFFFAOYSA-N 0.000 description 1
- KMTDMTZBNYGUNX-UHFFFAOYSA-N 4-methylbenzyl alcohol Chemical compound CC1=CC=C(CO)C=C1 KMTDMTZBNYGUNX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical class NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 1
- IUEJJWYUYRJJBJ-UHFFFAOYSA-M bis(2-hydroxyethyl)-dipropylazanium hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCO)CCO IUEJJWYUYRJJBJ-UHFFFAOYSA-M 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- MYRLVAHFNOAIAI-UHFFFAOYSA-M diethyl-bis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CC)CCO MYRLVAHFNOAIAI-UHFFFAOYSA-M 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- KGVNNTSVYGJCRV-UHFFFAOYSA-M ethyl-tris(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CCO)CCO KGVNNTSVYGJCRV-UHFFFAOYSA-M 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- LFETXMWECUPHJA-UHFFFAOYSA-N methanamine;hydrate Chemical compound O.NC LFETXMWECUPHJA-UHFFFAOYSA-N 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- RBUVMOSJYGXQEK-UHFFFAOYSA-M triethyl(2-hydroxypropyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC(C)O RBUVMOSJYGXQEK-UHFFFAOYSA-M 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- FQSMVJXSANYLPV-UHFFFAOYSA-M tris(2-hydroxyethyl)-propylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCO)(CCO)CCO FQSMVJXSANYLPV-UHFFFAOYSA-M 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
Definitions
- the present disclosure relates to a cleaning agent composition for removing a resin mask and a method for manufacturing an electronic component using the same.
- a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. This resin mask is finally peeled off and removed, and at that time, an alkaline cleaning agent for peeling is used.
- Patent Document 1 describes the total amount of the detergent as a dual-purpose cleaning agent capable of simultaneously cleaning the solder flux and the dry film resist.
- the amount of benzyl alcohol added was in the range of 5 to 94% by weight, the amine compound was in the range of 1 to 50% by weight, and water was in the range of 3 to 90% by weight. It is described as a dual-purpose cleaning agent characterized by the fact that it is used. Further, in Japanese Patent Application Laid-Open No.
- Patent Document 2 2015-7944 (Patent Document 2), it is possible to both promote the removal of the resin mask layer after the heat treatment of the solder bumps and suppress the solder corrosion, and the cleaning that can improve the solder connection reliability.
- a specific quaternary ammonium hydroxide is contained in an amount of 0.5 parts by mass or more and 3.0 parts by mass or less, and a water-soluble amine is contained in an amount of 3.0 parts by mass or more and 10.0 parts by mass in 100 parts by mass of the cleaning agent composition.
- Cleaning agent for resin mask layer containing 0.3 parts by mass or less, acid or ammonium salt thereof in an amount of 0.3 parts by mass or more and 2.5 parts by mass or less, and water in an amount of 50.0 parts by mass or more and 95.0 parts by mass or less.
- the composition is described.
- the present disclosure comprises, in one embodiment, a quaternary ammonium hydroxide (component A), an amino alcohol (component B), an aromatic alcohol (component C) and water (component D), with component D and component C.
- component A quaternary ammonium hydroxide
- component B amino alcohol
- component C aromatic alcohol
- component D water
- component D water
- component C water
- component D component C
- the present invention relates to a cleaning agent composition for removing a resin mask, which has a mass ratio D / C of 10 or more.
- the present disclosure comprises, in one aspect, the step of peeling the resin mask from the object to be cleaned to which the resin mask is attached by using the cleaning agent composition of the present disclosure, wherein the resin mask is subjected to at least one treatment of exposure and development. It relates to a cleaning method which is a negative type dry film resist which has been applied.
- the present disclosure relates to, in one aspect, a method for manufacturing an electronic component, which comprises a step of cleaning an electronic circuit board having a resin mask by using the cleaning agent composition of the present disclosure.
- the present disclosure relates to, in one aspect, the use of the cleaning agent composition of the present disclosure for peeling a resin mask from an object to be cleaned to which a resin mask is attached.
- FIG. 1A is a photograph showing an example of the appearance of the substrate to be cleaned
- FIG. 1B is a photograph showing an example of the appearance of the surface of the substrate after cleaning using the detergent compositions of Examples 1 and 2.
- 1C is a photograph showing an example of the appearance of the surface of the substrate after cleaning using the detergent composition of Comparative Example 1.
- the resin mask is formed by using a resist whose physical properties such as solubility in a developing solution are changed by light, an electron beam, or the like. Resists are roughly classified into negative type and positive type according to the reaction method with light and electron beam.
- the negative resist has the property that its solubility in a developing solution decreases when exposed, and the layer containing the negative resist (hereinafter, also referred to as “negative resist layer”) is formed by the exposed portion after exposure and development processing. Used as a resin mask.
- the positive resist has the property of increasing its solubility in a developing solution when exposed, and the layer containing the positive resist (hereinafter, also referred to as “positive resist layer”) is exposed to the exposed portion after exposure and development processing. It is removed and the unexposed area is used as a resin mask.
- a resin mask having such characteristics, it is possible to form fine connection portions of a circuit board such as metal wiring, metal pillars and solder bumps.
- the wiring becomes finer, it becomes difficult to remove the resin mask in the fine gaps, and the detergent composition is required to have high resin mask removing property.
- the detergent composition is required to have high resin mask removing property.
- wiring miniaturization is progressing. If the wiring width is narrowed, the electric resistance becomes large, heat is generated, and the function of the electronic device may be deteriorated.
- measures are taken to increase the height of the wiring. Therefore, the resin mask used for wiring formation becomes thicker, the contact area with the wiring increases, and the wiring interval due to miniaturization becomes narrower, which makes it difficult to remove the resin mask.
- the thick resin mask increases the distance from the resin mask surface to the substrate, and the reaction rate of photopolymerization due to exposure is higher than that of the surface. A difference occurs between the surface of the contact surface of the substrate, the reaction on the surface proceeds excessively, and the cleaning agent composition does not permeate from the surface of the resin mask unless the permeability is enhanced, and the resin mask becomes difficult to remove. Further, in the technique of Patent Document 1, the resin such as solder resist used for the electronic circuit board may be damaged.
- the present disclosure provides a cleaning agent composition for removing a resin mask, which is excellent in resin mask removing property, and a method for manufacturing an electronic component using the same, while suppressing damage to the substrate resin.
- a cleaning agent composition for removing a resin mask which is excellent in resin mask removing property, and a method for manufacturing an electronic component using the same, while suppressing damage to the substrate resin.
- a cleaning agent composition containing a specific alkaline compound and further containing water and an aromatic alcohol in a specific mass ratio damage to the substrate resin can be suppressed and a resin mask can be efficiently applied from the substrate surface. Based on the finding that it can be removed well.
- the present disclosure in one embodiment, comprises a quaternary ammonium hydroxide (component A), an amino alcohol (component B), an aromatic alcohol (component C) and water (component D), with respect to component C of component D.
- the present invention relates to a detergent composition for removing a resin mask having a mass ratio (D / C) of 10 or more (hereinafter, also referred to as “detergent composition of the present disclosure”).
- the present disclosure it is possible to provide a detergent composition having excellent resin mask removing property and capable of suppressing damage to the substrate resin. Then, by using the cleaning agent composition of the present disclosure for cleaning electronic parts such as electronic circuit boards having a resin mask, high quality electronic parts can be obtained with high yield.
- the details of the mechanism of action of the effect manifestation of the present disclosure are unclear, but it is presumed as follows.
- the quaternary ammonium hydroxide (component A) and amino alcohol (component B) permeate into the resin mask to promote the dissociation of the alkali-soluble resin contained in the resin mask, and further repel the charge generated by the dissociation. It is considered that the peeling of the resin mask is promoted by causing the above. Since the quaternary ammonium hydroxide (component A) and the amino alcohol (component B) have different penetration rates into the resin mask, the alkali-soluble resin on the surface of the resin mask is suppressed from being rapidly dissociated and penetrated.
- the aromatic alcohol (component C) permeates the resin mask together with the quaternary ammonium hydroxide (component A) and the amino alcohol (component B) to promote the permeation and further improve the peelability of the alkali-soluble resin. It is thought to promote. Further, the aromatic alcohol (component C) causes damage to the resin when it permeates into the resin used for the substrate. However, by increasing the proportion of water (component D), the detergent for the aromatic alcohol (component C) is used. It is considered that the dissolution into the resin becomes dominant and the penetration of the substrate into the resin is suppressed. However, the present disclosure may not be construed as being limited to this mechanism.
- the odor resin mask in the present disclosure is a mask for protecting the surface of a substance from treatments such as etching, plating, and heating, that is, a mask that functions as a protective film.
- the resin mask is subjected to at least one of the resist layer after the exposure and development steps, and the exposure and development (hereinafter, also referred to as “exposure and / or development treatment”). Examples thereof include a resist layer and a cured resist layer.
- the resin material forming the resin mask include a film-shaped photosensitive resin, a resist film, or a photoresist in one or more embodiments.
- a general-purpose resist film can be used.
- component A examples of the quaternary ammonium hydroxide (hereinafter, also referred to as “component A”) contained in the detergent composition of the present disclosure include a quaternary ammonium hydroxide represented by the following formula (I). Be done.
- the component A may be one kind or a combination of two or more kinds.
- R 1 , R 2 , R 3 and R 4 are each independently selected from at least one of a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group and a hydroxypropyl group. Is.
- the quaternary ammonium hydroxide represented by the formula (I) is a salt composed of a quaternary ammonium cation and a hydroxide, for example, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, or tetrapropyl.
- TMAH tetramethylammonium hydroxide
- TMAH tetraethylammonium hydroxide
- tetrapropyl tetrapropyl
- the content of component A at the time of use of the cleaning agent composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and 1% by mass or more from the viewpoint of improving the resin mask removability. Is more preferable, and from the same viewpoint, 5% by mass or less is preferable, 4% by mass or less is more preferable, and 3% by mass or less is further preferable. From the same viewpoint, the content of the component A at the time of use of the detergent composition of the present disclosure is preferably 0.1% by mass or more and 5% by mass or less, more preferably 0.5% by mass or more and 4% by mass or less. It is more preferably 1% by mass or more and 3% by mass or less. When the component A is a combination of two or more kinds, the content of the component A means the total content thereof.
- the "content of each component at the time of using the detergent composition” means the content of each component at the time of cleaning, that is, at the time when the use of the detergent composition for cleaning is started.
- the content of each component in the detergent composition of the present disclosure can be regarded as the blending amount of each component in the detergent composition of the present disclosure in one or more embodiments.
- component B amino alcohol (component B)
- Examples of the amino alcohol (alkanolamine) (hereinafter, also referred to as “component B”) contained in the detergent composition of the present disclosure include compounds represented by the following formula (II).
- the component B may be one kind or a combination of two or more kinds.
- R 5 represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group
- R 6 represents a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group
- R 7 indicates a hydroxyethyl group or a hydroxypropyl group.
- component B examples include monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, and diisopropanolamine.
- MEA monoethanolamine
- monoisopropanolamine N-methylmonoethanolamine
- N-methylisopropanolamine N-methylisopropanolamine
- N-ethylmonoethanolamine N-ethylisopropanolamine
- diethanolamine diethanolamine
- diisopropanolamine examples include monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, and diisopropanolamine.
- monoethanolamine (MEA) is preferable from the viewpoint of improving the resin mask removability.
- the content of component B at the time of use of the cleaning agent composition of the present disclosure is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, and 1% by mass or more from the viewpoint of improving the resin mask removability. More preferably, 4% by mass or more is further preferable, and from the same viewpoint, 30% by mass or less is more preferable, 15% by mass or less is more preferable, 10% by mass or less is further preferable, and 8% by mass or less is further preferable. From the same viewpoint, the content of component B at the time of use of the cleaning agent composition of the present disclosure is preferably 0.3% by mass or more and 30% by mass or less, more preferably 0.5% by mass or more and 15% by mass or less. It is more preferably 1% by mass or more and 10% by mass or less, and further preferably 4% by mass or more and 8% by mass or less. When the component B is a combination of two or more kinds, the content of the component B means the total content thereof.
- the aromatic alcohol (hereinafter, also referred to as “component C”) contained in the detergent composition of the present disclosure may be a compound having an aromatic ring and a hydroxyl group. From the viewpoint of improving the resin mask removability, the carbon number of the aromatic alcohol is preferably 7 or more, preferably 10 or less, and more preferably 9 or less.
- the component C may be one kind or a combination of two or more kinds.
- Examples of the component C include at least one selected from benzyl alcohol, phenethyl alcohol, 4-methylbenzyl alcohol, 4-ethylbenzyl alcohol, 2-phenyl-1-propanol, and 2-phenyl-2-propanol, and a resin.
- Benzyl alcohol is more preferable from the viewpoint of improving mask removability.
- the content of component C at the time of use of the cleaning agent composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, and 1% by mass or more from the viewpoint of improving the resin mask removability. Is more preferable, and from the viewpoint of suppressing damage to the substrate resin, 10% by mass or less is preferable, 9% by mass or less is more preferable, and 5% by mass or less is further preferable. From the viewpoint of improving the removability of the resin mask and suppressing damage to the substrate resin, the content of the component C in the cleaning agent composition of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, preferably 0.3% by mass or more and 10% by mass. More preferably, it is 0.3% by mass or more and 9% by mass or less, further preferably 1% by mass or more and 5% by mass or less.
- the content of the component C means the total content thereof.
- component D As the water contained in the cleaning agent composition of the present disclosure (hereinafter, also referred to as “component D”), ion-exchanged water, RO water, distilled water, pure water, ultrapure water and the like are used in one or more embodiments. Can be mentioned.
- the content of component D in the detergent composition of the present disclosure can be the residue excluding component A, component B, component C and optional components described later.
- the content of the component D when the cleaning agent composition of the present disclosure is used is preferably 60% by mass or more from the viewpoint of improving the resin mask removability, reducing the wastewater treatment load, and suppressing damage to the substrate resin. , 70% by mass or more is more preferable, 80% by mass or more is further preferable, and 99% by mass or less is preferable, 95% by mass or less is more preferable, and 90% by mass or less is further preferable from the viewpoint of improving the resin mask removability. ..
- the content of the component D in use of the detergent composition of the present disclosure is preferably 60% by mass or more and 99% by mass or less, more preferably 70% by mass or more and 95% by mass or less, and more preferably 80% by mass or more. 90% by mass or less is more preferable.
- the mass ratio D / C of the component D to the component C when the cleaning agent composition of the present disclosure is used is 10 or more, preferably 15 or more, from the viewpoint of improving the resin mask removability and suppressing damage to the substrate resin. , 20 or more is more preferable, and from the same viewpoint, 100 or less is preferable, 70 or less is more preferable, and 40 or less is further preferable. From the same viewpoint, the mass ratio D / C in the detergent composition of the present disclosure is preferably 10 or more and 100 or less, more preferably 15 or more and 70 or less, still more preferably 20 or more and 40 or less in one or more embodiments. ..
- the mass ratio D / C in the cleaning composition of the present disclosure is preferably 10 or more and 100 or less, more preferably 10 or more and 70 or less, and further preferably 10 or more and 40 or less in one or more embodiments.
- the detergent composition of the present disclosure may further contain an organic solvent (hereinafter, also referred to as "component E") in one or more embodiments.
- the component E may be one kind or a combination of two or more kinds.
- the component E includes at least one organic solvent selected from glycol ethers and aromatic ketones in one or more embodiments.
- the glycol ether include compounds having a structure in which ethylene glycol is added in an amount of 1 or more and 3 mol or less to an alcohol having 1 or more and 8 or less carbon atoms from the viewpoint of improving the resin mask removability.
- glycol ether examples include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether.
- BDG diethylene glycol monobutyl ether
- aromatic ketone examples include acetophenone and the like from the viewpoint of improving the resin mask removability.
- the content of the component E at the time of use of the cleaning agent composition of the present disclosure is preferably 0.1% by mass or more from the viewpoint of improving the resin mask removability. , 0.5% by mass or more is more preferable, 1% by mass or more is further preferable, 2% by mass or more is further preferable, and 10% by mass or less is preferable, and 7% by mass or less is preferable from the viewpoint of improving the resin mask removability. Is more preferable, 5% by mass or less is further preferable, and 4% by mass or less is further preferable.
- the content of the component E at the time of use of the cleaning agent composition of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 7% by mass or less. It is more preferably 1% by mass or more and 5% by mass or less, and even more preferably 2% by mass or more and 4% by mass or less.
- the content of the component E means the total content thereof.
- the detergent composition of the present disclosure may further contain other components, if necessary, in addition to the above-mentioned components A to E.
- other components include components that can be used in ordinary detergents, for example, alkaline agents other than component A and component B, amines other than component B, surfactants, chelating agents, thickeners, and the like. Dispersants, rust inhibitors, polymer compounds, solubilizers, antioxidants, preservatives, defoamers, antibacterial agents and the like can be mentioned.
- the detergent composition of the present disclosure may be substantially free of acids or ammonium salts thereof in one or more embodiments.
- Examples of the content of the acid or its ammonium salt at the time of using the detergent composition of the present disclosure include less than 0.3% by mass.
- the pH of the detergent composition of the present disclosure at the time of use is preferably 12 or more, more preferably 12.5 or more, and even more preferably 13 or more, from the viewpoint of improving the resin mask removability.
- the "pH at use” is the pH at 25 ° C. and can be measured using a pH meter. Specifically, it can be measured by the method described in Examples.
- the detergent composition of the present disclosure can be produced by blending the above-mentioned components A to D and, if necessary, the above-mentioned optional components (component E and other components) in one or more embodiments by a known method. ..
- the detergent composition of the present disclosure may be composed of at least the above-mentioned components A to D. Therefore, the present disclosure relates to a method for producing a detergent composition, which comprises at least a step of blending the components A to D.
- "blending" includes mixing components A to D and, if necessary, the above-mentioned optional components at the same time or in any order.
- the preferable blending amount of each component can be the same as the preferable content of each component of the detergent composition of the present disclosure described above.
- the detergent composition of the present disclosure may be prepared as a concentrate in which the amount of water (component D) is reduced as long as it does not cause separation, precipitation, etc. and impair storage stability.
- the concentrate of the detergent composition is preferably a concentrate having a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and preferably a concentrate having a dilution ratio of 30 times or less from the viewpoint of storage stability. ..
- the concentrate of the detergent composition can be diluted with water (component D) so that the components A to D and the optional components have the above-mentioned contents (that is, the contents at the time of washing) at the time of use. Further, the concentrate of the detergent composition can be used by adding each component separately at the time of use.
- "at the time of use” or "at the time of cleaning" of the detergent composition of the concentrate means a state in which the concentrate of the detergent composition is diluted.
- the cleaning agent composition of the present disclosure can be used in one or more embodiments for cleaning an object to be cleaned to which a resin mask is attached.
- the cleaning agent composition of the present disclosure can be used in one or more embodiments to peel off the resin mask from the object to be cleaned to which the resin mask is attached. That is, the present disclosure relates to, in one aspect, the use of the cleaning agent composition of the present disclosure for peeling a resin mask from an object to be cleaned to which a resin mask is attached.
- the object to be cleaned include electronic parts and their manufacturing intermediates.
- the electronic component include at least one component selected from a metal plate such as a printed circuit board, a wafer, a copper plate, and an aluminum plate.
- the manufacturing intermediate product is an intermediate product in the manufacturing process of the electronic component, and includes an intermediate product after the resin mask treatment.
- the object to be cleaned to which the resin mask is attached include an electronic circuit board having a cured resin mask in one or more embodiments.
- examples of the object to be cleaned to which the resin mask is attached include a glass epoxy multilayer substrate having a metal foil (for example, copper foil) on the surface and a substrate having a cured resin mask on the surface.
- the object to be cleaned to which the resin mask is attached is subjected to steps such as soldering and plating (copper plating, aluminum plating, nickel plating, etc.) using the resin mask in one or more embodiments.
- Examples thereof include electronic components in which wiring, connection terminals, and the like are formed on the surface of a substrate.
- an uncured resin mask on the surface of a glass epoxy multilayer substrate is subjected to at least one curing treatment of exposure and development, the uncured resin mask is removed, and then a circuit pattern is formed by a plating treatment.
- the substrate can be mentioned.
- a cured resin mask is present in the non-plated portion of the formed circuit pattern.
- the width of the fine wire portion by the plating treatment is preferably 1 ⁇ m or more, more preferably 5 ⁇ m or more, and preferably 50 ⁇ m or less, more preferably 30 ⁇ m or less, from the viewpoint of the cured resin mask removability.
- the width of the cured resin mask of the non-plated portion (between the circuit patterns) is preferably 1 ⁇ m or more, more preferably 5 ⁇ m or more, and preferably 50 ⁇ m or less, more preferably, from the viewpoint of the cured resin mask removability. Has a width of 30 ⁇ m or less.
- a substrate having a resin on the surface can be mentioned, and for example, a substrate having a solder resist can be mentioned. Accordingly, the present disclosure relates, in one aspect, to the use of the cleaning agent composition of the present disclosure as a cleaning agent in the manufacture of electronic components.
- the detergent composition of the present disclosure is suitable for cleaning a resin mask or an object to be cleaned to which a plating-treated and / or heat-treated resin mask is attached, from the viewpoint of cleaning effect.
- a resin mask for example, a negative type resin mask or a positive type resin mask may be used, and a negative type resin mask is preferable from the viewpoint that the effects of the present disclosure are easily exhibited.
- the negative resin mask include an exposed and / or developed negative dry film resist.
- the negative resin mask is formed by using a negative resist, and examples thereof include an exposed and / or developed negative resist layer.
- the positive resin mask is formed by using a positive resist, and examples thereof include an exposed and / or developed positive resist layer.
- the present disclosure comprises, in one aspect, the step of peeling the resin mask from the object to be cleaned to which the resin mask is attached by using the cleaning agent composition of the present disclosure, wherein the resin mask is subjected to at least one treatment of exposure and development.
- the present invention relates to a cleaning method (hereinafter, also referred to as “the cleaning method of the present disclosure”), which is a negative dry film resist applied.
- the step of peeling the resin mask from the object to be cleaned includes, in one or more embodiments, bringing the object to be cleaned to which the resin mask is attached into contact with the cleaning agent composition of the present disclosure.
- the resin mask can be efficiently removed while suppressing damage to the substrate resin.
- the substrate resin include solder resist.
- a cleaning agent composition is added.
- a method of contacting by immersing in a washing tub a method of injecting a cleaning agent composition into contact by spraying it (shower method), and an ultrasonic cleaning method of irradiating ultrasonic waves during immersion.
- the detergent composition of the present disclosure can be used as it is for cleaning without being diluted.
- the object to be cleaned include the above-mentioned object to be cleaned.
- the soaking time include 1 minute or more and 10 minutes or less, and further, 3 minutes or more and 6 minutes or less.
- the spray time include 1 minute or more and 10 minutes or less, and further, 3 minutes or more and 6 minutes or less.
- the cleaning method of the present disclosure may include, in one or more embodiments, a step of contacting the cleaning agent composition with the object to be cleaned, rinsing with water, and drying.
- rinsing method include running water rinsing.
- drying method include air blow drying.
- the cleaning method of the present disclosure may include, in one or more embodiments, a step of contacting the cleaning agent composition with the object to be cleaned and then rinsing with water.
- the cleaning method of the present disclosure it is preferable to irradiate ultrasonic waves at the time of contact between the cleaning agent composition of the present disclosure and the object to be cleaned, because the cleaning power of the cleaning agent composition of the present disclosure is easily exerted. It is more preferable that the sound wave has a relatively high frequency.
- the ultrasonic irradiation conditions are preferably, for example, 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.
- the temperature of the detergent composition is preferably 40 ° C. or higher, more preferably 50 ° C. or higher, and the organic resin-containing substrate, from the viewpoint that the cleaning power of the detergent composition of the present disclosure is easily exhibited. From the viewpoint of reducing the influence on the temperature, 70 ° C. or lower is preferable, and 60 ° C. or lower is more preferable.
- the present disclosure relates to, in one aspect, a method for manufacturing an electronic component, which comprises a step of peeling a resin mask from an object to be cleaned to which a resin mask is attached by using the cleaning agent composition of the present disclosure.
- the object to be cleaned include the above-mentioned object to be cleaned.
- the present disclosure relates to a method for manufacturing an electronic component, comprising a step of cleaning an electronic circuit board having a resin mask (hereinafter, also referred to as a “cleaning step”) using the cleaning agent composition of the present disclosure in another aspect. .
- the cleaning method in the cleaning step include the same method as the cleaning method of the present disclosure described above. According to the method for manufacturing an electronic component of the present disclosure, by performing cleaning using the cleaning agent composition of the present disclosure, the resin mask adhering to the electronic component can be effectively removed, so that the electronic component can be highly reliable. Manufacture becomes possible.
- kits The present disclosure relates, in one aspect, to a kit for use in any of the cleaning methods of the present disclosure and the method of manufacturing electronic components of the present disclosure (hereinafter, also referred to as "kit of the present disclosure").
- kit of the present disclosure is a kit for producing the detergent composition of the present disclosure in one or more embodiments. According to the kit of the present disclosure, it is possible to obtain a detergent composition having excellent resin mask removability while suppressing damage to the substrate resin.
- a solution containing component A (first solution), a solution containing component B (second solution), and a solution containing component C (third solution) are used.
- the second solution and the third solution further contains a part or all of the component D (water), and the first solution and the second solution
- the third solution include a kit (three-component cleaning agent composition) that is mixed at the time of use. After the first liquid, the second liquid and the third liquid are mixed, they may be diluted with water (component D) if necessary.
- Each of the first liquid, the second liquid, and the third liquid may contain the above-mentioned optional components, if necessary.
- a solution containing component A and component B (first solution) and a solution containing component C (second solution) are contained in a state in which they are not mixed with each other. At least one of the first solution and the second solution further contains a part or all of the component D (water), and the first solution and the second solution are mixed at the time of use. Things). After the first liquid and the second liquid are mixed, they may be diluted with component D (water) if necessary. Each of the first liquid and the second liquid may contain the above-mentioned optional components, if necessary.
- the test piece has a size of 120 mm ⁇ 120 mm, and is a resin mask which is a negative dry film resist cured between a fine wire circuit pattern formed by plating copper on the surface of a glass epoxy multilayer substrate and a thin copper wire circuit pattern formed.
- the thickness of the pattern is 50 ⁇ m, and the width of the thin wire portion is 20 ⁇ m. Further, it has an acrylic resin-based solder resist on the back surface of the substrate.
- FIG. 1A shows an example of an external photograph of the substrate to be cleaned before cleaning.
- the substrate to be cleaned shown in FIG. 1A is a glass epoxy substrate (pillar diameter: 200 ⁇ m, pitch: 400 ⁇ m) having a pillar pattern by copper plating, and a dry film resist is present in a portion other than the pillar pattern.
- the detergent composition of Comparative Example 1 when the substrate to be cleaned shown in FIG. 1A was washed with the detergent composition of Comparative Example 1, when the appearance of the substrate surface after cleaning was observed, as shown in FIG. 1C, the resist residue as a whole was present. It was seen.
- the cleaning agent composition of Examples 1 and 2 was used for cleaning, when the appearance of the substrate surface after cleaning was observed, as shown in FIG. 1B, no resist residue was observed, and the resin mask was efficiently used. It turned out that it could be removed.
- the detergent compositions of Examples 1 and 2 do not contain Component C, Comparative Examples 1 and 6, and Comparative Examples 2 to 3 which do not contain component A and have a mass ratio D / C of less than 10. It was found that the resin mask removability was excellent while suppressing damage to the substrate resin as compared with Comparative Example 5 containing no component A and Comparative Example 7 having a mass ratio D / C of less than 10.
- test piece used was a solid pattern substrate having a size of 35 mm ⁇ 35 mm and having a resin mask, which is a negative dry film, attached to the surface of a glass epoxy multilayer substrate having a copper foil on the surface and then being exposed and cured.
- the present disclosure it is possible to provide a detergent composition having excellent resin mask removability while suppressing damage to the substrate resin. Then, by using the cleaning agent composition of the present disclosure, it is possible to improve the performance and reliability of the manufactured electronic parts, and it is possible to improve the productivity of the semiconductor device.
Abstract
Description
また、特開2015-79244号公報(特許文献2)には、はんだバンプの加熱処理後の樹脂マスク層の除去の促進とはんだ腐食の抑制とを両立でき、はんだ接続信頼性を向上させうる洗浄剤として、洗浄剤組成物100質量部中、特定の第四級アンモニウム水酸化物を0.5質量部以上3.0質量部以下含有し、水溶性アミンを3.0質量部以上10.0質量部以下含有し、酸又はそのアンモニウム塩を0.3質量部以上2.5質量部以下含有し、水を50.0質量部以上95.0質量部以下含有する、樹脂マスク層用洗浄剤組成物が記載されている。 As the alkaline detergent for peeling, for example, Japanese Patent Application Laid-Open No. 2007-224165 (Patent Document 1) describes the total amount of the detergent as a dual-purpose cleaning agent capable of simultaneously cleaning the solder flux and the dry film resist. The amount of benzyl alcohol added was in the range of 5 to 94% by weight, the amine compound was in the range of 1 to 50% by weight, and water was in the range of 3 to 90% by weight. It is described as a dual-purpose cleaning agent characterized by the fact that it is used.
Further, in Japanese Patent Application Laid-Open No. 2015-7944 (Patent Document 2), it is possible to both promote the removal of the resin mask layer after the heat treatment of the solder bumps and suppress the solder corrosion, and the cleaning that can improve the solder connection reliability. As an agent, a specific quaternary ammonium hydroxide is contained in an amount of 0.5 parts by mass or more and 3.0 parts by mass or less, and a water-soluble amine is contained in an amount of 3.0 parts by mass or more and 10.0 parts by mass in 100 parts by mass of the cleaning agent composition. Cleaning agent for resin mask layer containing 0.3 parts by mass or less, acid or ammonium salt thereof in an amount of 0.3 parts by mass or more and 2.5 parts by mass or less, and water in an amount of 50.0 parts by mass or more and 95.0 parts by mass or less. The composition is described.
ここで、樹脂マスクとは、光や電子線等によって現像液に対する溶解性等の物性が変化するレジストを用いて形成されるものである。レジストは、光や電子線との反応方法から、ネガ型とポジ型に大きく分けられている。
ネガ型レジストは、露光されると現像液に対する溶解性が低下する特性を有し、ネガ型レジストを含む層(以下、「ネガ型レジスト層」ともいう)は、露光及び現像処理後に露光部が樹脂マスクとして使用される。
ポジ型レジストは、露光されると現像液に対する溶解性が増大する特性を有し、ポジ型レジストを含む層(以下、「ポジ型レジスト層」ともいう)は、露光及び現像処理後に露光部が除去され、未露光部が樹脂マスクとして使用される。このような特性を有する樹脂マスクを使用することで、金属配線、金属ピラーやハンダバンプといった回路基板の微細な接続部を形成することができる。 In forming fine wiring on a printed circuit board, etc., not only the residual resin mask, but also the cleaning agent composition to reduce the residual auxiliary agents contained in the solder, plating solution, etc. used for fine wiring and bump formation. High detergency is required for objects.
Here, the resin mask is formed by using a resist whose physical properties such as solubility in a developing solution are changed by light, an electron beam, or the like. Resists are roughly classified into negative type and positive type according to the reaction method with light and electron beam.
The negative resist has the property that its solubility in a developing solution decreases when exposed, and the layer containing the negative resist (hereinafter, also referred to as “negative resist layer”) is formed by the exposed portion after exposure and development processing. Used as a resin mask.
The positive resist has the property of increasing its solubility in a developing solution when exposed, and the layer containing the positive resist (hereinafter, also referred to as “positive resist layer”) is exposed to the exposed portion after exposure and development processing. It is removed and the unexposed area is used as a resin mask. By using a resin mask having such characteristics, it is possible to form fine connection portions of a circuit board such as metal wiring, metal pillars and solder bumps.
一方、電子デバイスの小型化、処理速度の高速化、消費電力を低減するため、配線の微細化が進んでいる。配線幅が狭くなると電気抵抗が大きくなり、発熱し、電子デバイスの機能低下を招くおそれがある。配線基板の面積を大きくすることなく電気抵抗を小さくするため、配線の高さを高くする対策が取られる。そのため、配線形成に用いる樹脂マスクは厚くなり配線との接触面積が増え、更に微細化に伴う配線間隔も狭くなることで樹脂マスクは除去しにくくなる。特に、微細配線を描画するためには高エネルギーの低波長光が用いられるが、樹脂マスクが厚いことで、樹脂マスク表面から基板までの距離が長くなり、露光による光重合の反応率が表面と基板接触面とで差異が生じ、表面の反応が過度に進行し、浸透性を強化しないと洗浄剤組成物が樹脂マスク表面から浸透せず、樹脂マスクは除去しにくくなる。
また、特許文献1の技術では、電子回路基板に用いられるソルダーレジスト等の樹脂にダメージが生じる場合があった。 However, as the wiring becomes finer, it becomes difficult to remove the resin mask in the fine gaps, and the detergent composition is required to have high resin mask removing property.
On the other hand, in order to reduce the size of electronic devices, increase the processing speed, and reduce power consumption, wiring miniaturization is progressing. If the wiring width is narrowed, the electric resistance becomes large, heat is generated, and the function of the electronic device may be deteriorated. In order to reduce the electrical resistance without increasing the area of the wiring board, measures are taken to increase the height of the wiring. Therefore, the resin mask used for wiring formation becomes thicker, the contact area with the wiring increases, and the wiring interval due to miniaturization becomes narrower, which makes it difficult to remove the resin mask. In particular, high-energy low-wavelength light is used to draw fine wiring, but the thick resin mask increases the distance from the resin mask surface to the substrate, and the reaction rate of photopolymerization due to exposure is higher than that of the surface. A difference occurs between the surface of the contact surface of the substrate, the reaction on the surface proceeds excessively, and the cleaning agent composition does not permeate from the surface of the resin mask unless the permeability is enhanced, and the resin mask becomes difficult to remove.
Further, in the technique of Patent Document 1, the resin such as solder resist used for the electronic circuit board may be damaged.
第四級アンモニウム水酸化物(成分A)及びアミノアルコール(成分B)は、樹脂マスク内に浸透して樹脂マスクに配合されているアルカリ可溶性樹脂の解離を促進し、更に解離によって生じる電荷の反発を起こすことによって樹脂マスクの剥離を促進すると考えられる。そして、第四級アンモニウム水酸化物(成分A)とアミノアルコール(成分B)では、樹脂マスクへの浸透速度が異なるため、樹脂マスク表面のアルカリ可溶性樹脂が急激に解離することを抑制し、浸透阻害となる樹脂マスク表面のみの電荷反発が抑制されると考えられる。
一方で、芳香族アルコール(成分C)は、第四級アンモニウム水酸化物(成分A)及びアミノアルコール(成分B)と共に樹脂マスクへ浸透し、浸透を促進してアルカリ可溶性樹脂の剥離性をさらに促進すると考えられる。また、芳香族アルコール(成分C)は、基板に用いられている樹脂に浸透すると樹脂にダメージを生じるところ、水(成分D)の割合を多くすることで芳香族アルコール(成分C)の洗浄剤への溶解が優位となり、基板の樹脂への浸透が抑制されると考えられる。
但し、本開示はこのメカニズムに限定して解釈されなくてもよい。 The details of the mechanism of action of the effect manifestation of the present disclosure are unclear, but it is presumed as follows.
The quaternary ammonium hydroxide (component A) and amino alcohol (component B) permeate into the resin mask to promote the dissociation of the alkali-soluble resin contained in the resin mask, and further repel the charge generated by the dissociation. It is considered that the peeling of the resin mask is promoted by causing the above. Since the quaternary ammonium hydroxide (component A) and the amino alcohol (component B) have different penetration rates into the resin mask, the alkali-soluble resin on the surface of the resin mask is suppressed from being rapidly dissociated and penetrated. It is considered that the charge repulsion only on the surface of the resin mask, which is an inhibitor, is suppressed.
On the other hand, the aromatic alcohol (component C) permeates the resin mask together with the quaternary ammonium hydroxide (component A) and the amino alcohol (component B) to promote the permeation and further improve the peelability of the alkali-soluble resin. It is thought to promote. Further, the aromatic alcohol (component C) causes damage to the resin when it permeates into the resin used for the substrate. However, by increasing the proportion of water (component D), the detergent for the aromatic alcohol (component C) is used. It is considered that the dissolution into the resin becomes dominant and the penetration of the substrate into the resin is suppressed.
However, the present disclosure may not be construed as being limited to this mechanism.
本開示の洗浄剤組成物に含まれる第四級アンモニウム水酸化物(以下、「成分A」ともいう)としては、例えば、下記式(I)で表される第4級アンモニウム水酸化物が挙げられる。成分Aは、1種でもよいし、2種以上の組合せでもよい。
Examples of the quaternary ammonium hydroxide (hereinafter, also referred to as “component A”) contained in the detergent composition of the present disclosure include a quaternary ammonium hydroxide represented by the following formula (I). Be done. The component A may be one kind or a combination of two or more kinds.
本開示の洗浄剤組成物中の各成分の含有量は、一又は複数の実施形態において、本開示の洗浄剤組成物中の各成分の配合量とみなすことができる。 In the present disclosure, the "content of each component at the time of using the detergent composition" means the content of each component at the time of cleaning, that is, at the time when the use of the detergent composition for cleaning is started.
The content of each component in the detergent composition of the present disclosure can be regarded as the blending amount of each component in the detergent composition of the present disclosure in one or more embodiments.
本開示の洗浄剤組成物に含まれるアミノアルコール(アルカノールアミン)(以下、「成分B」ともいう)としては、例えば、下記式(II)で表される化合物が挙げられる。成分Bは、1種でもよいし、2種以上の組合せもよい。
Examples of the amino alcohol (alkanolamine) (hereinafter, also referred to as “component B”) contained in the detergent composition of the present disclosure include compounds represented by the following formula (II). The component B may be one kind or a combination of two or more kinds.
本開示の洗浄剤組成物に含まれる芳香族アルコール(以下、「成分C」ともいう)としては、芳香環及び水酸基を有する化合物であればよい。樹脂マスク除去性向上の観点から、芳香族アルコールの炭素数は、7以上が好ましく、そして、10以下が好ましく、9以下がより好ましい。成分Cは、1種でもよいし、2種以上の組合せでもよい。 [Aromatic alcohol (component C)]
The aromatic alcohol (hereinafter, also referred to as “component C”) contained in the detergent composition of the present disclosure may be a compound having an aromatic ring and a hydroxyl group. From the viewpoint of improving the resin mask removability, the carbon number of the aromatic alcohol is preferably 7 or more, preferably 10 or less, and more preferably 9 or less. The component C may be one kind or a combination of two or more kinds.
本開示の洗浄剤組成物に含まれる水(以下、「成分D」ともいう)としては、一又は複数の実施形態において、イオン交換水、RO水、蒸留水、純水、超純水等が挙げられる。 [Water (component D)]
As the water contained in the cleaning agent composition of the present disclosure (hereinafter, also referred to as "component D"), ion-exchanged water, RO water, distilled water, pure water, ultrapure water and the like are used in one or more embodiments. Can be mentioned.
本開示の洗浄剤組成物は、一又は複数の実施形態において、有機溶剤(以下、「成分E」ともいう)をさらに含有することができる。成分Eは、1種でもよいし、2種以上の組合せでもよい。
成分Eとしては、一又は複数の実施形態において、グリコールエーテル及び芳香族ケトンから選ばれる少なくとも1種の有機溶剤が挙げられる。
グリコールエーテルとしては、樹脂マスク除去性向上の観点から、炭素数1以上8以下のアルコールにエチレングリコールが1以上3モル以下付加した構造を有する化合物が挙げられる。グリコールエーテルの具体例としては、ジエチレングリコールモノブチルエーテル(BDG)、エチレングリコールモノベンジルエーテル、ジエチレングリコールモノヘキシルエーテル、エチレングリコールモノフェニルエーテル、及びジエチレングリコールジエチルエーテルから選ばれる少なくとも1種が挙げられる。
芳香族ケトンとしては、樹脂マスク除去性向上の観点から、アセトフェノン等が挙げられる。 [Organic solvent (component E)]
The detergent composition of the present disclosure may further contain an organic solvent (hereinafter, also referred to as "component E") in one or more embodiments. The component E may be one kind or a combination of two or more kinds.
The component E includes at least one organic solvent selected from glycol ethers and aromatic ketones in one or more embodiments.
Examples of the glycol ether include compounds having a structure in which ethylene glycol is added in an amount of 1 or more and 3 mol or less to an alcohol having 1 or more and 8 or less carbon atoms from the viewpoint of improving the resin mask removability. Specific examples of the glycol ether include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether.
Examples of the aromatic ketone include acetophenone and the like from the viewpoint of improving the resin mask removability.
本開示の洗浄剤組成物は、前記成分A~E以外に、必要に応じてその他の成分をさらに含有することができる。その他の成分としては、通常の洗浄剤に用いられうる成分を挙げることができ、例えば、成分A及び成分B以外のアルカリ剤、成分B以外のアミン、界面活性剤、キレート剤、増粘剤、分散剤、防錆剤、高分子化合物、可溶化剤、酸化防止剤、防腐剤、消泡剤、抗菌剤等が挙げられる。 [Other ingredients]
The detergent composition of the present disclosure may further contain other components, if necessary, in addition to the above-mentioned components A to E. Examples of other components include components that can be used in ordinary detergents, for example, alkaline agents other than component A and component B, amines other than component B, surfactants, chelating agents, thickeners, and the like. Dispersants, rust inhibitors, polymer compounds, solubilizers, antioxidants, preservatives, defoamers, antibacterial agents and the like can be mentioned.
本開示の洗浄剤組成物は、一又は複数の実施形態において、前記成分A~D及び必要に応じて上述の任意成分(成分E及びその他の成分)を公知の方法で配合することにより製造できる。例えば、本開示の洗浄剤組成物は、少なくとも前記成分A~Dを配合してなるものとすることができる。したがって、本開示は、少なくとも前記成分A~Dを配合する工程を含む、洗浄剤組成物の製造方法に関する。本開示において「配合する」とは、成分A~D及び必要に応じて上述した任意成分を同時に又は任意の順に混合することを含む。本開示の洗浄剤組成物の製造方法において、各成分の好ましい配合量は、上述した本開示の洗浄剤組成物の各成分の好ましい含有量と同じとすることができる。 [Manufacturing method of detergent composition]
The detergent composition of the present disclosure can be produced by blending the above-mentioned components A to D and, if necessary, the above-mentioned optional components (component E and other components) in one or more embodiments by a known method. .. For example, the detergent composition of the present disclosure may be composed of at least the above-mentioned components A to D. Therefore, the present disclosure relates to a method for producing a detergent composition, which comprises at least a step of blending the components A to D. In the present disclosure, "blending" includes mixing components A to D and, if necessary, the above-mentioned optional components at the same time or in any order. In the method for producing the detergent composition of the present disclosure, the preferable blending amount of each component can be the same as the preferable content of each component of the detergent composition of the present disclosure described above.
本開示の洗浄剤組成物は、一又は複数の実施形態において、樹脂マスクが付着した被洗浄物の洗浄に使用されうる。本開示の洗浄剤組成物は、一又は複数の実施形態において、樹脂マスクが付着した被洗浄物から樹脂マスクを剥離するために使用することができる。すなわち、本開示は、一態様において、本開示の洗浄剤組成物の、樹脂マスクが付着した被洗浄物から樹脂マスクを剥離するための使用に関する。
被洗浄物としては、例えば、電子部品及びその製造中間物が挙げられる。電子部品としては、例えば、プリント基板、ウエハ、銅板及びアルミニウム板等の金属板から選ばれる少なくとも1つの部品が挙げられる。前記製造中間物は、電子部品の製造工程における中間製造物であって、樹脂マスク処理後の中間製造物を含む。
樹脂マスクが付着した被洗浄物としては、一又は複数の実施形態において、硬化した樹脂マスクを有する電子回路基板が挙げられる。例えば、樹脂マスクが付着した被洗浄物としては、表面に金属箔(例えば、銅箔)を有するガラスエポキシ多層基板の表面に硬化した樹脂マスクを有する基板が挙げられる。
樹脂マスクが付着した被洗浄物としては、一又は複数の実施形態において、樹脂マスクを使用した半田付けやメッキ処理(銅メッキ、アルミニウムメッキ、ニッケルメッキ等)等の処理を行う工程を経ることにより、配線や接続端子等が基板表面に形成された電子部品が挙げられる。具体的には、例えば、ガラスエポキシ多層基板の表面の非硬化の樹脂マスクを露光及び現像の少なくとも一方の硬化処理を行い、非硬化の樹脂マスクを除去した後、メッキ処理で回路パターンが形成された基板が挙げられる。形成された回路パターンの非メッキ部分には硬化した樹脂マスクが存在している。メッキ処理による細線部の幅は、硬化した樹脂マスク除去性の観点から、好ましくは1μm以上、より好ましくは5μm以上であり、そして、好ましくは50μm以下、より好ましくは30μm以下の幅を有する。非メッキ部分(回路パターンの間)の硬化した樹脂マスクの幅は、硬化した樹脂マスク除去性の観点から、好ましくは1μm以上、より好ましくは5μm以上であり、そして、好ましくは50μm以下、より好ましくは30μm以下の幅を有する。また、電子部品は、基板樹脂のダメージを抑制する効果を発現する観点から、表面に樹脂を有する基板が挙げられ、例えば、ソルダーレジストを有する基板が挙げられる。
したがって、本開示は、一態様において、本開示の洗浄剤組成物の、電子部品の製造における洗浄剤としての使用に関する。 [Item to be washed]
The cleaning agent composition of the present disclosure can be used in one or more embodiments for cleaning an object to be cleaned to which a resin mask is attached. The cleaning agent composition of the present disclosure can be used in one or more embodiments to peel off the resin mask from the object to be cleaned to which the resin mask is attached. That is, the present disclosure relates to, in one aspect, the use of the cleaning agent composition of the present disclosure for peeling a resin mask from an object to be cleaned to which a resin mask is attached.
Examples of the object to be cleaned include electronic parts and their manufacturing intermediates. Examples of the electronic component include at least one component selected from a metal plate such as a printed circuit board, a wafer, a copper plate, and an aluminum plate. The manufacturing intermediate product is an intermediate product in the manufacturing process of the electronic component, and includes an intermediate product after the resin mask treatment.
Examples of the object to be cleaned to which the resin mask is attached include an electronic circuit board having a cured resin mask in one or more embodiments. For example, examples of the object to be cleaned to which the resin mask is attached include a glass epoxy multilayer substrate having a metal foil (for example, copper foil) on the surface and a substrate having a cured resin mask on the surface.
The object to be cleaned to which the resin mask is attached is subjected to steps such as soldering and plating (copper plating, aluminum plating, nickel plating, etc.) using the resin mask in one or more embodiments. Examples thereof include electronic components in which wiring, connection terminals, and the like are formed on the surface of a substrate. Specifically, for example, an uncured resin mask on the surface of a glass epoxy multilayer substrate is subjected to at least one curing treatment of exposure and development, the uncured resin mask is removed, and then a circuit pattern is formed by a plating treatment. The substrate can be mentioned. A cured resin mask is present in the non-plated portion of the formed circuit pattern. The width of the fine wire portion by the plating treatment is preferably 1 μm or more, more preferably 5 μm or more, and preferably 50 μm or less, more preferably 30 μm or less, from the viewpoint of the cured resin mask removability. The width of the cured resin mask of the non-plated portion (between the circuit patterns) is preferably 1 μm or more, more preferably 5 μm or more, and preferably 50 μm or less, more preferably, from the viewpoint of the cured resin mask removability. Has a width of 30 μm or less. Further, as the electronic component, from the viewpoint of exhibiting the effect of suppressing damage to the substrate resin, a substrate having a resin on the surface can be mentioned, and for example, a substrate having a solder resist can be mentioned.
Accordingly, the present disclosure relates, in one aspect, to the use of the cleaning agent composition of the present disclosure as a cleaning agent in the manufacture of electronic components.
本開示は、一態様において、本開示の洗浄剤組成物を用いて、樹脂マスクが付着した被洗浄物から樹脂マスクを剥離する工程を含み、樹脂マスクが、露光及び現像の少なくとも一方の処理が施されたネガ型ドライフィルムレジストである、洗浄方法(以下、「本開示の洗浄方法」ともいう)に関する。本開示の洗浄方法において、被洗浄物から樹脂マスクを剥離する工程は、一又は複数の実施形態において、樹脂マスクが付着した被洗浄物を本開示の洗浄剤組成物に接触させることを含む。本開示の洗浄方法によれば、基板樹脂のダメージを抑制しつつ、樹脂マスクを効率よく除去できる。基板樹脂としては、例えば、ソルダーレジストが挙げられる。 [Washing method]
The present disclosure comprises, in one aspect, the step of peeling the resin mask from the object to be cleaned to which the resin mask is attached by using the cleaning agent composition of the present disclosure, wherein the resin mask is subjected to at least one treatment of exposure and development. The present invention relates to a cleaning method (hereinafter, also referred to as “the cleaning method of the present disclosure”), which is a negative dry film resist applied. In the cleaning method of the present disclosure, the step of peeling the resin mask from the object to be cleaned includes, in one or more embodiments, bringing the object to be cleaned to which the resin mask is attached into contact with the cleaning agent composition of the present disclosure. According to the cleaning method of the present disclosure, the resin mask can be efficiently removed while suppressing damage to the substrate resin. Examples of the substrate resin include solder resist.
本開示の洗浄方法は、一又は複数の実施形態において、洗浄剤組成物に被洗浄物を接触させた後、水ですすぐ工程を含むことができる。 The cleaning method of the present disclosure may include, in one or more embodiments, a step of contacting the cleaning agent composition with the object to be cleaned, rinsing with water, and drying. Examples of the rinsing method include running water rinsing. Examples of the drying method include air blow drying.
The cleaning method of the present disclosure may include, in one or more embodiments, a step of contacting the cleaning agent composition with the object to be cleaned and then rinsing with water.
本開示は、一態様において、本開示の洗浄剤組成物を用いて、樹脂マスクが付着した被洗浄物から樹脂マスクを剥離する工程を含む、電子部品の製造方法に関する。被洗浄物としては、上述した被洗浄物を挙げることができる。
本開示は、その他の態様において、本開示の洗浄剤組成物を用いて、樹脂マスクを有する電子回路基板を洗浄する工程(以下、「洗浄工程」ともいう)を含む、電子部品の製造方法に関する。前記洗浄工程における洗浄方法としては、上述した本開示の洗浄方法と同様の方法が挙げられる。
本開示の電子部品の製造方法によれば、本開示の洗浄剤組成物を用いて洗浄を行うことにより、電子部品に付着した樹脂マスクを効果的に除去できるため、信頼性の高い電子部品の製造が可能になる。 [Manufacturing method of electronic parts]
The present disclosure relates to, in one aspect, a method for manufacturing an electronic component, which comprises a step of peeling a resin mask from an object to be cleaned to which a resin mask is attached by using the cleaning agent composition of the present disclosure. Examples of the object to be cleaned include the above-mentioned object to be cleaned.
The present disclosure relates to a method for manufacturing an electronic component, comprising a step of cleaning an electronic circuit board having a resin mask (hereinafter, also referred to as a “cleaning step”) using the cleaning agent composition of the present disclosure in another aspect. .. Examples of the cleaning method in the cleaning step include the same method as the cleaning method of the present disclosure described above.
According to the method for manufacturing an electronic component of the present disclosure, by performing cleaning using the cleaning agent composition of the present disclosure, the resin mask adhering to the electronic component can be effectively removed, so that the electronic component can be highly reliable. Manufacture becomes possible.
本開示は、一態様において、本開示の洗浄方法及び本開示の電子部品の製造方法のいずれかに使用するためのキット(以下、「本開示のキット」ともいう)に関する。本開示のキットは、一又は複数の実施形態において、本開示の洗浄剤組成物を製造するためのキットである。本開示のキットによれば、基板樹脂のダメージを抑制しつつ、樹脂マスク除去性に優れる洗浄剤組成物を得ることができる。 [kit]
The present disclosure relates, in one aspect, to a kit for use in any of the cleaning methods of the present disclosure and the method of manufacturing electronic components of the present disclosure (hereinafter, also referred to as "kit of the present disclosure"). The kit of the present disclosure is a kit for producing the detergent composition of the present disclosure in one or more embodiments. According to the kit of the present disclosure, it is possible to obtain a detergent composition having excellent resin mask removability while suppressing damage to the substrate resin.
本開示のキットのその他の実施形態としては、成分A及び成分Bを含有する溶液(第1液)と、成分Cを含有する溶液(第2液)とを、相互に混合されない状態で含み、第1液及び第2液の少なくとも一方は、成分D(水)の一部又は全部を更に含有し、第1液と第2液とは使用時に混合される、キット(2液型洗浄剤組成物)が挙げられる。第1液と第2液とが混合された後、必要に応じて成分D(水)で希釈されてもよい。第1液及び第2液の各々には、必要に応じて上述した任意成分が含まれていてもよい。 As one embodiment of the kit of the present disclosure, a solution containing component A (first solution), a solution containing component B (second solution), and a solution containing component C (third solution) are used. , In a state where they are not mixed with each other, and at least one selected from the first solution, the second solution and the third solution further contains a part or all of the component D (water), and the first solution and the second solution Examples of the third solution include a kit (three-component cleaning agent composition) that is mixed at the time of use. After the first liquid, the second liquid and the third liquid are mixed, they may be diluted with water (component D) if necessary. Each of the first liquid, the second liquid, and the third liquid may contain the above-mentioned optional components, if necessary.
As another embodiment of the kit of the present disclosure, a solution containing component A and component B (first solution) and a solution containing component C (second solution) are contained in a state in which they are not mixed with each other. At least one of the first solution and the second solution further contains a part or all of the component D (water), and the first solution and the second solution are mixed at the time of use. Things). After the first liquid and the second liquid are mixed, they may be diluted with component D (water) if necessary. Each of the first liquid and the second liquid may contain the above-mentioned optional components, if necessary.
表1~2に示す各成分を表1~2に記載の配合量(質量%、有効分)で配合し、それを攪拌して混合することにより、実施例1~6及び比較例1~7の洗浄剤組成物を調製した。
表1~2に示す各洗浄剤組成物の25℃におけるpHは、pHメータ(東亜電波工業株式会社、HM-30G)を用いて測定した値であり、pHメータの電極を洗浄剤組成物に浸漬して3分後の数値である。 1. 1. Preparation of Detergent Compositions of Examples 1 to 6 and Comparative Examples 1 to 7 Each component shown in Tables 1 and 2 is blended in the blending amounts (mass%, effective content) shown in Tables 1 and 2, and the mixture is stirred. And mixed to prepare the detergent compositions of Examples 1 to 6 and Comparative Examples 1 to 7.
The pH of each detergent composition shown in Tables 1 and 2 at 25 ° C. is a value measured using a pH meter (Toa Denpa Kogyo Co., Ltd., HM-30G), and the electrode of the pH meter is used as the detergent composition. It is a numerical value 3 minutes after soaking.
(成分A)
TMAH:テトラメチルアンモニウムヒドロキシド[昭和電工株式会社製、濃度25%]
(非成分A)
KOH:水酸化カリウム[富士フイルム和光純薬株式会社]
(成分B)
MEA:モノエタノールアミン[富士フイルム和光純薬株式会社製、特級]
(成分C)
ベンジルアルコール[富士フイルム和光純薬株式会社製、特級]
(成分D)
水[オルガノ株式会社製純水装置G-10DSTSETで製造した1μS/cm以下の純粋]
(成分E)
BDG:ブチルジグリコール[日本乳化剤株式会社製、ジエチレングリコールモノブチルエーテル] The following were used to prepare the detergent compositions of Examples 1 to 6 and Comparative Examples 1 to 7.
(Component A)
TMAH: Tetramethylammonium hydroxide [manufactured by Showa Denko KK, concentration 25%]
(Non-ingredient A)
KOH: Potassium hydroxide [Fuji Film Wako Pure Chemical Industries, Ltd.]
(Component B)
MEA: Monoethanolamine [Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
(Component C)
Benzyl alcohol [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
(Component D)
Water [Pure water of 1 μS / cm or less manufactured by G-10DSTSET, a pure water device manufactured by Organo Corporation]
(Component E)
BDG: Butyl diglycol [manufactured by Nippon Embroidery Co., Ltd., diethylene glycol monobutyl ether]
調製した実施例1~2及び比較例1~3、5~7の洗浄剤組成物について下記評価を行った。 2. 2. Evaluation of Cleaning Agent Compositions of Examples 1 and 2 and Comparative Examples 1 to 3 and 5 to 7 The following evaluations were performed on the prepared cleaning agent compositions of Examples 1 and 2 and Comparative Examples 1 to 3 and 5 to 7. ..
3Lビーカーに、実施例1~2及び比較例1~3、5~7の各洗浄剤組成物を2kg添加して55℃に加温し、1流体ノズル(扇形)VVP9060(株式会社いけうち製)をスプレーノズルとして取り付けたボックス型スプレー洗浄機にて循環しながら、テストピースを3分間スプレー(圧力:0.15MPa、スプレー距離:10cm)する。そして、1Lガラスビーカーに水を1kg添加したすすぎ槽へ浸漬してすすいだ後、窒素ブローにて乾燥する。
光学顕微鏡「デジタルマイクロスコープVHX-2000」(株式会社キーエンス製)を用いて、洗浄試験を行った後のテストピースの細線部に残存する樹脂マスクの有無を300倍に拡大して目視観察し、残渣の有無を調べる。結果を表1に示した。
なお、テストピースは、120mm×120mmのサイズで、ガラスエポキシ多層基板の表面に銅のメッキで形成した細線回路パターンと形成した銅の細線回路パターン間に硬化したネガ型ドライフィルムレジストである樹脂マスクを有し、パターンの厚さ50μm、細線部の幅20μmである。また、基板の裏面にアクリル樹脂系のソルダーレジストを有している。 [Washing test method]
To a 3L beaker, 2 kg of each of the cleaning agent compositions of Examples 1 and 2 and Comparative Examples 1 to 3 and 5 to 7 was added and heated to 55 ° C., and a 1-fluid nozzle (fan shape) VVP9060 (manufactured by Ikeuchi Co., Ltd.) The test piece is sprayed for 3 minutes (pressure: 0.15 MPa, spray distance: 10 cm) while circulating in a box-type spray washer equipped as a spray nozzle. Then, it is immersed in a rinsing tank in which 1 kg of water is added to a 1 L glass beaker, rinsed, and then dried with a nitrogen blow.
Using an optical microscope "Digital Microscope VHX-2000" (manufactured by KEYENCE CO., LTD.), The presence or absence of the resin mask remaining on the fine wire of the test piece after the cleaning test was visually observed at a magnification of 300 times. Check for residues. The results are shown in Table 1.
The test piece has a size of 120 mm × 120 mm, and is a resin mask which is a negative dry film resist cured between a fine wire circuit pattern formed by plating copper on the surface of a glass epoxy multilayer substrate and a thin copper wire circuit pattern formed. The thickness of the pattern is 50 μm, and the width of the thin wire portion is 20 μm. Further, it has an acrylic resin-based solder resist on the back surface of the substrate.
図1Aに示される被洗浄基板を、比較例1の洗浄剤組成物を用いて洗浄した場合、洗浄後の基板表面の外観を観察すると、図1Cに示されるように、レジスト残渣が全体的にみられた。一方、実施例1~2の洗浄剤組成物を用いて洗浄した場合、洗浄後の基板表面の外観を観察すると、図1Bに示されるように、レジスト残渣がみられず、樹脂マスクを効率よく除去できていることが分かった。 Here, FIG. 1A shows an example of an external photograph of the substrate to be cleaned before cleaning. The substrate to be cleaned shown in FIG. 1A is a glass epoxy substrate (pillar diameter: 200 μm, pitch: 400 μm) having a pillar pattern by copper plating, and a dry film resist is present in a portion other than the pillar pattern.
When the substrate to be cleaned shown in FIG. 1A was washed with the detergent composition of Comparative Example 1, when the appearance of the substrate surface after cleaning was observed, as shown in FIG. 1C, the resist residue as a whole was present. It was seen. On the other hand, when the cleaning agent composition of Examples 1 and 2 was used for cleaning, when the appearance of the substrate surface after cleaning was observed, as shown in FIG. 1B, no resist residue was observed, and the resin mask was efficiently used. It turned out that it could be removed.
各洗浄剤組成物1kgに上記のテストピースを55℃で10分間浸漬する前後で、テストピースのソルダーレジスト部分の外観に生じるかを目視で確認し、以下のように判定する。結果を表1に示した。
<評価基準>
樹脂ダメージなし:変化は見られない。
樹脂ダメージあり:変化が見られる。 [Evaluation of damage to substrate resin]
Before and after immersing the above test piece in 1 kg of each detergent composition at 55 ° C. for 10 minutes, visually confirm whether it occurs in the appearance of the solder resist portion of the test piece, and determine as follows. The results are shown in Table 1.
<Evaluation criteria>
No resin damage: No change is seen.
Resin damage: Changes can be seen.
調製した実施例3~6及び比較例4の洗浄剤組成物について下記評価を行った。
[洗浄試験方法]
200mLガラスビーカーに、実施例3~6及び比較例4の各洗浄剤組成物を200g添加して温浴で60℃に加温し、攪拌せずにテストピースを浸漬する。テストピース表面の樹脂マスクが、各洗浄剤組成物に浸漬後、目視で全てテストピースから除去されるまでの時間(剥離時間)を測定する。結果を表2に示した。表2において、3分間浸漬しても樹脂マスクの全てが除去されなかった場合は「剥離しない」と表記した。
なお、テストピースは、35mm×35mmのサイズで、表面に銅箔を貼ったガラスエポキシ多層基板の表面にネガ型ドライフィルムである樹脂マスクを貼付後露光硬化されたベタパターン基板を用いた。 3. 3. Evaluation of Cleaning Agent Compositions of Examples 3 to 6 and Comparative Example 4 The prepared cleaning agent compositions of Examples 3 to 6 and Comparative Example 4 were evaluated as follows.
[Washing test method]
To a 200 mL glass beaker, 200 g of each detergent composition of Examples 3 to 6 and Comparative Example 4 is added, heated to 60 ° C. in a warm bath, and the test piece is immersed without stirring. The time (peeling time) until the resin mask on the surface of the test piece is completely removed from the test piece after being immersed in each cleaning agent composition is measured. The results are shown in Table 2. In Table 2, when all of the resin mask was not removed even after soaking for 3 minutes, it was described as "not peeled off".
The test piece used was a solid pattern substrate having a size of 35 mm × 35 mm and having a resin mask, which is a negative dry film, attached to the surface of a glass epoxy multilayer substrate having a copper foil on the surface and then being exposed and cured.
According to the present disclosure, it is possible to provide a detergent composition having excellent resin mask removability while suppressing damage to the substrate resin. Then, by using the cleaning agent composition of the present disclosure, it is possible to improve the performance and reliability of the manufactured electronic parts, and it is possible to improve the productivity of the semiconductor device.
Claims (15)
- 第四級アンモニウム水酸化物(成分A)、アミノアルコール(成分B)、芳香族アルコール(成分C)及び水(成分D)を含有し、
成分Dと成分Cとの質量比D/Cが10以上である、樹脂マスク剥離用洗浄剤組成物。 Contains quaternary ammonium hydroxide (component A), amino alcohol (component B), aromatic alcohol (component C) and water (component D).
A detergent composition for removing a resin mask, wherein the mass ratio D / C of the component D to the component C is 10 or more. - 成分Cの含有量が0.1質量%以上10質量%以下である、請求項1に記載の洗浄剤組成物。 The cleaning agent composition according to claim 1, wherein the content of component C is 0.1% by mass or more and 10% by mass or less.
- 成分Dの含有量が60質量%以上である、請求項1又は2に記載の洗浄剤組成物。 The detergent composition according to claim 1 or 2, wherein the content of the component D is 60% by mass or more.
- 成分Bの含有量が0.3質量%以上30質量%以下である、請求項1から3のいずれかに記載の洗浄剤組成物。 The detergent composition according to any one of claims 1 to 3, wherein the content of component B is 0.3% by mass or more and 30% by mass or less.
- 成分Aの含有量が0.1質量%以上5質量%以下である、請求項1から4のいずれかに記載の洗浄剤組成物。 The detergent composition according to any one of claims 1 to 4, wherein the content of the component A is 0.1% by mass or more and 5% by mass or less.
- 成分Bが、下記式(II)で表される化合物である、請求項1から5のいずれかに記載の洗浄剤組成物。
- 成分Dと成分Cとの質量比D/Cが10以上40以下である、請求項1から6のいずれかに記載の洗浄剤組成物。 The detergent composition according to any one of claims 1 to 6, wherein the mass ratio D / C of the component D to the component C is 10 or more and 40 or less.
- グリコールエーテル及び芳香族ケトンから選ばれる少なくとも1種の有機溶剤(成分E)をさらに含有する、請求項1から7のいずれかに記載の洗浄剤組成物。 The detergent composition according to any one of claims 1 to 7, further containing at least one organic solvent (component E) selected from glycol ethers and aromatic ketones.
- 成分Eの含有量が、0.1質量%以上10質量%以下である、請求項8に記載の洗浄剤組成物。 The cleaning agent composition according to claim 8, wherein the content of the component E is 0.1% by mass or more and 10% by mass or less.
- pHが12以上である、請求項1から9のいずれかに記載の洗浄剤組成物。 The detergent composition according to any one of claims 1 to 9, wherein the pH is 12 or more.
- 請求項1から10のいずれかに記載の洗浄剤組成物を用いて、樹脂マスクが付着した被洗浄物から樹脂マスクを剥離する工程を含み、
樹脂マスクが、露光及び現像の少なくとも一方の処理が施されたネガ型ドライフィルムレジストである、洗浄方法。 The step of peeling the resin mask from the object to be cleaned to which the resin mask is attached by using the cleaning agent composition according to any one of claims 1 to 10 is included.
A cleaning method, wherein the resin mask is a negative photoresist that has been subjected to at least one of exposure and development treatments. - 樹脂マスクが付着した被洗浄物の細線部の線幅が、1μm以上50μm以下である、請求項11に記載の洗浄方法。 The cleaning method according to claim 11, wherein the line width of the thin line portion of the object to be cleaned to which the resin mask is attached is 1 μm or more and 50 μm or less.
- 被洗浄物が、表面に金属箔を有するガラスエポキシ多層基板の表面に硬化した樹脂マスクを有する基板である、請求項11又は12に記載の洗浄方法。 The cleaning method according to claim 11 or 12, wherein the object to be cleaned is a substrate having a cured resin mask on the surface of a glass epoxy multilayer substrate having a metal foil on the surface.
- 請求項1から10のいずれかに記載の洗浄剤組成物を用いて、樹脂マスクを有する電子回路基板を洗浄する工程を含む、電子部品の製造方法。 A method for manufacturing an electronic component, which comprises a step of cleaning an electronic circuit board having a resin mask using the cleaning agent composition according to any one of claims 1 to 10.
- 請求項1から10のいずれかに記載の洗浄剤組成物の、樹脂マスクが付着した被洗浄物から樹脂マスクを剥離するための使用。
Use of the cleaning agent composition according to any one of claims 1 to 10 for peeling the resin mask from the object to be cleaned to which the resin mask is attached.
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JP2014078009A (en) * | 2012-10-08 | 2014-05-01 | Air Products And Chemicals Inc | Stripping and cleaning compositions for removal of thick film resist |
JP2014157339A (en) * | 2013-02-18 | 2014-08-28 | Lion Corp | Resist stripper composition |
JP2017044800A (en) * | 2015-08-25 | 2017-03-02 | 大日本印刷株式会社 | Method for forming thin film pattern |
WO2018047631A1 (en) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | Cleaning agent composition for resin mask detachment |
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JP2014078009A (en) * | 2012-10-08 | 2014-05-01 | Air Products And Chemicals Inc | Stripping and cleaning compositions for removal of thick film resist |
JP2014157339A (en) * | 2013-02-18 | 2014-08-28 | Lion Corp | Resist stripper composition |
JP2017044800A (en) * | 2015-08-25 | 2017-03-02 | 大日本印刷株式会社 | Method for forming thin film pattern |
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