JP2022043812A - Detergent composition for resin mask peeling - Google Patents
Detergent composition for resin mask peeling Download PDFInfo
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- JP2022043812A JP2022043812A JP2020149281A JP2020149281A JP2022043812A JP 2022043812 A JP2022043812 A JP 2022043812A JP 2020149281 A JP2020149281 A JP 2020149281A JP 2020149281 A JP2020149281 A JP 2020149281A JP 2022043812 A JP2022043812 A JP 2022043812A
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- component
- resin mask
- water
- cleaning
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- 239000000203 mixture Substances 0.000 title claims abstract description 125
- 239000011347 resin Substances 0.000 title claims abstract description 122
- 229920005989 resin Polymers 0.000 title claims abstract description 122
- 239000003599 detergent Substances 0.000 title claims abstract description 62
- 239000010949 copper Substances 0.000 claims abstract description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims abstract description 31
- 150000001412 amines Chemical class 0.000 claims abstract description 27
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 27
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 24
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 24
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims abstract description 20
- 239000012459 cleaning agent Substances 0.000 claims description 63
- 238000004140 cleaning Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000000908 ammonium hydroxide Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 125000003277 amino group Chemical group 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000004103 aminoalkyl group Chemical group 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 23
- 238000005260 corrosion Methods 0.000 abstract description 23
- 239000003513 alkali Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 20
- 238000007747 plating Methods 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- 150000003863 ammonium salts Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- -1 β-aminoethyl Chemical group 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- WJZPIORVERXPPR-UHFFFAOYSA-L tetramethylazanium;carbonate Chemical compound [O-]C([O-])=O.C[N+](C)(C)C.C[N+](C)(C)C WJZPIORVERXPPR-UHFFFAOYSA-L 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 2
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
- 235000012501 ammonium carbonate Nutrition 0.000 description 2
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 description 2
- 150000008365 aromatic ketones Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- OHMBHFSEKCCCBW-UHFFFAOYSA-N hexane-2,5-diol Chemical compound CC(O)CCC(C)O OHMBHFSEKCCCBW-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- 238000004065 wastewater treatment Methods 0.000 description 2
- XGIKILRODBEJIL-UHFFFAOYSA-N 1-(ethylamino)ethanol Chemical compound CCNC(C)O XGIKILRODBEJIL-UHFFFAOYSA-N 0.000 description 1
- XKQMKMVTDKYWOX-UHFFFAOYSA-N 1-[2-hydroxypropyl(methyl)amino]propan-2-ol Chemical compound CC(O)CN(C)CC(C)O XKQMKMVTDKYWOX-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- CYOIAXUAIXVWMU-UHFFFAOYSA-N 2-[2-aminoethyl(2-hydroxyethyl)amino]ethanol Chemical compound NCCN(CCO)CCO CYOIAXUAIXVWMU-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- SHAMRMCOVNDTCS-UHFFFAOYSA-M 2-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC(O)C[N+](C)(C)C SHAMRMCOVNDTCS-UHFFFAOYSA-M 0.000 description 1
- YSDSJBOULHYPCB-UHFFFAOYSA-M 2-hydroxypropyl(tripropyl)azanium hydroxide Chemical compound [OH-].OC(C[N+](CCC)(CCC)CCC)C YSDSJBOULHYPCB-UHFFFAOYSA-M 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- RKTGAWJWCNLSFX-UHFFFAOYSA-M bis(2-hydroxyethyl)-dimethylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(C)CCO RKTGAWJWCNLSFX-UHFFFAOYSA-M 0.000 description 1
- IUEJJWYUYRJJBJ-UHFFFAOYSA-M bis(2-hydroxyethyl)-dipropylazanium hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCO)CCO IUEJJWYUYRJJBJ-UHFFFAOYSA-M 0.000 description 1
- JYYOBHFYCIDXHH-UHFFFAOYSA-N carbonic acid;hydrate Chemical compound O.OC(O)=O JYYOBHFYCIDXHH-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MYRLVAHFNOAIAI-UHFFFAOYSA-M diethyl-bis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CC)CCO MYRLVAHFNOAIAI-UHFFFAOYSA-M 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- KGVNNTSVYGJCRV-UHFFFAOYSA-M ethyl-tris(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CC)(CCO)CCO KGVNNTSVYGJCRV-UHFFFAOYSA-M 0.000 description 1
- 150000002171 ethylene diamines Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical class [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 1
- MSSZNJYLEVGNAK-UHFFFAOYSA-M tetrakis(2-hydroxypropyl)azanium;hydroxide Chemical class [OH-].CC(O)C[N+](CC(C)O)(CC(C)O)CC(C)O MSSZNJYLEVGNAK-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- RBUVMOSJYGXQEK-UHFFFAOYSA-M triethyl(2-hydroxypropyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC(C)O RBUVMOSJYGXQEK-UHFFFAOYSA-M 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- FQSMVJXSANYLPV-UHFFFAOYSA-M tris(2-hydroxyethyl)-propylazanium;hydroxide Chemical class [OH-].CCC[N+](CCO)(CCO)CCO FQSMVJXSANYLPV-UHFFFAOYSA-M 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本開示は、樹脂マスク剥離用洗浄剤組成物、これを用いる基板の洗浄方法及び電子部品の製造方法に関する。 The present disclosure relates to a cleaning agent composition for removing a resin mask, a method for cleaning a substrate using the same, and a method for manufacturing an electronic component.
近年、パーソナルコンピュータや各種電子デバイスにおいては、低消費電力化、処理速度の高速化、小型化が進み、これらに搭載されるパッケージ基板などの配線は年々微細化が進んでいる。このような微細配線並びにピラーやバンプといった接続端子形成にはこれまでメタルマスク法が主に用いられてきたが、汎用性が低いことや配線等の微細化への対応が困難になってきたことから、他の新たな方法へと変わりつつある。 In recent years, in personal computers and various electronic devices, power consumption has been reduced, processing speed has been increased, and miniaturization has progressed, and wiring such as package substrates mounted on these has been miniaturized year by year. The metal mask method has been mainly used for the formation of such fine wiring and connection terminals such as pillars and bumps, but its versatility is low and it has become difficult to deal with miniaturization of wiring and the like. Is changing to other new methods.
新たな方法の一つとして、ドライフィルムレジストをメタルマスクに代えて厚膜樹脂マスクとして使用する方法が知られている。この樹脂マスクは最終的に剥離・除去されるが、剥離・除去等の洗浄に使用する洗浄剤として、アルカリ剤と水とを含む樹脂マスク剥離用洗浄剤が知られている。 As one of the new methods, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. This resin mask is finally peeled off and removed, but as a cleaning agent used for cleaning such as peeling and removal, a cleaning agent for removing a resin mask containing an alkaline agent and water is known.
例えば、特許文献1には、はんだバンプの加熱処理後の樹脂マスク層の除去の促進とはんだ腐食の抑制とを両立でき、はんだ接続信頼性を向上させうる洗浄剤として、特定の第四級アンモニウム水酸化物、水溶性アミン、酸又はそのアンモニウム塩、及び、水を含有する樹脂マスク層用洗浄剤組成物が記載されている。そして、実施例には酸のアンモニウム塩として、炭酸アンモニウムを用いたことが開示されている。 For example, Patent Document 1 describes a specific quaternary ammonium as a cleaning agent capable of both promoting removal of the resin mask layer after heat treatment of solder bumps and suppressing solder corrosion and improving solder connection reliability. A cleaning agent composition for a resin mask layer containing a hydroxide, a water-soluble amine, an acid or an ammonium salt thereof, and water is described. Then, it is disclosed that ammonium carbonate was used as the ammonium salt of the acid in the examples.
プリント基板等に微細配線を形成する上で、樹脂マスクの残存はもちろんのこと、微細配線やバンプ形成に用いられるはんだやめっき液等に含まれる助剤等の残存を低減するため、洗浄剤組成物には高い洗浄性が要求される。
ここで、樹脂マスクとは、光や電子線等によって現像液に対する溶解性等の物性が変化するレジストを用いて形成されるものである。レジストは、光や電子線との反応方法から、ネガ型とポジ型に大きく分けられている。ネガ型レジストは、露光されると現像液に対する溶解性が低下する特性を有し、ネガ型レジストを含む層(以下、「ネガ型レジスト層」ともいう)は、露光及び現像処理後に露光部が樹脂マスクとして使用される。ポジ型レジストは、露光されると現像液に対する溶解性が増大する特性を有し、ポジ型レジストを含む層(以下、「ポジ型レジスト層」ともいう)は、露光及び現像処理後に露光部が除去され、未露光部が樹脂マスクとして使用される。このような特性を有する樹脂マスクを使用することで、金属配線、金属ピラーやハンダバンプといった回路基板の微細な接続部を形成することができる。
In forming fine wiring on a printed circuit board, etc., not only the residual resin mask, but also the cleaning agent composition to reduce the residual auxiliary agents contained in the solder, plating solution, etc. used for fine wiring and bump formation. High detergency is required for objects.
Here, the resin mask is formed by using a resist whose physical properties such as solubility in a developing solution are changed by light, an electron beam, or the like. Resists are roughly classified into negative type and positive type according to the reaction method with light and electron beam. The negative resist has the property that its solubility in a developing solution decreases when exposed, and the layer containing the negative resist (hereinafter, also referred to as “negative resist layer”) is formed by the exposed portion after exposure and development processing. Used as a resin mask. The positive resist has the property of increasing its solubility in a developing solution when exposed, and the layer containing the positive resist (hereinafter, also referred to as “positive resist layer”) is exposed to the exposed portion after exposure and development processing. It is removed and the unexposed area is used as a resin mask. By using a resin mask having such characteristics, it is possible to form fine connection portions of a circuit board such as metal wiring, metal pillars and solder bumps.
しかしながら、配線が微細化するにつれて、微細な隙間にある樹脂マスクを除去することが困難になってきており、洗浄剤組成物には、高い樹脂マスク除去性が要求される。さらに、配線や接続端子の多くに使用される銅の腐食はパッケージ基板の品質及び価値の低下を招くことから、洗浄剤組成物には高い腐食の防止能が要求される。特許文献1に開示の技術では、高い樹脂マスク除去性やはんだの腐食抑制効果を有しているが、銅の腐食抑制効果は十分ではない。 However, as the wiring becomes finer, it becomes difficult to remove the resin mask in the fine gaps, and the detergent composition is required to have high resin mask removing property. Further, since the corrosion of copper used for many wirings and connection terminals causes deterioration of the quality and value of the package substrate, a high corrosion prevention ability is required for the cleaning agent composition. The technique disclosed in Patent Document 1 has a high resin mask removing property and a corrosion suppressing effect of solder, but the corrosion suppressing effect of copper is not sufficient.
そこで、本開示は、一態様において、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制できる樹脂マスク剥離用洗浄剤組成物及び基板の洗浄方法を提供する。 Therefore, the present disclosure provides, in one aspect, a cleaning agent composition for removing a resin mask and a method for cleaning a substrate, which can suppress copper corrosion without significantly impairing the removability (removability) of the resin mask.
本開示は、一態様において、水溶性アミン(成分A)、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)、炭酸イオン(成分C)及び水(成分D)を含有し、成分Cの濃度が0.3mol/L以上である、樹脂マスク剥離用洗浄剤組成物に関する。 The present disclosure, in one embodiment, comprises at least one alkaline agent (component B), carbonate ion (component C), selected from a water-soluble amine (component A), a quaternary ammonium hydroxide and an alkali metal hydroxide. The present invention relates to a cleaning agent composition for removing a resin mask, which contains water (component D) and has a concentration of component C of 0.3 mol / L or more.
本開示は、一態様において、水溶性アミン(成分A)と、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)と、炭酸塩(成分C´)と、水(成分D)とを配合してなり、成分C´の濃度が0.3mol/L以上である、樹脂マスク剥離用洗浄剤組成物に関する。 The present disclosure, in one embodiment, comprises a water-soluble amine (component A), at least one alkaline agent (component B) selected from quaternary ammonium hydroxides and alkali metal hydroxides, and a carbonate (component C). ') And water (component D) are blended, and the concentration of the component C'is 0.3 mol / L or more, and the present invention relates to a cleaning agent composition for removing a resin mask.
本開示は、一態様において、水溶性アミン(成分A)、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)、炭酸イオン(成分C)及び水(成分D)を含有し、成分Cの濃度が0.3mol/L以上である洗浄剤組成物を用いて、表面に銅含有金属層及び樹脂マスクを有する基板から樹脂マスクを剥離する工程を含む、基板の洗浄方法に関する。 The present disclosure, in one embodiment, comprises at least one alkaline agent (component B), carbonate ion (component C), selected from a water-soluble amine (component A), a quaternary ammonium hydroxide and an alkali metal hydroxide. A step of peeling a resin mask from a substrate having a copper-containing metal layer and a resin mask on the surface using a cleaning agent composition containing water (component D) and having a concentration of component C of 0.3 mol / L or more. Including, regarding the method of cleaning the substrate.
本開示は、一態様において、水溶性アミン(成分A)と、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)と、炭酸塩(成分C´)と、水(成分D)とを配合してなり、成分C´の濃度が0.3mol/L以上である洗浄剤組成物を用いて、表面に銅含有金属層及び樹脂マスクを有する基板から樹脂マスクを剥離する工程を含む、基板の洗浄方法に関する。 The present disclosure, in one embodiment, comprises a water-soluble amine (component A), at least one alkaline agent (component B) selected from a quaternary ammonium hydroxide and an alkali metal hydroxide, and a carbonate (component C). A substrate having a copper-containing metal layer and a resin mask on the surface using a cleaning agent composition composed of ´) and water (component D) having a concentration of component C ′ of 0.3 mol / L or more. The present invention relates to a method for cleaning a substrate, which comprises a step of peeling off a resin mask from the metal.
本開示は、一態様において、水溶性アミン(成分A)、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)、炭酸イオン(成分C)及び水(成分D)を含有し、成分Aのアミノ基をカチオン化させた洗浄剤組成物を用いて、表面に銅含有金属層及び樹脂マスクを有する基板から樹脂マスクを剥離する工程を含む、基板の洗浄方法に関する。 The present disclosure, in one embodiment, comprises at least one alkaline agent (component B), carbonate ion (component C), selected from a water-soluble amine (component A), a quaternary ammonium hydroxide and an alkali metal hydroxide. A substrate comprising a step of peeling a resin mask from a substrate having a copper-containing metal layer and a resin mask on the surface using a cleaning agent composition containing water (component D) and cationizing the amino group of the component A. Regarding the cleaning method of.
本開示は、一態様において、水溶性アミン(成分A)と、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)と、炭酸塩(成分C´)と、水(成分D)とを配合してなり、成分Aのアミノ基をカチオン化させた洗浄剤組成物を用いて、表面に銅含有金属層及び樹脂マスクを有する基板から樹脂マスクを剥離する工程を含む、基板の洗浄方法に関する。 The present disclosure, in one embodiment, comprises a water-soluble amine (component A), at least one alkaline agent (component B) selected from a quaternary ammonium hydroxide and an alkali metal hydroxide, and a carbonate (component C). A resin mask is obtained from a substrate having a copper-containing metal layer and a resin mask on the surface by using a cleaning agent composition obtained by blending ´) and water (component D) and cationizing the amino group of the component A. The present invention relates to a method for cleaning a substrate, including a step of peeling.
本開示は、一態様において、本開示の洗浄方法を用いて、表面に銅含有金属層及び樹脂マスクを有する基板を洗浄する工程を含む、電子部品の製造方法に関する。 The present disclosure relates to a method for manufacturing an electronic component, which comprises, in one aspect, a step of cleaning a substrate having a copper-containing metal layer and a resin mask on the surface by using the cleaning method of the present disclosure.
本開示によれば、一態様において、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制できる樹脂マスク剥離用洗浄剤組成物を提供できる。 According to the present disclosure, in one embodiment, it is possible to provide a detergent composition for removing a resin mask that can suppress copper corrosion without significantly impairing the resin mask removability (peeling property).
本開示は、水溶性アミン(成分A)と第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)と所定の濃度の炭酸イオン(成分C)と水(成分D)を含有する洗浄剤組成物、又は、成分Aと成分Bと所定濃度の炭酸塩(成分C´)と成分Dとを配合してなる樹脂マスク剥離用洗浄剤組成物を用いることで、銅の腐食を抑制しつつ、基板表面から樹脂マスクを効率よく除去できるという知見に基づく。 The present disclosure comprises at least one alkaline agent (component B) selected from a water-soluble amine (component A), a quaternary ammonium hydroxide and an alkali metal hydroxide, and a carbonate ion (component C) having a predetermined concentration. A cleaning agent composition containing water (component D) or a cleaning agent composition for removing a resin mask, which is a mixture of component A, component B, a carbonate (component C') having a predetermined concentration, and component D, is used. This is based on the finding that the resin mask can be efficiently removed from the substrate surface while suppressing the corrosion of copper.
本開示は、一態様において、水溶性アミン(成分A)、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)、炭酸イオン(成分C)及び水(成分D)を含有し、成分Cの濃度が0.3mol/L以上である樹脂マスク剥離用洗浄剤組成物、又は、成分Aと成分Bと炭酸塩(成分C´)と成分Dとを配合してなり、成分C´の濃度が0.3mol/L以上である樹脂マスク剥離用洗浄剤組成物(以下、これらをまとめて「本開示の洗浄剤組成物」ともいう)に関する。 The present disclosure, in one embodiment, comprises at least one alkaline agent (component B), carbonate ion (component C), selected from water-soluble amines (component A), quaternary ammonium hydroxides and alkali metal hydroxides. A cleaning agent composition for removing a resin mask containing water (component D) and having a concentration of component C of 0.3 mol / L or more, or a component A, a component B, a carbonate (component C'), and a component D. The present invention relates to a resin mask stripping cleaning agent composition having a concentration of component C'of 0.3 mol / L or more (hereinafter, these are collectively referred to as "the cleaning agent composition of the present disclosure").
本開示によれば、一又は複数の実施形態において、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制できる樹脂マスク剥離用洗浄剤組成物を提供できる。そして、本開示の洗浄剤組成物を用いることによって、高い収率で高品質の電子部品が得られうる。更に、本開示の洗浄剤組成物を用いることによって、微細な配線パターンを有する電子部品を効率よく製造できる。 According to the present disclosure, it is possible to provide a resin mask peeling detergent composition capable of suppressing copper corrosion without significantly impairing the resin mask removability (peeling property) in one or a plurality of embodiments. Then, by using the detergent composition of the present disclosure, high quality electronic components can be obtained in high yield. Further, by using the cleaning agent composition of the present disclosure, it is possible to efficiently manufacture an electronic component having a fine wiring pattern.
本開示の効果発現の作用メカニズムの詳細は不明な部分があるが、以下のように推定される。
本開示では、水溶性アミン(成分A)と第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)とを併用することにより、成分A及び成分Bが樹脂マスク内に浸透して樹脂マスクに配合されているアルカリ可溶性樹脂の解離を促進し、更に解離によって生じる電荷の反発を起こすことによって樹脂マスクの剥離を促進すると考えられる。一方で、水溶性アミン(成分A)は銅のエッチング(腐食)に関与していると考えられる。ここで、特定濃度の炭酸イオン(成分C)が成分Aのアミノ基をカチオン化させることで、成分Aと成分Cの錯体となり、成分Aによる銅のエッチングを抑制できると考えられる。
但し、本開示はこのメカニズムに限定して解釈されなくてもよい。
The details of the mechanism of action of the effect manifestation of the present disclosure are unclear, but it is presumed as follows.
In the present disclosure, by using a water-soluble amine (component A) in combination with at least one alkaline agent (component B) selected from a quaternary ammonium hydroxide and an alkali metal hydroxide, the components A and B are used in combination. Is considered to permeate into the resin mask and promote the dissociation of the alkali-soluble resin contained in the resin mask, and further promote the peeling of the resin mask by causing the repulsion of the charge generated by the dissociation. On the other hand, the water-soluble amine (component A) is considered to be involved in the etching (corrosion) of copper. Here, it is considered that the carbonate ion (component C) having a specific concentration cationizes the amino group of the component A to form a complex of the component A and the component C, and the etching of copper by the component A can be suppressed.
However, the present disclosure may not be construed as being limited to this mechanism.
本開示において剥離・除去される樹脂マスクとは、エッチング、めっき、加熱等の処理から物質表面を保護するためのマスク、すなわち、保護膜として機能するマスクである。樹脂マスクとしては、一又は複数の実施形態において、露光及び現像工程後のレジスト層、露光及び現像の少なくとも一方の処理が施された(以下、「露光及び/又は現像処理された」ともいう)レジスト層、あるいは、硬化したレジスト層が挙げられる。樹脂マスクを形成する樹脂材料としては、一又は複数の実施形態において、フィルム状の感光性樹脂、レジストフィルム、又はフォトレジストが挙げられる。レジストフィルムは汎用のものを使用できる。 The resin mask to be peeled off / removed in the present disclosure is a mask for protecting the surface of a substance from treatments such as etching, plating, and heating, that is, a mask that functions as a protective film. In one or more embodiments, the resin mask is subjected to at least one of the resist layer after the exposure and development steps, and the exposure and development (hereinafter, also referred to as “exposure and / or development treatment”). Examples thereof include a resist layer and a cured resist layer. Examples of the resin material forming the resin mask include a film-shaped photosensitive resin, a resist film, or a photoresist in one or more embodiments. A general-purpose resist film can be used.
[水溶性アミン(成分A)]
本開示の洗浄剤組成物は、水溶性アミン(以下、単に「成分A」ともいう)を含有する。成分Aとしては、一又は複数の実施形態において、例えば、下記式(I)で表されるアミン等が挙げられる。成分Aは、1種でもよいし、2種以上の組合せでもよい。本開示において、「水溶性」とは、水(20℃)に対して0.5g/100mL以上の溶解度、好ましくは2g/100mL以上の溶解度を有することをいう。
[Water-soluble amine (component A)]
The detergent composition of the present disclosure contains a water-soluble amine (hereinafter, also simply referred to as "component A"). Examples of the component A include amines represented by the following formula (I) in one or more embodiments. The component A may be one kind or a combination of two or more kinds. In the present disclosure, "water-soluble" means having a solubility of 0.5 g / 100 mL or more, preferably 2 g / 100 mL or more, in water (20 ° C.).
式(I)中、R1は水素原子、水酸基、炭素数1~6の炭化水素基、炭素数1~6のヒドロキシアルキル基、又は、炭素数1~6のアミノアルキル基であり、R2及びR3はそれぞれ同一又は異なり、水素原子、炭素数1~6の炭化水素基、炭素数1~6のヒドロキシアルキル基、又は、炭素数1~6のアミノアルキル基であり、R1、R2及びR3は同時に水素原子とはならない。 In the formula (I), R 1 is a hydrogen atom, a hydroxyl group, a hydrocarbon group having 1 to 6 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms, or an aminoalkyl group having 1 to 6 carbon atoms, and R 2 And R 3 are the same or different, respectively, and are a hydrogen atom, a hydrocarbon group having 1 to 6 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms, or an aminoalkyl group having 1 to 6 carbon atoms, and are R 1 and R. 2 and R 3 do not become hydrogen atoms at the same time.
式(I)で表されるアミンとしては、モノエタノールアミン、モノイソプロパノールアミン、N-メチルモノエタノールアミン、N-メチルイソプロパノールアミン、N-エチルモノエタノールアミン、N-エチルイソプロパノールアミン、ジエタノールアミン、ジイソプロパノールアミン、N,N-ジメチルモノエタノールアミン、N-ジメチルモノイソプロパノールアミン、N-メチルジエタノールアミン、N-メチルジイソプロパノールアミン、N,N-ジエチルモノエタノールアミン、N-ジエチルモノイソプロパノールアミン、N-エチルジエタノールアミン、N-エチルジイソプロパノールアミン、N-(β-アミノエチル)エタノールアミン、N-(β-アミノエチル)イソプロパノールアミン、N-(β-アミノエチル)ジエタノールアミン、N-(β-アミノエチル)ジイソプロパノールアミン、エチレンジアミン及びジエチレントリアミンから選ばれる少なくとも1種が挙げられる。これらの中でも、樹脂マスク除去性(剥離性)向上の観点から、モノエタノールアミン及びジエタノールアミンが好ましく、モノエタノールアミンがより好ましい。 Examples of the amine represented by the formula (I) include monoethanolamine, monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine and diisopropanol. Amine, N, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine , N-Ethyldiisopropanolamine, N- (β-aminoethyl) ethanolamine, N- (β-aminoethyl) isopropanolamine, N- (β-aminoethyl) diethanolamine, N- (β-aminoethyl) diisopropanol At least one selected from amines, ethylenediamines and diethylenetriamines may be mentioned. Among these, monoethanolamine and diethanolamine are preferable, and monoethanolamine is more preferable, from the viewpoint of improving the resin mask removability (peeling property).
成分Aとしては、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制する観点から、モノエタノールアミン、N,N-ジエチルエタノールアミン、N-メチルエタノールアミン、エチルアミノエタノール、及びプロパンジアミンから選ばれる少なくとも1種が挙げられ、これらの中でも、モノエタノールアミンが好ましい。 As the component A, monoethanolamine, N, N-diethylethanolamine, N-methylethanolamine, ethylaminoethanol, and At least one selected from propanediamine is mentioned, and among these, monoethanolamine is preferable.
本開示の洗浄剤組成物の使用時における成分Aの含有量は、樹脂マスク除去性(剥離性)の観点から、2質量%以上が好ましく、3質量%以上がより好ましく、5質量%以上が更に好ましく、そして、銅腐食抑制の観点から、10質量%以下が好ましく、9質量%以下がより好ましく、7質量%以下が更に好ましい。より具体的には、成分Aの含有量は、2質量%以上10質量%以下が好ましく、3質量%以上9質量%以下がより好ましく、5質量%以上7質量%以下が更に好ましい。成分Aが2種以上の組合せである場合、成分Aの含有量はそれらの合計含有量をいう。 The content of the component A at the time of use of the cleaning agent composition of the present disclosure is preferably 2% by mass or more, more preferably 3% by mass or more, and 5% by mass or more from the viewpoint of resin mask removability (peeling property). Further, from the viewpoint of suppressing copper corrosion, 10% by mass or less is preferable, 9% by mass or less is more preferable, and 7% by mass or less is further preferable. More specifically, the content of the component A is preferably 2% by mass or more and 10% by mass or less, more preferably 3% by mass or more and 9% by mass or less, and further preferably 5% by mass or more and 7% by mass or less. When the component A is a combination of two or more kinds, the content of the component A means the total content thereof.
本開示において「洗浄剤組成物の使用時における各成分の含有量」とは、洗浄時、すなわち、洗浄剤組成物の洗浄への使用を開始する時点での各成分の含有量をいう。 In the present disclosure, the "content of each component at the time of use of the detergent composition" means the content of each component at the time of cleaning, that is, at the time when the use of the detergent composition for cleaning is started.
[アルカリ剤(成分B)]
本開示の洗浄剤組成物は、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(以下、単に「成分B」ともいう)を含有する。成分Bは、1種でもよいし、2種以上の組合せでもよい。
[Alkaline agent (component B)]
The cleaning agent composition of the present disclosure contains at least one alkaline agent (hereinafter, also simply referred to as “component B”) selected from a quaternary ammonium hydroxide and an alkali metal hydroxide. The component B may be one kind or a combination of two or more kinds.
第4級アンモニウム水酸化物としては、下記式(II)で表される第4級アンモニウム水酸化物が挙げられる。
上記式(II)において、R4、R5、R6及びR7はそれぞれ独立に、メチル基、エチル基、プロピル基、ヒドロキシメチル基、ヒドロキシエチル基及びヒドロキシプロピル基から選ばれる少なくとも1種である。 In the above formula (II), R 4 , R 5 , R 6 and R 7 are each independently selected from at least one selected from a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group and a hydroxypropyl group. be.
式(II)で表される第4級アンモニウム水酸化物としては、例えば、第4級アンモニウムカチオンとヒドロキシドとからなる塩等が挙げられる。第4級アンモニウム水酸化物の具体例としては、テトラメチルアンモニウムヒドロキシド(TMAH)、テトラエチルアンモニウムヒドロキシド、テトラプロピルアンモニウムヒドロキシド、2-ヒドロキシエチルトリメチルアンモニウムヒドロキシド(コリン)、2-ヒドロキシエチルトリエチルアンモニウムヒドロキシド、2-ヒドロキシエチルトリプロピルアンモニウムヒドロキシド、2-ヒドロキシプロピルトリメチルアンモニウムヒドロキシド、2-ヒドロキシプロピルトリエチルアンモニウムヒドロキシド、2-ヒドロキシプロピルトリプロピルアンモニウムヒドロキシド、ジメチルビス(2-ヒドロキシエチル)アンモニウムヒドロキシド、ジエチルビス(2-ヒドロキシエチル)アンモニウムヒドロキシド、ジプロピルビス(2-ヒドロキシエチル)アンモニウムヒドロキシド、トリス(2-ヒドロキシエチル)メチルアンモニウムヒドロキシド、トリス(2-ヒドロキシエチル)エチルアンモニウムヒドロキシド、トリス(2-ヒドロキシエチル)プロピルアンモニウムヒドロキシド、テトラキス(2-ヒドロキシエチル)アンモニウムヒドロキシド、及びテトラキス(2-ヒドロキシプロピル)アンモニウムヒドロキシドから選ばれる少なくとも1種が挙げられる。これらの中でも、樹脂マスク除去性(剥離性)向上の観点から、テトラメチルアンモニウムヒドロキシド及びテトラエチルアンモニウムヒドロキシドが好ましく、テトラメチルアンモニウムヒドロキシドがより好ましい。 Examples of the quaternary ammonium hydroxide represented by the formula (II) include a salt composed of a quaternary ammonium cation and a hydroxide. Specific examples of the quaternary ammonium hydroxide are tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), and 2-hydroxyethyltriethyl. Ammonium Hydroxide, 2-Hydroxyethyl Tripropylammonium Hydroxide, 2-Hydroxypropyltrimethylammonium Hydroxide, 2-Hydroxypropyltriethylammonium Hydroxide, 2-Hydroxypropyltripropylammonium Hydroxide, Dimethylbis (2-Hydroxyethyl) Ammonium Hydroxide, Diethylbis (2-Hydroxyethyl) Ammonium Hydroxide, Dipropylbis (2-Hydroxyethyl) Ammonium Hydroxide, Tris (2-Hydroxyethyl) Methylammonium Hydroxide, Tris (2-Hydroxyethyl) Ethylammonium Hydroxide, Included are at least one selected from tris (2-hydroxyethyl) propylammonium hydroxides, tetrakis (2-hydroxyethyl) ammonium hydroxides, and tetrakis (2-hydroxypropyl) ammonium hydroxides. Among these, tetramethylammonium hydroxide and tetraethylammonium hydroxide are preferable, and tetramethylammonium hydroxide is more preferable, from the viewpoint of improving the resin mask removability (peeling property).
アルカリ金属水酸化物としては、一又は複数の実施形態において、水酸化ナトリウム、水酸化カリウム等が挙げられる。 Examples of the alkali metal hydroxide include sodium hydroxide, potassium hydroxide and the like in one or more embodiments.
本開示の洗浄剤組成物の使用時における成分Bの含有量は、樹脂マスク除去性(剥離性)の観点から、0.5質量%以上が好ましく、3質量%以上がより好ましい。成分Bが2種以上の組合せである場合、成分Bの含有量はそれらの合計含有量をいう。
本開示の洗浄剤組成物の使用時における成分Bの含有量は、本発明の効果が飽和する観点から、10質量%以下が好ましい。
The content of component B at the time of use of the detergent composition of the present disclosure is preferably 0.5% by mass or more, more preferably 3% by mass or more, from the viewpoint of resin mask removability (peeling property). When the component B is a combination of two or more kinds, the content of the component B means the total content thereof.
The content of component B at the time of use of the detergent composition of the present disclosure is preferably 10% by mass or less from the viewpoint of saturated the effect of the present invention.
[炭酸イオン:(成分C)]
本開示の洗浄剤組成物は、一又は複数の実施形態において、炭酸イオン(CO3
2-)(以下、単に「成分C」ともいう)を含有する。本開示の洗浄剤組成物は、その他の一又は複数の実施形態において、成分Cの供給源である炭酸塩(以下、単に「成分C´」ともいう)を配合してなる。本開示の洗浄剤組成物において、炭酸イオン(成分C)が成分Aのアミノ基をカチオン化させることで、銅のエッチングを抑制できると考えられる。したがって、本開示の洗浄剤組成物は、一又は複数の実施形態において、成分A、成分B、成分C及び成分Dを含有し、成分Aのアミノ基をカチオン化させた洗浄剤組成物である。本開示の洗浄剤組成物は、その他の一又は複数の実施形態において、成分Aと成分Bと成分C´と成分Dとを配合してなり、成分Aのアミノ基をカチオン化させた洗浄剤組成物である。
[Carbonate ion: (component C)]
The detergent composition of the present disclosure contains carbonate ions ( CO 32- ) (hereinafter, also simply referred to as "component C") in one or more embodiments. The detergent composition of the present disclosure comprises, in one or more other embodiments, a carbonate (hereinafter, also simply referred to as "component C'") which is a source of component C. In the detergent composition of the present disclosure, it is considered that the etching of copper can be suppressed by cationizing the amino group of the component A by the carbonate ion (component C). Therefore, the detergent composition of the present disclosure is, in one or more embodiments, a detergent composition containing component A, component B, component C and component D, in which the amino group of component A is cationized. .. In one or more other embodiments, the detergent composition of the present disclosure is a detergent in which component A, component B, component C'and component D are blended, and the amino group of component A is cationized. It is a composition.
成分Cの供給源である成分C´としては、一又は複数の実施形態において、炭酸イオンを供給できる化合物であれば特に限定されないが、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制する観点から、アルカリ金属の炭酸塩、アルカリ土類金属の炭酸塩、第4級アンモニウムの炭酸塩等が挙げられる。第4級アンモニウムの炭酸塩としては、例えば、炭酸テトラアルキルアンモニウムが挙げられ、具体的には、炭酸テトラメチルアンモニウム等が挙げられる。成分Cの供給源は、1種でもよいし、2種以上の組合せでもよい。 The component C'which is the source of the component C is not particularly limited as long as it is a compound capable of supplying carbonate ions in one or a plurality of embodiments, but copper is not significantly impaired in the resin mask removability (peeling property). From the viewpoint of suppressing corrosion, carbonates of alkali metals, carbonates of alkaline earth metals, carbonates of quaternary ammonium and the like can be mentioned. Examples of the carbonate of the quaternary ammonium include tetraalkylammonium carbonate, and specific examples thereof include tetramethylammonium carbonate and the like. The source of the component C may be one kind or a combination of two or more kinds.
本開示の洗浄剤組成物の使用時における成分C又は成分C´の濃度(mol/L)は、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制する観点から、0.3mol/L以上であって、0.8mol/L以上が好ましく、そして、同様の観点から、3mol/L以下が好ましく、2mol/L以下がより好ましい。より具体的には、成分C又は成分C´の濃度(mol/L)は、0.3mol/L以上3mol/L以下が好ましく、0.8mol/L以上2mol/L以下がより好ましい。本開示において「洗浄剤組成物の使用時における各成分の濃度」とは、洗浄時、すなわち、洗浄剤組成物の洗浄への使用を開始する時点での各成分の濃度をいう。 The concentration (mol / L) of the component C or the component C'when using the cleaning agent composition of the present disclosure is 0. It is preferably 3 mol / L or more, preferably 0.8 mol / L or more, and from the same viewpoint, 3 mol / L or less is preferable, and 2 mol / L or less is more preferable. More specifically, the concentration (mol / L) of the component C or the component C'is preferably 0.3 mol / L or more and 3 mol / L or less, and more preferably 0.8 mol / L or more and 2 mol / L or less. In the present disclosure, the "concentration of each component at the time of using the detergent composition" means the concentration of each component at the time of cleaning, that is, at the time when the use of the detergent composition for cleaning is started.
本開示の洗浄剤組成物の使用時における成分Aに対する成分Cのモル比C/Aは、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制する観点から、0.2以上が好ましく、0.6以上がより好ましい。そして、同様の観点から、3以下が好ましく、2以下がより好ましい。より具体的には、モル比C/Aは、0.2以上3以下が好ましく、0.6以上2以下がより好ましい。本開示の洗浄剤組成物の使用時における成分Aに対する成分C´のモル比C´/Aは、上述したモル比C/Aと同じとすることができる。 The molar ratio C / A of component C to component A during use of the detergent composition of the present disclosure is 0.2 or more from the viewpoint of suppressing copper corrosion without significantly impairing the resin mask removability (peeling property). Is preferable, and 0.6 or more is more preferable. From the same viewpoint, 3 or less is preferable, and 2 or less is more preferable. More specifically, the molar ratio C / A is preferably 0.2 or more and 3 or less, and more preferably 0.6 or more and 2 or less. The molar ratio C ′ / A of the component C ′ to the component A at the time of using the detergent composition of the present disclosure can be the same as the above-mentioned molar ratio C / A.
本開示の洗浄剤組成物の使用時における成分Bに対する成分Cのモル比C/Bは、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制する観点から、1以上が好ましく、1.5以上がより好ましい。そして、同様の観点から、5以下が好ましく、3以下がより好ましい。より具体的には、モル比C/Bは、1以上5以下が好ましく、1.5以上3以下がより好ましい。本開示の洗浄剤組成物の使用時における成分Bに対する成分C´のモル比C´/Bは、上述したモル比C/Bと同じとすることができる。 The molar ratio C / B of component C to component B during use of the detergent composition of the present disclosure is preferably 1 or more from the viewpoint of suppressing copper corrosion without significantly impairing the resin mask removability (peeling property). , 1.5 or more is more preferable. From the same viewpoint, 5 or less is preferable, and 3 or less is more preferable. More specifically, the molar ratio C / B is preferably 1 or more and 5 or less, and more preferably 1.5 or more and 3 or less. The molar ratio C ′ / B of the component C ′ to the component B at the time of using the detergent composition of the present disclosure can be the same as the above-mentioned molar ratio C / B.
[水(成分D)]
本開示の洗浄剤組成物における水(以下、「成分D」ともいう)としては、一又は複数の実施形態において、イオン交換水、RO水、蒸留水、純水、超純水等が挙げられる。
[Water (component D)]
Examples of the water (hereinafter, also referred to as “component D”) in the cleaning agent composition of the present disclosure include ion-exchanged water, RO water, distilled water, pure water, ultrapure water, and the like in one or more embodiments. ..
本開示の洗浄剤組成物中の成分Dの含有量は、成分A、成分B、成分C及び後述する任意成分を除いた残余とすることができる。
具体的には、本開示の洗浄剤組成物の使用時における成分Dの含有量は、樹脂マスク除去性(剥離性)向上、銅腐食抑制、排水処理負荷低減、及び基板に対する影響低減の観点から、50質量%以上が好ましく、60質量%以上がより好ましく、70質量%以上が更に好ましく、そして、樹脂マスク除去性(剥離性)向上の観点から、95質量%以下が好ましく、90質量%以下がより好ましく、85質量%以下が更に好ましい。より具体的には、本開示の洗浄剤組成物の使用時における成分Dの含有量は、50質量%以上95質量%以下が好ましく、60質量%以上90質量%以下がより好ましく、70質量%以上85質量%以下が更に好ましい。
The content of component D in the detergent composition of the present disclosure can be a residue excluding component A, component B, component C and optional components described later.
Specifically, the content of the component D at the time of use of the cleaning agent composition of the present disclosure is from the viewpoint of improving the resin mask removability (peeling property), suppressing copper corrosion, reducing the wastewater treatment load, and reducing the influence on the substrate. , 50% by mass or more, more preferably 60% by mass or more, further preferably 70% by mass or more, and from the viewpoint of improving the resin mask removability (peeling property), 95% by mass or less is preferable, and 90% by mass or less. Is more preferable, and 85% by mass or less is further preferable. More specifically, the content of the component D at the time of use of the detergent composition of the present disclosure is preferably 50% by mass or more and 95% by mass or less, more preferably 60% by mass or more and 90% by mass or less, and more preferably 70% by mass. It is more preferably 85% by mass or less.
本開示の洗浄剤組成物の使用時における成分A、成分B、成分C及び成分Dの合計量は、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制する観点から、50質量%以上が好ましく、60質量%以上がより好ましく、70質量%以上が更に好ましく、80質量%以上が更に好ましく、90質量%以上が更に好ましい。 The total amount of the component A, the component B, the component C, and the component D at the time of using the cleaning agent composition of the present disclosure is 50 from the viewpoint of suppressing copper corrosion without significantly impairing the resin mask removability (peeling property). By mass or more is preferable, 60% by mass or more is more preferable, 70% by mass or more is further preferable, 80% by mass or more is further preferable, and 90% by mass or more is further preferable.
[有機溶剤(成分E)]
本開示の洗浄剤組成物は、一又は複数の実施形態において、樹脂マスク除去性(剥離性)向上の観点から、有機溶剤(以下、単に「成分E」ともいう)をさらに含有してもよい。成分Eは、1種でもよいし、2種以上の組合せでもよい。
成分Eとしては、一又は複数の実施形態において、グリコールエーテル及び芳香族ケトンから選ばれる少なくとも1種の溶剤が挙げられる。
グリコールエーテルとしては、同様の観点から、炭素数1以上8以下のアルコールにエチレングリコールが1以上3モル以下付加した構造を有する化合物が挙げられる。グリコールエーテルの具体例としては、ジエチレングリコールモノブチルエーテル(BDG)、エチレングリコールモノベンジルエーテル、ジエチレングリコールモノヘキシルエーテル、エチレングリコールモノフェニルエーテル、及びジエチレングリコールジエチルエーテルから選ばれる少なくとも1種が挙げられる。
芳香族ケトンとしては、同様の観点から、アセトフェノン等が挙げられる。
[Organic solvent (component E)]
In one or more embodiments, the detergent composition of the present disclosure may further contain an organic solvent (hereinafter, also simply referred to as "component E") from the viewpoint of improving the resin mask removability (peeling property). .. The component E may be one kind or a combination of two or more kinds.
The component E includes at least one solvent selected from glycol ethers and aromatic ketones in one or more embodiments.
From the same viewpoint, examples of the glycol ether include compounds having a structure in which 1 or more and 3 mol or less of ethylene glycol is added to an alcohol having 1 or more and 8 or less carbon atoms. Specific examples of the glycol ether include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether.
Examples of the aromatic ketone include acetophenone and the like from the same viewpoint.
本開示の洗浄剤組成物が成分Eを含有する場合、本開示の洗浄剤組成物の使用時における成分Eの含有量は、樹脂マスク除去性(剥離性)向上の観点から、1質量%以上が好ましく、1.5質量%以上がより好ましく、2質量%以上が更に好ましく、そして、同様の観点から、40質量%以下が好ましく、20質量%以下がより好ましく、5質量%以下が更に好ましい。より具体的には、使用時における成分Eの含有量は、1質量%以上40質量%以下が好ましく、1.5質量%以上20質量%以下がより好ましく、2質量%以上5質量%以下が更に好ましい。成分Eが2種以上の組合せである場合、成分Eの含有量はそれらの合計含有量をいう。 When the detergent composition of the present disclosure contains the component E, the content of the component E at the time of using the cleaning agent composition of the present disclosure is 1% by mass or more from the viewpoint of improving the resin mask removability (peeling property). Is preferable, 1.5% by mass or more is more preferable, 2% by mass or more is further preferable, and from the same viewpoint, 40% by mass or less is preferable, 20% by mass or less is more preferable, and 5% by mass or less is further preferable. .. More specifically, the content of the component E at the time of use is preferably 1% by mass or more and 40% by mass or less, more preferably 1.5% by mass or more and 20% by mass or less, and 2% by mass or more and 5% by mass or less. More preferred. When the component E is a combination of two or more kinds, the content of the component E means the total content thereof.
[キレート剤(成分F)]
本開示の洗浄剤組成物は、一又は複数の実施形態において、樹脂マスク除去性(剥離性)向上の観点から、キレート剤(以下、単に「成分F」ともいう)をさらに含有することができる。成分Fは、1種でもよいし、2種以上の組合せでもよい。
成分Fとしては、例えば、カルボキシ基及びホスホン酸基から選ばれる少なくとも1種の酸基を2以上有する化合物が挙げられ、同様の観点から、前記酸基を好ましくは4以下有する化合物であることが好ましい。成分Fの具体例としては、一又は複数の実施形態において、アミノトリメチレンホスホン酸、2-ホスホノブタン-1,2,4-トリカルボン酸、エチドロン酸(1-ヒドロキシエタン-1、1-ジホスホン酸、HEDP)などが挙げられる。これらの中でも、環境負荷低減の観点から、窒素原子を含まない化合物である2-ホスホノブタン-1,2,4-トリカルボン酸、エチドロン酸(HEDP)等が好ましい。
[Chelating agent (component F)]
In one or more embodiments, the detergent composition of the present disclosure may further contain a chelating agent (hereinafter, also simply referred to as "component F") from the viewpoint of improving the resin mask removability (peeling property). .. The component F may be one kind or a combination of two or more kinds.
Examples of the component F include a compound having two or more at least one acid group selected from a carboxy group and a phosphonic acid group, and from the same viewpoint, the compound preferably having four or less of the acid groups. preferable. Specific examples of the component F include aminotrimethylenephosphonic acid, 2-phosphonobutane-1,2,4-tricarboxylic acid, etidronic acid (1-hydroxyethane-1,1-diphosphonic acid,) in one or more embodiments. HEDP) and the like. Among these, 2-phosphonobutane-1,2,4-tricarboxylic acid, etidronic acid (HEDP) and the like, which are compounds containing no nitrogen atom, are preferable from the viewpoint of reducing the environmental load.
本開示の洗浄剤組成物が成分Fを含有する場合、本開示の洗浄剤組成物の使用時における成分Fの含有量は、樹脂マスク除去性(剥離性)向上の観点から、0.5質量%以上が好ましく、1質量%以上がより好ましく、そして、同様の観点から、5質量%以下が好ましく、3質量%以下がより好ましい。より具体的には、使用時における成分Fの含有量は、0.5質量%以上5質量%以下が好ましく、1質量%以上3質量%以下がより好ましい。成分Fが2種以上の組合せである場合、成分Fの含有量はそれらの合計含有量をいう。 When the cleaning agent composition of the present disclosure contains the component F, the content of the component F at the time of using the cleaning agent composition of the present disclosure is 0.5 mass by mass from the viewpoint of improving the resin mask removability (peeling property). % Or more is preferable, 1% by mass or more is more preferable, and from the same viewpoint, 5% by mass or less is preferable, and 3% by mass or less is more preferable. More specifically, the content of the component F at the time of use is preferably 0.5% by mass or more and 5% by mass or less, and more preferably 1% by mass or more and 3% by mass or less. When the component F is a combination of two or more kinds, the content of the component F means the total content thereof.
[成分G:有機酸のアンモニウム塩]
本開示の洗浄剤組成物は、一又は複数の実施形態において、樹脂マスク除去性(剥離性)向上の観点から、有機酸のアンモニウム塩の少なくとも1種(以下、「成分G」ともいう)をさらに含有することができる。有機酸のアンモニウム塩としては、同様の観点から、炭素数1~5のカルボン酸のアンモニウム塩が好ましく、ギ酸アンモニウムがより好ましい。成分Gは、1種でもよいし、2種以上の組合せでもよい。
[Component G: Ammonium salt of organic acid]
In one or more embodiments, the detergent composition of the present disclosure contains at least one ammonium salt of an organic acid (hereinafter, also referred to as "component G") from the viewpoint of improving the resin mask removability (peeling property). It can be further contained. From the same viewpoint, the ammonium salt of the organic acid is preferably an ammonium salt of a carboxylic acid having 1 to 5 carbon atoms, and more preferably ammonium formate. The component G may be one kind or a combination of two or more kinds.
本開示の洗浄剤組成物が成分Gを含有する場合、本開示の洗浄剤組成物の使用時における成分Gの含有量は、樹脂マスク除去性(剥離性)向上の観点から、0.1質量%以上が好ましく、0.2質量%以上がより好ましく、0.3質量%以上が更に好ましく、そして、同様の観点から、2質量%以下が好ましく、1.5質量%以下がより好ましく、1質量%以下が更に好ましい。より具体的には、成分Gの含有量は、0.1質量%以上2質量%以下が好ましく、0.2質量%以上1.5質量%以下がより好ましく、0.3質量%以上1質量%以下が更に好ましい。成分Gが2種以上の組合せである場合、成分Gの含有量はそれらの合計含有量をいう。 When the cleaning agent composition of the present disclosure contains the component G, the content of the component G at the time of use of the cleaning agent composition of the present disclosure is 0.1 mass by mass from the viewpoint of improving the resin mask removability (peeling property). % Or more is preferable, 0.2% by mass or more is more preferable, 0.3% by mass or more is further preferable, and from the same viewpoint, 2% by mass or less is preferable, 1.5% by mass or less is more preferable, and 1 More preferably, it is by mass or less. More specifically, the content of the component G is preferably 0.1% by mass or more and 2% by mass or less, more preferably 0.2% by mass or more and 1.5% by mass or less, and 0.3% by mass or more and 1% by mass. % Or less is more preferable. When the component G is a combination of two or more kinds, the content of the component G means the total content thereof.
本開示の洗浄剤組成物は、一又は複数の実施形態において、樹脂マスク除去性(剥離性)向上の観点から、成分E、成分F及び成分Gをさらに含有することが好ましい。 In one or more embodiments, the detergent composition of the present disclosure preferably further contains component E, component F, and component G from the viewpoint of improving the resin mask removability (peeling property).
[その他の成分]
本開示の洗浄剤組成物は、本開示の効果を損なわない範囲で、前記成分A~G以外に、必要に応じてその他の成分をさらに含有することができる。その他の成分としては、通常の洗浄剤に用いられうる成分を挙げることができ、例えば、成分E以外の有機溶剤、界面活性剤、成分F以外のキレート剤、増粘剤、分散剤、防錆剤、高分子化合物、可溶化剤、酸化防止剤、防腐剤、消泡剤、抗菌剤等が挙げられる。
本開示の洗浄剤組成物の使用時におけるその他の含有量は、0質量%以上2質量%以下が好ましく、0質量%以上1.5質量%以下がより好ましく、0質量%以上1.3質量%以下が更に好ましく、0質量%以上1質量%以下がより更に好ましい。
[Other ingredients]
The detergent composition of the present disclosure may further contain other components, if necessary, in addition to the above-mentioned components A to G, as long as the effects of the present disclosure are not impaired. Examples of other components include components that can be used in ordinary detergents, for example, organic solvents other than component E, surfactants, chelating agents other than component F, thickeners, dispersants, and rust preventives. Examples thereof include agents, polymer compounds, solubilizers, antioxidants, preservatives, antifoaming agents, antibacterial agents and the like.
The other content of the cleaning agent composition of the present disclosure at the time of use is preferably 0% by mass or more and 2% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and 0% by mass or more and 1.3% by mass. % Or less is more preferable, and 0% by mass or more and 1% by mass or less is even more preferable.
本開示の洗浄剤組成物の使用時における成分A、成分B、成分C及び任意成分(成分E、成分F、成分G、その他の成分)由来の有機物の総含有量は、排水処理負荷低減、及び基板に対する影響低減の観点から、30質量%以下が好ましく、25質量%以下がより好ましく、20質量%以下が更に好ましく、16質量%以下がより更に好ましく、そして、樹脂マスク除去性(剥離性)向上の観点から、2質量%以上が好ましく、3質量%以上がより好ましく、4質量%以上が更に好ましく、6質量%以上がより更に好ましい。より具体的には、本開示の洗浄剤組成物の使用時における成分A、成分B、成分C及び任意成分(成分E、成分F、成分G、その他の成分)由来の有機物の総含有量は、2質量%以上30質量%以下が好ましく、3質量%以上25質量%以下がより好ましく、4質量%以上20質量%以下が更に好ましく、6質量%以上16質量%以下がより更に好ましい。 The total content of organic substances derived from component A, component B, component C and optional components (component E, component F, component G, and other components) when the cleaning agent composition of the present disclosure is used is such that the wastewater treatment load is reduced. From the viewpoint of reducing the influence on the substrate, 30% by mass or less is preferable, 25% by mass or less is more preferable, 20% by mass or less is further preferable, 16% by mass or less is further preferable, and resin mask removability (peeling property). ) From the viewpoint of improvement, 2% by mass or more is preferable, 3% by mass or more is more preferable, 4% by mass or more is further preferable, and 6% by mass or more is further preferable. More specifically, the total content of organic substances derived from component A, component B, component C and optional components (component E, component F, component G, and other components) when the cleaning composition of the present disclosure is used is It is preferably 2% by mass or more and 30% by mass or less, more preferably 3% by mass or more and 25% by mass or less, further preferably 4% by mass or more and 20% by mass or less, and further preferably 6% by mass or more and 16% by mass or less.
[洗浄剤組成物の製造方法]
本開示の洗浄剤組成物は、水溶性アミン(成分A)、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)、炭酸イオン(成分C)の供給源である炭酸塩(成分C´)、水(成分D)及び必要に応じて上述の任意成分(成分E、成分F、成分G、その他の成分)を公知の方法で配合することにより製造できる。例えば、本開示の洗浄剤組成物は、一又は複数の実施形態において、成分A、成分B、成分C´及び成分Dを配合してなるものとすることができる。
したがって、本開示は、少なくとも成分A、成分B、成分C´、及び成分Dを配合する工程を含む、洗浄剤組成物の製造方法に関する。本開示において「配合する」とは、成分A、成分B、成分C´、成分D、及び必要に応じて上述した任意成分を同時に又は任意の順に混合することを含む。本開示の洗浄剤組成物の製造方法において、各成分の好ましい配合量は、上述した本開示の洗浄剤組成物の各成分の好ましい含有量と同じとすることができる。
[Manufacturing method of detergent composition]
The cleaning agent composition of the present disclosure comprises at least one alkaline agent (component B) selected from a water-soluble amine (component A), a quaternary ammonium hydroxide and an alkali metal hydroxide, and a carbonate ion (component C). By blending a carbonate (component C'), water (component D), which is a source of the above-mentioned optional components (component E, component F, component G, and other components) as required, by a known method. Can be manufactured. For example, the detergent composition of the present disclosure may be made by blending component A, component B, component C'and component D in one or more embodiments.
Therefore, the present disclosure relates to a method for producing a detergent composition, which comprises at least a step of blending component A, component B, component C', and component D. In the present disclosure, "blending" includes mixing component A, component B, component C', component D, and optionally, any of the above-mentioned components at the same time or in any order. In the method for producing the detergent composition of the present disclosure, the preferable blending amount of each component can be the same as the preferable content of each component of the detergent composition of the present disclosure described above.
本開示の洗浄剤組成物は、そのまま洗浄に使用する形態であってもよく、分離や析出等を起こして保管安定性を損なわない範囲で水(成分D)の量を減らした濃縮物として調製してもよい。洗浄剤組成物の濃縮物は、輸送及び貯蔵の観点から、希釈倍率3倍以上の濃縮物とすることが好ましく、保管安定性の観点から、希釈倍率30倍以下の濃縮物とすることが好ましい。洗浄剤組成物の濃縮物は、使用時に各成分(成分A、成分B、成分C、成分D、成分E、成分F、及び、その他の成分)が上述した含有量又は濃度(すなわち、洗浄時の含有量又は濃度)になるよう水(成分D)で希釈して使用することができる。更に洗浄剤組成物の濃縮物は、使用時に各成分を別々に添加して使用することもできる。本開示において濃縮液の洗浄剤組成物の「使用時」又は「洗浄時」とは、洗浄剤組成物の濃縮物が希釈された状態をいう。 The detergent composition of the present disclosure may be used as it is for cleaning, and is prepared as a concentrate in which the amount of water (component D) is reduced within a range that does not cause separation, precipitation, etc. and impair storage stability. You may. The concentrate of the detergent composition is preferably a concentrate having a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and preferably a concentrate having a dilution ratio of 30 times or less from the viewpoint of storage stability. .. The concentrate of the detergent composition has the above-mentioned content or concentration (that is, at the time of cleaning) of each component (component A, component B, component C, component D, component E, component F, and other components) at the time of use. It can be used by diluting it with water (component D) so as to have the content or concentration of. Further, the concentrate of the detergent composition can be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of cleaning" of the detergent composition of the concentrate means a state in which the concentrate of the detergent composition is diluted.
[被洗浄物]
本開示の洗浄剤組成物は、一又は複数の実施形態において、表面に銅含有金属層及び樹脂マスクを有する基板の洗浄に使用されうる。銅含有金属層は、一又は複数の実施形態において、銅めっき層である。銅めっき層は、例えば、無電解銅めっき法により形成することができる。
本開示の洗浄剤組成物は、その他の一又は複数の実施形態において、樹脂マスクが付着した被洗浄物の洗浄に使用されうる。被洗浄物としては、一又は複数の実施形態において、表面に銅含有金属部位を有する被洗浄物が挙げられ、例えば、電子部品及びその製造中間物が挙げられる。電子部品としては、例えば、プリント基板、ウエハ、銅板及びアルミニウム板等の金属板から選ばれる少なくとも1つの部品が挙げられる。前記製造中間物は、電子部品の製造工程における中間製造物であって、樹脂マスク処理後の中間製造物を含む。
樹脂マスクが付着した被洗浄物の具体例としては、例えば、樹脂マスクを使用した半田付け及びめっき処理(銅めっき、アルミニウムめっき、ニッケルめっき等)の少なくとも一方の処理を行う工程を経ることにより、配線や接続端子等が基板表面に形成された電子部品等が挙げられる。本開示において、半田付けとは、基板上の樹脂マスク非存在部に半田を存在させ、加熱により半田バンプ形成することをいう。本開示において、めっき処理とは、基板上の樹脂マスク非存在部に銅めっき、アルミニウムめっき及びニッケルめっきから選ばれる少なくとも1種のめっき処理を行うことをいう。樹脂マスク非存在部とは、基板にラミネートされた樹脂マスクを現像処理することにより形成されたレジストパターンにおいて、現像処理により樹脂マスクが除去された部分のことである。したがって、本開示は、一態様において、本開示の洗浄剤組成物の、電子部品の製造における洗浄剤としての使用に関する。
被洗浄物は、一又は複数の実施形態において、基板にラミネートされた樹脂マスクを現像処理することにより形成されたレジストパターンを有する基板に、半田付け及びめっき処理の少なくとも一方の処理を行う工程を経たものである。例えば、被洗浄物として、硬化したレジスト層が基板上に形成された樹脂マスク存在部である部位と、樹脂マスク非存在部に半田バンプ又はめっき層が形成された部位、とを有する基板が挙げられる。
[Item to be washed]
The detergent composition of the present disclosure may be used in one or more embodiments to clean a substrate having a copper-containing metal layer and a resin mask on its surface. The copper-containing metal layer is, in one or more embodiments, a copper-plated layer. The copper plating layer can be formed by, for example, an electroless copper plating method.
The cleaning agent composition of the present disclosure can be used in one or more other embodiments for cleaning an object to be cleaned to which a resin mask is attached. Examples of the object to be cleaned include, in one or more embodiments, an object to be cleaned having a copper-containing metal moiety on the surface, and examples thereof include electronic parts and their manufacturing intermediates. Examples of the electronic component include at least one component selected from a metal plate such as a printed circuit board, a wafer, a copper plate, and an aluminum plate. The manufacturing intermediate product is an intermediate product in the manufacturing process of the electronic component, and includes an intermediate product after the resin mask treatment.
As a specific example of the object to be cleaned to which the resin mask is attached, for example, by going through at least one of the soldering and plating treatments (copper plating, aluminum plating, nickel plating, etc.) using the resin mask. Examples thereof include electronic components in which wiring, connection terminals, and the like are formed on the surface of a substrate. In the present disclosure, soldering means that solder is present in a portion of a substrate in which a resin mask does not exist, and solder bumps are formed by heating. In the present disclosure, the plating treatment means to perform at least one type of plating treatment selected from copper plating, aluminum plating and nickel plating on the non-existent portion of the resin mask on the substrate. The non-existent portion of the resin mask is a portion of the resist pattern formed by developing the resin mask laminated on the substrate, from which the resin mask has been removed by the developing treatment. Accordingly, the present disclosure relates, in one aspect, to the use of the cleaning agent composition of the present disclosure as a cleaning agent in the manufacture of electronic components.
In one or more embodiments, the object to be cleaned is a step of performing at least one of soldering and plating treatment on a substrate having a resist pattern formed by developing a resin mask laminated on the substrate. It has passed. For example, examples of the substrate to be cleaned include a substrate having a portion where a cured resist layer is formed on a substrate and a resin mask is present, and a portion where a solder bump or a plating layer is formed on a portion where the resin mask is not present. Be done.
本開示の洗浄剤組成物は、一又は複数の実施形態において、洗浄効果の点から、樹脂マスク、あるいは、更にめっき処理及び/又は加熱処理された樹脂マスクが付着した被洗浄物の洗浄に好適に用いられうる。樹脂マスクとしては、例えば、ネガ型樹脂マスクでもよいし、ポジ型樹脂マスクでもよい。本開示においてネガ型樹脂マスクとは、ネガ型レジストを用いて形成されるものであり、例えば、露光及び/又は現像処理されたネガ型レジスト層が挙げられる。本開示においてポジ型樹脂マスクとは、ポジ型レジストを用いて形成されるものであり、例えば、露光及び/又は現像処理されたポジ型レジスト層が挙げられる。 In one or more embodiments, the detergent composition of the present disclosure is suitable for cleaning a resin mask or an object to be cleaned to which a plating-treated and / or heat-treated resin mask is attached, from the viewpoint of cleaning effect. Can be used for. The resin mask may be, for example, a negative type resin mask or a positive type resin mask. In the present disclosure, the negative resin mask is formed by using a negative resist, and examples thereof include an exposed and / or developed negative resist layer. In the present disclosure, the positive resin mask is formed by using a positive resist, and examples thereof include an exposed and / or developed positive resist layer.
[洗浄方法]
本開示は、一態様において、水溶性アミン(成分A)、第4級アンモニウム水酸化物及びアルカリ金属水酸化物から選ばれる少なくとも1種のアルカリ剤(成分B)、炭酸イオン(成分C)及び水(成分D)を含有し、成分Cの濃度が0.3mol/L以上である洗浄剤組成物(本開示の洗浄剤組成物)を用いて、表面に銅含有金属層及び樹脂マスクを有する基板(被洗浄物)から樹脂マスクを剥離する工程(以下、単に「剥離工程」ともいう)を含む、基板の洗浄方法、成分Aと成分Bと炭酸塩(成分C´)と成分Dとを配合してなり、成分C´の濃度が0.3mol/L以上である洗浄剤組成物を用いて、表面に銅含有金属層及び樹脂マスクを有する基板から樹脂マスクを剥離する工程を含む、基板の洗浄方法、成分A、成分B、成分C及び成分Dを含有し、成分Aのアミノ基をカチオン化させた洗浄剤組成物を用いて、表面に銅含有金属層及び樹脂マスクを有する基板から樹脂マスクを剥離する工程(剥離工程)を含む、基板の洗浄方法、又は、成分Aと成分Bと成分C´と成分Dとを配合してなり、成分Aのアミノ基をカチオン化させた洗浄剤組成物を用いて、表面に銅含有金属層及び樹脂マスクを有する基板から樹脂マスクを剥離する工程を含む、基板の洗浄方法(以下、これらをまとめて「本開示の洗浄方法」ともいう)に関する。被洗浄物としては、上述した被洗浄物を挙げることができる。前記剥離工程は、一又は複数の実施形態において、被洗浄物を本開示の洗浄剤組成物に接触させることを含む。本開示の洗浄方法によれば、一又は複数の実施形態において、銅の腐食を抑制しつつ、樹脂マスクを効率よく除去できる。さらに、本開示の洗浄方法によれば、一又は複数の実施形態において、洗浄後の基板上の残留物を低減できる。
[Washing method]
The present disclosure, in one embodiment, comprises at least one alkaline agent (component B), carbonate ion (component C), selected from a water-soluble amine (component A), a quaternary ammonium hydroxide and an alkali metal hydroxide. Using a cleaning agent composition (cleaning agent composition of the present disclosure) containing water (component D) and having a concentration of component C of 0.3 mol / L or more, a copper-containing metal layer and a resin mask are provided on the surface. A method for cleaning a substrate, including a step of peeling a resin mask from a substrate (object to be cleaned) (hereinafter, also simply referred to as a "peeling step"), a component A, a component B, a carbonate (component C'), and a component D. A substrate comprising a step of peeling a resin mask from a substrate having a copper-containing metal layer and a resin mask on the surface using a cleaning agent composition which is blended and has a concentration of component C'of 0.3 mol / L or more. From a substrate having a copper-containing metal layer and a resin mask on the surface, using a cleaning agent composition containing the components A, B, C and D and cationizing the amino group of the component A. A method for cleaning a substrate, which includes a step of peeling off a resin mask (peeling step), or a cleaning method in which component A, component B, component C', and component D are blended and the amino group of component A is cationized. A method for cleaning a substrate, which comprises a step of peeling the resin mask from a substrate having a copper-containing metal layer and a resin mask on the surface using the agent composition (hereinafter, these are collectively referred to as “the cleaning method of the present disclosure”). Regarding. Examples of the object to be cleaned include the above-mentioned object to be cleaned. The peeling step, in one or more embodiments, comprises contacting the object to be cleaned with the cleaning composition of the present disclosure. According to the cleaning method of the present disclosure, in one or more embodiments, the resin mask can be efficiently removed while suppressing the corrosion of copper. Further, according to the cleaning method of the present disclosure, in one or more embodiments, the residue on the substrate after cleaning can be reduced.
本開示の洗浄剤組成物を用いて被洗浄物から樹脂マスクを剥離する方法、又は、被洗浄物に本開示の洗浄剤組成物を接触させる方法としては、例えば、洗浄剤組成物を入れた洗浄浴槽内へ浸漬することで接触させる方法、洗浄剤組成物をスプレー状に射出して接触させる方法(シャワー方式)、浸漬中に超音波照射する超音波洗浄方法等が挙げられる。本開示の洗浄剤組成物は、希釈することなくそのまま洗浄に使用できる。被洗浄物としては、上述した被洗浄物を挙げることができる。 As a method of peeling the resin mask from the object to be cleaned using the cleaning agent composition of the present disclosure, or a method of contacting the cleaning agent composition of the present disclosure with the object to be cleaned, for example, a cleaning agent composition is added. Examples thereof include a method of contacting by immersing in a washing tub, a method of injecting a cleaning agent composition into contact by spraying it (shower method), and an ultrasonic cleaning method of irradiating ultrasonic waves during immersion. The detergent composition of the present disclosure can be used as it is for cleaning without being diluted. Examples of the object to be cleaned include the above-mentioned object to be cleaned.
本開示の洗浄方法は、一又は複数の実施形態において、洗浄剤組成物に被洗浄物を接触させた後、水でリンスし、乾燥する工程を含むことができる。本開示の洗浄方法は、一又は複数の実施形態において、洗浄剤組成物に被洗浄物を接触させた後、水ですすぐ工程を含むことができる。 The cleaning method of the present disclosure may include, in one or more embodiments, a step of contacting the cleaning agent composition with the object to be cleaned, rinsing with water, and drying. The cleaning method of the present disclosure may include, in one or more embodiments, a step of contacting the cleaning agent composition with the object to be cleaned and then rinsing with water.
本開示の洗浄方法は、本開示の洗浄剤組成物の洗浄力が発揮されやすい点から、本開示の洗浄剤組成物と被洗浄物との接触時に超音波を照射することが好ましく、その超音波は比較的高周波数であることがより好ましい。前記超音波の照射条件は、同様の観点から、例えば、26~72kHz、80~1500Wが好ましく、36~72kHz、80~1500Wがより好ましい。 In the cleaning method of the present disclosure, it is preferable to irradiate ultrasonic waves at the time of contact between the cleaning agent composition of the present disclosure and the object to be cleaned, because the cleaning power of the cleaning agent composition of the present disclosure is easily exerted. It is more preferable that the sound wave has a relatively high frequency. From the same viewpoint, the ultrasonic irradiation conditions are preferably, for example, 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.
本開示の洗浄方法において、本開示の洗浄剤組成物の洗浄力が発揮されやすい点から、洗浄剤組成物の温度は40℃以上が好ましく、50℃以上がより好ましく、そして、基板に対する影響低減の観点から、70℃以下が好ましく、60℃以下がより好ましい。 In the cleaning method of the present disclosure, the temperature of the cleaning agent composition is preferably 40 ° C. or higher, more preferably 50 ° C. or higher, and the influence on the substrate is reduced, from the viewpoint that the cleaning power of the cleaning agent composition of the present disclosure is easily exhibited. From the viewpoint of the above, 70 ° C. or lower is preferable, and 60 ° C. or lower is more preferable.
[電子部品の製造方法]
本開示は、一態様において、本開示の洗浄方法を用いて、表面に銅含有金属層及び樹脂マスクを有する基板(被洗浄物)を洗浄する工程(洗浄工程)を含む、電子部品の製造方法(以下、「本開示の電子部品の製造方法」ともいう)に関する。被洗浄物としては、上述した被洗浄物を挙げることができる。本開示の電子部品の製造方法は、一又は複数の実施形態において、前記洗浄工程の後、銅を含む金属層をエッチングする工程を含むことができる。
本開示の電子部品の製造方法によれば、本開示の洗浄方法を用いて洗浄を行うことにより、銅の腐食を抑制しつつ、電子部品に付着した樹脂マスクを効果的に除去でき、さらに洗浄後の基板上の残留物を低減できるため、信頼性の高い電子部品の製造が可能になる。さらに、本開示の洗浄方法を用いて洗浄を行うことにより、電子部品に付着した樹脂マスクの除去が容易になることから、洗浄時間が短縮化でき、電子部品の製造効率を向上できる。
[Manufacturing method of electronic parts]
The present disclosure is, in one aspect, a method for manufacturing an electronic component, comprising a step (cleaning step) of cleaning a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on the surface by using the cleaning method of the present disclosure. (Hereinafter, also referred to as "the manufacturing method of the electronic parts of the present disclosure"). Examples of the object to be cleaned include the above-mentioned object to be cleaned. The method for manufacturing electronic components of the present disclosure may include, in one or more embodiments, a step of etching a metal layer containing copper after the cleaning step.
According to the method for manufacturing electronic components of the present disclosure, by performing cleaning using the cleaning method of the present disclosure, it is possible to effectively remove the resin mask adhering to the electronic components while suppressing the corrosion of copper, and further cleaning. Since the residue on the substrate can be reduced later, it becomes possible to manufacture highly reliable electronic components. Further, by performing cleaning using the cleaning method of the present disclosure, the resin mask adhering to the electronic component can be easily removed, so that the cleaning time can be shortened and the manufacturing efficiency of the electronic component can be improved.
[キット]
本開示は、一態様において、本開示の洗浄方法及び本開示の電子部品の製造方法のいずれかに使用するためのキット(以下、「本開示のキット」ともいう)に関する。本開示のキットは、一又は複数の実施形態において、本開示の洗浄剤組成物を製造するためのキットである。本開示のキットによれば、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制できる洗浄剤組成物が得られうる。
[kit]
The present disclosure relates, in one aspect, to a kit for use in any of the cleaning methods of the present disclosure and the method of manufacturing electronic components of the present disclosure (hereinafter, also referred to as "kit of the present disclosure"). The kit of the present disclosure is a kit for producing the detergent composition of the present disclosure in one or more embodiments. According to the kit of the present disclosure, it is possible to obtain a detergent composition capable of suppressing copper corrosion without significantly impairing the resin mask removability (peeling property).
本開示のキットの一実施形態としては、成分Aを含有する溶液(第1液)と、成分Bを含有する溶液(第2液)と、成分C又は成分C´を含有する溶液(第3液)とを、相互に混合されない状態で含み、第1液、第2液及び第3液から選ばれる少なくとも1つは、水(成分D)の一部又は全部を更に含有し、第1液と第2液と第3液は使用時に混合されるキット(3液型洗浄剤組成物)が挙げられる。第1液と第2液と第3液が混合された後、必要に応じて水(成分D)で希釈されてもよい。第1液、第2液及び第3液の各々には、必要に応じて上述した任意成分が含まれていてもよい。
本開示のキットのその他の実施形態としては、成分Bを含有する溶液(第1液)と、成分Aと成分C又は成分C´とを含有する溶液(第2液)とを、相互に混合されない状態で含み、第1液及び第2液の少なくとも一方は、水(成分D)の一部又は全部を更に含有し、第1液と第2液とは使用時に混合される、キット(2液型洗浄剤組成物)が挙げられる。第1液と第2液とが混合された後、必要に応じて水(成分D)で希釈されてもよい。第1液及び第2液の各々には、必要に応じて上述した任意成分が含まれていてもよい。
As one embodiment of the kit of the present disclosure, a solution containing component A (first solution), a solution containing component B (second solution), and a solution containing component C or component C'(third solution). Liquid) is contained in a state where it is not mixed with each other, and at least one selected from the first liquid, the second liquid and the third liquid further contains a part or all of water (component D) and is the first liquid. A kit (three-component cleaning agent composition) in which the second liquid and the third liquid are mixed at the time of use can be mentioned. After the first liquid, the second liquid and the third liquid are mixed, they may be diluted with water (component D) if necessary. Each of the first liquid, the second liquid, and the third liquid may contain the above-mentioned optional components, if necessary.
As another embodiment of the kit of the present disclosure, a solution containing component B (liquid 1) and a solution containing component A and component C or component C'(liquid 2) are mixed with each other. Kit (2), which is contained in an undisturbed state, in which at least one of the first solution and the second solution further contains a part or all of water (component D), and the first solution and the second solution are mixed at the time of use. Liquid type detergent composition). After the first liquid and the second liquid are mixed, they may be diluted with water (component D) if necessary. Each of the first liquid and the second liquid may contain the above-mentioned optional components, if necessary.
以下に、実施例により本開示を具体的に説明するが、本開示はこれらの実施例によって何ら限定されるものではない。 Hereinafter, the present disclosure will be specifically described with reference to Examples, but the present disclosure is not limited to these Examples.
1.実施例1~8及び比較例1~2の洗浄剤組成物の調製
表1に示す各成分を表1に記載の配合量(質量%、有効分)で配合し、それを攪拌して混合することにより、実施例1~8及び比較例1~2の洗浄剤組成物を調製した。調製した各洗浄剤組成物中の成分A~成分Cの濃度(mol/L)、炭酸イオン/水溶性アミンのモル比C/A、及び、炭酸イオン/アルカリ剤のモル比C/Bを表1に示した。
1. 1. Preparation of Detergent Compositions of Examples 1 to 8 and Comparative Examples 1 to 2 Each component shown in Table 1 is blended in the blending amount (mass%, effective content) shown in Table 1, and the mixture is stirred and mixed. Thereby, the detergent compositions of Examples 1 to 8 and Comparative Examples 1 and 2 were prepared. Tables show the concentrations (mol / L) of components A to C in each of the prepared cleaning agent compositions, the molar ratio C / A of carbonate ion / water-soluble amine, and the molar ratio C / B of carbonate ion / alkaline agent. Shown in 1.
実施例1~8及び比較例1~2の洗浄剤組成物の調製には、下記のものを使用した。
(成分A)
MEA:モノエタノールアミン[株式会社日本触媒製]
(成分B)
TMAH:テトラメチルアンモニウムヒドロキシド[昭和電工株式会社製、濃度25%]
(成分Cの供給源(成分C´))
炭酸テトラメチルアンモニウム[pH:9.3、大阪化学薬品株式会社製、濃度30%]
炭酸アンモニウム[富士フィルム和光純薬株式会社製]
(成分D)
水[オルガノ株式会社製純水装置G-10DSTSETで製造した1μS/cm以下の純水]
(成分E)
BDG:ブチルジグリコール[日本乳化剤株式会社製、ジエチレングリコールモノブチルエーテル]
(成分F)HEDP:エチドロン酸[イタルマッチジャパン株式会社製、Dequest2010、濃度60%]
(成分G)
ギ酸アンモニウム[富山薬品工業株式会社製]
The following were used to prepare the detergent compositions of Examples 1 to 8 and Comparative Examples 1 and 2.
(Component A)
MEA: Monoethanolamine [manufactured by Nippon Shokubai Co., Ltd.]
(Component B)
TMAH: Tetramethylammonium hydroxide [manufactured by Showa Denko KK, concentration 25%]
(Source of component C (component C'))
Tetramethylammonium carbonate [pH: 9.3, manufactured by Osaka Chemical Co., Ltd., concentration 30%]
Ammonium carbonate [manufactured by Fuji Film Wako Pure Chemical Industries, Ltd.]
(Component D)
Water [Pure water of 1 μS / cm or less manufactured by Organo Corporation's pure water device G-10DSTSET]
(Component E)
BDG: Butyl diglycol [manufactured by Nippon Embroidery Co., Ltd., diethylene glycol monobutyl ether]
(Ingredient F) HEDP: etidronic acid [Italmatch Japan Co., Ltd., Dequest2010, concentration 60%]
(Component G)
Ammonium formate [manufactured by Tomiyama Pure Chemical Industries, Ltd.]
2.洗浄剤組成物の評価
調製した実施例1~8及び比較例1~2の洗浄剤組成物について下記評価を行った。
2. 2. Evaluation of Detergent Composition The following evaluations were performed on the prepared detergent compositions of Examples 1 to 8 and Comparative Examples 1 and 2.
[テストピースの作製]
PKG(半導体パッケージ)基板回路形成用感光性フィルムを無電解めっき後の基板表面に下記条件でラミネートし、露光処理して硬化(露光工程)することで樹脂マスクを有する基板(テストピース、30mm×50mm)を得た。
(1)ラミネート:クリーンローラー(株式会社レヨーン工業製、RY-505Z)及び真空アプリケータ(ローム&ハース社製、VA7024/HP5)を用いてローラー温度50℃、ローラー圧1.4Barで行う。
(2)露光:プリント基板用直接描画装置(株式会社SCREENグラフィックアンドプレシジョンソリューションズ製、Mercurex LI-9500)を用い、露光量15mJ/cm2で露光を行う。
[Making test pieces]
A substrate having a resin mask (test piece, 30 mm ×) is obtained by laminating a photosensitive film for forming a PKG (semiconductor package) substrate circuit on the surface of the substrate after electroless plating under the following conditions, exposing it to an exposure process, and then curing it (exposure step). 50 mm) was obtained.
(1) Lamination: Using a clean roller (RY-505Z, manufactured by Leyon Industries, Ltd.) and a vacuum applicator (VA7024 / HP5, manufactured by ROHM & Haas), the roller temperature is 50 ° C. and the roller pressure is 1.4 Bar.
(2) Exposure: Using a direct drawing device for a printed circuit board (Mercurex LI-9500, manufactured by SCREEN Graphic and Precision Solutions Co., Ltd.), exposure is performed at an exposure amount of 15 mJ / cm 2 .
[洗浄試験]
トール型の200mLガラスビーカーに、実施例1~8及び比較例1~2の各洗浄剤組成物を100g添加して50℃に加温し、回転子(フッ素樹脂(PTFE)、φ8mm×25mm)を用いて回転数600rpmで撹拌した状態で、テストピースを10分間浸漬する。そして、100mLガラスビーカーに水を100g添加したすすぎ槽へ浸漬してすすいだ後、窒素ブローにて乾燥する。
[Washing test]
To a tall type 200 mL glass beaker, 100 g of each cleaning agent composition of Examples 1 to 8 and Comparative Examples 1 and 2 was added and heated to 50 ° C., and the rotor (fluororesin (PTFE), φ8 mm × 25 mm) was heated. The test piece is immersed for 10 minutes while being stirred at a rotation speed of 600 rpm. Then, it is immersed in a rinsing tank containing 100 g of water in a 100 mL glass beaker for rinsing, and then dried with a nitrogen blow.
[樹脂マスク除去性(剥離性)の評価]
光学顕微鏡「デジタルマイクロスコープVHX-6000」(株式会社キーエンス製)を用いて、前記洗浄試験を行った後のテストピースのパターン部に残存する樹脂マスクの有無を500倍に拡大して目視確認し、下記基準で評価する。
<評価基準>
A:5μm/5μmでも残渣が見られない
B:6μm/6μmまでは残渣が見られない
C:7μm/7μmまでは残渣が見られない
D:7μm/7μmでも残渣が見られる
[Evaluation of resin mask removability (peeling property)]
Using an optical microscope "Digital Microscope VHX-6000" (manufactured by KEYENCE CORPORATION), the presence or absence of the resin mask remaining on the pattern portion of the test piece after the cleaning test was visually confirmed by magnifying it 500 times. , Evaluate according to the following criteria.
<Evaluation criteria>
A: No residue is seen even at 5 μm / 5 μm B: No residue is seen up to 6 μm / 6 μm C: No residue is seen up to 7 μm / 7 μm D: Residue is seen even at 7 μm / 7 μm
[Cuエッチングレートの評価(銅の腐食の評価)]
各洗浄剤組成物を2.5L調整して50℃に加温し、充円錐ノズル(J020、株式会社いけうち製)をスプレーノズルとして取り付けたボックス型スプレー洗浄機にて循環しながら、表面に銅めっき(面積は片面あたり25cm2、両面で50cm2)を施したテストピースに対して4分間スプレー(圧力:0.05MPa、スプレー距離:80mm)する。洗浄剤組成物を希釈した後、ICP分析法(Agilent Technologies製Agilent5110 ICP-OES)で銅の溶出量を測定し、下記式により、銅の密度を8.94g/cm3として溶出量からCuエッチングレート(μm/min)を評価した。Cuエッチングレートの数値が低いほど、銅腐食抑制効果に優れると判断できる。
Cuエッチングレート(μm/min)=銅の溶出量(重量)÷銅の密度÷めっき面積÷処理時間
[Evaluation of Cu etching rate (evaluation of copper corrosion)]
Adjust 2.5 L of each cleaning agent composition, heat it to 50 ° C, and circulate it in a box-type spray washing machine equipped with a filled cone nozzle (J020, manufactured by Ikeuchi Co., Ltd.) as a spray nozzle, and copper on the surface. Spray for 4 minutes (pressure: 0.05 MPa, spray distance: 80 mm) on the plated test piece (area is 25 cm 2 per side, 50 cm 2 on both sides). After diluting the cleaning agent composition, the elution amount of copper was measured by ICP analysis method (Agilent 5110 ICP-OES manufactured by Agilent Technologies), and the copper density was set to 8.94 g / cm 3 by the following formula, and the Cu etching rate was determined from the elution amount. (Μm / min) was evaluated. It can be judged that the lower the value of the Cu etching rate, the better the copper corrosion suppressing effect.
Cu etching rate (μm / min) = copper elution amount (weight) ÷ copper density ÷ plating area ÷ processing time
[基板樹脂へのダメージの評価]
ソルダーレジスト樹脂を有する基板について上記洗浄試験を行い、前後で基板の樹脂部分に色等の変化が生じるかを目視で確認し、下記評価基準で評価する。
<評価基準>
A:洗浄試験の前後で変化が見られない。
B:洗浄試験の前後で変化が見られる。
[Evaluation of damage to substrate resin]
The above-mentioned cleaning test is performed on a substrate having a solder resist resin, and it is visually confirmed whether or not a change in color or the like occurs in the resin portion of the substrate before and after the substrate, and the evaluation is made according to the following evaluation criteria.
<Evaluation criteria>
A: No change is seen before and after the cleaning test.
B: Changes are seen before and after the cleaning test.
表1に示すとおり、実施例1~8の洗浄剤組成物は、成分Cを含まない比較例1、及び、成分Cの濃度が0.3mol/L未満の比較例2に比べて、樹脂マスク除去性(剥離性)を大きく損なうことなく、銅腐食を抑制できていることがわかった。
なお、水以外にMEA(成分A)とTMAH(成分B)のみを含む比較例1(pH12)と、更に炭酸テトラメチルアンモニウムを含む実施例1(pH11)とを比較すると、炭酸テトラメチルアンモニウムの配合により実施例1のpHが低下しているにもかかわらず、中和滴定で測定したTMAHの含有量は両者で差がないことがわかった。よって、実施例1のpHが低下した理由は、MEAの含有量が減少したことによるものと考えられる。このことから、実施例1では、炭酸テトラメチルアンモニウムがMEAのアミノ基をカチオン化していると推定された。ここで、pHは、25℃における洗浄剤組成物のpHであり、pHメータ(東亜電波工業株式会社、HM-30G)を用いて測定し、電極の洗浄剤組成物への浸漬後3分後の数値である。
As shown in Table 1, the detergent compositions of Examples 1 to 8 have a resin mask as compared with Comparative Example 1 containing no component C and Comparative Example 2 having a concentration of component C of less than 0.3 mol / L. It was found that copper corrosion could be suppressed without significantly impairing the removability (peeling property).
Comparing Comparative Example 1 (pH 12) containing only MEA (component A) and TMAH (component B) in addition to water with Example 1 (pH 11) containing tetramethylammonium carbonate, tetramethylammonium carbonate It was found that there was no difference in the content of TMAH measured by neutralization titration between the two, although the pH of Example 1 was lowered by the compounding. Therefore, it is considered that the reason why the pH of Example 1 decreased is that the content of MEA decreased. From this, it was presumed that in Example 1, tetramethylammonium carbonate cationized the amino group of MEA. Here, the pH is the pH of the cleaning agent composition at 25 ° C., measured using a pH meter (Toa Denpa Kogyo Co., Ltd., HM-30G), and 3 minutes after the electrode is immersed in the cleaning agent composition. It is a numerical value of.
本開示によれば、樹脂マスク除去性を大きく損なうことなく、銅腐食を抑制可能な洗浄剤組成物を提供できる。本開示の洗浄剤組成物を用いることで、樹脂マスクが付着した電子部品の洗浄工程の短縮化及び製造される電子部品の性能・信頼性の向上が可能となり、半導体装置の生産性を向上できる。 According to the present disclosure, it is possible to provide a detergent composition capable of suppressing copper corrosion without significantly impairing the resin mask removability. By using the cleaning agent composition of the present disclosure, it is possible to shorten the cleaning process of electronic parts to which a resin mask is attached, improve the performance and reliability of manufactured electronic parts, and improve the productivity of semiconductor devices. ..
Claims (11)
成分Cの濃度が0.3mol/L以上である、樹脂マスク剥離用洗浄剤組成物。 Contains at least one alkaline agent (component B), carbonate ion (component C) and water (component D) selected from water-soluble amines (component A), quaternary ammonium hydroxides and alkali metal hydroxides. ,
A detergent composition for removing a resin mask, wherein the concentration of the component C is 0.3 mol / L or more.
成分C´の濃度が0.3mol/L以上である、樹脂マスク剥離用洗浄剤組成物。 A water-soluble amine (component A), at least one alkaline agent (component B) selected from a quaternary ammonium hydroxide and an alkali metal hydroxide, a carbonate (component C'), and water (component D). ) And
A detergent composition for removing a resin mask, wherein the concentration of the component C'is 0.3 mol / L or more.
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