TWI795433B - Stripping composition for removing dry film resist and stripping method using the same - Google Patents

Abstract

The present invention relates to a technology that can shorten stripping time, improve stripping strength, and replace TMAH which is an environmentally prohibited substance by adding triethylmethylammonium hydroxide(TEMAH), tetraethylammonium hydroxide(TEAH), or a mixture thereof in a stripping composition for removing dry film resist.

Description

Stripping composition for removing dry film photoresist and use of said composition peeling method

The invention relates to a stripping composition for removing dry film photoresist and a stripping method using the composition.

Photosensitive resins are classified into negative type and positive type according to the reaction mechanism utilizing light. In the case of a negative photosensitive resin, a photocrosslinking reaction occurs in the exposed portion, the unexposed portion is washed away by alkali, and a photoresist pattern is left. In the case of a positive photosensitive resin, a photodegradation reaction occurs at an exposed portion to be developed in an alkali, and an unexposed portion remains to form a photoresist pattern.

Negative photoresists have been widely used in semiconductor device fields such as liquid crystal panel devices and large scale integrated circuits (LSI). As the size of semiconductors, panels, and modules becomes smaller and smaller, the demand for high-resolution negative photoresist increases.

While the L/S becomes narrower to achieve high resolution, problems such as peeling failure and overhang are caused during development. Existing inorganic dry film resist (dry film resist, DFR) stripping solutions (for example, KOH and NaOH solutions) Has limitations in removing dry film photoresist. Tetramethyl ammonium hydroxide (TMAH) has been used to improve stripping.

Korean Patent Publication No. 2000-0046480 describes an example of a photoresist remover composition.

The object of the present invention is to remove dry film photoresist by including triethylmethylammonium hydroxide (triethylmethylammonium hydroxide, TEMAH), tetraethylammonium hydroxide (tetraethylammonium hydroxide, TEAH) or Its mixture shortens the peeling time, improves the peeling strength and replaces TMAH, which is an environmentally prohibited substance.

According to an aspect of the present invention, there is provided a stripping composition for removing dry film photoresist, said composition comprising: 1 to 7 parts by weight of triethylmethylammonium hydroxide (TEMAH), tetraethylammonium ammonium hydroxide (TEAH) or a mixture thereof; 1 to 10 parts by weight of a chain amine compound; and 1 to 10 parts by weight of an organic solvent.

According to an embodiment of the present invention, a triethylmethylammonium hydroxide compound may be included.

According to an embodiment of the present invention, 1 to 5 parts by weight of triethylmethylammonium hydroxide or tetraethylammonium hydroxide compound may be included.

According to an embodiment of the present invention, the chain amine compound may be monoethanolamine.

According to an embodiment of the present invention, the organic solvent may be glycol ether.

According to an embodiment of the present invention, the glycol ether may be selected from diethylene glycol monobutyl ether (diethylene glycol monobutyl ether, DEGBE) and ethylene glycol monobutyl ether (ethylene glycol monobutyl ether, EGBE).

According to an embodiment of the present invention, the stripping composition for removing the dry film photoresist may further include 0.1 to 0.5 parts by weight of a triazole compound or a tetrazole compound.

According to an embodiment of the present invention, the triazole compound may be tolyltriazole.

According to an embodiment of the present invention, the concentration of the organic solvent in the stripping composition for removing the dry film photoresist can be analyzed by dynamic surface tension (DST).

According to another aspect of the present invention, there is provided a method for stripping a dry film photoresist, the method comprising: laminating a dry film on a substrate on which a predetermined circuit pattern is formed; partially exposing to form an exposed portion of the dry film and an unexposed portion of the dry film; developing and removing the unexposed portion of the dry film to form an opening; and contacting the exposed portion of the dry film for removal of the dry film Stripping composition for photoresists.

According to an embodiment of the present invention, the stripping method may further include washing dry film photoresist residues after the contacting step.

According to an embodiment of the present invention, the exposing the exposed part of the dry film to the stripping composition for removing the dry film photoresist may be performed for 3 hours or less.

According to an embodiment of the present invention, the stripping composition for removing dry film photoresist may include triethylmethylammonium hydroxide (TEMAH), tetraethylammonium hydroxide (TEAN) or a mixture thereof to shorten the stripping time And improve the peel strength.

In addition, TMAH in the stripping composition used to remove dry film photoresist can be replaced to be environmentally friendly and prevent etching of plating sites and substrate surfaces, which is a side effect associated with TMAH.

Therefore, by using the stripping composition for removing dry film resist according to the present invention, the dry film resist can be completely removed in a short time while minimizing the corrosion of the metal layer contacting the stripping solution.

10: Circuit pattern

20: dry film

21: The unexposed part of the dry film

22: The exposed part of the dry film

30: solder ball

100: Substrate

FIG. 1 is a graph showing improved peel strength by a peel composition for removing dry film photoresist according to an embodiment of the present invention.

2 is a graph showing peel strength based on an organic solvent in a peel composition for removing a dry film photoresist according to an embodiment of the present invention.

3 is a graph showing peel strength based on component concentrations in a peel composition for removing dry film photoresist according to an embodiment of the present invention.

FIG. 4 is a graph showing the increased stripping speed by the stripping composition for removing dry film photoresist according to an embodiment of the present invention.

5 is a graph showing that even when an etch inhibitor is added to a stripping composition for removing a dry film photoresist according to an embodiment of the present invention, stripping strength is not affected.

6 is a graph showing that by using the stripping composition for removing dry film resist according to an embodiment of the present invention, there is no significant difference in etching effect even when the number of stripping is increased.

FIG. 7 is a graph showing the results of analyzing the concentration of an organic solvent in a stripping composition for removing a dry film photoresist according to an embodiment of the present invention.

8A and 8B are diagrams showing that even when an etching inhibitor is added to a stripping composition for removing a dry film photoresist according to an embodiment of the present invention, the concentration of an organic solvent in the stripping composition can be adjusted. The graph for analysis.

FIG. 9 is a diagram illustrating a method of stripping a dry film photoresist using a stripping composition for removing a dry film photoresist according to an embodiment of the present invention.

Before elaborating the present invention in more detail, it should be understood that the words or phrases used in the description and the scope of the patent application should not be understood in the traditional or dictionary sense, but should be understood according to the meaning and concept of the technical concept of the present invention and Concepts based on terms can be properly defined as the principles explaining the terms as the best mode of the present invention.

Although the present disclosure has been described with reference to specific embodiments, it should be understood that various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the present disclosure as defined by the appended claims and equivalents thereof. .

The above and other objects, features and advantages of the present disclosure will become more apparent to those skilled in the art by explaining the detailed exemplary embodiments of the present disclosure with reference to the accompanying drawings. Throughout the description of the present disclosure, when explaining a certain technology is determined to avoid the main points of the present disclosure, the relevant detailed description will be omitted.

A stripping composition for removing a dry film photoresist according to an exemplary embodiment of the present invention comprises 1 to 7 parts by weight of a tetraalkylammonium hydroxide compound, 1 The chain amine compound is 10 parts by weight and the organic solvent is 10 parts by weight.

Tetraalkylammonium hydroxide compounds

The tetraalkylammonium hydroxide compound in the stripping composition for removing dry film photoresist according to an exemplary embodiment of the present invention is triethylmethylammonium hydroxide (TEMAH), tetraethylammonium hydroxide (TEAH ) compounds or mixtures thereof.

The peel strength of the triethylmethylammonium hydroxide (TEMAH) and tetraethylammonium hydroxide (TEAH) compounds according to the invention is comparable to that of tetramethylammonium hydroxide (TMAH) ( FIG. 1 ).

Specifically, the peel strength of triethylmethylammonium hydroxide (TEMAH) was superior to that of tetramethylammonium hydroxide (TMAH) at low concentrations.

In addition, the stripping speed of triethylmethylammonium hydroxide (TEMAH) is better than that of tetramethylammonium hydroxide (TMAH). Specifically, when the dry film photoresist was stripped using a conventional stripping composition for dry film photoresist removal containing tetramethylammonium hydroxide (TMAH), stripping did not occur after 24 hours, whereas using the present When the inventive stripping composition for removing dry film photoresist containing triethylmethylammonium hydroxide (TEMAH) is used to strip dry film photoresist, the stripping can occur from 30 minutes and be completed within 2 hours to 3 hours Peel off (Figure 4).

The amount of the tetraalkylammonium hydroxide compound in the stripping composition is not particularly limited, but it can be 1 to 7 parts by weight, preferably 1 to 6 parts by weight, more preferably 1 to 5 parts by weight , more preferably 1 to 4 parts by weight and most preferably 1 to 2 parts by weight. If the amount of the hydroxide compound is less than 1 part by weight, Then it may be difficult to completely remove the dry film resist due to deterioration in the ability to penetrate into the polymer constituting the dry film resist. If the amount of the hydroxide compound exceeds 7 parts by weight, the metal film may be corroded.

chain amine compound

The chain amine compound in the stripping composition for removing dry film photoresist according to an exemplary embodiment of the present invention may be at least one selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, acrylic acid Alcoholamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, 2-(2-aminoethoxy)ethanol, 2-(2-amino ethylamino)ethanol, N,N-dimethylethanolamine, N,N-diethylethanolamine, N-methylethanolamine, N-ethylethanolamine and N-butylethanolamine, and most preferably monoethanolamine.

The amount of the chain amine compound in the stripping composition is not particularly limited, but may be 1 to 10 parts by weight, preferably 1 to 8 parts by weight. If the amount of the chain amine compound is less than 1 part by weight, it may be difficult to completely remove the dry film photoresist. If the amount exceeds 10 parts by weight, the amount of other components included in the stripping composition may be reduced, thereby prolonging the time to remove the dry film photoresist, generating bubbles, and corroding the metal film.

Organic solvents

The organic solvent in the stripping composition for removing dry film photoresist according to an embodiment of the present invention may be a water-soluble organic solvent selected from alcohols, glycols, glycol ethers, lactones, lactamides, ketones, and esters, and mixtures of two or more, and most preferably glycol ethers.

Glycol ethers are incorporated into the organic polymers of the exfoliation composition to enhance solubility and Increased cleaning power in post-cleaning.

The glycol ether may be at least one selected from diethylene glycol monobutyl ether (DEGBE) and ethylene glycol monobutyl ether (EGBE), but not limited thereto ( FIG. 2 ).

The amount of the organic solvent in the stripping composition is not particularly limited, but may be 1 to 10 parts by weight, preferably 2 to 7 parts by weight, or more preferably 2 to 6 parts by weight. If the amount of the organic solvent used is less than 1 part by weight, it may be difficult to completely remove the dry film photoresist. If the amount exceeds 10 parts by weight, the amount of other components included in the stripping composition may be reduced, thereby prolonging the time to remove the dry film photoresist, generating bubbles, and corroding the metal film.

In addition, the peeling composition according to the present invention may further include at least one of the following components.

etch inhibitor

The photoresist stripping composition for removing a dry film according to an exemplary embodiment of the present invention may include an etch inhibitor.

The etch inhibitor prevents damage to the underlying film and prevents etching from contacting the metallic material of the stripped composition.

The etch inhibitor can be selected from sugars, sugar alcohols, aromatic hydroxyl compounds, acetylenic alcohols (acetylenic alcohol), carboxylic acids and their anhydrides, 5-aminotetrazole (5-aminotetrazole, 5-AT), polyethylene glycol (polyethylene glycol, PEG) and triazole compounds.

The etch inhibitor may be a triazole compound. The triazole compound may be selected from the group consisting of tolyltriazole, benzotriazole, o-tolyltriazole, m-tolyltriazole, p-tolyltriazole A group consisting of azole, carboxybenzotriazole, 1-hydroxybenzotriazole, propylbenzotriazole, etc.

In terms of etching inhibition, tolyltriazole (TTA) may be suitably used as the triazole compound.

The amount of the triazole compound in the peeling composition is not particularly limited, but may be 0.1 to 0.5 parts by weight. When the amount of the triazole compound is less than 0.1 parts by weight, the effect of the etch inhibitor in the stripping composition for removing dry film photoresist including the amine compound may not be properly exerted. If the amount exceeds 0.5 parts by weight, the amount of other components included in the stripping composition may decrease, thus making it impossible to completely remove the dry film resist and possibly reducing economical efficiency.

Pure water (H ₂ O)

The pure water in the stripping composition for removing dry film photoresist according to an exemplary embodiment of the present invention may be filtered through an ion exchange resin and have a resistivity of 18 (megaohms, MΩ) or higher. pure water.

The amount of pure water used in the peeling composition is not particularly limited, but may be an amount not affected by the compositional ratio of other components described above. If the amount is too low, the viscosity of the peeling composition may increase, resulting in reduced permeability and release ability of the peeling composition. If the amount is too high, the peeling composition may be excessively diluted, and peeling ability may be deteriorated.

polar solvent

The polar solvent used in the present invention may be a sulfur compound such as dimethylsulfoxide or an alkylpyrrolidone such as n-methylpyrrolidone.

Hereinafter, a peeling method according to the present invention will be explained.

A method for stripping a dry film photoresist using a stripping composition according to a representative embodiment of the present invention is illustrated by the diagram of FIG. 9 .

The dry film 20 is laminated on the substrate 100 on which the predetermined circuit pattern 10 is formed, and the laminated dry film 20 is partially exposed to form a dry film exposed portion 22 and a dry film unexposed portion 21 .

A developing solution is used to remove the unexposed portion 21 of the dry film to form an opening, and a solder ball 30 is formed on the circuit pattern 10 of the opening.

Next, the exposed portion 22 of the dry film is removed by using the stripping composition for removing the dry film photoresist of the present invention.

By using the stripping composition of the present invention, the corrosion of the circuit pattern 10 existing on the lower layer of the dry film exposed portion 22 and the solder balls 30 on the circuit pattern 10 can be minimized and the dry film exposed portion 22 can be completely removed. .

In addition, the method for stripping the dry film photoresist may further include washing the dry film photoresist residue after removing the exposed portion 22 of the dry film.

Since the residue of the exposed portion 22 of the dry film is not dissolved in the stripping composition during the process of removing the exposed portion 22 of the dry film, the stripping composition can be reused.

Additionally, exposing the exposed portion of the dry film to the stripping composition for removing the dry film photoresist can be performed in less than 5 hours, less than 3 hours, or less than 2 hours.

FIG. 4 is a graph showing the increased stripping speed by the stripping composition for removing dry film photoresist according to an embodiment of the present invention.

Referring to FIG. 4 , when the dry film resist was stripped using a conventional stripping composition (comparative example) for removing the dry film resist including tetramethylammonium hydroxide (TMAH), no stripping occurred after 24 hours. On the other hand, when the dry film photoresist was stripped using the stripping composition for removing dry film photoresist comprising triethylmethylammonium hydroxide (TEMAH) of the present invention, stripping occurred from 30 minutes and Complete within 2 hours to 3 hours.

A traditional stripping composition (comparative example) for removing dry film photoresists is the product NRS-J (NR G&C Company), which includes TMAH, monoethanolamine (monoethanolamine, MEA) and N-methylpyrrolidone (N- methylpyrrolidone, NMP).

Hereinafter, the present invention will be explained in more detail with reference to examples and comparative examples. However, the scope of the present invention is not limited by the following exemplary embodiments.

Example 1 to Example 12

The stripping compositions for removing dry film photoresists of Examples 1 to 12 were prepared by stirring at room temperature (25° C.) for about 2 hours using the components and amounts in Table 1 below.

In order to measure the peeling strength of the peeling composition for removing the dry film photoresist of Examples 1 to 12, the pattern of the dry film photoresist is achieved as line (L)/space (S)=1 micron/3 micron, And then electrolytic copper plating was performed to form copper wiring. The resultant was immersed in a stripping composition at 50° C. for 2 minutes to strip the dry film photoresist. The stripped/unstrapped mesh was determined by fluorescence microscopy. The peel strength was compared to the number of unpeeled remaining patterns out of the total number of patterns, And the results are shown in Table 1 and FIG. 1 .

FIG. 1 is a graph showing improved peel strength by a peel composition for removing dry film photoresist according to an embodiment of the present invention.

Comparative Example 1 to Comparative Example 12

The stripping compositions for removing dry film photoresists of Comparative Examples 1 to 12 were prepared by stirring at room temperature (25° C.) for about 2 hours using the components and amounts in Table 1 below.

In order to measure the peeling strength of the peeling composition for removing the dry film photoresist of Comparative Example 1 to Comparative Example 12, the pattern of the dry film photoresist was achieved as line (L)/space (S)=1 micron/3 microns, and then electrolytic copper plating was performed to form copper wiring. The resultant was immersed in a stripping composition at 50° C. for 2 minutes to strip the dry film photoresist. Peeled/unpeeled meshes were determined by fluorescence microscopy. The peel strength was compared with the number of unpeeled remaining patterns in the total number of patterns, and the results are shown in Table 1 and FIG. 1 .

Example 13 to Example 24

4% by weight of TEMAH, 4% by weight of MEA and the amount of organic solvent shown in Table 2 were stirred at room temperature (25°C) for about 2 hours to provide examples 13 to 24 for removing dry film photoresists stripping composition.

In order to measure the peeling strength of the peeling composition for removing the dry film photoresist of Examples 13 to 24, the pattern of the dry film photoresist is achieved as line (L)/space (S)=1 micron/3 micron, And then electrolytic copper plating was performed to form copper wiring. The resultant was immersed in a stripping composition at 50° C. for 2 minutes to strip the dry film photoresist. Peeled/unpeeled meshes were determined by fluorescence microscopy. The peel strength was compared with the number of unpeeled remaining patterns out of the total number of patterns, and the results are shown in Table 2 and FIG. 2 .

2 is a graph showing peel strength based on an organic solvent in a peel composition for removing a dry film photoresist according to an embodiment of the present invention.

Comparative Example 13 to Comparative Example 24

4% by weight of TEMAH, 4% by weight of MEA, and an organic solvent in the amount shown in Table 2 were stirred at room temperature (25° C.) for about 2 hours to provide comparative examples 13 to 24 for removing dry films. Stripping composition for photoresists.

In order to measure Comparative Example 13 to Comparative Example 24 for removing the dry film photoresist Peeling off the peel strength of the composition, the pattern of the dry film resist was achieved as line (L)/space (S)=1 μm/3 μm, and then electrolytic copper plating was performed to form copper wiring. The resultant was immersed in a stripping composition at 50° C. for 2 minutes to strip the dry film photoresist. Peeled/unpeeled meshes were determined by fluorescence microscopy. The peel strength was compared with the number of unpeeled remaining patterns out of the total number of patterns, and the results are shown in Table 2 and FIG. 2 .

Example 25 to Example 56

The stripping compositions for removing dry film photoresists of Examples 25 to 56 were prepared by stirring at room temperature (25° C.) for about 2 hours using the components and amounts in Table 3 below.

In order to measure the peeling strength of the peeling composition for removing the dry film photoresist of Examples 25 to 56, the pattern of the dry film photoresist is achieved as line (L)/space (S)=1 micron/3 micron, And then electrolytic copper plating was performed to form copper wiring. The resultant was immersed in a stripping composition at 50° C. for 2 minutes to strip the dry film photoresist. Peeled/unpeeled meshes were determined by fluorescence microscopy. The peel strength was compared with the number of unpeeled remaining patterns in the total number of patterns, and the results are shown in Table 3 and FIG. 3 .

3 is a graph showing peel strength based on component concentrations in a peel composition for removing dry film photoresist according to an embodiment of the present invention.

Example 57 to Example 74

4% by weight of TEMAH, 7% by weight of MEA, 7% by weight of DEGBE, and the amount of organic solvent shown in Table 4 were stirred at room temperature (25° C.) for about 2 hours to provide examples 57 to 74 for use in Remove the stripping composition of the dry film photoresist.

The etch rates (microns) that occurred using the stripping compositions for removing dry film photoresists of Examples 57 to 74 were compared and shown in Table 4.

Comparative Example 25 to Comparative Example 34

4% by weight of TEMAH, 7% by weight of MEA, 7% by weight of DEGBE, and an organic solvent in an amount shown in Table 4 were stirred at room temperature (25° C.) for about 2 hours to provide Comparative Examples 25 to 34. Stripping composition for removing dry film photoresists.

Etching rates (μm) occurring using the stripping compositions for removing dry film resists of Comparative Example 25 to Comparative Example 34 were compared and shown in Table 4.

Measure the peel strength with etch inhibitor and peel strength without etch inhibitor

The effect of adding an etch inhibitor to a stripping composition for removing dry film resists comprising 4 wt. % TEMAH, 7 wt. % MEA, and 7 wt. % DEGBE on the peel strength of dry film resists was determined.

An etch inhibitor was added to the stripping composition for removing dry film photoresist at 55°C, and the stripping time was determined by dipping. Compare this stripping time with when not adding The stripping times determined with the addition of etch inhibitors were compared. The results are shown in FIG. 5 .

As shown in FIG. 5, when an etch inhibitor was added to the stripping composition (Example) for removing the dry film resist, etching was inhibited, but the peel strength was similar to that without the addition of the etch inhibitor. That is, it should be noted that the stripping time is less than 10 minutes and the etch rate is 0.04 microns.

On the other hand, as shown in FIG. 5, it should be noted that the conventional stripping composition (comparative example) for removing the dry film resist was not stripped even after 10 minutes.

Etching effect analysis according to the number of stripping

Focused ion beam (FIB) analysis was performed to judge whether the etching effect varied according to the number of lift-offs (1 time, 3 times, 5 times), and the results are shown in FIG. 6 .

As shown in FIG. 6 , in the case of using a stripping composition (example) for removing a dry film resist comprising 4 wt % of TEMAH, 7 wt % of MEA, and 7 wt % of DEGBE, the number of stripping There was no significant difference in increasing the etch effect. However, in the case of using a conventional stripping composition for removing dry film photoresist (comparative example), as the number of stripping increases, the top width decreases, and the number of stripping affects the etching effect.

Concentration Analysis of Organic Additives

There is no analytical method for analyzing the concentration of glycol ethers as organic additives in the stripping composition for stripping the photoresist layer.

The surface tension of glycol ethers was measured by dynamic surface tension (DST) method. The relationship between surface tension and the concentration of glycol ethers was discovered The degree changes proportionally (Figure 7). Thereby, it was confirmed that the concentration of the organic additive in the stripping composition for removing the dry film resist can be monitored.

It was also judged whether the concentration of organic additives could be monitored by the DST method in the case of adding etch inhibitors (TTA or 5-AT) to the stripping composition for removing dry film photoresist.

It was determined that the surface tension was constant before and after addition of an etch inhibitor to the stripping composition for dry film photoresist removal. Therefore, it was confirmed that the concentration of the organic additive can be monitored by the DST method even when the etching inhibitor is contained therein ( FIGS. 8A and 8B ).

Although the present invention has been described with reference to specific embodiments, it should be understood that those skilled in the art can make without departing from the spirit and scope of the embodiments herein as defined by the appended claims and their equivalents. Various changes and modifications. Accordingly, the examples described herein are for illustration only and are not intended to limit the present disclosure. The scope of the present disclosure should be interpreted by the following patent claims, and it should be understood that all spirits equivalent to the following patent claims fall within the scope of the present disclosure.

Claims (10)

A stripping composition for removing dry film photoresist, comprising: 1 to 7 parts by weight of triethylmethylammonium hydroxide (TEMAH), tetraethylammonium hydroxide (TEAH) or a mixture thereof; 1 A chain amine compound to 10 parts by weight; and an organic solvent from 1 to 10 parts by weight; wherein the stripping composition for removing dry film photoresist does not contain tetramethylammonium hydroxide (TMAH); And wherein the organic solvent includes at least one of diethylene glycol monobutyl ether (DEGBE) and ethylene glycol monobutyl ether (EGBE). The stripping composition for removing dry film photoresist as described in item 1 of the patent claims includes triethylmethylammonium hydroxide compound. The stripping composition for removing dry film photoresist as described in item 1 of the patent claims includes 1 to 5 parts by weight of triethylmethylammonium hydroxide or tetraethylammonium hydroxide compound. The stripping composition for removing dry film photoresist as described in claim 1, wherein the chain amine compound is monoethanolamine. The stripping composition for removing dry film photoresist as described in claim 1 further comprises 0.1 to 0.5 parts by weight of a triazole compound or a tetrazole compound. The stripping composition for removing dry film photoresist as described in claim 5, wherein the triazole compound is tolyltriazole. The stripping composition for removing dry film photoresist as described in claim 1, wherein the concentration of the organic solvent is analyzed by dynamic surface tension (DST). A method for stripping a dry film photoresist, comprising: laminating a dry film on a substrate on which a predetermined circuit pattern is formed; partially exposing the laminated dry film to form an exposed part of the dry film and a dry film unexposed part; developing and removing the unexposed part of the dry film to form an opening; Stripping composition for removing dry film photoresist. The method for stripping a dry film photoresist as described in item 8 of the scope of the patent application further includes the step of exposing the exposed part of the dry film to the stripping composition for removing the dry film photoresist. Dry film photoresist residues are washed. The method for stripping a dry film photoresist as described in item 8 of the patent scope of the application, wherein the step of exposing the exposed part of the dry film to the stripping composition for removing the dry film photoresist is carried out for 3 hours or less than 3 hours.

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