KR20170097256A - Remover composition for dryfilm resist and removing method using the same - Google Patents

Abstract

The present invention relates to a dry film resist stripper composition, and a method for removing dry film resist using the same. In an attempt to increase release force and minimize bubble formation in stripping solutions during a process for spraying the stripping solution containing organic solvents, the dry film resist stripper composition contains a specific type of block copolymer.

Description

Technical Field [0001] The present invention relates to a dry film resist stripping composition and a dry film resist removing method using the same.

The present invention relates to a dry film resist stripper composition and a method for removing a dry film resist using the same.

Generally, a manufacturing process of a printed wiring board includes a step of uniformly applying a photoresist on a metal film and an insulating film and then forming a photoresist pattern through selective exposure and development with a photomask, using a patterned photoresist film as a mask A step of wet or dry etching the conductive metal film or the insulating film, or a step of removing a unnecessary photoresist film by a removing solution after forming a fine circuit pattern through plating of the conductive metal film.

[0003] However, demands for electronic devices are demanded not only for miniaturization and weight reduction but also for high-speed communication and large-capacity communication. In addition, demands for miniaturization of electronic parts, an increase in the number of components, and an increase in the number of LSI input / output have been continuously continuing. From the viewpoint of one side, miniaturization, and weight reduction, there is a restriction on the area of a printed wiring board on which such electronic parts are mounted, and it is difficult to design a wiring board larger than necessary. Therefore, it is required to form wiring of a higher density for the printed wiring board.

A typical circuit forming method in a printed wiring board is a subtractive method in which an unnecessary portion is etched and removed. This method has an advantage in that circuit processing is simple, but has limitations in microfabrication. This limitation arises because the linewidths of the upper and lower circuits are different. In the etching mechanism, the upper part of the circuit is etched faster than the lower part and the etching conditions are used to completely remove the anchor copper in the lower part of the circuit .

Therefore, the semi-permanent method is advantageous for microcircuit processing. This method forms a circuit by plating, but there is little difference in line width between the top and bottom of the circuit.

However, the semi-permanent method has a disadvantage in that the difficulty of the dry film resist (DFR) peeling process corresponding to the plating resist is increased.

However, when an inorganic acid or an inorganic base is used as an effective constituent component of the release agent, it is common to use an organic solvent because corrosion of the lower metal film is accompanied by disadvantages such as corrosion or harmful effects on the human body. Amine releasing agents accompanied by amines are widely used.

Korean Patent Publication No. 2000-0046480

Therefore, in the present invention, it is possible to minimize the occurrence of bubbles in the peeling liquid and improve the peeling force during the spray treatment of the peeling liquid containing an organic solvent by adding a specific type of block copolymer to the peeling agent composition containing an organic solvent, The invention was completed on this basis.

Accordingly, the first aspect of the present invention is to provide a dry film resist stripper composition comprising a specific type of block copolymer in order to minimize bubbling in the stripper solution and improve the peeling force during the spray treatment of the stripper solution containing an organic solvent .

A second aspect of the present invention is to provide a method for removing a dry film resist using the dry film resist stripper composition.

A dry film resist stripper composition according to one aspect of the present invention comprises 0.2 part by weight to 5 parts by weight of a hydroxide compound; 2 to 10 parts by weight of a chain-like amine compound; 1 part by weight to 10 parts by weight of an organic solvent; And 0.00001 part by weight to 0.01 part by weight of a nonionic surfactant selected from the group consisting of compounds represented by the following formula (I) or (II) and mixtures thereof.

R1- (EO) a (PO) b (I)

R1- (EO) a '(PO) b'-R2       (II)

In the formulas (I) and (II), R1 and R2 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, a phenyl group and a styrene group , A 'and b' are integers of 0 to 100, a 'and b' are not 0 at the same time, EO is an oxyethylene group, PO is an oxypropylene group, a and b are an integer of 1 to 100, And the addition form of PO is block type.

A dry film resist stripper composition according to another aspect of the present invention comprises 0.2 part by weight to 5 parts by weight of a hydroxide-based compound; 2 to 15 parts by weight of a chain-like amine compound; 1 part by weight to 15 parts by weight of an organic solvent; And 0.00001 parts by weight to 0.01 parts by weight of a nonionic surfactant selected from the group consisting of compounds represented by the following formula (III) or (IV) and mixtures thereof.

(EO) x (PO) y (EO) x (III)

(PO) x (EO) y (PO) x (IV)

In the formulas (III) and (IV), EO represents an oxyethylene group, PO represents an oxypropylene group, x and y are integers of 1 or more, and the addition form of EO and PO is a block type.

The hydroxide-based compound may be an inorganic alkali hydroxide or an alkylammonium hydroxide.

Wherein said alkylammonium hydroxide is selected from the group consisting of tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, trimethylbenzylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide , Triethylmethylammonium hydroxide, or a mixture thereof.

The alkylammonium hydroxide may be tetramethylammonium hydroxide.

The chain amine compound may be selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, 2- (2-aminoethoxy) N-dimethylethanolamine, N, N-diethylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine and N-methylethanolamine Amine, and the like.

The chain amine compound may be monoethanolamine.

The organic solvent may be one or a mixture of two or more selected from the group consisting of alcohols, glycols, glycol ethers, lactones, lactams, ketones and esters.

The composition may further comprise a balance of pure water.

According to another aspect of the present invention, there is provided a dry film resist removing method comprising: laminating a dry film on a substrate on which a predetermined circuit pattern is formed; Partially exposing the laminated dry film to form a dry film exposing part and a dry film unexposed part; Developing and removing the dry film non-visible portion to form an opening; And contacting the composition with the dry film exposed portion.

And washing the dry film resist residue after the contacting step.

The contacting step may be carried out at 35 DEG C or higher.

The dry film resist stripper composition according to one embodiment of the present invention can minimize the occurrence of bubbles in the stripper liquid during the spraying process of the stripper liquid including the organic solvent and improve the stripping force. Therefore, it is possible to improve the fine line width and the degree of difficulty of the peeling process of the high-grade product.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing bubble generation inhibition and improved peeling force by a dry film resist stripping composition according to an embodiment of the present invention. FIG. (a) The peeling liquid (b) according to the present invention The conventional peeling liquid
2 is a process diagram showing a method of removing a dry film resist using a dry film resist stripper composition according to an embodiment of the present invention.

Before describing the present invention in more detail, it is to be understood that the words or words used in the present specification and claims should not be construed in a conventional or dictionary sense, It should be construed as meaning and concept consistent with the technical idea of the present invention based on the principle that it can be defined.

Therefore, the constitution of the embodiment described in this specification is merely an example of the present invention, and not all of the technical ideas of the present invention are described. Therefore, various equivalents and modifications It should be understood.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

A dry film resist stripper composition according to exemplary embodiments of the present invention includes a hydroxide-based compound, a chain-like amine compound, an organic solvent, and a nonionic surfactant.

Hydroxide system  compound

The hydroxide-based compound in the dry film resist stripper composition according to exemplary embodiments of the present invention is an inorganic alkali hydroxide or an alkylammonium hydroxide. The alkylammonium hydroxide may be selected from the group consisting of tetraethyl ammonium hydroxide (TEAH), tetramethylammonium hydroxide (TMAH), ethyltrimethylammonium hydroxide (ETMAH) (DEM), triethylmethylammonium hydroxide (TEMAH), tetrabutyl ammonium hydroxide, trimethylbenzyl ammonium hydroxide, and the like. Or a mixture thereof can be used, and it is most appropriate to use tetramethylammonium hydroxide (TMAH).

In the exfoliant composition, the hydroxide-based compound is not particularly limited, but may have an amount of 0.2 to 5 parts by weight, particularly 0.2 to 2 parts by weight. If the amount of the hydroxide compound is less than 0.2 part by weight, the ability to penetrate into the polymer material constituting the dry film resist may be deteriorated, so that it may be difficult to completely remove the dry film resist. If the amount exceeds 5 parts by weight, There is a possibility that there may be adverse effects.

Chain type  Amine compound

In another exemplary embodiment of the present invention, the chain amine compound in the dry film resist stripper composition is selected from the group consisting of monoethanol amine, diethanol amine, triethanol amine, propanol amine, Propanol amine, tripropanol amine, isopropanol amine, diisopropanol amine, triisopropanol amine, 2- (2-aminoethoxy) ethanol (2 2-aminoethoxy ethanol, 2- (2-aminoethylamino) ethanol, N, N-dimethylethanol amine, N, N- N, N-diethylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine and N- (N-methylethanol amine) Can be used one or more from the group eojin, the use of monoethanolamine is most suitable.

In the exfoliant composition, the chain type amine compound is not particularly limited, but may have an amount of 2 to 15 parts by weight, particularly 5 to 9 parts by weight. If the amount of the chain amine compound used is less than 2 parts by weight, it may be difficult to completely remove the dry film resist. If the amount exceeds 15 parts by weight, the content of other materials contained in the release agent composition may be lowered, Becomes longer, and bubbles are generated, and the metal film may be corroded.

Organic solvent

The organic solvent in the dry film resist stripper composition according to exemplary embodiments of the present invention is a water-soluble organic solvent and may be one or more selected from the group consisting of alcohols, glycols, glycol ethers, lactones, lactams, ketones, Mixtures of two or more species can be used, and gamma -butyrolactone is most suitable.

 The content of the organic solvent in the exfoliant composition is not particularly limited, but it may have an amount of 1 to 15 parts by weight, particularly 1 to 9 parts by weight. If the amount of the organic solvent is less than 1 part by weight, it may be difficult to completely remove the dry film resist. If the amount is more than 15 parts by weight, the content of the other materials contained in the releasing composition may be lowered, And bubbles may be generated, and the metal film may be corroded.

Surfactants

A dry film resist stripper composition according to exemplary embodiments of the present invention contains a surfactant of a block copolymer having a specific structure as an essential component. The nonionic surfactant in the composition of the present invention may be selected from the group consisting of the compounds represented by the following formula (I) or (II) and mixtures thereof.

R1- (EO) a (PO) b (I)

R1- (EO) a '(PO) b'-R2       (II)

In the formulas (I) and (II), R 1 and R 2 are each independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, a phenyl group and a styrene group. EO represents an oxyethylene group, PO represents an oxypropylene group, a and b are an integer of 1 to 100, and a 'and b' are an integer of 0 to 100, preferably 1 to 15. a 'and b' are not 0 at the same time, and the addition form of EO and PO is block type.

Further, the surfactant may be selected from the group consisting of a compound represented by the following formula (III) or (IV) and a mixture thereof

(EO) x (PO) y (EO) x (III)

(PO) x (EO) y (PO) x (IV)

In the formulas (III) and (IV), EO represents an oxyethylene group, PO represents an oxypropylene group, x and y may be an integer of 1 or more and preferably 1 to 100, Type.

(Block including EO) - (block including PO) - (block including EO) - (block including EO) - (block including EO) - (Block containing PO) - (block containing PO) - (block containing PO) - (block containing PO) - (block containing PO) - (block containing PO)

Generally, the surfactant of the block copolymer of the A-B-A type has both a hydrophobic block and a hydrophilic block, and can also act as a defoaming agent at a specific temperature. When the process temperature is fixed, such as the exfoliation solution, the use of a block copolymer having an appropriate ratio of A and B can have both a surfactant property and a defoamer property. By blending the surfactant with the exfoliant composition, the problem caused by the bubbles can be solved by the bubble resistance.

The content of the surfactant in the exfoliant composition is not particularly limited, but it may have an amount of 0.00001 to 0.01 part by weight, particularly 0.00001 to 0.001 part by weight. If the amount of the organic solvent used is less than 0.00001 parts by weight, it may be difficult to completely remove the bubbles and the dry film resist. If the amount is more than 0.01 parts by weight, the bubbling effect may be lowered or not completely dissolved.

pure ( H ₂ O )

The pure water in the dry film resist stripper composition according to the exemplary embodiment of the present invention uses pure water filtered through an ion exchange resin, and it may be appropriate that the resistivity is 18 (MΩ) or more.

The amount of pure water to be used in the exfoliant composition is not particularly limited, but an amount that is not affected by the composition ratio of the above-mentioned other composition can be used.

The dry film resist stripper composition may further comprise other components as long as the effect of the present invention is not impaired. Such components may include a glycol, an organic acid, a surfactant, an organic solvent, a defoamer, or a mixture thereof.

A method of removing a dry film resist using a release agent composition according to exemplary embodiments of the present invention can be found through a process diagram as shown in FIG. The dry film 20 is laminated on the substrate 100 on which the predetermined circuit pattern 10 is formed and the laminated dry film is partially exposed to expose the dry film exposing portion 22 and the dry film non- . The dry film exposing portion 21 is removed with a developing solution to form an opening portion, and a solder ball 30 is formed on the circuit pattern 10 of the opening portion. Then, the dry film unexposed portion 21 is removed using the dry film resist stripper composition of the present invention. The use of the release agent composition of the present invention minimizes the corrosion of the circuit pattern 10 present in the lower layer of the dry film unexposed portion 21 and the solder ball 30 placed on the circuit pattern 10, The non-visible light portion 21 can be completely removed. Also, in the removal agent composition of the present invention, since the residue of the dry film unexposed portion 21 is not dissolved in the release agent composition during the removal of the dry film unexposed portion 21, the release agent composition can be reused later .

In addition, the method of removing the dry film resist may further include washing the dry film resist residue after removing the dry film unexposed portion 21.

In the method of removing the dry film resist of the present invention, the contact step can be carried out at 35 DEG C or higher, and a defoaming effect is expected appropriately even at a high temperature.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the scope of the present invention is not limited to the following examples.

Example 1

A block copolymer composed of 1% of TMAH, 8% of MEA and 6% of? -Butyrolactone was added in an amount of 0.0005% in the form of EO-PO-EO type block copolymer. (25 DEG C) for about 2 hours to prepare a release film for a dry film resist.

Example 2

The same as Example 1 except that 0.001% of a block copolymer in the form of EO-PO-EO was added and a dry film resist peeling solution was prepared using the components and composition ratios shown in Table 1.

Example 3

The same as Example 1 except that 0.0005% of a block copolymer in the form of R-PO-EO was added instead of the EO-PO-EO type block copolymer, and a dry film resist peeling solution was prepared using the components and composition ratios shown in Table 1 Respectively.

Example 4

Except that 0.001% of a block copolymer in the form of R-PO-EO was added instead of the block copolymer in the form of EO-PO-EO to prepare a dry film resist stripper using the components and composition ratios shown in Table 1 Respectively.

Example 5

The same as Example 1, except that 3% of TMAH was added instead of 1% of TMAH, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Example 6

The same as Example 1 except that 4% MEA was used instead of 8% MEA, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Example 7

Same as in Example 1 but 3% of γ-butyrolactone was added instead of 6% of γ-butyrolactone, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Example 8

The procedure of Example 1 was repeated except that 0.5% of TMAH was added instead of 1% of TMAH, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Example 9

The same as in Example 1, except that 12% of MEA was added instead of 8% of MEA, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Example 10

Same as Example 1, but 9% of γ-butyrolactone was added instead of 6% of γ-butyrolactone, and the components and the composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 1

The procedure of Example 1 was repeated except that TMAH 0.1% was added instead of TMAH 1%, and the components and composition ratios shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 2

The same as Example 1, except that 1% of MEA was added instead of 8% of MEA, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 3

Except that the EO-PO-EO type block copolymer and? -Butyrolactone were excluded, and the components and the composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 4

The same procedure as in Comparative Example 3 was carried out except that 2% of? -Butyrolactone was added and a dry film resist peeling solution was prepared using the components and composition ratios shown in Table 1.

Comparative Example 5

6% of? -Butyrolactone was added, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 6

The procedure of Example 1 was repeated except that 6% of TMAH was added instead of 1% of TMAH, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 7

The same as in Example 1 except that 16% of MEA was added instead of 8% of MEA, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 8

The procedure of Example 1 was repeated except that 16% of γ-butyrolactone was added instead of 6% of γ-butyrolactone, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 9

The same as Example 1, except that 0.5% of? -Butyrolactone was added instead of 6% of? -Butyrolactone, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 10

Except that 0.0005% of EO-PO random copolymer was added instead of 0.0005% of EO-PO-EO type block copolymer, and the components and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution.

Comparative Example 11

Except that 0.000005% of EO-PO-EO type block copolymer was added instead of 0.0005% of EO-PO-EO type block copolymer and the composition and composition ratio shown in Table 1 were used to prepare a dry film resist peeling solution .

Comparative Example 12

Except that 0.02% of a block copolymer of EO-PO-EO type was added instead of 0.0005% of a block copolymer of the EO-PO-EO type and the components and composition ratio shown in Table 1 were used, .

Whether or not the package Peel force  Measurement test

The Bartsch method (Bartsch method) was used to measure the time of bubble removal of the exfoliant compositions prepared according to Examples and Comparative Examples. The release agent composition was shaken to form a certain amount of bubbles, and the time for which the bubbles completely disappeared was measured.

In order to measure the peeling force, a pattern of a dry film resist was obtained at a line / space of 8 mu m / 8 mu m, followed by electrolytic copper plating to form a copper wiring and immersed in a 50 DEG peeling composition for 2 minutes to peel off the dry film resist. Whether peeling or not peeling off was judged by fluorescence microscopy (poor XX- X-? -? - good)

TMAH
(weight %) MEA
(weight %) abandonment
additive
(weight %) Surfactants
(weight %) water
(weight %) Peel force parcel
time
(second) Example 1 One 8 6 EO-PO-EO 0.0005 85 ◎ 5 Example 2 One 8 6 EO-PO-EO 0.001 85 ◎ 30 Example 3 One 8 6 R-EO-PO 0.0005 85 ◎ 7 Example 4 One 8 6 R-EO-PO 0.001 85 ◎ 3 Example 5 3 8 6 EO-PO-EO 0.0005 83 ◎ 8 Example 6 One 4 6 EO-PO-EO 0.0005 89 ◎ 5 Example 7 One 8 3 EO-PO-EO 0.0005 88 ○ 3 Example 8 0.5 8 6 EO-PO-EO 0.0005 85.5 ○ 5 Example 9 One 12 6 EO-PO-EO 0.0005 81 ◎ 10 Example 10 One 8 9 EO-PO-EO 0.0005 82 ◎ 20 Comparative Example 1 0.1 8 6 R-EO-PO 0.0005 85.9 X 5 Comparative Example 2 One One 6 R-EO-PO 0.0005 92 △ 5 Comparative Example 3 One 8 0 0 91 X 8 Comparative Example 4 One 8 2 0 89 △ 40 Comparative Example 5 One 8 6 0 85 ○ 300 Comparative Example 6 6 8 6 EO-PO-EO 0.0005 80 ◎ 10 Metal film corrosion occurred Comparative Example 7 One 16 6 EO-PO-EO 0.0005 75 ◎ 20 Metal film corrosion occurred Comparative Example 8 One 8 16 EO-PO-EO 0.0005 75 ◎ 300 Comparative Example 9 One 8 0.5 EO-PO-EO 0.0005 90.5 X 3 Comparative Example 10 One 8 6 EO- ran -PO 0.0005 85 ○ 300 Comparative Example 11 One 8 0.5 EO-PO-EO 0.000005 85 ○ 300 Comparative Example 12 One 8 0.5 EO-PO-EO 0.02 85 ◎ 300

(Bad XX- X-? - O -? Good)

In the line / space = 8/8 micron pattern, which was not easy in the conventional release solution, the release agent composition according to the present invention exhibited a good peeling force.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the same is by way of illustration and example only and is not to be construed as limiting the present invention. It can be seen that it can be modified or improved.

It is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

10: circuit pattern 20: dry film
21: dry film non-exposure part 22: dry film exposure part
30: solder ball 100: substrate

Claims (12)

0.2 part by weight to 5 parts by weight of a hydroxide-based compound;
2 to 15 parts by weight of a chain-like amine compound;
1 part by weight to 10 parts by weight of an organic solvent; And
0.00001 parts by weight to 0.01 parts by weight of a nonionic surfactant selected from the group consisting of compounds represented by the following formula (I) or (II) and mixtures thereof;
A dry film resist stripper composition
R1- (EO) a (PO) b (I)
R1- (EO) a '(PO) b'-R2 (II)
In the formulas (I) and (II), R1 and R2 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, an alkenyl group having 2 to 5 carbon atoms, a phenyl group and a styrene group , A 'and b' are integers of 0 to 100, a 'and b' are not 0 at the same time, EO is an oxyethylene group, PO is an oxypropylene group, a and b are an integer of 1 to 100, And the addition form of PO is block type. 0.2 part by weight to 5 parts by weight of a hydroxide-based compound;
2 to 15 parts by weight of a chain-like amine compound;
1 part by weight to 10 parts by weight of an organic solvent; And
0.00001 parts by weight to 0.01 parts by weight of a nonionic surfactant selected from the group consisting of a compound represented by the following formula (III) or (IV) and a mixture thereof;
A dry film resist stripper composition
(EO) x (PO) y (EO) x (III)
(PO) x (EO) y (PO) x (IV)
In the formulas (III) and (IV), EO represents an oxyethylene group, PO represents an oxypropylene group, x and y are integers of 1 or more, and the addition form of EO and PO is a block type. 3. The method according to claim 1 or 2,
Wherein the hydroxide-based compound is an inorganic alkali hydroxide or an alkylammonium hydroxide. The method of claim 3,
Wherein said alkylammonium hydroxide is selected from the group consisting of tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, trimethylbenzylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide , Triethylmethylammonium hydroxide, or mixtures thereof. The method of claim 3,
Wherein the alkylammonium hydroxide is tetramethylammonium hydroxide. 3. The method according to claim 1 or 2,
The chain amine compound may be selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, 2- (2-aminoethoxy) N-dimethylethanolamine, N, N-diethylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine and N-methylethanolamine Amine. ≪ / RTI > The method according to claim 6,
Wherein the chain amine compound is a monoethanol amine. 3. The method according to claim 1 or 2,
Wherein the organic solvent is one or a mixture of two or more selected from the group consisting of alcohols, glycols, glycol ethers, lactones, lactams, ketones and esters. 3. The method according to claim 1 or 2,
Wherein the composition further comprises a balance of pure water. Laminating a dry film on a substrate on which a predetermined circuit pattern is formed;
Partially exposing the laminated dry film to form a dry film exposing part and a dry film unexposed part;
Developing and removing the dry film non-visible portion to form an opening; And
Contacting the composition according to claim 1 or 2 to the dry film exposure section;
And removing the dry film resist. 11. The method of claim 10,
Washing the dry film resist residue after the contacting step;
≪ / RTI > 11. The method of claim 10,
Wherein the step of contacting is carried out at 35 DEG C or higher.

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