CN101162369A - Low etching photoresist cleaning agent and cleaning method thereof - Google Patents
Low etching photoresist cleaning agent and cleaning method thereof Download PDFInfo
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- CN101162369A CN101162369A CNA2006101171385A CN200610117138A CN101162369A CN 101162369 A CN101162369 A CN 101162369A CN A2006101171385 A CNA2006101171385 A CN A2006101171385A CN 200610117138 A CN200610117138 A CN 200610117138A CN 101162369 A CN101162369 A CN 101162369A
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- out system
- low etching
- etching property
- ether
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- Cleaning Or Drying Semiconductors (AREA)
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Abstract
The invention discloses a photoresist cleaning agent with low etching ability and cleaning method. The photoresist cleaning agent with low etching ability comprising dimethyl sulfoxide and quaternary ammonium hydroxide is characterized in that the photoresist cleaning agent also comprises alkyl diol aryl ether or derivatives thereof which has a general formula (1), wherein, R1 is the aryl, R2 is H or the aryl, m is equal to from 2 to 6, and n is equal to from 1 to 6. The cleaning agent can be used for removing photoresist (photoresistant) and other residues from metal, metal alloy or dielectric basis material with a quite low etching rate on metals like silicon dioxide, Cu (copper) and material with low K, thereby having good application prospect in the micro-electronic field like semiconductor chip cleaning.
Description
Technical field
The present invention relates to cleaning field in the semiconductor manufacturing, be specifically related to a kind of photoresist clean-out system and cleaning method thereof of low etching property.
Background technology
In common semiconductor fabrication process, on the surface of metal such as silicon dioxide, copper or low-k materials etc., form earlier the mask of photoresist, utilize wet method or dry etching to carry out figure transfer after the exposure.Carry out in the chemical cleaning process of photoresist at semiconductor wafer, the clean-out system of higher pH can cause the corrosion of wafer substrate.Particularly utilizing chemical to remove in the process of metal etch residue, metal erosion is comparatively generally and very serious problem, often causes the remarkable reduction of wafer yield.In addition, make cleaning realize that low temperature is the important directions of this area development fast.
Therefore, reducing the metal erosion in the cleaning process, will guarantee also that simultaneously the low temperature of cleaning is quick, is this area problem demanding prompt solution.Patent documentation WO03104901 utilizes Tetramethylammonium hydroxide (TMAH), sulfolane (SFL), anti--1,2-CDTA (CyDTA) and water etc. are formed alkaline cleaner, wafer is immersed in this clean-out system, in 50～70 ℃ of following submergence 20～30min, remove the photoresist on metal and the dielectric substrate.But this clean-out system is slightly high to the corrosion of semiconductor wafer base material, and can not remove the photoresist of semiconductor wafer, cleansing power deficiency fully.Patent documentation WO04059700 utilizes Tetramethylammonium hydroxide (TMAH), N-methylmorpholine N-oxide (MO), 2-mercaptobenzimidazole (MBI) and water etc. to form alkaline cleaner, wafer is immersed in this clean-out system, in 70 ℃ of following submergence 15～60min, remove the photoresist on metal and the dielectric substrate.But its cleaning temperature is higher, and cleaning speed is relatively slow, is unfavorable for improving the cleaning efficiency of semiconductor wafer.Patent documentation JP1998239865 utilizes TMAH, dimethyl sulfoxide (DMSO) (DMSO), 1,3 '-dimethyl-2-imidazolidinone (DMI) and water etc. are formed alkaline cleaner, wafer is immersed in this clean-out system the thick film photolithography glue more than the 20 μ m that remove under 50～100 ℃ on metal and the dielectric substrate.But its higher cleaning temperature can cause the corrosion of semiconductor die plate substrate.JP2001215736 utilizes Tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO) (DMSO), ethylene glycol (EG) and water etc. to form alkaline cleaner, wafer is immersed in this clean-out system, in the photoresist of removing under 50～70 ℃ on metal and the dielectric substrate.Equally, its higher cleaning temperature can cause the corrosion of semiconductor die plate substrate.JP200493678 utilizes TMAH, N-Methyl pyrrolidone (NMP), water or methyl alcohol etc. to form alkaline cleaner, wafer is immersed in this clean-out system, in the photoresist of removing under 25～85 ℃ on metal and the dielectric substrate.But the rising of its cleaning temperature makes the corrosion of semiconductor die plate substrate obviously strengthen.
Summary of the invention
The objective of the invention is to reduce the metal erosion in the cleaning process in the semiconductor fabrication process, will guarantee also that simultaneously the low temperature of cleaning is quick, a kind of low etching property photoresist clean-out system is provided.
Above-mentioned purpose of the present invention realizes by following technical proposal: low etching property photoresist clean-out system of the present invention comprises dimethyl sulfoxide (DMSO), quaternary ammonium hydroxide, it is characterized in that also comprising the alkyl diol aryl ether or derivatives thereof of general formula for (1):
R
1OC
mH
2mO
nR
2 (1)
Wherein, R
1Be aryl, R
2Be H or aryl, m=2～6, n=1～6.
Among the present invention, described alkyl diol aryl ether or derivatives thereof is glycol monomethyl phenyl ether, propylene glycol list phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list phenyl ether, the single phenyl ether of dipropylene glycol, di-isopropylene glycol list phenyl ether, glycol monomethyl benzylic ether, propylene glycol single-benzyl ether, Isopropanediol single-benzyl ether, hexanediol list naphthyl ether or six condensed ethandiol diphenyl ethers.Wherein, preferable is glycol monomethyl phenyl ether, propylene glycol list phenyl ether, Isopropanediol list phenyl ether.That its content is preferable is 0.01～98.99wt%, and that better is 5.0～40.0wt%.
Among the present invention, that the content of described dimethyl sulfoxide (DMSO) is preferable is 1～99.98wt%, and that better is 60～95wt%.
Among the present invention, described quaternary ammonium hydroxide is Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, TBAH or benzyltrimethylammonium hydroxide.Wherein, preferable is Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide or TBAH, and more preferable is Tetramethylammonium hydroxide.That its content is preferable is 0.01～15wt%, and that better is 0.5～10.0wt%.
Among the present invention, described low etching property photoresist clean-out system also can comprise polarity organic cosolvent, corrosion inhibiter, surfactant and/or water.That described polarity organic cosolvent content is preferable is 0～98.98wt%, and that better is 10～50wt%; That described corrosion inhibiter content is preferable is 0～15wt%, and that better is 0.05～5.0wt%; That described surface-active contents is preferable is 0～15wt%, and that better is 0.05～5.0wt%; That described liquid water content is preferable is 0～95wt%, and that better is 0.5～25wt%.
Among the present invention, described polarity organic cosolvent is sulfoxide, sulfone, imidazolidinone and/or alkylene glycol monoalkyl ether.
Wherein, described sulfoxide is the diethyl sulfoxide or the first and second basic sulfoxides; Described sulfone is methyl sulfone, ethyl sulfone or sulfolane, and preferable is sulfolane; Described imidazolidinone is a 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone or 1, and 3-diethyl-2-imidazolidinone, preferable is 1,3-dimethyl-2-imidazolidinone; Described alkylene glycol monoalkyl ether is glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, dihydroxypropane single-ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, the single ether of dipropylene glycol or dipropylene glycol monobutyl ether, and preferable is glycol monoethyl ether, diethylene glycol monomethyl ether, propylene glycol monomethyl ether or dipropylene glycol monomethyl ether.
Among the present invention, described surfactant is polyvinyl alcohol (PVA), polyvinylpyrrolidone, polyoxyethylene ether or polysiloxane.
Among the present invention, described corrosion inhibiter is phenols, carboxylic acid (ester) class, anhydrides or phosphonic acids (ester) class corrosion inhibiter.
Wherein, described phenols is 1,2-dihydroxy phenol, para hydroxybenzene phenol or 1,2,3,-thrihydroxy-benzene, and preferable is 1,2,3,-thrihydroxy-benzene; Described carboxylic acid (ester) class is benzoic acid, p-aminobenzoic acid, phthalic acid, gallic acid or n-propyl gallate, and preferable is p-aminobenzoic acid, phthalic acid or gallic acid; Described anhydrides is acetic anhydride, propionic andydride, caproic anhydride or (gathering) maleic anhydride, and preferable is HPMA; Described phosphonic acids (ester) class is 1,3-(hydroxyethyl)-2,4, and 6-tri methylene phosphonic acid, Amino Trimethylene Phosphonic Acid or 2-phosphonic acids butane-1,2, the 4-tricarboxylic acids, preferable is 1,3-(hydroxyethyl)-2,4,6-tri methylene phosphonic acid.
Among the present invention, described low etching property photoresist clean-out system can be made by the simple mixing of top described component.
Another object of the present invention provides the cleaning method that uses above-mentioned low etching property photoresist clean-out system, concrete steps are: under the room temperature to 85 ℃, the semiconductor wafer that will contain photoresist immerses low etching property photoresist clean-out system of the present invention and cleans, and dries up then to get final product.
In the example of the present invention, if cleaning temperature is higher than 45 ℃, wafer can be used the washed with isopropyl alcohol wafer after cleaning with clean-out system again.
In example of the present invention, cleaning way can adopt slow vibration to clean, and what the time was preferable is 10～30 minutes.
In the example of the present invention, low etching property photoresist clean-out system can be used washed with de-ionized water after cleaning again.
In example of the present invention, dry up preferable under high pure nitrogen, the carrying out of step.
Positive progressive effect of the present invention is: described low etching property photoresist clean-out system is because the alkyl diol aryl ether or derivatives thereof that wherein comprises can form layer protecting film on the wafer substrate surface; stop the attack to base material such as halogen atom, hydroxide ion, thereby reduce the corrosion of base material.This clean-out system can be used for removing photoresist (photoresistance) and other residue of the above thickness of 30 μ m on metal, metal alloy or the dielectric substrate, simultaneously have lower etch-rate, have a good application prospect at microelectronics such as semiconductor wafer cleanings for silicon dioxide, Cu metals such as (copper) and low-k materials etc.Its effect will further specify by the contrast experiment among the embodiment.
Embodiment
Mode below by embodiment further specifies the present invention, does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～34 and comparative example 1
Table 1 low etching property photoresist clean-out system embodiment 1～34 and comparative example 1
Effect embodiment 1-9
The clean-out system of embodiment in the table 1 27～34 and comparative example 1 clean-out system are used to clean blank Cu wafer, measure its etch-rate, the results are shown in table 2 metal Cu.Method of testing and condition: blank Cu wafer is immersed clean-out system, under the listed specified temp of table 2, slowly vibrated 30 minutes with constant temperature oscillator, behind deionized water wash, dry up then, utilize four utmost point probe machines to measure blank Cu chip etching front and rear surfaces changes in resistance and calculate the etch-rate of above-mentioned clean-out system metal Cu with high pure nitrogen.
Table 2 embodiment 27～34 and comparative example's 1 clean-out system
To the etch-rate of blank Cu wafer and to the cleansing power of photoresist
| Embodiment | Clean-out system | The pH value | Cu, 25 ℃ of etch-rates, A/min | Photoresist cleans | The photoresist wash result |
| Effect embodiment 1 | Embodiment 27 | 11.88 | 1.54 | 25℃，30min | Fully |
| Effect embodiment 2 | Embodiment 28 | 11.84 | -0.77 | 25℃，30min | Fully |
| Effect embodiment 3 | Embodiment 29 | 11.95 | 0.00 | 25℃，30min | Fully |
| Effect embodiment 4 | Embodiment 30 | 12.01 | 3.72 | 25℃，25min | Fully |
| Effect embodiment 5 | Embodiment 31 | 12.36 | 3.62 | 85℃，10min | Fully |
| Effect embodiment 6 | Embodiment 32 | 12.34 | 3.68 | 25℃，30min | Fully |
| Effect embodiment 7 | Embodiment 33 | 12.38 | 3.26 | 45℃，20min | Fully |
| Effect embodiment 8 | Embodiment 34 | 12.46 | 5.25 | 25℃，25min | Fully |
| Effect embodiment 9 | The comparative example 1 | 11.83 | 11.54 | 25℃，25min | Fully |
Show that by table 2 result compare with comparative example 1 clean-out system, the clean-out system of embodiment 27～34 shows low etching property and good photoresist cleansing power for metal Cu.
Method embodiment 1
Low etching property photoresist clean-out system: 84.35wt% dimethyl sulfoxide (DMSO), 2.50wt% Tetramethylammonium hydroxide, 8.00wt% glycol monomethyl phenyl ether, 0.15wt% polyoxyethylene ether and 5.00wt% water.
Under the room temperature, the semiconductor wafer immersion low etching property photoresist clean-out system that will contain photoresist slowly vibrates and cleans 30min, uses washed with de-ionized water, dries up under the high pure nitrogen afterwards.
Method embodiment 2
Low etching property photoresist clean-out system: 84.35wt% dimethyl sulfoxide (DMSO), 2.50wt% Tetramethylammonium hydroxide, 8.00wt% glycol monomethyl phenyl ether, 0.15wt% polyoxyethylene ether and 5.00wt% water.
Under 45 ℃, the semiconductor wafer immersion low etching property photoresist clean-out system that will contain photoresist slowly vibrates and cleans 20min, uses washed with de-ionized water after washed with isopropyl alcohol, dries up under the high pure nitrogen afterwards.
Method embodiment 3
Low etching property photoresist clean-out system: 84.35wt% dimethyl sulfoxide (DMSO), 2.50wt% Tetramethylammonium hydroxide, 8.00wt% glycol monomethyl phenyl ether, 0.15wt% polyoxyethylene ether and 5.00wt% water.
Under 85 ℃, the semiconductor wafer immersion low etching property photoresist clean-out system that will contain photoresist slowly vibrates and cleans 10min, uses washed with de-ionized water after washed with isopropyl alcohol, dries up under the high pure nitrogen afterwards.
Raw material used in the present invention and reagent are the commercially available prod.
Claims (35)
1. a low etching property photoresist clean-out system comprises dimethyl sulfoxide (DMSO), quaternary ammonium hydroxide, it is characterized in that also comprising the alkyl diol aryl ether or derivatives thereof of general formula for (1):
R
1OC
mH
2mO
nR
2 ( 1)
Wherein, R
1Be aryl, R
2Be H or aryl, m=2～6, n=1～6.
2. low etching property photoresist clean-out system according to claim 1 is characterized in that: described alkyl diol aryl ether or derivatives thereof is glycol monomethyl phenyl ether, propylene glycol list phenyl ether, Isopropanediol list phenyl ether, diethylene glycol list phenyl ether, the single phenyl ether of dipropylene glycol, di-isopropylene glycol list phenyl ether, glycol monomethyl benzylic ether, propylene glycol single-benzyl ether, Isopropanediol single-benzyl ether, hexanediol list naphthyl ether or six condensed ethandiol diphenyl ethers.
3. low etching property photoresist clean-out system according to claim 1 is characterized in that: the content of described alkyl diol aryl ether or derivatives thereof is 0.01～98.99wt%.
4. low etching property photoresist clean-out system according to claim 3 is characterized in that: the content of described alkyl diol aryl ether or derivatives thereof is for being 5.0～40.0wt%.
5. low etching property photoresist clean-out system according to claim 1 is characterized in that: the content of described dimethyl sulfoxide (DMSO) is 1.0～99.98wt%.
6. low etching property photoresist clean-out system according to claim 5 is characterized in that: the content of described dimethyl sulfoxide (DMSO) is 60～95wt%.
7. low etching property photoresist clean-out system according to claim 1 is characterized in that: the content of described quaternary ammonium hydroxide is 0.01～15wt%.
8. low etching property photoresist clean-out system according to claim 7 is characterized in that: the content of described quaternary ammonium hydroxide is 0.5～10.0wt%.
9. low etching property photoresist clean-out system according to claim 1 is characterized in that: described quaternary ammonium hydroxide is Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, TBAH or benzyltrimethylammonium hydroxide.
10. low etching property photoresist clean-out system according to claim 1 is characterized in that: described low etching property photoresist clean-out system also comprises polarity organic cosolvent, corrosion inhibiter, surfactant and/or water.
11. low etching property photoresist clean-out system according to claim 10 is characterized in that: described polarity organic cosolvent content is 0～98.98wt%.
12. low etching property photoresist clean-out system according to claim 11 is characterized in that: described polarity organic cosolvent content is 10～50wt%.
13. low etching property photoresist clean-out system according to claim 10 is characterized in that: described corrosion inhibiter content is 0～15wt%.
14. low etching property photoresist clean-out system according to claim 13 is characterized in that: described corrosion inhibiter content is 0.05～5.0wt%.
15. low etching property photoresist clean-out system according to claim 10 is characterized in that: described surface-active contents is 0～15wt%.
16. low etching property photoresist clean-out system according to claim 15 is characterized in that: described surface-active contents is 0.05～5.0wt%.
17. low etching property photoresist clean-out system according to claim 10 is characterized in that: described liquid water content is 0～95wt%.
18. low etching property photoresist clean-out system according to claim 17 is characterized in that: described liquid water content is 0.5～25wt%.
19. low etching property photoresist clean-out system according to claim 10 is characterized in that: described polarity organic cosolvent is sulfoxide, sulfone, imidazolidinone and/or alkylene glycol monoalkyl ether.
20. low etching property photoresist clean-out system according to claim 19 is characterized in that: described sulfoxide is the diethyl sulfoxide or the first and second basic sulfoxides.
21. low etching property photoresist clean-out system according to claim 19 is characterized in that: described sulfone is methyl sulfone, ethyl sulfone or sulfolane.
22. low etching property photoresist clean-out system according to claim 19 is characterized in that: described imidazolidinone is a 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone or 1,3-diethyl-2-imidazolidinone.
23. low etching property photoresist clean-out system according to claim 19 is characterized in that: described alkylene glycol monoalkyl ether is glycol monoethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, dihydroxypropane single-ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, the single ether of dipropylene glycol or dipropylene glycol monobutyl ether.
24. low etching property photoresist clean-out system according to claim 10 is characterized in that: described surfactant is polyvinyl alcohol (PVA), polyvinylpyrrolidone, polyoxyethylene ether or polysiloxane.
25. low etching property photoresist clean-out system according to claim 10 is characterized in that: described corrosion inhibiter is phenols, carboxylic acid (ester) class, anhydrides or phosphonic acids (ester) class corrosion inhibiter.
26. low etching property photoresist clean-out system according to claim 25 is characterized in that: described phenols is 1,2-dihydroxy phenol, para hydroxybenzene phenol or 1,2,3,-thrihydroxy-benzene.
27. low etching property photoresist clean-out system according to claim 25 is characterized in that: described carboxylic acid (ester) class is benzoic acid, p-aminobenzoic acid, phthalic acid, gallic acid or n-propyl gallate.
28. low etching property photoresist clean-out system according to claim 25 is characterized in that: described anhydrides is acetic anhydride, propionic andydride, caproic anhydride or (gathering) maleic anhydride.
29. low etching property photoresist clean-out system according to claim 25 is characterized in that: described phosphonic acids (ester) class is 1,3-(hydroxyethyl)-2,4,6-tri methylene phosphonic acid, Amino Trimethylene Phosphonic Acid or 2-phosphonic acids butane-1,2,4-tricarboxylic acids.
30. method of cleaning photoresist on the semiconductor wafer with the described low etching property photoresist of claim 1 clean-out system, it is characterized in that: under the room temperature to 85 ℃, the semiconductor wafer that will contain photoresist immerses low etching property photoresist clean-out system and cleans, and dries up afterwards.
31. method according to claim 30 is characterized in that: when cleaning temperature was higher than 45 ℃, wafer was used the washed with isopropyl alcohol wafer again, and then is used washed with de-ionized water after clean-out system cleans.
32. method according to claim 30 is characterized in that: the mode of described low etching property photoresist clean-out system cleaning step is slowly vibration.
33. method according to claim 30 is characterized in that: the time of described low etching property photoresist clean-out system cleaning step is 10～30 minutes.
34. method according to claim 30 is characterized in that: low etching property photoresist clean-out system is used deionized water wash after cleaning again.
35. method according to claim 30 is characterized in that: dry up step and under high pure nitrogen, carry out.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101171385A CN101162369A (en) | 2006-10-13 | 2006-10-13 | Low etching photoresist cleaning agent and cleaning method thereof |
| PCT/CN2007/002935 WO2008046305A1 (en) | 2006-10-13 | 2007-10-12 | A low etched photoresist cleaning agent and cleaning method of using same |
| CNA2007800375301A CN101523300A (en) | 2006-10-13 | 2007-10-12 | A low etched photoresist cleaning agent and cleaning method of using same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101171385A CN101162369A (en) | 2006-10-13 | 2006-10-13 | Low etching photoresist cleaning agent and cleaning method thereof |
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|---|---|
| CN101162369A true CN101162369A (en) | 2008-04-16 |
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| CNA2006101171385A Pending CN101162369A (en) | 2006-10-13 | 2006-10-13 | Low etching photoresist cleaning agent and cleaning method thereof |
| CNA2007800375301A Pending CN101523300A (en) | 2006-10-13 | 2007-10-12 | A low etched photoresist cleaning agent and cleaning method of using same |
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| CNA2007800375301A Pending CN101523300A (en) | 2006-10-13 | 2007-10-12 | A low etched photoresist cleaning agent and cleaning method of using same |
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| WO (1) | WO2008046305A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102200700A (en) * | 2011-06-08 | 2011-09-28 | 绵阳艾萨斯电子材料有限公司 | Stripping liquid as well as preparation method and application |
| CN102449730A (en) * | 2009-05-25 | 2012-05-09 | 康斯坦茨大学 | Method for texturing a surface of a semiconductor substrate and device for carrying out the method |
| CN102043356B (en) * | 2009-10-13 | 2012-09-26 | 奇美实业股份有限公司 | Cleaning solution composition for cleaning substrate |
| CN103809393A (en) * | 2012-11-12 | 2014-05-21 | 安集微电子科技(上海)有限公司 | Cleaning liquid for removing photoresist residues |
| CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
| CN104928680A (en) * | 2014-03-20 | 2015-09-23 | 东友精细化工有限公司 | Texture etching liquid for crystallized silicon wafer and texture etching method |
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| CN102102008B (en) * | 2009-12-18 | 2014-07-23 | 安集微电子（上海）有限公司 | Water-based glass grinding fluid and using method thereof |
| CN118255779A (en) * | 2024-05-30 | 2024-06-28 | 浙江奥首材料科技有限公司 | Isosorbide-based strong-alkalinity quaternary ammonium hydroxide, polysilicon etching solution containing isosorbide-based strong-alkalinity quaternary ammonium hydroxide, preparation method and application of polysilicon etching solution |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10239865A (en) * | 1997-02-24 | 1998-09-11 | Jsr Corp | Stripping solution composition for negative photoresist |
| US5962197A (en) * | 1998-03-27 | 1999-10-05 | Analyze Inc. | Alkaline organic photoresist stripper |
| US6319835B1 (en) * | 2000-02-25 | 2001-11-20 | Shipley Company, L.L.C. | Stripping method |
| US9217929B2 (en) * | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
-
2006
- 2006-10-13 CN CNA2006101171385A patent/CN101162369A/en active Pending
-
2007
- 2007-10-12 WO PCT/CN2007/002935 patent/WO2008046305A1/en active Application Filing
- 2007-10-12 CN CNA2007800375301A patent/CN101523300A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102449730A (en) * | 2009-05-25 | 2012-05-09 | 康斯坦茨大学 | Method for texturing a surface of a semiconductor substrate and device for carrying out the method |
| CN102043356B (en) * | 2009-10-13 | 2012-09-26 | 奇美实业股份有限公司 | Cleaning solution composition for cleaning substrate |
| CN102200700A (en) * | 2011-06-08 | 2011-09-28 | 绵阳艾萨斯电子材料有限公司 | Stripping liquid as well as preparation method and application |
| CN102200700B (en) * | 2011-06-08 | 2012-08-22 | 绵阳艾萨斯电子材料有限公司 | Stripping liquid as well as preparation method and application |
| CN103809393A (en) * | 2012-11-12 | 2014-05-21 | 安集微电子科技(上海)有限公司 | Cleaning liquid for removing photoresist residues |
| CN104928680A (en) * | 2014-03-20 | 2015-09-23 | 东友精细化工有限公司 | Texture etching liquid for crystallized silicon wafer and texture etching method |
| CN104928680B (en) * | 2014-03-20 | 2018-05-04 | 东友精细化工有限公司 | The texture etchant and texture etching method of crystallinity silicon chip |
| CN104450280A (en) * | 2014-11-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Cleaning liquid special for diode semiconductor |
| CN104450280B (en) * | 2014-11-17 | 2017-06-06 | 如皋市大昌电子有限公司 | A kind of diode semiconductor special cleaning |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101523300A (en) | 2009-09-02 |
| WO2008046305A1 (en) | 2008-04-24 |
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Application publication date: 20080416 |