WO2014079145A1 - Solution nettoyante permettant d'éliminer une photorésine - Google Patents

Solution nettoyante permettant d'éliminer une photorésine Download PDF

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Publication number
WO2014079145A1
WO2014079145A1 PCT/CN2013/001375 CN2013001375W WO2014079145A1 WO 2014079145 A1 WO2014079145 A1 WO 2014079145A1 CN 2013001375 W CN2013001375 W CN 2013001375W WO 2014079145 A1 WO2014079145 A1 WO 2014079145A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning solution
cleaning
hydroxide
photoresist
solution according
Prior art date
Application number
PCT/CN2013/001375
Other languages
English (en)
Chinese (zh)
Inventor
孙广胜
刘兵
彭洪修
颜金荔
徐海玉
Original Assignee
安集微电子科技(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子科技(上海)有限公司 filed Critical 安集微电子科技(上海)有限公司
Publication of WO2014079145A1 publication Critical patent/WO2014079145A1/fr

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention concerne une solution nettoyante possédant une faible propriété de gravure adaptée au nettoyage d'une photorésine épaisse, et son procédé de nettoyage. La solution nettoyante pour photorésine possédant une faible propriété de gravure contient de l'hydroxyde d'ammonium quaternaire, une alkylolamine, un polyol C4-C6 et un solvant. La solution nettoyante pour photorésine possédant une faible propriété de gravure peut éliminer efficacement la photorésine d'une tranche semi-conductrice, tout en ne présentant fondamentalement aucun danger pour un substrat tel que les métaux aluminium, cuivre et analogues, ce qui leur permet d'avoir une bonne perspective d'applications dans le domaine du nettoyage des tranches semi-conductrices.
PCT/CN2013/001375 2012-11-22 2013-11-12 Solution nettoyante permettant d'éliminer une photorésine WO2014079145A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210477152.1 2012-11-22
CN201210477152.1A CN103838091A (zh) 2012-11-22 2012-11-22 一种去除光刻胶的清洗液

Publications (1)

Publication Number Publication Date
WO2014079145A1 true WO2014079145A1 (fr) 2014-05-30

Family

ID=50775448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/001375 WO2014079145A1 (fr) 2012-11-22 2013-11-12 Solution nettoyante permettant d'éliminer une photorésine

Country Status (3)

Country Link
CN (1) CN103838091A (fr)
TW (1) TW201420752A (fr)
WO (1) WO2014079145A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105527803B (zh) * 2014-09-29 2020-08-18 安集微电子(上海)有限公司 一种光刻胶清洗液
CN107577121A (zh) * 2017-08-29 2018-01-12 昆山艾森半导体材料有限公司 一种光刻胶去胶液
CN109976111A (zh) * 2017-12-28 2019-07-05 上海飞凯光电材料股份有限公司 一种光刻胶清洗液
CN112226297A (zh) * 2020-11-25 2021-01-15 上海源育节能环保科技有限公司 一种清香环保清洗剂及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440326B1 (en) * 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子(上海)有限公司 低蚀刻性较厚光刻胶清洗液
CN102073226A (zh) * 2009-11-20 2011-05-25 安集微电子(上海)有限公司 一种厚膜光刻胶清洗液及其清洗方法
CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102338994B (zh) * 2010-07-23 2014-12-31 安集微电子(上海)有限公司 一种光刻胶的清洗液
CN102540774A (zh) * 2010-12-21 2012-07-04 安集微电子(上海)有限公司 一种厚膜光刻胶清洗剂

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440326B1 (en) * 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
CN101187788A (zh) * 2006-11-17 2008-05-28 安集微电子(上海)有限公司 低蚀刻性较厚光刻胶清洗液
CN102073226A (zh) * 2009-11-20 2011-05-25 安集微电子(上海)有限公司 一种厚膜光刻胶清洗液及其清洗方法
CN102141743A (zh) * 2010-08-25 2011-08-03 上海飞凯光电材料股份有限公司 具有金属保护的光刻胶剥离液组合物

Also Published As

Publication number Publication date
CN103838091A (zh) 2014-06-04
TW201420752A (zh) 2014-06-01

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