WO2010060274A1 - Détergent pour éliminer la résine photosensible - Google Patents

Détergent pour éliminer la résine photosensible Download PDF

Info

Publication number
WO2010060274A1
WO2010060274A1 PCT/CN2009/001285 CN2009001285W WO2010060274A1 WO 2010060274 A1 WO2010060274 A1 WO 2010060274A1 CN 2009001285 W CN2009001285 W CN 2009001285W WO 2010060274 A1 WO2010060274 A1 WO 2010060274A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
borate
ether
cleaning composition
composition according
Prior art date
Application number
PCT/CN2009/001285
Other languages
English (en)
Chinese (zh)
Inventor
彭洪修
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Priority to CN2009801483637A priority Critical patent/CN102227689A/zh
Publication of WO2010060274A1 publication Critical patent/WO2010060274A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/16—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions using inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2068—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3445—Organic compounds containing sulfur containing sulfino groups, e.g. dimethyl sulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur

Definitions

  • the present invention relates to a cleaning composition in a semiconductor manufacturing process, and in particular to a photoresist cleaning composition.
  • a photoresist coating is first formed on a surface of a metal such as silicon dioxide, Cu (copper), or a low-k material, and exposed and developed using a suitable mask, depending on the photoresist used.
  • the photoresist is removed from the exposed or unexposed portions, a photoresist pattern is formed at a desired portion, and then plasma etching or reactive gas etching is performed on the photoresist pattern to perform pattern transfer.
  • the low temperature and fast cleaning process is an important direction for the development of semiconductor wafer fabrication processes. Negative photoresists with thicknesses above 20 ⁇ are gradually being used in semiconductor wafer fabrication processes.
  • the negative photoresist having a cross-linked network structure after exposure and etching is especially a thick film negative photoresist.
  • cleaning agents In the chemical cleaning of photoresists on semiconductor wafers, cleaning agents often cause corrosion of the wafer pattern and substrate. Especially in the process of removing photoresist and etching residues by chemical cleaning agents, corrosion of metals (especially active metals such as aluminum and copper) is a common and very serious problem, which often leads to a significant decrease in wafer yield. .
  • the photoresist cleaning composition is mainly composed of a strong base, a polar organic solvent, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in a cleaning agent or rinsing the semiconductor wafer with a cleaning agent.
  • Strong bases such as potassium hydroxide, quaternary ammonium hydroxides and alcohol amines, etc., are capable of dissolving the photoresist residues produced by the photoresist and/or etching.
  • a cleaning agent containing potassium hydroxide or a quaternary ammonium hydroxide has a better ability to remove photoresist residues generated by photoresist and/or etching than a cleaning agent composed of an alcohol amine.
  • the cleaning agent containing potassium hydroxide is liable to cause corrosion of the wafer pattern and the substrate, and the removal of the photoresist is mainly performed by peeling, so that the photoresist forms a chip-like peeling or a gel-like swelling, which easily causes light.
  • the deposition or adhesion of the glue on the surface of the wafer even leading to damage to the wafer pattern.
  • the cleaning agent containing quaternary ammonium hydroxide has both stripping and dissolving effects on the photoresist, and does not cause deposition or adhesion of the photoresist on the surface of the wafer.
  • the polar organic solvent is capable of dissolving the photoresist residues generated by the photoresist and/or etching, and improving the cleaning ability of the chemical cleaning agent for organic substances.
  • the cleaning agent has insufficient ability to remove the photoresist residue generated by the photoresist and/or the etching; but when the content of the polar organic solvent is too high, the strong alkali content in the cleaning agent Correspondingly, the ability of the cleaning agent to remove photoresist residues from photoresist and/or etching is reduced.
  • a photoresist cleaning agent composed of an alkanolamine and an organic polar solvent is proposed in US 4,761,251.
  • the semiconductor wafer was immersed in the cleaning agent, and the positive photoresist on the wafer was removed at 95 °C.
  • the cleaning agent does not contain water, and its cleaning ability to the negative photoresist is insufficient.
  • a photoresist cleaning agent composed of an alcohol amine, a water-soluble organic solvent, water, an organic phenol compound, a triazole compound, and a silicone antimony surfactant is proposed in US Pat. No. 6,140,027.
  • the semiconductor wafer is immersed in the cleaning agent, and the photoresist on the wafer and the photoresist residue generated by the etching are removed at 20 to 50 °C.
  • the cleaning agent uses an organic phenol compound and a triazole compound as corrosion inhibitors for inhibiting metal corrosion.
  • the organic phenolic compound is harmful to the human body and pollutes the environment, and the cleaning agent has insufficient cleaning
  • No. 5,962,197 proposes photoresist cleaning consisting of potassium hydroxide, propylene glycol ether, N-methylpyrrolidone, surfactant, 1,3-butanediol, diglycolamine and water in an amount of less than 1% by mass. Agent.
  • the semiconductor wafer is immersed in the cleaning agent, and the photoresist on the wafer is removed at 90 to 110 °C.
  • the cleaning agent contains potassium hydroxide, which has high corrosion to the wafer substrate, and the chip-like peeling or colloidal swelling formed by the stripping photoresist is deposited or adhered on the surface of the wafer, resulting in photoresist. Damage to residual and wafer patterns.
  • a photoresist cleaning agent consisting of tetramethylammonium hydroxide, N-methylmorpholine-N-oxide, water and 2-mercaptobenzimidazole is proposed in WO2004059700.
  • the semiconductor wafer was immersed in the cleaning agent, and the photoresist on the wafer was removed at 70 °C.
  • the cleaning agent needs to clean the photoresist at a relatively high temperature, and the etching of the semiconductor wafer pattern and the substrate is slightly higher, and the cleaning ability of the photoresist is slightly insufficient.
  • a photoresist cleaning agent consisting of quaternary ammonium hydroxide, dimethyl sulfoxide, 1,3,-dimethyl-2-imidazolidinone and water is proposed in US Pat. No. 6,040,117.
  • the semiconductor wafer is immersed in the cleaning agent, and a photoresist having a thickness of ⁇ or more on the metal (gold, copper, lead or nickel) substrate is removed at 40 to 95 °C.
  • the cleaning agent uses 1,3'-dimethyl-2-imidazolium, which is relatively expensive, as an organic co-solvent, and does not contain a corrosion inhibitor that inhibits corrosion of metals such as more active metals such as aluminum.
  • the cleaning agent needs to clean the photoresist at a relatively high temperature, and the etching of the semiconductor wafer pattern and the substrate is slightly higher.
  • a photoresist cleaning agent composed of a quaternary ammonium hydroxide, a water-soluble organic solvent, an organic amine, a glycol, and water is proposed in JP2001215736.
  • the semiconductor wafer is immersed in the cleaning agent, and 20 ⁇ on the wafer is removed at 20 to 90 ° C! ⁇ 40 ⁇ thickness of photoresist.
  • the cleaning agent uses a glycol as a corrosion inhibitor for inhibiting metal corrosion, but the diol has a weak ability to inhibit metal corrosion, and the cleaning ability of the cleaning agent for the photoresist, especially the negative photoresist, is lowered.
  • the cleaning agent has a slightly higher corrosion of the semiconductor wafer pattern and the substrate.
  • a photoresist cleaning agent consisting of quaternary ammonium hydroxide, ⁇ -methylpyrrolidone, diethanolamine or triethanolamine, water and methanol or ethanol is proposed in JP2004093678.
  • the semiconductor wafer is immersed in the cleaning agent, and the photoresist of a thickness of ⁇ or more on the wafer is removed at 15 to 80 °C.
  • the cleaning agent uses methanol or ethanol as a solubilizer for the quaternary ammonium hydroxide, but the flash point of methanol or ethanol is too low, and the cleaning ability of the cleaning agent for the photoresist, especially the negative photoresist, is lowered.
  • the cleaning agent does not contain a corrosion inhibitor that inhibits the corrosion of metals, especially active metals such as aluminum and copper.
  • the cleaning agent has a slightly higher corrosion on the semiconductor wafer pattern and substrate.
  • the existing photoresist cleaning agent has insufficient cleaning ability for a photoresist having a relatively high thickness, or is highly corrosive to a semiconductor wafer pattern and a substrate, and has a large defect.
  • the technical problem to be solved by the present invention is to provide a defect for the thick photoresist cleaning ability of the existing photoresist cleaning agent, the corrosion resistance to the semiconductor wafer pattern and the substrate, and the environmental harmful defects.
  • a photoresist cleaning composition which is strong in cleaning ability of a thick film photoresist and which is less corrosive to semiconductor wafer patterns and substrates and is environmentally friendly.
  • a photoresist cleaning composition comprising quaternary ammonium hydroxide, water, alkyl glycol aryl ether, dimethyl sulfoxide and a corrosion inhibitor;
  • the mercapto glycol aryl ether has a number of carbon atoms of 3 to 18, and the sustained release agent is selected from the group consisting of 3 to 18 carbon atoms.
  • the quaternary ammonium hydroxide is preferably selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and benzyltrimethylhydroxide.
  • One or more of ammonium more preferably one or more selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide and tetrabutylammonium hydroxide, most preferably tetramethylammonium hydroxide .
  • the content thereof is preferably from 0.1 to 10% by weight, more preferably from 1 to 5% by weight.
  • the water content is preferably from 0.2 to 15% by weight, more preferably from 0.5 to 10% by weight.
  • the mercapto glycol aryl ether is preferably selected from the group consisting of propylene glycol monophenyl ether, isopropyl glycol monophenyl ether, diethylene glycol monophenyl ether, dipropylene glycol monophenyl ether, and diisomeric.
  • Propylene glycol monophenyl ether triethylene glycol monophenyl ether, tripropylene glycol monophenyl ether, triisopropyl glycol monophenyl ether, hexadeethylene glycol monophenyl ether, hexapropylene glycol monophenyl ether, hexagonal
  • isopropyl glycol monophenyl ether, propylene glycol monobenzyl ether, isopropyl glycol monobenzyl ether and hexanediol mono-naphthyl ether more preferably selected from propylene glycol monophenyl ether, dipropylene glycol monophenyl group One or more of ether and propylene glycol monobenzyl ether.
  • the content of the mercapto glycol aryl ether is preferably from 0.1 to 65 wt%, more preferably from 0.5 to 20.0 wt%.
  • the mercapto diol aryl ether can improve the solubility of tetramethylammonium hydroxide in dimethyl sulfoxide, and the environmental damage is lower than that of ethylene glycol decyl ether and ethylene glycol aryl ether. More conducive to protecting the environment.
  • the content of the dimethyl sulfoxide is preferably from 1 to 98% by weight, more preferably from 30 to 90% by weight.
  • the boric acid, borate and boric acid ester are preferably selected from the group consisting of boric acid, phenylboronic acid, 2-methylphenylboronic acid, 3-methylphenylboronic acid, 4-methylphenylboronic acid, 2,3.
  • the photoresist cleaning composition may further comprise one selected from the group consisting of a polar organic cosolvent, a surfactant, and a corrosion inhibitor other than boric acid, borate and boric acid ester.
  • a polar organic co-solvent content is preferably 50% by weight, but does not include 0% by weight, more preferably 5 to 30% by weight
  • the surfactant content is preferably 5% by weight, but not including 0% by weight. More preferably, it is 0.05 to 3.0% by weight; the content of the corrosion inhibitor other than the corrosion inhibitor of boric acid, borate and boric acid ester is preferably 5.0% by weight, but does not include 0% by weight, more Preferably, it is 0.05 to 3.0% by weight.
  • the polar organic co-solvent is preferably one or more selected from the group consisting of sulfoxides, sulfones, imidazoles, alcoholamines, and mercaptodiol monodecyl ethers.
  • the sulfoxide is preferably diethyl sulfoxide and/or methyl ethyl sulfoxide; and the sulfone is preferably one or more selected from the group consisting of methyl sulfone, ethyl sulfone and sulfolane.
  • the imidazolium is preferably selected from the group consisting of 2-imidazolium, 1,3-dimethyl-2-imidazolium and 1,3-diethyl-2-imidazolium One or more of them, more preferably 1,3-dimethyl-2-imidazolium;
  • the alcohol amine is preferably selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, isopropanol In amines, methylethanolamine, methyldiethanolamine, dimethylethanolamine and hydroxyethylethylenediamine One or more, more preferably one or more selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, and methylethanolamine;
  • the mercaptodiol monodecyl ether is preferably selected from the group consisting of One or more of ethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol
  • the surfactant is preferably selected from one or more of polyvinyl alcohol, polyvinylpyrrolidone and polyoxyethylene ether, more preferably polyvinylpyrrolidone and/or poly. Oxyethylene ether.
  • the number average molecular weight of the surfactant is preferably from 500 to 20,000, more preferably from 1,000 to 10,000.
  • the corrosion inhibitor other than boric acid, borate and boric acid ester is preferably selected from one of an alcohol amine, an azole, a phosphonic acid and a polyacrylic corrosion inhibitor.
  • the alcohol amine corrosion inhibitor is preferably selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, isopropanolamine, methylethanolamine, methyldiethanolamine, dimethylethanolamine and hydroxyethylethyl
  • the diamines more preferably one or more selected from the group consisting of monoethanolamine, triethanolamine, diglycolamine, and methylethanolamine
  • the azole inhibitor is preferably selected from the group consisting of Benzotriazole, methylbenzotriazole, benzotriazole diethanolamine salt, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, dimercaptothiadiazole , 3-amino-1,2,4-triazo
  • the polyacrylic corrosion inhibitor is preferably selected from the group consisting of acrylic polymers and copolymers thereof, methacrylic polymers and copolymers thereof, alcohol amine salts of acrylic polymers, and methacrylic polymers. More preferably, one or more of an alcohol amine salt, a polyoxyethylene-modified acrylic polymer, an ester thereof and an alkanolammonium salt, and a polyoxyethylene-modified methacrylic acid polymer, and an ester thereof and an alkanolammonium salt.
  • the polyacrylic corrosion inhibitor preferably has a number average molecular weight of from 500 to 100,000, more preferably from 1,000 to 50,000.
  • the polyacrylic corrosion inhibitor exhibits a strong inhibitory effect on corrosion of metals such as aluminum.
  • the reagents and starting materials used in the present invention are commercially available.
  • the photoresist cleaning composition of the present invention can be obtained by simply mixing the components described above.
  • the photoresist cleaner composition of the present invention can be used over a wide temperature range (between 20 and 85).
  • the cleaning method can be referred to the following steps: The semiconductor wafer containing the photoresist is immersed in the cleaning composition, slowly shaken at 20 to 85 ° C with a constant temperature oscillator, then washed with deionized water and then dried with high purity nitrogen.
  • the photoresist cleaning composition of the present invention can relatively quickly clean photoresist and other etching residues having a thickness of 20 ⁇ or more on a substrate such as a metal, a metal alloy or a dielectric.
  • the mercapto diol aryl ether contained in the photoresist cleaning composition of the present invention can improve the solubility of the quaternary ammonium hydroxide in dimethyl sulfoxide.
  • the increase in the solubility of quaternary ammonium hydroxide is beneficial to The cleaning ability of the photoresist cleaning composition of the present invention to a photoresist, especially a thick film photoresist.
  • the protective film prevents the attack of the wafer pattern and the substrate by halogen atoms, hydroxide ions, etc., thereby reducing the corrosion of the wafer pattern and the substrate; in particular, it contains corrosion inhibition selected from the group consisting of boric acid, borate and boric acid ester.
  • the agent exhibits a good inhibitory effect on the corrosion of metals such as aluminum. Therefore, it exhibits extremely weak corrosiveness to metals such as aluminum and copper and non-metal materials such as silica.
  • the photoresist cleaning composition of the present invention can remove a high-crosslinking thick film negative photoresist on a semiconductor wafer by dissolution to prevent deposition or adhesion of the photoresist on the surface of the wafer, and It can cause corrosion or damage to the wafer pattern.
  • the photoresist cleaning composition of the present invention can be used over a wide temperature range (20-85 ° C). Summary of the invention
  • Table 1 shows the formulations of the photoresist cleaning agents of Examples 1 to 26 of the present invention, which were simply mixed uniformly according to the components and their contents listed in Table 1, to prepare each cleaning agent.
  • Ammonium oxide enoic acid (number average molecular weight is 10,000)
  • Methylbenzotriazole 0.5 benzotriazole 0.5 Methyl sulfone 5 monoethanolamine 30 tetrabutyl hydride tripropylene glycol
  • Polyacrylic acid (number average molecular weight is
  • Polyoxyethylene modified polymethyl methacrylate (number average molecular weight is 0.5 75000)
  • Monoethanolamine salt (number average molecular weight is 1 40000) Isopropanolamine 1.5
  • Oleic acid (number average molecular weight is 10000) methylethanolamine 7.5 tetraethylammonium borate 0.3
  • Hinge diisopropyl glycol boronic acid isopropanolamine enoic acid diethanolamine salt (number average molecule 2
  • Monophenyl ether ⁇ Bu amount is 8000) Dimethylethanolamine 2 Boric acid diethylene glycol amine Diethylene glycol monomethyl ether 30
  • Ammonium borate 0.2 (number average molecular weight is 10000)
  • the quantity is 8000
  • Tributyl borate 1 polyoxyethylene modified polymethyl propyl 1.5
  • Oleic acid number average molecular weight 10000
  • Polyoxyethylene ether (number average molecular weight is
  • Polyoxyethylene modified polyacrylic acid monoethanolamine salt (number average molecular weight is 0.5 40000)
  • Table 2 shows comparative cleaning agents ⁇ 7, and the photoresist cleaning composition embodiment of the present invention
  • the formula of 27 ⁇ 42 is simply mixed evenly according to the components listed in Table 2 and their contents, that is, each cleaning agent is prepared.
  • Comparative Example Cleaning Agents 1, -6, and the cleaning agent of the present invention 27-42 are clear and transparent homogeneous solutions.
  • the comparative example cleaning agent ⁇ 6, and the cleaning agent 27 ⁇ 42 of the embodiment of the present invention were used to clean the three blank wafers and the semiconductor wafer containing the photoresist, and the test results are shown in Table 3.
  • Comparative Example Cleaner ⁇ 6' and Inventive Example Cleaner 27 ⁇ 42 were used to clean the blank Cu wafer and measure its corrosion to metallic Cu. Test methods and conditions: 4 4 4 cm blank Cu wafer was immersed in a cleaning agent, oscillated with a constant temperature oscillator at 20 to 85 ° C for 60 minutes, then washed with deionized water and then dried with high purity nitrogen gas. The needle gauge measures the change of the surface resistance of the blank Cu wafer before and after etching. The results are shown in Table 3.
  • Comparative Example Cleaner ⁇ 6' and Inventive Example Cleaner 27 ⁇ 42 were used to clean the blank A1 wafer and determine its corrosion to metal A1.
  • Test methods and conditions The 4 X 4 cm blank A1 wafer was immersed in a cleaning agent, shaken at 20 to 85 ° C for 60 minutes using a constant temperature oscillator, then washed with deionized water and then dried with high purity nitrogen gas, using a quadrupole probe. The needle gauge was used to measure the change in surface resistance of the blank A1 wafer before and after etching. The results are shown in Table 3.
  • the comparative example cleaning agent ⁇ 6' and the cleaning agent 27 ⁇ 42 of the present invention were used to clean the blank tetraethoxysilane (TEOS) wafer, and the corrosion of the non-metallic TEOS was measured.
  • Test methods and conditions A 4 X 4 cm blank TEOS wafer was immersed in a cleaning agent, shaken at 20 to 85 ° C for 60 minutes using a constant temperature oscillator, and then washed with deionized water and then dried with high purity nitrogen.
  • the thickness of the TEOS thickness before and after cleaning of the blank TEOS wafer was calculated using a Nanospec 6100 thickness gauge. The results are shown in Table 3.
  • the comparative example cleaning agents 1, -6, and the cleaning agents 27 to 42 of the present invention are used to clean the photoresist on the semiconductor wafer.
  • the cleaning method is as follows: Immerse the semiconductor wafer (containing pattern) containing a negative acrylate photoresist (having a thickness of about 60 ⁇ m and exposed and etched) into the cleaning agent. The mixture was shaken at 20 to 85 ° C for 1 to 30 minutes using a constant temperature oscillator, and then washed with deionized water and then dried with high purity nitrogen gas. The cleaning effect of the photoresist and the corrosion of the wafer pattern by the cleaning agent are shown in Table 3.
  • Corrosion ⁇ Basically non-corrosive; Cleaning condition: ⁇ Completely removed;
  • a semiconductor wafer (containing a pattern) containing a high degree of crosslinking of a negative acrylate-based photoresist (having a thickness of about 150 ⁇ m and exposed and etched) was immersed in the cleaning agent 32 of the present invention shown in Table 2.
  • Table 2 A semiconductor wafer (containing a pattern) containing a high degree of crosslinking of a negative acrylate-based photoresist (having a thickness of about 150 ⁇ m and exposed and etched) was immersed in the cleaning agent 32 of the present invention shown in Table 2.
  • Table 2 A semiconductor wafer (containing a pattern) containing a high degree of crosslinking of a negative acrylate-based photoresist (having a thickness of about 150 ⁇ m and exposed and etched) was immersed in the cleaning agent 32 of the present invention shown in Table 2.
  • ⁇ 42 it was shaken at 40 to 85 ° C for 10 to 60 minutes using a constant temperature oscillator, and then washed with deionized water and then dried with
  • Corrosion ⁇ Basically non-corrosive; Cleaning condition: ⁇ Completely removed;
  • the cleaning agent 27 ⁇ 42 of the embodiment of the present invention has good cleaning ability for the thick film negative acrylate photoresist, and is used. Warm Wide range of degrees, low corrosivity to metallic Cu and A1 and non-metallic TEOS, no corrosion or damage to the wafer pattern.
  • the photoresist cleaning composition of the present invention can relatively quickly clean photoresist and other etching residues having a thickness of 20 ⁇ m or more on a substrate such as a metal, a metal alloy or a dielectric. It exhibits extremely weak corrosive properties to metals such as aluminum and copper and non-metallic materials such as silicon dioxide, and does not cause corrosion or damage to the wafer pattern, and can be used in a wide temperature range (20 to 85 ° C). use.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

La présente invention concerne un détergent pour éliminer la résine photosensible comportant de l’hydroxyde d’ammonium quaternaire, de l’eau, de l’éther de glycol d’alkyle aryle, dans lequel l’éther de glycol d’alkyle aryle contient 3 à 18 atomes de carbone, du sulfoxyde de méthyle et un inhibiteur de corrosion. Au moins un inhibiteur de corrosion est choisi parmi l’acide borique, l’ester borate et de l’acide borique. Le détergent pour éliminer la résine photosensible comporte également un cosolvant organique polaire, un tensioactif et/ou un autre inhibiteur de corrosion. Le détergent peut nettoyer la résine photosensible et des résidus sur un métal, un alliage de métal ou un substrat diélectrique.
PCT/CN2009/001285 2008-11-28 2009-11-19 Détergent pour éliminer la résine photosensible WO2010060274A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801483637A CN102227689A (zh) 2008-11-28 2009-11-19 一种光刻胶清洗剂组合物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200810203715A CN101750912A (zh) 2008-11-28 2008-11-28 一种光刻胶清洗剂组合物
CN200810203715.1 2008-11-28

Publications (1)

Publication Number Publication Date
WO2010060274A1 true WO2010060274A1 (fr) 2010-06-03

Family

ID=42225211

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2009/001285 WO2010060274A1 (fr) 2008-11-28 2009-11-19 Détergent pour éliminer la résine photosensible

Country Status (2)

Country Link
CN (2) CN101750912A (fr)
WO (1) WO2010060274A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102121111A (zh) * 2010-12-17 2011-07-13 陕西师范大学 古代壁画和文物彩绘上钙化土锈去除方法
EP2892967A4 (fr) * 2012-09-07 2016-02-24 Cabot Microelectronics Corp Composition et procédé de polissage employant une polypyrrolidone
CN109652810A (zh) * 2019-02-28 2019-04-19 苏州纳孚林科金属表面技术有限公司 一种硼硫酸酯除锈剂
CN109680284A (zh) * 2019-02-28 2019-04-26 苏州纳孚林科金属表面技术有限公司 一种还原性硼硫酸酯除锈剂
CN109778212A (zh) * 2019-02-28 2019-05-21 苏州纳孚林科金属表面技术有限公司 一种具有抛光效果的除锈膏
CN113684102A (zh) * 2021-09-23 2021-11-23 深圳新宙邦科技股份有限公司 一种清洗剂及应用

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105807577B (zh) * 2014-12-29 2020-08-18 安集微电子科技（上海）股份有限公司 一种光阻残留物清洗液
CN107168021B (zh) * 2017-07-07 2020-06-02 绵阳艾萨斯电子材料有限公司 一种光刻胶用剥离液及其制备方法和应用
CN111381458B (zh) * 2018-12-27 2024-04-30 安集微电子科技（上海）股份有限公司 一种光刻胶清洗液
CN111381459A (zh) * 2018-12-27 2020-07-07 安集微电子科技（上海）股份有限公司 一种光刻胶清洗液
CN112540515B (zh) * 2020-12-16 2023-11-21 江苏艾森半导体材料股份有限公司 一种光刻胶去胶液及其制备方法和应用
CN116731798A (zh) * 2022-01-17 2023-09-12 嘉庚创新实验室 一种无氟清洗剂、其制备方法及应用
CN115074091A (zh) * 2022-07-08 2022-09-20 陶普斯化学科技(北京)有限公司 一种长效抗酸化高效能载冷剂及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1163910A (zh) * 1996-02-12 1997-11-05 希巴特殊化学控股公司 用于金属的耐磨蚀涂料组合物
US20040144406A1 (en) * 2003-01-16 2004-07-29 Aram Garabedian Dry aerosol carpet cleaning process
WO2007044446A1 (fr) * 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Nettoyant aqueux oxydant servant a supprimer des residus apres une attaque au plasma
WO2008052424A1 (fr) * 2006-10-27 2008-05-08 Anji Microelectronics (Shanghai) Co., Ltd. Composé de nettoyage pour éliminer le photorésist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1163910A (zh) * 1996-02-12 1997-11-05 希巴特殊化学控股公司 用于金属的耐磨蚀涂料组合物
US20040144406A1 (en) * 2003-01-16 2004-07-29 Aram Garabedian Dry aerosol carpet cleaning process
WO2007044446A1 (fr) * 2005-10-05 2007-04-19 Advanced Technology Materials, Inc. Nettoyant aqueux oxydant servant a supprimer des residus apres une attaque au plasma
WO2008052424A1 (fr) * 2006-10-27 2008-05-08 Anji Microelectronics (Shanghai) Co., Ltd. Composé de nettoyage pour éliminer le photorésist

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102121111A (zh) * 2010-12-17 2011-07-13 陕西师范大学 古代壁画和文物彩绘上钙化土锈去除方法
EP2892967A4 (fr) * 2012-09-07 2016-02-24 Cabot Microelectronics Corp Composition et procédé de polissage employant une polypyrrolidone
CN109652810A (zh) * 2019-02-28 2019-04-19 苏州纳孚林科金属表面技术有限公司 一种硼硫酸酯除锈剂
CN109680284A (zh) * 2019-02-28 2019-04-26 苏州纳孚林科金属表面技术有限公司 一种还原性硼硫酸酯除锈剂
CN109778212A (zh) * 2019-02-28 2019-05-21 苏州纳孚林科金属表面技术有限公司 一种具有抛光效果的除锈膏
CN109778212B (zh) * 2019-02-28 2020-09-22 苏州纳孚林科金属表面技术有限公司 一种具有抛光效果的除锈膏
CN113684102A (zh) * 2021-09-23 2021-11-23 深圳新宙邦科技股份有限公司 一种清洗剂及应用

Also Published As

Publication number Publication date
CN101750912A (zh) 2010-06-23
CN102227689A (zh) 2011-10-26

Similar Documents

Publication Publication Date Title
WO2010060274A1 (fr) Détergent pour éliminer la résine photosensible
WO2010060273A1 (fr) Composition de solution de rinçage pour éliminer la résine photosensible
JP4208924B2 (ja) 非水性、非腐食性マイクロエレクトロニクス洗浄組成物
TWI334883B (en) Polymer-stripping composition
WO2009006783A1 (fr) Composition de nettoyage permettant d'enlever le résist
KR100744223B1 (ko) 중합체성 부식 억제제를 함유하는 비수성 비부식성 마이크로전자 세정 조성물
CN101907835B (zh) 一种光刻胶的清洗剂组合物
EP1877870B1 (fr) Decapant photoresistant non aqueux empechant la corrosion galvanique
WO2009021400A1 (fr) Composition de nettoyage pour retirer une réserve
WO2008125003A1 (fr) Composition nettoyante à faible attaque chimique destinée à retirer une couche de réserve
WO2009046637A1 (fr) Composition de nettoyage pour éliminer une photorésine
CN101794088A (zh) 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用
JP2005528660A (ja) 半導体プロセス残留物除去組成物および方法
KR20020012141A (ko) 스트리핑 조성물
KR101584377B1 (ko) 금속 염을 함유하는 스트리퍼 용액을 사용하는 감소된 금속 에칭 속도
WO2009155782A1 (fr) Détergent d’élimination d’une photorésine
CN101750914A (zh) 一种光刻胶清洗剂组合物
ZA200610563B (en) Non-aqueous microelectronic cleaning compositions containing fructose
WO2010037263A1 (fr) Solution de nettoyage éliminant la photorésine
WO2010051689A1 (fr) Solution de rinçage pour éliminer une résine photosensible en couche épaisse
KR101341701B1 (ko) 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법
TW201039074A (en) Organic photoresist stripper composition
TWI387858B (zh) 光阻清洗劑
WO2023140345A1 (fr) Composition de pelage de résine photosensible
CN101842746B (zh) 一种光刻胶清洗剂

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980148363.7

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09828535

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09828535

Country of ref document: EP

Kind code of ref document: A1