TW201426206A - Photo-resist stripper - Google Patents

Photo-resist stripper Download PDF

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TW201426206A
TW201426206A TW102145083A TW102145083A TW201426206A TW 201426206 A TW201426206 A TW 201426206A TW 102145083 A TW102145083 A TW 102145083A TW 102145083 A TW102145083 A TW 102145083A TW 201426206 A TW201426206 A TW 201426206A
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photoresist
concentration
hydroxide
sugar
cleaning agent
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TW102145083A
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Chinese (zh)
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Bing Liu
hong-xiu Peng
guang-sheng Sun
Jin-Li Yan
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Anji Microelectronics Technology Shanghai Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/22Carbohydrates or derivatives thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43Solvents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

The present invention discloses a photo-resist stripper with a low etching property for cleaning thick-film photo-resist patterns. The photo-resist stripper includes (a)quaternary ammonium hydroxide, (b)alkylol amine, (c)sugar and/or sugar alcohol, (d)surfactant, and (e)solvent. The photo-resist stripper can effectively remove the photo-resist on the semiconductor wafer. Meanwhile the photo-resist stripper doesn't attack substrate such as alumina and copper, thereby having a prospect in semiconductor wafer cleaning.

Description

一種光阻去除劑 Photoresist remover

本發明涉及一種光阻去除劑。 The present invention relates to a photoresist removal agent.

在通常的半導體製造工藝中,通過在一些材料的表面上形成光阻的掩膜,曝光後進行圖形轉移,在得到需要的圖形之後,進行下一道工序之前,需要剝去殘留的光阻。在這個過程中要求完全除去不需要的光阻,同時不能腐蝕任何基材。例如,在晶圓微球植入工藝(bumping technology)中,需要光阻形成掩膜,該掩膜在微球成功植入後同樣需要去除,但由於該光阻較厚,完全去除常較為困難。改善去除效果較為常用的方法是採用延長浸泡時間、提高浸泡溫度和採用更富有攻擊性的溶液,但這常會造成晶片基材的腐蝕和微球的腐蝕,從而導致晶片良率的顯著降低。 In a conventional semiconductor manufacturing process, by forming a photoresist mask on the surface of some materials, pattern transfer after exposure, after obtaining the desired pattern, it is necessary to remove the residual photoresist before proceeding to the next process. In this process it is required to completely remove the unwanted photoresist while not corroding any substrate. For example, in the wafer microsphere implantation technology, a photoresist is required to form a mask, which needs to be removed after the microsphere is successfully implanted, but since the photoresist is thick, it is often difficult to completely remove it. . A more common method for improving the removal effect is to extend the soaking time, increase the soaking temperature, and use a more aggressive solution, but this often results in corrosion of the wafer substrate and corrosion of the microspheres, resulting in a significant reduction in wafer yield.

目前,光阻清洗液主要由極性有機溶劑、強鹼和/或水等組成,通過將半導體晶片浸入清洗液中或者利用清洗液沖洗半導體晶片,去除半導體晶片上的光阻。如WO2006/056298A1利用由四甲基氫氧化銨(TMAH)、二甲基亞 碸(DMSO),乙二醇(EG)和水組成鹼性清洗液,用於清洗銅基板的光阻,同時對金屬銅基本無腐蝕,但其對金屬鋁有腐蝕;又例如US5529887由氫氧化鉀(KOH)、烷基二醇單烷基醚、水溶性氟化物和水等組成鹼性清洗液,將晶片浸入該清洗液中,在40~90℃下除去金屬和電介質基材上的厚膜光阻。其對半導體晶片基材的腐蝕較高。隨著半導體的快速發展,特別是凸球封裝領域的發展,對光阻殘留物的清洗要求也相應提高;主要是隨著在單位面積上引腳數(I/O)越來越多,光阻的去除也變得越來越困難。 At present, the photoresist cleaning liquid is mainly composed of a polar organic solvent, a strong alkali, and/or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning liquid or rinsing the semiconductor wafer with the cleaning liquid. For example, WO2006/056298A1 utilizes tetramethylammonium hydroxide (TMAH), dimethyl amide An alkaline cleaning solution consisting of hydrazine (DMSO), ethylene glycol (EG) and water is used to clean the photoresist of the copper substrate while being substantially non-corrosive to metallic copper, but it is corrosive to metallic aluminum; for example, US 5529887 is oxidized by water. An alkaline cleaning solution consisting of potassium (KOH), alkyl glycol monoalkyl ether, water-soluble fluoride and water, immersing the wafer in the cleaning solution, and removing the thickness of the metal and the dielectric substrate at 40 to 90 ° C Membrane photoresist. It has a high corrosion to the semiconductor wafer substrate. With the rapid development of semiconductors, especially in the field of bump ball packaging, the requirements for the cleaning of photoresist residues have also increased accordingly; mainly with the increasing number of pins (I/O) per unit area, light The removal of resistance has also become more and more difficult.

由此可見,尋找更為有效抑制金屬腐蝕抑制方法和高效的光阻去除能力是該類光阻清洗液努力改進的優先方向。 It can be seen that finding a more effective method for suppressing metal corrosion suppression and high efficiency of photoresist removal is a priority for the improvement of such photoresist cleaning liquids.

本發明要解決的技術問題就是針對現有的厚膜光阻清洗液存在的清洗能力不足或者對半導體晶片圖案和基材腐蝕性較強的缺陷,而提供一種對厚膜光阻清洗能力強且對半導體晶片圖案和基材腐蝕性較低的光阻清洗劑。 The technical problem to be solved by the present invention is to provide a thick film photoresist cleaning capability and a countermeasure against the defects of the existing thick film photoresist cleaning liquid which have insufficient cleaning ability or strong corrosion to the semiconductor wafer pattern and the substrate. A semiconductor wafer pattern and a photoresist that is less corrosive to the substrate.

本發明公開的低蝕刻性的適用與較厚光阻清洗的清洗液及其清洗方法。這種低蝕刻性的光阻清洗液含有(a)季銨氫氧化物、(b)醇胺、(c)糖和/或糖醇、(d)表面活性劑以及(e)溶劑。這種低蝕刻性的光阻清洗劑能夠高效的去除半導體晶圓上的光阻,同時對於基材基本沒有攻擊如金屬鋁、銅等,在半導體晶圓清洗等領域具有良好的應用前景。 The invention discloses a low etching property suitable for cleaning with a thick photoresist and a cleaning method thereof. The low-etching photoresist cleaning liquid contains (a) a quaternary ammonium hydroxide, (b) an alcohol amine, (c) a sugar and/or a sugar alcohol, (d) a surfactant, and (e) a solvent. The low-etching photoresist cleaning agent can effectively remove the photoresist on the semiconductor wafer, and has no attack on the substrate, such as metal aluminum, copper, etc., and has a good application prospect in the field of semiconductor wafer cleaning.

在本發明中,所述季銨氫氧化物的濃度為0.1~10wt%,優 選1~5wt%;醇胺的濃度為0.1~30wt%,優選0.1-15wt%;糖和/或糖醇的濃度為0.1~5wt%,優選0.1~3wt%;表面活性劑的濃度為0.01~3wt%,優選0.1~1wt%;餘量為溶劑。 In the present invention, the concentration of the quaternary ammonium hydroxide is 0.1 to 10% by weight, excellent 1~5wt%; the concentration of the alkanolamine is 0.1-30wt%, preferably 0.1-15wt%; the concentration of the sugar and/or sugar alcohol is 0.1~5wt%, preferably 0.1~3wt%; the concentration of the surfactant is 0.01~ 3 wt%, preferably 0.1 to 1 wt%; the balance is a solvent.

在本發明中所述的組分a與組分b的質量比較佳的位於6比1與1比2.5之間。當組分a與組分b的比例大於6:1時,體系有可能不能形成均相溶液或形成均相溶液的時間很長;另一方面,當組分a與組分b的比例小於1:2.5時,過多的醇胺會導致光阻的去除效率下降。 The mass of component a and component b described in the present invention is preferably between 6:1 and 1:2.5. When the ratio of component a to component b is greater than 6:1, the system may not form a homogeneous solution or form a homogeneous solution for a long time; on the other hand, when the ratio of component a to component b is less than 1 At 2.5, too much alcohol amine will cause the removal efficiency of the photoresist to decrease.

本發明中所述的季銨氫氧化物包括四甲基氫氧化銨、四乙基氫氧化銨、四丙基氫氧化銨、四丁基氫氧化銨、甲基三乙基氫氧化銨、羥乙基三甲基氫氧化銨、十六烷基三甲基氫氧化銨和苄基三甲基氫氧化銨中的一種或多種。 The quaternary ammonium hydroxides described in the present invention include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltriethylammonium hydroxide, and hydroxy group. One or more of ethyltrimethylammonium hydroxide, cetyltrimethylammonium hydroxide, and benzyltrimethylammonium hydroxide.

本發明中所述的醇胺為單乙醇胺、二乙醇胺、三乙醇胺、正丙醇胺、異丙醇胺、2-(二乙氨基)乙醇、乙基二乙醇胺和二甘醇胺中的一種或幾種。醇胺的存在有利於提高季銨氫氧化物的溶解度。 The alcohol amine described in the present invention is one of monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol, ethyldiethanolamine and diglycolamine or Several. The presence of an alkanolamine is advantageous for increasing the solubility of the quaternary ammonium hydroxide.

本發明中所述的糖或糖醇為選自蘇阿糖、阿拉伯糖、木糖、核糖、核酮糖、木酮糖、葡萄糖、甘露糖、半乳糖、塔格糖、阿洛糖、阿卓糖、艾杜糖、塔羅糖、山梨糖、阿洛酮糖、果糖、蘇糖醇、赤蘚醇、核糖醇、阿拉伯糖醇、木糖醇、塔羅糖醇、山梨醇、甘露醇、艾杜糖醇和半乳糖醇中的一種或者幾種。 The sugar or sugar alcohol described in the present invention is selected from the group consisting of threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactose, tagatose, allose, a Sugar, idose, talose, sorbose, psicose, fructose, threitol, erythritol, ribitol, arabitol, xylitol, talitol, sorbitol, mannitol One or more of iditol and galactitol.

本發明中所述的表面活性劑選自聚乙烯吡咯烷酮。表面活性劑的加入有利於光阻的去除。 The surfactant described in the present invention is selected from the group consisting of polyvinylpyrrolidone. The addition of a surfactant facilitates the removal of the photoresist.

本發明中所述的溶劑可選自有機溶劑或有機溶劑與水的混合物。所述的有機溶劑較佳的為亞碸、碸、咪唑烷酮、吡咯烷酮、咪唑啉酮、醯胺和醇醚中的一種或多種;所述的亞碸較佳的為二甲基亞碸和甲乙基亞碸中的一種或多種;所述的碸較佳的為甲基碸和環丁碸中的一種或多種;所述的咪唑烷酮較佳的為2-咪唑烷酮和1,3-二甲基-2-咪唑烷酮中的一種或多種;所述的吡咯烷酮較佳的為N-甲基吡咯烷酮、N-環己基吡咯烷酮和N-羥乙基吡咯烷酮中的一種或多種;所述的咪唑啉酮較佳的為1,3-二甲基-2-咪唑啉酮;所述的醯胺較佳的為二甲基甲醯胺和二甲基乙醯胺中的一種或多種;所述的醇醚較佳的為二乙二醇單甲醚、二乙二醇單丁醚和二丙二醇單甲醚中的一種或多種。本發明中所述的溶劑選自有機溶劑與水的混合物時,混合物中水的含量不超過10wt%。 The solvent described in the present invention may be selected from an organic solvent or a mixture of an organic solvent and water. The organic solvent is preferably one or more of an anthracene, an anthracene, an imidazolidinone, a pyrrolidone, an imidazolidinone, a guanamine and an alcohol ether; the amidoxime is preferably a dimethyl hydrazine and One or more of methyl ethyl hydrazine; the hydrazine is preferably one or more of methyl hydrazine and cyclobutyl hydrazine; the imidazolidinone is preferably 2-imidazolidinone and 1,3 Or one or more of dimethyl-2-imidazolidinone; preferably, the pyrrolidone is one or more of N-methylpyrrolidone, N-cyclohexylpyrrolidone and N-hydroxyethylpyrrolidone; The imidazolinone is preferably 1,3-dimethyl-2-imidazolidinone; the guanamine is preferably one or more of dimethylformamide and dimethylacetamide; The alcohol ether is preferably one or more of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether and dipropylene glycol monomethyl ether. When the solvent described in the present invention is selected from a mixture of an organic solvent and water, the content of water in the mixture does not exceed 10% by weight.

本發明中的清洗液,可以在25℃至85℃下清洗晶圓上的光阻殘留物。具體方法如下:將含有光阻殘留物的晶圓浸入本發明中的清洗液中,在25℃至85℃下浸泡合適的時間後,取出漂洗後用高純氮氣吹乾。 In the cleaning liquid of the present invention, the photoresist residue on the wafer can be cleaned at 25 ° C to 85 ° C. The specific method is as follows: the wafer containing the photoresist residue is immersed in the cleaning liquid in the present invention, and after being immersed at 25 ° C to 85 ° C for a suitable period of time, it is taken out and rinsed, and then dried by high-purity nitrogen gas.

本發明的技術效果在於:a)選用合適的季銨氫氧化物/醇胺的比例有利於協調光阻去除能力和金屬微球的防腐蝕;b)糖或糖醇的存在,有利於抑制金屬銅、鋁、錫、鉛、銀的腐蝕;以及c)聚乙烯吡咯烷酮的加入有利於光阻的去除。 The technical effect of the invention is that: a) selecting a suitable ratio of quaternary ammonium hydroxide/alcoholamine is advantageous for coordinating photoresist removal ability and corrosion prevention of metal microspheres; b) presence of sugar or sugar alcohol is beneficial for inhibiting metal Corrosion of copper, aluminum, tin, lead, and silver; and c) the addition of polyvinylpyrrolidone facilitates the removal of photoresist.

本發明所用試劑及原料均市售可得。本發明的清洗液由上述成分簡單均勻混合即可制得。 The reagents and starting materials used in the present invention are commercially available. The cleaning liquid of the present invention can be obtained by simply and uniformly mixing the above components.

下面通過具體實施方式來進一步闡述本發明的優勢。但本發明包括但不限於下述實施例的具體組成。 Advantages of the present invention are further illustrated by the following detailed description. However, the invention includes, but is not limited to, the specific compositions of the following examples.

製備實施例Preparation example

表1給出了本發明的清洗液配方。以下所述百分含量均為質量百分比含量。 Table 1 shows the cleaning solution formulations of the present invention. The percentages described below are all percentage by mass.

為了進一步考察該類清洗液的清洗情況,本發明採用了如下技術手段:即將含有光阻的晶片浸入清洗劑中,在25℃至85℃下利用恒溫振盪器以約60轉/分的振動頻率振盪30~90分鐘,然後經去離子水洗滌後用高純氮氣吹乾。光阻的清洗效果和清洗液對晶片的腐蝕情況如表2所示。 In order to further investigate the cleaning condition of the cleaning liquid, the present invention adopts the following technical means: immersing the wafer containing the photoresist in the cleaning agent, and using a constant temperature oscillator at a vibration frequency of about 60 rpm at 25 ° C to 85 ° C Shake for 30 to 90 minutes, then wash with deionized water and dry with high purity nitrogen. The cleaning effect of the photoresist and the corrosion of the cleaning solution on the wafer are shown in Table 2.

從表2可以看出,本發明的清洗液對光阻具有良好的清洗效果,使用溫度範圍廣。另外實施例5與對比例1的比較可以看出,聚乙烯吡咯烷酮的加入有利於光阻的去除;實施例22與對比例2的比較可以看出,糖或糖醇的存在,有利於抑制金屬鋁的腐蝕。 As can be seen from Table 2, the cleaning liquid of the present invention has a good cleaning effect on the photoresist and has a wide temperature range. In addition, the comparison between Example 5 and Comparative Example 1 shows that the addition of polyvinylpyrrolidone facilitates the removal of the photoresist; the comparison of Example 22 with Comparative Example 2 shows that the presence of sugar or sugar alcohol is beneficial to inhibit the metal. Corrosion of aluminum.

綜上,本發明的清洗液具有光阻去除能力強;對金屬和非金屬的腐蝕抑制能力強;具有較大的操作空間。 In summary, the cleaning liquid of the invention has strong photoresist removal ability; strong corrosion inhibition ability to metal and non-metal; and large operation space.

應當理解的是,本發明所述wt%均指的是質量百分比含量。 It should be understood that the wt% of the present invention refers to the mass percentage content.

以上對本發明的具體實施例進行了詳細描述,但其只是 作為範例,本發明並不限制於以上描述的具體實施例。對於本領域技術人員而言,任何對本發明進行的等同修改和替代也都在本發明的範疇之中。因此,在不脫離本發明的精神和範圍下所作的均等變換和修改,都應涵蓋在本發明的範圍內。 The specific embodiments of the present invention have been described in detail above, but only As an example, the invention is not limited to the specific embodiments described above. Any equivalent modifications and substitutions to the invention are also within the scope of the invention. Accordingly, equivalents and modifications may be made without departing from the spirit and scope of the invention.

Claims (12)

一種光阻去除劑,包含季銨氫氧化物、醇胺、糖和/或糖醇、表面活性劑以及溶劑。 A photoresist remover comprising a quaternary ammonium hydroxide, an alcohol amine, a sugar and/or a sugar alcohol, a surfactant, and a solvent. 如請求項1所述的光阻去除劑,其中所述季銨氫氧化物的濃度為0.1~10wt%,所述醇胺的濃度為0.1~30wt%,所述糖和/或糖醇的濃度為0.1~5wt%,所述表面活性劑的濃度為0.01~3wt%,所述溶劑的含量為餘量。 The photoresist removing agent according to claim 1, wherein the concentration of the quaternary ammonium hydroxide is 0.1 to 10% by weight, the concentration of the alcohol amine is 0.1 to 30% by weight, and the concentration of the sugar and/or sugar alcohol The concentration of the surfactant is from 0.01 to 5% by weight, and the concentration of the solvent is the balance. 如請求項2所述的光阻去除劑,其中所述季銨氫氧化物的濃度為1~5wt%,所述醇胺的濃度為0.1-15wt%,所述糖和/或糖醇的濃度為0.1~3wt%,所述表面活性劑的濃度為0.1~1wt%。 The photoresist remover according to claim 2, wherein the concentration of the quaternary ammonium hydroxide is 1 to 5 wt%, the concentration of the alkanolamine is 0.1 to 15 wt%, and the concentration of the sugar and/or sugar alcohol The concentration of the surfactant is 0.1 to 1% by weight, and the concentration of the surfactant is 0.1 to 1% by weight. 如請求項2或3所述的光阻清洗劑,其中所述季銨氫氧化物與所述醇胺的質量比為6比1與1比2.5之間。 The photoresist cleaning agent according to claim 2, wherein the mass ratio of the quaternary ammonium hydroxide to the alcohol amine is between 6 and 1 and between 1.5 and 2.5. 如請求項1所述的光阻清洗劑,其中所述的季銨氫氧化物選自四甲基氫氧化銨、四乙基氫氧化銨、四丙基氫氧化銨、四丁基氫氧化銨、甲基三乙基氫氧化銨、羥乙基三甲基氫氧化銨、十六烷基三甲基氫氧化銨和苄基三甲基氫氧化銨中的一種或多種。 The photoresist cleaning agent according to claim 1, wherein the quaternary ammonium hydroxide is selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and tetrabutylammonium hydroxide. One or more of methyltriethylammonium hydroxide, hydroxyethyltrimethylammonium hydroxide, cetyltrimethylammonium hydroxide, and benzyltrimethylammonium hydroxide. 如請求項1所述的光阻清洗劑,其中本發明中所述的醇胺選自單乙醇胺、二乙醇胺、三乙醇胺、正丙醇胺、異丙醇胺、2-(二乙氨基)乙醇、乙基二乙醇胺和二甘醇胺中的一種或幾種。 The photoresist cleaning agent according to claim 1, wherein the alcohol amine described in the present invention is selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, n-propanolamine, isopropanolamine, 2-(diethylamino)ethanol. One or more of ethyl diethanolamine and diglycolamine. 如請求項1所述的光阻清洗劑,其中所述的糖和/或 糖醇選自蘇阿糖、阿拉伯糖、木糖、核糖、核酮糖、木酮糖、葡萄糖、甘露糖、半乳糖、塔格糖、阿洛糖、阿卓糖、艾杜糖、塔羅糖、山梨糖、阿洛酮糖、果糖、蘇糖醇、赤蘚醇、核糖醇、阿拉伯糖醇、木糖醇、塔羅糖醇、山梨醇、甘露醇、艾杜糖醇和半乳糖醇中的一種或者幾種。 The photoresist cleaning agent of claim 1, wherein the sugar and/or The sugar alcohol is selected from the group consisting of threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactose, tagatose, allose, altrose, idose, tarot Sugar, sorbose, psicose, fructose, threitol, erythritol, ribitol, arabitol, xylitol, talitol, sorbitol, mannitol, iditol and galactitol One or several. 如請求項1所述的光阻清洗劑,其中所述的表面活性劑為聚乙烯吡咯烷酮。 The photoresist cleaning agent of claim 1, wherein the surfactant is polyvinylpyrrolidone. 如請求項1所述的光阻清洗劑,其中所述的溶劑選自有機溶劑或有機溶劑與水的混合物。 The photoresist cleaning agent of claim 1, wherein the solvent is selected from the group consisting of an organic solvent or a mixture of an organic solvent and water. 如請求項9所述的光阻清洗劑,其中所述的有機溶劑選自亞碸、碸、咪唑烷酮、吡咯烷酮、咪唑啉酮、醯胺和醇醚中的一種或多種。 The photoresist cleaning agent according to claim 9, wherein the organic solvent is one or more selected from the group consisting of an anthraquinone, an anthracene, an imidazolidinone, a pyrrolidone, an imidazolidinone, a guanamine, and an alcohol ether. 如請求項10所述的光阻清洗劑,其中所述的亞碸選自二甲基亞碸和甲乙基亞碸中的一種或多種;所述的碸選自甲基碸和環丁碸中的一種或多種;所述的咪唑烷酮選自2-咪唑烷酮和1,3-二甲基-2-咪唑烷酮中的一種或多種;所述的吡咯烷酮選自N-甲基吡咯烷酮、N-環己基吡咯烷酮和N-羥乙基吡咯烷酮中的一種或多種;所述的咪唑啉酮為1,3-二甲基-2-咪唑啉酮;所述的醯胺選自二甲基甲醯胺和二甲基乙醯胺中的一種或多種;所述的醇醚選自二乙二醇單甲醚、二乙二醇單丁醚和二丙二醇單甲醚中的一種或多種。 The photoresist cleaning agent according to claim 10, wherein the hydrazine is selected from one or more of dimethyl hydrazine and methyl ethyl hydrazine; and the hydrazine is selected from the group consisting of methyl hydrazine and cyclobutyl hydrazine. One or more; the imidazolidinone is selected from one or more of 2-imidazolidinone and 1,3-dimethyl-2-imidazolidinone; the pyrrolidone is selected from N-methylpyrrolidone, One or more of N-cyclohexylpyrrolidone and N-hydroxyethylpyrrolidone; the imidazolinone is 1,3-dimethyl-2-imidazolidinone; the guanamine is selected from the group consisting of dimethyl One or more of guanamine and dimethylacetamide; the alcohol ether is selected from one or more of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether and dipropylene glycol monomethyl ether. 如請求項9所述的光阻清洗劑,其中所述的溶劑選自有機溶劑與水的混合物時,混合物中水的含量不超過10wt%。 The photoresist cleaner according to claim 9, wherein the solvent is selected from the mixture of an organic solvent and water, and the water content of the mixture does not exceed 10% by weight.
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