CN107966887A - A kind of molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen - Google Patents
A kind of molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen Download PDFInfo
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- CN107966887A CN107966887A CN201711188730.9A CN201711188730A CN107966887A CN 107966887 A CN107966887 A CN 107966887A CN 201711188730 A CN201711188730 A CN 201711188730A CN 107966887 A CN107966887 A CN 107966887A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses the molybdenum aluminium photoresist stripper in a kind of transistor liquid crystal touch-screen, include the composition of following percentage by weight：Organic alcohol amine 10%~16%；Triethanolamine solution 12%~20%；O-fluorobenzoic acid 1.2%~2.8%；The dilute base n-butyl ether 5%~15% of second；Ester group quaternary ammonium hydroxide 2.5%~6.9%；Non-protonic solvent 0.2%~0.6%；Remaining is deionized water.Molybdenum aluminium photoresist stripper provided by the invention, it is possible to increase the photoresist stripping performance of tft liquid crystal panel product, reduces process conditions temperature, and avoids the infringement caused by human body and environment caused by the positive photoresist stripper used originally.
Description
Technical field
The present invention relates to the molybdenum aluminium photoresist stripper in a kind of transistor liquid crystal touch-screen.
Background technology
At present, low temperature water system positive photoresist stripper, transparent effumability liquid is inflammable, and density (25 DEG C) is about 1.0g/ml.
The photoresist that molybdenum aluminium photoresist stripper is mainly used for the production of transistor liquid crystal touch panel is peeled off, it is 80 DEG C using technological temperature
Left and right；Positive photoresist stripper is mainly made of monoethanolamine (MEA), dimethyl sulfoxide (DMSO) (DMSO) and ultra-pure water at present, and the product is main
There are some following shortcoming：
1) attack easily is produced to the metal layer that photoresist is protected when carrying out photoresist stripping with the low temperature water system positive photoresist stripper,
Product yield is caused to reduce；
2) the low temperature water system positive photoresist stripper is more demanding using technological temperature, need to be heated to 80 DEG C or so, energy consumption
It is larger；
3) monoethanolamine (MEA) and dimethyl sulfoxide (DMSO) (DMSO) cause serious pollution to the environment and have health compared with major injury.
Molybdenum aluminium photoresist stripper it is therefore desirable to provide a kind of improvement and preparation method thereof, improves transistor liquid crystal and touches
Shield the photoresist stripping performance in manufacturing process, reduce process conditions temperature, and avoid the positive photoresist stripper used originally and make
Into caused by human body and environment infringement.
The content of the invention
The present invention seeks to provide the molybdenum aluminium light in a kind of transistor liquid crystal touch-screen in view of the defects existing in the prior art
Hinder stripper.
The present invention to achieve the above object, adopts the following technical scheme that：A kind of molybdenum aluminium light in transistor liquid crystal touch-screen
Stripper is hindered, includes the composition of following percentage by weight：
Further, the stripper includes the composition of following percentage by weight：
Further, the stripper includes the composition of following percentage by weight：
Further, the stripper includes the composition of following percentage by weight：
Further, the concentration of the organic alcohol amine is 82~89% (percentage by weights)；The triethanolamine solution
Concentration is 85~95% (percentage by weights)；The concentration of the o-fluorobenzoic acid is 90~98% (percentage by weights)；The second
The concentration of dilute base n-butyl ether is 85~95% (percentage by weights)；The concentration of the ester group quaternary ammonium hydroxide is 76~88%
(percentage by weight)；The concentration of the non-protonic solvent is 98.8~99.9% (percentage by weights).
Further, the concentration of the organic alcohol amine is 82% (percentage by weight)；The concentration of the triethanolamine solution
For 85% (percentage by weight)；The concentration of the o-fluorobenzoic acid is 90% (percentage by weight)；The dilute base n-butyl ether of second
Concentration is 85% (percentage by weight)；The concentration of the ester group quaternary ammonium hydroxide is 76% (percentage by weight)；The non-matter
The concentration of sub- property solvent is 98.8% (percentage by weight).
Further, the concentration of the organic alcohol amine is 86% (percentage by weight)；The concentration of the triethanolamine solution
For 90% (percentage by weight)；The concentration of the o-fluorobenzoic acid is 94% (percentage by weight)；The dilute base n-butyl ether of second
Concentration is 90% (percentage by weight)；The concentration of the ester group quaternary ammonium hydroxide is 82% (percentage by weight)；The non-matter
The concentration of sub- property solvent is 99.5% (percentage by weight).
Further, the concentration of the organic alcohol amine is 89% (percentage by weight)；The concentration of the triethanolamine solution
For 95% (percentage by weight)；The concentration of the o-fluorobenzoic acid is 98% (percentage by weight)；The dilute base n-butyl ether of second
Concentration is 95% (percentage by weight)；The concentration of the ester group quaternary ammonium hydroxide is 88% (percentage by weight)；The non-matter
The concentration of sub- property solvent is 99.9% (percentage by weight).
Beneficial effects of the present invention：Molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen provided by the invention, can
The photoresist stripping performance of LCD touch screen products is improved, reduces process conditions temperature, and avoids the positive photoresist stripping used originally
The infringement caused by human body and environment caused by chaotropic.
Embodiment
The invention is further illustrated by the following examples, but is not limited to lifted embodiment.
Embodiment 1, the organic alcohol amine for weighing 10kg, it is appropriate then to be added slowly to be loaded with by automatical feeding system
In the reaction kettle of deionized water, and it is sufficiently stirred, whipping temp is 40 degree, and stirring air pressure is 1.2Mpa, and mixing time is 10 points
Clock, the speed of stirring is 45 revs/min；
Then the triethanolamine solution of 12kg, the o-fluorobenzoic acid of 1.2kg, the dilute base n-butyl ether of the second of 5kg, 2.5kg are weighed
The positive thioether of isopropyl, 0.2kg non-protonic solvent and appropriate deionized water, and be sufficiently stirred, whipping temp is 30 degree, is stirred
It is 2.2Mpa to mix air pressure, and mixing time is 15 minutes, and the speed of stirring is 55 revs/min；
Finally start diaphragm pump, by obtained mixture first pass through 0.2um filter circulations filtering 2 it is small when, then through 0.12 μ
The filter filtering of m, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, up to molybdenum aluminium photoresist stripper.
Wherein, the concentration of the organic alcohol amine is 82% (percentage by weight)；The concentration of the triethanolamine solution is
85% (percentage by weight)；The concentration of the o-fluorobenzoic acid is 90% (percentage by weight)；The dilute base n-butyl ether of second it is dense
Spend for 85% (percentage by weight)；The concentration of the ester group quaternary ammonium hydroxide is 76% (percentage by weight)；It is described non-proton
The concentration of property solvent is 98.8% (percentage by weight).
Embodiment 2, the organic alcohol amine for weighing 13kg, it is appropriate then to be added slowly to be loaded with by automatical feeding system
In the reaction kettle of deionized water, and it is sufficiently stirred, whipping temp is 50 degree, and stirring air pressure is 1.7Mpa, and mixing time is 12 points
Clock, the speed of stirring is 45 revs/min；
Then the triethanolamine solution of 17kg, the o-fluorobenzoic acid of 2.2kg, the dilute base n-butyl ether of the second of 10kg, 4.5kg are weighed
The positive thioether of isopropyl, 0.4kg non-protonic solvent and appropriate deionized water, and be sufficiently stirred, whipping temp is 35 degree, is stirred
It is 2.9Mpa to mix air pressure, and mixing time is 20 minutes, and the speed of stirring is 65 revs/min；
Finally start diaphragm pump, by obtained mixture first pass through 0.2um filter circulations filtering 2.5 it is small when, then pass through
0.12 μm of filter filtering, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, up to molybdenum aluminium photoresist stripper.
Wherein, the concentration of the organic alcohol amine is 86% (percentage by weight)；The concentration of the triethanolamine solution is
90% (percentage by weight)；The concentration of the o-fluorobenzoic acid is 94% (percentage by weight)；The dilute base n-butyl ether of second it is dense
Spend for 90% (percentage by weight)；The concentration of the ester group quaternary ammonium hydroxide is 82% (percentage by weight)；It is described non-proton
The concentration of property solvent is 99.5% (percentage by weight).
Embodiment 3, the organic alcohol amine for weighing 16kg, it is appropriate then to be added slowly to be loaded with by automatical feeding system
In the reaction kettle of deionized water, and it is sufficiently stirred, whipping temp is 60 degree, and stirring air pressure is 2.3Mpa, and mixing time is 15 points
Clock, the speed of stirring is 45 revs/min；
Then the triethanolamine solution of 20kg, the o-fluorobenzoic acid of 2.8kg, the dilute base n-butyl ether of the second of 15kg, 6.9kg are weighed
The positive thioether of isopropyl, 0.6kg non-protonic solvent and appropriate deionized water, and be sufficiently stirred, whipping temp is 40 degree, is stirred
It is 3.3Mpa to mix air pressure, and mixing time is 25 minutes, and the speed of stirring is 75 revs/min；
Finally start diaphragm pump, by obtained mixture first pass through 0.2um filter circulation filter 23s it is small when, then through 0.12 μ
The filter filtering of m, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, up to molybdenum aluminium photoresist stripper.
Wherein, the concentration of the organic alcohol amine is 89% (percentage by weight)；The concentration of the triethanolamine solution is
95% (percentage by weight)；The concentration of the o-fluorobenzoic acid is 98% (percentage by weight)；The dilute base n-butyl ether of second it is dense
Spend for 95% (percentage by weight)；The concentration of the ester group quaternary ammonium hydroxide is 88% (percentage by weight)；It is described non-proton
The concentration of property solvent is 99.9% (percentage by weight).
In conclusion molybdenum aluminium photoresist stripper provided by the invention, on the premise of not changing client's using effect, by with
The change of side, improves the photoresist stripping performance of product, reduces process conditions temperature, and avoids the positive photoresist used originally and peel off
Infringement, this method can be suitably used for mass producing caused by human body and environment caused by liquid.Specific advantage is as follows：1) it is of the invention
Molybdenum aluminium photoresist stripper will not attack metal layer when carrying out photoresist stripping；2) low temperature type aqueous positive photoresist stripper of the invention
Technological temperature condition is 60 DEG C, and less than 80 DEG C original of technological temperature, energy consumption reduces；3) in molybdenum aluminium photoresist stripper of the invention
Component it is small to human health damage and environmental pollution；4) microemulsion technology is used：Using micro-emulsion technology, special addition is added
Agent, product form isotropism and preferable dispersiveness, product is effectively removed light in use after emulsification
Resistance.The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the spirit and principles in the present invention it
Interior, any modification, equivalent replacement, improvement and so on, should all be included in the protection scope of the present invention.
Claims (8)
1. the molybdenum aluminium photoresist stripper in a kind of transistor liquid crystal touch-screen, it is characterised in that including following percentage by weight
Composition：
2. the molybdenum aluminium photoresist stripper in a kind of transistor liquid crystal touch-screen as claimed in claim 1, it is characterised in that including
The composition of following percentage by weight：
3. the molybdenum aluminium photoresist stripper in a kind of transistor liquid crystal touch-screen as claimed in claim 1, it is characterised in that including
The composition of following percentage by weight：
4. the molybdenum aluminium photoresist stripper in a kind of transistor liquid crystal touch-screen as claimed in claim 1, it is characterised in that including
The composition of following percentage by weight：
5. the molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen as claimed in claim 1, it is characterised in that described organic
The concentration of hydramine is 82~89% (percentage by weights)；The concentration of the triethanolamine solution is 85~95% (weight percents
Than)；The concentration of the o-fluorobenzoic acid is 90~98% (percentage by weights)；The concentration of the dilute base n-butyl ether of second for 85~
95% (percentage by weight)；The concentration of the ester group quaternary ammonium hydroxide is 76~88% (percentage by weights)；It is described non-proton
The concentration of property solvent is 98.8~99.9% (percentage by weights).
6. the molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen as claimed in claim 5, it is characterised in that described organic
The concentration of hydramine is 82% (percentage by weight)；The concentration of the triethanolamine solution is 85% (percentage by weight)；The neighbour
The concentration of fluobenzoic acid is 90% (percentage by weight)；The concentration of the dilute base n-butyl ether of second is 85% (percentage by weight)；Institute
The concentration for stating ester group quaternary ammonium hydroxide is 76% (percentage by weight)；The concentration of the non-protonic solvent is 98.8% (weight
Measure percentage).
7. the molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen as claimed in claim 5, it is characterised in that described organic
The concentration of hydramine is 86% (percentage by weight)；The concentration of the triethanolamine solution is 90% (percentage by weight)；The neighbour
The concentration of fluobenzoic acid is 94% (percentage by weight)；The concentration of the dilute base n-butyl ether of second is 90% (percentage by weight)；Institute
The concentration for stating ester group quaternary ammonium hydroxide is 82% (percentage by weight)；The concentration of the non-protonic solvent is 99.5% (weight
Measure percentage).
8. the molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen as claimed in claim 5, it is characterised in that described organic
The concentration of hydramine is 89% (percentage by weight)；The concentration of the triethanolamine solution is 95% (percentage by weight)；The neighbour
The concentration of fluobenzoic acid is 98% (percentage by weight)；The concentration of the dilute base n-butyl ether of second is 95% (percentage by weight)；Institute
The concentration for stating ester group quaternary ammonium hydroxide is 88% (percentage by weight)；The concentration of the non-protonic solvent is 99.9% (weight
Measure percentage).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711188730.9A CN107966887A (en) | 2017-11-24 | 2017-11-24 | A kind of molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711188730.9A CN107966887A (en) | 2017-11-24 | 2017-11-24 | A kind of molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen |
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| Publication Number | Publication Date |
|---|---|
| CN107966887A true CN107966887A (en) | 2018-04-27 |
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ID=62000591
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711188730.9A Pending CN107966887A (en) | 2017-11-24 | 2017-11-24 | A kind of molybdenum aluminium photoresist stripper in transistor liquid crystal touch-screen |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101398638A (en) * | 2007-09-29 | 2009-04-01 | 安集微电子（上海）有限公司 | Detergent for photo resist |
| WO2014094356A1 (en) * | 2012-12-17 | 2014-06-26 | 安集微电子科技(上海)有限公司 | Photoresist remover |
| CN104635439A (en) * | 2013-11-12 | 2015-05-20 | 安集微电子科技(上海)有限公司 | Photoresist stripping liquid and applications thereof |
| CN105388713A (en) * | 2015-12-16 | 2016-03-09 | 无锡吉进环保科技有限公司 | Aluminum film drainage photoresist stripper in thin-film liquid crystal display |
| CN105527804A (en) * | 2016-03-09 | 2016-04-27 | 长沙晟辉新材料有限公司 | Low-temperature aqueous positive photo-resistant stripping liquid |
| CN107168021A (en) * | 2017-07-07 | 2017-09-15 | 绵阳艾萨斯电子材料有限公司 | A kind of photoresist stripper and its preparation method and application |
-
2017
- 2017-11-24 CN CN201711188730.9A patent/CN107966887A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101398638A (en) * | 2007-09-29 | 2009-04-01 | 安集微电子（上海）有限公司 | Detergent for photo resist |
| WO2014094356A1 (en) * | 2012-12-17 | 2014-06-26 | 安集微电子科技(上海)有限公司 | Photoresist remover |
| CN104635439A (en) * | 2013-11-12 | 2015-05-20 | 安集微电子科技(上海)有限公司 | Photoresist stripping liquid and applications thereof |
| CN105388713A (en) * | 2015-12-16 | 2016-03-09 | 无锡吉进环保科技有限公司 | Aluminum film drainage photoresist stripper in thin-film liquid crystal display |
| CN105527804A (en) * | 2016-03-09 | 2016-04-27 | 长沙晟辉新材料有限公司 | Low-temperature aqueous positive photo-resistant stripping liquid |
| CN107168021A (en) * | 2017-07-07 | 2017-09-15 | 绵阳艾萨斯电子材料有限公司 | A kind of photoresist stripper and its preparation method and application |
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