CN107885049A - A kind of preparation method of copper film stripper in liquid crystal display - Google Patents

A kind of preparation method of copper film stripper in liquid crystal display Download PDF

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Publication number
CN107885049A
CN107885049A CN201711188613.2A CN201711188613A CN107885049A CN 107885049 A CN107885049 A CN 107885049A CN 201711188613 A CN201711188613 A CN 201711188613A CN 107885049 A CN107885049 A CN 107885049A
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China
Prior art keywords
percentage
weight
concentration
copper film
stripper
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CN201711188613.2A
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Chinese (zh)
Inventor
陈昊
朱德意
章锋
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Wuxi South China New Energy Electric Technology Development Co Ltd
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Wuxi South China New Energy Electric Technology Development Co Ltd
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Priority to CN201711188613.2A priority Critical patent/CN107885049A/en
Publication of CN107885049A publication Critical patent/CN107885049A/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The invention discloses a kind of preparation method of the copper film stripper in liquid crystal display, wherein, the stripper includes the composition of following percentage by weight:Alkoxy alkanamine 10%~16%;Triethanolamine solution 12%~20%;Low boiling point organic solvent 1.2%~2.8%;The dilute base n-butyl ether 5%~15% of second;Isopropyl Dipropyl sulfide 2.5%~6.9%;Non-protonic solvent 0.2%~0.6%;Remaining is deionized water.Copper film water system photoresistance stripper provided by the invention, it is possible to increase the photoresistance stripping performance of film liquid crystal panel product, reduce process conditions temperature, and avoid the infringement to caused by human body and environment caused by the positive photoresist stripper used originally.

Description

A kind of preparation method of copper film stripper in liquid crystal display
Technical field
The present invention relates to a kind of preparation method of the copper film stripper in liquid crystal display.
Background technology
At present, low temperature water system positive photoresist stripper, transparent effumability liquid is inflammable, and density (25 DEG C) is about 1.0g/ml. The photoresistance that copper film water system photoresistance stripper is mainly used in the production of film liquid crystal display panel is peeled off, and it is 80 using technological temperature DEG C or so;Positive photoresist stripper is mainly made up of monoethanolamine (MEA), dimethyl sulfoxide (DMSO) (DMSO) and ultra-pure water at present, product master Some following shortcoming be present:
1) attack easily is produced to the metal level that photoresistance is protected when carrying out photoresistance stripping with the low temperature water system positive photoresist stripper, Product yield is caused to reduce;
2) the low temperature water system positive photoresist stripper using technological temperature requires higher, need to be heated to 80 DEG C or so, energy consumption compared with Greatly;
3) monoethanolamine (MEA) and dimethyl sulfoxide (DMSO) (DMSO) are big for environment pollution and have health compared with major injury.
Copper film water system photoresistance stripper it is therefore desirable to provide a kind of improvement and preparation method thereof, improve film liquid crystal Show the photoresistance stripping performance in device manufacturing process, reduce process conditions temperature, and avoid the positive photoresist stripper used originally Caused by caused by human body and environment infringement.
The content of the invention
The defects of the present invention seeks to exist for prior art, provides the copper film stripper in a kind of liquid crystal display Preparation method.
The present invention to achieve the above object, adopts the following technical scheme that:A kind of copper film stripper in liquid crystal display Preparation method, comprise the following steps:
Automatical feeding system is first passed through to be added slowly to the alkoxy alkanamine that weight percentage is 10%~16% It is loaded with the reactor of deionized water, and is sufficiently stirred, whipping temp is 40-60 degree, and stirring air pressure is 1.2-2.3Mpa, is stirred The time is mixed as 10~15 minutes, the speed of stirring is 45-65 revs/min;
It is 12%~20% 3 ethanol to next proceed through automatical feeding system and slowly add weight percentage successively The second that low boiling point organic solvent that amine aqueous solution, weight percentage are 1.2%~2.8%, weight percentage are 5%~15% Isopropyl Dipropyl sulfide that dilute base n-butyl ether, weight percentage are 2.5%~6.9%, weight percentage be 0.2%~ 0.6% non-protonic solvent and deionized water, and be sufficiently stirred, whipping temp is 30-40 degree, and stirring air pressure is 2.2- 3.3Mpa, mixing time are 15~25 minutes, and the speed of stirring is 55-75 revs/min;
Membrane pump is finally started, obtained mixture is first passed through into 0.2um filters circulating filtration 2~3 hours, then pass through 0.12 μm of filter filtering, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, produce the stripping of copper film water system photoresistance Chaotropic.
Further, the concentration of the alkoxy alkanamine is 82~89% (percentage by weights);The triethanolamine solution Concentration be 85~95% (percentage by weights);The concentration of the low boiling point organic solvent is 90~98% (percentage by weights); The concentration of the dilute base n-butyl ether of second is 85~95% (percentage by weights);The concentration of the isopropyl Dipropyl sulfide be 76~ 88% (percentage by weight);The concentration of the non-protonic solvent is 98.8~99.9% (percentage by weights).
Further, the concentration of the alkoxy alkanamine is 82% (percentage by weight);The triethanolamine solution it is dense Spend for 85% (percentage by weight);The concentration of the low boiling point organic solvent is 90% (percentage by weight);The dilute base of second is just The concentration of butyl ether is 85% (percentage by weight);The concentration of the isopropyl Dipropyl sulfide is 76% (percentage by weight);It is described The concentration of non-protonic solvent is 98.8% (percentage by weight).
Further, the concentration of the alkoxy alkanamine is 86% (percentage by weight);The triethanolamine solution it is dense Spend for 90% (percentage by weight);The concentration of the low boiling point organic solvent is 94% (percentage by weight);The dilute base of second is just The concentration of butyl ether is 90% (percentage by weight);The concentration of the isopropyl Dipropyl sulfide is 82% (percentage by weight);It is described The concentration of non-protonic solvent is 99.5% (percentage by weight).
Further, the concentration of the alkoxy alkanamine is 89% (percentage by weight);The triethanolamine solution it is dense Spend for 95% (percentage by weight);The concentration of the low boiling point organic solvent is 98% (percentage by weight);The dilute base of second is just The concentration of butyl ether is 95% (percentage by weight);The concentration of the isopropyl Dipropyl sulfide is 88% (percentage by weight);It is described The concentration of non-protonic solvent is 99.9% (percentage by weight).
Beneficial effects of the present invention:The preparation method of copper film water system photoresistance stripper provided by the invention, it is possible to increase liquid The photoresistance stripping performance of crystal face panel products, process conditions temperature is reduced, and avoid the positive photoresist stripper used originally and cause To caused by human body and environment infringement.
Embodiment
The invention is further illustrated by the following examples, but is not limited to lifted embodiment.
Embodiment 1, the alkoxy alkanamine for weighing 10kg, then it is added slowly to be loaded with by automatical feeding system suitable When in the reactor of deionized water, and it is sufficiently stirred, whipping temp is 40 degree, and stirring air pressure is 1.2Mpa, mixing time 10 Minute, the speed of stirring is 45 revs/min;
Then weigh 12kg triethanolamine solution, 1.2kg low boiling point organic solvent, the dilute base n-butyl ether of 5kg second, The 2.5kg positive thioether of isopropyl, 0.2kg non-protonic solvent and appropriate deionized water, and be sufficiently stirred, whipping temp 30 Degree, stirring air pressure are 2.2Mpa, and mixing time is 15 minutes, and the speed of stirring is 55 revs/min;
Membrane pump is finally started, obtained mixture is first passed through into 0.2um filters circulating filtration 2 hours, then through 0.12 μ M filter filtering, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, produces copper film water system photoresistance stripper.
Wherein, the concentration of the alkoxy alkanamine is 82% (percentage by weight);The concentration of the triethanolamine solution is 85% (percentage by weight);The concentration of the low boiling point organic solvent is 90% (percentage by weight);The dilute base n-butyl ether of second Concentration be 85% (percentage by weight);The concentration of the isopropyl Dipropyl sulfide is 76% (percentage by weight);The non-matter The concentration of sub- property solvent is 98.8% (percentage by weight).
Embodiment 2, the alkoxy alkanamine for weighing 13kg, then it is added slowly to be loaded with by automatical feeding system suitable When in the reactor of deionized water, and it is sufficiently stirred, whipping temp is 50 degree, and stirring air pressure is 1.7Mpa, mixing time 12 Minute, the speed of stirring is 45 revs/min;
Then weigh 17kg triethanolamine solution, 2.2kg low boiling point organic solvent, the dilute base n-butyl ether of 10kg second, The 4.5kg positive thioether of isopropyl, 0.4kg non-protonic solvent and appropriate deionized water, and be sufficiently stirred, whipping temp 35 Degree, stirring air pressure are 2.9Mpa, and mixing time is 20 minutes, and the speed of stirring is 65 revs/min;
Membrane pump is finally started, obtained mixture is first passed through into 0.2um filters circulating filtration 2.5 hours, then pass through 0.12 μm of filter filtering, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, produce the stripping of copper film water system photoresistance Chaotropic.
Wherein, the concentration of the alkoxy alkanamine is 86% (percentage by weight);The concentration of the triethanolamine solution is 90% (percentage by weight);The concentration of the low boiling point organic solvent is 94% (percentage by weight);The dilute base n-butyl ether of second Concentration be 90% (percentage by weight);The concentration of the isopropyl Dipropyl sulfide is 82% (percentage by weight);The non-matter The concentration of sub- property solvent is 99.5% (percentage by weight).
Embodiment 3, the alkoxy alkanamine for weighing 16kg, then it is added slowly to be loaded with by automatical feeding system suitable When in the reactor of deionized water, and it is sufficiently stirred, whipping temp is 60 degree, and stirring air pressure is 2.3Mpa, mixing time 15 Minute, the speed of stirring is 45 revs/min;
Then weigh 20kg triethanolamine solution, 2.8kg low boiling point organic solvent, the dilute base n-butyl ether of 15kg second, The 6.9kg positive thioether of isopropyl, 0.6kg non-protonic solvent and appropriate deionized water, and be sufficiently stirred, whipping temp 40 Degree, stirring air pressure are 3.3Mpa, and mixing time is 25 minutes, and the speed of stirring is 75 revs/min;
Membrane pump is finally started, obtained mixture is first passed through into 0.2um filters circulating filtration 3 hours, then through 0.12 μ M filter filtering, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, produces copper film water system photoresistance stripper.
Wherein, the concentration of the alkoxy alkanamine is 89% (percentage by weight);The concentration of the triethanolamine solution is 95% (percentage by weight);The concentration of the low boiling point organic solvent is 98% (percentage by weight);The dilute base n-butyl ether of second Concentration be 95% (percentage by weight);The concentration of the isopropyl Dipropyl sulfide is 88% (percentage by weight);The non-matter The concentration of sub- property solvent is 99.9% (percentage by weight).
In summary, the preparation method of copper film water system photoresistance stripper provided by the invention, does not change client's using effect On the premise of, by the change of formula, the photoresistance stripping performance of product is improved, reduces process conditions temperature, and avoid original Come infringement, this method can be suitably used for mass producing to caused by human body and environment caused by the positive photoresist stripper that uses.Specifically Advantage is as follows:1) copper film water system photoresistance stripper of the invention will not attack metal level when carrying out photoresistance stripping;2) it is of the invention Low temperature type aqueous positive photoresist stripper technological temperature condition be 60 DEG C, less than 80 DEG C original of technological temperature, energy consumption reduces;3) originally Component in the copper film water system photoresistance stripper of invention is small to human health damage and environmental pollution;4) microemulsion technology is used:Adopt With micro-emulsion technology, special additive is added, product forms isotropism and preferably dispersiveness, product is existed after emulsification Photoresistance can be effectively removed during use.Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, Within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc., it should be included in the present invention's Within protection domain.

Claims (5)

1. the preparation method of the copper film stripper in a kind of liquid crystal display, it is characterised in that comprise the following steps:
Automatical feeding system is first passed through to be added slowly to contain by the alkoxy alkanamine that weight percentage is 10%~16% Have in the reactor of deionized water, and be sufficiently stirred, whipping temp is 40-60 degree, and stirring air pressure is 1.2-2.3Mpa, during stirring Between be 10~15 minutes, the speed of stirring is 45-65 revs/min;
It is that 12%~20% triethanolamine is molten to next proceed through automatical feeding system and slowly add weight percentage successively The dilute base of second that low boiling point organic solvent that liquid, weight percentage are 1.2%~2.8%, weight percentage are 5%~15% Isopropyl Dipropyl sulfide that n-butyl ether, weight percentage are 2.5%~6.9%, weight percentage are 0.2%~0.6% Non-protonic solvent and deionized water, and be sufficiently stirred, whipping temp is 30-40 degree, and stirring air pressure is 2.2-3.3Mpa, is stirred The time is mixed as 15~25 minutes, the speed of stirring is 55-75 revs/min;
Membrane pump is finally started, obtained mixture is first passed through into 0.2um filters circulating filtration 2~3 hours, then through 0.12 μm Filter filtering, to remove the unwanted particles that particle diameter in mixture is more than 0.12 μm, produce copper film water system photoresistance stripper.
2. the preparation method of the copper film stripper in liquid crystal display as claimed in claim 1, it is characterised in that the alcoxyl The concentration of base alkanamine is 82~89% (percentage by weights);The concentration of the triethanolamine solution is 85~95% (weight percents Than);The concentration of the low boiling point organic solvent is 90~98% (percentage by weights);The concentration of the dilute base n-butyl ether of second is 85 ~95% (percentage by weight);The concentration of the isopropyl Dipropyl sulfide is 76~88% (percentage by weights);It is described non-proton The concentration of property solvent is 98.8~99.9% (percentage by weights).
3. the preparation method of the copper film stripper in liquid crystal display as claimed in claim 2, it is characterised in that the alcoxyl The concentration of base alkanamine is 82% (percentage by weight);The concentration of the triethanolamine solution is 85% (percentage by weight);It is described The concentration of low boiling point organic solvent is 90% (percentage by weight);The concentration of the dilute base n-butyl ether of second is 85% (weight percent Than);The concentration of the isopropyl Dipropyl sulfide is 76% (percentage by weight);The concentration of the non-protonic solvent is 98.8% (percentage by weight).
4. the preparation method of the copper film stripper in liquid crystal display as claimed in claim 2, it is characterised in that the alcoxyl The concentration of base alkanamine is 86% (percentage by weight);The concentration of the triethanolamine solution is 90% (percentage by weight);It is described The concentration of low boiling point organic solvent is 94% (percentage by weight);The concentration of the dilute base n-butyl ether of second is 90% (weight percent Than);The concentration of the isopropyl Dipropyl sulfide is 82% (percentage by weight);The concentration of the non-protonic solvent is 99.5% (percentage by weight).
5. the preparation method of the copper film stripper in liquid crystal display as claimed in claim 2, it is characterised in that the alcoxyl The concentration of base alkanamine is 89% (percentage by weight);The concentration of the triethanolamine solution is 95% (percentage by weight);It is described The concentration of low boiling point organic solvent is 98% (percentage by weight);The concentration of the dilute base n-butyl ether of second is 95% (weight percent Than);The concentration of the isopropyl Dipropyl sulfide is 88% (percentage by weight);The concentration of the non-protonic solvent is 99.9% (percentage by weight).
CN201711188613.2A 2017-11-24 2017-11-24 A kind of preparation method of copper film stripper in liquid crystal display Pending CN107885049A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104932211A (en) * 2015-06-02 2015-09-23 江阴江化微电子材料股份有限公司 Aluminum film water system photoresistance stripping liquid in liquid crystal panel manufacture technology and preparation method thereof
CN105388713A (en) * 2015-12-16 2016-03-09 无锡吉进环保科技有限公司 Aluminum film drainage photoresist stripper in thin-film liquid crystal display
CN105573070A (en) * 2015-12-16 2016-05-11 无锡吉进环保科技有限公司 Preparation method of aluminum film water-based light-resistant stripping liquid in thin film liquid crystal display
CN107357142A (en) * 2017-07-03 2017-11-17 杭州格林达化学有限公司 A kind of water system photoresist stripper and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104932211A (en) * 2015-06-02 2015-09-23 江阴江化微电子材料股份有限公司 Aluminum film water system photoresistance stripping liquid in liquid crystal panel manufacture technology and preparation method thereof
CN105388713A (en) * 2015-12-16 2016-03-09 无锡吉进环保科技有限公司 Aluminum film drainage photoresist stripper in thin-film liquid crystal display
CN105573070A (en) * 2015-12-16 2016-05-11 无锡吉进环保科技有限公司 Preparation method of aluminum film water-based light-resistant stripping liquid in thin film liquid crystal display
CN107357142A (en) * 2017-07-03 2017-11-17 杭州格林达化学有限公司 A kind of water system photoresist stripper and preparation method thereof

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Application publication date: 20180406