WO2007046655A1 - Stripper composition for removing dry etching residue and stripping method - Google Patents

Abstract

The present invention provides a stripper composition and a stripping method using the same, for stripping a resist film on the substrate for a semiconductor or FPD. More specifically, present invention provides a stripper composition and a stripping method using the same, for stripping photoresist film remaining after forming a pattern, and the polymeric etching residue modified after dry etching.

Description

Description

STRIPPER COMPOSITION FOR REMOVING DRY ETCHING RESIDUE AND STRIPPING METHOD

Technical Field

[1] The present invention relates to a stripper composition and a stripping method using the same, for stripping a resist film and a dry etching residue on a substrate for a semiconductor or Flat Panel Display (hereinafter referred to as "FPD"). This application claims priority benefits from Korean Patent Application No. 10-2005-0099570, filed on October 21, 2005, the entire contents of which are fully incorporated herein by reference. Background Art

[2] A lithography technique using resist has been employed in the processes for preparing a semiconductor device or FPD. Specifically, the process comprises the steps of forming a film on a substrate, preparing a resist pattern by an exposure technique, and then etching the lower substrate with a mask to form a wire or device. Particularly, in the preparation of a semiconductor device, it is general to form a wire or device by dry etching employing a particular gas for the purpose of forming a finer structure. Further, it is also general that the resist is removed by a stripper after forming a wire or device. For example, JP-A No. 9-319098 discloses that a substrate is immersed in a stripper composition comprising ammonium hydroxide, alkanol amines, sugar alcohols, a chelating agent and an organic solvent at 7O⁰C for 10 minutes for removal of the resist.

[3] On the other hand, in the preparation of FPD, it is hitherto predominant to form a wire, for example, by wet etching employing chemicals, but in this field, to meet the trend of finer wires, and lower costs, a dry etching process has been introduced.

[4] In the stripping of the resist by dry etching, the subjects to be removed include not only the resist, but also the modified etching residue which had been generated by dry etching. The above-described residues cannot be removed by a conventional stripper in the wet etching processes.

[5] Moreover, a substrate for FPD is, in most cases, large in size, as compared with a substrate for a semiconductor device, such as, for example, a liquid crystal display glass substrate, and thus in the stripping process after etching, the substrate is required to be subjected to the stripping treatment within a short period of time such as 1 to 3 minutes by a spray process, etc., rather than a treatment process such as dipping. For this reason, if the stripper for a semiconductor device, as described in JP-A No. 9-319098, is used as it is, there are caused such the problems that the resist or the dry etching residue is insufficiently stripped, and the stripping performance is not uniform, such that some of the resist on the wide substrate cannot be removed. Further, after the stripping treatment, water rinsing is carried out to remove the stripping solution adhered onto the substrate. However, in this case, the residual components of the stripping solution may cause corrosion of the wire on the substrate. Accordingly, there is a desire of a high-performance stripper used for a FPD substrate after etching. Disclosure of Invention Technical Problem

[6] It is an object of the present invention to provide a resist stripper composition, which can uniformly strip a resist and the dry etching residue on a wide and large substrate in a short period of time, and which does not generates metal wire corrosion. Technical Solution

[7] In order to solve the above-described problems, the present invention provides a resist stripper composition comprised of (A) urea compounds, (B) an alkanol amine or hydroxide, (C) a metal corrosion inhibitor, (D) an organic solvent, and (E) water.

Advantageous Effects

[8] The resist stripper composition of the present invention can uniformly remove a resist and a dry etching residue in a short period of time after the dry etching process in the FPD preparation, and has an effect of not generating metal wire corrosion in the water rinsing after the stripping process. Best Mode for Carrying Out the Invention

[9] The resist stripper composition can uniformly strip a resist and a dry etching residue on a wide and large substrate in a short period of time, and does not cause corrosion or damage of the metal film on the substrate.

[10] As the urea compounds as the component (A) used in the present invention, monomer compounds such as, for example, urea, urea acetate, urea phosphate, thiourea, peroxyurea, hydroxy lurea, N-methylurea, 1,1-dimethylurea, 1,3-dimethylurea, N,N-dimethylurea, tetramethylurea, ethylurea, 1,3-diethylurea, phenylurea, 1,3-diphenylurea, allylurea, ethyleneurea, and cyclohexylurea are preferred, and among these, urea, urea acetate, urea phosphate, thiourea, peroxyurea, hydroxylurea, and the like are more preferred, and urea, and thiourea are even more preferred.

[11] The urea compounds can be used alone or in combination with others in the stripper. The concentration of the urea compounds in the stripper is preferably 0.01 to 15% by weight, more preferably 0.1 to 10% by weight, and even more preferably 0.1 to 5% by weight. If the concentration of the urea compounds is less than 0.01% by weight, the performance as the resist stripper, particularly the stripping ability of the dry etching residue is lowered, whereas if the concentration of the urea compounds is more than 15% by weight, the solubility in the stripper may be deteriorated depending on the kinds of the compounds used, or the residue may be generated on the substrate after the stripping treatment.

[12] The concentration as used herein refers to a concentration of the compounds alone if the urea compounds are singly used, or a sum of the concentrations of the compounds if a plurality of the urea compounds is used in combination.

[13] Examples of the hydroxides as the component (B) used in the present invention include inorganic hydroxides, and organic hydroxides. Examples of the inorganic hydroxides specifically include ammonium hydroxide, potassium hydroxide, and sodium hydroxide, and examples of the organic hydroxides specifically include tetram- ethylammonium hydroxide, and choline.

[14] Further, examples of the alkanol amines as the component (B) include mo- noethanolamine, diethanolamine, 2-(ethylamino)ethanol, 2-(methylamino)ethanol, N- methyldiethanolamine, dimethylaminoethanol, diethylaminoethanol, nitrilotriethanol, 2-(2-aminoethoxy)ethanol, l-amino-2-propanol, triethanolamine, monopropanolamine, and dibutanolamine.

[15] Among these hydroxides or alkanol amines, preferred are tetramethylammonium hydroxide which is an organic hydroxide, choline, 2-(ethylamino)ethanol which is an alkanol amine, and 2-(methylamino)ethanol, l-amino-2-propanol, and among them, l-amino-2-propanol is more preferred.

[16] The hydroxides or alkanol amines are contained in an amount of usually 10 to 60% by weight, preferably 10 to 50% by weight, and more preferably 10 to 40.0% by weight in the stripper of the present invention. If the hydroxides or alkanol amines are contained in an amount of less than 10% by weight in the stripper of the present invention, the resist stripping performance tends to be lowered, whereas if the hydroxides or alkanol amines are contained in an amount of more than 60% by weight, the solubility of other components may be lowered, and the preparation may be difficult.

[17] As the metal corrosion inhibitor of the component (C) used in the present invention, sugars or organic compounds containing at least one of at least nitrogen, oxygen, phosphor and sulfur in the molecule are preferable.

[18] If the metal corrosion inhibitor as the component (C) is an organic compound containing at least one of at least nitrogen, oxygen, phosphor and sulfur in the molecule, the organic compound includes, for example, a compound containing at least one mercapto group in the molecule, a compound containing at least one azole in the molecule, a benzene derivative compound containing at least two hydroxyl groups in the molecule, a compound containing at least one hydroxyl group and carboxylic acid in the molecule, and a compound containing at least one mercapto group in the molecule, which is an aliphatic, alcoholic compound having at least two carbon atoms, and having a bond between carbon bonded with a mercapto group and adjacent carbon bonded with the hydroxyl group.

[19] Specifically, examples of the compound containing at least one mercapto group in the molecule include thioacetic acid, thiobenzoic acid, thioglycol, thioglycerol, and cystein; examples of the compound containing at least one azole in the molecule include benzotriazole, tolyltriazole, 4-methylimidazole, 1-hydroxybenzotriazole, 5-hydroxymethyl-4-methylimidazole, and 3-aminotriazole; examples of the benzene derivative compound containing at least two hydroxyl groups include catechol, resorcinol, and hydroquinone, pyrogallol; examples of the compound containing at least one hydroxyl group and carboxylic acid include gallic acid and tannic acid; and examples of the compound containing at least one mercapto group in the molecule, which is an aliphatic, alcoholic compound having at least two carbon atoms, and having a bond between carbon bonded with a mercapto group and adjacent carbon bonded with the hydroxyl group include thioglycol, and thioglycerol.

[20] Sugars useful for the metal corrosion inhibitor as the component (C) in the present invention include, for example, monosaccharides such as aldose and ketose, and sugar alcohols.

[21] Specifically, examples of the aldose include glyceraldehyde, threose, erythrose, arabinose, xylose, ribose, altose, glucose, mannose, and galactose, and examples of the ketose include erythrose, xylose, tagatose, and fructose. Further, examples of the sugar alcohols include adonitol, arabitol, xylitol, sorbitol, mannitol, and iditol.

[22] At least two kinds of these metal corrosion inhibitors may be contained in the stripper of the present invention.

[23] Among the metal corrosion inhibitors, the benzene derivative compounds containing at least two hydroxyl groups in the molecule such as catechol, resorcinol, hydroquinone, pyrogallol, and sugar alcohols are preferred, and among them, catechol and sorbitol are more preferred.

[24] The metal corrosion inhibitor is contained in an amount of usually 0.01 to 20% by weight, preferably 0.1 to 15% by weight, and more preferably 0.1 to 10% by weight in the stripper of the present invention. If the metal corrosion inhibitor is contained in an amount of less than 0.01% by weight in the stripper of the present invention, it is difficult to exhibit the metal corrosion inhibitory effect, whereas if the metal corrosion inhibitor is contained in an amount of more than 20% by weight, the solubility in the stripper may be deteriorated, or the residue may be generated on the FPD substrate after the stripping treatment.

[25] As the organic solvent as the component (D) used in the present invention, the compounds having a solubility parameter δ in the range of 8 to 16 are preferred.

[26] The solubility parameter δ of the compound is described in, for example, the handbook of Hansen Solubility Parameters (Charles M. Hansen, CRC Press, 2000), or the like. Specific examples of the compound include an alkylene glycol monoalkyl ether, an ester derivative of alkylene glycol monoalkyl ether, a pyrrolidone compound, an imidazolidinone compound, an γ-butyrolactone, and dimethylsulfoxide. To be more specific, examples of the compound include ethyleneglycol monomethyl ether, ethyleneglycol monoethyl ether, ethyleneglycol monoisopropyl ether, ethyleneglycol monobutyl ether, diethyleneglycol monomethyl ether, diethyleneglycol monoethyl ether, diethyleneglycol monoisopropyl ether, diethyleneglycol monobutyl ether, dipropyleneglycol monomethyl ether, 3-methoxy-3-methyl butanol, propylene glycol monobutyl ether, dipropyleneglycol monopropyl ether, ethyleneglycol phenyl ether, propylene glycol monomethyl ether acetate, N-methyl pyrrolidone, N-ethyl pyrrolidone, l,3-dimethyl-2-imidazolidinone, l,3-dipropyl-2-imidazolidinone, γ- butyrolactone, dimethylsulfoxide, and sulfolane.

[27] Among them, the solubility parameter δ is preferably in the range of 9 to 12, and specific examples thereof include ethyleneglycol monobutyl ether, diethyleneglycol monobutyl ether, N-methyl pyrrolidone, γ-butyrolactone, dimethylsulfoxide, and sulfolane. These organic solvents may be used alone or in mixture of at least two kinds thereof.

[28] If the organic solvent having a solubility parameter δ of less than 8 is used, there may be a problem in the affinity with other components, thus not obtaining a uniform compositional solution, whereas if the organic solvent having a solubility parameter δ of more than 16, the resist stripping performance may be lowered.

[29] Further, the concentration of the organic solvent having a solubility parameter δ in the range of 8 to 16 in the entire stripper is preferably 20 to 90% by weight, more preferably 30 to 80% by weight, and even more preferably 40 to 70% by weight.

[30] If the concentration of the organic solvent is less than 20% by weight, the resist stripping performance may be deteriorated, whereas if the concentration of the organic solvent is more than 90% by weight, the performance of removing the dry etching residue may be lowered.

[31] In the present invention, a residual amount of deionized water is used.

[32] In the present invention, a surfactant may be additionally used, if desired. As the surfactant, an anionic surfactant, a cationic surfactant, or a nonionic surfactant can be used, and among them, a nonionic surfactant is preferred.

[33] Examples of the nonionic surfactant include a polyoxyethylene alkylether-type surfactant, a polyoxyethylene alkyl phenylether-type surfactant, a polyoxyethylene polyoxypropylene alkyl ethyl-type surfactant, a polyoxyethylene polyoxybutylene alkyl ethyl-type surfactant, a polyoxyethylene alkyl aminoether-type surfactant, a poly- oxyethylene alkylamide ether-type surfactant, a polyethylene glycol fatty acid ester- type surfactant, a sorbitan fatty acid ester-type surfactant, a glycerin fatty acid ester- type surfactant, an alkylolamide-type surfactant, and a glycerin ester-type surfactant, and among them, a polyoxyethylene polyoxypropylene alkylether-type nonionic surfactant, or a polyoxyethylene polyoxybutylene alkylether-type nonionic surfactant, represented by the following formula (I), (II), (III), (IV) is preferred.

[34] HO-((EO)x-(PO)y)z-H (I)

[35] HO-((EO)x-(BO)y)z-H (II)

[36] R-[((EO)a-(PO)b)c-H]m (III)

[37] R-[((EO)a-(BO)b)c-H]m (IV)

[38] wherein EO represents an oxyethylene group, PO represents an oxypropylene group, and BO represents an oxybutylene group, x and y each represent integers satisfying the conditions of x/(x+y) being 0.05 to 0.5, and a and b each represent integers satisfying the conditions of a/(a+b) being 0.05 to 0.5. z and c represent integers. R represents a monovalent group represented by:

[39]

[40]

[41] a divalent group represented by:

[42]

-O- -R l- -O- (4)

EtN- -Rl- (5)

— rHN iX-i KJ -— — /^

_HN Ri NH — (7)

[43]

[44] a trivalent group represented by:

[45] i>n

-Rϊ~

[46]

[47] or a tetravalent group represented by:

[48]

[49] Rl represents a hydrocarbon group having 1 to 20 carbon atoms substituted with a hydroxyl group and/or an alkyl group, and m represents an integer of 1 or more and 4 or less, corresponding to R.

[50] In the formulae (I) to (IV), the oxy ethylene group represents a -CH -CH -O- , the oxypropylene group represents a -CH(CH )-CH -O- or -CH -CH(CH )-O-, the oxybutylene group represents a -CH₂-CH₂-CH₂-CH₂-O-, -CH(CH₃)-CH₂-CH₂-O-, -CH₂ -CH(CH 3 )-CH 2 -O-, or -CH 2 -CH 2 -CH(CH 3 ) 2 -O-.

[51] In the formulae (I) to (IV), x and y, a and b each represent integers satisfying the conditions of x/(x+y) and a/(a+b) being both 0.05 to 0.7, and z and c represent integers.

[52] If each of the values of x/(x+y) and a/(a+b) is less than 0.05, the solubility in the preparation of the stripping solution is insufficient, whereas if each of the values of x/ (x+y) and a/(a+b) is more than 0.7, the foam stripping ability of the solution is insufficient.

[53] At least two kinds of the compounds having the different values of x/(x+y) and a/

(a+b) may be contained in the stripping solution of the present invention.

[54] Herein, the polymerized moieties of the oxy ethylene group, the oxy propylene group, and the oxybutylene group, each represented by ((EO)x-(PO)y)z, ((EO)a-(PO)b)c, ((EO)x-(BO)y)z, ((EO)a-(BO)b)c in the formulae (I) to (IV) may be a block multipolymer, a random multipolymer, or a block and random multipolymer.

[55] R is represented by a mono-, di-, tri- or tetra-valent group, and Rl represents a hydrocarbon group having 1 to 20 carbon atoms substituted with a hydroxyl group and/or an alkyl group.

[56] Herein, examples of the hydrocarbon group specifically include an alkyl group such as a methyl group, an ethyl group, a propyl group, and a butyl, an alkylene group such as a methylene group, an ethylene group, a trimethylene group, and a propylene group, an alkenyl group such as a vinyl group, and an allyl, and a phenyl group.

[57] Examples of R represented by the mono- to tetra-valent groups more specifically include the residues in which hydrogen atoms are removed from the hydroxyl groups of alcohols or amines.

[58] Examples of the alcohols or amines include a compound represented by a monovalent group, such as 2-ethylhexylalcohol, laurylalcohol, cetylalcohol, oleylalcohol, tridecylalcohol, tallow alcohol and palm oil alcohol, and mo- noethanolamine, a compound represented by a divalent group, such as ethyleneglycol, propylene glycol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 2,3-butanediol, 1,4-butanediol, 2-methyl-l,2-propanediol, 2-methyl-l,3-propandiol, and di- ethanolamine, a compound represented by a trivalent group, such as glycerin, trimethy- lolethane, and trimethylolpropane, and a compound represented by a tetravalent group, such as pentaerythritol, sorbitol, triethanolamine, ethylenediamine, and propy- lenediamine.

[59] In the formula (II), m represents an integer of 1 or more and 4 or less, corresponding to R.

[60] In the nonionic surfactant represented by the formulae (I) and (III), it is preferable that the average molecular weight of the total of the oxy propylene groups is usually 500 to 5000, preferably 900 to 3500, more preferably 1500 to 3500. If the average molecular weight is less than 500, the stripping performance is likely to be insufficient, whereas if the average molecular weight is more than 5000, the solubility in the preparation tends to be deteriorated.

[61] In the nonionic surfactant represented by the formulae (II) and (IV), the average molecular weight of the total is usually 300 to 10000, preferably 500 to 8000, and more preferably 800 to 5000. If the average molecular weight is less than 300, the stripping performance is likely to be insufficient, whereas if the average molecular weight is more than 10000, the solubility in the preparation tends to be deteriorated.

[62] Specific examples of the nonionic surfactant represented by the formula (I) include a polyoxyethylene/polyoxypropylene condensate, and specific examples of the nonionic surfactant represented by the formula (II) include a polyoxyethylene/poly- oxybutylene condensate.

[63] These condensates may be block copolymers or random copolymers.

[64] Specific examples of the nonionic surfactant represented by the formula (III) include a polyoxyethylene/ polyoxypropylene 2-ethylhexylether, a polyoxyethylene/ polyoxypropylene laurylethyl, a polyoxyethylene/polyoxypropylene stearylether, a glycerin- added polyoxyethylene/polyoxypropylene condensate, and an ethylenediamine- added polyoxyethylene/polyoxypropylene condensate and specific examples of the nonionic surfactant represented by the formula (IV) include poly- oxyethylene/polyoxybutylene 2-ethylhexylether, polyoxyethylene/polyoxybutylene laurylethyl, polyoxyethylene/polyoxybutylene stearylethyl, glycerin- added poly- oxyethylene/polyoxybutylene condensate, and ethylenediamine- added poly- oxyethylene/polyoxybutylene condensate.

[65] At least two kinds of the nonionic surfactants may be contained in the stripper of the present invention, and the surfactants represented by the formulae (I) to (IV) may be each contained alone, or in combination with at least two kinds thereof.

[66] The surfactants represented by the formulae (I) to (IV) are contained in an amount of usually 0.0001 to 10% by weight, preferably 0.001 to 1.0% by weight, and more preferably 0.01 to 0.5% by weight in the stripper of the present invention. If the nonionic surfactant is contained in an amount of less than 0.0001% by weight, the resist on the glass substrate may be uniformly removed, whereas if the nonionic surfactant is contained in an amount of more than 10% by weight, the foaming property of the stripper tends to be severe, and thus not to be easily handled.

[67] Examples of the anionic surfactant include alkyldiphenyl etherdisulfonic acid, alkylenedisulfonic acid, alkylbenzenesulfonic acid, dialkylsuccinatesulfonic acid, monoalkylsuccinatesulfonic acid, alkylphenoxyethoxyethylsulfonic acid, naphthale- nesulfonic acid formaline condensate, phenolsulfonic acid formaline condensate, phenylphenolsulfonic acid formaline condensate, polyoxyalkylene alkylphenylethersulfuric acid ester, polyoxyalkylenealkylethersulfuric acid ester, polyoxyalkylene polycyclic phenylethersulfuric acid ester, polyoxyalkylene arylethersulfuric acid ester, alkylmethyltaurine, acylmethyltaurine, fatty acid methyltaurine, polyoxyalkylenealkylether phosphoric acid, polyoxyalkyle- nealkylphenylether phosphoric acid, acylsarcosine, fatty acid sarcosine, alkylsulfo- succinate, and polyoxyalkylenealkylsulfosuccinate.

[68] Examples of the cationic surfactant include alkyltrimethylammonium salt, alky- lamidoamine, and alkyldimethylbenzylammonium salt.

[69] In addition to these, if desired, an inorganic acid, an organic acid, or the like can be used.

[70] Examples of the inorganic acid include boric acid, iodic acid, phosphoric acid, diphosphoric acid, tripolyphosphoric acid, sulfuric acid, hypochlorous acid, chlorous acid, perchloric acid, nitric acid, nitrous acid, hypophosphoric acid, phosphorous acid, sulfurous acid, hydrobromic acid, hydrochloric acid, hydrofluoric acid, hydroiodic acid, hydrosulfuric acid, peroxyacetic acid, peroxyphosphoric acid, peroxy- diphosphoric acid, peroxysulfuric acid, and peroxydisulfuric acid.

[71] Examples of the organic acid include formic acid, acetic acid, propionic acid, glyoxylic acid, pyruvic acid, gluconic acid, 2-ketoglutaric acid, 1,3-acetonedicarboxylic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic aid, pymeric acid, malephosphoric acid, fumaric acid, phthalic acid, hy- droxylactic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, asparagic acid, and glutamic acid.

[72] The stripper of the present invention can be obtained by mixing each of the components. The mixing order or the mixing method is not particularly limited, and a known method can be employed.

[73] The temperature as used in the stripper of the present invention is in the range of usually 10 to 8O⁰C, preferably 30 to 8O⁰C, and more preferably 40 to 7O⁰C.

[74] Examples of the method for stripping and removing the resist and the dry etching residue on a FPD substrate using the stripper of the present invention include, for example, a method comprising adjusting the temperature of the stripper of the present invention to the above-described range, and dipping it in the FPD substrate, or a method comprising elevating the temperature of the stripper of the present invention to the above-described range, and spraying it on the substrate. In this case, it is also possible to improve the stripping efficiency by rotating the substrate, or by moving the lower part of the swelling-out stripping solution at a constant rate. Further, in this case, the method may be carried out in combination with ultrasonic irradiation, or physical treatments such as contact with a rotating or rocking vibrating brush.

[75] After the treatment with the stripper, the residual stripping solution on the surface of the substrate can be removed by a subsequent rinsing treatment. In the rinsing process, the same procedure as for the treatment with the stripper is carried out, except that water or isopropyl alcohol is used instead of the stripper. Generally, if water is used in the rinsing process, the residual stripper may be dispersed in the rinsing solution, whereby the dispersed stripper component causes corrosion of the metal wire on the substrate. Thus, prior to carrying out rinsing with water, rinsing with isopropyl alcohol, etc. may be carried out, which contributes to the increased number of the processes for FPD preparation. However, since in the stripper of the present invention, metal wire corrosion is not caused in the water rinsing process, as well as in the stripping process, the need of rinsing with isopropyl alcohol is eliminated, thus the number of the preparation processes being not increased.

[76] The stripper of the present invention can be used for removing the resist or the dry etching residue after the dry etching process in the FPD preparation.

[77] More specifically, the method for stripping the resist comprises the steps of: (I) forming a resist layer on an inorganic film formed on a substrate, (II) selectively exposing the resist layer, (III) preparing a resist pattern by developing the resist layer after exposure, (IV) dry etching the inorganic film using the resist pattern as a mask, and (V) stripping the resist pattern and the etching residue generated from the dry etching from the substrate after etching, wherein the resist pattern and the dry etching residue after etching are stripped using the stripper composition of the present invention.

[78] The substrate employed in the FPD preparation may be flexible or foldable plastics, papers, or nonwoven fabrics, further rigid metals or ceramics, as well as a glass substrate.

[79] Examples of the display mode which functions as a display include an organic EL display mode, inorganic EL display mode, a plasma display mode, an electroluminescent display mode, an electronic paper display mode, an electrophoretic display mode, electrodeposition dissolution display mode, and light recording electronic paper display mode, as well as a liquid crystal display mode.

[80] In order to remove the resist pattern and the dry etching residue after the dry etching process in the preparation of the above-described kinds of the FPD's, the stripper composition of the present invention can be employed. Mode for the Invention

[81] Hereinafter, the present invention will be described in more detail by means of the following Experimental Examples, but the scope of the invention is not limited thereto.

[82] Experimental Example 1

[83] By means of an ordinary method, a test specimen, in which Al-Nd/Mo had been formed and a wiring pattern had been formed using a photoresist on a glass substrate using a thin film sputtering process, was immersed in an ordinary etching solution to etch the metal film, and then the test specimen was dipped in the stripping solution prepared from the compounds as depicted in Table 1 under the treatment conditions as shown in Table 2, and washed with deionized water. Thereafter, the results were observed using a scanning electron microscope (SEM, HITACHI S-4700) to evaluate the abilities of stripping the photoresist film, and of inhibiting the corrosion of the metal layer and the lower layer. The results thereof are shown in Table 2. The criteria for evaluation are shown in Table 2. The criteria for evaluation by SEM are as follows.

[84] [Stripping ability]

[85] ®: Good, Δ: Moderate, x: Poor

[86] [Corrosion inhibiting ability]

[87] ®: Good, Δ: Moderate, x: Poor

[88] Table 1

[89] Note)

[90] TMAH: Tetramethylammonium hydroxide

[91] MEA: Monoethanolamine

[92] MIPA: Isopropanolamine

[93] BDG: Diethyleneglycol monobutylether

[94] EGB: Ethyleneglycol monobutylether

[95] TEGB: Triethyleneglycol monobutylether

[96] EG: Ethyleneglycol

[97] PG: Propyleneglycol

[98] TEG: Triethyleneglycol

[99] Table 2

[ 100] Experimental Example 2

[101] The effect of the addition of urea compounds was observed on the basis of the descriptions in Experimental Example 1. A specimen (Specimen 1) obtained by immersing, by means of an ordinary method, a test specimen, in which an Al-Nd/Mo double layer had been formed and a wiring pattern had been formed using a photoresist on a glass substrate using a thin film sputtering process, in an ordinary etching solution to etch the metal film, and a specimen (Specimen 2) obtained by immersing, by means of an ordinary method, a test specimen, in which SiN had been formed and a wiring pattern had been formed using a photoresist on a glass substrate using a thin film sputtering process, in an ordinary etching solution to etch the metal film, were prepared, respectively. The Specimen 1 and Specimen 2 were dipped in the stripping solution prepared from the compounds as depicted in Table 3 under the treatment conditions as shown in Table 4, and washed with deionized water, respectively. Thereafter, the results were observed using a scanning electron microscope (SEM, HITACHI S-4700). For the Specimen 1, the abilities of stripping the photoresist film, and of inhibiting the corrosion of the lower layer were evaluated, and for the Specimen 2, the degree of removal of the dry etching residue. The results thereof are shown in Table 4.

[102] Table 3

[103] TMAH : Tetramethylammonium hydroxide

[104] MEA: Monoethanolamine

[105] MIPA: Isopropanolamine

[106] NMP: N-methyl-2-pyrrolidone

[107] DMSO: Dimethyl sulfoxide

[108] THFA: Tetrahydrofurfurylalcohol

[109] BDG: Diethyleneglycol monobutylether

[110] EGB : Ethyleneglycol monobutylether

[111] TEGB : Triethyleneglycol monobutylether

[112] EG: Ethyleneglycol

[113] PG: Propyleneglycol

[114] TEG: Triethyleneglycol

[115] Table 4

Table 4 confirmed that in the case of adding the urea compounds, the solubility of the dry etching residue in the stripper is excellent, without affecting the stripping ability and the corrosion inhibiting ability of the stripper. The above results are not limited to the cases of urea among the urea compounds. Industrial Applicability [117] The composition of the present invention can be used as a resist stripper composition which can uniformly remove the resist and the dry etching residue in a short period of time after the dry etching process in the FPD preparation, and which does not generate metal wire corrosion in the water rinsing after the stripping process.

[118]

Claims

Claims

[1] A resist stripper composition comprising:

(A) urea compounds,

(B) alkanol amines or hydroxides,

(C) metal corrosion inhibitor,

(D) an organic solvent, and

(E) water.

[2] The resist stripper composition according to claim 1, wherein the urea compound as the component (A) is at least one compound selected from the group consisting of urea, urea acetate, urea phosphate, thiourea, peroxyurea, and hy- droxylurea.

[3] The resist stripper composition according to claim 1, wherein the alkanol amine as the component (B) is at least one compound selected from the group consisting of 2-(ethyl amino)ethanol, 2-(methylamino)ethanol, and 1 -amino-2-propanol.

[4] The resist stripper composition according to claim 1, wherein the hydroxide as the component (B) is at least one compound selected from the group consisting of ammonium hydroxide, potassium hydroxide, sodium hydroxide, tetramethy- lammonium hydroxide, and choline.

[5] The resist stripper composition according to claim 1, wherein the metal corrosion inhibitor as the component (C) is at least one compound selected from the group consisting of sugars and organic compounds containing at least one of nitrogen, oxygen, phosphor and sulfur in the molecule.

[6] The resist stripper composition according to claim 5, wherein the organic compound is at least one compound selected from the benzene derivatives containing at least two hydroxyl groups in the molecule

[7] The resist stripper composition according to claim 5, wherein the sugar is at least one compound selected from sugar alcohols.

[8] The resist stripper composition according to claim 1, wherein the organic solvent as the component (D) is a compound having a solubility parameter δ in the range of 8 to 16.

[9] The resist stripper composition according to claim 1, wherein the content of the urea compounds as the component (A) is 0.01 to 15% by weight, the content of the alkanol amines or hydroxides as the component (B) is 10 to 60% by weight, the content of the metal corrosion inhibitor as the component (C) is 0.01 to 20% by weight, the content of the organic solvent as the component (D) is 20 to 90% by weight, and the content of water is the residual amount. [10] A method for stripping the resist, comprising the steps of:

(I) forming a resist layer on an inorganic film formed on a substrate,

(II) selectively exposing the resist layer,

(HI) preparing a resist pattern by developing the resist layer after exposure,

(IV) dry etching the inorganic film using the resist pattern as a mask, and

(V) stripping the resist pattern and the etching residue generated from the dry etching from the substrate, wherein the resist pattern after etching and the dry etching residue generated after dry etching are stripped from the substrate using the stripper composition according to any one of claims 1 to 9.