JP2015501078A5 - - Google Patents

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JP2015501078A5
JP2015501078A5 JP2014534591A JP2014534591A JP2015501078A5 JP 2015501078 A5 JP2015501078 A5 JP 2015501078A5 JP 2014534591 A JP2014534591 A JP 2014534591A JP 2014534591 A JP2014534591 A JP 2014534591A JP 2015501078 A5 JP2015501078 A5 JP 2015501078A5
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gas
substrate
silicon
flow rate
surface area
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JP2014534591A
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JP2015501078A (ja
JP6204917B2 (ja
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Priority claimed from PCT/US2012/056928 external-priority patent/WO2013052298A1/en
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JP2014534591A 2011-10-07 2012-09-24 アルゴンガス希釈によるシリコン含有層を堆積するための方法 Active JP6204917B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161544432P 2011-10-07 2011-10-07
US61/544,432 2011-10-07
US201261611532P 2012-03-15 2012-03-15
US61/611,532 2012-03-15
PCT/US2012/056928 WO2013052298A1 (en) 2011-10-07 2012-09-24 Methods for depositing a silicon containing layer with argon gas dilution

Publications (3)

Publication Number Publication Date
JP2015501078A JP2015501078A (ja) 2015-01-08
JP2015501078A5 true JP2015501078A5 (enExample) 2016-07-21
JP6204917B2 JP6204917B2 (ja) 2017-09-27

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JP2014534591A Active JP6204917B2 (ja) 2011-10-07 2012-09-24 アルゴンガス希釈によるシリコン含有層を堆積するための方法

Country Status (6)

Country Link
US (1) US9287137B2 (enExample)
JP (1) JP6204917B2 (enExample)
KR (3) KR101912888B1 (enExample)
CN (1) CN103828061B (enExample)
TW (1) TWI550722B (enExample)
WO (1) WO2013052298A1 (enExample)

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