KR101912888B1 - 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 - Google Patents

아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 Download PDF

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KR101912888B1
KR101912888B1 KR1020177007508A KR20177007508A KR101912888B1 KR 101912888 B1 KR101912888 B1 KR 101912888B1 KR 1020177007508 A KR1020177007508 A KR 1020177007508A KR 20177007508 A KR20177007508 A KR 20177007508A KR 101912888 B1 KR101912888 B1 KR 101912888B1
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silicon
layer
substrate
gas
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KR20170033917A (ko
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쿤후아 왕
웨이지 왕
영 진 최
선-미 조
이 쿠이
범 수 박
수 영 최
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020177007508A 2011-10-07 2012-09-24 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 Active KR101912888B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161544432P 2011-10-07 2011-10-07
US61/544,432 2011-10-07
US201261611532P 2012-03-15 2012-03-15
US61/611,532 2012-03-15
PCT/US2012/056928 WO2013052298A1 (en) 2011-10-07 2012-09-24 Methods for depositing a silicon containing layer with argon gas dilution

Related Parent Applications (1)

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KR1020147010463A Division KR20140074352A (ko) 2011-10-07 2012-09-24 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들

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KR1020187030621A Division KR20180118803A (ko) 2011-10-07 2012-09-24 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들

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KR20170033917A KR20170033917A (ko) 2017-03-27
KR101912888B1 true KR101912888B1 (ko) 2018-12-28

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KR1020147010463A Ceased KR20140074352A (ko) 2011-10-07 2012-09-24 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
KR1020177007508A Active KR101912888B1 (ko) 2011-10-07 2012-09-24 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
KR1020187030621A Ceased KR20180118803A (ko) 2011-10-07 2012-09-24 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들

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US (1) US9287137B2 (enExample)
JP (1) JP6204917B2 (enExample)
KR (3) KR20140074352A (enExample)
CN (1) CN103828061B (enExample)
TW (1) TWI550722B (enExample)
WO (1) WO2013052298A1 (enExample)

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KR102309747B1 (ko) 2013-08-30 2021-10-08 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 InGaAlN계 반도체 소자
CN103531640A (zh) * 2013-11-01 2014-01-22 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制造方法和显示装置
CN103730373B (zh) * 2013-12-31 2016-09-07 京东方科技集团股份有限公司 一种半导体器件的制备方法及半导体器件
KR102173644B1 (ko) * 2014-01-29 2020-11-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP6412322B2 (ja) * 2014-03-13 2018-10-24 東京エレクトロン株式会社 半導体デバイス、その製造方法、及びその製造装置
CN104538405B (zh) * 2015-01-04 2018-02-27 京东方科技集团股份有限公司 一种阵列基板及其制造方法和显示装置
CN105097550A (zh) * 2015-08-04 2015-11-25 深圳市华星光电技术有限公司 低温多晶硅薄膜晶体管的制作方法及低温多晶硅薄膜晶体管
TWI715645B (zh) * 2015-10-22 2021-01-11 美商應用材料股份有限公司 正形及縫隙填充非晶矽薄膜的沉積
JP6689140B2 (ja) * 2016-06-17 2020-04-28 東京エレクトロン株式会社 成膜方法およびｔｆｔの製造方法
RU2650381C1 (ru) * 2016-12-12 2018-04-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Способ формирования тонких пленок аморфного кремния
US11152514B2 (en) 2017-09-29 2021-10-19 Intel Corporation Multi-layer crystalline back gated thin film transistor
TWI648844B (zh) 2017-11-06 2019-01-21 Industrial Technology Research Institute 薄膜電晶體及其製造方法
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