JP6204917B2 - アルゴンガス希釈によるシリコン含有層を堆積するための方法 - Google Patents

アルゴンガス希釈によるシリコン含有層を堆積するための方法 Download PDF

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JP6204917B2
JP6204917B2 JP2014534591A JP2014534591A JP6204917B2 JP 6204917 B2 JP6204917 B2 JP 6204917B2 JP 2014534591 A JP2014534591 A JP 2014534591A JP 2014534591 A JP2014534591 A JP 2014534591A JP 6204917 B2 JP6204917 B2 JP 6204917B2
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silicon
gas
substrate
layer
flow rate
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JP2015501078A5 (enExample
JP2015501078A (ja
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クンフア ワン
クンフア ワン
ウェイジエ ワン
ウェイジエ ワン
ヤング ジン チョイ
ヤング ジン チョイ
セオン−ミー チョー
セオン−ミー チョー
イー クイ
イー クイ
べオム スー パーク
べオム スー パーク
スー ヤング チョイ
スー ヤング チョイ
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Applied Materials Inc
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014534591A 2011-10-07 2012-09-24 アルゴンガス希釈によるシリコン含有層を堆積するための方法 Active JP6204917B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161544432P 2011-10-07 2011-10-07
US61/544,432 2011-10-07
US201261611532P 2012-03-15 2012-03-15
US61/611,532 2012-03-15
PCT/US2012/056928 WO2013052298A1 (en) 2011-10-07 2012-09-24 Methods for depositing a silicon containing layer with argon gas dilution

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JP2015501078A JP2015501078A (ja) 2015-01-08
JP2015501078A5 JP2015501078A5 (enExample) 2016-07-21
JP6204917B2 true JP6204917B2 (ja) 2017-09-27

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US (1) US9287137B2 (enExample)
JP (1) JP6204917B2 (enExample)
KR (3) KR101912888B1 (enExample)
CN (1) CN103828061B (enExample)
TW (1) TWI550722B (enExample)
WO (1) WO2013052298A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW201438199A (zh) * 2013-03-29 2014-10-01 Hon Hai Prec Ind Co Ltd 主動式固態發光顯示器
CN105518868B (zh) 2013-08-30 2019-06-28 国立研究开发法人科学技术振兴机构 InGaAlN基半导体元件
CN103531640A (zh) * 2013-11-01 2014-01-22 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制造方法和显示装置
CN103730373B (zh) 2013-12-31 2016-09-07 京东方科技集团股份有限公司 一种半导体器件的制备方法及半导体器件
KR102173644B1 (ko) * 2014-01-29 2020-11-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP6412322B2 (ja) * 2014-03-13 2018-10-24 東京エレクトロン株式会社 半導体デバイス、その製造方法、及びその製造装置
CN104538405B (zh) * 2015-01-04 2018-02-27 京东方科技集团股份有限公司 一种阵列基板及其制造方法和显示装置
CN105097550A (zh) * 2015-08-04 2015-11-25 深圳市华星光电技术有限公司 低温多晶硅薄膜晶体管的制作方法及低温多晶硅薄膜晶体管
TWI715645B (zh) * 2015-10-22 2021-01-11 美商應用材料股份有限公司 正形及縫隙填充非晶矽薄膜的沉積
JP6689140B2 (ja) * 2016-06-17 2020-04-28 東京エレクトロン株式会社 成膜方法およびｔｆｔの製造方法
RU2650381C1 (ru) * 2016-12-12 2018-04-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" Способ формирования тонких пленок аморфного кремния
DE112017007929T5 (de) 2017-09-29 2020-06-04 Intel Corporation Kristalliner mehrschicht-dünnfilm-transistor mit rückseitigem gate hintergrund
TWI648844B (zh) 2017-11-06 2019-01-21 Industrial Technology Research Institute 薄膜電晶體及其製造方法
KR20190061872A (ko) * 2017-11-28 2019-06-05 주식회사 원익아이피에스 비정질 실리콘막의 형성 방법
US10768532B2 (en) * 2018-05-15 2020-09-08 International Business Machines Corporation Co-optimization of lithographic and etching processes with complementary post exposure bake by laser annealing
JP7130548B2 (ja) * 2018-07-30 2022-09-05 東京エレクトロン株式会社 成膜方法及び成膜装置
TWI699892B (zh) * 2018-09-21 2020-07-21 友達光電股份有限公司 電子裝置及其製造方法
US10672797B2 (en) * 2018-09-30 2020-06-02 Chongqing Hkc Optoelectronics Technology Co., Ltd. Array substrate, method for fabricating array substrate and display
US10748759B2 (en) 2019-01-15 2020-08-18 Applied Materials, Inc. Methods for improved silicon nitride passivation films
TW202425082A (zh) * 2019-02-19 2024-06-16 美商應用材料股份有限公司 多晶矽襯墊
US11037851B2 (en) 2019-08-30 2021-06-15 Applied Materials, Inc. Nitrogen-rich silicon nitride films for thin film transistors
US11495512B2 (en) * 2020-04-30 2022-11-08 Wisconsin Alumni Research Foundation Flexible transistors with near-junction heat dissipation
TWI756757B (zh) * 2020-07-28 2022-03-01 國立中山大學 薄膜電晶體的製造方法
CN117265513A (zh) * 2023-09-20 2023-12-22 江西兆驰半导体有限公司 一种led钝化层及其制备方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5773174A (en) * 1980-10-24 1982-05-07 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for coating film
JP2633551B2 (ja) * 1987-03-18 1997-07-23 株式会社東芝 薄膜形成方法
KR920010885A (ko) 1990-11-30 1992-06-27 카나이 쯔또무 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치
EP1335419A3 (en) * 1994-06-15 2003-08-27 Seiko Epson Corporation Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
AUPM982294A0 (en) 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
JPH08288271A (ja) * 1995-04-18 1996-11-01 Sony Corp 成膜方法およびこれに用いる成膜装置
WO1997022141A1 (en) * 1995-12-14 1997-06-19 Seiko Epson Corporation Method of manufacturing thin film semiconductor device, and thin film semiconductor device
FR2743193B1 (fr) 1996-01-02 1998-04-30 Univ Neuchatel Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede
JPH10117006A (ja) 1996-08-23 1998-05-06 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
JP2985789B2 (ja) * 1996-08-30 1999-12-06 日本電気株式会社 半導体装置の製造方法
US6730368B1 (en) * 1997-09-25 2004-05-04 Kabushiki Kaisha Toshiba Method of preparing a poly-crystalline silicon film
JPH11102861A (ja) * 1997-09-25 1999-04-13 Toshiba Corp 多結晶シリコン薄膜の製造方法
EP1041646B1 (en) 1997-11-10 2012-12-12 Kaneka Corporation Method of producing silicon thin-film photoelectric transducer
EP0994515B1 (en) 1998-10-12 2007-08-22 Kaneka Corporation Method of manufacturing silicon-based thin-film photoelectric conversion device
EP1032052B1 (en) 1999-02-26 2010-07-21 Kaneka Corporation Method of manufacturing silicon based thin film photoelectric conversion device
JP3589581B2 (ja) 1999-02-26 2004-11-17 株式会社カネカ タンデム型の薄膜光電変換装置の製造方法
JP3046965B1 (ja) 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
IT1312150B1 (it) 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
TW480554B (en) * 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
DE19935046C2 (de) 1999-07-26 2001-07-12 Schott Glas Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung
JP2001110724A (ja) * 1999-10-06 2001-04-20 Matsushita Electric Ind Co Ltd アモルファスシリコン薄膜とそれを用いたポリシリコン薄膜の製造方法
JP4493779B2 (ja) * 2000-01-31 2010-06-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2001067521A1 (en) 2000-03-03 2001-09-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2001345272A (ja) 2000-05-31 2001-12-14 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子
JP2001168100A (ja) * 2000-08-25 2001-06-22 Seiko Epson Corp 半導体装置の製造方法
WO2002019363A2 (en) * 2000-08-28 2002-03-07 Applied Materials, Inc. Pre-polycoating of glass substrates
US6566159B2 (en) 2000-10-04 2003-05-20 Kaneka Corporation Method of manufacturing tandem thin-film solar cell
JP2002176180A (ja) * 2000-12-06 2002-06-21 Hitachi Ltd 薄膜半導体素子及びその製造方法
JP4610080B2 (ja) * 2000-12-25 2011-01-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
TW523931B (en) * 2001-02-20 2003-03-11 Hitachi Ltd Thin film transistor and method of manufacturing the same
JP4433131B2 (ja) 2001-03-22 2010-03-17 キヤノン株式会社 シリコン系薄膜の形成方法
US6649032B2 (en) * 2001-05-21 2003-11-18 Sharp Laboratories Of America, Inc. System and method for sputtering silicon films using hydrogen gas mixtures
US6869838B2 (en) * 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
JP2003264198A (ja) * 2003-02-06 2003-09-19 Nec Corp 薄膜トランジスタおよび薄膜トランジスタを用いた電子機器
JP4341062B2 (ja) * 2003-02-12 2009-10-07 日本電気株式会社 薄膜トランジスタおよびその製造方法
US6759277B1 (en) 2003-02-27 2004-07-06 Sharp Laboratories Of America, Inc. Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates
JP2005004183A (ja) * 2003-05-20 2005-01-06 Advanced Lcd Technologies Development Center Co Ltd 発光型表示装置
JP2005247678A (ja) * 2004-02-03 2005-09-15 Seiko Epson Corp 酸化シリコン膜の形成方法および酸化シリコン膜
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
KR100718837B1 (ko) 2004-12-30 2007-05-16 삼성전자주식회사 반구형 실리콘을 갖는 캐패시터의 제조 방법 및 이를이용한 반도체 장치의 제조 방법
US7816236B2 (en) 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7829159B2 (en) * 2005-12-16 2010-11-09 Asm Japan K.K. Method of forming organosilicon oxide film and multilayer resist structure
JP5309426B2 (ja) 2006-03-29 2013-10-09 株式会社Ｉｈｉ 微結晶シリコン膜形成方法及び太陽電池
US7655542B2 (en) 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
JP5105842B2 (ja) * 2006-12-05 2012-12-26 キヤノン株式会社 酸化物半導体を用いた表示装置及びその製造方法
KR101344483B1 (ko) * 2007-06-27 2013-12-24 삼성전자주식회사 박막 트랜지스터
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP5395384B2 (ja) * 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP4606450B2 (ja) * 2007-11-05 2011-01-05 株式会社日立製作所 表示装置
JP5469851B2 (ja) * 2007-11-27 2014-04-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101412761B1 (ko) * 2008-01-18 2014-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP5306705B2 (ja) * 2008-05-23 2013-10-02 株式会社半導体エネルギー研究所 半導体装置
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
JP5564331B2 (ja) * 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101293261B1 (ko) * 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
KR101810254B1 (ko) * 2009-11-06 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 동작 방법
JP2011139052A (ja) * 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置

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