JP2014521111A5 - - Google Patents

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Publication number
JP2014521111A5
JP2014521111A5 JP2014517551A JP2014517551A JP2014521111A5 JP 2014521111 A5 JP2014521111 A5 JP 2014521111A5 JP 2014517551 A JP2014517551 A JP 2014517551A JP 2014517551 A JP2014517551 A JP 2014517551A JP 2014521111 A5 JP2014521111 A5 JP 2014521111A5
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JP
Japan
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substrate table
mode
support structure
target portion
patterning device
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JP2014517551A
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English (en)
Japanese (ja)
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JP6236000B2 (ja
JP2014521111A (ja
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Priority claimed from PCT/EP2012/060133 external-priority patent/WO2013007442A1/en
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Publication of JP2014521111A5 publication Critical patent/JP2014521111A5/ja
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JP2014517551A 2011-07-08 2012-05-30 リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト Active JP6236000B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161505768P 2011-07-08 2011-07-08
US61/505,768 2011-07-08
PCT/EP2012/060133 WO2013007442A1 (en) 2011-07-08 2012-05-30 Lithographic patterning process and resists to use therein

Related Child Applications (1)

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JP2017208377A Division JP6637943B2 (ja) 2011-07-08 2017-10-27 リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト

Publications (3)

Publication Number Publication Date
JP2014521111A JP2014521111A (ja) 2014-08-25
JP2014521111A5 true JP2014521111A5 (enExample) 2015-07-16
JP6236000B2 JP6236000B2 (ja) 2017-11-22

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JP2014517551A Active JP6236000B2 (ja) 2011-07-08 2012-05-30 リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト
JP2017208377A Active JP6637943B2 (ja) 2011-07-08 2017-10-27 リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト

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JP2017208377A Active JP6637943B2 (ja) 2011-07-08 2017-10-27 リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト

Country Status (7)

Country Link
US (1) US9261784B2 (enExample)
EP (1) EP2729844B1 (enExample)
JP (2) JP6236000B2 (enExample)
KR (2) KR102009869B1 (enExample)
CN (2) CN108594599B (enExample)
TW (1) TWI631423B (enExample)
WO (1) WO2013007442A1 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9632411B2 (en) * 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6218192B2 (ja) * 2013-09-26 2017-10-25 国立研究開発法人物質・材料研究機構 高感度積層レジスト膜及びレジスト膜の感光度向上方法
JP6495025B2 (ja) 2014-01-31 2019-04-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 真空統合ハードマスク処理および装置
KR101845188B1 (ko) 2014-02-24 2018-04-03 도쿄엘렉트론가부시키가이샤 광 민감형 화학적 증폭 레지스트 내에 산 산탄 잡음으로 복제되는 euv 산탄 잡음의 완화
JP6758575B2 (ja) * 2014-02-24 2020-09-23 東京エレクトロン株式会社 感光性化学増幅レジスト化学物質およびプロセスを使用する方法および技術
WO2015127353A1 (en) 2014-02-24 2015-08-27 Tokyo Electron Limited Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist
DE112015000546T5 (de) 2014-02-25 2016-11-10 Tokyo Electron Limited Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists
FR3023843B1 (fr) * 2014-07-21 2016-07-22 Michelin & Cie Polymere modifie le long de la chaine et son procede de synthese
JP6427684B2 (ja) 2015-09-30 2018-11-21 富士フイルム株式会社 レジスト組成物、並びに、これを用いたレジスト膜、パターン形成方法及び電子デバイスの製造方法
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
CN109313394B (zh) 2016-05-13 2021-07-02 东京毅力科创株式会社 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制
TWI662360B (zh) 2016-05-13 2019-06-11 東京威力科創股份有限公司 藉由使用光劑之臨界尺寸控制
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US11092890B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11092889B2 (en) 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
KR102307977B1 (ko) 2018-07-31 2021-09-30 삼성에스디아이 주식회사 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
WO2020176181A1 (en) 2019-02-25 2020-09-03 Applied Materials, Inc. A film stack for lithography applications
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
KR102446362B1 (ko) 2019-10-15 2022-09-21 삼성에스디아이 주식회사 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법
WO2021089270A1 (en) * 2019-11-07 2021-05-14 Asml Netherlands B.V. Methods for improving uniformity in substrates in a lithographic process
WO2021146138A1 (en) 2020-01-15 2021-07-22 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
KR20220164031A (ko) 2020-04-03 2022-12-12 램 리써치 코포레이션 Euv 리소그래피 성능을 향상시키기 위한 사전 노출 포토레지스트 경화
US12159787B2 (en) * 2020-07-02 2024-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
US12222643B2 (en) 2020-07-02 2025-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and pattern formation method
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
JP7774611B2 (ja) * 2020-07-17 2025-11-21 ラム リサーチ コーポレーション 被膜を形成するための方法
KR102797476B1 (ko) 2020-11-13 2025-04-21 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
JPWO2022202402A1 (enExample) * 2021-03-26 2022-09-29
JP7769144B2 (ja) 2023-03-17 2025-11-12 ラム リサーチ コーポレーション Ｅｕｖパターニングのための乾式現像およびエッチングプロセスの単一プロセスチャンバへの統合

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837980B2 (ja) 1975-12-30 1983-08-19 富士通株式会社 フオトエツチングホウホウ
US5061599A (en) * 1986-06-11 1991-10-29 Hitachi, Ltd. Radiation sensitive materials
JP2516207B2 (ja) * 1987-03-05 1996-07-24 株式会社日立製作所 放射線感応性材料
US5178989A (en) 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes
EP0440374B1 (en) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JPH0422957A (ja) * 1990-05-17 1992-01-27 Fujitsu Ltd 電離放射線感光材料とパターン形成方法
JPH04107562A (ja) * 1990-08-29 1992-04-09 Fujitsu Ltd 有機ケイ素重合体およびレジスト組成物
JPH05117392A (ja) * 1991-10-30 1993-05-14 Fujitsu Ltd 有機ケイ素重合体およびレジスト組成物
US5352564A (en) * 1993-01-19 1994-10-04 Shin-Etsu Chemical Co., Ltd. Resist compositions
JP2953252B2 (ja) * 1993-01-19 1999-09-27 信越化学工業株式会社 レジスト材料
JPH0792683A (ja) * 1993-09-22 1995-04-07 Hitachi Ltd 放射線感光材料
US5534312A (en) * 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
JP3180629B2 (ja) * 1994-12-09 2001-06-25 三菱マテリアル株式会社 金属酸化物薄膜パターン形成用組成物及びその製造方法、金属酸化物薄膜パターンの形成方法並びに電子部品及び光学部品の製造方法
FR2759360B1 (fr) * 1997-02-10 1999-03-05 Commissariat Energie Atomique Materiau polymerique inorganique a base d'oxyde de tantale notamment a indice de refraction eleve, mecaniquement resistant a l'abrasion, son procede de fabrication et materiau optique comprenant ce materiau
TW574629B (en) * 1997-02-28 2004-02-01 Shinetsu Chemical Co Polystyrene derivative chemically amplified positive resist compositions, and patterning method
US6331378B1 (en) 1998-02-25 2001-12-18 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JP3299214B2 (ja) * 1999-03-12 2002-07-08 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP2001051418A (ja) * 1999-08-05 2001-02-23 Canon Inc 感光性樹脂及び該感光性樹脂を用いたレジスト組成物、並びに該レジスト組成物を用いた半導体装置・露光用マスクの製造方法及び該方法により製造された半導体装置・露光用マスク
US6849305B2 (en) * 2000-04-28 2005-02-01 Ekc Technology, Inc. Photolytic conversion process to form patterned amorphous film
JP2004525506A (ja) * 2001-02-05 2004-08-19 クァンティスクリプト・インコーポレーテッド Ｘ線／ｅｕｖ投影リソグラフィによる金属／半導体化合物の構造の作製方法
US7008749B2 (en) * 2001-03-12 2006-03-07 The University Of North Carolina At Charlotte High resolution resists for next generation lithographies
US6783917B2 (en) 2001-04-04 2004-08-31 Arch Specialty Chemicals, Inc. Silicon-containing acetal protected polymers and photoresists compositions thereof
JP4055543B2 (ja) * 2002-02-22 2008-03-05 ソニー株式会社 レジスト材料及び微細加工方法
US7326514B2 (en) * 2003-03-12 2008-02-05 Cornell Research Foundation, Inc. Organoelement resists for EUV lithography and methods of making the same
SG115693A1 (en) * 2003-05-21 2005-10-28 Asml Netherlands Bv Method for coating a substrate for euv lithography and substrate with photoresist layer
JP2004354417A (ja) * 2003-05-27 2004-12-16 Shin Etsu Chem Co Ltd ポジ型レジスト材料並びにこれを用いたパターン形成方法
US20060024589A1 (en) * 2004-07-28 2006-02-02 Siegfried Schwarzl Passivation of multi-layer mirror for extreme ultraviolet lithography
JP4595688B2 (ja) 2005-06-10 2010-12-08 ソニー株式会社 レジスト材料の製造方法およびレジスト材料ならびに露光方法
JP2007086268A (ja) * 2005-09-21 2007-04-05 Toray Ind Inc 感光性シート
TW200736834A (en) * 2005-12-27 2007-10-01 Kansai Paint Co Ltd Active energy ray-curable resin composition and method for forming resist pattern
CN101374650A (zh) * 2006-01-30 2009-02-25 佳能株式会社 制备多层光记录介质的方法和压模以及制造该压模的方法
KR100787450B1 (ko) * 2006-06-20 2007-12-26 삼성에스디아이 주식회사 감광성 페이스트 조성물 이를 이용하여 제조된 플라즈마디스플레이 패널의 격벽 및 이를 포함하는 플라즈마디스플레이 패널
JP2008256838A (ja) * 2007-04-03 2008-10-23 Canon Inc レチクル及びレチクルの製造方法
US7914970B2 (en) * 2007-10-04 2011-03-29 International Business Machines Corporation Mixed lithography with dual resist and a single pattern transfer
JP5407941B2 (ja) * 2009-03-09 2014-02-05 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
US20100255427A1 (en) * 2009-04-02 2010-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conformal photo-sensitive layer and process
CN101937838B (zh) * 2009-06-26 2012-10-03 罗门哈斯电子材料有限公司 形成电子器件的方法
JP5708522B2 (ja) * 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法

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