JP2014521111A5 - - Google Patents
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- JP2014521111A5 JP2014521111A5 JP2014517551A JP2014517551A JP2014521111A5 JP 2014521111 A5 JP2014521111 A5 JP 2014521111A5 JP 2014517551 A JP2014517551 A JP 2014517551A JP 2014517551 A JP2014517551 A JP 2014517551A JP 2014521111 A5 JP2014521111 A5 JP 2014521111A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate table
- mode
- support structure
- target portion
- patterning device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161505768P | 2011-07-08 | 2011-07-08 | |
| US61/505,768 | 2011-07-08 | ||
| PCT/EP2012/060133 WO2013007442A1 (en) | 2011-07-08 | 2012-05-30 | Lithographic patterning process and resists to use therein |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017208377A Division JP6637943B2 (ja) | 2011-07-08 | 2017-10-27 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014521111A JP2014521111A (ja) | 2014-08-25 |
| JP2014521111A5 true JP2014521111A5 (enExample) | 2015-07-16 |
| JP6236000B2 JP6236000B2 (ja) | 2017-11-22 |
Family
ID=46208008
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014517551A Active JP6236000B2 (ja) | 2011-07-08 | 2012-05-30 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
| JP2017208377A Active JP6637943B2 (ja) | 2011-07-08 | 2017-10-27 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017208377A Active JP6637943B2 (ja) | 2011-07-08 | 2017-10-27 | リソグラフィパターニングプロセスおよび同プロセス内で使用するレジスト |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9261784B2 (enExample) |
| EP (1) | EP2729844B1 (enExample) |
| JP (2) | JP6236000B2 (enExample) |
| KR (2) | KR101909567B1 (enExample) |
| CN (2) | CN108594599B (enExample) |
| TW (1) | TWI631423B (enExample) |
| WO (1) | WO2013007442A1 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9632411B2 (en) * | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
| WO2015046327A1 (ja) * | 2013-09-26 | 2015-04-02 | 独立行政法人物質・材料研究機構 | 高感度積層レジスト膜及びレジスト膜の感光度向上方法 |
| KR102306612B1 (ko) | 2014-01-31 | 2021-09-29 | 램 리써치 코포레이션 | 진공-통합된 하드마스크 프로세스 및 장치 |
| WO2015127459A1 (en) * | 2014-02-24 | 2015-08-27 | Tokyo Electron Limited | Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes |
| KR101845188B1 (ko) | 2014-02-24 | 2018-04-03 | 도쿄엘렉트론가부시키가이샤 | 광 민감형 화학적 증폭 레지스트 내에 산 산탄 잡음으로 복제되는 euv 산탄 잡음의 완화 |
| US9519227B2 (en) | 2014-02-24 | 2016-12-13 | Tokyo Electron Limited | Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist (PS-CAR) |
| KR102402422B1 (ko) | 2014-02-25 | 2022-05-25 | 도쿄엘렉트론가부시키가이샤 | 현상 가능한 하부 반사 방지 코팅 및 염색된 주입물 레지스트를 위한 화학 증폭 방법 및 기술 |
| FR3023843B1 (fr) * | 2014-07-21 | 2016-07-22 | Michelin & Cie | Polymere modifie le long de la chaine et son procede de synthese |
| KR102139060B1 (ko) * | 2015-09-30 | 2020-07-29 | 후지필름 가부시키가이샤 | 레지스트 조성물과, 이를 이용한 레지스트막, 패턴 형성 방법 및 전자 디바이스의 제조 방법 |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| TWI662360B (zh) | 2016-05-13 | 2019-06-11 | Tokyo Electron Limited | 藉由使用光劑之臨界尺寸控制 |
| CN109313394B (zh) | 2016-05-13 | 2021-07-02 | 东京毅力科创株式会社 | 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制 |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| KR102307977B1 (ko) | 2018-07-31 | 2021-09-30 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| US11092889B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
| US11092890B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| WO2020176181A1 (en) * | 2019-02-25 | 2020-09-03 | Applied Materials, Inc. | A film stack for lithography applications |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| KR20210149893A (ko) | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스 |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| CN114270266A (zh) | 2019-06-28 | 2022-04-01 | 朗姆研究公司 | 具有多个图案化辐射吸收元素和/或竖直组成梯度的光致抗蚀剂 |
| JP7589179B2 (ja) | 2019-06-28 | 2024-11-25 | ラム リサーチ コーポレーション | 金属含有レジストのリソグラフィ性能を向上させるためのベーキング方法 |
| KR102898764B1 (ko) | 2019-08-16 | 2025-12-10 | 도쿄엘렉트론가부시키가이샤 | 확률 중심 결함 교정을 위한 방법 및 공정 |
| KR102446362B1 (ko) | 2019-10-15 | 2022-09-21 | 삼성에스디아이 주식회사 | 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| CN114641731B (zh) * | 2019-11-07 | 2025-09-05 | Asml荷兰有限公司 | 用于在光刻过程中改善衬底的均匀性的方法 |
| EP4651192A3 (en) | 2020-01-15 | 2026-03-04 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| KR20220148249A (ko) | 2020-02-28 | 2022-11-04 | 램 리써치 코포레이션 | EUV 패터닝의 결함 감소를 위한 다층 하드마스크 (multi-layer hardmask) |
| WO2021202681A1 (en) | 2020-04-03 | 2021-10-07 | Lam Research Corporation | Pre-exposure photoresist curing to enhance euv lithographic performance |
| KR20230041688A (ko) | 2020-06-22 | 2023-03-24 | 램 리써치 코포레이션 | 금속-함유 포토레지스트 (photoresist) 증착을 위한 표면 개질 |
| US12222643B2 (en) | 2020-07-02 | 2025-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| US12159787B2 (en) * | 2020-07-02 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| EP4078292A4 (en) | 2020-07-07 | 2023-11-22 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| JP7774611B2 (ja) * | 2020-07-17 | 2025-11-21 | ラム リサーチ コーポレーション | 被膜を形成するための方法 |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP7681106B2 (ja) | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| JP7794190B2 (ja) * | 2021-03-26 | 2026-01-06 | Jsr株式会社 | 半導体基板の製造方法及びレジスト下層膜形成用組成物 |
| KR20240160248A (ko) | 2022-07-01 | 2024-11-08 | 램 리써치 코포레이션 | 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| KR20250069677A (ko) | 2023-07-27 | 2025-05-19 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
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| JPS5837980B2 (ja) | 1975-12-30 | 1983-08-19 | 富士通株式会社 | フオトエツチングホウホウ |
| US5061599A (en) * | 1986-06-11 | 1991-10-29 | Hitachi, Ltd. | Radiation sensitive materials |
| JP2516207B2 (ja) * | 1987-03-05 | 1996-07-24 | 株式会社日立製作所 | 放射線感応性材料 |
| US5178989A (en) | 1989-07-21 | 1993-01-12 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
| EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| JPH0422957A (ja) * | 1990-05-17 | 1992-01-27 | Fujitsu Ltd | 電離放射線感光材料とパターン形成方法 |
| JPH04107562A (ja) * | 1990-08-29 | 1992-04-09 | Fujitsu Ltd | 有機ケイ素重合体およびレジスト組成物 |
| JPH05117392A (ja) * | 1991-10-30 | 1993-05-14 | Fujitsu Ltd | 有機ケイ素重合体およびレジスト組成物 |
| US5352564A (en) * | 1993-01-19 | 1994-10-04 | Shin-Etsu Chemical Co., Ltd. | Resist compositions |
| JP2953252B2 (ja) * | 1993-01-19 | 1999-09-27 | 信越化学工業株式会社 | レジスト材料 |
| JPH0792683A (ja) * | 1993-09-22 | 1995-04-07 | Hitachi Ltd | 放射線感光材料 |
| US5534312A (en) * | 1994-11-14 | 1996-07-09 | Simon Fraser University | Method for directly depositing metal containing patterned films |
| JP3180629B2 (ja) * | 1994-12-09 | 2001-06-25 | 三菱マテリアル株式会社 | 金属酸化物薄膜パターン形成用組成物及びその製造方法、金属酸化物薄膜パターンの形成方法並びに電子部品及び光学部品の製造方法 |
| FR2759360B1 (fr) * | 1997-02-10 | 1999-03-05 | Commissariat Energie Atomique | Materiau polymerique inorganique a base d'oxyde de tantale notamment a indice de refraction eleve, mecaniquement resistant a l'abrasion, son procede de fabrication et materiau optique comprenant ce materiau |
| TW574629B (en) * | 1997-02-28 | 2004-02-01 | Shinetsu Chemical Co | Polystyrene derivative chemically amplified positive resist compositions, and patterning method |
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| JP3299214B2 (ja) | 1999-03-12 | 2002-07-08 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
| JP2001051418A (ja) * | 1999-08-05 | 2001-02-23 | Canon Inc | 感光性樹脂及び該感光性樹脂を用いたレジスト組成物、並びに該レジスト組成物を用いた半導体装置・露光用マスクの製造方法及び該方法により製造された半導体装置・露光用マスク |
| US6849305B2 (en) * | 2000-04-28 | 2005-02-01 | Ekc Technology, Inc. | Photolytic conversion process to form patterned amorphous film |
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| US7008749B2 (en) * | 2001-03-12 | 2006-03-07 | The University Of North Carolina At Charlotte | High resolution resists for next generation lithographies |
| JP2004519734A (ja) * | 2001-04-04 | 2004-07-02 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | ケイ素含有アセタール保護ポリマーおよびそのフォトレジスト組成物 |
| JP4055543B2 (ja) * | 2002-02-22 | 2008-03-05 | ソニー株式会社 | レジスト材料及び微細加工方法 |
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| SG115693A1 (en) * | 2003-05-21 | 2005-10-28 | Asml Netherlands Bv | Method for coating a substrate for euv lithography and substrate with photoresist layer |
| JP2004354417A (ja) * | 2003-05-27 | 2004-12-16 | Shin Etsu Chem Co Ltd | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
| US20060024589A1 (en) * | 2004-07-28 | 2006-02-02 | Siegfried Schwarzl | Passivation of multi-layer mirror for extreme ultraviolet lithography |
| JP4595688B2 (ja) | 2005-06-10 | 2010-12-08 | ソニー株式会社 | レジスト材料の製造方法およびレジスト材料ならびに露光方法 |
| JP2007086268A (ja) * | 2005-09-21 | 2007-04-05 | Toray Ind Inc | 感光性シート |
| TW200736834A (en) * | 2005-12-27 | 2007-10-01 | Kansai Paint Co Ltd | Active energy ray-curable resin composition and method for forming resist pattern |
| CN101374650A (zh) * | 2006-01-30 | 2009-02-25 | 佳能株式会社 | 制备多层光记录介质的方法和压模以及制造该压模的方法 |
| KR100787450B1 (ko) * | 2006-06-20 | 2007-12-26 | 삼성에스디아이 주식회사 | 감광성 페이스트 조성물 이를 이용하여 제조된 플라즈마디스플레이 패널의 격벽 및 이를 포함하는 플라즈마디스플레이 패널 |
| JP2008256838A (ja) * | 2007-04-03 | 2008-10-23 | Canon Inc | レチクル及びレチクルの製造方法 |
| US7914970B2 (en) * | 2007-10-04 | 2011-03-29 | International Business Machines Corporation | Mixed lithography with dual resist and a single pattern transfer |
| JP5407941B2 (ja) * | 2009-03-09 | 2014-02-05 | 信越化学工業株式会社 | ポジ型レジスト材料並びにこれを用いたパターン形成方法 |
| US20100255427A1 (en) * | 2009-04-02 | 2010-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conformal photo-sensitive layer and process |
| TWI474378B (zh) * | 2009-06-26 | 2015-02-21 | 羅門哈斯電子材料有限公司 | 形成電子裝置的方法 |
| JP5708522B2 (ja) * | 2011-02-15 | 2015-04-30 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
-
2012
- 2012-05-30 KR KR1020147003284A patent/KR101909567B1/ko active Active
- 2012-05-30 CN CN201810445598.3A patent/CN108594599B/zh active Active
- 2012-05-30 US US14/131,141 patent/US9261784B2/en active Active
- 2012-05-30 WO PCT/EP2012/060133 patent/WO2013007442A1/en not_active Ceased
- 2012-05-30 JP JP2014517551A patent/JP6236000B2/ja active Active
- 2012-05-30 KR KR1020187024586A patent/KR102009869B1/ko active Active
- 2012-05-30 EP EP12725373.0A patent/EP2729844B1/en active Active
- 2012-05-30 CN CN201280033742.3A patent/CN103649830B/zh active Active
- 2012-06-18 TW TW101121798A patent/TWI631423B/zh active
-
2017
- 2017-10-27 JP JP2017208377A patent/JP6637943B2/ja active Active
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