JP2013522882A5 - - Google Patents

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JP2013522882A5
JP2013522882A5 JP2012557245A JP2012557245A JP2013522882A5 JP 2013522882 A5 JP2013522882 A5 JP 2013522882A5 JP 2012557245 A JP2012557245 A JP 2012557245A JP 2012557245 A JP2012557245 A JP 2012557245A JP 2013522882 A5 JP2013522882 A5 JP 2013522882A5
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Japan
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etching
temperature
substrate
gas
plasma
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JP2012557245A
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JP2013522882A (ja
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Priority claimed from US12/720,942 external-priority patent/US20110065276A1/en
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JP2012557245A 2010-03-10 2011-03-10 周期的な酸化およびエッチングのための装置と方法 Pending JP2013522882A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/720,942 US20110065276A1 (en) 2009-09-11 2010-03-10 Apparatus and Methods for Cyclical Oxidation and Etching
US12/720,942 2010-03-10
PCT/US2011/027881 WO2011112802A2 (en) 2010-03-10 2011-03-10 Apparatus and methods for cyclical oxidation and etching

Publications (2)

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JP2013522882A JP2013522882A (ja) 2013-06-13
JP2013522882A5 true JP2013522882A5 (enExample) 2014-04-24

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JP2012557245A Pending JP2013522882A (ja) 2010-03-10 2011-03-10 周期的な酸化およびエッチングのための装置と方法

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US (1) US20110065276A1 (enExample)
JP (1) JP2013522882A (enExample)
KR (1) KR101881474B1 (enExample)
CN (1) CN102822947B (enExample)
TW (1) TWI525683B (enExample)
WO (1) WO2011112802A2 (enExample)

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