JP6043968B2 - プラズマ処理方法並びに電子デバイスの製造方法 - Google Patents
プラズマ処理方法並びに電子デバイスの製造方法 Download PDFInfo
- Publication number
- JP6043968B2 JP6043968B2 JP2014098348A JP2014098348A JP6043968B2 JP 6043968 B2 JP6043968 B2 JP 6043968B2 JP 2014098348 A JP2014098348 A JP 2014098348A JP 2014098348 A JP2014098348 A JP 2014098348A JP 6043968 B2 JP6043968 B2 JP 6043968B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- chamber
- substrate
- ceramic block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Description
以下、本発明の実施の形態1について、図1及び図2を参照して説明する。
以下、本発明の実施の形態2について、図3を参照して説明する。
以下、本発明の実施の形態3について、図4及び図5を参照して説明する。
以下、本発明の実施の形態4について、図6及び図7を参照して説明する。
以下、本発明の実施の形態5について、図8を参照して説明する。
以下、本発明の実施の形態6について、図9を参照して説明する。
以下、本発明の実施の形態7について、図10を参照して説明する。
2 基材
T 誘導結合型プラズマトーチユニット
3 コイル
4 第一セラミックブロック
5 第二セラミックブロック
7 チャンバ
8 開口部
9 プラズマガスマニホールド
11 プラズマガス供給穴
12 放電抑制ガスマニホールド
13 放電抑制ガス供給穴
P プラズマ
22 薄膜
Claims (2)
- 第一誘電体部材で囲まれた環状のチャンバを含む誘導結合型プラズマトーチユニットの前記チャンバ内に第一ガスである希ガスまたは希ガスを主体とするガスを供給しつつ、前記チャンバに連通する開口部から基材に向けて前記第一ガスを噴出すると共に、コイルに高周波電力を供給することで、前記チャンバ内に高周波電磁界を発生させてプラズマを発生させ、前記基材の表面を処理するプラズマ処理方法であって、
前記開口部は環状に形成されており、前記開口部の内側に第二ガスである希ガス以外のガスを主体とするガスを供給しながら前記誘導結合型プラズマトーチユニットと基材とを一方向に相対的に移動させながら前記基材を処理すること、
を特徴とするプラズマ処理方法。 - 第一誘電体部材で囲まれた長尺でかつ環状のチャンバを含む誘導結合型プラズマトーチユニットの前記チャンバ内に第一ガスである希ガスまたは希ガスを主体とするガスを供給しつつ、前記チャンバに連通する開口部から基材に向けて第一ガスを噴出すると共に、コイルに高周波電力を供給することで、前記チャンバ内に高周波電磁界を発生させてプラズマを発生させ、前記基材の表面を処理する電子デバイスの製造方法であって、
前記開口部は環状に形成されており、前記開口部の内側に第二ガスである希ガス以外のガスを主体とするガスを供給しながら前記誘導結合型プラズマトーチユニットと基材とを一方向に相対的に移動させながら前記基材を処理すること、
を特徴とする電子デバイスの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014098348A JP6043968B2 (ja) | 2013-10-30 | 2014-05-12 | プラズマ処理方法並びに電子デバイスの製造方法 |
US14/340,568 US9627183B2 (en) | 2013-10-30 | 2014-07-25 | Plasma processing device, plasma processing method and method of manufacturing electronic devices |
KR1020140148078A KR20150050445A (ko) | 2013-10-30 | 2014-10-29 | 플라즈마 처리 장치 및 방법, 및 전자 디바이스의 제조 방법 |
US15/454,235 US9673062B1 (en) | 2013-10-30 | 2017-03-09 | Plasma processing method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013224940 | 2013-10-30 | ||
JP2013224940 | 2013-10-30 | ||
JP2014098348A JP6043968B2 (ja) | 2013-10-30 | 2014-05-12 | プラズマ処理方法並びに電子デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015111543A JP2015111543A (ja) | 2015-06-18 |
JP6043968B2 true JP6043968B2 (ja) | 2016-12-14 |
Family
ID=52995915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014098348A Active JP6043968B2 (ja) | 2013-10-30 | 2014-05-12 | プラズマ処理方法並びに電子デバイスの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9627183B2 (ja) |
JP (1) | JP6043968B2 (ja) |
KR (1) | KR20150050445A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5617817B2 (ja) * | 2011-10-27 | 2014-11-05 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
JP2016119313A (ja) * | 2013-10-30 | 2016-06-30 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
CN106087040B (zh) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | 半导体多晶化系统和对单晶半导体基板进行多晶化的方法 |
CN107093545B (zh) * | 2017-06-19 | 2019-05-31 | 北京北方华创微电子装备有限公司 | 反应腔室的下电极机构及反应腔室 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5525159A (en) | 1993-12-17 | 1996-06-11 | Tokyo Electron Limited | Plasma process apparatus |
JP3422583B2 (ja) | 1994-03-23 | 2003-06-30 | 東京エレクトロン株式会社 | 処理装置 |
US6087778A (en) | 1996-06-28 | 2000-07-11 | Lam Research Corporation | Scalable helicon wave plasma processing device with a non-cylindrical source chamber having a serpentine antenna |
JPH10130851A (ja) * | 1996-10-25 | 1998-05-19 | Sekisui Chem Co Ltd | シート状基材の連続処理方法及びその装置 |
US6267074B1 (en) | 1997-02-24 | 2001-07-31 | Foi Corporation | Plasma treatment systems |
JP4043089B2 (ja) * | 1997-02-24 | 2008-02-06 | 株式会社エフオーアイ | プラズマ処理装置 |
US5989929A (en) * | 1997-07-22 | 1999-11-23 | Matsushita Electronics Corporation | Apparatus and method for manufacturing semiconductor device |
JP2001093871A (ja) * | 1999-09-24 | 2001-04-06 | Tadahiro Omi | プラズマ加工装置、製造工程およびそのデバイス |
JP4347986B2 (ja) * | 2000-03-22 | 2009-10-21 | パナソニック株式会社 | プラズマ処理装置 |
JP2004031621A (ja) | 2002-06-26 | 2004-01-29 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置及びプラズマ処理方法及びプラズマ成膜装置及びプラズマ成膜方法 |
JP2005307310A (ja) | 2004-04-23 | 2005-11-04 | Canon Inc | 堆積膜形成装置および堆積膜形成方法 |
JP4873405B2 (ja) | 2006-03-24 | 2012-02-08 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
US8871645B2 (en) | 2008-09-11 | 2014-10-28 | Applied Materials, Inc. | Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof |
JP4871343B2 (ja) * | 2008-11-25 | 2012-02-08 | パナソニック電工Sunx株式会社 | プラズマ処理装置 |
US20110065276A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110061810A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110061812A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
WO2012101891A1 (ja) * | 2011-01-25 | 2012-08-02 | 三菱電機株式会社 | 大気圧プラズマ処理装置および大気圧プラズマ処理方法 |
JP5897832B2 (ja) * | 2011-07-12 | 2016-03-30 | 富士機械製造株式会社 | 大気圧プラズマ処理システム |
JP5429268B2 (ja) | 2011-12-07 | 2014-02-26 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5510436B2 (ja) * | 2011-12-06 | 2014-06-04 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN103094038B (zh) | 2011-10-27 | 2017-01-11 | 松下知识产权经营株式会社 | 等离子体处理装置以及等离子体处理方法 |
JP5617817B2 (ja) * | 2011-10-27 | 2014-11-05 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
JP5467371B2 (ja) | 2011-12-07 | 2014-04-09 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
JP5830651B2 (ja) | 2012-03-02 | 2015-12-09 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及び方法 |
US10115565B2 (en) | 2012-03-02 | 2018-10-30 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
-
2014
- 2014-05-12 JP JP2014098348A patent/JP6043968B2/ja active Active
- 2014-07-25 US US14/340,568 patent/US9627183B2/en active Active
- 2014-10-29 KR KR1020140148078A patent/KR20150050445A/ko not_active Application Discontinuation
-
2017
- 2017-03-09 US US15/454,235 patent/US9673062B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9627183B2 (en) | 2017-04-18 |
US20170178925A1 (en) | 2017-06-22 |
US9673062B1 (en) | 2017-06-06 |
US20150118867A1 (en) | 2015-04-30 |
KR20150050445A (ko) | 2015-05-08 |
JP2015111543A (ja) | 2015-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6191887B2 (ja) | プラズマ処理装置 | |
US9673062B1 (en) | Plasma processing method | |
JP6064174B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2012174500A (ja) | プラズマ処理装置及び方法 | |
JP6473889B2 (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP2014209433A (ja) | プラズマ処理装置及び方法 | |
JP6379355B2 (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP6127276B2 (ja) | プラズマ処理装置及び方法 | |
JP2016119313A (ja) | プラズマ処理装置 | |
JP5857207B2 (ja) | プラズマ処理装置及び方法 | |
JP6857801B2 (ja) | プラズマ処理装置及びプラズマ処理方法、電子デバイスの製造方法 | |
WO2014045565A1 (ja) | プラズマ処理装置及び方法 | |
JP2015088260A (ja) | プラズマ処理装置及び方法 | |
JP6857799B2 (ja) | プラズマ処理装置及びプラズマ処理方法、電子デバイスの製造方法 | |
JP5578155B2 (ja) | プラズマ処理装置及び方法 | |
JP2014060035A (ja) | プラズマ処理方法及びプラズマ処理装置 | |
JP2016062716A (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP5413421B2 (ja) | 誘導結合型プラズマ処理装置及び方法 | |
JP2016225190A (ja) | プラズマ処理装置及び方法、電子デバイスの製造方法 | |
JP2017182966A (ja) | プラズマ処理装置及びプラズマ処理方法、電子デバイスの製造方法 | |
JP2013037978A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2016001611A (ja) | プラズマ処理装置及び方法 | |
JP2015099642A (ja) | プラズマ処理装置及び方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150730 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160212 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20160520 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160809 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160909 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161004 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161017 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6043968 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |