JP2015111543A - プラズマ処理装置及び方法、並びに電子デバイスの製造方法 - Google Patents
プラズマ処理装置及び方法、並びに電子デバイスの製造方法 Download PDFInfo
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H01J37/32—Gas-filled discharge tubes
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- H01J37/32366—Localised processing
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Abstract
Description
以下、本発明の実施の形態1について、図1及び図2を参照して説明する。
以下、本発明の実施の形態2について、図3を参照して説明する。
以下、本発明の実施の形態3について、図4及び図5を参照して説明する。
以下、本発明の実施の形態4について、図6及び図7を参照して説明する。
以下、本発明の実施の形態5について、図8を参照して説明する。
以下、本発明の実施の形態6について、図9を参照して説明する。
以下、本発明の実施の形態7について、図10を参照して説明する。
2 基材
T 誘導結合型プラズマトーチユニット
3 コイル
4 第一セラミックブロック
5 第二セラミックブロック
7 チャンバ
8 開口部
9 プラズマガスマニホールド
11 プラズマガス供給穴
12 放電抑制ガスマニホールド
13 放電抑制ガス供給穴
P プラズマ
22 薄膜
Claims (13)
- 第一誘電体部材に囲まれた長尺でかつ環状のチャンバと、前記チャンバに連通する開口部と、前記チャンバ内に第一ガスを導入するための第一ガス供給配管と、前記チャンバ近傍に設けられたコイルと、前記コイルに接続された高周波電源と、基材載置台とを備えたプラズマ処理装置であって、
前記基材載置台がなす面に平行な面に沿って前記チャンバが配置されており、前記チャンバの内側に第二ガスを導入するための第二ガス供給配管を備えたこと、
を特徴とするプラズマ処理装置。 - 前記チャンバを冷却するための冷却部を備え、前記第一誘電体部材と前記冷却部の間に、第一誘電体部材よりも熱伝導率が大きい第二誘電体部材が設けられていることを特徴とする、請求項1記載のプラズマ処理装置。
- 前記基材載置台がなす面に平行な面に沿って前記コイルが設けられていることを特徴とする、請求項1記載のプラズマ処理装置。
- 前記開口部が少なくとも2つの長尺な直線部を有し、前記開口部の長手方向に対して垂直な向きに、前記チャンバと前記基材載置台とを相対的に移動可能とする移動機構を備えたことを特徴とする、請求項1記載のプラズマ処理装置。
- 前記第一誘電体部材が窒化シリコンを主成分とするセラミックス、または、シリコン、アルミニウム、酸素、窒素を主成分とするセラミックスであることを特徴とする、請求項2記載のプラズマ処理装置。
- 前記第二誘電体部材が窒化アルミニウムを主成分とするセラミックス、または、窒化ボロンを主成分とするセラミックスであることを特徴とする、請求項2記載のプラズマ処理装置。
- 前記コイルと前記チャンバの間に、前記チャンバに沿って冷媒流路を備えたことを特徴とする、請求項1記載のプラズマ処理装置。
- 第一ガスを溜める第一ガスマニホールドを備え、前記第一ガスマニホールドと前記チャンバが前記第一ガス供給配管によって連通され、第一ガス供給配管におけるガスの流れる方向が、前記チャンバがなす平面に対して傾斜していることを特徴とする、請求項7記載のプラズマ処理装置。
- 前記第一誘電体部材と、前記第一誘電体部材に貼り合わされた第二誘電体部材のいずれかに設けた溝が、前記冷媒流路を構成することを特徴とする、請求項7記載のプラズマ処理装置。
- 第一誘電体部材で囲まれた長尺でかつ環状のチャンバ内に第一ガスを供給しつつ、前記チャンバに連通する開口部から基材に向けて第一ガスを噴出すると共に、コイルに高周波電力を供給することで、前記チャンバ内に高周波電磁界を発生させてプラズマを発生させ、前記基材の表面を処理するプラズマ処理方法であって、
前記基材載置台がなす面に平行な面に沿って前記チャンバを配置し、前記チャンバの内側に第二ガスを供給しながら基材を処理すること、
を特徴とするプラズマ処理方法。 - 第一ガスが希ガス、または希ガスを主体とするガスであり、第二ガスが希ガス以外のガスを主体とするガスであることを特徴とする、請求項7記載のプラズマ処理方法。
- 第一誘電体部材で囲まれた長尺でかつ環状のチャンバ内に第一ガスを供給しつつ、前記チャンバに連通する開口部から基材に向けて第一ガスを噴出すると共に、コイルに高周波電力を供給することで、前記チャンバ内に高周波電磁界を発生させてプラズマを発生させ、前記基材の表面を処理する電子デバイスの製造方法であって、
前記基材載置台がなす面に平行な面に沿って前記チャンバを配置し、前記チャンバの内側に第二ガスを供給しながら基材を処理すること、
を特徴とする電子デバイスの製造方法。 - 第一ガスが希ガス、または希ガスを主体とするガスであり、第二ガスが希ガス以外のガスを主体とするガスであることを特徴とする、請求項12記載の電子デバイスの製造方法。
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JP2014098348A JP6043968B2 (ja) | 2013-10-30 | 2014-05-12 | プラズマ処理方法並びに電子デバイスの製造方法 |
US14/340,568 US9627183B2 (en) | 2013-10-30 | 2014-07-25 | Plasma processing device, plasma processing method and method of manufacturing electronic devices |
KR1020140148078A KR20150050445A (ko) | 2013-10-30 | 2014-10-29 | 플라즈마 처리 장치 및 방법, 및 전자 디바이스의 제조 방법 |
US15/454,235 US9673062B1 (en) | 2013-10-30 | 2017-03-09 | Plasma processing method |
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JP2016119313A (ja) * | 2013-10-30 | 2016-06-30 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
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CN106087040B (zh) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | 半导体多晶化系统和对单晶半导体基板进行多晶化的方法 |
CN107093545B (zh) | 2017-06-19 | 2019-05-31 | 北京北方华创微电子装备有限公司 | 反应腔室的下电极机构及反应腔室 |
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US20170178925A1 (en) | 2017-06-22 |
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