JP5921448B2 - 周期的な酸化およびエッチングのための装置と方法 - Google Patents
周期的な酸化およびエッチングのための装置と方法 Download PDFInfo
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- H—ELECTRICITY
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Description
NF3+NH3→NH4F+NH4F・HF+N2
6NH4F+SiO2→(NH4)2SiF6+H2O
(NH4)2SiF6+熱→NH3+HF+SiF4
Claims (8)
- 材料層上で周期的な酸化およびエッチングのプロセスを実行する装置であって、
内部に処理領域を画定する複数の壁を有し、前記処理領域内に材料層を有する基板を保持する基板支持体を含む処理チャンバと、
前記処理チャンバと流体を連通させて、酸素含有ガス、不活性ガス、およびエッチングガスを前記処理チャンバ内へ供給する酸素含有ガス供給手段、不活性ガス供給手段、およびエッチングガス供給手段と、
前記チャンバ内部のプラズマ生成領域内のプラズマならびに前記酸素含有ガスおよびエッチングガスの少なくとも1つを形成して前記ガスを付勢し、前記材料層に接触する酸素プラズマおよびエッチングプラズマの少なくとも1つを形成するプラズマ源と、
前記チャンバ内の前記基板を約100℃を上回る第1の温度まで加熱する加熱システムと、
前記チャンバ内の前記基板を前記第1の温度未満の第2の温度まで冷却する冷却システムと、
前記第1の温度と前記第2の温度との間で前記チャンバ内の前記基板を循環させる制御システムと
を備え、
前記加熱システムが光源を含み、前記光源は、前記光源によって放出される光エネルギーが、処理されている前記材料による吸収を最適化する入射角で前記材料表面に接触するように配置されており、前記入射角は、処理されている前記材料層に対するブルースター角であり、
前記制御システム、前記加熱システム、および前記冷却システムが、約3分未満の期間内に前記第1の温度と第2の温度との間を循環し、前記第2の温度が約200℃〜1000℃の範囲内であり、
前記処理チャンバが、天井を覆って配置されたコイルを含む電力アプリケータを備える天井プラズマ源を有し、前記コイルが、インピーダンス整合ネットワークを通じて電源に結合されて、前記プラズマ生成領域内にプラズマを生成し、
前記チャンバが、前記基板上の材料層上でエッチングプロセスを実行し、前記エッチングプロセスの少なくとも一部分が、前記第1の温度で実行され、
前記基板上に材料層を成形し、前記材料層の所望の形状においては、基部近傍の第1の幅が頂部近傍の第2の幅と実質的に同等であり、前記所望の形状の前記第1の幅および前記第2の幅が約1〜約30ナノメートルである、装置。 - 前記冷却システムが、冷却媒体を流すための通路を含む基板支持体を備えている、請求項1に記載の装置。
- 前記冷却システムが、前記チャンバ内で前記基板支持体に隣接して配置されたシャワーヘッドを備え、前記シャワーヘッドが冷却流体と連通している、請求項1に記載の装置。
- 前記エッチングガスがフッ素含有ガスを含み、前記チャンバが、プラズマ源と連通する窒素ガス源をさらに備えている、請求項1に記載の装置。
- 前記エッチングプロセスが乾式エッチングプロセスを含み、前記エッチングガスが、プラズマ源と連通する窒素ガスおよびフッ素含有ガスを含む、請求項1に記載の装置。
- 前記エッチングガスが、前記プラズマ源と流体を連通させてエッチングプラズマを形成する、請求項1に記載の装置。
- 前記温度制御システムが、約50℃未満、具体的には約25℃〜約35℃の温度で前記エッチングプロセスの少なくとも一部分を実行する冷却システムを含んでいる、請求項1に記載の装置。
- 約3分未満で前記第1の温度と第2の温度との間を循環し、請求項7に記載の装置。
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US12/720,926 US20110061812A1 (en) | 2009-09-11 | 2010-03-10 | Apparatus and Methods for Cyclical Oxidation and Etching |
US12/720,926 | 2010-03-10 | ||
PCT/US2011/027922 WO2011112823A2 (en) | 2010-03-10 | 2011-03-10 | Apparatus and methods for cyclical oxidation and etching |
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JP2013522884A JP2013522884A (ja) | 2013-06-13 |
JP2013522884A5 JP2013522884A5 (ja) | 2014-04-24 |
JP5921448B2 true JP5921448B2 (ja) | 2016-05-24 |
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US (1) | US20110061812A1 (ja) |
JP (1) | JP5921448B2 (ja) |
KR (3) | KR102271735B1 (ja) |
CN (2) | CN106024587B (ja) |
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KR101585214B1 (ko) * | 2009-09-03 | 2016-01-13 | 삼성전자주식회사 | 리세스 형성 방법 및 이를 포함하는 반도체 소자의 형성 방법 |
US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
-
2010
- 2010-03-10 US US12/720,926 patent/US20110061812A1/en not_active Abandoned
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2011
- 2011-03-02 TW TW100106949A patent/TWI517240B/zh not_active IP Right Cessation
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- 2011-03-10 KR KR1020197009737A patent/KR102271735B1/ko active IP Right Grant
- 2011-03-10 JP JP2012557251A patent/JP5921448B2/ja active Active
- 2011-03-10 KR KR1020127026537A patent/KR101832475B1/ko active IP Right Grant
- 2011-03-10 CN CN201610557179.XA patent/CN106024587B/zh active Active
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Also Published As
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TWI517240B (zh) | 2016-01-11 |
CN102792425B (zh) | 2016-08-17 |
CN106024587B (zh) | 2019-09-03 |
JP2013522884A (ja) | 2013-06-13 |
TW201203351A (en) | 2012-01-16 |
KR102271735B1 (ko) | 2021-06-30 |
CN102792425A (zh) | 2012-11-21 |
CN106024587A (zh) | 2016-10-12 |
US20110061812A1 (en) | 2011-03-17 |
KR101832475B1 (ko) | 2018-02-26 |
KR20180021244A (ko) | 2018-02-28 |
KR20190039356A (ko) | 2019-04-10 |
KR20130014552A (ko) | 2013-02-07 |
WO2011112823A3 (en) | 2012-01-05 |
WO2011112823A2 (en) | 2011-09-15 |
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