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- JP2013522884A5 JP2013522884A5 JP2012557251A JP2012557251A JP2013522884A5 JP 2013522884 A5 JP2013522884 A5 JP 2013522884A5 JP 2012557251 A JP2012557251 A JP 2012557251A JP 2012557251 A JP2012557251 A JP 2012557251A JP 2013522884 A5 JP2013522884 A5 JP 2013522884A5
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- 238000005530 etching Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 17
- 210000002381 Plasma Anatomy 0.000 claims description 15
- 238000001816 cooling Methods 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000002826 coolant Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000000737 periodic Effects 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N Pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229920004880 RTP PEK Polymers 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium(0) Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
基板１２０４は、上記で論じたような任意の適した基板とすることができる。いくつかの実施形態では、たとえば論理デバイスの製造では、基板１２０４は、ケイ素（Ｓｉ）または二酸化ケイ素（ＳｉＯ２）を含むことができる。いくつかの実施形態では、たとえばハードマスク構造の製造では、基板１２０４は、ハードマスクによってパターニングすべきケイ素を含まない層１２１０上に堆積させた層１２０８（図１１Ａ〜Ｃに点線で示す）を含むことができる。層１２０８は、Ｓｉを含まない層１２１０をエッチングするときに第２のハードマスクとして機能することができる。層１２０８は、低い温度で堆積させた二酸化ケイ素（ＳｉＯ２）、窒化ケイ素（ＳｉＮ）、酸化アルミニウム（Ａｌ２Ｏ３）、もしくは他の材料、またはシリコンオンインシュレータ（ＳＯＩ）の製造中に形成されて埋設された酸化物の１つまたは複数を含むことができる。ケイ素を含まない層１２１０は、タングステン（Ｗ）、窒化チタン（ＴｉＮ）などの１つまたは複数などの金属、ならびに／あるいはＳｉＯ２、高誘電率の２元酸化物、３元酸化物、相変化材料（酸化ニッケル、テルル化ゲルマニウムアンチモンなど）、ならびに／または第ＩＶ族材料（たとえば、Ｇｅ、ＳｉＧｅ）および／もしくは第ＩＩＩ−Ｖ材料（たとえば、ＧａＡｓ、ＧａＮ、ＩｎＰなど）の代替チャネル材料などの誘電体材料、ならびに／あるいは有機物（たとえば、ペンタセン、フラーレンなど）を含むことができる。一部の材料は、摂氏約１００度を上回る温度で劣化することがあるが、デバイス性能を向上させるように本発明の方法によってアクセス可能になるサブリソグラフィパターニングからの利益を得ることができる。
図２１に示すＲＴＰチャンバ２１００はまた、冷却ブロック２１８０を含み、冷却ブロック２１８０は、頂部２１１２に隣接し、頂部２１１２に結合され、または頂部２１１２内に形成される。通常、冷却ブロック２１８０は、放射熱源２１０６の反対側に隔置される。冷却ブロック２１８０は、入り口２１８１Ａおよび出口２１８１Ｂに結合された１つまたは複数の冷却剤チャネル２１８４を備える。冷却ブロック２１８０は、ステンレス鋼、アルミニウム、ポリマー、またはセラミック材料などの、処理に耐える材料から作ることができる。冷却剤チャネル２１８４は、螺旋形パターン、方形パターン、円形パターン、またはこれらの組合せを構成することができ、チャネル２１８４は、たとえば冷却ブロック２１８０を鋳造すること、および／または２つ以上の部品から冷却ブロック２１８０を製造してこれらの部品を接合することによって、冷却ブロック２１８０内に一体形成することができる。追加または別法として、冷却剤チャネル２１８４は、冷却ブロック２１８０内へドリル加工することができる。
入り口２１８１Ａおよび出口２１８１Ｂは、バルブおよび適した配管によって冷却剤源２１８２に結合することができ、冷却剤源２１８２は、中に配置された流体の圧力および／または流れの制御を容易にするように、システムコントローラ２１２４と連通する。流体は、水、エチレングリコール、窒素（Ｎ２）、ヘリウム（Ｈｅ）、または熱交換媒体として使用される他の流体とすることができる。
材料層に周期的な酸化およびエッチングのプロセスを実行する装置のさらなる実施形態は、内部に処理領域を画定する複数の壁を有し、処理領域内に材料層を有する基板を保持する基板支持体を含む処理チャンバと；処理チャンバと流体を連通させて、酸素含有ガス、不活性ガス、およびエッチングガスを処理チャンバ内へ供給する酸素含有ガス供給、不活性ガス供給、およびエッチングガス供給と；処理チャンバおよびエッチングガスと流体を連通させて、チャンバおよび導管から遠隔でエッチングプラズマを形成し、エッチングプラズマをチャンバ内へ送達する遠隔プラズマ源と；チャンバ内の基板を約１００℃を上回る第１の温度まで加熱する加熱システムと；チャンバ内の基板を第１の温度未満の第２の温度まで冷却する冷却システムと；第１の温度と第２の温度との間でチャンバ内の基板を循環させる制御システムとを備える。
Claims (15)
- 材料層上で周期的な酸化およびエッチングのプロセスを実行する装置であって、
内部に処理領域を画定する複数の壁を有し、前記処理領域内に材料層を有する基板を保持する基板支持体を含む処理チャンバと、
前記処理チャンバと流体を連通させて、酸素含有ガス、不活性ガス、およびエッチングガスを前記処理チャンバ内へ供給する酸素含有ガス供給、不活性ガス供給、およびエッチングガス供給と、
前記チャンバ内部のプラズマ生成領域内のプラズマならびに前記酸素含有ガスおよびエッチングガスの少なくとも１つを形成して前記ガスを付勢し、前記材料層に接触する酸素プラズマおよびエッチングプラズマの少なくとも１つを形成するプラズマ源と、
前記チャンバ内の前記基板を約１００℃を上回る第１の温度まで加熱する加熱システムと、
前記チャンバ内の前記基板を前記第１の温度未満の第２の温度まで冷却する冷却システムと、
前記第１の温度と前記第２の温度との間で前記チャンバ内の前記基板を循環させる制御システムと
を備える装置。 - 前記制御システム、前記加熱システム、および前記冷却システムが、約３分未満の期間内に前記第１の温度と第２の温度との間を循環し、前記第２の温度が約２００℃〜１０００℃の範囲内である、請求項１に記載の装置。
- 前記冷却システムが、冷却媒体を流すための通路を含む基板支持体を備えている、請求項１に記載の装置。
- 前記冷却システムが、前記チャンバ内で前記基板支持体に隣接して配置されたシャワーヘッドを備え、前記シャワーヘッドが冷却流体と連通している、請求項１に記載の装置。
- 前記加熱システムが、光源および抵抗加熱器の少なくとも１つを備えている、請求項４に記載の装置。
- 前記抵抗加熱器が、前記基板支持体または前記シャワーヘッド内に配置されている、請求項５に記載の装置。
- 前記加熱システムが光源を含み、前記光源は、前記光源によって放出される光エネルギーが、処理されている前記材料による吸収を最適化する入射角で前記材料表面に接触するように配置されており、前記入射角が、処理されている前記材料層に対するブルースター角である、請求項１に記載の装置。
- 前記処理チャンバが、天井を覆って配置されたコイルを含む電力アプリケータを備える天井プラズマ源を有し、前記コイルが、インピーダンス整合ネットワークを通じて電源に結合されて、前記プラズマ生成領域内にプラズマを生成する、請求項１に記載の装置。
- 前記エッチングガスがフッ素含有ガスを含み、前記チャンバが、プラズマ源と連通する窒素ガス源をさらに備えている、請求項８に記載の装置。
- 前記チャンバが、前記基板上の材料層上でエッチングプロセスを実行し、前記エッチングプロセスの少なくとも一部分が、前記第１の温度で実行される、請求項２に記載の装置。
- 前記エッチングプロセスが乾式エッチングプロセスを含み、前記エッチングガスが、プラズマ源と連通する窒素ガスおよびフッ素含有ガスを含む、請求項１０に記載の装置。
- 前記エッチングガスが、前記プラズマ源と流体を連通させてエッチングプラズマを形成する、請求項１０に記載の装置。
- 前記温度制御システムが、約５０℃未満、具体的には約２５℃〜約３５℃の温度で前記エッチングプロセスの少なくとも一部分を実行する冷却システムを含んでいる、請求項２に記載の装置。
- 約３分未満で前記第１の温度と第２の温度との間を循環し、請求項１３に記載の装置。
- 前記基板上に材料層を成形し、前記材料層の所望の形状においては、基部近傍の第１の幅が頂部近傍の第２の幅と実質的に同等であり、前記所望の形状の前記第１の幅および前記第２の幅が約１〜約３０ナノメートルである、請求項１に記載の装置。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/720,926 | 2010-03-10 | ||
| US12/720,926 US20110061812A1 (en) | 2009-09-11 | 2010-03-10 | Apparatus and Methods for Cyclical Oxidation and Etching |
| PCT/US2011/027922 WO2011112823A2 (en) | 2010-03-10 | 2011-03-10 | Apparatus and methods for cyclical oxidation and etching |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013522884A JP2013522884A (ja) | 2013-06-13 |
| JP2013522884A5 true JP2013522884A5 (ja) | 2014-04-24 |
| JP5921448B2 JP5921448B2 (ja) | 2016-05-24 |
Family
ID=43729314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012557251A Active JP5921448B2 (ja) | 2010-03-10 | 2011-03-10 | 周期的な酸化およびエッチングのための装置と方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110061812A1 (ja) |
| JP (1) | JP5921448B2 (ja) |
| KR (3) | KR102271735B1 (ja) |
| CN (2) | CN106024587B (ja) |
| TW (1) | TWI517240B (ja) |
| WO (1) | WO2011112823A2 (ja) |
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-
2010
- 2010-03-10 US US12/720,926 patent/US20110061812A1/en not_active Abandoned
-
2011
- 2011-03-02 TW TW100106949A patent/TWI517240B/zh not_active IP Right Cessation
- 2011-03-10 WO PCT/US2011/027922 patent/WO2011112823A2/en active Application Filing
- 2011-03-10 KR KR1020197009737A patent/KR102271735B1/ko active IP Right Grant
- 2011-03-10 KR KR1020127026537A patent/KR101832475B1/ko active IP Right Grant
- 2011-03-10 JP JP2012557251A patent/JP5921448B2/ja active Active
- 2011-03-10 CN CN201610557179.XA patent/CN106024587B/zh active Active
- 2011-03-10 CN CN201180013229.3A patent/CN102792425B/zh not_active Expired - Fee Related
- 2011-03-10 KR KR1020187004991A patent/KR20180021244A/ko active Application Filing
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