CN102822947B - 循环氧化与蚀刻的设备及方法 - Google Patents

循环氧化与蚀刻的设备及方法 Download PDF

Info

Publication number
CN102822947B
CN102822947B CN201180013212.8A CN201180013212A CN102822947B CN 102822947 B CN102822947 B CN 102822947B CN 201180013212 A CN201180013212 A CN 201180013212A CN 102822947 B CN102822947 B CN 102822947B
Authority
CN
China
Prior art keywords
gas
substrate
plasma
oxidation
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180013212.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN102822947A (zh
Inventor
乌陀衍·甘古利
约瑟夫·M·拉内什
阿伦·缪尔·亨特
汤静
克里斯托弗·S·奥尔森
马修·D·科特奈伊-卡斯特
维基·阮
斯瓦米纳坦·斯里尼瓦桑
刘伟
约翰内斯·F·斯温伯格
孙士雨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102822947A publication Critical patent/CN102822947A/zh
Application granted granted Critical
Publication of CN102822947B publication Critical patent/CN102822947B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
CN201180013212.8A 2010-03-10 2011-03-10 循环氧化与蚀刻的设备及方法 Expired - Fee Related CN102822947B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/720,942 US20110065276A1 (en) 2009-09-11 2010-03-10 Apparatus and Methods for Cyclical Oxidation and Etching
US12/720,942 2010-03-10
PCT/US2011/027881 WO2011112802A2 (en) 2010-03-10 2011-03-10 Apparatus and methods for cyclical oxidation and etching

Publications (2)

Publication Number Publication Date
CN102822947A CN102822947A (zh) 2012-12-12
CN102822947B true CN102822947B (zh) 2016-01-06

Family

ID=43730992

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180013212.8A Expired - Fee Related CN102822947B (zh) 2010-03-10 2011-03-10 循环氧化与蚀刻的设备及方法

Country Status (6)

Country Link
US (1) US20110065276A1 (enExample)
JP (1) JP2013522882A (enExample)
KR (1) KR101881474B1 (enExample)
CN (1) CN102822947B (enExample)
TW (1) TWI525683B (enExample)
WO (1) WO2011112802A2 (enExample)

Families Citing this family (189)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070091541A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using feed forward thermal control
JP2008283095A (ja) * 2007-05-14 2008-11-20 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
KR101145334B1 (ko) * 2010-05-31 2012-05-14 에스케이하이닉스 주식회사 반도체 장치 제조방법
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
WO2012145473A1 (en) * 2011-04-21 2012-10-26 Linde Aktiengesellschaft Dry fluorine texturing of crystalline silicon surfaces for enhanced photovoltaic production efficiency
US10049881B2 (en) * 2011-08-10 2018-08-14 Applied Materials, Inc. Method and apparatus for selective nitridation process
CN103208409B (zh) * 2012-01-17 2015-10-28 中国科学院微电子研究所 一种载片台
CN104066521B (zh) * 2012-01-27 2017-07-11 皇家飞利浦有限公司 电容式微机械换能器及制造所述电容式微机械换能器的方法
CN102592985A (zh) * 2012-02-28 2012-07-18 上海华力微电子有限公司 一种氧化硅栅极补偿隔离区刻蚀的方法
JPWO2013183437A1 (ja) * 2012-06-08 2016-01-28 東京エレクトロン株式会社 ガス処理方法
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) * 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9023734B2 (en) * 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9012318B2 (en) 2012-09-21 2015-04-21 Micron Technology, Inc. Etching polysilicon
US20140099794A1 (en) * 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US8980761B2 (en) * 2012-10-03 2015-03-17 Applied Materials, Inc. Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatment
CN104812504B (zh) * 2012-11-20 2018-01-26 皇家飞利浦有限公司 电容性微加工换能器和制造所述电容性微加工换能器的方法
US10316409B2 (en) * 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9093389B2 (en) * 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
TWI683382B (zh) * 2013-03-15 2020-01-21 應用材料股份有限公司 具有光學測量的旋轉氣體分配組件
JP2014212310A (ja) * 2013-04-02 2014-11-13 東京エレクトロン株式会社 半導体デバイスの製造方法及び製造装置
CN103232023B (zh) * 2013-04-22 2016-06-29 西安交通大学 一种基于飞秒激光处理和湿法刻蚀的硅微结构加工方法
CN104276764B (zh) * 2013-07-11 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 玻璃衬底的工艺方法
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
JP6637420B2 (ja) * 2013-08-09 2020-01-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
KR101862632B1 (ko) 2013-09-25 2018-05-31 캐논 아네르바 가부시키가이샤 자기 저항 효과 소자의 제조 방법 및 제조 시스템
US9472416B2 (en) * 2013-10-21 2016-10-18 Applied Materials, Inc. Methods of surface interface engineering
JP6043968B2 (ja) 2013-10-30 2016-12-14 パナソニックＩｐマネジメント株式会社 プラズマ処理方法並びに電子デバイスの製造方法
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
JP6405958B2 (ja) * 2013-12-26 2018-10-17 東京エレクトロン株式会社 エッチング方法、記憶媒体及びエッチング装置
JP5801374B2 (ja) * 2013-12-27 2015-10-28 株式会社日立国際電気 半導体装置の製造方法、プログラム、及び基板処理装置
EP3087587A4 (en) * 2013-12-27 2017-08-02 Intel Corporation Technologies for selectively etching oxide and nitride materials and products formed using the same
US9508578B2 (en) * 2014-02-04 2016-11-29 Globalfoundries Inc. Method and apparatus for detecting foreign material on a chuck
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
CN104979209A (zh) * 2014-04-09 2015-10-14 中芯国际集成电路制造(上海)有限公司 一种FinFET器件的制造方法
CN106463344B (zh) * 2014-05-16 2019-10-11 应用材料公司 喷头设计
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
TWI593015B (zh) 2014-07-10 2017-07-21 東京威力科創股份有限公司 基板之高精度蝕刻方法
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9753463B2 (en) * 2014-09-12 2017-09-05 Applied Materials, Inc. Increasing the gas efficiency for an electrostatic chuck
CN104377107A (zh) * 2014-09-24 2015-02-25 上海华力微电子有限公司 一种用于SiCoNi蚀刻工艺的蚀刻装置
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
KR102299884B1 (ko) * 2014-12-31 2021-09-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102322247B1 (ko) * 2014-12-31 2021-11-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
CN104900471B (zh) * 2015-04-13 2017-04-19 上海华力微电子有限公司 等离子体刻蚀装置及提高硅钴镍刻蚀效率的方法
US9461110B1 (en) * 2015-04-30 2016-10-04 Taiwan Semiconductor Manufacturing Company, Ltd. FETs and methods of forming FETs
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN105023868B (zh) * 2015-06-16 2018-02-27 无锡华瑛微电子技术有限公司 流体传送装置
EP3311398A4 (en) * 2015-06-17 2019-02-20 INTEL Corporation TRANSITION METAL DRYING BY ATOMIC LAYER REMOVAL OF OXIDE LAYERS FOR THE MANUFACTURE OF COMPONENTS
US9922806B2 (en) 2015-06-23 2018-03-20 Tokyo Electron Limited Etching method and plasma processing apparatus
EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
CN106571293A (zh) * 2015-10-09 2017-04-19 北京北方微电子基地设备工艺研究中心有限责任公司 一种硅片刻蚀方法
US10651080B2 (en) 2016-04-26 2020-05-12 Lam Research Corporation Oxidizing treatment of aluminum nitride films in semiconductor device manufacturing
WO2017192994A1 (en) * 2016-05-06 2017-11-09 Applied Materials, Inc. Wafer profiling for etching system
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
CN107435164A (zh) * 2016-05-25 2017-12-05 上海新昇半导体科技有限公司 外延生长设备
US9773662B1 (en) * 2016-06-03 2017-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating a fine structure
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10872760B2 (en) * 2016-07-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and manufacuturing method of semiconductor structure using the same
US9870932B1 (en) * 2016-07-27 2018-01-16 Lam Research Corporation Pressure purge etch method for etching complex 3-D structures
CN106169421A (zh) * 2016-08-26 2016-11-30 振图科技股份有限公司 自动晶圆保护层去除设备
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10049869B2 (en) * 2016-09-30 2018-08-14 Lam Research Corporation Composite dielectric interface layers for interconnect structures
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US9859153B1 (en) 2016-11-14 2018-01-02 Lam Research Corporation Deposition of aluminum oxide etch stop layers
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
CN108573867B (zh) * 2017-03-13 2020-10-16 北京北方华创微电子装备有限公司 硅深孔刻蚀方法
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10050149B1 (en) * 2017-05-18 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure for semiconductor device
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US11380557B2 (en) * 2017-06-05 2022-07-05 Applied Materials, Inc. Apparatus and method for gas delivery in semiconductor process chambers
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
CN107445136B (zh) * 2017-07-05 2019-04-19 中北大学 基于气相tmah的硅刻蚀系统
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10535550B2 (en) * 2017-08-28 2020-01-14 International Business Machines Corporation Protection of low temperature isolation fill
US11164737B2 (en) * 2017-08-30 2021-11-02 Applied Materials, Inc. Integrated epitaxy and preclean system
US10867812B2 (en) 2017-08-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing system and control method
TWI643683B (zh) * 2017-10-19 2018-12-11 Scientech Corporation 流體供應裝置
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US11251047B2 (en) * 2017-11-13 2022-02-15 Applied Materials, Inc. Clog detection in a multi-port fluid delivery system
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
CN111433902A (zh) 2017-12-08 2020-07-17 朗姆研究公司 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有改进的孔图案的集成喷头
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
JP6983103B2 (ja) * 2018-04-23 2021-12-17 東京エレクトロン株式会社 処理装置及び埋め込み方法
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
WO2019226957A1 (en) * 2018-05-24 2019-11-28 Tokyo Electron Limited Multiple zone gas injection for control of gas phase radicals
KR102554014B1 (ko) * 2018-06-15 2023-07-11 삼성전자주식회사 저온 식각 방법 및 플라즈마 식각 장치
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US20200075313A1 (en) * 2018-08-31 2020-03-05 Mattson Technology, Inc. Oxide Removal From Titanium Nitride Surfaces
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
CN118841306A (zh) 2018-12-20 2024-10-25 应用材料公司 用于供应改良的气流至处理腔室的处理空间的方法和设备
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN111696863B (zh) * 2019-03-15 2024-04-12 北京北方华创微电子装备有限公司 硅介质材料刻蚀方法
US11348784B2 (en) * 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
TWI861207B (zh) 2019-09-19 2024-11-11 美商應用材料股份有限公司 使用無滯留區閥的設備與方法
CN110581095B (zh) * 2019-09-27 2021-12-24 中国科学院微电子研究所 一种刻蚀装置及刻蚀方法
CN111326519B (zh) * 2020-03-10 2024-02-02 上海华力微电子有限公司 半导体的形成方法
JP7717717B2 (ja) * 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
CN114497089B (zh) * 2020-11-11 2025-09-12 上海华力微电子有限公司 一种通过sti刻蚀工艺改善hdp填充缺陷的方法
JP7539045B2 (ja) * 2020-12-03 2024-08-23 パナソニックＩｐマネジメント株式会社 プラズマ処理方法
US11955333B2 (en) 2021-03-22 2024-04-09 Applied Materials, Inc. Methods and apparatus for processing a substrate
KR102587031B1 (ko) * 2021-06-01 2023-10-12 충남대학교산학협력단 고종횡비 컨택홀 식각 공정에 적용 가능한 적응형 펄스 공정 장치 및 방법, 이를 구현하기 위한 프로그램이 저장된 기록매체 및 이를 구현하기 위해 매체에 저장된 컴퓨터프로그램
KR102705519B1 (ko) * 2022-02-21 2024-09-11 (주)디바이스이엔지 기판 식각 처리장치
CN117672795A (zh) * 2022-08-31 2024-03-08 江苏鲁汶仪器股份有限公司 等离子体控流装置、等离子刻蚀机及其均一性优化方法
CN116426908B (zh) * 2023-03-20 2025-04-29 上海富乐华半导体科技有限公司 一种湿法氧化工艺用铜片架

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101437981A (zh) * 2004-12-21 2009-05-20 应用材料股份有限公司 用于消除来自化学蒸汽刻蚀腔的副产品沉积的原位腔清洁制程

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535228A (en) * 1982-12-28 1985-08-13 Ushio Denki Kabushiki Kaisha Heater assembly and a heat-treatment method of semiconductor wafer using the same
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
DE69432383D1 (de) * 1993-05-27 2003-05-08 Applied Materials Inc Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
DE4447145B4 (de) * 1994-12-29 2005-06-02 Hilti Ag Verfahren und Einrichtung zur Temperaturüberwachung bei Universalmotoren
JPH08250488A (ja) * 1995-01-13 1996-09-27 Seiko Epson Corp プラズマ処理装置及びその方法
JPH08264510A (ja) * 1995-03-27 1996-10-11 Toshiba Corp シリコン窒化膜のエッチング方法およびエッチング装置
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP4644943B2 (ja) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
KR100756107B1 (ko) * 2001-02-09 2007-09-05 동경 엘렉트론 주식회사 성막 장치
US20030045098A1 (en) * 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
KR100431657B1 (ko) * 2001-09-25 2004-05-17 삼성전자주식회사 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치
JP3586678B2 (ja) * 2002-04-12 2004-11-10 エルピーダメモリ株式会社 エッチング方法
JP2004006575A (ja) * 2002-08-06 2004-01-08 Tokyo Electron Ltd エッチング方法
US7127367B2 (en) * 2003-10-27 2006-10-24 Applied Materials, Inc. Tailored temperature uniformity
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
JP4513329B2 (ja) * 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
JP4701691B2 (ja) * 2004-11-29 2011-06-15 東京エレクトロン株式会社 エッチング方法
KR100628888B1 (ko) * 2004-12-27 2006-09-26 삼성전자주식회사 샤워 헤드 온도 조절 장치 및 이를 갖는 막 형성 장치
JP2006253265A (ja) * 2005-03-09 2006-09-21 Sony Corp 半導体装置の製造方法
US7279721B2 (en) * 2005-04-13 2007-10-09 Applied Materials, Inc. Dual wavelength thermal flux laser anneal
US7399646B2 (en) * 2005-08-23 2008-07-15 International Business Machines Corporation Magnetic devices and techniques for formation thereof
US20070224838A1 (en) * 2006-03-27 2007-09-27 Honeywell International Inc. Method of straining a silicon island for mobility improvement
JP5045000B2 (ja) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
US7732340B2 (en) * 2006-08-08 2010-06-08 Tokyo Electron Limited Method for adjusting a critical dimension in a high aspect ratio feature
JP2008053489A (ja) * 2006-08-25 2008-03-06 Hitachi Kokusai Electric Inc 基板処理装置
US20080078325A1 (en) * 2006-09-29 2008-04-03 Tokyo Electron Limited Processing system containing a hot filament hydrogen radical source for integrated substrate processing
US7572734B2 (en) * 2006-10-27 2009-08-11 Applied Materials, Inc. Etch depth control for dual damascene fabrication process
US7595005B2 (en) * 2006-12-11 2009-09-29 Tokyo Electron Limited Method and apparatus for ashing a substrate using carbon dioxide
JP5229711B2 (ja) * 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
KR100951559B1 (ko) * 2007-01-03 2010-04-09 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
JP2008244224A (ja) * 2007-03-28 2008-10-09 Sumitomo Precision Prod Co Ltd プラズマ処理装置
US8021514B2 (en) * 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
KR100905278B1 (ko) * 2007-07-19 2009-06-29 주식회사 아이피에스 박막증착장치, 박막증착방법 및 반도체 소자의 갭-필 방법
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US8137467B2 (en) * 2007-10-16 2012-03-20 Novellus Systems, Inc. Temperature controlled showerhead
JP5710267B2 (ja) * 2007-12-21 2015-04-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シリコン構造体の製造及びプロファイル制御を伴うシリコンディープエッチング
US8871645B2 (en) * 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101437981A (zh) * 2004-12-21 2009-05-20 应用材料股份有限公司 用于消除来自化学蒸汽刻蚀腔的副产品沉积的原位腔清洁制程

Also Published As

Publication number Publication date
CN102822947A (zh) 2012-12-12
TWI525683B (zh) 2016-03-11
JP2013522882A (ja) 2013-06-13
TW201142935A (en) 2011-12-01
WO2011112802A3 (en) 2012-01-05
US20110065276A1 (en) 2011-03-17
KR101881474B1 (ko) 2018-07-24
KR20130015009A (ko) 2013-02-12
WO2011112802A2 (en) 2011-09-15

Similar Documents

Publication Publication Date Title
CN102822947B (zh) 循环氧化与蚀刻的设备及方法
CN102792426B (zh) 循环氧化与蚀刻的设备及方法
CN102792425B (zh) 循环氧化与蚀刻的设备及方法
TWI557799B (zh) 用於半導體裝置之氧化的方法
CN105556643B (zh) 用于利用循环蚀刻工艺对蚀刻停止层进行蚀刻的方法
US20230377958A1 (en) Cluster processing system for forming a metal containing material
US20150064921A1 (en) Low temperature plasma anneal process for sublimative etch processes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160106

Termination date: 20190310