Classifications

• • H—ELECTRICITY
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/3065—Plasma etching; Reactive-ion etching
  • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
  • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
• • H—ELECTRICITY
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  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
  • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
  • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
  • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
  • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
  • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67115—Apparatus for thermal treatment mainly by radiation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
  • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67242—Apparatus for monitoring, sorting or marking
  • H01L21/67248—Temperature monitoring
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
  • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Definitions

• Oxidation may be achieved by plasma oxidation, rapid thermal oxidation (RTO), radical oxidation, or the like.
• Suitable oxidation chambers may include plasma chambers such as Plasma Immersion Ion Implantation (P3I), or Decoupled Plasma Oxidation (DPO).
• plasma chambers such as Plasma Immersion Ion Implantation (P3I), or Decoupled Plasma Oxidation (DPO).
• thermal oxidation chambers can be used such as RADIANCE ® , VANTAGE ® RADOXTM chambers available from Applied Materials, Inc. of Santa Clara, California, or a furnace including a remote and/or local plasma source.
• the floating gate having an inverted T shape may be formed using a method 400, as depicted in Figure 4.
• the method 400 is illustratively described with reference to Figures 5A-E, which depicts stages of fabrication of the memory device 300 in accordance with the embodiments of the method 400.
• the method 400 includes the deposition of a sacrificial nitride layer, which may be utilized to limit the diffusion of oxygen during an oxidation process used to oxidize the material layer 304. It may be desired to limit oxygen diffusion to prevent undesirable thickening of the tunnel oxide layer 104 and/or to prevent undesirable removal of portions of the tunnel oxide layer 104 and/or the STI region 302 (or the gap fill material) during the oxide layer removal process as described below.
• the material layer 702 may comprise a conductive material, such as polysilicon, a metal or the like.
• the material layer 702 may have a starting shape comprising a substantially rectangular or slightly trapezoidal cross section.
• the material layer 702 may generally have any suitable starting shape such that when oxidized and/or etched by the methods described herein, the material layer 702 may be formed into a floating gate having an inverted T shape.
• the material layer 702 may have a height of greater than about 30 nm, or up to about 130nm.
• the material layer 702 may have a ratio of height to width of greater than about 2: 1.
• FIG. 9 A schematic illustration of saturation in the oxidation rate at high thermal budgets is shown in Figure 9, which generally depicts a plot of an oxide layer thickness as a function of time.
• An isotherm 1000 is representative of an oxidation process where an oxide layer is continuously grown at a desired arbitrary temperature. Initially, over a first period 1002 of time in the isotherm 1000, the oxidation rate is high as illustrated by a first oxide layer thickness 1004 grown over the first period 1002. As time (and thermal budget) increases, the oxidation rate begins to saturate.
• the cyclical oxidation and removal process can be utilized to form structures to critical dimensions that are smaller than those dimensions accessible by lithographic techniques.
• Figures 11A-C depicts the stages of utilizing the cyclical oxidation and removal process to trim a lithographically patterned structure 1200 to a sub-lithographic critical dimension.
• the structure 1200 may be, for example, a partially fabricated logic device, such as a FinFET, or a partially fabricated hard mask structure.
• the substrate support may also have a cooling (or temperature control) system to maintain the substrate support at a predetermined temperature (such as proximate a condensation temperature for the etch process).
• a cooling (or temperature control) system to maintain the substrate support at a predetermined temperature (such as proximate a condensation temperature for the etch process).
• the thermal control system is suitable to rapidly (e.g. , in less than about 1 second, or up to about 10 seconds, or up to about 100 seconds) alter the substrate temperature from about 30 degrees Celsius (to facilitate condensation) to at least about 100 degrees Celsius (to facilitate sublimation).
• the chamber in Figure 13 A also includes means for cooling the substrate.
• the means for cooling can include a showerhead 1450 disposed above the pedestal 1424.
• the showerhead 1450 having a plurality of opens 1451 in communication via channels or conduits (not shown) with a coolant supply 1452.
• Coolant supply can be a suitable gas, for example an inert gas such as nitrogen or a conductive gas such as helium, neon or mixtures thereof.
• the support pedestal 1424 contains a heat exchanger 1462 in the form of cooling passages for a cooling medium, which can be any suitable cooling fluid such, for example a cooling gas such as helium or nitrogen, or a fluid of type described above.
• the heat exchanger 1462 cooling passages include an inlet 1463 and an outlet 1464.
• the heat exchanger 1462 is internally contained with the support pedestal 1424.
• the feedback control system 1454 can operate in either of two modes, namely a cooling mode (in which the heat exchanger 1462 functions as an evaporator) and a heating mode (in which the heat exchanger 1462 functions as a condenser).
• Plasma formation and subsequent oxide layer formation may be performed by introducing the process gases into the chamber 1624 through the gas distribution plate 1612 and applying sufficient source power from the generators 1638 to the reentrant conduits 1626, 1628 to create toroidal plasma currents in the conduits and in the process region 1624.
• the plasma flux proximate the wafer surface is determined by the wafer bias voltage applied by the RF bias power generator 1642.
• the plasma rate or flux (number of ions sampling the wafer surface per square cm per second) is determined by the plasma density, which is controlled by the level of RF power applied by the RF source power generators 1638.
• the cumulative ion dose (ions/square cm) at the wafer 1610 is determined by both the flux and the total time over which the flux is maintained.
• a lamp or laser heating feature of the type described above with respect to Figures 16 and 17 may be utilized to rapidly heat the device being processed.
• the heating and cooling system and other components described with respect to chamber 1800 can be operatively connected to a system controller to control the various system parameters.
• the system controller can control the process to perform a complete process sequence of an oxidation and/or nitridation and an etching step can be completed in the chambers in less than about three minutes.
• the substrate is typically placed into the chamber body 1801 through the slit valve opening 1811 and disposed on the upper surface of the support member 1822.
• the substrate is chucked to the upper surface of the support member 1822, and an edge purge is passed through the channel 1833.
• the substrate may be chucked to the upper surface of the support member 1822 by pulling a vacuum through the holes 1824 and grooves 1827 that are in fluid communication with a vacuum pump via conduit 1825.
• the support member 1822 is then lifted to a processing position within the chamber body 1801, if not already in a processing position.
• the chamber body 1801 may be maintained at a temperature of between 50 °C and 80°C, more preferably at about 65 °C. This temperature of the chamber body 1801 is maintained by passing a heat transfer medium through the fluid channel 1802.
• a purge gas or carrier gas may also be added to the gas mixture.
• Any suitable purge/carrier gas may be used, such as argon, helium, hydrogen, nitrogen, or mixtures thereof, for example.
• the overall gas mixture is from about 0.05% to about 20% by volume of ammonia and nitrogen trifluoride; the remainder being the carrier gas.
• the purge or carrier gas is first introduced into the chamber body 1801 before the reactive gases to stabilize the pressure within the chamber body 1801.
• one non-limiting, exemplary dry etch process in the chamber 1800 may include supplying ammonia or (NH 3 ) or nitrogen trifluoride (NF 3 ) gas, or an anhydrous hydrogen fluoride (HF) gas mixture with a remote plasma into the plasma volume 1849, which condenses on Si0 2 at low temperatures (e.g. , ⁇ 30°C) and reacts to form a compound which is subsequently sublimated in the chamber 1800 at moderate temperature (e.g. , >100°C) to etch Si0 2 .
• the sublimation completes the etching of the material surface, and the byproducts can be removed by vacuum pump 1804. It is desirable to keep the chamber walls at a temperature between the temperature of the substrate support and the gas distribution plate to prevent etchant and byproduct condensation on the walls of the chamber 1800.
• oxidizing gas supply 1890 flows oxidizing gas directly into the chamber via inlet 1892.
• a suitable oxidizing gas can include one or more of oxygen, ozone, H 2 0, H 2 0 2 , or a nitrogen oxide specie such as N 2 0, NO or N0 2 .
• the oxidizing gas is introduced into the chamber at a suitably low pressure.
• the chamber is then heated to an appropriate temperature so that an oxide layer grows on the material surface.
• the chamber temperature is heated in the range of about 200° C to about 800° C.
• the chamber is heated in the range of about 300° C to about 400° C.
• an oxidizing gas for example, oxygen or one of the other oxidizing gases, can be introduced through the cooled support member 1822 through gas channels in the support member to reduce premature decomposition of the oxidizing gas before it contacts the material surface onto which the oxide layer is to be formed.
• the oxidizing gas supply 1890 may be in fluid communication with the plasma volume 1849 via a gas inlet (not shown), and an oxide layer can be formed on the material surface of the substrate introduction of an oxygen plasma.
• an oxidizing plasma can be formed in a remote plasma oxidation source in fluid communication with the chamber 1800, similar to the arrangement shown in Figure 13.
• a remote nitridation plasma can also be formed by supplying nitrogen to a remote plasma source.
• the substrate support 1822 can be biased with a radio frequency (RF) power source similar to the arrangement shown in Figure 15.
• RF radio frequency
• the substrate support 2104 is optionally adapted to magnetically levitate and rotate within the interior volume 2120.
• the substrate support 2104 shown is capable of rotating while raising and lowering vertically during processing, and may also be raised or lowered without rotation before, during, or after processing. This magnetic levitation and/or magnetic rotation prevents or minimizes particle generation due to the absence or reduction of moving parts typically required to raise/lower and/or rotate the substrate support.
• the chamber 2100 also includes a window 2114 made from a material transparent to heat and light of various wavelengths, which may include light in the infra-red (IR) spectrum, through which photons from the radiant heat source 2106 may heat the substrate 2140.
• IR infra-red
• the one or more sensors 2116 are coupled to the controller 2124 that receives the output metric from the sensors 2116 and provides a signal or signals to the one or more actuator assemblies 2122 to raise or lower at least a portion of the substrate support 2104.
• the controller 2124 may utilize a positional metric obtained from the sensors 2116 to adjust the elevation of the stator 2118 at each actuator assembly 2122 so that both the elevation and the planarity of the substrate support 2104 and substrate 2140 seated thereon may be adjusted relative to and a central axis of the RTP chamber 2100 and/or the radiant heat source 2106.
• the controller 2124 may provide signals to raise the substrate support by action of one actuator 2122 to correct axial misalignment of the substrate support 2104, or the controller may provide a signal to all actuators 2122 to facilitate simultaneous vertical movement of the substrate support 2104.
• FIG. 22 Further details on the reflector plate 2200 are shown in Figure 22.
• a reflector plate 2200 incorporating gas distribution outlets to distribute gas evenly over a substrate to allow rapid and controlled heating and cooling of the substrate is shown.
• the plate 2200 includes a top portion 2201 having a gas introduction system 2202, includes a first gas introduction port 204 and an optional second gas introduction port 2206 in communication with a gas mixing chamber 2208 for mixing gases the two gases. If only a single gas introduction port is provided, mixing chamber 2208 can be eliminated from the design. It will be understood that additional gas introduction ports can be provided as well.
• the gas introduction ports 2202, 2204 would of course be connected to a suitable gas source such as a tank of gas or gas supply system (not shown).
• the substrate and material surface is maintained at a relatively low temperature, for example, in the range of about 20° C to about 60° C, less than about 50° C, specifically, less than about 45 ° C, less than about 40 ° C, or less than about 35 ° C.
• the temperature is maintained at about 30 ° C +/- about 5 ° C to aid in condensing the etchant and control selectivity of the etching reaction.
• the temperature of the substrate and material surface can be maintained at a low temperature by flowing appropriate cooling gases, for example, helium through the plate 2200. Removal of the film or oxide layer by etching can further include using one or both of the lift pins 2144 and/or the stator assembly 2118 magnetically coupled to the substrate support 2104 to move the substrate being processed closer to the plate 2200.
• the chamber 2100 can be purged again to remove the oxidizing gas and byproducts of the oxidation reaction(s). Purging can be achieved by flowing an inert gas into the chamber and/or with the atmosphere control system 2164.
• the steps of formation of an oxide layer, etching (by plasma and sublimation) can be repeated cyclically within chamber 2100 until an oxide layer have a desired material thickness has been formed. Exemplary devices and process sequences are described above with respect to Figures 3A-3C, 5A-5E, 7A-7D, 8A-8B, 10A-10D or 11A-11C, and any of these processes can be performed in the single chamber 2100 described above.

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• Engineering & Computer Science (AREA)
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• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
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• Toxicology (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Non-Volatile Memory (AREA)
• Semiconductor Memories (AREA)
• Formation Of Insulating Films (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
• Electrodes Of Semiconductors (AREA)
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• 2010
  • 2010-03-10 US US12/720,942 patent/US20110065276A1/en not_active Abandoned
• 2011
  • 2011-03-02 TW TW100106945A patent/TWI525683B/zh not_active IP Right Cessation
  • 2011-03-10 CN CN201180013212.8A patent/CN102822947B/zh not_active Expired - Fee Related
  • 2011-03-10 WO PCT/US2011/027881 patent/WO2011112802A2/en not_active Ceased
  • 2011-03-10 KR KR1020127026519A patent/KR101881474B1/ko active Active
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