JP2013522882A - 周期的な酸化およびエッチングのための装置と方法 - Google Patents
周期的な酸化およびエッチングのための装置と方法 Download PDFInfo
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Classifications
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
NF3+NH3→NH4F+NH4F・HF+N2
6NH4F+SiO2→(NH4)2SiF6+H2O
(NH4)2SiF6+熱→NH3+HF+SiF4
Claims (15)
- 基板を処理する装置であって、
基板を支持する基板支持体が中に配置された処理チャンバと、
前記基板支持体上に支持された基板の温度を約100℃未満の第1の温度に制御する温度制御システムと、
前記チャンバと流体を連通させて、少なくとも酸素含有ガス、不活性ガス、およびエッチングガスを前記処理チャンバ内へ送達するガス源と、
前記処理チャンバと流体を連通させて、前記酸素含有ガスおよび前記エッチングガスの少なくとも1つを付勢して、酸化プラズマおよびエッチングプラズマの少なくとも1つを形成するプラズマ源と、
前記基板を前記第1の温度を上回る第2の温度まで加熱する熱源と
を備える装置。 - 前記チャンバは、前記基板の前記温度が前記第1の温度であるとき、前記エッチングガスおよび前記エッチングプラズマの1つを前記処理チャンバへ送達し、前記基板の前記温度が前記第2の温度であるとき、前記酸化ガスおよび酸化プラズマの1つを送達するように構成されており、前記第2の温度が約200℃〜1000℃の範囲内である、請求項1に記載の装置。
- 前記チャンバが、前記基板上の材料層にエッチングプロセスを実行するように構成されており、前記エッチングプロセスの少なくとも一部分が前記第1の温度で実行される、請求項2に記載の装置。
- 前記エッチングプロセスが乾式エッチングプロセスを含み、前記エッチングガスがフッ素含有ガスを含み、前記フッ素含有ガスが前記プラズマ源と流体を連通させてエッチングプラズマを形成し、前記ガス源が、プラズマ源と連通する窒素ガスをさらに含んでいる、請求項3に記載の装置。
- 前記温度制御システムが、約50℃を下回る温度で前記エッチングプロセスの少なくとも一部分を実行する冷却システムを含み、前記装置が、約3分未満で前記第1の温度と第2の温度との間を循環し、前記材料層にエッチングプロセスおよび酸化プロセスを周期的に実行するように構成されており、前記冷却システムが、前記基板の前記温度を約25℃〜約35℃の範囲内の温度まで低下させるように構成されている、請求項3に記載の装置。
- 前記装置が、前記基板上に材料層を成形するように構成されており、前記材料層の所望の形状が、前記所望の形状の基部近傍の第1の幅が前記所望の形状の頂部近傍の第2の幅と実質的に同等の形状であり、前記所望の形状の前記第1の幅および前記第2の幅が、約1〜約30ナノメートルである、請求項1に記載の装置。
- 前記酸化プロセスが、急速熱酸化、ラジカル酸化、プラズマ酸化、化学酸化、または光化学酸化を含み、前記エッチングプロセスが、湿式もしくは乾式化学エッチング、反応性イオンエッチング、およびプラズマエッチングの少なくとも1つを含む、請求項1に記載の装置。
- 基板上に材料層を成形する方法であって、
(a)処理チャンバ内で材料層の表面を処理して酸化物または窒化物含有層を形成するステップと、
(b)前記酸化物または窒化物含有層の形成を終了するステップと、
(c)(a)と同じ処理チャンバ内でエッチングプロセスによって前記酸化物または窒化物含有層の少なくとも一部を除去するステップと、
(d)前記材料層が所望の形状に形成されるまで、前記同じ処理チャンバ内で(a)から(c)を繰り返すステップと
を含む方法。 - 前記材料層を酸化させて前記酸化物層を形成するステップが、湿式もしくは乾式急速熱酸化、ラジカル酸化、プラズマ酸化、湿式もしくは乾式化学酸化、および光化学酸化の少なくとも1つによって実行され、前記エッチングプロセスが、湿式もしくは乾式化学エッチング、反応性イオンエッチング、およびプラズマエッチングの少なくとも1つを含む、請求項8に記載の方法。
- 前記材料層が前記所望の形状に形成され、前記所望の形状の基部近傍の第1の幅が、前記所望の形状の頂部近傍の第2の幅と実質的に同等であり、前記所望の形状のアスペクト比が、約0.5〜約20であり、前記所望の形状の前記第1の幅および前記第2の幅が、約1〜約30ナノメートルである、請求項8に記載の方法。
- 材料層に周期的な酸化およびエッチングのプロセスを実行する装置であって、
内部に処理領域を画定する複数の壁を有し、前記処理領域内に材料層を有する基板を保持する基板支持体を含む処理チャンバと、
前記処理チャンバと流体を連通させて、酸素含有ガス、不活性ガス、およびエッチングガスを前記処理チャンバ内へ供給する酸素含有ガス供給、不活性ガス供給、およびエッチングガス供給と、
前記処理チャンバおよび前記エッチングガスと流体を連通させて、前記チャンバから遠隔でエッチングプラズマを形成し、導管と流体を連通させて、前記エッチングプラズマを前記チャンバ内へ送達する遠隔プラズマ源と、
前記チャンバ内の前記基板を、約100℃を上回る第1の温度まで加熱する加熱システムと、
前記チャンバ内の前記基板を前記第1の温度未満の第2の温度まで冷却する冷却システムと、
前記第1の温度と前記第2の温度との間で前記チャンバ内の前記基板を循環させる制御システムと
を備える装置。 - 実質的に熱酸化のみによって酸化プロセスを行うように構成されている、請求項11に記載の装置。
- 前記装置が、急速熱酸化プロセスによって酸化を行うように構成されており、前記加熱システムが、放射熱源およびリフレクタプレートを備える急速熱処理チャンバを備えており、前記基板支持体が、前記リフレクタプレートと前記放射熱源との間に配置されており、前記遠隔プラズマ源が、フッ素含有ガスを含むエッチングガスと流体を連通させている、請求項11に記載の装置。
- 前記チャンバが、エッチングプラズマ生成物を前記チャンバ内へ送達する少なくとも1つの細長いランスを含んでいる、請求項13に記載の装置。
- 前記冷却システムが、基板全体にわたってガスを均等に分散させて前記基板の制御された急速な加熱および冷却を可能にするガス分配出口を組み込んだリフレクタプレートを備えている、請求項13に記載の装置。
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JP2015531547A (ja) * | 2012-09-18 | 2015-11-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ラジカル構成要素の酸化物エッチング |
JP2016503243A (ja) * | 2013-01-16 | 2016-02-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 窒化ケイ素誘電体膜をパターニングする方法 |
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JP2016027594A (ja) * | 2014-07-01 | 2016-02-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
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JP2020532142A (ja) * | 2017-08-30 | 2020-11-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 一体化されたエピタキシと予洗浄システム |
JP7029522B2 (ja) | 2017-08-30 | 2022-03-03 | アプライド マテリアルズ インコーポレイテッド | 一体化されたエピタキシと予洗浄システム |
Also Published As
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KR20130015009A (ko) | 2013-02-12 |
TWI525683B (zh) | 2016-03-11 |
TW201142935A (en) | 2011-12-01 |
WO2011112802A3 (en) | 2012-01-05 |
CN102822947A (zh) | 2012-12-12 |
WO2011112802A2 (en) | 2011-09-15 |
KR101881474B1 (ko) | 2018-07-24 |
US20110065276A1 (en) | 2011-03-17 |
CN102822947B (zh) | 2016-01-06 |
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