JP7029522B2 - 一体化されたエピタキシと予洗浄システム - Google Patents
一体化されたエピタキシと予洗浄システム Download PDFInfo
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- JP7029522B2 JP7029522B2 JP2020512543A JP2020512543A JP7029522B2 JP 7029522 B2 JP7029522 B2 JP 7029522B2 JP 2020512543 A JP2020512543 A JP 2020512543A JP 2020512543 A JP2020512543 A JP 2020512543A JP 7029522 B2 JP7029522 B2 JP 7029522B2
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- 238000000407 epitaxy Methods 0.000 title claims description 11
- 238000004140 cleaning Methods 0.000 title description 52
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- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
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- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
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- 239000012780 transparent material Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/0209—Pretreatment of the material to be coated by heating
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/52—Controlling or regulating the coating process
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Description
Claims (14)
- 少なくとも1つの膜形成チャンバに結合された移送チャンバと、
前記移送チャンバに結合されたプラズマ酸化物除去チャンバであって、
混合チャンバに流体結合されている円錐形チャンバと、前記混合チャンバに流体結合されている中心導管と、前記混合チャンバに流体結合されている円筒形導管と、前記混合チャンバに流体結合されている2つの入口とを含む、リッドアセンブリ、
遠隔プラズマ源、ならびに
冷却チャネルおよび加熱器を含む基板支持体を備える、プラズマ酸化物除去チャンバと、
前記移送チャンバに結合されたロードロックチャンバと
を備える、処理システム。 - 前記プラズマ酸化物除去チャンバがRF遠隔プラズマチャンバである、請求項1に記載の処理システム。
- 前記膜形成チャンバがエピタキシチャンバである、請求項1に記載の処理システム。
- 前記プラズマ酸化物除去チャンバがフッ素処理チャンバであり、前記膜形成チャンバがエピタキシチャンバである、請求項1に記載の処理システム。
- 前記基板支持体中の前記加熱器がゾーン化抵抗加熱器である、請求項4に記載の処理システム。
- アニールチャンバをさらに備える、請求項5に記載の処理システム。
- 前記混合チャンバが1つの側面で、開口が形成されているガス分配プレートと境界を接している、請求項1に記載の処理システム。
- 少なくとも1つの気相エピタキシチャンバに結合された第1の移送チャンバと、
前記第1の移送チャンバに結合されたプラズマ酸化物除去チャンバとを備える処理装置であって、前記プラズマ酸化物除去チャンバが、
円錐形チャンバ、混合チャンバおよびガス分配器を有するリッドアセンブリと、
前記リッドアセンブリの一部分を貫通して形成され、前記混合チャンバと流体連結している第1のガス入口と、
前記リッドアセンブリの一部分を貫通して形成され、前記混合チャンバと流体連結している第2のガス入口と、
前記リッドアセンブリの一部分を貫通して形成され、前記混合チャンバと流体連結している第3のガス入口と、
基板支持体であって、
基板支持面、
前記基板支持体に埋め込まれた冷却チャネルおよび1つまたは複数の抵抗加熱器、ならびに
前記基板支持面の凹部に配置され、前記基板支持体を介してリフトアクチュエータに結合されたリフト部材を有する、基板支持体とを含み、前記処理装置がさらに
前記第1の移送チャンバに結合されたロードロックチャンバを備える、処理装置。 - 1つまたは複数の通過ステーションによって前記第1の移送チャンバに結合された第2の移送チャンバをさらに備え、前記プラズマ酸化物除去チャンバが前記1つまたは複数の通過ステーションの間に置かれる、請求項8に記載の処理装置。
- 前記第1または第2の移送チャンバに結合された熱処理チャンバをさらに備える、請求項9に記載の処理装置。
- 前記プラズマ酸化物除去チャンバがRF遠隔プラズマチャンバである、請求項8に記載の処理装置。
- 前記第1の移送チャンバに結合された膜形成チャンバをさらに備える、請求項8に記載の処理装置。
- 前記膜形成チャンバがエピタキシチャンバである、請求項12に記載の処理装置。
- 前記プラズマ酸化物除去チャンバがフッ素処理チャンバであり、前記膜形成チャンバがエピタキシチャンバである、請求項12に記載の処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2022023955A JP7348975B2 (ja) | 2017-08-30 | 2022-02-18 | 一体化されたエピタキシと予洗浄システム |
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CN113192869B (zh) * | 2021-04-29 | 2024-07-23 | 北京北方华创微电子装备有限公司 | 进气机构和半导体工艺设备 |
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