CN111052334B - 集成外延与预清洁系统 - Google Patents

集成外延与预清洁系统 Download PDF

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CN111052334B
CN111052334B CN201880056028.3A CN201880056028A CN111052334B CN 111052334 B CN111052334 B CN 111052334B CN 201880056028 A CN201880056028 A CN 201880056028A CN 111052334 B CN111052334 B CN 111052334B
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chamber
substrate
gas
coupled
processing
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CN111052334A (zh
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劳拉·哈夫雷查克
舒伯特·S·楚
图沙尔·曼德雷卡尔
埃罗尔·C·桑切斯
劳建邦
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Applied Materials Inc
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Applied Materials Inc
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

本申请案的实施方式大体上涉及耦接到至少一个气相外延腔室的转移腔室及耦接至转移腔室的等离子体氧化物移除腔室，等离子体氧化物移除腔室包括具有混合腔室及气体分配器的盖组件；穿过盖组件的一部分形成并与混合腔室流体连通的第一气体入口；穿过盖组件的一部分形成并与混合腔室流体连通的第二气体入口；穿过盖组件的一部分形成并与混合腔室流体连通的第三气体入口；及具有基板支撑表面的基板支撑件；升降构件，所述升降构件设置在基板支撑表面的凹槽中且经由基板支撑件耦接至升降致动器；及耦接至传送腔室的装载锁定腔室。

Description

集成外延与预清洁系统
技术领域
本申请案的实施方式大体上与用于清洁基板表面的设备及方法相关。
背景技术
集成电路形成在硅及其他半导体基板中及上。在单晶硅的情况下，通过从熔融硅浴中生长晶锭、接着将经固化的晶锭锯成多个基板来制造基板。接着可在单晶硅基板上形成外延硅层，以形成可掺杂或未掺杂的无缺陷硅层。如晶体管的半导体装置可由外延硅层制造。所形成的外延硅层的电特性通常优于单晶硅基板的电特性。
当暴露于典型的基板制造设施周围条件时，单晶硅及外延硅层的表面易受污染。例如，由于处理基板及/或暴露于基板处理设施中的周围环境，故在沉积外延层之前可在单晶硅表面上形成自然氧化物层。另外，存在于周围环境中的外来污染物(如碳及氧物质)可沉积在单晶表面上。在单晶硅表面上存在自然氧化物层或污染物会对随后在单晶表面上所形成的外延层的质量产生负面影响。因此，希望预先清洁基板，以便在外延层在基板上生长之前移除表面氧化及其他污染物。然而，预清洁处理通常在一或多个独立的真空处理腔室中进行，这可能增加基板处理时间及将基板暴露于周围环境的机会。
因此，本领域需要提供一种改进的用于在执行外延沉积处理之前清洁基板表面的基板处理系统，所述基板处理系统最小化了基板处理时间及对周围环境的暴露。
发明内容
本申请案描述了一种处理系统，所述处理系统包括耦接到至少一个膜形成腔室的传送腔室；耦接至所述传送腔室的等离子体氧化物移除腔室，所述等离子体氧化物移除腔室包括远程等离子体源及基板支撑件，所述基板支撑件包括冷却通道及加热器；及连接到所述传送腔室的装载锁定腔室。
本文亦描述了一种处理基板的方法，所述方法包括以下步骤：通过包括将基板暴露于包含NH3、HF及自由基的处理气体的处理来自基板移除氧化物；通过气相外延处理在基板上形成膜。
本文亦描述了一种处理设备，所述处理设备包括耦接到至少一个气相外延腔室的第一传送腔室；耦接到传送腔室的等离子体氧化物移除腔室，所述等离子体氧化物移除腔室包括具有混合腔室及气体分配器的盖组件；第一气体入口，所述第一气体入口穿过盖组件的一部分形成并与混合腔室流体连通；第二气体入口，所述第二气体入口穿过盖组件的一部分形成并与混合腔室流体连通；第三气体入口，所述第三气体入口穿过盖组件的一部分形成并与混合腔室流体连通；及具有基板支撑表面的基板支撑件；冷却通道及一或多个嵌入基板支撑件中的电阻式加热器；升降构件，所述升降构件设置在基板支撑表面的凹槽中且经由基板支撑件耦接到升降致动器；及耦接到传送腔室的装载锁定腔室。
附图说明
通过参考附图中所描绘的本申请案的说明性实施方式，可理解上文所简要概述且在下文更详细论述的本申请案的实施方式。然而，应注意到的是，附图仅示出了本申请案的典型实施方式，因此附图不应视为限制本申请案的范围，因本申请案可允许其他同等有效的实施方式。
图1示出了根据本申请案的一个实施方式的处理列。
图2A为根据本申请案的一个实施方式的用于执行图1的清洁处理的清洁腔室的横截面视图。
图2B为图2A的处理腔室的一部分的放大视图。
图2C为根据一个实施方式的基板支撑件的放大横截面视图。
图3示出了用于执行外延沉积处理的单个基板化学气相沉积(CVD)反应器。
图4示出了用于执行外延沉积处理的背面热处理腔室的示意性截面视图。
图5为用于执行外延沉积处理的CVD腔室的示意性截面视图。
图6示出了用于执行如本文所述的清洁及沉积处理的示例性真空处理系统。
为了便于理解，尽可能使用相同的元件符号来表示图中共有的相同元件。未按比例绘制图式，且为了清楚起见可简化图。可预期到一种实施方式的元素及特征可有利地并入其他实施方式中而无需进一步叙述。
具体实施方式
图1示出了根据本申请案的一个实施方式的处理列100。在方块102中，使用清洁处理自半导体基板的表面移除氧化物。基板可包括含硅材料，及表面可包括如硅(Si)、锗(Ge)或硅锗合金(SiGe)的材料。在一些实施方案中，Si、Ge或SiGe表面可具有氧化物层，如天然氧化物层及设置在Si、Ge或SiGe表面上的污染物。由于外延沉积处理对氧化物及污染物(如含碳污染物)的敏感性，故暴露于大多数典型洁净室环境几小时所产生的表面污染物可能变得足够大而使累积的氧化物及污染物影响随后形成的外延层的质量。
可通过执行氧化物移除处理及污染物移除处理来清洁基板表面。在一种实施方式中，使用清洁处理从基板表面移除氧化物(方块102)，及(例如)使用还原处理从基板表面移除污染物(如含碳污染物)。清洁处理可包括等离子体处理。等离子体处理可使用由包括氢气(H2)、氦气(He)、氩气(Ar)、氨气(NH3)及含氟气体(如NF3、HF或所述气体的任何组合)的气体形成的等离子体。等离子体可为电感耦接或电容耦接的，或等离子体可由处理腔室中的微波源形成。处理腔室可为远程等离子体腔室，所述远程等离子体腔室在空间上与设置基板的处理区域分离。本文所描述的术语“空间上分离”可指通过一或多个腔室组件(如图2A中所示的阻挡板228及气体分配器230，或甚至是远程等离子体腔室及基板处理腔室之间的导管)而与基板处理区域分离的等离子体形成区域。
在一个实施方式中，使用电容耦接等离子体源来形成等离子体。来自等离子体的自由基可穿过设置在基板上方的气体分配板，所述气体分配板在温度为约5摄氏度至约100摄氏度(如约5摄氏度至约75摄氏度的温度；例如约10摄氏度)处位于支撑件上。处理压力可低于大气压力(例如约500mTott至约20Torr之间的压力，如约2Torr至约10Torr之间的压力)。自由基到达基板接着与表面氧化物反应。可适于执行等离子体蚀刻处理的示例性处理腔室包括可从加州圣克拉拉市的应用材料公司获得的SiCoNiTM或SelectraTM腔室。亦可使用其他制造商的腔室。
在一个示例性实施方式中，等离子体清洁处理为远程等离子体辅助干洗处理，所述处理涉及同时将基板暴露于HF及NH3，可选地包括一或多种气体的等离子体副产物。亦可使用惰性气体(如氩气及氦气)。如上所述，惰性/HF/NH3中的任何一种或三种气体的组合可暴露于能量以在其中形成等离子体。等离子体与其他气体混合以充电到处理腔室，或可沿着不同的路径将等离子体及其他气体提供给处理腔室并在到达处理腔室时混合。在一个范例中，等离子体清洁处理可类似于或可包括可从加州圣克拉拉市的应用材料公司获得的SiCoNiTM处理。
远程等离子体处理可在很大程度上保形且对氧化物层具有选择性；因此无论层是无定形的、结晶的还是多晶的，都不容易蚀刻硅、锗或氮化物层。氧化物相对硅或锗的HF/NH3等离子体清洁处理的选择性至少约为3：1，通常为5：1或更好，有时为10：1。HF/NH3等离子体清洁处理对氧化物与氮化物的选择性也很高。HF/NH3等离子体清洁处理相对于氮化物的选择性至少约为3：1，通常为5：1或更好，有时为10：1。
在一些实施方式中，在远程等离子体处理期间或在执行远程等离子体处理之后，可将一定量的热能施加到处理过的基板上以帮助移除任何产生的副产物。在一些实施方式中，经由使得在基板表面上所发现的不需要的副产物升华的辐射、对流及/或传导传热过程来提供热能。
在可选的方块103中，可通过从基板表面移除碳污染物来执行第二清洁处理。在方块106中，在基板的表面上形成外延层。若先前如上所述地清洁，则基板表面被均匀地氧化且无污染，这改善了随后在基板表面上形成的层的质量。示例性的外延处理可为在小于约800摄氏度(例如约450至650摄氏度)的温度下执行的选择性外延处理。可使用高温化学气相沉积(CVD)处理来形成外延层。外延层可为结晶硅、锗或硅锗，或任何合适的半导体材料(如III-V族化合物或II-VI族化合物)。在一个示例性热CVD处理中，如氯硅烷SiHxCl4-x(单、二、三、四)、硅烷SixH2X+2(硅烷、乙硅烷及丙硅烷等)、锗烷GexH2x+2(锗烷及二锗烷等)、氯化氢(HCl)、氯气Cl2或上述组合的处理气体用于形成外延层。处理温度低于800摄氏度(如约300摄氏度至约600摄氏度，例如约450摄氏度)，且处理压力在5Torr至600Torr之间。可用于执行外延沉积处理的示例性处理腔室为CenturaTM Epi腔室，所述CenturaTM Epi腔室可从加州圣克拉拉市的应用材料公司获得。亦可使用其他制造商的腔室。
可在一个处理系统(如图6中所示的处理系统)中执行方块102、103及106，并在下文进一步描述方块102、103及106。在执行106的层形成处理之前，亦可在处理102及103之间或之后进行任选的热处理，以移除任何残留的副产物或污染物，并使表面退火以移除任何表面缺陷。此种退火可在可选地包括惰性气体(如氩气及氦气)的氢气氛下执行，且可在400至800摄氏度的温度及1托至300托的压力下执行。
图2A为处理腔室200的横截面视图，所述处理腔室200经调适以执行方块102中所发现的至少一些处理，且因此被配置成从基板的表面移除污染物(如氧化物)。图2B为图2A的处理腔室200的一部分的放大视图。
处理腔室200可特别用于执行基于热或等离子体的清洁处理及/或等离子体辅助的干蚀刻处理。处理腔室200包括腔室主体212、盖组件214及支撑组件216。盖组件214经设置在腔室主体212的上端，且支撑组件216至少部分地设置在腔室主里212内。可使用真空系统来从处理腔室200中移除气体。真空系统包括真空泵218，所述真空泵耦接到设置在腔室主体212中的真空端口221。处理腔室200亦包括用于控制处理腔室200内的处理的控制器202。
盖组件214包括多个堆叠部件，所述多个堆叠部件经配置成将前驱物气体及/或等离子体提供给腔室200内的处理区域222。第一板220耦接到第二板240。第三板244耦接到第二板240。盖组件214可连接到用于将等离子体供应至形成在盖组件214中的锥形腔室242的电源224。盖组件214亦可连接到远程等离子体源，所述远程等离子体源在盖堆叠的上游产生等离子体。远程等离子体腔(例如，图2A至2B中的项目222、220及240)经耦接到气体源252(或在没有远程等离子体源224的情况下，气源252直接耦接到盖组件214)。气源252可包括经配置成提供氦气、氩气或其他惰性气体的气源。在一些配置中，由气源252提供的气体可被激发成通过使用远程等离子体源224提供给盖组件214的等离子体。在替代实施方式中，气源252可提供可在被引入设置在处理腔室200内的基板表面之前由远程等离子体源224激发的处理气体。参见图2B，锥形腔室242具有开口246，所述开口246允许形成的等离子体从远程等离子体源224流出至形成在盖组件214的第四板250中的容积248。
在盖组件214的一些配置中，通过施加从等离子体源传递的能量在锥形腔室242内产生等离子体。在一个实例中，可通过偏置盖组件214来提供能量，以将RF、VHF及/或UHF能量电容耦接到位于锥形腔室242中的气体。在盖组件214的此种配置中，可不使用盖组件214内的远程等离子体源224，或不安装远程等离子体源224于盖组件214内。
形成在第四板250中的中央导管270经调适以将从容积248通过第五板254提供的等离子体产生的物质提供到形成在盖组件214的第六板268中的混合腔室266。中央导管270通过第五板254中的开口264与混合腔室266连通。开口264的直径可小于、大于或等于中央导管270的直径。在图2B所示的实施方式中，开口264的直径与中央导管270的直径相同。
第四板250亦包括多个入口256及258，所述多个入口256及258经配置成向混合腔室266提供气体。入口256耦接到第一气源260，及入口258耦接到第二气源262。第一气源260及第二气源262可包括处理气体及惰性气体，(例如)作为载气的惰性气体，如氩气及/或氦气。第一气源260可包括氨(NH3)及氩气。第二气源262可包含含氟气体、含氢气体或上述气体的组合。在一个实例中，第二气源262可包含氟化氢(HF)及氩气。
如图2B所示，在一些配置中，入口256通过圆柱形通道259(以虚线示出)及形成在板254中的多个孔265而耦接到混合腔室266。入口258通过圆柱形通道257(以虚线示出)及形成在第五板254中的多个孔267而耦接到混合腔室266。形成在板254中的孔265及267的尺寸通常设计成使得它们能够均匀地流动从它们各自的气源260及262提供至混合腔室266的气体。在一种配置中，孔267的直径小于由形成在第四板250中的圆柱形通道257的相对侧壁所限定的开口的宽度。孔267通常围绕圆柱形通道257的中心线的圆周分布，以提供均匀流体流入至混合腔室266中。在一种配置中，孔265的直径小于由形成在第四板250中的圆柱形通道259的相对侧壁所限定的开口的宽度。孔265通常围绕圆柱形通道259的中心线的圆周分布，以提供均匀的流体流流入至混合腔室266中。
入口256及258提供横向穿过第四板250、朝向并穿过第五板254到达混合腔室266之相应的流体流动路径。盖组件214亦包括第七板或第一气体分配器272，所述第七板或第一气体分配器272可为气体分配板，如在盖组件214中所混合的各种气体流过形成在喷头中的穿孔274的喷头。穿孔274与混合室266流体连通，以提供从混合腔室266通过第一气体分配器272的流动路径。返回图2A，可为如喷头的气体分配板的阻挡板228及气体分配板(如第二气体分配器230)被设置在盖组件214下方。
或者，可使用不同的清洁处理来清洁基板表面。例如，可通过盖组件214来将包含He及NF3的远程等离子体引入至处理腔室200中，同时可通过单独的气体入口225来将NH3直接注入处理腔室200中，所述气体入口225设置在腔室主体212的侧面并耦接到气源(未示出)。
支撑组件216可包括基板支撑件232，以在处理期间在基板支撑件232上支撑基板210。基板支撑件232可经由轴236耦接到致动器234，所述轴236延伸穿过形成在腔室主体212的底部中的中心开口。致动器234可通过波纹管(未示出)来柔性地密封至腔室主体212，所述波纹管防止轴236周围的真空泄漏。致动器234允许基板支撑件232于处理位置及装载位置之间在腔室主体212内垂直移动。装载位置略低于形成在腔室主体212的侧壁中的通道(未示出)的开口。
基板支撑件232具有平坦的(或基本上平坦的)基板支撑表面，以支撑在基板支撑表面上待处理的基板。可通过致动器234在腔室主体212内垂直移动基板支撑件232，所述致动器234经由轴236来耦接到基板支撑件232。对于一些步骤来说，可将基板支撑件232升高到紧邻盖组件214的位置，以控制正在处理的基板210的温度。如此一来，可经由从第二气体分配器230或另一辐射源发出的辐射来加热或通过来自第二气体分配器230的经由中间气体的对流或传导来加热基板210。在一些处理步骤中，基板可设置在升降杆251上，以执行额外的热处理步骤，如执行退火步骤。
图2C为图2A的基板支撑件232的放大横截面视图。基板支撑件232包括与流体供应导管241及流体回流导管243流体连通的热控制气室235，导管241及243中的每一个穿过轴236设置。热控制气室235可为通过使冷却流体循环通过流体供应导管241、进入热控制气室235，并通过流体回流导管243流出的用于基板支撑件232的冷却特征。
基板支撑件232亦可包括多个加热器237及239。在此实施方式中，多个加热器包括第一加热器237及第二加热器239。第一加热器237及第二加热器239以基本上共面的关系设置在基板支撑件232内的位置，以使加热器及基板支撑表面之间能够热耦接。第一加热器237设置在基板支撑件232的外围，及第二加热器239设置在基板支撑件232的中心区域中，以提供区域温度控制。第一加热器237及第二加热器239中的每一个可为电阻式加热器，所述电阻式加热器通过相应的电力导管249及247耦接到电源(未示出)，每个电力导管249及247穿过轴236设置。
在操作中，可通过热控制气室235及加热器237及239的同时操作来提供温度控制。如上所述，可向热控制气室235供应冷却流体，且可提供电力给加热器237及239来作为电阻式加热器。以此方式，可调谐单独的控制电路以对一项目(例如，加热器237及239)提供快速响应，及对热控制气室235提供较慢的回应，反之亦然。至少，可将不同的控制参数应用于热控制气室235、第一加热器237及第二加热器239，以实现优化的区域温度控制系统。
如图2C所示，单独的升降构件245可包括在支撑组件216中。可在基板支撑表面中提供凹槽，以当基板放置在基板支撑表面上时容纳构件245的升降杆251。升降构件245可通过经设置穿过轴236的升降构件245的延伸部耦接到升降致动器255。升降致动器可垂直移动升降构件245以从基板支撑表面朝向第一气体分配器272将基板升降起来。升降构件245可为箍，如开口箍或闭合箍，所述箍可为U形、圆形、马蹄形或任何方便的形状。升降构件245具有在提升基板时提供结构强度的厚度。在一个实例中，升降构件由陶瓷材料制成且厚度为约1mm。
图3示出了根据一个实施方式的单基板化学气相沉积(CVD)反应器300，单基板化学气相沉积(CVD)反应器300包括石英处理腔室或反应腔室305。反应器300可用于许多不同材料的CVD，所述不同材料包括如本文所公开的SiGe及Ge膜。此外，所示的反应器300可在同一腔室305中完成多个沉积步骤；这将从下文的论述中显而易见。
反应器300通常可具有矩形盒的形状。多个辐射热源经支撑在处理腔室305的外部，以在处理腔室305中提供热能，而不会被处理腔室305的壁明显吸收。虽然在用于处理半导体基板的“冷壁”CVD反应器的背景下描述了实施方式，但应理解的是，本文所描述的方法可与其他加热/冷却系统结合使用，如采用感应加热或电阻式加热的系统。
辐射热源包括上部加热组件，所述上部加热组件包括多个细长的加热元件310(在此视图中仅示出一个)。加热元件310为细长的管型辐射加热元件，如灯。加热元件310以间隔开的平行关系设置，且还基本上平行于通过处理腔室305的反应气体流动路径(由箭头312示出)。下部加热组件包括位于处理腔室305下方及横向于加热元件310定向的类似的加热元件315(如灯)。一部分辐射热分别通过上部加热元件310及下部加热元件315上方及下方的粗糙镜面反射板(未示出)漫反射到处理腔室305中。此外，多个聚光灯320将集中的热供应至基板支撑结构的下侧(下文描述)，以抵消由延伸通过处理腔室305底部的冷支撑结构所产生的散热效果。在一些实施方式中，每个加热元件310及315为高强度钨丝灯，所述高强度钨丝灯产生穿过处理腔室305的壁所传送而没有明显吸收的辐射热能。如在半导体处理设备领域中已知，可响应于温度传感器而独立地或在分组区域中控制各种加热元件310、315及320的功率。
包括硅基板325的工件被示出为在基板支撑结构330上支撑在处理室305内。所示支撑结构330包括基板保持器332(基板325放置在基板保持器332上)及支撑支架(supportspider)334。支架334安装在轴336上，轴336向下延伸穿过管338，所述管338延伸穿过腔室下壁。管338与净化气体源连通，净化气体源可在基板处理期间流动。净化气体可用于抑制处理气体进入处理腔室305的下部分。净化气体亦可在基板325下方水平流动。
多个温度传感器定位在基板325附近。可采用多种形式的温度传感器，如光学高温计或热电偶。在所示实施方式中，温度传感器包括热电偶，所述等热电偶包括第一或中央热电偶340，所述第一或中央热电偶340以任何合适的方式悬挂在基板保持器332下方。中央热电偶340在基板保持器332附近穿过支架334。反应器300进一步包括亦在基板325附近的多个辅助或外围热电偶，所述多个辅助或外围热电偶包括前缘或前热电偶345、后缘或后热电偶350及侧热电偶(未示出)。每个外围热电偶容纳在滑环352内，所述滑环352围绕基板保持器332及基板325。中心及外围热电偶中的每一个连接到温度控制器，所述温度控制器响应热电偶的读数来设定各种加热元件310、315及320的功率。
除了容纳外围热电偶之外，滑环352在高温处理期间吸收并发射辐射热。滑环352可用于补偿基板边缘处的较大热损失或吸收，已知由于在基板边缘附近的区域中表面积与体积的比率较大所发生的现象。通过最小化边缘损失，滑环352可降低穿过基板325的径向温度不均匀的风险。可通过任何合适的方式悬挂滑环352。例如，图示的滑环352放置在支撑构件354上，所述支撑构件354从前腔室分隔器356及后腔室分隔器358延伸。分隔器356及358理想地由石英形成。在一些布置中，可省略后分隔器358。
所图示的处理腔室305包括用于注入反应物及载气的入口端口360，且也可通过入口端口360接收基板325。出口端口364位于处理腔室305的相对侧，及基板支撑结构330位于入口端口360及出口端口364之间。
入口部件365装配到经调适于围绕入口端口360的处理腔室305，及入口部件365包括水平伸长的槽367，基板325可通过所述槽367插入。大体上垂直的入口368接收来自气源的气体并将所述气体与槽367及入口端口360连通。虽然未在图3中单独示出，但气源可包括氢、硅及锗前驱物，及控制如本文所述的一系列步骤的控制器(例如，预先程序化的计算机)，所述系列步骤包括在Si及/或Ge沉积之前的冷却步骤期间使表面活性化合物流入腔室中。入口368可包括气体注射器，所述气体注射器设计成使单基板反应器的气流均匀性最大化。
类似地，出口部件370安装到处理腔室305，使得排气口372与出口端口364对齐并通向排气导管374。导管374接着可与合适的用于从处理腔室305排出处理气体的真空工具(未示出)连通。在一个实施方式中，经由处理腔室305及下游洗涤器(未示出)抽吸处理气体。如下所述，较佳地包括泵或风扇以帮助经由处理腔室305抽吸处理气体及以抽空腔室来进行减压处理(即，低于大气压但高于超高真空压力范围)。
图示的反应器300亦包括位于反应器300上游的激发物种源376。所示实施方式的激发物种源376包括远程等离子体产生器，所述远程等离子体产生器包括磁控管发电机及沿气体接线378的施加器。在所示的实施方式中，来自磁控管的微波能量沿着气体接线378耦接到施加器中的流动气体。前驱物气源380耦接到气体接线378以引入至激发物种源376中。载气气源382亦耦接到气体管接线378。亦可提供一或多个支线384以用于另外的反应物。如所属技术领域中已知的，取决于反应物种的形式及挥发性，气源380及382可包括气罐及起泡器等。如图所示，每个气体接线可设置有单独的质量流量控制器(MFC)及阀，以允许选择引入至源376并因此进入处理腔室305的载体及反应物种的相对量。激发物种源376可用于等离子体增强沉积，但亦可用于激发蚀刻剂，以在腔室305中没有基板时清洁腔室305过量沉积。
例如，设计用于处理200mm基板的单基板处理腔室305的总容积容量小于约30升，如小于约20升，且在一个实施方式中小于约10升。所图示的腔室305具有约7.5升的容量。因所示的处理腔室305由分隔器356及358、基板保持器332、环352及从管338流出的净化气体分隔，处理气体流过的有效容积大约是总容积的一半(例如，在所示实施方式中约为3.77升)。要理解的是，单基板处理腔室305的容积可为不同，取决于处理腔室305设计用于容纳的基板的尺寸。例如，用于300mm基板的单基板处理腔室305具有小于约100升的容量，如约60升，且在一个实施方式中小于约30升。在一个实例中，用于处理300mm基板的单基板处理腔室305具有约24升的总容积，有效体积为约12升。
含Ge层的沉积温度通常在约250摄氏度(C)至约600摄氏度的范围内，例如约300摄氏度至约450摄氏度。例如，较低的沉积温度会更合适，因前驱物的热稳定性降低。单基板处理室305中的总压力在约10 -5Torr至约800Torr的范围内。在一些实施方式中，压力为约200mTorr至约760Torr，如约1Torr至约200Torr，例如约1Torr至约60Torr。
图4示出了根据一个实施方式的经配置用于低压外延沉积的背面加热处理腔室400的示意性剖面图。处理腔室400可用于处理一或多个基板，包括在基板325的上表面上沉积材料。处理腔室400可包括用于加热的辐射加热灯402的阵列及除其他部件外设置在处理室400内基板支撑件406的背面404。基板支撑件406可为如所示的盘状基板支撑件406，或可为(具有中心开口的)环状基板支撑件，环状基板支撑件支撑来自基板边缘的基板，以便于基板暴露于灯402的热辐射。
基板支撑件406位于上圆顶428及下圆顶414之间的处理腔室400内。上圆顶428、下圆顶414及设置在上圆顶428与下圆顶414之间的基环436大体上限定了处理腔室400的内部区域。基板325(未按比例)被转移到处理腔室400中并通过此视图中未示出的装载口定位在基板支撑件406上。
基板支撑件406由中央轴432支撑，中央轴432在装载及卸除期间(在一些情况下在基板325的处理期间)沿垂直方向434移动基板325。以图4中的升高处理位置示出基板支撑件406，但可由耦接到中央轴432的致动器(未示出)垂直地移动到处理位置下方的装载位置。当降低到处理位置以下时，升降杆(未示出)接触基板325并从基板支撑件406升高基板325。机器人(未示出)接着可进入处理腔室400以通过装载口接合并从处理腔室400移除基板325。接着可垂直于处理位置来致动基板支撑件406，以将基板325(基板325的装置侧416面朝上)放置在基板支撑件406的正面410上。
当基板支撑件406位于处理位置时，基板支撑件406将处理腔室400的内部容积划分成基板325上方的处理气体区域456及基板支撑件406下方的净化气体区域458。在处理期间，基板支撑件406由中央轴432旋转，以最小化处理腔室400内的热及处理气流空间异常的影响，从而促进基板325的均匀处理。基板支撑件406可由碳化硅或涂有碳化硅的石墨形成，以吸收来自灯402的辐射能并将辐射能传导到基板325。
一般来说，上圆顶428的中央窗部分及下圆顶414的底部由如石英的光学透明材料形成。上圆顶428的厚度及曲率可配置成提供更平坦的几何形状，以在处理腔室中有均匀的流动均匀性。
可用指定的、最佳期望的围绕中心轴432的方式设置灯402的阵列邻近下圆顶414并位于下圆顶414下方，以在处理气体经过时独立地控制基板325的各个区域处的温度，这有助于将材料沉积至基板325的上表面上。虽然本文并未详细论述，但沉积的材料可包括砷化镓、氮化镓或氮化铝镓。在一些实施方式中，辐射加热灯阵列(如灯402)可设置在上圆顶428之上。
灯402可被配置程包括灯泡，所述灯泡经配置为将基板325加热到约200摄氏度至约1600摄氏度的温度范围内。每个灯402耦接到电源分配板(未示出)，通过所述电源分配板电力供应至每个灯402。灯402位于灯头445内，可在处理期间或之后通过(例如)被引入位于灯402之间的通道449中的冷却流体来冷却灯头445。部分由于灯头445紧密靠近下圆顶414，故灯头445导电且辐射地冷却下圆顶414。灯头445亦可冷却灯壁及灯周围的反射器壁(未示出)。或者，可通过对流方法冷却下圆顶414。取决于应用，灯头445可或可不与下圆顶414接触。
圆形的罩467可以可选地设置在基板支撑件406周围并由衬垫组件463围绕。罩467防止或最小化从灯402到基板325的装置侧416的热/光噪声的泄漏，同时为处理气体提供预热区。罩467可由CVD SiC、涂有SiC的烧结石墨、生长的SiC、不透明的石英、涂覆的石英或任何通过处理及净化气体抵抗化学分解的类似的、合适的材料制成。
衬垫组件463的尺寸设计成嵌套在基环436的内圆周内或由基环436的内圆周围绕。衬垫组件463将处理空间(即，处理气体区域456及净化气体区域458)与处理腔室400的金属壁屏蔽开来。金属壁可与前驱物反应并导致处理容积中的污染。虽然衬垫组件463被示出为单个主体，但衬垫组件463可包括具有不同配置的一或多个衬垫。
作为基板支撑件406加热基板325的背面的结果，可执行光学高温计418在基板支撑件上的温度测量/控制的使用。亦可在具有未知发射率的基板325的装置侧416上完成光学高温计418的这种温度测量(因以这种方式加热基板正面410是与发射率无关的)。结果，光学高温计418仅能感测来自热基板325的辐射，所述辐射从基板支撑件406传导热量且具有直接到达光学高温计418的来自灯402的最小背景辐射。
反射器422可以可选地放置在上圆顶428的外部，以将从基板325辐射的光反射回到基板325上。可使用夹环430来将反射器422固定到上圆顶428。反射器422可由如铝或不锈钢的金属制成。通过用如金的高反射涂层涂覆反射器区域可提高反射效率。反射器422可具有连接到冷却源(未示出)的一或多个通道426。通道426连接到用于冷却反射器422的形成在反射器422的一侧上的通道(未示出)。通道经配置成承载如水的流体流，且所述通道可沿反射器422的侧面水平延伸成覆盖反射器422的一部分或整个表面的任何所需图案。
从处理气体供应源472供应的处理气体通过形成在基环436的侧壁中的处理气体入口474而经引入至处理气体区域456。处理气体入口474经配置成以大致径向向内的方向引导处理气体进入。在膜形成处理期间，基板支撑件406可位于处理位置中，所述处理位置与处理气体入口474相邻且处于与处理气体入口474大致相同的高度，从而允许处理气体以层流方式沿着穿过基板325的上表面的流动路径473向上且环绕所述流动路径473流动。处理气体通过气体出口478(沿着流动路径475)而离开了处理气体区域456，所述气体出口478位于处理腔室400的与处理气体入口474相对的一侧。可通过与气体出口478耦接的真空泵480来助于移除通过气体出口478的处理气体。因处理气体入口474及气体出口478彼此对齐且大致设置在相同的高度处，因此认为此种平行布置当与更平坦的上圆顶428结合时能够实现大体上平坦的、均匀的通过基板325的气流。可通过基板325通过基板支撑件406的旋转来提供进一步的径向均匀性。
可通过在基环436的侧壁中所形成的可选的净化气体入口464(或通过处理气体入口474)自净化气源462将净化气体供应至净化气体区域458。净化气体入口464经设置在处理气体入口474下方的高度处。若使用圆形的屏蔽467或预热环(未示出)，则圆形的屏蔽或预热环可设置在处理气体入口474及净化气体入口464之间。在任一种情况下，净化气体入口464经配置成沿大体上径向向内的方向引导净化气体。在膜形成处理期间，基板支撑件406可位于使得净化气体以层流方式沿着穿过基板支撑件406的后侧404的流动路径465向下且环绕所述流动路径465流动的位置。不受任何特定理论的束缚，认为净化气体的流动防止或基本上避免处理气体的流动进入净化气体区域458，或减少进入净化气体区域458(即，基板支撑件406下方的区域)的处理气体的扩散。净化气体(沿着流动路径466)离开净化气体区域458且通过气体出口478排出处理腔室，所述气体出口478位于处理腔室400与净化气体入口464相对的一侧。
图5为CVD或外延沉积处理腔室500的示意性横截面视图，所述处理腔室500可为可从加州圣克拉拉市的应用材料公司获得的整合处理系统的一部分。处理腔室500包括由耐工艺材料(如铝或不锈钢，例如316L不锈钢)制成的外壳结构501。外壳结构501包围如石英腔室530的处理腔室500的各种功能元件，处理腔室500包括其中包含处理容积518的上腔室505及下腔室524。通过气体分配组件550将反应物种提供给石英腔室530，且通过出口端口538从处理容积518移除处理副产物，出口端口538通常与真空源(未示出)连通。
基板支撑件517适于接收经传送至处理容积518的基板325。沿着处理腔室500的纵轴502设置基板支撑件517。基板支撑件517可由陶瓷材料或涂有硅材料的石墨材料(如碳化硅或其他耐工艺材料)制成。将来自前驱反应物材料的反应物种施加到基板325的表面516，且随后可从表面516移除副产物。可由如上灯模块510A及下灯模块510B的辐射源提供基板325及/或处理容积518的加热。
在一个实施方式中，上灯模块510A及下灯模块510B为红外(IR)灯。来自灯模块510A及510B的非热能或辐射穿过上石英腔室505的上石英窗504及穿过下石英腔室524的下石英窗503。若需要，上石英腔室505的冷却气体通过入口512进入及通过出口513离开。前驱反应物材料及处理腔室500的稀释剂、净化气体及排出气体通过气体分配组件550进入及通过出口端口538离开。虽然上石英窗504经显示为弯曲的或突起的，但当上石英窗504的两侧的压力大体上相同(即，大气压)时上石英窗504可为平的或凹的。
用于激发反应物种并有助于反应物的吸附及处理副产物从基板325的表面516的解吸附的处理容积518中的低波长辐射通常在约0.8μm至约1.2μm的范围内(例如，在约0.95μm至约1.05μm之间)；提供各种波长的组合，这取决于(例如)外延生长的膜的组成。
成分气体经由气体分配组件550进入处理容积518。如在522处大体上展示地，气体从气体分配组件550流出并通过端口538离开。用于清洁/钝化基板表面或形成外延生长的含硅及/或锗的膜的成分气体的组合通常在进入处理容积之前混合。可通过出口端口538上的阀(未示出)来调整处理容积518中的总压力。处理容积518的内表面的至少一部分被衬垫531覆盖。在一个实施方式中，衬垫531包括不透明的石英材料。以此方式，腔室壁与处理容积518中的热隔离。
可通过冷却气体的流动及结合来自位于上石英窗504上方的上灯模块510A的辐射来将处理容积518中的表面温度控制在约200℃至约600℃或更高的温度范围内，所述冷却气体通过入口512进入并通过出口513离开。通过调节未示出的送风机单元的速度及来自设置在下石英室524下方的下灯模块510B的辐射，可将下石英室524中的温度控制在约200℃至约600℃或更高的温度范围内。处理容积518中的压力可在约0.1Torr至约600Torr之间，如在约5Torr至约30Torr之间。
可通过对下石英腔室524中的下灯模块510B的功率调节、或通过对覆盖上石英窗504的上灯模块510A及下石英腔室524中的下灯模块510B两者的功率调节来控制基板325表面516上的温度。处理容积518中的功率密度可在约40W/cm2至约400W/cm2之间，如约80W/cm2至约120W/cm2。
在一方面中，气体分配组件550相对于处理腔室500或基板325的纵轴502垂直于或沿径向方向506设置。在此取向中，气体分配组件550经调适以越过基板325的表面516或与基板325的表面516平行以径向方向506流动处理气体。在一个处理应用中，在引入处理腔室500的位置处预热处理气体，以在引入处理容积518前开始预热气体及/或破坏气体中的特定键。以此方式，可独立于基板325的热温度改变表面反应机制。
在操作中，从一或多个气源540A及540B将形成Si及SiGe覆盖或选择性膜的前驱物提供给气体分配组件550。IR灯556(图5中仅示出一个)可用于加热气体分配组件550内及沿着流动路径522的前驱物。气源540A及540B可用经配置成便于气体分配组件550内的引入区域(如从顶部平面图所观察的外部区域之间的径向外部区域及径向内部区域)的方式来耦接气体分配组件550。气源540A及540B可包括阀(未示出)以控制引入区域的速率。
气源540A及540B可包括如硅烷的硅前驱物，所述硅前驱物包括硅烷(SiH4)、乙硅烷(Si2H6)、二氯硅烷(SiH2Cl2)、六氯乙硅烷(Si2Cl6)、二溴硅烷(SiH2Br2)、高级硅烷、上述衍生物及上述组合。气源540A及540B亦可包括含锗前驱物，如锗烷(GeH4)、二锗烷(Ge2H6)、四氯化锗(GeCl4)、二氯锗烷(GeH2Cl2)、上述衍生物及上述组合。含硅及/或锗的前驱物可与氯化氢(HCl)、氯气(Cl2)、溴化氢(HBr)及上述组合结合使用。气源540A及540B可包括气源540A及540B中的一者或两者中的一或多种含硅及锗的前驱物。
前驱物材料通过开口或处于此激发态的穿孔板554中的多个孔558(图5中仅示出一个)进入处理容积518，所述多个孔558在一个实施方式中为石英材料，所述石英材料具有形成于所述石英材料中的孔558。穿孔板554对IR能量是透明的且可由透明的石英材料制成。在其他实施方式中，穿孔板554可为对IR能量透明且耐工艺化学及其他处理化学物质的任何材料。经激发的前驱物材料通过穿孔板554中的多个孔558并通过多个通道552N(图5中仅示出一个)朝处理容积518流。来自IR灯556的一部分光子及非热能亦穿过孔558、穿孔板554及由设置在气体分配组件550的内表面上的反射材料及/或表面所帮助的通道552N，从而照亮前驱物材料的流动路径(如图5中的箭头522所示)。以此方式，可从沿着流动路径引入处理容积518的点保持前驱物材料的振动能量。
图6示出了根据本申请案的实施方式的可用于完成图1中所示的处理列100的示例性真空处理系统600。如图6所示，多个处理腔室602a、602b、602c及602d经耦接到第一传送腔室604。处理腔室602a至602d可用于执行任何与基板相关的处理，如退火、化学气相沉积、物理气相沉积、外延处理、蚀刻处理、热氧化或热氮化工艺及脱气等。在一个实施方式中，处理腔室602a可为如气相外延沉积腔室的膜形成腔室，例如可从加州圣克拉拉市的应用材料公司所获得的能够形成晶体硅或硅锗的Epi腔室。在另一实施方式中，处理腔室602a可为外延沉积腔室，如单基板处理腔室(例如，结合图3描述的反应器300)。在另一实施方式中，处理腔室602a可为结合图4描述的处理腔室400。在另一实施方式中，处理腔室602a可为结合图5描述的处理腔室500。
处理腔室602b可为快速热处理腔室(RTP)。处理腔室602c为等离子体蚀刻腔室或等离子体清洁腔室。例如，处理腔室602c可为结合图2A描述的处理腔室200或结合图3描述的处理腔室300。处理腔室602d可为脱气室。第一传送腔室604亦耦接到至少一个过渡站，例如一对直通站606及608。直通站606及608保持真空条件，同时允许基板在第一传送腔室604及第二传送腔室610之间传送。第一传送腔室604具有机器人基板处理机构(未示出)，以在直通站606、直通站608及任何处理腔室602a至602d之间传送基板。处理腔室602a至602d被示出为以图6中的特定顺序配置，但处理腔室602a至602d可用任何期望顺序配置。
直通站606及608的一端耦接至第二传送腔室610。因此，通过直通站606及608分离及连接第一传送腔室604及第二传送腔室610。第二传送腔室610耦接到第一等离子体清洁腔室614，第一等离子体清洁腔室614可为如处理腔室200(图2A)的等离子体腔室，所述等离子体腔室经调适以执行方块602中的至少一些用于从基板表面移除氧化物的处理。在一个实施方式中，第一等离子体清洁腔室614为可从加州圣克拉拉市的应用材料公司获得的SiconiTM或SelectraTM腔室。在另一种实施方式中，等离子体清洁腔室614可为结合图2A描述的处理腔室200。在另一种实施方式中，等离子体清洁腔室614可为结合图3描述的处理腔室300。
在一个实施方式中，至少一个过渡站(例如，直通站606及608中的一个)经配置成等离子体清洁腔室。或者，等离子体清洁腔室可耦接到直通站606及608中的一个，以从基板表面移除污染物。因此，处理系统600可具有第二等离子体清洁腔室，所述第二等离子体清洁腔室为或连接至直通站606及608中的一个。在图6所示的一个实施方式中，直通站606包括第二等离子体清洁腔室616。第二等离子体清洁腔室616可为经调适以执行方块102中所发现的至少一些用于从基板表面移除污染物的处理的一种形式的处理腔室300(图3)。应注意的是，尽管仅示出了一个等离子体清洁腔室616耦接到直通站(在此情况下为直通站606)，但等离子体清洁腔室(例如，一种形式的处理腔室300)仍可耦接直通站606及608两者。
第二传送腔室610亦具有用于在一组装载锁定腔室612及第一等离子体清洁腔室614或第二等离子体清洁腔室616之间传送基板的机器人基板处理机构(未示出)，工厂接口620通过装载锁定腔室612连接到第二传送腔室610。工厂接口620耦接到装载锁定腔室612的相对侧上的一或多个容器630。容器630通常是可从清洁室(未示出)进入的前开式晶片传送盒(FOUP)。
虽然示出了两个传送腔室，但可预期到可省略任何传送腔室。在省略第二传送腔室610的一个实施方式中，第二等离子体清洁腔室616可设置在第一传送腔室604内或在当前示出为由直通站606或608占据的位置处耦接到第一传送腔室604。第一传送腔室604可耦接到能形成晶体硅或硅锗的一或多个如外延腔室的处理腔室，例如可从加州圣克拉拉市的应用材料公司获得的CenturaTM Epi腔室。或者，可省略第一传送腔室604，且第二等离子体清洁腔室616可设置在直通站606内或耦接到直通站606，直通站606耦接到第二传送腔室610。在此情况下，第二传送腔室610可被配置成耦接到能够形成晶体硅或硅锗的一或多个处理腔室。
在操作中，基板从容器630运送到运输盒(未示出)中的真空处理系统600，所述运输盒位于装载锁定腔室612中的一个内。第二传送腔室610内的机器人传送机构一次一个地将基板自装载锁定腔室612传送至第一等离子体清洁腔室614，在第一等离子体清洁腔室614执行清洁处理(例如在方块102中找到的处理)，以从基板表面移除氧化物。一旦从基板表面移除了氧化物，设置在第二传送腔室610内的机器人传送机构将基板从第一等离子体清洁腔室614传送到第二等离子体清洁腔室616，在第二等离子体清洁腔室616执行还原处理(例如，在方块103中找到的处理)，以从基板表面移除如碳或碳氢化合物的污染物。可想到的是，亦可用相反顺序执行预期本文步骤；即，使用机器人传送机构将基板从第二等离子体清洁腔室616传送到第一等离子体清洁腔室614。在任一情况下，接着通过设置在第一传送腔室604内的机器人传送机构将清洁的基板从第二等离子体清洁腔室616(或第一等离子体清洁腔室614)传送到一或多个处理腔室602a-602d。一或多个处理腔室602a至602d可包括外延处理腔室，其中执行层形成处理(如方块106中描述的外延沉积)。
在完成一或多个处理腔室602a至602d中的处理之后，设置在第一传送腔室604内的机器人传送机构就将基板从处理腔室602中的任一个移动至直通站608。接着通过设置在第二传送腔室610内的机器人传送机构将基板从直通站608移除，并将基板传送到另一个装载锁定腔室612，通过另一个装载锁定腔室612将基板从真空处理系统600中取出。
因在相同的真空处理系统600内执行图1的所有三个方块102、103及106的处理，故当基板在各个腔室之间传送时不会破坏真空，这降低了污染的可能性并改善了沉积外延膜的质量。应该理解的是，本文为了说明目的描述了基板的移动。控制器(未示出)可用于根据期望的排序程序来排程(schedule)基板通过真空处理系统600的移动，可根据应用而变化所述排序程序。
本申请案的益处包括经改善的真空处理系统，所述经改善的真空处理系统将两个不同类型的预清洁处理腔室与外延处理腔室集成在相同的真空处理系统上。预清洁处理腔室可包括第一等离子体清洁处理腔室及第二等离子体清洁处理腔室。在相同的真空处理系统上共存两种类型的表面材料移除腔室允许基板在表面制备及外延沉积之间保持真空，这减少了基板暴露于环境的时间且消除了在分离的处理腔室或系统上制备基板的需要。因两个传送腔室之间的直通站亦作为预清洁处理腔室(这也减少了基板的总处理时间)，故此种结构亦使真空系统上的处理腔室的数量最大化。
可在图2A的处理腔室200中执行图1的处理102的实例。经由远程等离子体单元224引导氩、通过入口256引导氩中的5至10％HF的第一混合物，及通过入口258引导氩中的25％NH3的第二混合物。通过向2sLm流动的氩施加500W的微波或RF功率形成远程等离子体。第一混合物以500sccm流过第一入口256，及第二混合物以500sccm流过第二入口258。通过将温度控制流体引导通过热控制气室235来将基板维持在10摄氏度的温度。可给基板支撑件232供电以提供径向温度控制。将腔室保持在5Torr的压力下，及将基板处理适于将基板表面上的所有所需氧化物转化成可升华固体的一时间，例如300秒。接着将基板移动靠近第二气体分配器230，将第二气体分配器230加热到约200摄氏度以对基板表面提供辐射或传导热。将基板保持在从第二气体分配器230辐射的热的附近1至5分钟，以使在基板表面上形成的固体升华，留下无氧表面。接着可任选地在惰性气氛下对基板进行热处理，以从氧化物移除处理中移除任何残留物种(如含氟物种)。热处理可包括将基板设置在热处理腔室中并激发腔室中的热处理设备以将基板加热到约300摄氏度的温度约1分钟。
虽然前述内容针对本申请案的实施方式，但可在不脱离本申请案的基本范围的情况下设计本申请案的其他及进一步的实施方式。

Claims (14)

1.一种处理系统，包括：
传送腔室，所述传送腔室耦接至至少一个膜形成腔室；
等离子体氧化物移除腔室，所述等离子体氧化物移除腔室耦接至所述传送腔室，所述等离子体氧化物移除腔室包括：
远程等离子体源；
基板支撑件，包括冷却通道和加热器；以及
盖组件，包括：
中央导管；
位于所述中央导管下方的气体分配板；以及
形成在所述盖组件中的混合腔室，所述混合腔室具有侧壁，所述侧壁从所述中央导管到所述气体分配板向内成锥形，以及
装载锁定腔室，所述装载锁定腔室耦接至所述传送腔室。
2.如权利要求1所述的处理系统，其中所述等离子体氧化物移除腔室为RF远程等离子体腔室。
3.如权利要求1所述的处理系统，其中所述膜形成腔室为外延腔室。
4.如权利要求1所述的处理系统，其中所述等离子体氧化物移除腔室为氟处理腔室，及所述膜形成腔室为外延腔室。
5.如权利要求4所述的处理系统，其中所述等离子体氧化物移除腔室中的所述加热器为电阻式加热器。
6.如权利要求5所述的处理系统，所述处理系统进一步包括退火腔室。
7.如权利要求1所述的处理系统，其中所述等离子体氧化物移除腔室的所述加热器是电阻式加热器。
8.一种处理设备，包括：
第一传送腔室，所述第一传送腔室耦接到至少一个气相外延腔室；
等离子体氧化物移除腔室，所述等离子体氧化物移除腔室耦接至所述第一传送腔室，所述等离子体氧化物移除腔室包括：
盖组件，所述盖组件具有混合腔室、中央导管及气体分配器，所述混合腔室具有侧壁，所述侧壁从所述中央导管到所述气体分配器向内成锥形；
第一气体入口，所述第一气体入口穿过所述盖组件的一部分形成且与所述混合腔室流体连通；
第二气体入口，所述第二气体入口穿过盖组件的一部分形成且与所述混合腔室流体连通；
第三气体入口，所述第三气体入口穿过盖组件的一部分形成且与混合腔室流体连通；及
基板支撑件，所述基板支撑件具有：
基板支撑表面；
冷却通道及一或多个嵌入所述基板支撑件中的电阻式加热器；及
升降构件，所述升降构件设置在所述基板支撑表面的凹槽中且通过所述基板支撑件耦接至升降致动器；及
装载锁定腔室，所述装载锁定腔室耦接至所述第一传送腔室。
9.如权利要求8所述的处理设备，所述处理设备进一步包括通过一或多个直通站耦接到所述第一传送腔室的第二传送腔室。
10.如权利要求9所述的处理设备，所述处理设备进一步包括耦接到所述第一传送腔室或第二传送腔室的热处理腔室。
11.如权利要求8所述的处理设备，其中所述等离子体氧化物移除腔室是RF远程等离子体腔室。
12.如权利要求8所述的处理设备，所述处理设备进一步包括膜形成腔室。
13.如权利要求12所述的处理设备，其中所述膜形成腔室是外延腔室。
14.如权利要求12所述的处理设备，其中所述等离子体氧化物移除腔室是氟处理腔室，并且所述膜形成腔室是外延腔室。
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