JP2017530545A - 静電チャックのためのガス効率の向上 - Google Patents
静電チャックのためのガス効率の向上 Download PDFInfo
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000001307 helium Substances 0.000 claims description 12
- 229910052734 helium Inorganic materials 0.000 claims description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 12
- 230000002085 persistent effect Effects 0.000 claims description 11
- 230000003134 recirculating effect Effects 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052754 neon Inorganic materials 0.000 claims description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052724 xenon Inorganic materials 0.000 claims description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004064 recycling Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000009530 blood pressure measurement Methods 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
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- 239000012212 insulator Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- 230000001360 synchronised effect Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0623—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the set value given to the control element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49764—Method of mechanical manufacture with testing or indicating
- Y10T29/49771—Quantitative measuring or gauging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49764—Method of mechanical manufacture with testing or indicating
- Y10T29/49771—Quantitative measuring or gauging
- Y10T29/49776—Pressure, force, or weight determining
Abstract
Description
Claims (15)
- 静電チャック用の裏面ガスの効率を高める方法であって、
入口を通してガスを受け入れる工程と、
ガスの第1部分を静電チャックに供給する工程と、
圧縮機を介してガスの第2部分を再循環させる工程とを含む方法。 - 圧縮機によってガスの第2部分の圧力を増加させる工程と、
ガスの第2部分をガス貯蔵装置に貯蔵する工程とを含む、請求項1記載の方法。 - ガスは、ヘリウム、アルゴン、ネオン、クリプトン、キセノン、他の不活性ガス、窒素、又はそれらの任意の組み合わせである、請求項1記載の方法。
- 第1時間間隔の間、オリフィスを介してガスの第2部分を真空ラインに供給する工程を含み、第2時間間隔の間、ガスの第2部分は、再循環ラインに供給される、請求項1記載の方法。
- 静電チャックにおけるガスの圧力設定点を決定する工程と、
ガスの較正曲線を得る工程と、
較正曲線に基づいて圧力設定点に対するガスの第1部分の流量を推定する工程と、
推定された流量に基づいてガスの第1部分を制御する工程とを含む、請求項1記載の方法。 - 静電チャック用のガスの効率を高めるシステムであって、
ガスを受け入れる入口と、
ガスの第1部分を静電チャックに供給するために入口に結合された第1出口と、
第1出口に結合され、圧縮機を介してガスの第2部分を再循環させる第2出口と、
入口、第1出口、及び第2出口のうちの少なくとも1つを制御するように結合されたコントローラとを含むシステム。 - ガスの第2部分の圧力を増加させるために第2出口に結合された圧縮機と、
ガスの第2部分を貯蔵するために圧縮機に結合されたガス貯蔵装置とを含む、請求項6記載のシステム。 - ガスは、ヘリウム、アルゴン、ネオン、クリプトン、キセノン、他の不活性ガス、窒素、又はそれらの任意の組み合わせである、請求項6記載のシステム。
- コントローラは、第1時間間隔の間、オリフィスを介してガスの第2部分を真空ラインに供給するのを制御するための第1構成を有し、コントローラは、第2時間間隔の間、ガスの第2部分を循環させるのを制御するための第2構成を有する、請求項6記載のシステム。
- コントローラは、静電チャックにおけるガスの圧力設定点を決定するための第3構成を有し、コントローラは、ガスの較正曲線を得るための第4構成を有し、コントローラは、較正曲線に基づいて圧力設定点に対する静電チャックにおける流速を推定するための第5構成を有し、コントローラは、推定された流量に基づいてガスの第1部分を制御するための第6構成を有する、請求項6記載のシステム。
- データ処理システムによって実行されたときに、
入口を通してガスを受け入れる工程と、
ガスの第1部分を静電チャックに供給する工程と、
圧縮機を介してガスの第2部分を再循環させる工程とを含む操作をデータ処理システムに実行させる実行可能なプログラム命令を含む持続性マシン可読媒体。 - データ処理システムによって実行されたときに、
圧縮機によってガスの第2部分の圧力を増加させる工程と、
ガスの第2部分をガス貯蔵装置に貯蔵する工程とを含む操作をデータ処理システムに実行させる命令を含む、請求項11記載の持続性マシン可読媒体。 - データ処理システムによって実行されたときに、
第1時間間隔の間、オリフィスを介してガスの第2部分を真空ラインに供給する工程であって、第2時間間隔の間、ガスの第2部分は、再循環ラインに供給される工程を含む操作をデータ処理システムに実行させる命令を含む、請求項11記載の持続性マシン可読媒体。 - データ処理システムによって実行されたときに、
ガスの第1部分のための圧力設定点を決定する工程と、
ガスの較正曲線を得る工程と、
較正曲線に基づいて圧力設定点に対するガスの第1部分の流量を推定する工程と、
推定された流量に基づいてガスの第1部分を制御する工程とを含む操作をデータ処理システムに実行させる命令を含む、請求項11記載の持続性マシン可読媒体。 - データ処理システムによって実行されたときに、
ガスが入口を通って供給されているかどうかを判定する工程と、
ガスが入口を通って供給されている場合に、圧縮機にトリガー信号を送信する工程とを含む操作をデータ処理システムに実行させる命令を含む、請求項11記載の持続性マシン可読媒体。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462049963P | 2014-09-12 | 2014-09-12 | |
US62/049,963 | 2014-09-12 | ||
US14/529,985 US9753463B2 (en) | 2014-09-12 | 2014-10-31 | Increasing the gas efficiency for an electrostatic chuck |
US14/529,985 | 2014-10-31 | ||
PCT/US2015/044102 WO2016039899A1 (en) | 2014-09-12 | 2015-08-06 | Increasing the gas efficiency for an electrostatic chuck |
Publications (2)
Publication Number | Publication Date |
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JP2017530545A true JP2017530545A (ja) | 2017-10-12 |
JP6655600B2 JP6655600B2 (ja) | 2020-02-26 |
Family
ID=55455451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017505188A Active JP6655600B2 (ja) | 2014-09-12 | 2015-08-06 | 静電チャックのためのガス効率の向上 |
Country Status (6)
Country | Link |
---|---|
US (3) | US9753463B2 (ja) |
JP (1) | JP6655600B2 (ja) |
KR (2) | KR102417007B1 (ja) |
CN (2) | CN106575635B (ja) |
TW (1) | TWI673810B (ja) |
WO (1) | WO2016039899A1 (ja) |
Cited By (1)
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WO2022224887A1 (ja) * | 2021-04-21 | 2022-10-27 | 東京エレクトロン株式会社 | ガス供給システム、基板処理装置、及びガス供給システムの運用方法 |
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JP7068062B2 (ja) * | 2018-06-18 | 2022-05-16 | 株式会社堀場製作所 | 流体制御装置、及び、流量比率制御装置 |
KR102297382B1 (ko) * | 2019-10-18 | 2021-09-01 | 세메스 주식회사 | 기판 처리 시스템 및 방법 |
CN114664620A (zh) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其处理方法 |
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CN110911336B (zh) | 2023-03-28 |
US20170329352A1 (en) | 2017-11-16 |
KR20220028176A (ko) | 2022-03-08 |
CN110911336A (zh) | 2020-03-24 |
KR20170051411A (ko) | 2017-05-11 |
TWI673810B (zh) | 2019-10-01 |
US20160079105A1 (en) | 2016-03-17 |
TW201618214A (zh) | 2016-05-16 |
WO2016039899A1 (en) | 2016-03-17 |
US11747834B2 (en) | 2023-09-05 |
US9753463B2 (en) | 2017-09-05 |
JP6655600B2 (ja) | 2020-02-26 |
CN106575635B (zh) | 2019-12-24 |
CN106575635A (zh) | 2017-04-19 |
US20230350435A1 (en) | 2023-11-02 |
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KR102417007B1 (ko) | 2022-07-05 |
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