JP2006303144A - 真空処理装置及び試料の真空処理方法 - Google Patents
真空処理装置及び試料の真空処理方法 Download PDFInfo
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Abstract
【解決手段】内部が減圧される真空容器と、この真空容器の内部に配置され処理対象の試料がその上に載置される試料台とを有し、前記試料台上方の前記真空容器内部の空間に供給される処理ガスおよび電界とを用いて形成したプラズマにより前記試料表面に配置された複数層の膜を所定の形状にエッチング処理する真空処理装置であって、前記試料台上の試料載置面と試料の裏面との間に伝熱用ガスを供給する伝熱用ガス供給手段を備えたものにおいて、前記試料載置面と前記試料の裏面の間に供給される前記伝熱用ガスの圧力を、前記試料の複数層の膜の処理の進行に応じて、段階的に変化させる伝熱用ガス圧力調節機能を備えている。
【選択図】図4
Description
すなわち、複数層の膜を処理する場合において、2つの膜の途中の所望の形状の状態において処理を切替えて次の処理を行おうとする場合で、前後の処理の温度条件が異なるものでは、迅速に温度を変更することが必要となるが、従来の技術ではこの温度を変更するために必要な時間が長いので、この間処理を停止したり、処理速度を遅くしたりする必要が生じ、処理の効率が低下してしまう。或いは、温度の変化の間に処理が進行し過ぎて所望のものから大きく外れた形状となってしまう。
前記試料載置面と前記試料の裏面の間に供給される前記伝熱用ガスの圧力を、前記試料の複数層の膜の処理の進行に応じて、段階的に変化させる伝熱用ガス圧力調節機能を備えたことにより達成される。
本発明の第1の実施例を、図1〜図10で説明する。
まず、本発明を適用したプラズマエッチング装置の構成例を、図1、図2により説明する。図1において、プラズマエッチング装置の処理ユニット23、25は、処理室50を備えており、その内部に、被処理物である試料2が載置される試料台100を含むステージ51が設けられている。処理室50内には、処理ガス導入口55から処理用ガスが供給される。この処理室50の内側では、処理用ガスが、ガス供給装置から平板形状の分散プレートに供給され、複数の貫通孔から分散されて処理室50内に供給される。52は電磁波放射手段の電磁波源であり、この電磁波源から放射された電磁波が処理室50内に導かれ前記処理ガスに放射されることにより処理室50内に試料を処理するためのプラズマが生成される。この電磁波源52からの電磁波は、導波管を伝播して処理室内に放射される。コントローラ60は、電磁波源52やガス供給装置その他プラズマエッチング装置の全体の動作を制御するものである。本実施例では、特に、伝熱ガス圧力を制御する伝熱ガス圧力調節機能や、基板バイアスを制御する基板バイアス制御機能を備えており、また、エッチング終点検出器などにより検出された基板面の状況や処理時間に基いて判断される試料に対するエッチング処理の進行状況に応じてエッチングの処理条件を変更する機能を有している。本実施例の装置では、これらの機能を備えていることにより、以下に述べるように、高いアスペクト比の処理やスループットの大きな処理を行うことが可能になる。
次に、本発明の第2の実施例を説明する。
第1の実施例では伝熱ガス圧力調節機能によりデポ(反応生成物)の輸送能力の切替え制御を行ったが、第2の実施例として、このデポ(反応生成物)の輸送能力は、基板バイアス制御機能によっても制御できる。この場合も、基板バイアスの切替えは膜の界面の近傍で行う。
本発明は、ダマシン構造の多層膜のエッチングにも適用できる。例えば、図12に示すように、第一の酸化膜402と第二の酸化膜404の間に第1のストッパー層403が介在する場合、前記実施形態のメインエッチング工程の処理条件と同様にしてレジスト401のマスクパターンに沿って第一の酸化膜を加工してホール407を形成し(a)〜(b)、第1のストッパー層403をオーバーエッチング工程の処理条件で加工し(c)、さらに第二の酸化膜404及びエッチングストップ膜405を同様にして、メインエッチング工程及びオーバーエッチング工程の条件で順次加工すればよい。本実施例によれば、ストッパー層403やエッチングストップ膜405を削り過ぎてしまったり、切替わるまでの条件が変動してメインエッチング工程で所望の形状が得られない、という問題も抑制できる。
本発明の前記各実施例において実現しようとする目標の(所望の)温度分布の例が図14に示されている。この図において、試料2の表面の温度は、試料の中心からある半径上の位置まではほぼ一定温度で、ある半径上の位置を鋭角の変曲点として、それ以上の半径上の位置では半径の大きさに比例して温度は下がる分布となっている。試料2の表面の温度分布は、処理後の試料の形状の分布と、処理後の試料の形状と冷媒温度あるいは試料台の温度、及びバイアス電圧との関係で制御される。
Claims (10)
- 内部が減圧される真空容器と、この真空容器の内部に配置され処理対象の試料がその上に載置される試料台とを有し、前記試料台上方の前記真空容器内部の空間に供給される処理ガスおよび電界とを用いて形成したプラズマにより前記試料表面に配置された複数層の膜を所定の形状にエッチング処理する真空処理装置であって、前記試料台上の試料載置面と試料の裏面との間に伝熱用ガスを供給する伝熱用ガス供給手段を備えたものにおいて、
前記試料載置面と前記試料の裏面の間に供給される前記伝熱用ガスの圧力を、前記試料の複数層の膜の処理の進行に応じて、段階的に変化させる伝熱用ガス圧力調節機能を備えた真空処理装置。 - 請求項1に記載の真空処理装置であって、前記伝熱用ガス圧力調節機能は、前記複数層の膜の相互の界面もしくはその近傍に達した際に、前記圧力を段階的に低下させる機能を備えた真空処理装置。
- 請求項1または2に記載の真空処理装置であって、前記伝熱用ガスを前記試料載置面に供給される導入路を有し、
前記伝熱用ガス圧力調節機能は、前記伝熱用ガスが導入路に連通して該導入路内の前記伝熱用ガスを排出するための排出路上に配置され開度を段階的に調節可能なバルブを備えた真空処理装置。 - 請求項3に記載の真空処理装置であって、前記伝熱用ガス圧力調節機能は、流路にバルブを有しオリフィスの無い粗引きラインと、流路にバルブ及びオリフィスを有する微調整ラインを1組として構成されている真空処理装置。
- 内部が減圧される真空容器と、この真空容器の内部に配置され基板電極を構成すると共に処理対象の試料がその上に載置される試料台とを有し、前記試料台上方の前記真空容器内部の空間に供給される処理ガスおよび電界とを用いて形成したプラズマにより前記試料表面に配置された複数層の膜を所定の形状にエッチング処理する真空処理装置であって、前記試料台上の試料載置面と試料の裏面との間に伝熱用ガスを供給する伝熱用ガス供給手段及び前記基板電極に接続された基板バイアス電源を備えたものにおいて、
前記試料載置面と前記試料の裏面の間に供給される前記伝熱用ガスの圧力を、前記試料の複数層の膜の処理の進行に応じて、段階的に変化させる伝熱用ガス圧力調節機能と、前記基板バイアス電源の出力を、前記試料の複数層の膜の処理の進行に応じて、段階的に変化させる基板バイアス制御機能とを備えた真空処理装置。 - 請求項5に記載の真空処理装置であって、前記伝熱用ガス圧力調節機能は、前記複数層の膜の相互の界面もしくはその近傍に達した際に、前記圧力を段階的に低下させる機能を備え、前記基板バイアス制御機能は、前記基板バイアスを段階的に高くする機能を備えた真空処理装置。
- 減圧される真空容器内に配置された試料台上の試料載置面に処理対象の試料を載置して、前記試料台上方の前記真空容器内部の空間に処理ガスおよび電界とを供給してプラズマを形成し、前記試料表面に配置された複数層の膜を所定の形状にエッチング処理する真空処理方法であって、
前記試料載置面と前記試料の裏面との間に伝熱用ガスを供給すると共に、
前記伝熱用ガスの圧力を、前記試料の複数層の膜の処理の進行に応じて、段階的に変化させる真空処理方法。 - 請求項7に記載の真空処理方法であって、前記複数層の膜の相互の界面の近傍に達した際に前記圧力を段階的に低下させる真空処理方法。
- 請求項7または8に記載の真空処理方法であって、
前記伝熱用ガスの圧力を、前記伝熱用ガスの供給経路の途中から排出される量を前記処理中に段階的に増減することにより調節する試料の真空処理方法。 - 請求項7〜9のいずれかに記載の真空処理方法であって、前記試料の複数層の膜が、ダマシン構造を含む試料の真空処理方法。
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