JP4694249B2 - 真空処理装置及び試料の真空処理方法 - Google Patents
真空処理装置及び試料の真空処理方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 153
- 238000003672 processing method Methods 0.000 title claims description 16
- 238000012546 transfer Methods 0.000 claims description 83
- 238000005530 etching Methods 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 41
- 230000001965 increasing effect Effects 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 10
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 4
- 239000002365 multiple layer Substances 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 97
- 239000000758 substrate Substances 0.000 description 33
- 239000007795 chemical reaction product Substances 0.000 description 24
- 238000009826 distribution Methods 0.000 description 21
- 239000003507 refrigerant Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 11
- 230000007547 defect Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000004044 response Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 230000001976 improved effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000035587 bioadhesion Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
すなわち、複数層の膜を処理する場合において、2つの膜の途中の所望の形状の状態において処理を切替えて次の処理を行おうとする場合で、前後の処理の温度条件が異なるものでは、迅速に温度を変更することが必要となるが、従来の技術ではこの温度を変更するために必要な時間が長いので、この間処理を停止したり、処理速度を遅くしたりする必要が生じ、処理の効率が低下してしまう。或いは、温度の変化の間に処理が進行し過ぎて所望のものから大きく外れた形状となってしまう。
前記伝熱用ガスの圧力を、前記伝熱用ガスが低流量で外部に排出される微調整用の第一の流路及び前記伝熱用ガスが速やかに外部に排出される第二の流路を有する排出経路から排出して前記試料の複数層の膜の処理の進行に応じて段階的に変化させるステップであって前記試料の処理中に前記第二の流路の前記伝熱用ガスの流れを閉状態から開状態へのステップ的な切替えによる排出を動作させて前記伝熱用ガスの圧力を変化させることにより達成される。さらに、前記複数層の膜の相互の界面の近傍に達した際に前記伝熱用ガスの排出を前記第二の流路に切り替えて前記圧力を段階的に変化させることにより達成される。
本発明の第1の実施例を、図1〜図10で説明する。
まず、本発明を適用したプラズマエッチング装置の構成例を、図1、図2により説明する。図1において、プラズマエッチング装置の処理ユニット23、25は、処理室50を備えており、その内部に、被処理物である試料2が載置される試料台100を含むステージ51が設けられている。処理室50内には、処理ガス導入口55から処理用ガスが供給される。この処理室50の内側では、処理用ガスが、ガス供給装置から平板形状の分散プレートに供給され、複数の貫通孔から分散されて処理室50内に供給される。52は電磁波放射手段の電磁波源であり、この電磁波源から放射された電磁波が処理室50内に導かれ前記処理ガスに放射されることにより処理室50内に試料を処理するためのプラズマが生成される。この電磁波源52からの電磁波は、導波管を伝播して処理室内に放射される。コントローラ60は、電磁波源52やガス供給装置その他プラズマエッチング装置の全体の動作を制御するものである。本実施例では、特に、伝熱ガス圧力を制御する伝熱ガス圧力調節機能や、基板バイアスを制御する基板バイアス制御機能を備えており、また、エッチング終点検出器などにより検出された基板面の状況や処理時間に基いて判断される試料に対するエッチング処理の進行状況に応じてエッチングの処理条件を変更する機能を有している。本実施例の装置では、これらの機能を備えていることにより、以下に述べるように、高いアスペクト比の処理やスループットの大きな処理を行うことが可能になる。
次に、本発明の第2の実施例を説明する。
第1の実施例では伝熱ガス圧力調節機能によりデポ(反応生成物)の輸送能力の切替え制御を行ったが、第2の実施例として、このデポ(反応生成物)の輸送能力は、基板バイアス制御機能によっても制御できる。この場合も、基板バイアスの切替えは膜の界面の近傍で行う。
本発明は、ダマシン構造の多層膜のエッチングにも適用できる。例えば、図12に示すように、第一の酸化膜402と第二の酸化膜404の間に第1のストッパー層403が介在する場合、前記実施形態のメインエッチング工程の処理条件と同様にしてレジスト401のマスクパターンに沿って第一の酸化膜を加工してホール407を形成し(a)〜(b)、第1のストッパー層403をオーバーエッチング工程の処理条件で加工し(c)、さらに第二の酸化膜404及びエッチングストップ膜405を同様にして、メインエッチング工程及びオーバーエッチング工程の条件で順次加工すればよい。本実施例によれば、ストッパー層403やエッチングストップ膜405を削り過ぎてしまったり、切替わるまでの条件が変動してメインエッチング工程で所望の形状が得られない、という問題も抑制できる。
本発明の前記各実施例において実現しようとする目標の(所望の)温度分布の例が図14に示されている。この図において、試料2の表面の温度は、試料の中心からある半径上の位置まではほぼ一定温度で、ある半径上の位置を鋭角の変曲点として、それ以上の半径上の位置では半径の大きさに比例して温度は下がる分布となっている。試料2の表面の温度分布は、処理後の試料の形状の分布と、処理後の試料の形状と冷媒温度あるいは試料台の温度、及びバイアス電圧との関係で制御される。
Claims (10)
- 内部が減圧される真空容器と、この真空容器の内部の空間に配置され処理対象の試料がその上面に載置される試料台と、この試料台上で前記試料を静電的に吸着させるチャックとを有し、前記試料台上方の前記真空容器内部の空間に供給される処理ガスおよび電界とを用いて形成したプラズマにより前記試料表面に配置された複数層の膜を所定の形状にエッチング処理する真空処理装置であって、
前記試料台上の試料載置面とこの上に吸着された前記試料の裏面との問の所定の空間に供給される伝熱用ガスを供給する供給経路と、この供給経路を通り供給される伝熱用ガスが前記試料の処理中に外部に排出される排出経路であって前記伝熱用ガスが低流量で排出される微調整用の第一の流路及び前記伝熱用ガスが速やかに排出される第二の流路を有する排出経路と、前記試料の複数層の膜の処理の進行に応じて、前記試料の裏面の前記所定の空間の前記伝熱用ガスの圧力を調節する圧力調節装置であって、前記供給経路上で前記伝熱用ガスの供給を調節する供給調節器と、前記第二の流路上に配置されてこの流路の前記伝熱用ガスの流れを開状態と閉状態との間でステップ的に切替える手段と、前記試料の処理中に前記第二の流路の前記切替える手段による切替えを指令する手段とを有する圧力調節装置とを備えた真空処理装置。 - 請求項1に記載された真空処理装置であって、前記圧力調節装置は、前記膜のエッチングがこの膜の界面またはその近傍に達した際に前記第二の流路の前記切替える手段による切替えを行って前記圧力を段階的に低下させる機能を備えた真空処理装置。
- 請求項1または2に記載の真空処理装置であって、前記試料台内部に配置された電極に接続され前記エッチング処理中に電力を供給する電源と、前記電源の出力を前記試料の前記膜の処理の進行に応じて段階的に変化させる制御装置とを備え、前記制御装置は前記膜の界面またはその近傍に達した際に前記電力を段階的に増加させる真空処理装置。
- 請求項1乃至3のいずれかに記載された真空処理装置であって、前記排気経路の前記第二の流路が前記供給経路と連通された真空処理装置。
- 請求項1乃至4のいずれかに記載された真空処理装置であって、前記排出経路の前記第一の流路は開度を段階的に調節可能なバルブとオリフィスとを有し、前記第二の流路はオリフィスを有さない真空処理装置。
- 減圧される真空容器内に配置された試料台上の試料載置面に処理対象の試料を載置して、前記試料台上方の前記真空容器内部の空間に処理ガスおよび電界を供給してプラズマを形成し、前記試料表面に配置された複数層の膜を所定の形状にエッチング処理する真空処理方法であって、
前記試料の処理中に前記試料載置面と前記試料の裏面との問に伝熱用ガスを供給すると共に、
前記伝熱用ガスの圧力を、前記伝熱用ガスが低流量で外部に排出される微調整用の第一の流路及び前記伝熱用ガスが速やかに外部に排出される第二の流路を有する排出経路から排出して前記試料の複数層の膜の処理の進行に応じて段階的に変化させるステップであって前記試料の処理中に前記第二の流路の前記伝熱用ガスの流れを閉状態から開状態へのステップ的な切替えによる排出を動作させて前記伝熱用ガスの圧力を変化させる真空処理方法。 - 請求項6に記載の真空処理方法であって、前記複数層の膜の相互の界面の近傍に達した際に前記伝熱用ガスの排出を前記第二の流路に切り替えて前記圧力を段階的に変化させる真空処理方法。
- 請求項6または7に記載の真空処理方法であって、前記伝熱用ガスの庄力を、前記伝熱用ガスの供給経路の途中から排出される量を前記処理中に段階的に増減することにより調節する真空処理方法。
- 請求項6乃至8のいずれかに記載の真空処理方法であって、前記エッチング処理中に前記試料台内部に配置された電極に電力を供給する電源からの出力を前記膜の界面またはその近傍に達した際に段階的に増加させる真空処理方法。
- 請求項6乃至9の何れかに記載の真空処理方法であって、前記第一の流路は開度を段階的に調節可能なバルブとオリフィスとを有し、前記第二の流路はオリフィスを有さない真空処理方法。
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US11/696,922 US7947189B2 (en) | 2005-04-20 | 2007-04-05 | Vacuum processing apparatus and vacuum processing method of sample |
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JP5118354B2 (ja) * | 2007-02-19 | 2013-01-16 | 三菱重工業株式会社 | 真空処理装置および真空処理装置を用いた製膜方法 |
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