|
JP5396180B2
(ja)
*
|
2009-07-27 |
2014-01-22 |
東京エレクトロン株式会社 |
選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体
|
|
US20110065276A1
(en)
*
|
2009-09-11 |
2011-03-17 |
Applied Materials, Inc. |
Apparatus and Methods for Cyclical Oxidation and Etching
|
|
US20110061810A1
(en)
*
|
2009-09-11 |
2011-03-17 |
Applied Materials, Inc. |
Apparatus and Methods for Cyclical Oxidation and Etching
|
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
|
US8828883B2
(en)
*
|
2010-08-24 |
2014-09-09 |
Micron Technology, Inc. |
Methods and apparatuses for energetic neutral flux generation for processing a substrate
|
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
|
WO2012112187A1
(en)
*
|
2011-02-15 |
2012-08-23 |
Applied Materials, Inc. |
Method and apparatus for multizone plasma generation
|
|
US8404048B2
(en)
*
|
2011-03-11 |
2013-03-26 |
Applied Materials, Inc. |
Off-angled heating of the underside of a substrate using a lamp assembly
|
|
US9905443B2
(en)
|
2011-03-11 |
2018-02-27 |
Applied Materials, Inc. |
Reflective deposition rings and substrate processing chambers incorporating same
|
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
|
US8802545B2
(en)
*
|
2011-03-14 |
2014-08-12 |
Plasma-Therm Llc |
Method and apparatus for plasma dicing a semi-conductor wafer
|
|
US10049881B2
(en)
*
|
2011-08-10 |
2018-08-14 |
Applied Materials, Inc. |
Method and apparatus for selective nitridation process
|
|
JP6254098B2
(ja)
|
2012-02-13 |
2017-12-27 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
基板の選択性酸化のための方法および装置
|
|
US9530620B2
(en)
*
|
2013-03-15 |
2016-12-27 |
Lam Research Corporation |
Dual control modes
|
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
|
US9373517B2
(en)
*
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
|
US20140099794A1
(en)
*
|
2012-09-21 |
2014-04-10 |
Applied Materials, Inc. |
Radical chemistry modulation and control using multiple flow pathways
|
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
|
US8921234B2
(en)
|
2012-12-21 |
2014-12-30 |
Applied Materials, Inc. |
Selective titanium nitride etching
|
|
CN103887135B
(zh)
*
|
2012-12-24 |
2016-05-18 |
中国科学院微电子研究所 |
离子注入系统
|
|
US8970114B2
(en)
*
|
2013-02-01 |
2015-03-03 |
Lam Research Corporation |
Temperature controlled window of a plasma processing chamber component
|
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
|
US9564321B2
(en)
*
|
2013-03-11 |
2017-02-07 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Cyclic epitaxial deposition and etch processes
|
|
US9177787B2
(en)
*
|
2013-03-15 |
2015-11-03 |
Applied Materials, Inc. |
NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
|
|
TWI683382B
(zh)
*
|
2013-03-15 |
2020-01-21 |
應用材料股份有限公司 |
具有光學測量的旋轉氣體分配組件
|
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
|
CN104276764B
(zh)
*
|
2013-07-11 |
2017-03-22 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
玻璃衬底的工艺方法
|
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
|
JP2015056519A
(ja)
*
|
2013-09-12 |
2015-03-23 |
東京エレクトロン株式会社 |
エッチング方法、エッチング装置及び記憶媒体
|
|
US8980758B1
(en)
*
|
2013-09-17 |
2015-03-17 |
Applied Materials, Inc. |
Methods for etching an etching stop layer utilizing a cyclical etching process
|
|
US20150079799A1
(en)
*
|
2013-09-17 |
2015-03-19 |
Applied Materials, Inc. |
Method for stabilizing an interface post etch to minimize queue time issues before next processing step
|
|
KR101862632B1
(ko)
*
|
2013-09-25 |
2018-05-31 |
캐논 아네르바 가부시키가이샤 |
자기 저항 효과 소자의 제조 방법 및 제조 시스템
|
|
JP6043968B2
(ja)
|
2013-10-30 |
2016-12-14 |
パナソニックIpマネジメント株式会社 |
プラズマ処理方法並びに電子デバイスの製造方法
|
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
|
US9245762B2
(en)
|
2013-12-02 |
2016-01-26 |
Applied Materials, Inc. |
Procedure for etch rate consistency
|
|
JP6405958B2
(ja)
*
|
2013-12-26 |
2018-10-17 |
東京エレクトロン株式会社 |
エッチング方法、記憶媒体及びエッチング装置
|
|
US9499898B2
(en)
|
2014-03-03 |
2016-11-22 |
Applied Materials, Inc. |
Layered thin film heater and method of fabrication
|
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
|
CN106463344B
(zh)
*
|
2014-05-16 |
2019-10-11 |
应用材料公司 |
喷头设计
|
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
|
US9553102B2
(en)
|
2014-08-19 |
2017-01-24 |
Applied Materials, Inc. |
Tungsten separation
|
|
US9753463B2
(en)
*
|
2014-09-12 |
2017-09-05 |
Applied Materials, Inc. |
Increasing the gas efficiency for an electrostatic chuck
|
|
US9478434B2
(en)
|
2014-09-24 |
2016-10-25 |
Applied Materials, Inc. |
Chlorine-based hardmask removal
|
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
|
US11637002B2
(en)
*
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
|
US12281385B2
(en)
*
|
2015-06-15 |
2025-04-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Gas dispenser and deposition apparatus using the same
|
|
JP6818402B2
(ja)
|
2015-07-17 |
2021-01-20 |
株式会社日立ハイテク |
プラズマ処理装置
|
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
|
JP6615544B2
(ja)
*
|
2015-09-14 |
2019-12-04 |
株式会社東芝 |
流量調整装置及び処理装置
|
|
US9543419B1
(en)
|
2015-09-18 |
2017-01-10 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
FinFET structures and methods of forming the same
|
|
CN106548936B
(zh)
*
|
2015-09-23 |
2022-04-22 |
北京北方华创微电子装备有限公司 |
一种金属层的刻蚀方法
|
|
KR20170043936A
(ko)
*
|
2015-10-14 |
2017-04-24 |
현대자동차주식회사 |
블랭크 가열 장치
|
|
US10203604B2
(en)
|
2015-11-30 |
2019-02-12 |
Applied Materials, Inc. |
Method and apparatus for post exposure processing of photoresist wafers
|
|
CN107248515B
(zh)
*
|
2016-03-24 |
2020-06-16 |
上海新昇半导体科技有限公司 |
真空管闪存结构及其制造方法
|
|
CN109075075B
(zh)
*
|
2016-04-05 |
2023-06-06 |
Tes股份有限公司 |
硅氧化膜的选择性蚀刻方法
|
|
US10325790B2
(en)
*
|
2016-04-29 |
2019-06-18 |
Applied Materials, Inc. |
Methods and apparatus for correcting substrate deformity
|
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
|
US9958782B2
(en)
*
|
2016-06-29 |
2018-05-01 |
Applied Materials, Inc. |
Apparatus for post exposure bake
|
|
US10872760B2
(en)
*
|
2016-07-26 |
2020-12-22 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Cluster tool and manufacuturing method of semiconductor structure using the same
|
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
|
US9964863B1
(en)
*
|
2016-12-20 |
2018-05-08 |
Applied Materials, Inc. |
Post exposure processing apparatus
|
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
|
US10224212B2
(en)
*
|
2017-01-27 |
2019-03-05 |
Lam Research Corporation |
Isotropic etching of film with atomic layer control
|
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
|
TWI729121B
(zh)
*
|
2017-05-01 |
2021-06-01 |
聯華電子股份有限公司 |
用於快速加熱製程的方法與反應腔室
|
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
|
JP7176860B6
(ja)
|
2017-05-17 |
2022-12-16 |
アプライド マテリアルズ インコーポレイテッド |
前駆体の流れを改善する半導体処理チャンバ
|
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
|
JP6957252B2
(ja)
|
2017-07-20 |
2021-11-02 |
岩谷産業株式会社 |
切断加工方法
|
|
JP6925900B2
(ja)
|
2017-07-20 |
2021-08-25 |
岩谷産業株式会社 |
切断加工方法
|
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
|
TWI872604B
(zh)
*
|
2018-01-24 |
2025-02-11 |
美商應用材料股份有限公司 |
腔室入口組件、入口構件及包括此腔室入口組件的基板處理系統
|
|
KR102024568B1
(ko)
*
|
2018-02-13 |
2019-09-24 |
한국기초과학지원연구원 |
환형 면방전 플라즈마 장치를 이용한 점상 식각 모듈 및 점상 식각 모듈의 식각 프로파일을 제어하는 방법
|
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
|
TWI766433B
(zh)
|
2018-02-28 |
2022-06-01 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
|
US10612151B2
(en)
*
|
2018-02-28 |
2020-04-07 |
Lam Research Corporation |
Flow assisted dynamic seal for high-convection, continuous-rotation plating
|
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
|
CN110391120B
(zh)
*
|
2018-04-17 |
2022-02-22 |
北京北方华创微电子装备有限公司 |
一种喷头和等离子体处理腔室
|
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
|
JP7204348B2
(ja)
*
|
2018-06-08 |
2023-01-16 |
東京エレクトロン株式会社 |
エッチング方法およびエッチング装置
|
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
|
US10892136B2
(en)
*
|
2018-08-13 |
2021-01-12 |
Varian Semiconductor Equipment Associates, Inc. |
Ion source thermal gas bushing
|
|
WO2020035478A1
(en)
*
|
2018-08-15 |
2020-02-20 |
Evatec Ag |
Method and apparatus for low particle plasma etching
|
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
|
CN112703588A
(zh)
*
|
2018-09-24 |
2021-04-23 |
应用材料公司 |
用于清洁和表面处理的原子氧和臭氧装置
|
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|
|
JP7202230B2
(ja)
|
2019-03-20 |
2023-01-11 |
株式会社Screenホールディングス |
基板処理方法および基板処理装置
|
|
WO2020100338A1
(ja)
*
|
2019-06-21 |
2020-05-22 |
株式会社日立ハイテク |
プラズマ処理方法
|
|
JP2021017602A
(ja)
*
|
2019-07-17 |
2021-02-15 |
コニカミノルタ株式会社 |
微細構造体の製造方法及び微細構造体の製造装置
|
|
US12359313B2
(en)
*
|
2019-07-31 |
2025-07-15 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Deposition apparatus and method of forming metal oxide layer using the same
|
|
CN120854251A
(zh)
*
|
2020-07-02 |
2025-10-28 |
北京屹唐半导体科技股份有限公司 |
工件的加工
|
|
TWI874690B
(zh)
*
|
2020-08-12 |
2025-03-01 |
日商東京威力科創股份有限公司 |
蝕刻方法及電漿蝕刻裝置
|
|
KR102501331B1
(ko)
*
|
2020-09-08 |
2023-02-17 |
세메스 주식회사 |
플라즈마를 이용한 기판 처리 장치 및 방법
|
|
US11584993B2
(en)
|
2020-10-19 |
2023-02-21 |
Applied Materials, Inc. |
Thermally uniform deposition station
|
|
CN112371452B
(zh)
*
|
2020-11-04 |
2022-03-18 |
上海华力集成电路制造有限公司 |
半导体制造工艺环境的调风装置
|
|
CN114497089B
(zh)
*
|
2020-11-11 |
2025-09-12 |
上海华力微电子有限公司 |
一种通过sti刻蚀工艺改善hdp填充缺陷的方法
|
|
CN114639602A
(zh)
*
|
2020-12-15 |
2022-06-17 |
东京毅力科创株式会社 |
蚀刻方法和蚀刻装置
|
|
TWI786566B
(zh)
*
|
2021-03-11 |
2022-12-11 |
南亞科技股份有限公司 |
半導體結構製造方法與半導體結構製造系統
|
|
KR102752567B1
(ko)
*
|
2022-12-13 |
2025-01-10 |
세메스 주식회사 |
기판 처리 장치 및 방법
|
|
KR20250163668A
(ko)
*
|
2024-05-14 |
2025-11-21 |
피에스케이 주식회사 |
기판 처리 방법, 제조 방법 및 기판 처리 장치
|