JP2013521621A5 - - Google Patents
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- Publication number
- JP2013521621A5 JP2013521621A5 JP2012556203A JP2012556203A JP2013521621A5 JP 2013521621 A5 JP2013521621 A5 JP 2013521621A5 JP 2012556203 A JP2012556203 A JP 2012556203A JP 2012556203 A JP2012556203 A JP 2012556203A JP 2013521621 A5 JP2013521621 A5 JP 2013521621A5
- Authority
- JP
- Japan
- Prior art keywords
- electrochemically active
- lithium ion
- layer
- active material
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims 29
- 229910001416 lithium ion Inorganic materials 0.000 claims 29
- 239000011262 electrochemically active material Substances 0.000 claims 27
- 239000007772 electrode material Substances 0.000 claims 21
- 239000002086 nanomaterial Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 20
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 229910021332 silicide Inorganic materials 0.000 claims 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 18
- 238000000034 method Methods 0.000 claims 9
- 239000002070 nanowire Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 7
- 229910021334 nickel silicide Inorganic materials 0.000 claims 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- 239000002243 precursor Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 2
- 239000011149 active material Substances 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000004891 communication Methods 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 2
- 229910052744 lithium Inorganic materials 0.000 claims 2
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910001200 Ferrotitanium Inorganic materials 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910005883 NiSi Inorganic materials 0.000 claims 1
- 229910005881 NiSi 2 Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 claims 1
- LKTZODAHLMBGLG-UHFFFAOYSA-N alumanylidynesilicon;$l^{2}-alumanylidenesilylidenealuminum Chemical compound [Si]#[Al].[Si]#[Al].[Al]=[Si]=[Al] LKTZODAHLMBGLG-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910021357 chromium silicide Inorganic materials 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910021360 copper silicide Inorganic materials 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000001351 cycling effect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000006138 lithiation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000006722 reduction reaction Methods 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 150000003568 thioethers Chemical class 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31018310P | 2010-03-03 | 2010-03-03 | |
| US61/310,183 | 2010-03-03 | ||
| PCT/US2011/026816 WO2011109477A2 (en) | 2010-03-03 | 2011-03-02 | Template electrode structures for depositing active materials |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016077671A Division JP6494558B2 (ja) | 2010-03-03 | 2016-04-07 | 電極および電気化学的に活性な電極材料 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013521621A JP2013521621A (ja) | 2013-06-10 |
| JP2013521621A5 true JP2013521621A5 (enExample) | 2014-04-17 |
| JP5918150B2 JP5918150B2 (ja) | 2016-05-18 |
Family
ID=44542814
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012556203A Active JP5918150B2 (ja) | 2010-03-03 | 2011-03-02 | 活性材料を堆積させるためのテンプレート電極構造 |
| JP2016077671A Active JP6494558B2 (ja) | 2010-03-03 | 2016-04-07 | 電極および電気化学的に活性な電極材料 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016077671A Active JP6494558B2 (ja) | 2010-03-03 | 2016-04-07 | 電極および電気化学的に活性な電極材料 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US8257866B2 (enExample) |
| EP (1) | EP2543098B1 (enExample) |
| JP (2) | JP5918150B2 (enExample) |
| KR (2) | KR101906606B1 (enExample) |
| CN (2) | CN102844917B (enExample) |
| WO (1) | WO2011109477A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11855279B2 (en) | 2014-05-12 | 2023-12-26 | Amprius Technologies, Inc. | Structurally controlled deposition of silicon onto nanowires |
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| US10205166B2 (en) | 2008-02-25 | 2019-02-12 | Cf Traverse Llc | Energy storage devices including stabilized silicon |
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| US11233234B2 (en) | 2008-02-25 | 2022-01-25 | Cf Traverse Llc | Energy storage devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US11855279B2 (en) | 2014-05-12 | 2023-12-26 | Amprius Technologies, Inc. | Structurally controlled deposition of silicon onto nanowires |
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