JP2013521621A5 - - Google Patents
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- JP2013521621A5 JP2013521621A5 JP2012556203A JP2012556203A JP2013521621A5 JP 2013521621 A5 JP2013521621 A5 JP 2013521621A5 JP 2012556203 A JP2012556203 A JP 2012556203A JP 2012556203 A JP2012556203 A JP 2012556203A JP 2013521621 A5 JP2013521621 A5 JP 2013521621A5
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- electrochemically active
- lithium ion
- layer
- active material
- silicide
- Prior art date
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- 229910001416 lithium ion Inorganic materials 0.000 claims 29
- 239000011262 electrochemically active material Substances 0.000 claims 27
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium Ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims 25
- 239000007772 electrode material Substances 0.000 claims 21
- 239000002086 nanomaterial Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 20
- 229910021332 silicide Inorganic materials 0.000 claims 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 19
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 239000002070 nanowire Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 7
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N Nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 4
- 229910021334 nickel silicide Inorganic materials 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims 3
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 claims 2
- 239000011149 active material Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 2
- 229910052744 lithium Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910001200 Ferrotitanium Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910005883 NiSi Inorganic materials 0.000 claims 1
- 229910005881 NiSi 2 Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910021357 chromium silicide Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052803 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910021360 copper silicide Inorganic materials 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 230000001351 cycling Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- XCCANNJCMHMXBZ-UHFFFAOYSA-N hydroxyiminosilicon Chemical compound ON=[Si] XCCANNJCMHMXBZ-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000006138 lithiation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000006722 reduction reaction Methods 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 150000003568 thioethers Chemical class 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Claims (33)
- リチウムイオン電池で利用される電気化学的に活性な電極材料であって、
金属シリサイドを有するナノ構造テンプレートと、
前記ナノ構造テンプレートをコーティングしている電気化学的に活性な材料の層と
を備え、
前記電気化学的に活性な材料は、前記リチウムイオン電池のサイクル時に、リチウムイオンを取り込み放出し、
前記ナノ構造テンプレートによって、前記電気化学的に活性な材料との間での電流の伝導が円滑化され、前記電気化学的に活性な材料の前記層が支持される電気化学的に活性な電極材料。 - 前記金属シリサイドは、ニッケルシリサイド、ケイ化コバルト、ケイ化銅、ケイ化銀、ケイ化クロム、ケイ化チタン、ケイ化アルミニウム、ケイ化亜鉛、および、ケイ化鉄から成る群から選択される請求項1に記載の電気化学的に活性な電極材料。
- 前記金属シリサイドは、Ni2Si相、NiSi相およびNiSi2相から成る群から選択される少なくとも2つの異なるニッケルシリサイド相を含む請求項2に記載の電気化学的に活性な電極材料。
- 前記電気化学的に活性な材料は、結晶質シリコン、アモルファスシリコン、シリコン酸化物、シリコン酸窒化物、スズ含有材料、ゲルマニウム含有材料、および、炭素含有材料から成る群から選択される請求項1から3のいずれか一項に記載の電気化学的に活性な電極材料。
- 前記ナノ構造テンプレートは、シリサイド含有ナノワイヤを有する請求項1から4のいずれか一項に記載の電気化学的に活性な電極材料。
- 前記シリサイド含有ナノワイヤは、長さが平均で1マイクロメートルと200マイクロメートルとの間である請求項5に記載の電気化学的に活性な電極材料。
- 前記シリサイド含有ナノワイヤは、直径が平均で100ナノメートル未満である請求項5に記載の電気化学的に活性な電極材料。
- 前記電気化学的に活性な材料の前記層は、厚みが平均で少なくとも100ナノメートルである請求項1から7のいずれか一項に記載の電気化学的に活性な電極材料。
- 前記電気化学的に活性な材料の前記テンプレートに対する体積比は少なくとも5である請求項1から8のいずれか一項に記載の電気化学的に活性な電極材料。
- 前記電気化学的に活性な材料の前記層は、アモルファスシリコンを含み、
前記層は、厚みが平均で少なくとも100ナノメートルであり、
前記ナノ構造テンプレートは、ニッケルシリサイドナノワイヤを含み、前記ニッケルシリサイドナノワイヤは、長さが平均で10マイクロメートルと50マイクロメートルとの間であり、直径が平均で50ナノメートル未満である請求項1に記載の電気化学的に活性な電極材料。 - 前記リチウムイオン電池において前記電気化学的に活性な電極材料のサイクルの前に、前記電気化学的に活性な材料の前記層は、リン、ホウ素、ガリウムおよびリチウムのうち1以上によってドープされる請求項1から10のいずれか一項に記載の電気化学的に活性な電極材料。
- 前記電気化学的に活性な材料の前記層の上方に形成されているシェルをさらに備え、
前記シェルは、炭素、銅、ポリマー、硫化物、リチウムリン酸窒化物(LIPON)、金属酸化物、および、フッ素含有化合物から成る群から選択された1以上の材料を含む
請求項1から11のいずれか一項に記載の電気化学的に活性な電極材料。 - 前記電気化学的に活性な材料は、理論上のリチオ化容量が少なくとも500mAh/gである請求項1から12のいずれか一項に記載の電気化学的に活性な電極材料。
- リチウムイオン電池で利用されるリチウムイオン電極であって、
電気化学的に活性な電極材料と、
前記電気化学的に活性な電極材料と導通している電流コレクタ基板と
を備え、
前記電気化学的に活性な電極材料は、
金属シリサイドを含むナノ構造テンプレートと、
前記ナノ構造テンプレートをコーティングする電気化学的に活性な材料の層と
を有し、
前記電気化学的に活性な材料は、前記リチウムイオン電池のサイクル時に、リチウムイオンを取り込んで放出し、
前記ナノ構造テンプレートによって、前記電気化学的に活性な材料との間の電流の伝導が円滑化され、
前記電流コレクタ基板は、前記金属シリサイドの金属を含むリチウムイオン電極。 - 前記ナノ構造テンプレートは、前記基板に根付いているナノワイヤを含み、前記ナノワイヤは、遊離している端部と、前記基板に根付いている端部とを持つ請求項14に記載のリチウムイオン電極。
- 前記電気化学的に活性な材料の前記層は、前記ナノワイヤの前記基板に根付いている端部に比べて前記遊離している端部において、厚みが少なくとも2倍である請求項15に記載のリチウムイオン電極。
- 前記電気化学的に活性な材料の前記層は、アモルファスシリコンおよびゲルマニウムを含み、
前記層は、前記ナノワイヤの前記基板に根付いている端部に比べて前記遊離している端部において、シリコンがより多く、ゲルマニウムがより少なくなっている請求項15に記載のリチウムイオン電極。 - 前記ナノ構造テンプレートと前記電流コレクタ基板との間に位置しており、前記ナノ構造テンプレートと前記電流コレクタ基板との間の金属結合および電子伝導を改善する中間副層をさらに備える請求項14から17のいずれか一項に記載のリチウムイオン電極。
- 前記ナノ構造テンプレートと前記電気化学的に活性な材料の前記層との間に位置しており、前記ナノ構造テンプレートと前記電気化学的に活性な材料の前記層との間の金属結合および電子伝導を改善する中間副層をさらに備える請求項14から18のいずれか一項に記載のリチウムイオン電極。
- 前記ナノ構造テンプレートと前記電気化学的に活性な材料の前記層との間に位置しており、前記ナノ構造テンプレートと前記電気化学的に活性な材料の前記層との間の弾性界面となる中間副層をさらに備える請求項14から18のいずれか一項に記載のリチウムイオン電極。
- 前記ナノ構造テンプレートの表面積の前記基板の表面積に対する比は、少なくとも20である請求項14から20のいずれか一項に記載のリチウムイオン電極。
- 前記基板は、前記基板に隣接している基部層を有しており、前記基部層は、前記金属シリサイドの金属を略含まない請求項14から21のいずれか一項に記載のリチウムイオン電極。
- 前記基板は、銅、ニッケル、チタン、および、ステンレススチールから成る群から選択される1以上の材料を含む請求項14から22のいずれか一項に記載のリチウムイオン電極。
- 前記リチウムイオン電極は、負極である
請求項14から23のいずれか一項に記載のリチウムイオン電極。 - 前記リチウムイオン電極は、正極である
請求項14から23のいずれか一項に記載のリチウムイオン電極。 - 電気化学的に活性な電極材料と、
前記電気化学的に活性な電極材料と導通している電流コレクタ基板と
を備えるリチウムイオン電池であって、
前記電気化学的に活性な電極材料は、
金属シリサイドを含むナノ構造テンプレートと、
前記ナノ構造テンプレートをコーティングしている電気化学的に活性な材料の層と
を有し、
前記電気化学的に活性な材料は、前記リチウムイオン電池のサイクル時にリチウムイオンを取り込んで放出し、
前記ナノ構造テンプレートは、前記電気化学的に活性な材料との間で電流の伝導を円滑化させ、
前記電流コレクタ基板は、前記金属シリサイドの金属を含むリチウムイオン電池。 - リチウムイオン電池で利用されるリチウムイオン電池電極を製造する方法であって、
基板を受け取る段階と、
前記基板の表面上に金属シリサイドを含むナノ構造テンプレートを形成する段階と、
前記ナノ構造テンプレート上に電気化学的に活性な材料の層を形成する段階と
を備え、
前記電気化学的に活性な材料は、前記リチウムイオン電池のサイクル時にリチウムイオンを取り込んで放出し、
前記ナノ構造テンプレートは、前記電気化学的に活性な材料との間で電流の伝導を円滑化させる方法。 - 前記金属シリサイドを含むナノ構造テンプレートを形成する段階の前に、酸化、アニーリング、還元、粗面化、スパッタリング、エッチング、電気メッキ、反転電気メッキ、化学気相成長、窒化物形成、および、中間層堆積から成る群から選択される1以上の方法を用いて前記基板を処理する段階をさらに備える請求項27に記載の方法。
- 前記基板の前記表面上に金属部を形成する段階をさらに備え、
前記金属部の一部分は、前記金属シリサイドを形成する際に消費される請求項27または28に記載の方法。 - 前記ナノ構造テンプレートを形成する段階は、前記基板の前記表面の上方にシリコン含有前駆体を導入する段階を有する請求項27から29のいずれか一項に記載の方法。
- 前記電気化学的に活性な材料の前記層を形成する段階の前に、前記ナノ構造テンプレートの上方にパッシベーション層を選択的に堆積させる段階をさらに備える請求項27から30のいずれか一項に記載の方法。
- 前記電気化学的に活性な材料の前記層を形成する段階は、前記ナノ構造テンプレートの遊離している端部に比べて前記基板の前記表面において、活性材料前駆体の濃度が大幅に低くなるように、物質移動方式で実行される請求項27から31のいずれか一項に記載の方法。
- 前記電気化学的に活性な材料の前記層を形成している段階の実行中、活性材料前駆体の組成を変化させる段階をさらに備える請求項27から32のいずれか一項に記載の方法。
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US31018310P | 2010-03-03 | 2010-03-03 | |
US61/310,183 | 2010-03-03 | ||
PCT/US2011/026816 WO2011109477A2 (en) | 2010-03-03 | 2011-03-02 | Template electrode structures for depositing active materials |
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JP2013521621A JP2013521621A (ja) | 2013-06-10 |
JP2013521621A5 true JP2013521621A5 (ja) | 2014-04-17 |
JP5918150B2 JP5918150B2 (ja) | 2016-05-18 |
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JP2012556203A Active JP5918150B2 (ja) | 2010-03-03 | 2011-03-02 | 活性材料を堆積させるためのテンプレート電極構造 |
JP2016077671A Active JP6494558B2 (ja) | 2010-03-03 | 2016-04-07 | 電極および電気化学的に活性な電極材料 |
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US (5) | US8257866B2 (ja) |
EP (1) | EP2543098B1 (ja) |
JP (2) | JP5918150B2 (ja) |
KR (2) | KR101906606B1 (ja) |
CN (2) | CN105206794B (ja) |
WO (1) | WO2011109477A2 (ja) |
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US11855279B2 (en) | 2014-05-12 | 2023-12-26 | Amprius Technologies, Inc. | Structurally controlled deposition of silicon onto nanowires |
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US10056602B2 (en) | 2009-02-25 | 2018-08-21 | Cf Traverse Llc | Hybrid energy storage device production |
US9412998B2 (en) | 2009-02-25 | 2016-08-09 | Ronald A. Rojeski | Energy storage devices |
US10727481B2 (en) | 2009-02-25 | 2020-07-28 | Cf Traverse Llc | Energy storage devices |
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