JP2013501362A5 - - Google Patents

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JP2013501362A5
JP2013501362A5 JP2012523170A JP2012523170A JP2013501362A5 JP 2013501362 A5 JP2013501362 A5 JP 2013501362A5 JP 2012523170 A JP2012523170 A JP 2012523170A JP 2012523170 A JP2012523170 A JP 2012523170A JP 2013501362 A5 JP2013501362 A5 JP 2013501362A5
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Japan
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drain
bonding
copper
reduces
packaging
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JP2012523170A
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JP2013501362A (ja
JP5985393B2 (ja
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Priority claimed from PCT/CA2010/001202 external-priority patent/WO2011014951A1/en
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JP2012523170A 2009-08-04 2010-08-04 アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ Active JP5985393B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23113909P 2009-08-04 2009-08-04
US61/231,139 2009-08-04
PCT/CA2010/001202 WO2011014951A1 (en) 2009-08-04 2010-08-04 Island matrixed gallium nitride microwave and power switching transistors

Publications (3)

Publication Number Publication Date
JP2013501362A JP2013501362A (ja) 2013-01-10
JP2013501362A5 true JP2013501362A5 (enExample) 2016-02-25
JP5985393B2 JP5985393B2 (ja) 2016-09-06

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JP2012523170A Active JP5985393B2 (ja) 2009-08-04 2010-08-04 アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ

Country Status (7)

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US (1) US9064947B2 (enExample)
EP (1) EP2465141B1 (enExample)
JP (1) JP5985393B2 (enExample)
KR (1) KR20120041237A (enExample)
AU (1) AU2010281317A1 (enExample)
CA (1) CA2769940C (enExample)
WO (1) WO2011014951A1 (enExample)

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