JP2013033944A - 駆動回路、当該駆動回路の作製方法および当該駆動回路を用いた表示装置 - Google Patents
駆動回路、当該駆動回路の作製方法および当該駆動回路を用いた表示装置 Download PDFInfo
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- JP2013033944A JP2013033944A JP2012140438A JP2012140438A JP2013033944A JP 2013033944 A JP2013033944 A JP 2013033944A JP 2012140438 A JP2012140438 A JP 2012140438A JP 2012140438 A JP2012140438 A JP 2012140438A JP 2013033944 A JP2013033944 A JP 2013033944A
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Classifications
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Abstract
【解決手段】駆動回路中の半導体素子と電気的に接続して、駆動回路中に保護回路を設け、駆動回路中の半導体素子となるトランジスタと駆動回路中の保護回路を形成するトランジスタを同時に形成することにより、駆動回路の作製中にESDにより半導体素子が破壊されることを抑制する。さらに、駆動回路中の保護回路を形成するトランジスタに酸化物半導体膜を用いることにより、保護回路のリーク電流を低減する。
【選択図】図1
Description
本実施の形態では、開示する発明の一態様に係る駆動回路および当該駆動回路に用いることができる保護回路の構成及び動作方法について図1乃至図4を用いて説明する。
本実施の形態においては、実施の形態1に示す駆動回路の作製方法について、図8および図9を用いて説明する。例として図8に示す、トランジスタ440およびトランジスタ450を同時に作製する方法について説明する。ここで、トランジスタ440は、先の実施の形態に示す第1の保護回路104を形成するトランジスタ114に対応し、トランジスタ450は、半導体素子101として機能するトランジスタ111に対応する。なお、本実施の形態では、直接図示しないが、先の実施の形態に示す第2の保護回路105を形成するトランジスタ115もトランジスタ440と同様の方法で形成することができる。また、図3に示すように駆動回路部と表示部を同一基板上に作製する場合、表示部のトランジスタも同様の方法で作製することができる。
本実施の形態においては、実施の形態2に示すトランジスタとは、異なる形状のトランジスタからなる駆動回路を作製する方法について、図10を用いて説明する。例として図10に示す、トランジスタ460およびトランジスタ470を同時に作製する方法について示す。ここで、トランジスタ460は、先の実施の形態に示すトランジスタ440、つまり第1の保護回路104を形成するトランジスタ114に対応し、トランジスタ470は、トランジスタ450、つまり半導体素子101として機能するトランジスタ111に対応する。なお、本実施の形態においても、直接図示しないが、先の実施の形態に示す第2の保護回路105を形成するトランジスタ115もトランジスタ460と同様の方法で形成することができる。また、図3に示すように駆動回路部と表示部を同一基板上に作製する場合、表示部のトランジスタも同様の方法で作製することができる。
先の実施の形態に示したトランジスタおよび当該トランジスタを用いた駆動回路を用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成する場合、当該駆動回路に用いたトランジスタと同時に表示部のトランジスタを形成することもできる。
本明細書に開示する駆動回路は、さまざまな電子機器(遊技機も含む)の表示装置として適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した駆動回路を具備する表示装置を有する電子機器の例について説明する。
11 配線
12 配線
13 配線
14 配線
15 配線
16 配線
17 配線
21 入力端子
22 入力端子
23 入力端子
24 入力端子
25 入力端子
26 出力端子
27 出力端子
31 トランジスタ
32 トランジスタ
33 トランジスタ
34 トランジスタ
35 トランジスタ
36 トランジスタ
37 トランジスタ
38 トランジスタ
39 トランジスタ
40 トランジスタ
41 トランジスタ
51 電源線
53 電源線
61 期間
62 期間
101 半導体素子
102 配線
103 配線
104 第1の保護回路
105 第2の保護回路
111 トランジスタ
114 トランジスタ
115 トランジスタ
400 基板
401 ゲート電極層
402 ゲート絶縁膜
403 酸化物半導体膜
409 チャネル形成領域
411 ゲート電極層
412 ゲート絶縁膜
413 酸化物半導体膜
419 チャネル形成領域
420 絶縁膜
421 ドーパント
422 ゲート絶縁膜
423 ドーパント
424 金属元素を含む膜
425 絶縁膜
426 絶縁膜
429 絶縁膜
431 絶縁膜
440 トランジスタ
450 トランジスタ
460 トランジスタ
470 トランジスタ
480 トランジスタ
481 トランジスタ
490 トランジスタ
491 トランジスタ
104a 第1の保護回路
104b 第1の保護回路
104c 第1の保護回路
104d 第1の保護回路
104e 第1の保護回路
104f 第1の保護回路
104g 第1の保護回路
104h 第1の保護回路
105a 第2の保護回路
105b 第2の保護回路
105c 第2の保護回路
105d 第2の保護回路
105e 第2の保護回路
105f 第2の保護回路
105g 第2の保護回路
105h 第2の保護回路
114a トランジスタ
114b トランジスタ
115a トランジスタ
115b トランジスタ
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部
3056 バッテリー
3057 表示部
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁膜
4021 絶縁膜
4023 絶縁膜
4030 電極層
4031 電極層
4032 絶縁膜
404a ソース領域
404b ドレイン領域
405a ソース電極層
405b ドレイン電極層
414a ソース領域
414b ドレイン領域
415a ソース電極層
415b ドレイン電極層
415c 配線層
424a 電極層
424b 電極層
424c 電極層
424d 電極層
429a サイドウォール絶縁膜
429b サイドウォール絶縁膜
431a サイドウォール絶縁膜
431b サイドウォール絶縁膜
434a 低濃度不純物領域
434b 低濃度不純物領域
444a 低濃度不純物領域
444b 低濃度不純物領域
4510 隔壁
4511 電界発光層
4513 発光素子
4514 充填材
5300 基板
5301 画素部
5302 走査線駆動回路
5303 走査線駆動回路
5304 信号線駆動回路
5305 タイミング制御回路
5601 シフトレジスタ
5602 スイッチング回路
5603 薄膜トランジスタ
5604 配線
5605 配線
9601 筐体
9603 表示部
9605 スタンド
Claims (16)
- 保護回路と、半導体素子と、を含み、
前記保護回路は、酸化物半導体膜が設けられたトランジスタを有し、
当該トランジスタは、
前記半導体素子の端子の一とソース電極層またはドレイン電極層の一方が電気的に接続され、
ゲート電極層とソース電極層またはドレイン電極層のいずれかとが電気的に接続され、
前記酸化物半導体膜は、
前記ゲート電極層と重畳する領域にチャネル形成領域を有し、
当該チャネル形成領域を挟んで、前記チャネル形成領域より抵抗が低く、金属元素を含む、ソース領域およびドレイン領域を有する駆動回路。 - 高電位電源線と、低電位電源線と、第1の保護回路と、第2の保護回路と、半導体素子と、を含み、
前記第1の保護回路は、第1の酸化物半導体膜が設けられた第1のトランジスタを有し、
当該第1のトランジスタは、
前記半導体素子の端子の一と第1のソース電極層または第1のドレイン電極層の一方が電気的に接続され、
高電位電源線と第1のソース電極層または第1のドレイン電極層の他方が電気的に接続され、
前記半導体素子の端子の一の電位が前記高電位電源線の電位より高い場合に順方向バイアスとなるように、第1のゲート電極層と第1のソース電極層または第1のドレイン電極層のいずれかとが電気的に接続され、
前記第2の保護回路は、第2の酸化物半導体膜が設けられた第2のトランジスタを有し、
当該第2のトランジスタは、
前記半導体素子の端子の一と第2のソース電極層または第2のドレイン電極層の一方が電気的に接続され、
低電位電源線と第2のソース電極層または第2のドレイン電極層の他方が電気的に接続され、
前記半導体素子の端子の一の電位が前記低電位電源線の電位より低い場合に順方向バイアスとなるように、第2のゲート電極層と第2のソース電極層または第2のドレイン電極層のいずれかとが電気的に接続される駆動回路。 - 前記第1の保護回路は、互いに直列接続された複数の第1のトランジスタを有し、
前記第2の保護回路は、互いに直列接続された複数の第2のトランジスタを有する請求項2に記載の駆動回路。 - 前記第1の酸化物半導体膜は、
前記第1のゲート電極層と重畳する領域にチャネル形成領域を有し、
当該チャネル形成領域を挟んで、前記チャネル形成領域より抵抗が低く、金属元素を含む、ソース領域およびドレイン領域を有し、
前記第2の酸化物半導体膜は、
前記第2のゲート電極層と重畳する領域にチャネル形成領域を有し、
当該チャネル形成領域を挟んで、前記チャネル形成領域より抵抗が低く、金属元素を含む、ソース領域およびドレイン領域を有する請求項2または3に記載の駆動回路。 - 前記半導体素子は、第3の酸化物半導体膜が設けられた第3のトランジスタである請求項1乃至請求項4のいずれか一に記載の駆動回路。
- 前記第3の酸化物半導体膜は、
前記第3のトランジスタのゲート電極層と重畳する領域にチャネル形成領域を有し、
当該チャネル形成領域を挟んで、前記チャネル形成領域より抵抗が低く、金属元素を含む、ソース領域およびドレイン領域を有する請求項5に記載の駆動回路。 - 請求項1乃至請求項6のいずれか一に記載の駆動回路を有する表示装置。
- 基板上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にゲート絶縁膜及びゲート電極層を積層して形成し、
前記酸化物半導体膜、前記ゲート絶縁膜および前記ゲート電極層上に、前記酸化物半導体膜の一部と接するように金属元素を含む膜を、前記基板を加熱しながらスパッタリング法で成膜し、前記酸化物半導体膜の前記ゲート電極層と重畳する領域にチャネル形成領域を形成し、前記酸化物半導体膜の当該チャネル形成領域を挟む領域に、前記チャネル形成領域より抵抗が低く、前記金属元素を含む、ソース領域およびドレイン領域を形成し、
前記金属元素を含む膜を、ウェットエッチングを用いて除去し、
前記酸化物半導体膜、前記ゲート絶縁膜および前記ゲート電極層上に絶縁膜を形成し、
前記絶縁膜上にソース電極層およびドレイン電極層を形成し、前記絶縁膜に形成した開口を介して、前記ソース領域および前記ドレイン領域と電気的に接続し、
前記ソース電極層または前記ドレイン電極層の一方は、同一基板上に形成された半導体素子の端子の一と電気的に接続し、
前記ソース電極層または前記ドレイン電極層の他方は、同一基板上に形成された配線と電気的に接続し、
前記ゲート電極層と、前記ソース電極層または前記ドレイン電極層のいずれかが電気的に接続するトランジスタを形成し、保護回路として用いる駆動回路の作製方法。 - 前記金属元素を含む膜の成膜は、アルゴン雰囲気、窒素雰囲気または真空中で行う請求項8に記載の駆動回路の作製方法。
- 基板上に酸化物半導体膜を形成し、
前記酸化物半導体膜上にゲート絶縁膜及びゲート電極層を積層して形成し、
前記酸化物半導体膜、前記ゲート絶縁膜および前記ゲート電極層上に、前記酸化物半導体膜の一部と接するように金属元素を含む膜をスパッタリング法で成膜し、
前記酸化物半導体膜および前記金属元素を含む膜を加熱して前記金属元素を含む膜から前記金属元素を前記酸化物半導体膜に導入し、前記酸化物半導体膜の前記ゲート電極層と重畳する領域にチャネル形成領域を形成し、前記酸化物半導体膜の当該チャネル形成領域を挟む領域に、前記チャネル形成領域より抵抗が低く、前記金属元素を含む、ソース領域およびドレイン領域を形成し、
前記金属元素を含む膜を、ウェットエッチングを用いて除去し、
前記酸化物半導体膜、前記ゲート絶縁膜および前記ゲート電極層上に絶縁膜を形成し、
前記絶縁膜上にソース電極層およびドレイン電極層を形成し、前記絶縁膜に形成した開口を介して、前記ソース領域および前記ドレイン領域と電気的に接続し、
前記ソース電極層または前記ドレイン電極層の一方は、同一基板上に形成された半導体素子の端子の一と電気的に接続し、
前記ソース電極層または前記ドレイン電極層の他方は、同一基板上に形成された配線と電気的に接続し、
前記ゲート電極層と、前記ソース電極層または前記ドレイン電極層のいずれかが電気的に接続するトランジスタを形成し、保護回路として用いる駆動回路の作製方法。 - 前記酸化物半導体膜および前記金属元素を含む膜の加熱は、アルゴン雰囲気、窒素雰囲気または真空中で行う請求項10に記載の駆動回路の作製方法。
- 前記金属元素を含む膜を成膜してから、当該金属元素を含む膜を除去するまでの間に、前記ゲート絶縁膜及び前記ゲート電極層をマスクとして、前記酸化物半導体膜に前記金属元素を含む膜を通過してドーパントを選択的に導入し、前記酸化物半導体膜の前記チャネル形成領域を挟む領域に、前記チャネル形成領域より抵抗が低く、前記金属元素および前記ドーパントを含む、ソース領域およびドレイン領域を形成する請求項8乃至11のいずれか一に記載の駆動回路の作製方法。
- 前記ドーパントとしてリンまたはホウ素のいずれかを用いる請求項12に記載の駆動回路の作製方法。
- 前記半導体素子は、酸化物半導体が設けられた第2のトランジスタであり、
前記第2のトランジスタは、前記トランジスタと並行して作製する請求項8乃至13のいずれか一に記載の駆動回路の作製方法。 - 前記金属元素を含む膜のウェットエッチングにおいて、前記金属元素を含む膜が前記ゲート電極層に対して高いエッチング選択比を取る請求項8乃至14のいずれか一に記載の駆動回路の作製方法。
- 前記金属元素としてアルミニウムまたはマグネシウムのいずれかを用いる請求項8乃至15のいずれか一に記載の駆動回路の作製方法。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019068081A (ja) * | 2014-02-07 | 2019-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019096899A (ja) * | 2014-02-07 | 2019-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019184938A (ja) * | 2018-04-16 | 2019-10-24 | シャープ株式会社 | アクティブマトリクス基板、表示装置およびアクティブマトリクス基板の欠陥修正方法 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8673426B2 (en) * | 2011-06-29 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit |
US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
JP2014027263A (ja) * | 2012-06-15 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR102085367B1 (ko) | 2013-05-27 | 2020-03-06 | 삼성디스플레이 주식회사 | 게이트 구동부 및 그것을 포함하는 표시 장치 |
US9276128B2 (en) | 2013-10-22 | 2016-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, and etchant used for the same |
US9780226B2 (en) * | 2014-04-25 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
FR3025921A1 (fr) * | 2014-09-15 | 2016-03-18 | St Microelectronics Int Nv | Procede de determination d'une frequence de rafraichissement d'une matrice de pixels actifs oled, et dispositif correspondant |
US10460984B2 (en) | 2015-04-15 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating electrode and semiconductor device |
CN106847183B (zh) * | 2015-12-03 | 2020-04-24 | 群创光电股份有限公司 | 具有混合晶体管的主动矩阵有机发光二极管的驱动电路 |
CN105609138A (zh) * | 2016-01-04 | 2016-05-25 | 京东方科技集团股份有限公司 | 一种移位寄存器、栅极驱动电路、显示面板及显示装置 |
BR112018015422A2 (ja) * | 2016-02-01 | 2018-12-18 | Ricoh Company, Ltd | An electric field effect type transistor, a manufacturing method for the same, a display element, a display, a system |
CN105468204B (zh) * | 2016-02-04 | 2018-07-17 | 京东方科技集团股份有限公司 | 一种显示模组、显示装置 |
JP2017224676A (ja) * | 2016-06-14 | 2017-12-21 | 株式会社ジャパンディスプレイ | 半導体装置及び表示装置 |
CN107293493A (zh) * | 2017-06-06 | 2017-10-24 | 武汉华星光电技术有限公司 | 铟镓锌氧化物薄膜晶体管的制作方法 |
CN107611952B (zh) * | 2017-09-14 | 2019-04-05 | 惠科股份有限公司 | 静电放电防护电路及其应用的显示装置 |
JP7018786B2 (ja) * | 2018-02-27 | 2022-02-14 | デクセリアルズ株式会社 | 保護回路、光発電システム |
KR20200145870A (ko) | 2019-06-10 | 2020-12-31 | 삼성전자주식회사 | 반도체 장치 |
KR102675926B1 (ko) * | 2020-06-30 | 2024-06-17 | 엘지디스플레이 주식회사 | 표시장치 |
KR20220037659A (ko) * | 2020-09-18 | 2022-03-25 | 엘지디스플레이 주식회사 | 게이트 드라이버를 갖는 디스플레이 장치 |
CN112530937B (zh) * | 2020-12-02 | 2022-09-27 | Tcl华星光电技术有限公司 | 一种静电保护电路和显示面板 |
KR20220134324A (ko) | 2021-03-26 | 2022-10-05 | 삼성전자주식회사 | 이미지 센서 |
KR20230001600A (ko) * | 2021-06-28 | 2023-01-05 | 삼성디스플레이 주식회사 | 트랜지스터 및 이를 포함하는 표시 장치 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093974A (ja) * | 2003-09-18 | 2005-04-07 | Ind Technol Res Inst | 薄膜トランジスタ素子活性層の半導体材料とその製造方法 |
JP2007220816A (ja) * | 2006-02-15 | 2007-08-30 | Kochi Prefecture Sangyo Shinko Center | 薄膜トランジスタ及びその製法 |
JP2008040343A (ja) * | 2006-08-09 | 2008-02-21 | Nec Corp | 薄膜トランジスタアレイ、その製造方法及び液晶表示装置 |
JP2009528670A (ja) * | 2006-06-02 | 2009-08-06 | 財団法人高知県産業振興センター | 半導体機器及びその製法 |
JP2009246362A (ja) * | 2008-03-28 | 2009-10-22 | Samsung Electronics Co Ltd | インバータ及びそれを含む論理回路 |
JP2010050434A (ja) * | 2008-08-21 | 2010-03-04 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2010056539A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2011100995A (ja) * | 2009-10-09 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2011124557A (ja) * | 2009-11-13 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2011124360A (ja) * | 2009-12-10 | 2011-06-23 | Fujifilm Corp | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
JP2011124532A (ja) * | 2009-12-11 | 2011-06-23 | Korea Electronics Telecommun | 薄膜トランジスタ及びその製造方法 |
US20110147738A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Family Cites Families (162)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH06332011A (ja) * | 1993-05-18 | 1994-12-02 | Sony Corp | 半導体集合基板及び半導体装置 |
JPH0830799B2 (ja) | 1994-04-26 | 1996-03-27 | セイコーエプソン株式会社 | 液晶表示装置 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3409542B2 (ja) * | 1995-11-21 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JPH10198292A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP3116916B2 (ja) | 1998-08-17 | 2000-12-11 | 日本電気株式会社 | 回路装置、その製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP3652898B2 (ja) * | 1998-11-19 | 2005-05-25 | 株式会社日立製作所 | 液晶表示装置 |
DE60034406T2 (de) * | 1999-03-30 | 2008-01-31 | Seiko Epson Corp. | Verfahren zur herstellung von einem dünnschichtfeldeffekttransistor |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
US7019809B2 (en) * | 2001-06-29 | 2006-03-28 | Citizen Watch Co., Ltd | Liquid crystal display panel having an insulating member to protect lead electrodes |
KR100386849B1 (ko) * | 2001-07-10 | 2003-06-09 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 표시장치의 정전방전 방지회로 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP5072157B2 (ja) * | 2001-09-27 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP3714243B2 (ja) * | 2001-12-11 | 2005-11-09 | セイコーエプソン株式会社 | 半導体装置、電気光学装置、および電子機器 |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP4574158B2 (ja) * | 2003-10-28 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体表示装置及びその作製方法 |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
KR101019337B1 (ko) | 2004-03-12 | 2011-03-07 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006060191A (ja) * | 2004-07-23 | 2006-03-02 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法、電気光学装置、電子機器 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
JP5138163B2 (ja) * | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
CA2585063C (en) | 2004-11-10 | 2013-01-15 | Canon Kabushiki Kaisha | Light-emitting device |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
CA2585071A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
EP1770788A3 (en) * | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101577231B (zh) | 2005-11-15 | 2013-01-02 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) * | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
JP2007220818A (ja) * | 2006-02-15 | 2007-08-30 | Kochi Prefecture Sangyo Shinko Center | 薄膜トランジスタ及びその製法 |
JP5015471B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
KR100847640B1 (ko) * | 2006-05-23 | 2008-07-21 | 가시오게산키 가부시키가이샤 | 표시장치 |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
JP5216204B2 (ja) * | 2006-10-31 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置及びその作製方法 |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR100993420B1 (ko) * | 2006-12-29 | 2010-11-09 | 엘지디스플레이 주식회사 | 액정표시장치 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
KR20080095538A (ko) * | 2007-04-25 | 2008-10-29 | 엘지전자 주식회사 | 박막 트랜지스터 및 그 제조방법, 이를 포함하는평판표시장치 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR20080101654A (ko) * | 2007-05-18 | 2008-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5268132B2 (ja) * | 2007-10-30 | 2013-08-21 | 富士フイルム株式会社 | 酸化物半導体素子とその製造方法、薄膜センサおよび電気光学装置 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
JP2009147192A (ja) * | 2007-12-17 | 2009-07-02 | Fujifilm Corp | 結晶性無機膜とその製造方法、半導体装置 |
US20100295042A1 (en) | 2008-01-23 | 2010-11-25 | Idemitsu Kosan Co., Ltd. | Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device |
JP5503895B2 (ja) * | 2008-04-25 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101496148B1 (ko) * | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
TWI622175B (zh) * | 2008-07-31 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP5322530B2 (ja) * | 2008-08-01 | 2013-10-23 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタの製造方法及び該製造方法によって製造された薄膜電界効果型トランジスタ |
JP5480554B2 (ja) * | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI637444B (zh) * | 2008-08-08 | 2018-10-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
TWI500160B (zh) * | 2008-08-08 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
WO2010032603A1 (en) * | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and wireless tag using the same |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
US8492756B2 (en) * | 2009-01-23 | 2013-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8174021B2 (en) * | 2009-02-06 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
JP4857353B2 (ja) * | 2009-03-02 | 2012-01-18 | 株式会社日立製作所 | 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置 |
JP5504008B2 (ja) * | 2009-03-06 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8872751B2 (en) * | 2009-03-26 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having interconnected transistors and electronic device including the same |
KR101810699B1 (ko) * | 2009-06-30 | 2018-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
KR101476817B1 (ko) * | 2009-07-03 | 2014-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터를 갖는 표시 장치 및 그 제작 방법 |
KR101791370B1 (ko) * | 2009-07-10 | 2017-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102153841B1 (ko) * | 2009-07-31 | 2020-09-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101065407B1 (ko) * | 2009-08-25 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101801538B1 (ko) * | 2009-10-16 | 2017-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리 회로 및 반도체 장치 |
KR102162746B1 (ko) * | 2009-10-21 | 2020-10-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 아날로그 회로 및 반도체 장치 |
TWI419324B (zh) * | 2009-11-27 | 2013-12-11 | Univ Nat Chiao Tung | 具有三五族通道及四族源汲極之半導體裝置及其製造方法 |
WO2011145794A1 (ko) * | 2010-05-18 | 2011-11-24 | 서울반도체 주식회사 | 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법 |
JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP6005401B2 (ja) * | 2011-06-10 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8673426B2 (en) * | 2011-06-29 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit |
US8698137B2 (en) * | 2011-09-14 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101923190B1 (ko) * | 2012-02-17 | 2018-11-30 | 삼성디스플레이 주식회사 | 정전기 보호 회로를 구비한 표시장치 및 그의 제조방법 |
US9324449B2 (en) * | 2012-03-28 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device |
US9166054B2 (en) * | 2012-04-13 | 2015-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN102956649A (zh) * | 2012-11-26 | 2013-03-06 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板制作方法及显示装置 |
JP6585354B2 (ja) * | 2014-03-07 | 2019-10-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6364891B2 (ja) * | 2014-04-01 | 2018-08-01 | セイコーエプソン株式会社 | 電気光学装置、電子機器および半導体装置 |
WO2016067591A1 (ja) * | 2014-10-28 | 2016-05-06 | 凸版印刷株式会社 | 薄膜トランジスタアレイおよびその製造方法 |
JP2017103408A (ja) * | 2015-12-04 | 2017-06-08 | 株式会社ジャパンディスプレイ | 表示装置 |
CN114361180A (zh) * | 2015-12-28 | 2022-04-15 | 株式会社半导体能源研究所 | 半导体装置、包括该半导体装置的显示装置 |
JP6726973B2 (ja) * | 2016-02-01 | 2020-07-22 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102375685B1 (ko) * | 2016-02-02 | 2022-03-18 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
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Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093974A (ja) * | 2003-09-18 | 2005-04-07 | Ind Technol Res Inst | 薄膜トランジスタ素子活性層の半導体材料とその製造方法 |
JP2007220816A (ja) * | 2006-02-15 | 2007-08-30 | Kochi Prefecture Sangyo Shinko Center | 薄膜トランジスタ及びその製法 |
JP2009528670A (ja) * | 2006-06-02 | 2009-08-06 | 財団法人高知県産業振興センター | 半導体機器及びその製法 |
JP2008040343A (ja) * | 2006-08-09 | 2008-02-21 | Nec Corp | 薄膜トランジスタアレイ、その製造方法及び液晶表示装置 |
JP2009246362A (ja) * | 2008-03-28 | 2009-10-22 | Samsung Electronics Co Ltd | インバータ及びそれを含む論理回路 |
JP2010056539A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2010050434A (ja) * | 2008-08-21 | 2010-03-04 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2011100995A (ja) * | 2009-10-09 | 2011-05-19 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2011124557A (ja) * | 2009-11-13 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2011124360A (ja) * | 2009-12-10 | 2011-06-23 | Fujifilm Corp | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
JP2011124532A (ja) * | 2009-12-11 | 2011-06-23 | Korea Electronics Telecommun | 薄膜トランジスタ及びその製造方法 |
US20110147738A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019068081A (ja) * | 2014-02-07 | 2019-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019096899A (ja) * | 2014-02-07 | 2019-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10367013B2 (en) | 2014-02-07 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10763282B2 (en) | 2014-02-07 | 2020-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2021100121A (ja) * | 2014-02-07 | 2021-07-01 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11355529B2 (en) | 2014-02-07 | 2022-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP7118188B2 (ja) | 2014-02-07 | 2022-08-15 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP7494274B2 (ja) | 2014-02-07 | 2024-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019184938A (ja) * | 2018-04-16 | 2019-10-24 | シャープ株式会社 | アクティブマトリクス基板、表示装置およびアクティブマトリクス基板の欠陥修正方法 |
US10854639B2 (en) | 2018-04-16 | 2020-12-01 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and method for repairing defect of active matrix substrate |
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