JP2012518084A5 - - Google Patents
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- Publication number
- JP2012518084A5 JP2012518084A5 JP2011549685A JP2011549685A JP2012518084A5 JP 2012518084 A5 JP2012518084 A5 JP 2012518084A5 JP 2011549685 A JP2011549685 A JP 2011549685A JP 2011549685 A JP2011549685 A JP 2011549685A JP 2012518084 A5 JP2012518084 A5 JP 2012518084A5
- Authority
- JP
- Japan
- Prior art keywords
- copper
- ions
- pulse
- current pulse
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 15
- 229910052802 copper Inorganic materials 0.000 claims 15
- 239000010949 copper Substances 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000010953 base metal Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 4
- 229910001431 copper ion Inorganic materials 0.000 claims 4
- 239000002659 electrodeposit Substances 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910001448 ferrous ion Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 claims 1
- 238000004070 electrodeposition Methods 0.000 claims 1
- 238000007772 electroless plating Methods 0.000 claims 1
- 229910001447 ferric ion Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- -1 iron ions Chemical class 0.000 claims 1
- SURQXAFEQWPFPV-UHFFFAOYSA-L iron(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O SURQXAFEQWPFPV-UHFFFAOYSA-L 0.000 claims 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 claims 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 claims 1
- 150000002898 organic sulfur compounds Chemical class 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005289 physical deposition Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 150000003585 thioureas Chemical class 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/372,113 | 2009-02-17 | ||
| US12/372,113 US20100206737A1 (en) | 2009-02-17 | 2009-02-17 | Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) |
| PCT/IB2009/007793 WO2010094998A1 (en) | 2009-02-17 | 2009-12-16 | Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012518084A JP2012518084A (ja) | 2012-08-09 |
| JP2012518084A5 true JP2012518084A5 (enExample) | 2013-01-31 |
| JP5743907B2 JP5743907B2 (ja) | 2015-07-01 |
Family
ID=42126356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011549685A Expired - Fee Related JP5743907B2 (ja) | 2009-02-17 | 2009-12-16 | スルーシリコンビア（ｔｓｖ）内にチップ−チップ間、チップ−ウェハー間及びウェハー−ウェハー間の銅インターコネクトを電着するプロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100206737A1 (enExample) |
| EP (1) | EP2399281B1 (enExample) |
| JP (1) | JP5743907B2 (enExample) |
| CN (1) | CN102318041B (enExample) |
| TW (1) | TW201034120A (enExample) |
| WO (1) | WO2010094998A1 (enExample) |
Families Citing this family (63)
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| US7816181B1 (en) * | 2009-06-30 | 2010-10-19 | Sandisk Corporation | Method of under-filling semiconductor die in a die stack and semiconductor device formed thereby |
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| US20120024713A1 (en) * | 2010-07-29 | 2012-02-02 | Preisser Robert F | Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) with heated substrate and cooled electrolyte |
| US20120056331A1 (en) * | 2010-09-06 | 2012-03-08 | Electronics And Telecommunications Research Institute | Methods of forming semiconductor device and semiconductor devices formed by the same |
| US8786066B2 (en) * | 2010-09-24 | 2014-07-22 | Intel Corporation | Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same |
| JP5981455B2 (ja) * | 2011-01-26 | 2016-08-31 | エンソン インコーポレイテッド | マイクロ電子工業におけるビアホール充填方法 |
| US8970043B2 (en) | 2011-02-01 | 2015-03-03 | Maxim Integrated Products, Inc. | Bonded stacked wafers and methods of electroplating bonded stacked wafers |
| JP5754209B2 (ja) * | 2011-03-31 | 2015-07-29 | 大日本印刷株式会社 | 半導体装置の製造方法 |
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| EP2518187A1 (en) * | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Aqueous acidic bath for electrolytic deposition of copper |
| US8691691B2 (en) | 2011-07-29 | 2014-04-08 | International Business Machines Corporation | TSV pillar as an interconnecting structure |
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| WO2014012381A1 (zh) * | 2012-07-17 | 2014-01-23 | 上海交通大学 | 铜互连微柱力学性能原位压缩试样及其制备方法 |
| CN103715132B (zh) * | 2012-09-29 | 2017-12-01 | 中芯国际集成电路制造(上海)有限公司 | 金属互连结构的形成方法 |
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| KR20140094061A (ko) * | 2013-01-16 | 2014-07-30 | 주식회사 잉크테크 | 연속 도금 장치 및 연속 도금 방법 |
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| US9470710B2 (en) * | 2013-02-27 | 2016-10-18 | Texas Instruments Incorporated | Capacitive MEMS sensor devices |
| CN103280427B (zh) * | 2013-06-13 | 2016-08-10 | 华进半导体封装先导技术研发中心有限公司 | 一种tsv正面端部互连工艺 |
| CN103290438B (zh) * | 2013-06-25 | 2015-12-02 | 深圳市创智成功科技有限公司 | 用于晶圆级封装的电镀铜溶液及电镀方法 |
| KR101750795B1 (ko) * | 2013-06-27 | 2017-06-26 | 인텔 아이피 코포레이션 | 전자 시스템을 위한 고 전도성 고 주파수 비아 |
| CN103361681B (zh) * | 2013-08-08 | 2016-11-16 | 上海新阳半导体材料股份有限公司 | 能改变tsv微孔镀铜填充方式的添加剂c及包含其的电镀液 |
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| CN103668356B (zh) * | 2013-12-17 | 2016-04-13 | 上海交通大学 | 在铜互连硫酸铜镀液中添加Fe2+和Fe3+的电镀方法 |
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| US20170145577A1 (en) * | 2015-11-19 | 2017-05-25 | Rohm And Haas Electronic Materials Llc | Method of electroplating low internal stress copper deposits on thin film substrates to inhibit warping |
| FR3046878B1 (fr) * | 2016-01-19 | 2018-05-18 | Kobus Sas | Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat |
| CN107706146B (zh) * | 2016-08-08 | 2020-07-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制备方法 |
| CN106757191B (zh) * | 2016-11-23 | 2019-10-01 | 苏州昕皓新材料科技有限公司 | 一种具有高择优取向的铜晶体颗粒及其制备方法 |
| US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
| US10475808B2 (en) | 2017-08-30 | 2019-11-12 | Macronix International Co., Ltd. | Three dimensional memory device and method for fabricating the same |
| CN108615704B (zh) * | 2018-03-27 | 2020-05-08 | 中国科学院上海微系统与信息技术研究所 | 一种硅通孔互连的制作工艺、由此形成的硅通孔互连结构及其应用 |
| CN108754555B (zh) * | 2018-08-29 | 2020-04-28 | 广东天承科技有限公司 | 一种电镀液及其电镀方法 |
| US10867855B2 (en) | 2019-05-13 | 2020-12-15 | Honeywell International Inc. | Through silicon via fabrication |
| KR102875198B1 (ko) | 2019-08-19 | 2025-10-22 | 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 | 구리로 충전된 마이크로비아들을 포함하는 고밀도 상호연결 인쇄 회로 기판을 제조하는 방법 |
| CN114342569A (zh) | 2019-08-19 | 2022-04-12 | 德国艾托特克有限两合公司 | 高密度互连印刷电路板的制造顺序及高密度互连印刷电路板 |
| CN110453255B (zh) * | 2019-08-30 | 2020-10-09 | 广州皓悦新材料科技有限公司 | 一种具有高深镀能力的vcp镀铜光亮剂及其制备方法 |
| CN111041535A (zh) * | 2019-12-25 | 2020-04-21 | 浙江振有电子股份有限公司 | 一种连续移动式电镀通孔双面板的方法 |
| CN111155152B (zh) * | 2019-12-26 | 2022-11-01 | 西安泰金工业电化学技术有限公司 | 一种用于pcb水平电镀工序中降低生产成本的方法 |
| TWI741466B (zh) | 2019-12-27 | 2021-10-01 | 鉑識科技股份有限公司 | 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法 |
| CN112018078B (zh) * | 2020-07-29 | 2022-10-25 | 复旦大学 | 一种铜互连结构及其制作方法 |
| CN112151504B (zh) * | 2020-08-17 | 2022-04-29 | 复旦大学 | 一种带有封孔层的铜互连结构及其制备方法 |
| CN113174620B (zh) * | 2021-04-22 | 2022-05-03 | 浙江集迈科微电子有限公司 | 一种镀液流速加强型tsv金属柱的电镀方法 |
| CN115573009A (zh) * | 2022-10-17 | 2023-01-06 | 苏州苏纳光电有限公司 | 高深宽比tsv结构、其制备方法与应用 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE4344387C2 (de) * | 1993-12-24 | 1996-09-05 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupfer und Anordnung zur Durchführung des Verfahrens |
| DE19545231A1 (de) * | 1995-11-21 | 1997-05-22 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Metallschichten |
| DE19653681C2 (de) * | 1996-12-13 | 2000-04-06 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens |
| ATE282248T1 (de) * | 1999-01-21 | 2004-11-15 | Atotech Deutschland Gmbh | Verfahren zum galvanischen bilden von leiterstrukturen aus hochreinem kupfer bei der herstellung von integrierten schaltungen |
| US20040045832A1 (en) * | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| JP2001267726A (ja) * | 2000-03-22 | 2001-09-28 | Toyota Autom Loom Works Ltd | 配線基板の電解メッキ方法及び配線基板の電解メッキ装置 |
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| DE10311575B4 (de) * | 2003-03-10 | 2007-03-22 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis |
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| ATE484943T1 (de) * | 2006-03-30 | 2010-10-15 | Atotech Deutschland Gmbh | Elektrolytisches verfahren zum füllen von löchern und vertiefungen mit metallen |
| KR100945504B1 (ko) * | 2007-06-26 | 2010-03-09 | 주식회사 하이닉스반도체 | 스택 패키지 및 그의 제조 방법 |
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| US7825517B2 (en) * | 2007-07-16 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for packaging semiconductor dies having through-silicon vias |
| KR101185886B1 (ko) * | 2007-07-23 | 2012-09-25 | 삼성전자주식회사 | 유니버설 배선 라인들을 포함하는 반도체 칩, 반도체패키지, 카드 및 시스템 |
| TWI335059B (en) * | 2007-07-31 | 2010-12-21 | Siliconware Precision Industries Co Ltd | Multi-chip stack structure having silicon channel and method for fabricating the same |
| US7902069B2 (en) * | 2007-08-02 | 2011-03-08 | International Business Machines Corporation | Small area, robust silicon via structure and process |
| TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
| US7776741B2 (en) * | 2008-08-18 | 2010-08-17 | Novellus Systems, Inc. | Process for through silicon via filing |
-
2009
- 2009-02-17 US US12/372,113 patent/US20100206737A1/en not_active Abandoned
- 2009-12-16 JP JP2011549685A patent/JP5743907B2/ja not_active Expired - Fee Related
- 2009-12-16 CN CN200980156992.4A patent/CN102318041B/zh not_active Expired - Fee Related
- 2009-12-16 EP EP09799392.7A patent/EP2399281B1/en not_active Not-in-force
- 2009-12-16 WO PCT/IB2009/007793 patent/WO2010094998A1/en not_active Ceased
- 2009-12-22 TW TW098144125A patent/TW201034120A/zh unknown
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