JP2012212880A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2012212880A JP2012212880A JP2012063019A JP2012063019A JP2012212880A JP 2012212880 A JP2012212880 A JP 2012212880A JP 2012063019 A JP2012063019 A JP 2012063019A JP 2012063019 A JP2012063019 A JP 2012063019A JP 2012212880 A JP2012212880 A JP 2012212880A
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- oxide semiconductor
- semiconductor film
- film
- rare gas
- oxide
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Abstract
【解決手段】酸化物半導体膜を含むトランジスタの作製工程において、少なくとも酸化物半導体膜中に希ガスイオンを注入する注入工程を行い、減圧下、窒素雰囲気下、又は希ガス雰囲気下において、希ガスイオンを注入した酸化物半導体膜に加熱工程を行って希ガスイオンを注入した酸化物半導体膜中に含まれる水素若しくは水を放出させ、酸化物半導体膜を高純度化する。
【選択図】図1
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
本実施の形態では、半導体装置の他の一形態を図2を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態では、半導体装置の他の一形態を、図4を用いて説明する。本実施の形態では、半導体装置の一例としてトランジスタを示す。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
本実施の形態では、半導体装置の作製方法の他の一形態を説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
実施の形態1乃至4のいずれかで一例を示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
実施の形態1乃至4のいずれかで一例を示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
実施の形態1乃至4のいずれかで一例を示したトランジスタは、複数のトランジスタを積層する集積回路を有する半導体装置に好適に用いることができる。本実施の形態では、半導体装置の一例として、記憶媒体(メモリ素子)の例を示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した半導体装置を具備する電子機器の例について説明する。
Claims (12)
- 酸化物半導体膜を形成し、
少なくとも前記酸化物半導体膜中に希ガスイオンを注入する注入工程を行い、
減圧下、窒素雰囲気下、又は希ガス雰囲気下において、前記希ガスイオンを注入した酸化物半導体膜に加熱工程を行って前記希ガスイオンを注入した酸化物半導体膜中に含まれる水素若しくは水を放出させ、
前記注入工程において、前記酸化物半導体膜における注入された希ガス元素の濃度のピークを1×1019atoms/cm3以上3×1022atoms/cm3以下とすることを特徴とする半導体装置の作製方法。 - 酸化物半導体膜を形成し、
少なくとも前記酸化物半導体膜中に希ガスイオンを注入する注入工程を行い、
減圧下、窒素雰囲気下、又は希ガス雰囲気下において、前記希ガスイオンを注入した酸化物半導体膜に加熱工程を行って前記希ガスイオンを注入した酸化物半導体膜中に含まれる水素若しくは水を放出させ、
前記加熱工程を行った酸化物半導体膜の少なくとも一部と接する絶縁層を形成し、
前記注入工程において、前記酸化物半導体膜における注入された希ガス元素の濃度のピークを1×1019atoms/cm3以上3×1022atoms/cm3以下とすることを特徴とする半導体装置の作製方法。 - 酸化物半導体膜を形成し、
少なくとも前記酸化物半導体膜中に希ガスイオンを注入する注入工程を行い、
減圧下、窒素雰囲気下、又は希ガス雰囲気下において、前記希ガスイオンを注入した酸化物半導体膜に加熱工程を行って前記希ガスイオンを注入した酸化物半導体膜中に含まれる水素若しくは水を放出させ、
前記注入工程において、前記酸化物半導体膜における注入された希ガス元素の濃度のピークを1×1019atoms/cm3以上3×1022atoms/cm3以下とし、
前記加熱工程において、前記酸化物半導体膜は表面を露出した状態とすることを特徴とする半導体装置の作製方法。 - 酸化物半導体膜を形成し、
少なくとも前記酸化物半導体膜中に希ガスイオンを注入する注入工程を行い、
減圧下、窒素雰囲気下、又は希ガス雰囲気下において、前記希ガスイオンを注入した酸化物半導体膜に加熱工程を行って前記希ガスイオンを注入した酸化物半導体膜中に含まれる水素若しくは水を放出させ、
前記加熱工程を行った酸化物半導体膜の少なくとも一部と接する絶縁層を形成し、
前記注入工程において、前記酸化物半導体膜における注入された希ガス元素の濃度のピークを1×1019atoms/cm3以上3×1022atoms/cm3以下とし、
前記加熱工程において、前記酸化物半導体膜は表面を露出した状態とすることを特徴とする半導体装置の作製方法。 - 請求項2又は請求項4において、前記絶縁層として酸化物絶縁層を形成し、前記加熱工程を行った酸化物半導体膜及び前記酸化物絶縁層を少なくとも一部が接した状態で加熱工程を行うことを特徴とする半導体装置の作製方法。
- 請求項1乃至5のいずれか一項において、前記加熱工程を行った酸化物半導体膜に酸素の供給を行うことを特徴とする半導体装置の作製方法。
- 請求項1乃至6のいずれか一項において、前記注入工程は、イオン注入法、イオンドーピング法、又はプラズマイマージョンイオンインプランテーション法を用いて行うことを特徴とする半導体装置の作製方法。
- 請求項1乃至7のいずれか一項において、前記希ガス元素として、少なくともアルゴン、クリプトン、又はキセノンを用いることを特徴とする半導体装置の作製方法。
- 請求項1乃至8のいずれか一項において、前記希ガスイオンを注入した酸化物半導体膜に温度300℃以上700℃以下の加熱工程を行って前記希ガスイオンを注入した酸化物半導体膜中に含まれる水素若しくは水を放出させることを特徴とする半導体装置の作製方法。
- 請求項1乃至9のいずれか一項において、前記希ガスイオンを注入した酸化物半導体膜をトランジスタのチャネル形成領域とすることを特徴とする半導体装置の作製方法。
- 請求項1乃至10のいずれか一項において、前記加熱工程を行った酸化物半導体膜は非晶質であることを特徴とする半導体装置の作製方法。
- 請求項1乃至10のいずれか一項において、前記加熱工程を行った酸化物半導体膜は結晶部を有することを特徴とする半導体装置の作製方法。
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KR20120109374A (ko) | 2012-10-08 |
US20120244658A1 (en) | 2012-09-27 |
JP5770130B2 (ja) | 2015-08-26 |
KR101971289B1 (ko) | 2019-04-22 |
US8859330B2 (en) | 2014-10-14 |
JP6473773B2 (ja) | 2019-02-20 |
JP2017139500A (ja) | 2017-08-10 |
JP2015213181A (ja) | 2015-11-26 |
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