JP2012142615A - 多層電極を有する薄板状セラミック及び製造方法 - Google Patents
多層電極を有する薄板状セラミック及び製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 33
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 25
- 238000005245 sintering Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
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- 238000005240 physical vapour deposition Methods 0.000 description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000005553 drilling Methods 0.000 description 5
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- 150000002500 ions Chemical class 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
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Abstract
【解決手段】多層電極を有する薄層状のセラミック本体を備える装置及びこの装置を製作する方法が開示されている。薄層状のセラミック本体はセラミック材料の層を備え、電導材料の中間層でシルクスクリーンされる一定の層の部分を有している。次の焼結は電導材料層製の多層電極を有する固体のセラミック本体を形成する。装置は前記セラミック本体に部分的に延び、これらの電極の少なくとも1つで交差する電気コネクタをさらに備えている。
【選択図】図1
Description
Claims (23)
- セラミック本体と電極を備えた装置であって、
セラミック本体と、該セラミック本体に埋め込まれた複数の平行に間隔をおいた電極を備えた電極と、
前記セラミック本体の内側に部分的に延びて、交差し、前記複数の平行に間隔をおいた電極の少なくとも1つの電極に機械的及び電気的に接続される電気コネクタとを備えたことを特徴とする装置。 - 前記セラミック本体はセラミックの複数の焼結層を備えている請求項1に記載の装置。
- 前記焼結セラミックは焼結アルミニウム窒化物である請求項2に記載の装置。
- 前記電極は凝固した電導材料の複数の平行に間隔をおいた層を備えている請求項1に記載の装置。
- 前記凝固した電導材料は凝固したタングステン合金である請求項4に記載の装置。
- 前記電気的コネクタは交差し、前記複数の電極の少なくとも2個の電極に機械的及び電気的に相互接続されている請求項1に記載の装置。
- 前記複数の平行に間隔をおいた電極は第1の複数と第2の複数を備え、前記電気コネクタは前記セラミック本体に部分的に延び、前記第1の複数の電極と機械的及び電気的に相互接続し、前記電気コネクタは中間の前記第2の複数の電極にある前記焼結したセラミック層の一部分により前記第2の複数の電極に容量的及び電気的に結合されている請求項1に記載の装置。
- 前記複数の平行に間隔をおいた電極内の最も上の電極は前記電極の少なくとも1つに直接接続され、前記電気コネクタにより交差されると共に接続される請求項1に記載の装置。
- 前記電気コネクタにより交差されると共に接続される前記1つの電極は前記複数の平行に間隔をおいた電極内の最も下の電極であり、該最も下の電極は前記複数の平行に間隔をおいた電極内の最も上の電極に直接接続されている請求項1に記載の装置。
- セラミック本体及び電極を製造する方法であって、
セラミック材料の複数の層を供給し、
セラミック材料の前記複数の層の選択されたものに電導材料の複数の整列され平行に間隔をおいた層を堆積し、
セラミック材料の前記複数の層を焼結し、前記セラミック本体を形成し、前記焼結の間に前記堆積された電導材料の層を凝固することにより該堆積された電導材料の層から複数の平行に間隔をおいた電極を形成し、
前記セラミック本体に部分的及び垂直に延びる穿孔を形成し、
前記穿孔に電導部材を挿入し、
前記電気接続部材を堆積された材料の前記凝固層の少なくとも1つと機械的及び電気的に相互接続することを特徴とする方法。 - 前記堆積ステップは前記複数のセラミック材料の層から選択されたものに電導材料の複数の整列され平行に間隔をおいた層をシルクスクリーンするステップである請求項10に記載の方法。
- 前記堆積ステップは前記複数のセラミック材料の層から選択されたものにチタニウム、チタニウム窒化物、又はタングステン等の金属を含む電導ペーストの複数の整列され平行に間隔をおいた層をシルクスクリーンするステップである請求項10に記載の方法。
- 前記焼結ステップは窒素大気内に約2000℃の複数のアルミ窒化物層を焼結し、前記セラミック本体を形成するステップである請求項10に記載の方法。
- 前記電気接続部材を前記堆積された材料の凝固層の少なくとも1つと機械的及び電気的に相互接続する前記ステップは前記電気接続部材を前記堆積材料の凝固層の少なくとも1つに半田付けするステップである請求項10に記載の方法。
- 前記電気接続部材を前記堆積された材料の凝固層の少なくとも1つに機械的及び電気的に相互接続する前記ステップは前記電気接続部材を前記堆積された材料の凝固層の少なくとも1つに蝋付けするステップである請求項10に記載の方法。
- セラミック本体及び電極を製造する方法であって、
複数のセラミック材料の層を供給し、
前記複数のセラミック材料の層から選択されたものに電導材料の複数の整列され平行に間隔をおいた層を堆積し、
前記複数のセラミック材料の層の少なくとも1つを垂直に通って延び、電導材料の前記複数の層の少なくとも1つと交差する少なくとも1つの穿孔を形成し、 前記穿孔を電導ペーストで充填し、
前記複数のセラミック材料層を焼結し、前記セラミック本体を形成し、前記焼結の間に前記堆積された電導材料の層を凝固することにより前記堆積された電導材料の層から複数の平行に間隔をおいた電極を形成し、前記電導ペーストを前記堆積された電導材料の凝固層の少なくとも1つと機械的及び電気的に相互接続するようになっていることを特徴とする方法。 - 前記堆積ステップはセラミック材料の前記複数の層から選択されたものに電導材料の複数の整列され平行に間隔をおいた層をシルクスクリーンするステップである請求項16に記載の方法。
- 前記電導ペーストはチタニウム、チタニウム窒化物又はタングステンのような金属を含む請求項16に記載の方法。
- 前記焼結ステップは窒素大気内で約2000℃で複数のアルミニウム窒化物層を焼結し、前記セラミック本体を形成するステップである請求項16に記載の方法。
- セラミック本体及び電極を製造する方法であって、
複数のセラミック材料の層と複数の電導材料の層を供給し、
前記複数のセラミック材料の層の少なくとも1つ及び前記電導材料の層の少なくとも1つを通る穿孔を形成し、
前記複数のセラミック材料の層の前記穿孔を前記複数の電導材料の層の前記穿孔と整列させ、
前記複数のセラミック材料の層から選択されたものに電導材料の前記複数の整列され平行に間隔をおいた層を堆積し、
前記穿孔を電導ペーストで充填し、
前記複数のセラミック材料層を焼結し、前記セラミック本体を形成し、前記焼結の間に前記堆積された電導材料の層を凝固することにより前記堆積された電導材料の層から複数の平行に間隔をおいた電極を形成し、前記電導ペーストを前記堆積された電導材料の凝固層の少なくとも1つと機械的及び電気的に相互接続するようになっていることを特徴とする方法。 - 前記堆積ステップはセラミック材料の前記複数の層から選択されたものに電導材料の複数の整列され平行に間隔をおいた層をシルクスクリーンするステップである請求項20に記載の方法。
- 前記電導ペーストはチタニウム、チタニウム窒化物又はタングステンのような金属を含む請求項20に記載の方法。
- 前記焼結ステップは窒素大気内で約2000℃で複数のアルミニウム窒化物層を焼結し、前記セラミック本体を形成するステップである請求項20に記載の方法。
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US09/251697 | 1999-02-17 | ||
US09/251,697 US6303879B1 (en) | 1997-04-01 | 1999-02-17 | Laminated ceramic with multilayer electrodes and method of fabrication |
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JP5475824B2 (ja) | 2014-04-16 |
KR100682172B1 (ko) | 2007-02-12 |
JP5004376B2 (ja) | 2012-08-22 |
JP2001007190A (ja) | 2001-01-12 |
US6303879B1 (en) | 2001-10-16 |
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KR20000062564A (ko) | 2000-10-25 |
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